LED module

Abstract

A light-emitting diode (LED) module includes a carrier unit, at least one LED, a filler layer, and a metal layer. The carrier unit has multiple sets of electrical connections. Each LED is located on the surface of the carrier unit and includes a light-emitting unit, a reflective unit, and an electrode unit. The light-emitting unit has a light-emitting surface and an electrode surface that are opposite to each other. The LED is electrically connected to the corresponding electrical connections via the electrode unit in a flip-chip manner. The filler layer covers the surface of the at least one LED. The metal layer is located on the side of the filler layer away from the carrier unit and forms a gap with the light-emitting surface of the at least one LED. The metal layer has an opening corresponding to the light-emitting unit of each LED, and the width of each opening is not greater than the maximum width of the corresponding light-emitting unit.

Claims

1. A light-emitting diode module, comprising: a carrier unit having multiple sets of electrical connections; at least one light-emitting diode located on the surface of the carrier unit, each light-emitting diode including a light-emitting unit, a reflective unit, and an electrode unit, the light-emitting unit having a light-emitting surface and an electrode surface facing each other, the reflective unit having a first reflective structure formed on the electrode surface, the electrode unit being disposed on the electrode surface and passing through the first reflective structure, and each light-emitting diode being electrically connected to the corresponding electrical connections via the electrode unit in a flip-chip manner; a filler layer made of a light-transmitting insulating material covering the surface of the at least one light-emitting diode; and a metal layer located on the side of the filler layer away from the carrier unit and forming a gap with the light-emitting surface of the at least one light-emitting diode, having an opening corresponding to the light-emitting unit of each light-emitting diode, and the width of each opening not greater than the width of the corresponding light-emitting unit.

2. The light-emitting diode module as described in claim 1, wherein, The metal layer is made of materials selected from aluminum, silver, or chromium-aluminum alloys.

3. The light-emitting diode module as described in claim 1, wherein, The gap between the metal layer and the light-emitting surface of each light-emitting diode is between 1 micrometer and 10 micrometers.

4. The light-emitting diode module as described in claim 1, wherein, The carrier plate unit includes an intermediate plate located on the side of the filler layer opposite to the metal layer. The intermediate plate has a top surface adjacent to the filler layer, a bottom surface opposite to the top surface, and a plurality of through holes that extend from the top surface to the bottom surface and are arranged regularly. Each set of electrical connection portions has an electrical connection post located in the corresponding through hole, an electrical connection piece extending from the electrical connection post to the top surface, and a solder block located on the bottom surface of the intermediate plate and correspondingly connected to each electrical connection post. The electrode unit of the at least one light-emitting diode is respectively connected to two adjacent electrical connection pieces.

5. The light-emitting diode module as described in claim 1, wherein, The carrier board unit includes an intermediate plate located on the side of the filler layer opposite to the metal layer, and a redistribution layer between the filler layer and the intermediate plate. The redistribution layer has a plurality of first electrical connection pads and a plurality of second electrical connection pads located on two opposite sides and exposed to the outside. The intermediate plate has a top surface adjacent to the second electrical connection pads, a bottom surface opposite to the top surface, and a plurality of through holes that extend from the top surface to the bottom surface and are regularly arranged. Each set of electrical connection portions has an electrical connection post located in the corresponding through hole, an electrical connection piece extending from the electrical connection post to the top surface, and a solder block located on the bottom surface of the intermediate plate and correspondingly connected to the electrical connection post. The first electrical connection pads are connected to the electrode unit of the at least one light-emitting diode, and the electrical connection pieces are electrically connected to the second electrical connection pads and then electrically connected to the electrode unit of the at least one light-emitting diode.

6. The light-emitting diode module as claimed in claim 1 further includes a plurality of lenses located above the metal layer and corresponding to each of the light-emitting diodes, wherein the geometric center of each lens is aligned with the geometric center of the corresponding opening.

7. The light-emitting diode module as described in claim 1, wherein, The light-emitting unit also has a side peripheral surface connecting the light-emitting surface and the electrode surface, and the reflective unit also has a second reflective structure formed on the side peripheral surface, and the filling layer covers the surface of the second reflective structure.

8. The light-emitting diode module as described in claim 7, wherein, The first and second reflection structures are Bragg reflection structures.

9. The light-emitting diode module as described in claim 7, wherein, The first reflective structure and the second reflective structure are integrally formed, and have a light-transmitting first insulator, a second insulator, and a metal interlayer located between the first insulator and the second insulator, wherein the metal interlayer is selected from aluminum, gold, or silver.

10. The light-emitting diode module as claimed in claim 1, wherein, The light-emitting unit has an N-type semiconductor layer, a quantum well layer, and a P-type semiconductor layer stacked in sequence. The N-type semiconductor layer has a platform located at the edge and not covered by the quantum well layer and the P-type semiconductor layer. The surface of the N-type semiconductor layer facing away from the quantum well layer is the light-emitting surface. The platform of the N-type semiconductor layer and the surface of the P-type semiconductor layer facing away from the light-emitting surface are the electrode surfaces. The P-type semiconductor layer has a notch corresponding to the platform. The P-type semiconductor layer has a first width parallel to the notch and a second width extending straight from the bottom of the notch and less than the first width. The width of each opening is not less than the second width of the corresponding light-emitting unit and not greater than the first width of the light-emitting unit.

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