High voltage semiconductor device

Abstract

A high-voltage semiconductor device. The high-voltage semiconductor device includes a semiconductor substrate, a first well region disposed in the semiconductor substrate and having a first conductivity type, a first trench-type conductive structure disposed in the first well region and adjacent to the top surface of the semiconductor substrate, an isolation structure disposed in the first well region and surrounding the top of the first trench-type conductive structure, a first wiring doped region disposed in the first well region and adjacent to the isolation structure and having a first conductivity type, a second well region disposed in the first well region and surrounding the middle of the first trench-type conductive structure and having a second conductivity type opposite to the first conductivity type, and a main doped region disposed in the first well region and located below the trench-type conductive structure, and having a second conductivity type. The second well region and the main doped region are separated by the first well region.

Claims

1. A high-voltage semiconductor device, comprising: A semiconductor substrate; A first well region is disposed in the semiconductor substrate and has a first conductivity type; A first trench conductive structure is disposed in the first well region; an isolation structure is disposed in the first well region and surrounds a top of the first trench conductive structure; a first wiring doped region is disposed in the first well region and adjacent to the isolation structure, and has the first conductivity type; a second well region is disposed in the first well region and surrounds a middle portion of the first trench conductive structure, and has a second conductivity type opposite to the first conductivity type; a main doped region is disposed in the first well region and located below the trench conductive structure, and has the second conductivity type, wherein the second well region and the main doped region are separated by the first well region, and wherein the first trench conductive structure extends from a top surface of the semiconductor substrate toward the main doped region.

2. The high-voltage semiconductor device as claimed in claim 1, wherein a Schottky contact is formed between the first trench conductive structure and the first well region.

3. The high-voltage semiconductor device as claimed in claim 1, wherein the body doped region surrounds a bottom of the first trench conductive structure.

4. The high-voltage semiconductor device as claimed in claim 3, wherein the main doped region and the second well region are separated by a vertical distance between 0.6 micrometers and 1 micrometer.

5. The high-voltage semiconductor device as claimed in claim 1 further includes a second trench-type conductive structure disposed in the first well region and spaced apart from the first trench-type conductive structure.

6. The high-voltage semiconductor device as claimed in claim 1 further includes a buried structure disposed in the semiconductor substrate and located below the first well region, and having the first conductivity type.

7. The high-voltage semiconductor device as claimed in claim 1 further includes a buried structure disposed in the semiconductor substrate and located below the first well region, and having the second conductivity type.

8. The high-voltage semiconductor device as claimed in claim 5, wherein the main doped region and the first trench conductive structure are separated by the first well region.

9. The high-voltage semiconductor device as claimed in claim 8, wherein the main doped region extends beneath the second trench conductive structure.

10. The high-voltage semiconductor device as claimed in claim 1 further includes a gate structure disposed on the semiconductor substrate and covering the isolation structure.

11. The high-voltage semiconductor device as claimed in claim 1, wherein the first trench conductive structure has a depth from the top surface of the semiconductor substrate, the depth being between 1 micrometer and 20 micrometers.

12. The high-voltage semiconductor device as described in claim 1, further comprising: A first conductive component is disposed on the semiconductor substrate and electrically connected to the first trench conductive structure; And a second conductive component is disposed on the semiconductor substrate and electrically connected to the first wiring doped region.

13. The high-voltage semiconductor device as claimed in claim 12, wherein the high-voltage semiconductor device includes a Schottky diode, and the first conductive component serves as an anode electrode of the Schottky diode, and the second conductive component serves as a cathode electrode of the Schottky diode.

14. The high-voltage semiconductor device as described in claim 1, further comprising: A third well region is disposed in the semiconductor substrate and surrounds the first well region, and has the second conductivity type; And a second wiring doped region, disposed in the third well region and adjacent to the top surface of the semiconductor substrate, and having the second conductivity type.

15. The high-voltage semiconductor device as claimed in claim 1, wherein the first conductivity type is N-type and the second conductivity type is P-type.

16. A high-voltage semiconductor device, comprising: A semiconductor substrate; A first well region is disposed in the semiconductor substrate and has a first conductivity type; A plurality of Schottky structures are disposed in the first well region and spaced apart from each other, wherein each Schottky structure includes: a trench conductive structure; an isolation structure surrounding a top of the trench conductive structure; a second well region surrounding a middle portion of the trench conductive structure and having a second conductivity type opposite to the first conductivity type; and a main doped region located below the trench conductive structure and having the second conductivity type, wherein the second well region and the main doped region are separated by the first well region, wherein the first trench conductive structure extends from a top surface of the semiconductor substrate toward the main doped region; and a wire doped region disposed in the first well region and located between the isolation structures adjacent to each other in the Schottky structures, and having the first conductivity type.

17. The high-voltage semiconductor device as described in claim 16, further comprising: A first conductive component is disposed on the semiconductor substrate and electrically connected to the trench conductive structures of the Schottky structure to serve as an anode electrode of a Schottky diode; and a second conductive component is disposed on the semiconductor substrate and electrically connected to the doped region to serve as a cathode electrode of the Schottky diode.

18. The high-voltage semiconductor device as claimed in claim 16, wherein the main doped region and the trench conductive structure are separated by the first well region, and the main doped regions of the Schottky structures are interconnected.

19. The high-voltage semiconductor device as claimed in claim 16, wherein the trench conductive structures of the Schottky structure are spaced apart along a first direction and extend along a second direction perpendicular to the first direction.

20. The high-voltage semiconductor device as claimed in claim 16, wherein the trench-type conductive structure comprises a metal.

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