Semiconductor device and method of manufacturing the same

Abstract

A semiconductor device is obtained by sequentially disposing of a first semiconductor layer, a second semiconductor layer and an electrode unit on a substrate. The first semiconductor layer and the second semiconductor layer have different crystal structures but the same constituent elements, and a heterojunction is formed between them, so that the semiconductor device has a heterostructure. The semiconductor device has excellent electrical performance with high breakdown voltage, low power loss and high efficiency, and can be applied to electronic components that need to operate under extreme conditions such as high temperature, high pressure and high frequency.

Claims

1. A semiconductor device comprising: a substrate; a first semiconductor layer disposed on the substrate, the first semiconductor layer being made of α-Ga₂O₃; a second semiconductor layer disposed on the first semiconductor layer, the second semiconductor layer being made of ε-(AlₓGa₁₋ₓ)₂O₃, 0 ≤ X ≤ 1; and an electrode unit disposed on the second semiconductor layer.

2. The semiconductor device of claim 1 further includes a doped layer located between the first semiconductor layer and the second semiconductor layer.

3. The semiconductor device of claim 2, wherein the material of the doped layer is tin, silicon or germanium.

4. The semiconductor device of claim 1, 2 or 3 further includes a third semiconductor layer disposed between the substrate and the first semiconductor layer, wherein the material of the third semiconductor layer is α-(AlxGa1-x)2O3, 0≤x≤1.

5. The semiconductor device of claim 1 further includes a third semiconductor layer disposed between the first semiconductor layer and the second semiconductor layer, the material of the third semiconductor layer being ε-Ga2O3.

6. The semiconductor device of claim 5, further comprising a first doped layer and a second doped layer, the first doped layer being located between the first semiconductor layer and the third semiconductor layer, and the second doped layer being located between the third semiconductor layer and the second semiconductor layer.

7. The semiconductor device of claim 6, wherein the materials of the first doped layer and the second doped layer are tin, silicon or germanium.

8. A semiconductor device comprising: a substrate; a first semiconductor layer disposed on the substrate, the first semiconductor layer being made of α-(AlxGa1-x)2O3, 0≤x≤1; a second semiconductor layer disposed on the first semiconductor layer, the second semiconductor layer being made of ε-Ga2O3; and an electrode unit disposed on the second semiconductor layer.

9. The semiconductor device of claim 8 further includes a doped layer located between the first semiconductor layer and the second semiconductor layer.

10. The semiconductor device of claim 9, wherein the material of the doped layer is tin, silicon or germanium.

11. The semiconductor element of claim 8 further includes a third semiconductor layer disposed between the second semiconductor layer and the electrode unit, wherein the material of the third semiconductor layer is ε-(AlxGa1-x)2O3, 0≤x≤1.

12. The semiconductor device of claim 11, further comprising a first doped layer and a second doped layer, the first doped layer being located between the first semiconductor layer and the second semiconductor layer, and the second doped layer being located between the second semiconductor layer and the third semiconductor layer.

13. The semiconductor device of claim 12, wherein the materials of the first doped layer and the second doped layer are tin, silicon or germanium.

14. A semiconductor device as claimed in claim 1 or 8, wherein the substrate is a sapphire substrate.

15. A method for manufacturing a semiconductor device, comprising: forming a first semiconductor layer on a substrate, the first semiconductor layer being made of α-Ga2O3; forming a second semiconductor layer on the first semiconductor layer, the second semiconductor layer being made of ε-(AlxGa1-x)2O3, 0≤x≤1; and forming an electrode unit on the second semiconductor layer.

16. A method for manufacturing a semiconductor device, comprising: forming a first semiconductor layer on a substrate, the first semiconductor layer being made of α-(AlxGa1-x)2O3, where 0≤x≤1; forming a second semiconductor layer on the first semiconductor layer, the second semiconductor layer being made of ε-Ga2O3; and forming an electrode unit on the second semiconductor layer.

17. A method of manufacturing a semiconductor device as claimed in claim 15 or 16, wherein a doped layer is formed on the first semiconductor layer before the second semiconductor layer is formed, and the second semiconductor layer is formed on the doped layer.

18. A method for manufacturing a semiconductor device as claimed in claim 17, wherein the material of the doped layer is tin, silicon or germanium.

19. A method for manufacturing a semiconductor device as claimed in claim 15 or 16, wherein the first semiconductor layer and the second semiconductor layer are formed by atomized chemical vapor deposition.

20. A method for manufacturing a semiconductor device as claimed in claim 19, wherein the deposition temperature of the second semiconductor layer is greater than the deposition temperature of the first semiconductor layer.

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