High temperature face plate for deposition application

Abstract

The embodiments disclosed herein relate to a panel for processing a chamber. In one example, the panel includes a body having a plurality of holes formed through the body. A heating element is disposed within the body and surrounds the plurality of holes. A support ring is disposed within the body. The support ring surrounds the heating element. The support ring includes a main body and a cantilever extending radially inward from the main body. The cantilever contacts the body of the panel.

Description

Technical Field

[0001] The embodiments disclosed herein generally relate to a heating panel for a substrate processing chamber. Prior Technology

[0002] In the fabrication of integrated circuits, deposition processes such as chemical vapor deposition (CVD) or atomic layer deposition (ALD) are used to deposit thin films of various materials on semiconductor substrates. In other operations, layer-changing processes (such as etching) are used in a repetitive manner to fabricate various layers of electronic components such as semiconductor devices.

[0003] When assembling integrated circuits, it is desirable to manufacture defect-free semiconductor components, and as the demand for improved devices increases, so too does the demand for improved methods and equipment for manufacturing such devices. Chemicals used in new processes (such as precursor gases) increasingly require enhanced process control (such as temperature control) to perform the process according to predetermined specifications. Therefore, there is a need in the art for process chamber components capable of providing enhanced temperature control for device manufacturing and processing. Summary of the Invention

[0004] In one embodiment, a panel for processing a chamber includes: a body having a plurality of holes formed through the body; a heating element disposed within the body and surrounding the plurality of holes; and a support ring disposed within the body and surrounding the heating element, the support ring including a main body and a cantilever extending radially inward from the main body, the cantilever contacting the body of the panel.

[0005] In another embodiment, a panel for a processing chamber includes a body having a plurality of holes formed through the body. The body includes a first extension and a second extension, each extending outwardly from an outer surface of the body, together defining a recess. Each of the first and second extensions has a greater thickness at its radially outer edge than at its radially inner edge. The panel also includes a heating element disposed within the body, surrounding the plurality of holes, and located radially inner to the first and second extensions. The panel further includes a support ring disposed in the recess of the body, the support ring including a main body and surrounding the heating element, wherein the radially outer edge of each of the first and second extensions contacts the support ring, and the radially inner edge of each of the first and second support rings is spaced apart from the support ring.

[0006] In another embodiment, a processing chamber includes: a chamber body; a substrate support disposed in the chamber body; and a cover assembly disposed on the chamber body, the cover assembly including: a body having a plurality of holes formed through the body; a heating element disposed within the body and surrounding the plurality of holes; and a support ring disposed within the body and surrounding the heating element, the support ring including a main body and a cantilever extending radially inward from the main body, the cantilever contacting the body of a panel. Simple Explanation of the Diagram

[0007] To gain a more detailed understanding of the features described above, the present disclosure, which has been briefly outlined above, can be described in more detail with reference to embodiments (some of which are shown in the accompanying drawings). However, it should be noted that the drawings illustrate only exemplary embodiments and should therefore not be considered as limiting the scope, as the present disclosure may allow for other equally effective embodiments.

[0008] Figure 1A shows a schematic cross-sectional view of a processing chamber according to an embodiment of the present disclosure.

[0009] Figure 1B shows a magnified partial view of the processing chamber in Figure 1A.

[0010] Figure 2 shows an enlarged partial view of the processing chamber 100 of Figures 1A and 1B according to an embodiment of the present disclosure. In particular, Figure 2 shows a panel 138 adjacent to the baffle 136 and the sidewall 104 of the chamber body 102.

[0011] Figure 3 shows an enlarged view of the coupling portion of the panel depicted in Figure 2.

[0012] Figure 4 shows the temperature of a panel according to an embodiment of this disclosure.

[0013] Figure 5A shows a diagram of a panel assembly according to another embodiment of this disclosure.

[0014] Figure 5B shows a perspective view of one embodiment of the support ring.

[0015] To facilitate understanding, the same element symbols have been used where possible to denote common elements in the accompanying drawings. It is contemplated that elements and features of one embodiment may be advantageously incorporated into other embodiments without further description. Implementation

[0016] The embodiments disclosed herein generally relate to an apparatus for distributing gas in a processing chamber. More specifically, the embodiments disclosed herein relate to a metal panel. The panel has a body formed by a distribution portion surrounded by a coupling portion. A heater is disposed within the distribution portion to heat the body to an elevated temperature. A support ring is disposed within the coupling portion of the panel. A cantilever extends from the support ring, thereby creating a load-bearing point to support the panel. A gap is provided between the support ring and the panel. The gap acts as a thermal barrier and limits heat transfer between the distribution portion and the coupling portion of the panel.

[0017] Figure 1A shows a schematic cross-sectional view of a processing chamber 100 according to one embodiment. Figure 1B shows an enlarged schematic view of the details of the processing chamber 100. The processing chamber 100 includes a body 102 having sidewalls 104 and a base 106. A cover assembly 108 is coupled to the body 102. The body 102 and the cover assembly 108 define a processing volume 110. The body 102 is formed of a metallic material (such as aluminum or stainless steel), but other materials suitable for use with the processing volume 110 therein are contemplated. A substrate support 112 is disposed within the processing volume 110 and supports a substrate 114 during processing. The substrate support 112 includes a support body 116 coupled to a shaft 118. The shaft 118 is coupled to a lower surface of the support body 116 and extends out of the body 102 through an opening 120 in the base 106. The shaft 118 is coupled to an actuator 122. Actuator 122 vertically actuates shaft 118 and support body 116 coupled thereto between substrate loading position and substrate processing position. To facilitate processing of substrate 114 in processing chamber 100, substrate 114 is disposed on the upper surface of support body 116 opposite to shaft 118.

[0018] Port 124 is formed in sidewall 104 to facilitate entry and exit of substrate 114 into processing volume 110. Actuation gate 126 (such as a slit valve) selectively allows substrate 114 to pass through port 124 for loading onto or removal from support body 116. Electrode 128 is optionally disposed within support body 116 and electrically coupled to power supply 130 via shaft 118. Power supply 130 selectively biases electrode 128 to generate an electromagnetic field that clamps substrate 114 onto support body 116. In some embodiments, heater 133 (such as a resistance heater) is disposed within support body 116 to heat substrate 114 disposed thereon.

[0019] An inlet port 174 is disposed within a cover 134. Inlet port 174 is fluidly coupled to a gas conduit 146. Gas conduit 146 allows gas from a first gas source 148 (such as a process gas source) to flow into the first volume 140 through inlet port 174. A second gas source 150 supplies cleaning gas to remove particulate deposits from the internal surfaces of the processing chamber 100. A seal 180 (such as an O-ring) is disposed in a groove (such as a dovetail groove) at an annular extension 172 between the baffle 136 and the cover 134 to isolate the processing volume 110 from the external environment, thereby allowing a vacuum to be maintained therein by a vacuum system 132. The vacuum system 132 is fluidly coupled to the processing volume 110 to vent gas from the processing volume 110.

[0020] The cover assembly 108 includes a cover 134, a baffle 136, a panel 138, and a clamp 135. The baffle 136 includes a recessed circular dispensing portion 170 surrounded by an annular extension 172. The baffle is disposed between the cover 134 and the panel 138, and is coupled at the annular extension 172 to a lower surface 141 of the cover 134 and an upper surface 149 of the panel 138. The clamp 135 is coupled to the lower surface of the cover 134, the outer surface 143 of the baffle 136, the outer edge 145 of the support ring 158 (as shown in FIG. 2), and the upper surface 105 of the sidewall 104. The clamp 135 facilitates securing the panel 138. The cover 134 is coupled to the upper surface 137 of the annular extension 172 opposite to the body 102. The panel 138 is coupled to the lower surface 139 of the annular extension 172. A first volume 140 is defined between the baffle 136 and the cover 134. A second volume 142 is defined between the baffle 136 and the lower portion 151 of the panel 138. A plurality of holes 144 are formed through the distribution portion 170 of the baffle 136 and facilitate fluid communication between the first volume 140 and the second volume 142.

[0021] Panel 138 has a dispensing portion 176 and a coupling portion 178 (as shown in FIG. 2), the coupling portion 178 being disposed radially outward of the dispensing portion 176. The dispensing portion 176 is disposed between the processing volume 110 and the second volume 142 and facilitates fluid flow therebetween. The coupling portion 178 surrounds the dispensing portion 176 at the periphery of panel 138. To facilitate the processing substrate 114, an RF generator 182 may be coupled to panel 138 to excite gases from a first gas source 148, a second gas source 150, or both the first gas source 148 and the second gas source 150 to form ionized material. In one embodiment, the RF generator 182 and panel 138, together with electrodes 128, facilitate the generation of capacitively coupled plasma within the processing volume 110.

[0022] One or more orifices 152 are disposed within the dispensing portion 176 through the panel 138. The orifices 152 enable fluid communication between the second volume 142 and the processing volume 110. In operation, gas flows from the inlet port 174 into the first volume 140, through the plurality of orifices 144 in the baffle 136 into the second volume 142, through the plurality of orifices 152 in the panel 138, and into the processing volume 110. The arrangement and size of the orifices 152 allow gas to flow selectively into the processing volume 110 to achieve a desired gas distribution. In one embodiment, uniform gas distribution may be desired, which will be achieved by selectively dispensing gas into the processing volume 110.

[0023] One or more heating elements 160 are disposed in the panel 138. In one embodiment, the heating elements 160 are disposed radially outside the aperture 152. The heating elements 160 can be any element capable of providing heat to the panel 138. In one embodiment, the heating element 160 includes a resistance heater that can be embedded in and surround the aperture 152 of the panel 138. The heating elements 160 heat the panel 138 to a high temperature (such as 300°C or higher). For example, the heating elements 160 can heat the panel to 400°C, 500°C, or higher. Increasing the temperature of the panel 138 to 300°C, 400°C, 500°C, or higher during processing results in a reduction in particle formation on the panel 138, which translates into improved deposition on the substrate 114 and substrate processing, while also increasing tool uptime.

[0024] Figure 2 shows an enlarged partial view of the processing chamber 100 of Figure 1A according to an embodiment of the present disclosure. In particular, Figure 2 shows a panel 138 adjacent to the baffle 136 and the sidewall 104 of the chamber body 102.

[0025] A recess 153 is formed in the radially outward edge of the coupling portion 178 of the panel 138. A support ring 158 is disposed within the recess 153 formed in the coupling portion 178 of the panel 138. The support ring 158 is disposed radially outward of both the distribution portion 176 and the heating element 160 of the panel 138. Seals 154 and 156 are disposed above and below the coupling portion 178 of the panel 138. Seals 154 and 156 are disposed within dovetail grooves in the baffle 136 and the sidewall 104. Seals 154 and 156 may be O-rings, which provide a vacuum seal for the processing volume 110. The support ring 158 provides structural support and coupling support for the panel 138. The support ring 158 is made of a material such as, but not limited to, aluminum, alumina, aluminum nitride, silicon oxide, silicon nitride, or stainless steel. The support ring 158 has a main body 161 and a lip 162, the lip 162 being disposed on the outer edge 145 of the support ring 158. The lip 162 extends radially outward from the support ring 158 and facilitates the handling of the panel 138 during preventive maintenance.

[0026] The support ring 158 further includes a radially inward cantilever 164. The cantilever 164 is positioned opposite the lip 162 and extends radially inward from the inner surface 163 of the support ring 158. The cantilever 164 provides structural support and a weight-bearing surface for the panel 138. For example, the cantilever 164 prevents the panel 138 from sagging, resulting in improved deposition and increased uniformity and processability of the substrate 114. The minimal contact and low thermal conductivity of the support ring 158 trap heat within the panel 138, resulting in limited power for heating the panel and helping to meet thermal budget targets.

[0027] Figure 3 shows an enlarged view of the coupling portion 178 of the panel 138 depicted in Figure 2. As shown in Figure 3, the support ring 158 engages with a recess 153 formed around the circumference of the panel 138. The panel 138 includes a stepped surface corresponding to the shape of the radially inward surface of the support ring 158. To facilitate the assembly of the panel 138 and the support ring 158, the support ring 158 may be formed from multiple segments, which can be assembled to form a complete ring around the panel 138.

[0028] When the support ring 158 is assembled with the panel 138, the support ring 158 contacts the panel 138 only at selected locations within the recess 153, minimizing heat transfer between them. For example, the support ring 158 contacts the panel 138 at (1) the top surface 184 of the cantilever 164; at (2) the radially outward edge of the upper surface 165 of the main body 161 of the support ring 158; and at (3) the radially outward edge of the lower surface 167 of the main body 161 of the support ring 158. The top surface 184 of the cantilever 164 is the load-bearing structure of the support ring 158. In one embodiment, which can be combined with other embodiments, the cantilever 164 has a nominal thickness of about 8 mm to 20 mm. In another embodiment, the cantilever 164 is about 10 mm thick.

[0029] In a location where the edge support ring 158 does not contact the recess 153 of the panel 138, gaps (such as gaps 190, 192a, and 192b) are formed. Gap 190, 192a, and 192b are spaces radially disposed between the panel 138 and the support ring 158. Gap 190 is disposed between the cantilever 164 and the sidewall 185 of the recess 153. In one embodiment, as depicted in FIG3, gap 192a is disposed between the inner surfaces 163a of the support ring 158 and extends at least partially above the upper surface 165 of the main body 161 of the support ring 158, while gap 192b is disposed between the inner surfaces 163b and extends at least partially below the lower surface 167 of the main body 161 of the support ring 158. In another embodiment, gap 192a is disposed between the inner surface 163a of the support ring 158 and the stepped lower surface of the extension 186. A gap 192b is disposed between the inner surface 163b of the support ring 158 and the stepped upper surface of the extension 188. Gap 190, 192a, and 192b minimize the contact area between the panel 138 and the support ring 158 to limit heat transfer from the heating element 160 to the seals 154, 156 to prevent their degradation, thereby keeping the temperatures of the seals 154, 156 low (e.g., below their degradation temperature) and reducing the power demand on the heating element 160. Gap 190, 192a, and 192b provide thermal barriers and additional space for thermal expansion. In one embodiment that can be combined with other embodiments, the width of gap 190, 192a, or 192b is approximately 0.1 mm to 5 mm (e.g., approximately 0.5 mm to 2 mm). It should be understood that the size, shape, and arrangement of the gaps 190, 192a, and 192b disposed around the support ring 158 can be selected according to the desired rate of heat transfer across the coupling portion 178. Furthermore, the depth, width, and cross-section of gaps 190, 192a, and 192b can be adjusted as needed. Any arrangement of gaps, channels, grooves, recesses, or cuts that minimizes heat transfer can be used for thermal disconnection.

[0030] The coupling portion 178 has extensions 186 and 188 that partially define the recess 153. Extensions 186 and 188 provide the main thermal barrier features of this design. The reduced cross-sectional area of ​​extensions 186 and 188 provides reduced heat conduction, resulting in thermal barrier within the coupling portion 178. Extension 186 has a flat upper surface and a stepped lower surface. The flat upper surface of extension 186 is adjacent to the lower surface 139 of baffle 136. Extension 186 extends above the upper surface 165 of the main body 161 of support ring 158. Extension 186 at least partially contacts the upper surface 165 of the main body 161 of support ring 158. The stepped lower surface 189 of extension 186 lies between the radially inward surface of support cantilever 164 and panel 138. Extension 188 has a flat lower surface and a stepped upper surface. The flat lower surface of extension 188 is adjacent to the upper surface 105 of sidewall 104. Extension 188 extends below the bottom surface of support ring 158. Extension 188 at least partially contacts the bottom surface of support ring 158. Due to the presence of the corresponding stepped surfaces, extensions 186 and 188 provide a thermal barrier from distribution portion 176 to coupling portion 178 by creating an additional gap above / below the main body 161. The thermal barrier provided by extensions 186 and 188 limits heat transfer from heating element 160 to vacuum seals 154 and 156. Extensions 186 and 188 are thin-walled portions of panel 138. In one embodiment that can be combined with other embodiments, extensions 186 and 188 have a nominal thickness of about 0.5 mm to 5 mm (e.g., about 0.5 mm to 3 mm thick). It should be understood that the depth, width, and cross-section of extensions 186 and 188 disposed around support ring 158 can be selected according to the desired rate of heat transfer across coupling portion 178.

[0031] Gap 193a and 193b also serve as thermal disconnection. Gap 193a provides thermal disconnection between baffle 136 and extension 186. Gap 193a is defined by a recess in the lower surface 139 of baffle 136 adjacent to vacuum seal 154. Gap 193b is between sidewall 104 and extension 188. Gap 193b is defined by a recess in the upper surface 105 of sidewall 104 adjacent to vacuum seal 156. The depth, width, and cross-section of gaps 193a and 193b can be selected according to the desired rate of heat transfer from panel 138 to seals 154 and 156.

[0032] Figure 4 depicts the temperature gradient across panel 400. Panel 400 is similar to panel 138. The temperature is hottest in region 402, which includes the distribution portion 176 of panel 400 (as shown in Figure 1A). The temperature gradually cools in a radially outward direction, such that region 412 may have the coldest temperature on panel 400. As depicted in Figure 4, panel 400 has regions 402, 404, 406, 408, 410, and 412, which depict different temperatures across panel 400. Figure 4 is an exemplary embodiment, and there may be fewer or more regions. In an exemplary embodiment, as depicted in Figure 4, the temperature of region 402 may be about 350°C or higher. The temperature of region 404 may be about 25°C to 40°C lower than the temperature of region 402, such that the temperature of region 402 may be about 310°C to 325°C. Region 406 includes at least a portion of the coupling portion 178 of panel 400 (as shown in Figure 1). The temperature of region 406 can be approximately 10 to 15°C lower than that of region 404, resulting in a temperature of approximately 300°C for region 406. The temperature of region 408 is approximately 270°C to 280°C. The temperature of region 408 is approximately 20°C to 30°C lower than that of region 406. The lower temperature of region 408 is attributed to gaps 190, 192a, and 192b (as shown in Figure 3). The temperature of region 410 is approximately 180°C to 210°C. The temperature of region 412 is approximately 150°C to 170°C.

[0033] Figure 5A is a cross-sectional view of panel assembly 500. Panel assembly 500 may include one or more of the states described above, without further description.

[0034] Panel assembly 500 is a modular assembly comprising one or more components. For example, the panel assembly includes a first support segment 558a and a second support segment 558b, which together form a loop when engaged with each other. In one example, the first support segment 558a and the second support segment 558b each extend 180 degrees. However, other dimensions are contemplated. The first support segment 558a and the second support segment 558b surround and secure panel 138. Concentric heating elements 560 are embedded within panel 138 to facilitate heating of panel 138. In one example, panel 138 is formed by bonding (e.g., welding or brazing) two plates together, with heating element 560 positioned at the interface between them. The concentric heating element 560 has a connecting end 562 extending from panel 138 to facilitate connection to a power source. The connecting end 562 is positioned in a corresponding opening 594 formed in the support segment 558. Support section 558a may have a corresponding opening 594, which facilitates positioning the connection end 562 in a direction 180 degrees to the direction shown in FIG. 5A. Therefore, the panel assembly 500 can be used in various configurations of chambers (such as in a dual-chamber platform) without requiring chamber-specific components. Although the opening 594 is positioned at approximately 90 degrees to the adjacent surfaces of the first support section 558a and the second support section 558b, other locations are also contemplated.

[0035] Temperature sensors 508 (four are shown) are positioned through each support section 558a, 558b. The temperature sensors 508 are used to determine and regulate the temperature of panel 138. In one example, the temperature sensors are located on the side of opening 594. It is conceivable that more or fewer than four temperature sensors 508 may be used.

[0036] The first support section 558a and the second support section 558b are connected to the mounting bracket 506. The mounting bracket 506 connects the support sections 558a and 558b by adjacent lips 162 adhered to the first support section 558a and the second support section 558b. In one example, each of the first support section 558a and the second support section 558b includes two lips 162 located at the lateral ends of the first support section 558a and the second support section 558b. A plurality of holes 504 are formed through each lip 162 and through the mounting bracket 506 and are aligned with each other to receive fasteners therein. Each lip 162 also includes one or more notches 502 (two are shown in each lip 162) for positioning and holding the panel 138 within the processing chamber 100 (as shown in FIG. 1A).

[0037] Figure 5B depicts one embodiment of support section 558a (where support section 558b is a mirror image). Support section 558a includes a main body 561 and one or more lips 162 (two are shown) disposed on the outer edge 145 of support section 558a. The lips 162 extend radially outward from support section 558a and facilitate the transport panel 138 (as shown in Figure 5A).

[0038] In one embodiment depicted in FIG5B, the cantilever of the support segment 558a is divided into a plurality of segmented cantilever segments 564a to 564f. The operation of the plurality of cantilever segments 564a to 564f is similar to that of cantilever 164 shown in FIG3. The plurality of cantilever segments 564a to 564f extend from the inner surface 563 of the support segment 558a. The plurality of cantilever segments 564a-564f provides a larger surface area, resulting in higher thermal barrier efficiency, while maintaining spacing between them to reduce thermal mass. An opening 594 is formed through the inner surface of the support ring 158. The connection end 562 of the heating element 560 may be provided with an opening 594.

[0039] The embodiments described herein advantageously provide a panel capable of being heated to high temperatures (such as above 350°C) with minimal sag or bend. The disclosed thermal barrier allows the panel temperature to rise to high temperatures, thereby limiting the deposition of contaminant particles while maintaining the sealing capability of the externally disposed seals.

[0040] While the foregoing description pertains to embodiments disclosed herein, other and further embodiments of this disclosure may be designed without departing from its basic scope, and the scope thereof is determined by the appended claims.

[0041] 100: Processing Chamber 102: Main Body 104: Sidewall 105: Upper surface 106: Base 108: Cover component 110: Processing volume 112: Substrate support 114:Substrate 116: Supporting Body 118: Axis 120: Opening 122: Actuator 124: Port 126: Door 128: Electrode 130: Power supply 132: Vacuum System 133: Heater 134: Cover 135: Fixture 136: baffle 137: Upper surface 138: Panel 139: Lower surface 140: First volume 141: Lower surface 142: Second volume 143: Outer surface 144: Kong 145: Outer edge 146: Gas conduit 148: First Gas Source 149: Upper surface 151: Part 2 152: Kong 153: Depression 154: Seals 156: Seals 158: Support ring 160: Heating element 161: Main Body 162: Lip border 163a: Inner surface 163b: Inner surface 164: Cantilever 165: Upper surface 167: Lower surface 170: Allocation Part 172: Annular extension 174: Entry Port 176: Allocation Part 178: Coupling section 180: Seal 182: RF Generator 184: Top surface 185: Sidewall 186: Extension 188: Extension 190: Gap 192a: Gap 192b: Gap 193a: Gap 193b: Gap 400: Panel 402: Area 404: Area 406: Area 408: Area 410: Area 412: Area 500: Panel Components 502: Notch 504: Hole 506: Mounting bracket 508: Temperature Sensor 558a: Support section 558b: Support section 561: Main body 562: Connection end 563: Inner surface 564a: Cantilever 564b: Cantilever 564c: Cantilever 564d: Cantilever 564e: Cantilever 564f: Cantilever 594: Opening

[0042] Domestic storage information (please note in order of storage institution, date, and number) none Overseas storage information (please note in the order of storage country, institution, date, and number) none

Claims

1. A panel for gas distribution in a processing chamber, comprising: A main body having a plurality of holes formed through it; A heating element disposed within the body and surrounding the plurality of holes; and a support ring disposed within the body and surrounding the heating element, the support ring comprising a main body and a cantilever extending radially inward from the main body, the cantilever contacting the body of the panel.

2. The panel as claimed in claim 1, wherein the body comprises aluminum and the support ring comprises aluminum, aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, or stainless steel.

3. A panel for gas distribution in a processing chamber, comprising: A main body having a plurality of holes formed through it; A heating element disposed within the body and surrounding the plurality of holes; and a support ring disposed within the body and surrounding the heating element, the support ring comprising a main body and a cantilever extending radially inward from the main body, the cantilever contacting the body of the panel, wherein a gap is formed between a radially inward surface of the cantilever and the body of the panel.

4. The panel as claimed in claim 1, wherein a gap is formed between a lower surface of the cantilever and the body of the panel.

5. The panel as claimed in claim 1, wherein a first gap is formed between a radially inward surface of the main body of the support ring and the body of the panel, and a second gap is formed between an upper surface of the main body and the body of the panel.

6. The panel as described in claim 5, wherein both the first gap and the second gap are in the range of about 0.1 mm to 5 mm.

7. The panel as described in claim 1, wherein the thickness of the cantilever is in the range of about 8 mm to 20 mm.

8. The panel as claimed in claim 1, wherein the body includes a first extension and a second extension, each extending outwardly from an outer surface of the body, the first extension and the second extension together defining a recess for receiving the support ring.

9. The panel as claimed in claim 8, wherein each of the first extension and the second extension has a greater thickness at one of its radially outward edges than at one of its radially inward edges.

10. The panel as claimed in claim 9, wherein the radially outward edge of each of the first extension and the second extension contacts the support ring, and the radially inward edge of each of the first extension and the second extension is spaced apart from the support ring.

11. A panel for gas distribution in a processing chamber, comprising: A body having a plurality of holes formed through the body, the body including a first extension and a second extension each extending outwardly from an outer surface of the body, the first extension and the second extension together defining a recess, each of the first extension and the second extension having a greater thickness at one radially outer edge than at one radially inner edge; a heating element disposed within the body, the heating element surrounding the plurality of holes, the heating element being located radially inner to the first extension and the second extension; and a support ring disposed in the recess of the body, the support ring including a main body and surrounding the heating element, wherein the radially outer edge of each of the first extension and the second extension contacts the support ring, and the radially inner edge of each of the first extension and the second extension is spaced apart from the support ring.

12. The panel as claimed in claim 11, wherein the body comprises aluminum and the support ring comprises aluminum, aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, or stainless steel.

13. A panel for gas distribution in a processing chamber, comprising: A body having a plurality of holes formed through the body, the body including a first extension and a second extension each extending outwardly from an outer surface of the body, the first extension and the second extension together defining a recess, each of the first extension and the second extension having a greater thickness at one radially outer edge than at one radially inner edge; a heating element disposed within the body, the heating element surrounding the plurality of holes, the heating element being located radially inner to the first extension and the second extension; and a support ring disposed in the recess of the body, the support ring including a main body and surrounding the heating element, wherein the radially outer edge of each of the first extension and the second extension contacts the support ring, and the radially inner edge of each of the first extension and the second extension is spaced apart from the support ring, wherein the support ring further includes a cantilever extending radially inwardly from the main body.

14. The panel as claimed in claim 13, wherein a gap is formed between a radially inward surface of the cantilever and the body of the panel.

15. The panel as described in claim 14, wherein the gap is in the range of about 0.1 mm to 5 mm.

16. The panel as claimed in claim 13, wherein a gap is formed between a lower surface of the cantilever and the body of the panel.

17. The panel as described in claim 16, wherein the gap is in the range of about 0.1 mm to 5 mm.

18. A processing chamber, comprising: One main chamber; A substrate support is disposed in the chamber body; and a cover assembly disposed on the chamber body, the cover assembly comprising: a panel configured to dispense gas in the chamber body, the panel comprising: a body having a plurality of holes formed through the body; a heating element disposed within the body and surrounding the plurality of holes; and a support ring disposed within the body and surrounding the heating element, the support ring comprising a main body and a cantilever extending radially inward from the main body, the cantilever contacting the body of the panel.

19. The processing chamber as claimed in claim 18, wherein the body comprises aluminum and the support ring comprises aluminum, aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, or stainless steel.

20. The processing chamber as claimed in claim 18, wherein a gap is formed between a radially inward surface of the cantilever and the body of the panel.

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