Gas processing apparatus and substrate processing apparatus

Abstract

[Problem] Reducing the amount of dissolving solution used. [Solution] A gas processing apparatus includes a conduit, a partition plate, and a liquid supply unit. The conduit has an internal flow path for gas passage. The partition plate is a porous material formed to divide the flow path into multiple spaces, allowing gas to pass through while retaining liquid. The liquid supply unit supplies the partition plate with a dissolving solution capable of dissolving the target component contained in the gas. Then, the gas processing apparatus brings the dissolving solution held at the partition plate into contact with the gas passing through the flow path.

Description

Technical Field

[0001] This disclosure relates to a gas processing apparatus and a substrate processing apparatus. Prior Technology

[0002] The exhaust gas discharged from the substrate processing apparatus that processes substrates such as semiconductor wafers may contain components of chemicals used for substrate processing, such as acidic components, alkaline components, or organic components.

[0003] Exhaust gases containing pharmaceutical ingredients, when released into the atmosphere, pose a risk to the environment and human health. In some cases, the exhaust path of the substrate processing apparatus is equipped with a removal device, known as a scrubber, that removes pharmaceutical ingredients from the exhaust gases.

[0004] Patent Document 1 discloses a frame having a nozzle inside which sprays a solution containing a pharmaceutical ingredient contained in the exhaust gas, and a scrubber that removes the pharmaceutical ingredient from the exhaust gas by contacting the solution sprayed from the nozzle with the exhaust gas introduced into the frame. [Previous Technical Documents] [Patent Literature]

[0005] [Patent Document 1] Japanese Patent Application Publication No. 2010-114307 Summary of the Invention

[0006] [The problem the invention aims to solve]

[0007] This disclosure provides a technique that can reduce the amount of solvent used. [Problem-solving methods]

[0008] This disclosed gas processing apparatus includes a conduit, a partition plate, and a liquid supply unit. The conduit has an internal flow path for gas passage. The partition plate is a porous material formed to divide the flow path into multiple spaces, allowing gas to pass through while retaining liquid. The liquid supply unit supplies the partition plate with a solution capable of dissolving the target component contained in the gas. The gas processing apparatus then contacts the solution held in the partition plate with the gas flowing through the flow path. [The effects of the invention]

[0009] According to this disclosure, it is possible to reduce the amount of solvent used. Simple Explanation of the Diagram

[0010] [Figure 1] Figure 1 is a diagram showing the schematic structure of the substrate processing system of this embodiment. [Figure 2] Figure 2 is a diagram showing the structure of the processing unit in the first embodiment. [Figure 3] Figure 3 is a diagram showing the structure of the exhaust path of the processing unit in the first embodiment. [Figure 4] Figure 4 is a diagram showing the structure of the gas processing apparatus of the first embodiment. [Figure 5] Figure 5 is a diagram showing the structure of the gas processing apparatus of the second embodiment. [Figure 6] Figure 6 is a timing diagram showing one example of the operation of each part in the flow adjustment process of the second embodiment. [Figure 7] Figure 7 is a diagram showing the structure of the gas processing apparatus in the third embodiment. [Figure 8] Figure 8 is a flowchart illustrating an example of the sequence of flow adjustment processing in the third embodiment. Implementation

[0011] Hereinafter, with reference to the drawings, embodiments of the gas processing apparatus and substrate processing apparatus disclosed in this application will be described in detail. Furthermore, the disclosed technology is not intended to be limited by the embodiments shown below.

[0012] (First Implementation) First, the structure of the substrate processing apparatus of the first embodiment will be described with reference to FIG1.

[0013] Figure 1 is a schematic diagram showing the substrate processing system of this embodiment. Hereinafter, in order to clarify the positional relationships, the X-axis, Y-axis and Z-axis are set to be perpendicular to each other, and the positive direction of the Z-axis is set to the vertical upward direction.

[0014] As shown in Figure 1, the substrate processing system 1 includes a loading / unloading platform 2 and a processing platform 3. The loading / unloading station 2 and the processing station 3 are arranged adjacent to each other.

[0015] The loading / unloading station 2 includes a carrier placement section 11 and a transport section 12. The carrier placement section 11 holds a plurality of carriers C that hold a plurality of substrates (in this embodiment, semiconductor wafers (hereinafter wafers W) in a horizontal position.

[0016] The transfer section 12 is disposed adjacent to the carrier placement section 11, and includes a substrate transfer device 13 and a receiving section 14 inside. The substrate transfer device 13 has a wafer holding mechanism for holding the wafer W. Furthermore, the substrate transfer device 13 is capable of moving in the horizontal and vertical directions and rotating around the vertical axis, and uses the wafer holding mechanism to transfer the wafer W between the carrier C and the receiving section 14.

[0017] Processing station 3 is located adjacent to conveyor section 12. Processing station 3 includes conveyor section 15 and multiple processing units 16. Multiple processing units 16 are arranged on both sides of conveyor section 15.

[0018] The transfer unit 15 includes a substrate transfer device 17 inside. The substrate transfer device 17 includes a wafer holding mechanism for holding the wafer W. Furthermore, the substrate transfer device 17 is capable of moving in the horizontal and vertical directions and rotating around the vertical axis, and uses the wafer holding mechanism to transfer the wafer W between the receiving unit 14 and the processing unit 16.

[0019] The processing unit 16 performs a predetermined substrate processing on the wafer W transported by the substrate transport device 17.

[0020] Furthermore, the substrate processing system 1 includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a memory unit 19. The memory unit 19 stores programs that control various processes executed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the programs stored in the memory unit 19.

[0021] Furthermore, the relevant program can be recorded on a computer-readable memory medium, and can also be installed from that memory medium into the memory unit 19 of the control device 4. Examples of computer-readable memory media include hard disks (HD), flexible disks (FD), optical discs (CD), magneto-optical discs (MO), and memory cards.

[0022] In the substrate processing system 1 configured as described above, firstly, the substrate transport device 13 of the inlet station 2 removes the wafer W from the carrier C placed in the carrier placement section 11 and places the removed wafer W in the receiving section 14. The wafer W placed in the receiving section 14 is then removed from the receiving section 14 by the substrate transport device 17 of the processing station 3 and transported into the processing unit 16.

[0023] The wafer W, which is moved into the processing unit 16, is processed by the processing unit 16 and then removed from the processing unit 16 by the substrate transfer device 17 and placed in the receiving unit 14. Next, the processed wafer W placed in the receiving unit 14 is returned to the carrier C of the carrier placement unit 11 by the substrate transfer device 13.

[0024] Next, the structure of the processing unit 16 and the exhaust path of the processing unit 16 will be described with reference to Figures 2 and 3. Figure 2 is a diagram showing the structure of the processing unit 16 in the first embodiment.

[0025] As shown in Figure 2, the processing unit 16 includes a chamber 20, a substrate holding mechanism 30, a processing fluid supply unit 40, and a recovery cup 50.

[0026] The chamber 20 houses the substrate holding mechanism 30, the processing fluid supply unit 40, and the recovery cup 50. An FFU (Fan Filter Unit) 21 is provided at the top of the chamber 20. The FFU 21 is connected to a gas supply source 23 via a gas supply pipe 22. The FFU 21 supplies gas from the gas supply source 23 to the chamber 20 from above to below, creating a downward flow within the chamber 20.

[0027] The substrate holding mechanism 30 includes a holding portion 31, a support portion 32, and a driving portion 33. The holding portion 31 holds the wafer W horizontally. The support portion 32 is a member extending in the vertical direction, with its base end rotatably supported by the driving portion 33, and its front end horizontally supporting the holding portion 31. The driving portion 33 rotates the support portion 32 about a vertical axis. This substrate holding mechanism 30 rotates the holding portion 31 supported on the support portion 32 by rotating the support portion 32 using the driving portion 33, thereby rotating the wafer W held in the holding portion 31.

[0028] Processing fluid supply unit 40 supplies processing fluid to wafer W. Processing fluid supply unit 40 is connected to processing fluid supply source 70.

[0029] The recovery cup 50 is configured to surround the holding part 31, and the rotation of the holding part 31 captures the processing liquid that spills from the wafer W. A drain port 51 is formed at the bottom of the recovery cup 50. A drain pipe 52 is connected to the drain port 51, and the processing liquid captured by the recovery cup 50 is discharged from the drain port 51 through the drain pipe 52 to the outside of the processing unit 16.

[0030] Furthermore, at the bottom of the recovery cup 50, an exhaust port 53 is formed to discharge the gas supplied from the FFU 21 to the outside of the processing unit 16. An exhaust pipe 54 is connected to the exhaust port 53, and the gas supplied from the FFU 21 to the processing unit 16 is discharged from the exhaust port 53 to the outside of the processing unit 16 through the exhaust pipe 54.

[0031] In some cases, the gas discharged from the processing unit 16 (hereinafter referred to as "discharge gas") may contain components of the processing fluid supplied from the processing fluid supply unit 40. For example, if the processing fluid is an acidic, alkaline, or organic chemical, then the discharge gas may contain acidic, alkaline, and organic components respectively.

[0032] In addition, examples of acidic pharmaceuticals include DHF (dilute hydrofluoric acid) and BHF (a mixture of hydrofluoric acid and ammonium fluoride). Examples of basic pharmaceuticals include SC1 (a mixture of ammonia, hydrogen peroxide, and water). Examples of organic pharmaceuticals include IPA (isopropanol). Pharmaceuticals are not limited to liquids; some are also gases.

[0033] The exhaust gas containing the aforementioned components, when released into the atmosphere, poses a risk of impacting the environment and human health. Therefore, the substrate processing system 1 of the first embodiment includes a gas processing device 100 (see FIG. 3) for removing target components, including any one of acidic, alkaline, and organic components, from the exhaust gas discharged from the processing unit 16. The gas processing device 100 is provided in the exhaust path of the substrate processing system 1.

[0034] Figure 3 is a diagram showing the structure of the exhaust path of the processing unit 16 in the first embodiment. As shown in Figure 3, the substrate processing system 1 in the first embodiment includes a plurality of exhaust pipes 54. One end of the plurality of exhaust pipes 54 is connected to the exhaust port 53 of the plurality of processing units 16, and the other end is connected to the collection exhaust pipe 55.

[0035] As shown in Figure 3, the gas processing device 100 is provided in the manifold exhaust pipe 55. The manifold exhaust pipe 55 is part of the exhaust path of the substrate processing system 1 and is located inside the substrate processing system 1. The gas processing device 100 is also located inside the substrate processing system 1. The exhaust gas, after the target component is removed by the gas processing device 100, is discharged from the substrate processing system 1 through the manifold exhaust pipe 55. Alternatively, if the manifold exhaust pipe 55 extends to the outside of the substrate processing system 1, the gas processing device 100 may also be located outside the substrate processing system 1. Furthermore, if multiple manifold exhaust pipes 55, each located in a plurality of substrate processing systems 1, are connected to a single merging exhaust pipe, the gas processing device 100 may also be located in that merging exhaust pipe.

[0036] Next, the structure of the gas processing apparatus 100 will be described with reference to FIG4. FIG4 is a diagram showing the structure of the gas processing apparatus 100 according to the first embodiment. In FIG4, the exhaust gas flow is represented by dashed arrows, and the dissolved liquid flow is represented by solid arrows.

[0037] As shown in Figure 4, the gas processing device 100 includes a first conduit 110, a second conduit 120, a partition plate 130, a liquid supply unit 140, a gas inlet unit 150, a gas outlet unit 160, a storage tank 170, and a liquid outlet unit 180.

[0038] The first conduit 110 has a first flow path F1 inside, and the second conduit 120 has a second flow path F2 inside. The first conduit 110 and the second conduit 120 are arranged to extend in the vertical direction (Z-axis direction). The shape of the first conduit 110 and the second conduit 120 can be any shape, such as a cylindrical shape or a triangular shape.

[0039] The gas inlet 150 connects the upstream-side manifold 55a (refer to FIG. 3), located upstream of the gas processing device 100, in the manifold 55 to the first conduit 110, and guides the exhaust gas flowing in the upstream-side manifold 55a into the first flow path F1. The gas outlet 160 connects the downstream-side manifold 55b (refer to FIG. 3), located downstream of the gas processing device 100, in the manifold 55 to the second conduit 120, and discharges the exhaust gas passing through the second flow path F2 from the second conduit 120 to the downstream-side manifold 55b. The lower end of the first conduit 110 (i.e., the lower part of the first flow path F1) and the lower end of the second conduit 120 (i.e., the lower part of the second flow path F2) are connected via a reservoir 170.

[0040] Specifically, the gas inlet 150 is connected to the upper end of the first conduit 110, introducing exhaust gas into the first flow path F1 from the upper end of the first conduit 110 (i.e., the upper part of the first flow path F1). Furthermore, the gas outlet 160 is connected to the upper end of the second conduit 120, discharging exhaust gas from the upper end of the second conduit 120 (i.e., the upper part of the second flow path F2) downstream through the exhaust pipe 55b. Therefore, an exhaust gas flow from top to bottom is formed in the first flow path F1, an exhaust gas flow from the lower part of the first flow path F1 to the lower part of the second flow path F2 is formed in the storage tank 170, and an exhaust gas flow from bottom to top is formed in the second flow path F2.

[0041] A partition plate 130 is disposed in the first flow path F1 of the first conduit 110 and the second flow path F2 of the second conduit 120. The partition plate 130 divides the first flow path F1 and the second flow path F2 into a plurality of adjacent spaces S in the vertical direction.

[0042] The partition plate 130 is a porous component formed of a porous material that allows gas to pass through and retains liquid. For example, a porous ceramic is used as the porous material forming the partition plate 130. The porous ceramic is a ceramic that includes at least silicon (Si) and silicon carbide (SiC). The porous ceramic is formed by reinforcing a three-dimensional framework of silicon (Si) with silicon carbide (SiC). The porous ceramic may also include aluminum nitride or silicon nitride.

[0043] The partition plate 130 is installed in a manner that allows for detachment from multiple mounting positions that can adjust the dimensions of the multiple spaces S of the first flow path F1 and the second flow path F2. For example, in the first flow path F1 and the second flow path F2, multiple horizontally extending tracks are formed at equal intervals in the vertical direction, and the partition plate 130 is detachably installed relative to the desired track in the multiple tracks of the first flow path F1 and the second flow path F2. By installing the partition plate 130 on all tracks of the first flow path F1 and the second flow path F2, the dimensions of the multiple spaces S become identical. By removing the partition plate 130 from a portion of the tracks, the dimensions of a portion of the space S can be increased. The dimensions of the multiple spaces S can be the same or different between the first conduit 110 and the second conduit 120. Furthermore, the dimensions of the multiple spaces S can be the same or different between the first conduit 110 and the second conduit 120.

[0044] At least one liquid supply unit 140 is provided in each space S. Specifically, the liquid supply unit 140 is disposed above the partition plate 130 in each space S. The liquid supply unit 140 supplies the dissolving liquid to the partition plate 130 below.

[0045] The liquid supply unit 140 has a first liquid supply unit 141 and a second liquid supply unit 142.

[0046] The first liquid supply unit 141 is connected to the dissolving liquid supply source 141b via a supply pipe 141a. A supply machine group 141c is provided in the supply pipe 141a corresponding to each space S of the first liquid supply unit 141. The dissolving liquid supply source 141b is a dissolving liquid used to dissolve the target components contained in the exhaust gas, for example, pure water or tap water. Furthermore, the dissolving liquid supplied from the dissolving liquid supply source 141b is not limited to pure water or tap water, and can be appropriately selected according to the type of target components contained in the exhaust gas. The supply machine group 141c includes, for example, a switch valve for opening and closing the supply pipe 141a, a mass flow controller, and a temperature regulator for adjusting the temperature of the dissolving liquid. Furthermore, in FIG. 4, for ease of explanation, only the dissolving liquid supply system (supply pipe 141a, dissolving liquid supply source 141b, and supply machine group 141c) on the first conduit 110 side is shown, but the dissolving liquid supply system on the second conduit 120 side is the same as the dissolving liquid supply system on the first conduit 110 side.

[0047] The first liquid supply unit 141 supplies the solution supplied from the solution supply source 141b to the lower partition plate 130. The solution supplied to the partition plate 130 seeps from the top of the partition plate 130 into the porous structure inside the partition plate 130 and is temporarily held by the partition plate 130.

[0048] The second liquid supply unit 142 is connected to the circulating liquid pipe 142a. A pump 142b is installed in the circulating liquid pipe 142a. Furthermore, a supply machine group 142c is installed in the circulating liquid pipe 142a corresponding to each space S of the second liquid supply unit 142. The circulating liquid pipe 142a receives the used dissolved liquid (i.e., the dissolved liquid containing the target components removed from the exhaust gas) stored in the storage tank 170. The pump 142b lifts the dissolved liquid from the storage tank 170 and pressurizes it towards the second liquid supply unit 142 via the circulating liquid pipe 142a. Thus, the dissolved liquid stored in the storage tank 170 is circulated through the circulation path formed by the circulating liquid pipe 142a and the pump 142b. The supply machine group 141c includes, for example, a switch valve for opening and closing the circulating liquid pipe 142a, a mass flow controller, and a temperature regulator for adjusting the temperature of the circulating liquid. Furthermore, in Figure 4, for ease of explanation, only the circulating fluid supply system (circulating fluid pipe 142a and pump 142b) on the first conduit 110 side is shown, but the circulating fluid supply system on the second conduit 120 side is the same as the circulating fluid supply system on the first conduit 110 side.

[0049] The second liquid supply unit 142 supplies circulating liquid, obtained by circulating the dissolved liquid stored in the storage tank 170 through the circulation path, to the lower partition plate 130. The circulating liquid supplied to the partition plate 130 seeps from the top of the partition plate 130 into the porous structure inside the partition plate 130 and is temporarily held by the partition plate 130. Hereinafter, there will be a case where the circulating liquid supplied from the second liquid supply unit 142 and the dissolved liquid supplied from the first liquid supply unit 141 are appropriately combined and referred to as "dissolved liquid".

[0050] The liquid supply unit 140 supplies dissolving liquid downward from the upstream side of the first flow path F1 to the partition plate 130 inside the first conduit 110, and supplies dissolving liquid downward from the downstream side of the second flow path F2 to the partition plate 130 inside the second conduit 120. The dissolving liquid supplied inside the first conduit 110 and the dissolving liquid supplied inside the second conduit 120 are the same type of liquid.

[0051] The storage tank 170 is connected to the downstream side of the first flow path F1 of the first conduit 110 and the upstream side of the second flow path F2 of the second conduit 120, and stores the solution falling from the partition plate 130.

[0052] The liquid discharge section 180 discharges the dissolved liquid stored in the storage tank 170 from the storage tank 170. A drain pipe 181 is connected to the liquid discharge section 180, and a valve 182 is installed on the drain pipe 181.

[0053] Furthermore, the gas processing device 100 includes a liquid level detection unit 171. The liquid level detection unit 171 is provided in the storage tank 170 and detects the liquid level of the dissolved liquid stored in the storage tank 170.

[0054] The detection result of the liquid level detection unit 171 is output to the control unit 18. In addition, the supply units 141c, 142c, pump 142b and valve 182 are controlled by the control unit 18.

[0055] Based on the detection result of the liquid level detection unit 171, the control unit 18 determines whether to supply circulating liquid from the second liquid supply unit 142. If the liquid level detected by the liquid level detection unit 171 (i.e., the liquid level of the dissolved liquid stored in the storage tank 170) exceeds a predetermined upper limit, the control unit 18 determines to supply circulating liquid from the second liquid supply unit 142. Then, the control unit 18 controls the supply machine group 142c and pump 142b to start supplying circulating liquid from the second liquid supply unit 142.

[0056] Furthermore, the control unit 18 adjusts the flow rate and temperature of the dissolving liquid and circulating liquid supplied from the first liquid supply unit 141 and the second liquid supply unit 142 to the partition plate 130 in each space S by controlling the supply machine group 141c and 142c.

[0057] Upon detection, the control unit 18, based on the detection result of the liquid volume detection unit 171, determines whether to supply the dissolving solution from the liquid discharge unit 180. If the liquid volume detected by the liquid volume detection unit 171 (i.e., the volume of the dissolving solution stored in the storage tank 170) exceeds a predetermined upper limit, the control unit 18 determines to supply the dissolving solution from the liquid discharge unit 180. Next, the control unit 18 opens the valve 132. Thereby, the dissolving solution is discharged from the storage tank 170 via the liquid discharge unit 180, and the dissolving solution discharged from the storage tank 170 is discharged to the outside through the drain pipe 181.

[0058] Furthermore, while the decision to supply circulating fluid and discharge dissolved liquid is based on the detection result of the liquid volume detection unit 171, the control unit 18 may also decide based on the detection results of other detection units. For example, the control unit 18 may decide whether to supply circulating fluid from the second liquid supply unit 142 based on the detection result of a concentration detection unit (not shown) that detects the concentration of the target component contained in the dissolved liquid stored in the storage tank 170. Also, for example, the control unit 18 may decide whether to supply dissolved liquid from the liquid discharge unit 180 based on the detection result of a concentration detection unit (not shown) that detects the concentration of the target component contained in the dissolved liquid stored in the storage tank 170. Furthermore, the control unit 18 may adjust the flow rate of the circulating fluid supplied from the second liquid supply unit 142 to the partition plate 130 and the flow rate of the dissolved liquid discharged from the liquid discharge unit 180 based on the detection results of the liquid volume detection unit 171 and the concentration detection unit (not shown).

[0059] The gas processing device 100, as described above, allows the exhaust gas introduced from the gas inlet 150 into the first flow path F1 of the first conduit 110 to pass through the partition plate 130 from top to bottom through the first flow path F1.

[0060] The exhaust gas through the first flow path F1 is introduced into the second flow path F2 of the second conduit 120 through the inside of the storage tank 170, and then passes through the partition plate 130 from top to bottom through the second flow path F2.

[0061] The solution is held in the partition plate 130. Therefore, the exhaust gas, during the period when it passes through the partition plate 130 from top to bottom through the first flow path F1, or during the period when it passes through the partition plate 130 from top to bottom through the second flow path F2, comes into contact with the solution held in the partition plate 130.

[0062] The exhaust gas comes into contact with the dissolving liquid held in the partition plate 130, and the target component contained in the exhaust gas dissolves in the dissolving liquid. In this way, the target component is removed from the exhaust gas. The exhaust gas, having removed the target component, is discharged through the gas discharge section 160 from the second flow path F2 of the second conduit 120 to the downstream manifold exhaust pipe 55b (see FIG. 3). Furthermore, the dissolving liquid containing the target component removed from the exhaust gas falls from the partition plate 130 and is stored in the storage tank 170, and then discharged from the storage tank 170 through the liquid discharge section 180.

[0063] In this way, the gas treatment device 100 retains the solution by means of a partition plate 130 formed of a porous material that allows the exhaust gas to pass through and can retain the liquid, so that the exhaust gas comes into contact with the solution held in the partition plate 130 and the target component is removed from the exhaust gas.

[0064] The solution held in the partition plate 130 is intended to remain there temporarily, allowing it to remain in the first conduit 110 and the second conduit 120 for a longer period compared to a scrubber that continuously sprays out the solution. Therefore, the gas treatment device 100 can reduce the amount of solution used compared to a scrubber.

[0065] As described above, the gas processing apparatus of the first embodiment (e.g., gas processing apparatus 100) includes conduits (e.g., first conduit 110, second conduit 120), partitions (e.g., partition 130), and a liquid supply unit (e.g., liquid supply unit 140). The conduits have flow paths (e.g., first flow path F1, second flow path F2) through which gas (e.g., exhaust gas) passes. The partitions are formed of a porous material that divides the flow paths into multiple spaces (e.g., space S), allowing gas to pass through while retaining liquid. The liquid supply unit supplies a solution capable of dissolving the target component contained in the gas to the partitions. Then, the gas processing apparatus contacts the solution held at the partitions with the gas passing through the flow paths. Therefore, according to the gas processing apparatus of the first embodiment, the amount of solution used can be reduced.

[0066] Furthermore, the partition plate in the first embodiment is installed in a manner that allows it to be detached from multiple mounting positions in which the dimensions of the multiple spaces can be adjusted. Therefore, the gas handling apparatus according to the first embodiment allows for free adjustment of the dimensions of the multiple spaces.

[0067] Furthermore, the gas processing apparatus of the first embodiment includes a plurality of conduits. The plurality of conduits includes a first conduit (e.g., first conduit 110) having a first flow path (e.g., first flow path F1) through which gas flows from top to bottom, and a second conduit (e.g., second conduit 120) having a second flow path (e.g., second flow path F2) through which gas flows from bottom to top. A partition plate is disposed in the first and second flow paths, respectively, dividing the first and second flow paths into a plurality of spaces. The gas processing apparatus further includes a storage tank (e.g., storage tank 170) connecting the downstream side of the first flow path and the upstream side of the second flow path, for storing the dissolved liquid falling from the partition plate. Thus, according to the gas processing apparatus of the first embodiment, the used dissolved liquid (i.e., the dissolved liquid containing the target components removed from the discharged gas) stored in the storage tank 170 can be reused.

[0068] Furthermore, in the first embodiment, at least one liquid supply unit is provided in each space. Therefore, according to the gas processing apparatus of the first embodiment, in each space, since the gas flowing through the flow path can contact the dissolved liquid held in the partition plate, the dissolution efficiency of the target component caused by the dissolved liquid can be improved.

[0069] Furthermore, in the liquid supply unit of the first embodiment, a dissolving liquid is supplied downward from the upstream side of the first flow path to a partition plate inside the first conduit, and a dissolving liquid is supplied downward from the downstream side of the second flow path to a partition plate inside the second conduit. Therefore, according to the gas processing apparatus of the first embodiment, since the possibility of contact between the exhaust gas passing through the partition plate and the dissolving liquid supplied from the liquid supply unit can be increased, the dissolution efficiency of the target component caused by the dissolving liquid can be improved.

[0070] Furthermore, in the first embodiment, the dissolving liquid supplied inside the first conduit and the dissolving liquid supplied inside the second conduit are the same type of liquid. Therefore, according to the gas processing apparatus of the first embodiment, the target component containing any of the acidic, alkaline, or organic components can be removed from the discharged gas using the same type of dissolving liquid common to both the first and second conduits.

[0071] Furthermore, the liquid supply unit in the first embodiment includes a first liquid supply unit (e.g., first liquid supply unit 141) and a second liquid supply unit (e.g., second liquid supply unit 142). The first liquid supply unit supplies the dissolved liquid from the dissolved liquid supply source (e.g., dissolved liquid supply source 141b) to the partition plate. The second liquid supply unit supplies the circulating liquid obtained by circulating the dissolved liquid stored in the storage tank through a circulation path (e.g., circulating liquid pipe 142a and pump 142b) to the partition plate. Therefore, according to the gas processing apparatus of the first embodiment, the amount of fresh dissolved liquid supplied from the dissolved liquid supply source can be reduced.

[0072] Furthermore, the flow rate and temperature of the dissolving liquid and circulating liquid supplied to the partition plate from the first liquid supply unit and the second liquid supply unit of the first embodiment are adjusted in each space. Therefore, according to the gas processing apparatus of the first embodiment, the flow rate and temperature of the dissolving liquid and circulating liquid supplied to the partition plate in each space can be adjusted to a flow rate and temperature suitable for removing the target component.

[0073] Furthermore, the gas processing apparatus of the first embodiment further includes a liquid level detection unit (e.g., liquid level detection unit 171) and a control unit (e.g., control unit 18). The liquid level detection unit detects the liquid level of the dissolved liquid stored in the storage tank. Based on the detection result of the liquid level detection unit, the control unit determines whether to supply circulating liquid from the second liquid supply unit. Thus, according to the gas processing apparatus of the first embodiment, since the supply of circulating liquid can be paused until the liquid level of the dissolved liquid stored in the storage tank reaches an appropriate level, the overuse of circulating liquid can be suppressed.

[0074] Furthermore, the gas processing apparatus of the first embodiment further includes a liquid discharge section that discharges the dissolved liquid stored in the storage tank from the storage tank. The control unit determines whether to supply dissolved liquid from the liquid discharge section based on the detection result of the liquid volume detection unit. Therefore, according to the gas processing apparatus of the first embodiment, since the supply of circulating liquid can be paused until the liquid volume of the dissolved liquid stored in the storage tank reaches an appropriate level, the amount of dissolved liquid to be reused can be ensured.

[0075] Furthermore, the substrate processing apparatus of the first embodiment (e.g., substrate processing system 1) includes multiple processing units (e.g., processing units 16), exhaust channels (e.g., manifold exhaust pipe 55), and a gas processing device (e.g., gas processing device 100). The multiple processing units process the substrate (e.g., wafer W) using chemicals (e.g., processing fluid). The exhaust channels carry gases discharged from the multiple processing units (e.g., exhaust gas). The gas processing device 100 is provided in the exhaust channels to remove the target components contained in the gas flowing through the exhaust channels. Thus, according to the substrate processing apparatus of the first embodiment, the purified exhaust gas, after the target components have been removed, can be discharged to the outside of the substrate processing apparatus.

[0076] Furthermore, the gas processing apparatus of the first embodiment (e.g., gas processing apparatus 100) includes conduits (e.g., first conduit 110, second conduit 120), a porous component (e.g., partition plate 130), and a liquid supply unit (e.g., liquid supply unit 140). The conduits have flow paths (e.g., first flow path F1, second flow path F2) through which gas (e.g., exhaust gas) passes. The porous component is disposed in the flow path and is formed of a porous material that allows gas to pass through while retaining liquid. The liquid supply unit supplies a solution to the porous component that can dissolve the target component contained in the gas. The porous material forming the porous component is a porous ceramic. Then, the gas processing apparatus contacts the solution held in the porous component with the gas passing through the flow path. Thereby, according to the gas processing apparatus of the first embodiment, the durability of the porous component can be improved while reducing the amount of solution used.

[0077] Furthermore, the porous ceramic of the first embodiment is a ceramic containing at least silicon (Si) and silicon carbide (SiC). Therefore, according to the gas processing apparatus of the first embodiment, even when the porous component is thinned, the strength of the porous component can be maintained, and the durability of the porous component can be improved.

[0078] (Second Implementation) Furthermore, in the substrate processing system 1, the operating status of the plurality of processing units 16 changes constantly. For example, the number of operating processing units 16 (that is, the number of processing units 16 that perform substrate processing using processing fluid) increases or decreases in each time period.

[0079] If the flow rate of the solvent supplied from the liquid supply unit 140 to the partition plate 130 remains constant regardless of the number of operating processing units 16, for example, during a period when the number of operating processing units 16 decreases, there is a risk that the solvent will be consumed beyond what is necessary.

[0080] Therefore, the substrate processing system 1 of the second embodiment performs flow rate adjustment processing to adjust the flow rate of the dissolving liquid supplied from the liquid supply unit 140 (the first liquid supply unit 141 and the second liquid supply unit 142) to the partition plate 130 in response to the operation information indicating the operation status of the multiple processing units 16.

[0081] Figure 5 is a diagram showing the structure of the gas processing apparatus 100A according to the second embodiment. Furthermore, in Figure 5, as in Figure 4, the exhaust gas flow is indicated by dashed arrows, and the dissolved liquid flow is indicated by solid arrows. Also, in Figure 5, the same symbols are used for the same parts as in Figure 4.

[0082] In the second embodiment, the multiple processing units 16 and the gas processing device 100A of the substrate processing system 1 are controlled by the control unit 18A. Furthermore, the aforementioned flow rate adjustment process is performed, for example, in response to the formula information 191 stored in the memory unit 19A.

[0083] Formula information 191 is an example of operational information indicating the operating status of multiple processing units 16, which includes information on the number of processing units 16 that should be operating at each time period.

[0084] The control unit 18A performs flow rate adjustment processing based on the number of processing units 16 included in the formula information 191. That is, the control unit 18A adjusts the flow rate of the dissolving liquid supplied from the first liquid supply unit 141 to the partition plate 130 and the flow rate of the circulating liquid supplied from the second liquid supply unit 142 to the partition plate 130 based on the number of processing units 16 included in the formula information 191.

[0085] Next, the flow rate adjustment process of the solvent caused by the control unit 18A will be described with reference to FIG6. FIG6 is a timing diagram showing an example of the operation of each part in the flow rate adjustment process of the second embodiment. In FIG6, "solvent flow rate" refers to the operation of the flow rate of the solvent supplied from the first liquid supply unit 141 to the partition plate 130, and "circulating liquid flow rate" refers to the operation of the flow rate of the circulating liquid supplied from the second liquid supply unit 142 to the partition plate 130. Also, in FIG6, "retained liquid volume" refers to the detected liquid volume (i.e., the liquid volume of the solvent stored in the storage tank 170) caused by the liquid volume detection unit 171. Also, in FIG6, "number of unit operations" refers to the number of processing units 16 included in the formula information 191.

[0086] In the example of Figure 6, preparation processing, flow rate adjustment processing, and standby processing are performed sequentially. First, the control unit 18A starts operating the supply machine group 141c from time T0, initiating preparation processing to supply the dissolving liquid from the first liquid supply unit 141 to the partition plate 130 at maximum flow rate. This preparation processing involves handling the dissolving liquid that is stored in the storage tank 170 for reuse before the flow rate adjustment processing begins.

[0087] Next, when the volume of the solution stored in the storage tank 170 reaches the predetermined volume, and the processing is about to end at time T1, the control unit 18A sends a signal to the first processing unit 16 of the multiple processing units 16 to start the supply of processing fluid. Thereby, the multiple processing units 16 begin processing the wafer W using the processing fluid.

[0088] Furthermore, the control unit 18A begins flow rate adjustment processing at time T1. Specifically, the control unit 18A starts operating the supply machine group 141c, 142c and pump 142b at time T1 to begin supplying the solution from the liquid supply unit 140 (first liquid supply unit 141 and second liquid supply unit 142).

[0089] During the flow rate adjustment process, the control unit 18A firstly, starting from time T1, if the number of processing units 16 (unit operation number) contained in the formula information 191 increases, the flow rate of the solution supplied from the first liquid supply unit 141 and the flow rate of the circulating liquid supplied from the second liquid supply unit 142 will increase.

[0090] As the number of processing units 16 included in formula information 191 (i.e., the number of processing units 16 in operation) increases, the supply flow rate of the dissolving liquid and circulating liquid to the partition plate 130 increases, thus increasing the volume of the dissolving liquid held in the partition plate 130. This increases the likelihood of contact between the exhaust gas passing through the partition plate 130 and the dissolving liquid held in the partition plate 130, thereby improving the dissolution efficiency of the target component caused by the dissolving liquid.

[0091] Next, starting from the time T2 when the unit operation number reaches its maximum value, the first liquid supply unit 141 supplies the dissolving liquid to the partition plate 130 at the maximum flow rate, and the second liquid supply unit 142 supplies the circulating liquid to the partition plate 130 at the maximum flow rate.

[0092] Next, starting from time T3 after a predetermined time has elapsed from time T2, the control unit 18A reduces the flow rate of the dissolving liquid supplied from the first liquid supply unit 141 and the flow rate of the circulating liquid supplied from the second liquid supply unit 142 if the number of unit operations decreases.

[0093] During the time period when the number of processing units 16 (i.e., the number of operating processing units 16) in formula information 191 decreases, the components of the processing fluid contained in the exhaust gas are not large. In this case, the supply flow rate of the dissolving liquid and circulating liquid to the partition plate 130 can be reduced, thereby reducing the dissolution efficiency of the target component caused by the dissolving liquid. As a result, the amount of dissolving liquid used can be reduced because the excessive use of the dissolving liquid can be suppressed.

[0094] Next, at time T4, the control unit 18A stops supplying the machine group 141c, 142c and pump 142b with the solution from the liquid supply unit 140, upon receiving a signal indicating the end of processing of wafer W from all processing units 16. Then, the control unit 18A initiates standby processing from time T4. This standby processing is the process performed during the period between the start of the next substrate processing caused by the multiple processing units 16.

[0095] During this standby process, the supply of solvent from the liquid supply unit 140 is stopped. This reduces the amount of solvent used.

[0096] Furthermore, although the formula information 191 is shown here as containing information about the number of processing units 16 that should operate in each time zone, the content of the formula information 191 is not limited here. The formula information 191 can be any information indicating the operating status of the plurality of processing units 16. For example, the formula information 191 may contain information about the amount or concentration of the target component contained in the exhaust gas discharged from the plurality of processing units 16 in each time zone. In this case, the control unit 18A adjusts the flow rate of the solution supplied from the liquid supply unit 140 to the partition plate 130 based on the amount or concentration of the target component contained in the formula information 191.

[0097] Furthermore, formula information 191 may include not only the amount or concentration of the target ingredient, but also the type of the target ingredient. In this case, control unit 18A may change the type of solution supplied from liquid supply unit 140 to partition plate 130 based on the type of target ingredient included in formula information 191. This allows for appropriate changes in the type of solution to suit the type of target ingredient. Also, control unit 18A may control the supply machines 141c and 142c to adjust the temperature of the solution supplied from liquid supply unit 140 to partition plate 130 based on the type of target ingredient included in formula information 191. This allows for adjusting the temperature of the solution to be suitable for the type of target ingredient.

[0098] As described above, the substrate processing apparatus of the second embodiment (e.g., substrate processing system 1) includes multiple processing units (e.g., processing unit 16), an exhaust path (e.g., manifold exhaust pipe 55), a gas processing device (e.g., gas processing device 100A), and a control unit (e.g., control unit 18A). The multiple processing units process the substrate (e.g., wafer W) using chemicals (e.g., processing fluid). The exhaust path carries gas discharged from the multiple processing units (e.g., exhaust gas). The gas processing device 100 is provided in the exhaust path and removes the target component contained in the gas flowing through the exhaust path. The control unit 18A controls the multiple processing units and the gas processing device. The gas processing device includes conduits (e.g., first conduit 110, second conduit 120), partitions (e.g., partition 130), and a liquid supply unit (e.g., liquid supply unit 140). The conduits have flow paths (e.g., first flow path F1, second flow path F2) through which gas (e.g., exhaust gas) passes. The partition plate is a partition plate that divides the flow path into multiple spaces (e.g., space S), and is formed of a porous material that allows gas to pass through while retaining liquid. The liquid supply unit supplies the partition plate with a solution capable of dissolving the target component contained in the gas. Then, the control unit adjusts the flow rate of the solution supplied from the liquid supply unit to the partition plate in response to operating information indicating the operating status of the multiple processing units. In this way, the substrate processing apparatus according to the second embodiment can reduce the amount of solution used.

[0099] Furthermore, in the second embodiment, the control unit sends a signal to the processing unit that is initially operating among the plurality of processing units to start the supply of the drug (e.g., time T1), thereby initiating the supply of the solvent from the liquid supply unit. Thus, according to the substrate processing apparatus of the second embodiment, the supply of the solvent in the gas processing apparatus can be initiated synchronously with the supply of the drug in the processing unit.

[0100] Furthermore, in the second embodiment, the control unit stops supplying the solvent from the liquid supply unit at the point (e.g., time T4) when it receives a signal indicating the end of substrate processing from all processing units. Thus, the substrate processing apparatus according to the second embodiment can stop the supply of solvent from the gas processing unit synchronously with the end of substrate processing using the reagents in the processing unit.

[0101] Furthermore, the liquid supply unit in the second embodiment includes a first liquid supply unit (e.g., first liquid supply unit 141) and a second liquid supply unit (e.g., second liquid supply unit 142). The first liquid supply unit supplies the solution from the solution supply source (e.g., solution supply source 141b) to the partition plate. The second liquid supply unit supplies the circulating liquid obtained by circulating the solution stored in the storage tank through a circulation path (e.g., circulating liquid pipe 142a and pump 142b) to the partition plate. The control unit adjusts the flow rate of the solution supplied from the first liquid supply unit to the partition plate and the flow rate of the circulating liquid supplied from the second liquid supply unit to the partition plate according to the operating information.

[0102] Specifically, the operation information in the second embodiment includes formula information (e.g., formula information 191) containing the number of processing units to be operated in each time zone. The control unit adjusts the flow rate of the dissolving liquid supplied from the first liquid supply unit to the partition plate and the flow rate of the circulating liquid supplied from the second liquid supply unit to the partition plate based on the number of processing units included in the formula information. Therefore, according to the substrate processing apparatus of the second embodiment, the amount of dissolving liquid used can be reduced by minimizing excessive use of the dissolving liquid.

[0103] Furthermore, the operational information in the second embodiment may include formula information containing the amount or concentration of the target component in the gas discharged from each of the multiple processing units in each time zone. In this case, the control unit may adjust the flow rate of the solvent supplied from the liquid supply unit to the partition plate based on the amount or concentration of the target component contained in the formula information. Therefore, according to the substrate processing apparatus of the second embodiment, excess use of the solvent can be reduced, and the amount of solvent used can be decreased.

[0104] Furthermore, the formula information in the second embodiment may also include the types of target components. In this case, the control unit may change the type of solvent supplied from the liquid supply unit to the partition plate based on the types of target components included in the formula information. Therefore, the substrate processing apparatus according to the second embodiment can appropriately change the type of solvent according to the types of target components.

[0105] Furthermore, in the control unit of the second embodiment, the temperature of the solution supplied from the liquid supply unit to the partition plate can be adjusted based on the type of target component included in the formula information. Therefore, the substrate processing apparatus according to the second embodiment can adjust the temperature of the solution to be suitable for the type of target component.

[0106] (Third Implementation) The substrate processing system 1 of the third embodiment differs from the substrate processing system 1 of the second embodiment in that it performs flow rate adjustment processing based on the detection results of the concentration detection unit that detects the concentration of the target component contained in the exhaust gas.

[0107] Figure 7 is a diagram showing the structure of the gas processing apparatus 100B according to the third embodiment. Furthermore, in Figure 7, as in Figure 5, the exhaust gas flow is indicated by dashed arrows, and the dissolved liquid flow is indicated by solid arrows. Also, in Figure 7, the same symbols are used for the same parts as in Figure 5.

[0108] The multiple processing units 16 and the gas processing device 100B of the substrate processing system 1 in the third embodiment are controlled by the control unit 18B.

[0109] The gas processing apparatus 100B in the third embodiment includes a first concentration detection unit 151 and a second concentration detection unit 161. The first concentration detection unit 151 is provided in the gas inlet section 150 and detects the concentration of the target component contained in the exhaust gas in the first flow path F1 of the first conduit 110 introduced from the gas inlet section 150. The second concentration detection unit 161 is provided in the gas outlet section 160 and detects the concentration of the target component contained in the exhaust gas in the second flow path F2 of the second conduit 120 introduced from the gas outlet section 160.

[0110] The detection results of the first concentration detection unit 151 and the second concentration detection unit 161 are output to the control unit 18B.

[0111] The control unit 18B monitors the detection results of the first concentration detection unit 151 and the second concentration detection unit 161 as operating information indicating the operating status of the complex processing unit 16, and performs flow rate adjustment processing based on the detection results of the first concentration detection unit 151 and the second concentration detection unit 161. That is, the control unit 18B adjusts the flow rate of the dissolving liquid supplied from the first liquid supply unit 141 to the partition plate 130 and the flow rate of the circulating liquid supplied from the second liquid supply unit 142 to the partition plate 130 based on the detection results of the first concentration detection unit 151 and the second concentration detection unit 161.

[0112] Next, the flow rate adjustment process of the solvent caused by the control unit 18B will be described with reference to FIG8. FIG8 is a flowchart showing an example of the sequence of the flow rate adjustment process in the third embodiment.

[0113] As shown in Figure 8, the control unit 18B determines whether the detection concentration of the second concentration detection unit 161 (i.e., the concentration of the target component contained in the exhaust gas flowing through the gas exhaust unit 160) exceeds a preset upper limit (step S101). When it is determined that the detection concentration of the second concentration detection unit 161 exceeds the preset upper limit (step S101; Yes), the control unit 18B performs the following processing. That is, the control unit 18B controls the supply machines 141c and 142c to increase the flow rate of the dissolving liquid supplied from the first liquid supply unit 141 to the partition plate 130 and the flow rate of the circulating liquid supplied from the second liquid supply unit 142 to the partition plate 130 (step S102).

[0114] If the supply flow rate of the dissolving liquid and circulating liquid to the partition plate 130 is increased, the volume of the dissolving liquid held in the partition plate 130 will increase. This increases the likelihood of contact between the exhaust gas passing through the partition plate 130 and the dissolving liquid held in the partition plate 130, thereby improving the dissolution efficiency of the target component caused by the dissolving liquid. As a result, the concentration of the target component contained in the exhaust gas discharged from the gas exhaust section 160 can be reduced.

[0115] On the other hand, if the detection concentration of the second concentration detection unit 161 does not exceed the preset upper limit (step S101; No), the control unit 18B determines whether the detection concentration of the second concentration detection unit 161 is lower than the preset lower limit (step S103). If it is determined that the detection concentration of the second concentration detection unit 161 is lower than the preset upper limit (step S103; Yes), the control unit 18B performs the following processing. That is, the control unit 18B controls the supply machines 141c and 142c to reduce the flow rate of the dissolving liquid supplied from the first liquid supply unit 141 to the partition plate 130 and the flow rate of the circulating liquid supplied from the second liquid supply unit 142 to the partition plate 130 (step S104).

[0116] When the processing in steps S102 and S104 ends, or when the detection concentration of the second concentration detection unit 161 in step S103 is not lower than the preset lower limit (step S103; No), the control unit 18B returns the processing to step S101. This repeats the processing in steps S101 to S104.

[0117] If the detection concentration of the second concentration detection unit 161 is determined to be lower than a preset lower limit, the target component exceeding the required concentration is removed from the exhaust gas. In this case, reducing the flow rate of the dissolving liquid and the flow rate of the circulating liquid can also reduce the dissolution efficiency of the target component caused by the dissolving liquid. This helps to prevent the excessive use of the dissolving liquid.

[0118] Furthermore, although the flow rate adjustment is performed here based on the detection result of the second concentration detection unit 161, the control unit 18B may also perform the flow rate adjustment processing in steps S101 to S104 based on the detection result of the first concentration detection unit 151. Additionally, the control unit 18B may also perform the flow rate adjustment processing in steps S101 to S104 based on the detection concentration of the target component contained in the exhaust gas passing through the first flow path F1 of the first conduit 110 or the second flow path F2 of the second conduit 120.

[0119] Furthermore, the control unit 18B may determine whether the detection concentration of the first concentration detection unit 151 or the second concentration detection unit 161 exceeds a threshold value greater than a preset upper limit value. Then, when the control unit 18B determines that the detection concentration of the first concentration detection unit 151 or the second concentration detection unit 161 exceeds the threshold value, it may perform control to reduce the flow rate of the exhaust gas discharged from the multiple processing unit 16. For example, this control may limit the operation of the processing unit 16 (i.e., the processing unit 16 that performs substrate processing using the processing fluid). Also, for example, there may be control to stop the removal of the next batch of wafers W corresponding to the batch of wafers W being processed in the processing unit 16 from the carrier C. By controlling the reduction of the flow rate of the exhaust gas discharged from the multiple processing unit 16, the concentration of the target component contained in the exhaust gas introduced from the gas introduction unit 150 can be reduced.

[0120] As described above, the gas processing apparatus (e.g., gas processing apparatus 100B) of the substrate processing apparatus (e.g., substrate processing system 1) in the third embodiment includes a concentration detection unit (e.g., a first concentration detection unit 151 and a second concentration detection unit 161). The concentration detection unit detects the concentration of the target component contained in the gas (e.g., exhaust gas). Then, the control unit (e.g., control unit 18) of the third embodiment monitors the detection result of the concentration detection unit as operating information. Based on the detection result of the concentration detection unit, the control unit 18B adjusts the flow rate of the dissolving liquid supplied from the first liquid supply unit (e.g., first liquid supply unit 141) to the partition plate (e.g., partition plate 130) and the flow rate of the circulating liquid supplied from the second liquid supply unit (e.g., second liquid supply unit 142) to the partition plate. In this way, according to the substrate processing apparatus of the third embodiment, the amount of dissolving liquid used can be reduced because the excessive use of dissolving liquid can be reduced.

[0121] (other) In the above embodiments, although the first catheter 110 and the second catheter 120 are extended and arranged in the vertical direction (Z-axis direction), the arrangement of the first catheter 110 and the second catheter 120 is not limited to this. For example, the first catheter 110 and the second catheter 120 may also be arranged at an angle in the vertical direction (Z-axis direction).

[0122] Furthermore, in the above embodiments, although the example described is of the storage tank 170 storing the solution falling from the partition plates 130 respectively disposed in the first flow path F1 of the first conduit 110 and the second flow path F2 of the second conduit 120, the storage tank 170 can also be divided into separate sections for each conduit. For example, the storage tank 170 can be divided into a first storage section corresponding to the first conduit 110 and a second storage section corresponding to the second conduit 120 by a partition wall. In this case, the first storage section stores the solution falling from the partition plate 130 disposed in the first flow path F1 of the first conduit 110, and the second storage section stores the solution falling from the second flow path F2 disposed in the second conduit 120. For example, when the storage tank 170 is divided into a first storage section and a second storage section by a partition wall, different types of solution can be supplied from the liquid supply section 140 inside the first conduit 110 and inside the second conduit 120.

[0123] Furthermore, in the second and third embodiments described above, although the flow rate of the dissolving liquid is adjusted according to the operating information, the number of liquid supply units 140 supplying the dissolving liquid to the partition plate 130 among the multiple liquid supply units 140 can also be increased or decreased according to the operating information. For example, the control unit 18A controls the supply machine groups 141c and 142c. If the number of processing units 16 (i.e., the operating processing units 16) included in the formula information 191 decreases, the number of liquid supply units 140 supplying the dissolving liquid to the partition plate 130 can also be reduced. In this way, the amount of dissolving liquid used can be reduced.

[0124] Furthermore, in the second and third embodiments described above, the number of liquid supply units 140 supplying the dissolving solution to the partition plate 130 can be increased or decreased according to batch-specific information specifying the batch of wafers W to be processed in the processing unit 16. For example, the control unit 18A can control the supply machine groups 141c and 142c to reduce the number of liquid supply units 140 supplying the dissolving solution to the partition plate 130 during the period when the wafers W included in the batch specified by the batch-specific information have not been removed from the carrier C. This reduces the amount of dissolving solution used.

[0125] It should be considered that the embodiments disclosed herein are illustrative and not intended to be limiting. In fact, the aforementioned embodiments can be manifested in various forms. Furthermore, the aforementioned embodiments can be omitted, substituted, or modified in various forms without departing from the scope and spirit of the patent application.

[0126] 1: Substrate processing system 16: Processing Unit 18, 18A, 18B: Control Unit 19, 19A: Memory Department 55: Collector exhaust pipe 100, 100A, 100B: Gas processing unit 110: First catheter 120: Catheter 2 130: Partition 140: Liquid Supply Department 141: First Liquid Supply Department 142: Second Liquid Supply Department 150: Gas Inlet Section 151: First Concentration Detection Section 160: Gas Exhaust Section 161: Second Concentration Detection Section 170: Retention tank 171: Liquid Volume Detection Section 180: Liquid discharge section 191: Formula Information F1: 1st flow path F2: 2nd flow path S: Space

Claims

1. A gas processing apparatus comprising: a conduit having an internal flow path for gas passage; partitions formed of a porous material that divides the flow path into a plurality of spaces, allowing the gas to pass through and holding a liquid; a liquid supply section supplying the partitions with a solution capable of dissolving a target component contained in the gas; and a storage tank for storing the solution falling from the partitions; wherein... The solution held in the aforementioned partition plate is brought into contact with the gas passing through the aforementioned flow path. At least one liquid supply unit is disposed in each of the aforementioned spaces. The aforementioned liquid supply unit has: a first liquid supply unit that supplies the aforementioned solution supplied from the solution supply source to the aforementioned partition plate in each of the aforementioned spaces; and a second liquid supply unit that supplies circulating liquid obtained by circulating the aforementioned solution stored in the aforementioned storage tank through the circulation path to the aforementioned partition plate in each of the aforementioned spaces.

2. The gas processing apparatus as described in claim 1, wherein, The aforementioned partition is installed in a manner that allows it to be attached and detached at multiple installation positions that can adjust the dimensions of the aforementioned multiple spaces of the aforementioned flow path.

3. The gas processing apparatus as described in claim 1, comprising: a plurality of the aforementioned conduits; the plurality of aforementioned conduits including: a first conduit having a first flow path inside which the aforementioned gas can pass from top to bottom; and a second conduit having a second flow path inside which the aforementioned gas can pass from bottom to top; wherein, The aforementioned partition plates are respectively disposed in the aforementioned first flow path and the aforementioned second flow path, dividing the aforementioned first flow path and the aforementioned second flow path into multiple spaces; the aforementioned storage tank connects the downstream side of the aforementioned first flow path and the upstream side of the aforementioned second flow path.

4. The gas processing apparatus as described in claim 3, wherein, The aforementioned liquid supply unit supplies the aforementioned dissolving liquid from the upstream side of the aforementioned first flow path to the aforementioned partition plate inside the aforementioned first conduit, and supplies the aforementioned dissolving liquid from the downstream side of the aforementioned second flow path to the aforementioned partition plate inside the aforementioned second conduit.

5. The gas processing apparatus as described in claim 4, wherein, The solution supplied inside the first conduit is the same type of liquid as the solution supplied inside the second conduit.

6. The gas processing apparatus as described in claim 1, wherein, The aforementioned liquid supply unit includes: a first liquid supply unit that supplies the aforementioned solution from the solution supply source to the aforementioned partition plate; and a second liquid supply unit that supplies circulating liquid obtained by circulating the aforementioned solution stored in the aforementioned storage tank through a circulation path to the aforementioned partition plate.

7. The gas processing apparatus as described in claim 1, wherein, The flow rate and temperature of the aforementioned dissolved liquid and circulating liquid supplied from the aforementioned first liquid supply unit and the aforementioned second liquid supply unit to the aforementioned partition plate are adjusted in each of the aforementioned spaces.

8. The gas processing apparatus as described in claim 7, further comprising: a liquid volume detection unit that detects the liquid volume of the aforementioned dissolved liquid stored in the aforementioned storage tank; and a control unit that determines whether to supply the aforementioned circulating liquid from the aforementioned second liquid supply unit based on the detection result of the aforementioned liquid volume detection unit.

9. The gas processing apparatus as described in claim 1, further comprising: a liquid discharge unit for discharging the aforementioned dissolved liquid stored in the aforementioned storage tank from the aforementioned storage tank; and a control unit for determining, based on the detection result of the aforementioned liquid quantity detection unit, whether to discharge the aforementioned dissolved liquid from the aforementioned liquid discharge unit.

10. The gas processing apparatus as described in claim 9, further comprising: a concentration detection unit for detecting the concentration of the target component contained in the dissolved liquid stored in the aforementioned storage tank; and a control unit for determining whether to supply the aforementioned circulating liquid from the aforementioned second liquid supply unit based on the detection result of the concentration detection unit.

11. A substrate processing apparatus comprising: a plurality of processing units for processing a substrate using a pharmaceutical agent; an exhaust path through which gas discharged from the plurality of processing units flows; and a gas processing device disposed in the exhaust path for removing a target component contained in the gas flowing through the exhaust path from the gas; wherein, The aforementioned gas processing apparatus includes: a conduit having an internal flow path through which the aforementioned gas passes; a partition plate formed of a porous material that divides the flow path into a plurality of spaces, allowing the gas to pass through and holding liquid; a liquid supply unit that supplies the partition plate with a solution capable of dissolving a target component contained in the aforementioned gas; and a storage tank for storing the aforementioned solution falling from the partition plate; wherein, the solution held in the partition plate is brought into contact with the gas passing through the aforementioned flow path, and at least one liquid supply unit is disposed in each of the aforementioned spaces, and the liquid supply unit includes: a first liquid supply unit that supplies the aforementioned solution supplied from a solution supply source to the aforementioned partition plate in each of the aforementioned spaces; and a second liquid supply unit that supplies circulating liquid obtained by circulating the aforementioned solution stored in the aforementioned storage tank through a circulation path to the aforementioned partition plate in each of the aforementioned spaces.

12. A gas processing apparatus comprising: a conduit having a flow path through which gas passes; a porous member formed of a porous material disposed in the flow path to allow the gas to pass through and to retain liquid; a liquid supply section supplying the porous member with a solution capable of dissolving a target component contained in the gas; and a storage tank for storing the solution falling from the porous member; wherein... The porous material forming the aforementioned porous component is a porous ceramic; the solution held in the aforementioned porous component is brought into contact with the gas passing through the aforementioned flow path, the aforementioned porous component divides the aforementioned flow path into a plurality of spaces, and at least one liquid supply unit is disposed in each of the aforementioned spaces, the aforementioned liquid supply unit having: a first liquid supply unit, which supplies the aforementioned solution supplied from the solution supply source to the aforementioned porous component in each of the aforementioned spaces; and a second liquid supply unit, which supplies circulating liquid obtained by circulating the aforementioned solution stored in the aforementioned storage tank through a circulation path to the aforementioned porous component in each of the aforementioned spaces.

13. The gas processing apparatus as described in claim 12, wherein, The aforementioned porous ceramics are ceramics that contain at least silicon (Si) and silicon carbide (SiC).

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