Lithographic apparatus, substrate table, and manufacturing method

Abstract

The present invention provides a method comprising: treating a nodular surface of an object with radiation or heat; and setting parameters of the radiation or heat to achieve a predetermined surface strength, hardness, roughness, coefficient of friction, chemical resistance, wear resistance and / or corrosion resistance of the nodular surface.

Description

Technical Field

[0001] The present invention relates to a substrate stage, a textured stage surface, and a method for implementing nodules and nanostructures on a substrate stage surface used in, for example, lithography systems and processes. Prior Technology

[0002] A lithography apparatus is a machine that applies a desired pattern onto a substrate (typically onto a target portion of the substrate). Lithography apparatuses are used, for example, in the manufacture of integrated circuits (ICs). In this case, a patterning device (which is alternatively called a mask or magnifying mask) is used to generate a circuit pattern to be formed on individual layers of the IC. This pattern can be transferred onto a target portion (e.g., a portion containing a die, a die, or several dies) on a substrate (e.g., a silicon wafer). Pattern transfer is typically performed by imaging onto a radiation-sensitive material (resist) layer provided on the substrate. Generally, a single substrate will contain a network of sequentially patterned adjacent target portions. Known lithography apparatuses include: a so-called stepper, in which each target portion is irradiated by exposing the entire pattern onto the target portion at once; and a so-called scanner, in which each target portion is irradiated by scanning the target portion simultaneously in a given direction ("scanning" direction) with a radiation beam, either parallel or antiparallel to this scanning direction. It is also possible to transfer the pattern from the patterning device to the substrate by imprinting the pattern onto the substrate.

[0003] Another lithography system is an interferometric lithography system, in which there are no patterning devices. Instead, the beams are split into two beams, and a reflection system is used to cause the two beams to interfere at a target portion of the substrate. This interference forms a line at the target portion of the substrate.

[0004] During lithography, different processing steps may require different layers to be formed sequentially on a substrate. Therefore, it may be necessary to position the substrate with high accuracy relative to previous patterns formed on it. Generally, alignment marks are placed on the substrate to be aligned and positioned with reference to a second target. The lithography apparatus can use an alignment device to detect the position of the alignment marks and use the alignment marks to align the substrate to ensure accurate exposure of the self-mask. Misalignment between alignment marks at two different layers is measured as overlay error.

[0005] To monitor the lithography process, parameters of the patterned substrate are measured. For example, parameters may include the overlap error between successive layers formed in or on the patterned substrate, and the critical linewidth of the developed photoresist. This measurement can be performed on the product substrate and / or on a specialized metric target. Various techniques exist for measuring the microstructures formed in the lithography process, including the use of scanning electron microscopes and various specialized tools. A rapid and non-invasive form of specialized testing tool is a scatterometer, in which a beam of radiation is directed onto a target on the surface of the substrate, and the properties of the scattered or reflected beam are measured. The properties of the substrate can be determined by comparing the properties of the beam before and after it has been reflected or scattered by the substrate. For example, this determination can be made by comparing the reflected beam with data stored in a known measurement library associated with known substrate properties. A spectroscatterometer directs a broadband beam of radiation onto the substrate and measures the spectrum (intensity as a function of wavelength) of radiation scattered within a specific narrow angular range. In contrast, an angle-resolved scatterometer uses a monochromatic radiation beam and measures the intensity of the scattered radiation as a function of angle.

[0006] These optical scatterometers can be used to measure parameters such as the critical dimensions of photoresist or overlay error (OV) generated between two layers formed in or on a patterned substrate. The properties of the substrate can be determined by comparing the properties of the illumination beam before and after it is reflected or scattered by the substrate.

[0007] The purpose is to indicate and maintain the tribological properties (e.g., friction, hardness, wear) on the surface of the substrate stage. Substrate stages have difficult-to-achieve surface level tolerances due to the precision requirements of lithography and metrology procedures. Wafers (e.g., semiconductor substrates) that are relatively thin (e.g., <1 mm thick) compared to the width of their surface area (e.g., >100 mm) are particularly sensitive to substrate stage inhomogeneities. Furthermore, ultra-smooth contact surfaces can become "glued" together, which can cause problems when the substrate must be detached from the stage. Summary of the Invention

[0008] Therefore, it is necessary to develop structures and methods for substrate stages that allow for increased wear resistance and frictional properties.

[0009] In some embodiments, a method includes treating a nodular surface of an object with radiation or heat. The method further includes setting parameters for the radiation or heat to achieve predetermined surface strength, hardness, roughness, coefficient of friction, chemical resistance, abrasion resistance, and / or corrosion resistance of the nodular surface.

[0010] In some embodiments, a support platform includes a nodular surface. The nodular surface includes a contact layer configured and treated to achieve predetermined surface strength, hardness, roughness, coefficient of friction, chemical resistance, abrasion resistance, and / or corrosion resistance. The contact layer is treated based on exposure to a radiation beam or heat, such that the parameters of the contact layer are greater than the same parameters of a reference layer having the same construction as the contact layer but not exposed to a radiation beam or heat.

[0011] In some embodiments, a lithography apparatus includes an illumination system, a projection system, and a support stage. The support stage includes a nodular surface. The nodular surface includes a contact layer configured to be treated to achieve predetermined surface strength, hardness, roughness, coefficient of friction, chemical resistance, abrasion resistance, and / or corrosion resistance. The contact layer is treated based on exposure to a radiant beam or heat, such that the parameters of the contact layer are greater than the same parameters of a reference layer having the same construction as the contact layer but not exposed to the radiant beam or heat. The illumination system is configured to illuminate a patterned device. The projection system is configured to project an image of the pattern onto a substrate.

[0012] Further features of the invention, as well as the structure and operation of various embodiments, are described in detail below with reference to the accompanying drawings. It should be noted that the invention is not limited to the specific embodiments described herein. These embodiments are presented herein for illustrative purposes only. Additional embodiments will be apparent to those skilled in the art based on the teachings contained herein. Simple Explanation of the Diagram

[0013] The invention is illustrated in the accompanying drawings, which are incorporated herein and form part of this specification, and together with the description, are used to explain the principles of the invention and to enable those skilled in the art to make and use the embodiments described herein.

[0014] Figure 1A shows a schematic diagram of a reflective lithography device according to some embodiments.

[0015] Figure 1B shows a schematic diagram of a transmission lithography apparatus according to some embodiments.

[0016] Figure 2 shows a more detailed schematic diagram of a reflective lithography device according to some embodiments.

[0017] Figure 3 shows a schematic diagram of a lithography unit according to some embodiments.

[0018] Figure 4 shows a schematic diagram of a substrate stage according to some embodiments.

[0019] Figure 5 shows a cross-sectional schematic diagram of a region of a substrate stage according to some embodiments.

[0020] Figure 6 illustrates method steps for manipulating the properties of a contact surface according to some embodiments.

[0021] Figures 7A and 7B show graphs representing surface configuration measurements of the contact surface according to some embodiments.

[0022] Figure 8 illustrates the laser processing of an object according to some embodiments.

[0023] The features of this invention will become apparent from the detailed description set forth below in conjunction with the accompanying drawings, in which the same reference numerals are used throughout to identify corresponding elements. In these drawings, the same reference numerals generally indicate identical, functionally similar, and / or structurally similar elements. Furthermore, typically, the leftmost digit of the reference numeral first appears in the drawing of that reference numeral. Unless otherwise indicated, the drawings provided throughout this invention should not be interpreted as being drawn to scale. Implementation

[0024] This specification discloses one or more embodiments featuring the characteristics of the invention. The disclosed embodiments are provided as examples. The scope of the invention is not limited to the disclosed embodiments. The claimed features are defined by the appended claims.

[0025] The described embodiments and references to "an embodiment," "an example embodiment," "an exemplary embodiment," etc., in this specification may include specific features, structures, or characteristics, but different embodiments may not necessarily include such specific features, structures, or characteristics. Furthermore, these phrases do not necessarily refer to the same embodiment. Moreover, when a specific feature, structure, or characteristic is described in connection with an embodiment, it should be understood that, whether explicitly described or not, implementing this feature, structure, or characteristic in conjunction with other embodiments is within the understanding of those skilled in the art.

[0026] For ease of description, spatial relative terms such as "below," "under," "lower," "above," "on," "upper," or similar terms may be used herein to describe the relationship between one element or feature and another element or feature illustrated in the figures. In addition to the orientation depicted in the figures, spatial relative terms are also intended to cover different orientations of the device during use or operation. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatial relative descriptors used herein shall be interpreted accordingly.

[0027] As used herein, the term "about" indicates a given quantity value that may vary based on a particular technique. Based on a particular technique, the term "about" may indicate a given quantity value that varies, for example, within 10% to 30% of the value (e.g., ±10%, ±20%, or ±30% of the value).

[0028] However, before describing these embodiments in more detail, it is presented as an example of an environment in which embodiments of the invention may be implemented.

[0029] Example Microfilm System

[0030] Figures 1A and 1B respectively illustrate lithography apparatus 100 and 100', in which embodiments of the present invention can be implemented. Lithography apparatus 100 and 100' each include: an illumination system (illuminator) IL configured to modulate a radiation beam B (e.g., deep ultraviolet or extreme ultraviolet radiation); a support structure (e.g., a mask stage) MT configured to support a patterning device (e.g., a mask, a magnifying mask, or a dynamic patterning device) MA and connected to a first positioner PM configured to accurately position the patterning device MA; and a substrate stage (e.g., a wafer stage) WT configured to hold a substrate (e.g., a resist-coated wafer) W and connected to a second positioner PW configured to accurately position the substrate W. Lithography apparatuses 100 and 100' also have a projection system PS configured to project a pattern imparted by the patterning device MA to the radiation beam B onto a target portion (e.g., containing one or more dies) C of the substrate W. In lithography apparatus 100, the patterning device MA and the projection system PS are reflective. In lithography apparatus 100', the patterning device MA and the projection system PS are transmissive.

[0031] The lighting system IL may include various types of optical components for guiding, shaping, or controlling the radiated beam B, such as refractive, reflective, reflective-refractive, magnetic, electromagnetic, electrostatic, or other types of optical components or any combination thereof.

[0032] The support structure MT holds the patterned device MA in a manner dependent on the orientation of the patterned device MA relative to the reference frame, the design of at least one of the lithography apparatuses 100 and 100', and other conditions such as whether the patterned device MA is held in a vacuum environment. The support structure MT can use mechanical, vacuum, electrostatic, or other clamping techniques to hold the patterned device MA. The support structure MT can be, for example, a frame or stage, which can be fixed or movable as needed. By using sensors, the support structure MT can ensure that the patterned device MA is, for example, in the desired position relative to the projection system PS.

[0033] The term "patterning device" (MA) should be broadly interpreted to refer to any device that can be used to impart a pattern to a radiating beam B in its cross-section in order to generate a pattern in a target portion C of a substrate W. The pattern imparted to the radiating beam B may correspond to a specific functional layer in the device that is generated in the target portion C to form an integrated circuit.

[0034] The patterning device MA can be transmissive (as in the lithography apparatus 100' of Figure 1B) or reflective (as in the lithography apparatus 100 of Figure 1A). Examples of patterning devices MA include magnifying masks, masks, programmable mirror arrays, or programmable LCD panels. Masks are well known in lithography and include mask types such as binary, alternating phase-shift, or attenuated phase-shift, as well as various hybrid mask types. One example of a programmable mirror array employs a matrix configuration of small mirrors, each of which can be individually tilted to reflect the incident radiation beam in different directions. The tilted mirrors impart a pattern to the radiation beam B reflected by the matrix of small mirrors.

[0035] The term "projection system" PS can encompass any type of projection system suitable for the exposure radiation used or for other factors such as the use of a wetting liquid on a substrate W or the use of a vacuum, including refractive, reflective, reflective-refractive, magnetic, electromagnetic, and electrostatic optical systems or any combination thereof. A vacuum environment can be used for EUV or electron beam radiation because other gases can absorb excessive radiation or electrons. Therefore, a vacuum environment can be provided throughout the beam path by means of vacuum walls and vacuum pumps.

[0036] The lithography apparatus 100 and / or lithography apparatus 100' may be configured to have two (dual-stage) or more substrate stages WT (and / or two or more mask stages). In such "multi-stage" machines, additional substrate stages WT can be used in parallel, or preparatory steps can be performed on one or more stages while one or more other substrate stages WT are used for exposure. In some cases, the additional stages may not be substrate stages WT.

[0037] Lithography apparatuses can also fall into the category where at least a portion of the substrate can be covered by a liquid (e.g., water) with a relatively high refractive index to fill the space between the projection system and the substrate. A wetting liquid can also be applied to other spaces within the lithography apparatus, such as the space between the mask and the projection system. Immersion techniques are well known in this art for increasing the numerical aperture of the projection system. As used herein, the term "immersion" does not mean that structures such as the substrate must be submerged in the liquid, but only that the liquid is located between the projection system and the substrate during exposure.

[0038] Referring to Figures 1A and 1B, the illuminator IL receives a radiated beam from the radiation source SO. For example, when the source SO is an excimer laser, the source SO and the lithography devices 100, 100' can be separate physical entities. In such cases, the source SO is not considered part of the lithography devices 100 or 100', and the radiated beam B is delivered from the source SO to the illuminator IL by means of a beam delivery system BD (in Figure 1B) including, for example, suitable guide mirrors and / or beam expanders. In other cases, for example, when the source SO is a mercury lamp, the source SO can be an integral part of the lithography devices 100, 100'. The source SO and the illuminator IL, together with the beam delivery system BD (if necessary), can be referred to as the radiation system.

[0039] The illuminator IL may include an adjuster AD (in Figure 1B) for adjusting the angular intensity distribution of the radiated beam. Generally, at least the outer radial range and / or inner radial range (typically referred to as "σouter" and "σinner," respectively) of the intensity distribution in the pupil plane of the illuminator can be adjusted. Additionally, the illuminator IL may include various other components (in Figure 1B), such as a beam concentrator IN and a condenser CO. The illuminator IL can be used to adjust the radiated beam B to have a desired uniformity and intensity distribution in its cross-section.

[0040] Referring to Figure 1A, a radiation beam B is incident on a patterning device (e.g., a mask) MA held on a support structure (e.g., a mask stage) MT and patterned by the patterning device MA. In the lithography apparatus 100, the radiation beam B is reflected from the patterning device (e.g., the mask) MA. After reflection from the patterning device (e.g., the mask) MA, the radiation beam B passes through a projection system PS, which focuses the radiation beam B onto a target portion C of a substrate W. The substrate stage WT can be accurately moved (e.g., to position different target portions C in the path of the radiation beam B) by means of a second locator PW and a position sensor IF2 (e.g., an interferometric device, a linear encoder, or a capacitive sensor). Similarly, a first locator PM and another position sensor IF1 can be used to accurately position the patterning device (e.g., the mask) MA relative to the path of the radiation beam B. Mask alignment marks M1, M2 and substrate alignment marks P1, P2 can be used to align the patterning device (e.g., the mask) MA and the substrate W.

[0041] Referring to Figure 1B, the radiated beam B is incident on a patterned device (e.g., a mask MA) held on a support structure (e.g., a mask stage MT) and patterned by the patterned device. Having traversed the mask MA, the radiated beam passes through a projection system PS, which focuses the beam onto the target portion C of the substrate W. The projection system has a pupil conjugate PPU leading to the illumination system pupil IPU. The radiated portion diverges from the intensity distribution at the illumination system pupil IPU and traverses the mask pattern without being affected by diffraction at the mask pattern, thus producing an image of the intensity distribution at the illumination system pupil IPU.

[0042] The projection system PS projects an image MP' of a mask pattern MP onto a photoresist layer coated on a substrate W, wherein the image MP' is formed by diffracted beams generated from radiation from an intensity distribution in the marked pattern MP. For example, the mask pattern MP may include a linear and spatial array. Diffraction of radiation at the array, distinct from zero-order diffraction, produces a diffracted beam that changes direction in a direction perpendicular to the line. An undiffracted beam (i.e., a so-called zero-order diffracted beam) traverses the pattern without any change in propagation direction. The zero-order diffracted beam traverses an upper lens or upper lens group upstream of the pupil conjugate PPU of the projection system PS to reach the pupil conjugate PPU. A portion of the intensity distribution in the plane of the pupil conjugate PPU associated with the zero-order diffracted beam is an image of the intensity distribution in the illumination system pupil IPU of the illumination system IL. An aperture device PD is, for example, positioned at or substantially positioned on the plane including the pupil conjugate PPU of the projection system PS.

[0043] The projection system PS is configured to capture not only the zeroth-order diffracted beam, but also the first-order or higher-order diffracted beams (not shown) by means of a lens or lens group L. In some embodiments, dipole illumination can be used to image a line pattern extending in a direction perpendicular to the line to take advantage of the resolution enhancement effect of dipole illumination. For example, the first-order diffracted beam interferes with the corresponding zeroth-order diffracted beam at the wafer W level, thereby producing an image of the line pattern MP with the highest possible resolution and program window (i.e., the usable depth of field combined with the allowable exposure dose deviation). In some embodiments, astigmatic aberration can be reduced by providing a radiating pole (not shown) in the opposite quadrant of the illumination system pupil IPU. Furthermore, in some embodiments, astigmatic aberration can be reduced by blocking the zeroth-order beam in the projection system pupil conjugate PPU associated with the radiating pole in the opposite quadrant. This situation is described in more detail in US 7,511,799 B2, published on March 31, 2009, which is incorporated herein by reference in its entirety.

[0044] The substrate stage WT can be accurately moved (e.g., to position different target portions C in the path of the radiation beam B) using a second positioner PW and a position sensor IF (e.g., an interferometric device, a linear encoder, or a capacitive sensor). Similarly, a first positioner PM and another position sensor (not shown in FIG. 1B) can be used to accurately position the mask MA relative to the path of the radiation beam B (e.g., after mechanically retrieving it from a mask library or during scanning).

[0045] Generally, the mask stage MT can be moved using a long-stroke module (coarse positioning) and a short-stroke module (fine positioning) forming the first positioner PM. Similarly, the substrate stage WT can be moved using a long-stroke module and a short-stroke module forming the second positioner PW. In the case of a stepper (relative to a scanner), the mask stage MT can be connected to only a short-stroke actuator, or it can be fixed. Mask alignment marks M1, M2 and substrate alignment marks P1, P2 can be used to align the mask MA and the substrate W. Although the substrate alignment marks (as illustrated) occupy a dedicated target portion, they can be located in the space between the target portions (called kerf alignment marks). Similarly, in the case where more than one die is disposed on the mask MA, the mask alignment marks can be located between these dies.

[0046] The masking stage MT and the patterned device MA can be located within a vacuum chamber V, where an in-vacuum robot IVR can be used to move patterned devices, such as masks, into and out of the vacuum chamber. Alternatively, when the masking stage MT and the patterned device MA are outside the vacuum chamber, an external vacuum robot, similar to the in-vacuum robot IVR, can be used for various transport operations. Both the in-vacuum robot and the external vacuum robot should be calibrated for the smooth transfer of any payload (e.g., a mask) to a fixed kinematic mount at the transfer station.

[0047] The lithography devices 100 and 100' can be used in at least one of the following modes:

[0048] 1. In step mode, when the entire pattern applied to the radiation beam B is projected onto the target portion C in a single step, the support structure (e.g., mask stage) MT and the substrate stage WT remain substantially stationary (i.e., single static exposure). The substrate stage WT is then shifted in the X and / or Y directions to expose different target portions C.

[0049] 2. In scanning mode, while projecting the pattern applied to the radiation beam B onto the target portion C, the support structure (e.g., mask stage) MT and the substrate stage WT are scanned simultaneously (i.e., single dynamic exposure). The speed and direction of the substrate stage WT relative to the support structure (e.g., mask stage) MT can be determined by the magnification (reduction ratio) and image inversion characteristics of the projection system PS.

[0050] 3. In another mode, while projecting the pattern applied to the radiation beam B onto the target portion C, the support structure (e.g., a mask stage) MT is kept substantially stationary, thereby holding the programmable patterning device, while the substrate stage WT is moved or scanned. A pulsed radiation source SO can be used, and the programmable patterning device is updated as needed after each movement of the substrate stage WT or between successive radiation pulses during a scan. This mode of operation can be readily applied to maskless lithography using programmable patterning devices such as programmable mirror arrays.

[0051] Combinations and / or variations of the described usage patterns or entirely different usage patterns may also be used.

[0052] In another embodiment, the lithography apparatus 100 includes an extreme ultraviolet (EUV) source configured to generate an EUV radiation beam for EUV lithography. Generally, the EUV source is configured to be in a radiation system, and a corresponding illumination system is configured to adjust the EUV radiation beam from the EUV source.

[0053] Figure 2 shows the lithography apparatus 100 in more detail, which includes a source collector device SO, an illumination system IL, and a projection system PS. The source collector device SO is constructed and configured such that a vacuum environment can be maintained within the enclosure structure 220 of the source collector device SO. An EUV radiation emitting plasma 210 can be formed by generating a plasma source through discharge. EUV radiation can be generated by a gas or vapor (e.g., Xe gas, Li vapor, or Sn vapor), wherein an extreme thermal plasma 210 is generated to emit radiation in the EUV range of the electromagnetic spectrum. The extreme thermal plasma 210 is generated, for example, by a discharge that causes at least partial ionization of the plasma. For example, Xe, Li, Sn vapor, or any other suitable gas or vapor with a partial pressure of 10 Pa can be used for efficient radiation generation. In some embodiments, an excited tin (Sn) plasma is provided to generate EUV radiation.

[0054] Radiation emitted by the thermoplasm 210 is transferred from the source chamber 211 to the collector chamber 212 via an optional gas barrier or contaminant trap 230 (also referred to in some cases as a contaminant barrier or foil trap) positioned in or behind an opening in the source chamber 211. The contaminant trap 230 may include a channel structure. The contaminant trap 230 may also include a gas barrier or a combination of a gas barrier and a channel structure. The contaminant trap 230 (or contaminant barrier) further indicated herein includes at least a channel structure.

[0055] Collector chamber 212 may include a radiation collector CO, which may be a so-called grazing incidence collector. The radiation collector CO has an upstream radiation collector side 251 and a downstream radiation collector side 252. Radiation traversing the collector CO may be reflected from grating filter 240 to be focused into a virtual source point IF. The virtual source point INTF is commonly referred to as the intermediate focus, and the source-collector arrangement is configured such that the intermediate focus INTF is located at or near an opening 219 in the enclosure structure 220. The virtual source point INTF is an image of the radiative emission plasma 210. Grating filter 240 is particularly used to suppress infrared (IR) radiation.

[0056] Subsequently, radiation traverses the illumination system IL, which may include a faceted field mirror device 222 and a faceted pupil mirror device 224, configured to provide the desired angular distribution of the radiation beam 221 at the patterned device MA and the desired uniformity of radiation intensity at the patterned device MA. After the radiation beam 221 is reflected at the patterned device MA held by the support structure MT, a patterned beam 226 is formed, and the patterned beam 226 is imaged by the projection system PS onto the substrate W held by the wafer stage or substrate stage WT via reflective elements 228 and 229.

[0057] More components than those shown may typically be present in the illumination optics unit IL and the projection system PS. Depending on the type of lithography device, a grating filter 240 may be present. In addition, more mirrors than those shown in Figure 2 may be present; for example, one to six additional reflective elements may be present in the projection system PS in addition to those shown in Figure 2.

[0058] As shown in Figure 2, the collector optics CO is depicted as a nested collector with grazing incidence reflectors 253, 254, and 255, serving only as an example of a collector (or collector mirror). The grazing incidence reflectors 253, 254, and 255 are arranged symmetrically around the optical axis O, and this type of collector optics CO is preferably used in conjunction with a discharge plasma source (often called a DPP source).

[0059] Exemplary lithography unit

[0060] Figure 3 illustrates a lithography unit 300 according to some embodiments, sometimes also referred to as a lithocell or cluster. A lithography apparatus 100 or 100' may form part of the lithography unit 300. The lithography unit 300 may also include one or more devices for performing pre-exposure and post-exposure processes on a substrate. Conventionally, such devices include a spin coater SC for depositing a resist layer, a developer DE for developing the exposed resist, a cooling plate CH, and a baking plate BK. A substrate handler or robot RO picks up a substrate from input / output ports I / O1, I / O2, moves the substrate between different process devices, and delivers the substrate to the loading rack LB of the lithography apparatus 100 or 100'. These devices, often collectively referred to as a coating and developing system, are controlled by a coating and developing system control unit TCU, which is itself controlled by a supervisory control system SCS, which in turn controls the lithography apparatus via a lithography control unit LACU. Therefore, different devices can be operated to maximize output and processing efficiency.

[0061] Embodiments of the present invention may be implemented in hardware, firmware, software, or any combination thereof. Embodiments of the present invention may also be implemented as instructions stored on a machine-readable medium, which may be read and executed by one or more processors. Machine-readable media may include any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computing device). For example, machine-readable media may include: read-only memory (ROM); random access memory (RAM); magnetic disk storage media; optical storage media; flash memory devices; electrical, optical, acoustic, or other forms of propagation signals (e.g., carrier waves, infrared signals, digital signals, etc.) and others. Furthermore, firmware, software, routines, and / or instructions may be described herein as performing certain actions. However, it should be understood that such descriptions are for convenience only, and such actions are in fact caused by a computing device, processor, controller, or other device executing firmware, software, routines, instructions, etc. []

[0062] Exemplary substrate stage

[0063] Figure 4 illustrates a schematic diagram of a substrate stage 400 according to some embodiments. In some embodiments, the substrate stage includes a substrate stage 402, a support block 404, and one or more sensor structures 406. In some embodiments, the substrate stage 402 includes a clamp to hold a substrate 408 (e.g., an electrostatic clamp). In some embodiments, each of the one or more sensor structures 406 includes a transmission image sensor (TIS) board. The TIS board is a sensor unit that includes one or more sensors and / or markers used in a TIS sensing system for accurately positioning the wafer relative to a projection system (e.g., projection system PS, FIG. 1) and a mask (e.g., mask MA, FIG. 1) of a lithography apparatus (e.g., lithography apparatus 100, FIG. 1). Although the TIS board is illustrated herein, the embodiments herein are not limited to any particular sensor. The substrate stage 402 is disposed on the support block 404. One or more sensor structures 406 are disposed on the support block 404.

[0064] In some embodiments, when the substrate stage 400 supports the substrate 408, the substrate 408 is placed on the substrate stage 402.

[0065] The terms "flat," "flatness," or similar terms may be used herein to describe the structure of a surface relative to a generally flat plane. For example, a curved or non-flat surface may be a surface that does not conform to a flat plate. Protrusions and / or depressions on a surface may also be characterized as deviations from a "flat" plane.

[0066] In some embodiments, the surface of the substrate stage mentioned above (e.g., wafer stage WT in Figures 1A and 1B, substrate stage 402 in Figure 4) may be flat or nodular (e.g., as shown in Figure 5). When the surface of the substrate stage is flat, any particles or contaminants adhering between the substrate stage and the wafer will cause the contaminants to show through the wafer, thereby causing lithography errors in their vicinity. Therefore, contaminants reduce device yield and increase production costs.

[0067] Placing nodules on a substrate stage helps reduce the undesirable effects of planar substrate stages. When a wafer is clamped onto a nodule substrate stage, empty spaces are created in areas where the wafer does not contact the substrate stage. These empty spaces act as pockets for contaminants to prevent printing errors. Another feature is the disintegration of contaminants on the nodule, likely due to the increased load (e.g., increased local pressure or force per unit area) caused by the nodule. Crushing contaminants also helps reduce bleed-through errors. In some embodiments, the combined surface area of ​​the nodule may be about 1-5% of the surface area of ​​the substrate stage. Here, the surface area of ​​the nodule refers to the surface of the nodule that contacts the wafer (e.g., excluding the sidewalls of the nodule). And the surface area of ​​the substrate stage refers to the spacing of the surface of the substrate stage where the nodule resides (e.g., excluding the lateral or back sides of the substrate stage). When a wafer is clamped onto a nodule substrate stage, the load increases by 100 times compared to a planar substrate stage, which is sufficient to disintegrate most contaminants. Although the examples herein use substrate stages, these examples are not intended to be limiting. For example, embodiments of the present invention can be implemented on a photomask stage in various clamping structures (e.g., electrostatic clamps, clamping films) and in various lithography systems (e.g., EUV, DUV).

[0068] Figure 5 shows a cross-sectional schematic diagram of a region of a substrate stage 500 according to some embodiments. The substrate stage 500 includes a nodule surface 502, which includes nodule 504. The nodule surface 502 may be the surface of an electrostatic clamp mounted on the substrate stage 500. When the substrate stage 500 supports a substrate 506, the nodule 504 may contact the substrate 506.

[0069] In some embodiments, each of the nodules 504 has a width or diameter of about 100-1000 micrometers (dimensions parallel to the plane of the nodule surface 502). Each of the nodules 504 has a height of about 10-200, 10-150, or 10-100 micrometers (dimensions perpendicular to the plane of the nodule surface 502). Other dimensions may be used for the nodules 504 based on conditional considerations. For example, the dimensions of the nodules 504 may be based on the size of typical or expected contaminant particles in the lithography apparatus. In another instance, the contact surface area is a parameter that affects friction. Therefore, the dimensions of the nodules 504 may be based on the contact area that achieves a specified friction.

[0070] The nodule-wafer interface controls the functional performance of the substrate stage. For example, when the surface of the substrate stage is smooth, adhesion can occur between the smooth surface of the substrate stage and the smooth surface of the wafer—a phenomenon known as adhesion. One way to alleviate this problem is to roughen the contact surface nodule and / or roughen it. However, with repeated use, the roughened nodule tip does not retain its roughness. The rougher the initial roughness of the nodule tip, the faster it can be ground off. One way to reduce friction at the nodule-wafer interface is to coat the nodule with a low-friction coating. However, in the presence of water (e.g., immersion lithography), the coating can be ground off quite quickly.

[0071] Furthermore, it has been observed that the nodal surfaces of the substrate stage are susceptible to unusually rapid wear, particularly at the edges far from the center of the stage (i.e., uneven wear). Uneven wear causes the wafer to bend when held to the substrate stage, which in turn reduces the accuracy of lithography positioning of the device structure, time-varying stack-up drift, and the like. Due to the overall change in the shape of the holding surface, total wear can reduce imaging performance.

[0072] Typically, the familiar substrate stage used in lithography is sent back to the manufacturer for repair or replaced with a new substrate. Both alternatives can be costly. Furthermore, repair can be a slow process, with many variations depending on the wear characteristics (i.e., non-standard repair processes), and it can often take weeks or months before the final product can be returned to the consumer.

[0073] Exemplary substrate stage manufacturing method

[0074] A method for addressing problems associated with the finishing of contact surfaces (e.g., nodular surfaces used in lithography processes) may extend the lifespan of the surface by manipulating the properties of the surface material during the manufacturing process. For example, during manufacturing, a process can be applied to the contact surface to harden the surface material. A hardened contact surface can be more abrasion-resistant. Hardness and abrasion resistance are non-limiting examples of contact surface properties. Other non-limiting examples of contact surface properties may include surface strength, roughness, coefficient of friction, chemical resistance, corrosion resistance, or the like. Furthermore, the process is not limited to remanufactured surfaces. The contact surfaces returned for finishing can also be recoated with the processes disclosed herein to create a more durable and long-lasting surface on previously used products.

[0075] Figure 6 illustrates method steps for manipulating the properties of a contact surface according to some embodiments. At step 602, the nodular surface of an object (e.g., a substrate, fixture, or the like) is treated with radiation or heat. At step 604, parameters of the radiation or heat are set to achieve predetermined surface strength, hardness, roughness, coefficient of friction, chemical resistance, abrasion resistance, and / or corrosion resistance of the nodular surface.

[0076] Figure 7A shows a graph 702 representing surface configuration measurements of a contact surface (e.g., the top surface of a nodule in an electrostatic clamp) according to some embodiments. The data in graph 702 correspond to a portion of the contact surface that has been laser-treated using the method described in Figure 6. The vertical axis of graph 702 represents the configuration height or depth (in arbitrary units au) relative to the plane of the contact surface. The horizontal axis represents the distance (in arbitrary units au) in the direction perpendicular to the configuration height (i.e., along the surface of the contact surface). Furthermore, material has been removed (e.g., using a grinding process) in region 704, while region 706 has been spared the grinding process.

[0077] In some embodiments, the data in Figure 702 illustrates that the grinding process creates grooves with a depth of approximately 2 μm on the contact surface. The depth of material removed is related to the properties of the contact surface material (e.g., hardness). As previously mentioned, the properties of the contact surface material can be adjusted based on the laser or heat treatment described with respect to Figure 6. For example, a laser can introduce localized heat to the contact surface and induce an annealing effect in the material of the contact surface. In this way, specific areas of the contact surface can be treated compared to, for example, heating the entire object in an oven. Heating certain parts of the object may be undesirable, especially when the object is an assembly of adhesive components with unequal coefficients of thermal expansion.

[0078] For comparison, Figure 7B shows a graph 708 representing surface configuration measurements of a contact surface (e.g., the top surface of a nodule in an electrostatic clamp) according to some embodiments. The axis of graph 708 is the same as the axis in graph 702. The data in graph 708 corresponds to a portion of the contact surface that has not yet been laser-treated. The contact surface shown in Figure 7B indeed has an area 710 that has been exposed to the same polishing process described with reference to Figure 7A and an area 712 that has not been polished.

[0079] In some embodiments, the data in graph 708 shows that the polishing process creates grooves with a depth of approximately 3 μm on the contact surface. Laser treatment can reduce or mitigate the amount of material removed by the polishing process by approximately 33%. Therefore, laser treatment has the effect of altering the material properties of the contact surface, making it more difficult to remove material, i.e., improving wear resistance. Briefly referring to Figure 6, the radiation or thermal parameters at step 604 can correspond to the desired result of the material properties of the contact surface. Radiation or thermal parameters may include, for example, exposure time, pulse, pulse length, amplitude, magnitude, repetition rate, wavelength, focal spot size, focal spot shape, pulse energy, peak pulse power, average power, inter-pulse time, scan speed, scan pitch, scan mode, and / or similar parameters.

[0080] Figure 8 illustrates laser processing of an object according to some embodiments. In some embodiments, the structure may be a nodule surface having a contact layer 802. The contact layer 802 may have a contact surface 804. In some embodiments, the nodule surface may be coated with a sacrificial layer 806 and a transparent confinement layer 808. The sacrificial layer 806 may be disposed on the nodule surface (e.g., disposed on the contact surface 804). The transparent confinement layer 808 may be disposed on the sacrificial layer 806.

[0081] In some embodiments, the method of FIG. 6 can be applied to the nodule surface shown in FIG. 8. For example, a radiation beam 810 (e.g., a laser) is directed toward the nodule surface such that the radiation beam is incident on the transparent confinement layer 808. In the context of the transparent confinement layer 808, the term "transparent" or similar may refer to transparency or partial transparency relative to the wavelength of the radiation beam 810. That is, at least a portion of the energy of the radiation beam 810 can be transmitted through the transparent confinement layer 808, allowing the radiation to interact with the sacrificial layer 806.

[0082] In some embodiments, the sacrificial layer 806 comprises a material that absorbs a radiation beam 810 of a specific wavelength. When the material of the sacrificial layer 806 interacts with the radiation beam 810, the material of the sacrificial layer can rapidly expand (e.g., erode, disintegrate, evaporate, or the like) to generate a shock wave 812. For example, the material of the sacrificial layer 806 may comprise a black adhesive tape. The shock wave 812 can impact and compress the contact layer 802. Compression can alter the material properties of the contact layer 802 (e.g., atomic packing density, surface strength, hardness, roughness, coefficient of friction, chemical resistance, abrasion resistance, and / or corrosion resistance). In this way, the properties of the nodule surface can be manipulated. The laser / shock wave procedure described above may be referred to as laser peening.

[0083] In some embodiments, the absence of the transparent confinement layer 808 can cause the shock wave 812 to expand away from the contact layer 802 rather than toward the contact layer 802—that is, the shock wave energy is wasted. Therefore, the transparent confinement layer 808 is used to confine the expansion material of the sacrificial layer 806 in order to guide the shock wave 812 toward the contact surface 804.

[0084] Referring again to FIG6, in some embodiments, the nodule surface may include the structure described with reference to FIG8. Next, step 602 (the step of treating with radiation or heat) may include transmitting radiation through the transparent confinement layer to irradiate the sacrificial layer. At step 606, the sacrificial layer is disintegrated based on irradiation to generate a shock wave. At step 608, the transparent confinement layer is used to confine the disintegrating material of the sacrificial layer and guide the shock wave toward the nodule surface. At step 610, the molecular packing density of the nodule surface is increased based on the impact of the shock wave on the nodule surface.

[0085] In some embodiments, step 604 of setting (or selecting) radiation or thermal parameters may include setting the radiation or thermal parameters based on the material of the sacrificial layer and / or contact layer 802 (e.g., titanium (e.g., TiN), chromium (e.g., CrN), diamond-like carbon, and / or the like). For example, the generated shock wave may be sensitive to how the material of the sacrificial layer responds to exposure time, pulse, pulse width, amplitude, magnitude, repetition rate, wavelength, and / or the like. The pressure of the shock wave needs to be controlled so that the properties of the nodule surface can be manipulated without damaging the nodule surface.

[0086] The earlier embodiment of Figure 6 refers to applying radiation or heat directly to the nodule surface (i.e., without a sacrificial or confining layer). In some embodiments, treatment with radiation or heat may involve allowing the radiation or heat to interact directly with the nodule surface without first transferring the radiation or heat through another material.

[0087] The method steps of Figure 6 can be performed in any conceivable order, and it is not necessary to perform all the steps. Furthermore, the method steps of Figure 6 described above are merely examples and are not limiting. That is, further method steps and functions can be conceived based on any of the embodiments described herein.

[0088] In some embodiments, when comparing a treated contact layer with an untreated contact layer, the untreated contact layer may be referred to as a reference layer. Before the contact layer is treated, the reference layer and the treated contact layer may have the same or substantially similar construction. In this way, the performance parameters of the treated contact layer can be quantified compared to the reference layer. An example of this comparison may be shown, for example, in Figures 7A and 7B. Figure 7A may correspond to a treated contact layer, and Figure 7B may correspond to a reference layer.

[0089] In some embodiments, a support stage (see, for example, the mask stage MT or substrate stage WT of FIG1) may include a nodule surface comprising a contact layer. The support stage may be a component of a lithography apparatus (e.g., lithography apparatus 100 or 100'). The contact layer may be treated to achieve predetermined surface strength, hardness, roughness, coefficient of friction, chemical resistance, abrasion resistance, and / or corrosion resistance. A contact layer treated based on exposure to a radiation beam or heat has a parameter (e.g., hardness) greater than that of a reference layer having the same configuration as the contact layer but not exposed to a radiation beam or heat. The nodule surface may be a component of an electrostatic clamp that is a component of the support stage.

[0090] The embodiments may be further described using the following terms: 1. A method comprising: Using radiation or heat to treat the nodular surface of an object; and The radiation or heat parameters are set to achieve a predetermined surface strength, hardness, roughness, coefficient of friction, chemical resistance, wear resistance, and / or corrosion resistance on the nodule surface. 2. As in item 1, wherein: The nodule surface includes a sacrificial layer disposed on the nodule surface and a transparent confinement layer disposed on the sacrificial layer; and The transparent confinement layer is at least partially transparent to this radiation. 3. The method of clause 2, wherein the processing comprises transmitting the radiation through the transparent confinement layer to irradiate the sacrificial layer, and the method further comprises: The sacrificial layer is irradiated, causing it to disintegrate and generate a shock wave; and The transparent confinement layer is used to confine the disintegrating material of the sacrificial layer and guide the shock wave toward the nodule surface. 4. The method of clause 3 further includes increasing the packing density of molecules on the surface of the nodule based on guiding the shock wave. 5. The method of clause 1, wherein the treatment comprises causing the radiation or heat to interact directly with the surface of the nodule without first transferring the radiation or heat through another material. 6. The method of Clause 1, wherein the parameters of radiation or heat are selected based on the nodule surface comprising titanium, chromium and / or diamond-like carbon. 7. The method of Clause 1, wherein the settings parameters of the radiation or heat include exposure time, pulse, pulse width, amplitude, magnitude, repetition rate, wavelength, focal spot size, focal spot shape, pulse energy, peak pulse power, average power, inter-pulse time, scan speed, scan pitch and / or scan mode. 8. The method of paragraph 1, wherein the treatment comprises using a laser to treat the surface of the nodule. 9. The method of clause 1 further comprises using an electrostatic clamp, a support platform, or the electrostatic clamp and the support platform as the object. 10. A support platform comprising: A nodule surface includes a contact layer, which is configured to be treated to achieve a predetermined surface strength, hardness, roughness, coefficient of friction, chemical resistance, abrasion resistance, and / or corrosion resistance. The contact layer is treated based on exposure to a radiation beam or heat, such that one parameter of the contact layer is greater than one parameter of a reference layer, which has the same structure as the contact layer but is not exposed to the radiation beam or heat. 11. The support platform of clause 10 further includes an electrostatic clamp that includes the surface of the nodule. 12. The support platform as described in Clause 10, wherein the parameter of the contact layer includes hardness and / or abrasion resistance. 13. The support platform of clause 10, wherein the contact layer comprises titanium, chromium and / or diamond-like carbon. 14. As in item 10, the support platform, wherein: A sacrificial layer is placed on the contact layer; The nodule surface further includes a transparent confinement layer disposed on the sacrificial layer; and The transparent confinement layer is at least partially transparent to the beam. 15. The support platform of clause 14, wherein the contact layer is processed based on the following operations: allowing radiation to pass through the transparent confinement layer to irradiate the sacrificial layer, causing the sacrificial layer to disintegrate based on the irradiation to generate a shock wave, and using the transparent confinement layer to confine the disintegrating material of the sacrificial layer and guide the shock wave toward the nodule surface. 16. A lithography apparatus comprising: An illumination system configured to illuminate a patterned device. A projection system configured to project an image of a pattern onto a substrate; and A support platform, comprising: A nodule surface includes a contact layer, which is configured to be treated to achieve a predetermined surface strength, hardness, roughness, coefficient of friction, chemical resistance, abrasion resistance, and / or corrosion resistance. The contact layer is treated based on exposure to a radiation beam or heat, such that one parameter of the contact layer is greater than one parameter of a reference layer, which has the same structure as the contact layer but is not exposed to the radiation beam or heat. 17. The lithography apparatus of clause 16 further includes an electrostatic clamp that includes the surface of the nodule. 18. The lithography apparatus of clause 16, wherein the parameter of the contact layer includes hardness and / or abrasion resistance. 19. The lithography apparatus of clause 16, wherein the contact layer comprises titanium, chromium and / or diamond-like carbon. 20. The lithography apparatus of item 16, wherein the support stage is configured to support the substrate. 21. The lithography apparatus of clause 16, wherein the support platform is configured to support the patterned device. 22. The lithography apparatus as described in item 16, wherein: A sacrificial layer is placed on the contact layer; The nodule surface further includes a transparent confinement layer disposed on the sacrificial layer; and The transparent confinement layer is at least partially transparent to the beam. 23. The lithography apparatus of paragraph 22, wherein the contact layer is processed based on the following operations: allowing radiation to be transmitted through the transparent confinement layer to irradiate the sacrificial layer, causing the sacrificial layer to disintegrate based on the irradiation to generate a shock wave, and using the transparent confinement layer to confine the disintegrating material of the sacrificial layer to guide the shock wave toward the nodule surface.

[0091] While reference may be specifically made herein to the use of lithography devices in IC manufacturing, it should be understood that the lithography devices described herein may have other applications, such as manufacturing integrated optical systems, guiding and detecting patterns for magnetic domain memory, flat panel displays, LCDs, thin-film magnetic heads, and so on. Those skilled in the art will understand that, in the context of these alternative applications, any use of the terms "wafer" or "die" herein may be considered synonymous with the more general terms "substrate" or "target portion," respectively. The substrates mentioned herein may be processed before or after exposure in, for example, in coating and developing system units (typically tools for applying a resist layer to a substrate and developing the exposed resist), measurement units, and / or inspection units. Where applicable, the disclosures herein may be applied to these and other substrate processing tools. Furthermore, substrates may be processed more than once (e.g.) to produce multilayer ICs, such that the term "substrate" as used herein may also refer to a substrate that already contains multiple processed layers.

[0092] While reference may be specifically made to the use of the disclosed embodiments within the context of optical lithography, it will be understood that the disclosed embodiments can be used in other applications (e.g., imprinting) and are not limited to optical lithography where the context permits. In imprinting, the configuration of a patterned device defines a pattern generated on a substrate. The configuration of the patterned device can be pressed into a resist layer supplied to the substrate, where the resist is cured by applying electromagnetic radiation, heat, pressure, or a combination thereof. After the resist has cured, the patterned device is removed from the resist, thereby leaving a pattern therein.

[0093] It should be understood that the wording or terminology used herein is for descriptive purposes rather than limiting, and that the terminology or terminology of this invention shall be interpreted by those skilled in the art in accordance with the teachings herein.

[0094] The above examples of embodiments of the present invention are illustrative and not limiting. Other suitable modifications and adjustments to various adjustments and parameters that will be obvious to those skilled in the art are typically encountered in this field and are within the spirit and scope of the present invention.

[0095] Although specific embodiments of the invention have been described above, it should be understood that embodiments of the invention may be practiced in other ways different from those described. The description is intended to be illustrative and not restrictive. Therefore, those skilled in the art will readily appreciate that modifications can be made to the invention as described without departing from the scope of the claims set forth below.

[0096] It should be understood that the [Implementation] section, rather than the [Summary of the Invention] and [Summary of the Invention] sections, is intended to interpret the scope of the claims. The [Summary of the Invention] and [Summary of the Invention] sections may set forth one or more, but not all, exemplary embodiments of the invention as conceived by the inventors, and therefore are not intended to limit the invention or the scope of the appended claims in any way.

[0097] The invention has been described above using function building blocks that illustrate implementations of specific functions and their relationships. For ease of description, the boundaries of these function building blocks have been arbitrarily defined herein. Alternative boundaries can be defined as long as the specified functions and their relationships are properly executed.

[0098] The foregoing description of specific embodiments so fully discloses the general nature of the invention that, without departing from the general concept of the invention, others can easily modify and / or adapt these specific embodiments for various applications by means of knowledge within the skill scope of applying this art, without engaging in undue experimentation. Therefore, based on the teachings and guidance presented herein, such adaptations and modifications are intended to be within the meaning and scope of equivalents of the disclosed embodiments.

[0099] The breadth and scope of the protected subject matter should not be limited by any of the above exemplary embodiments, but should be defined only according to the following claims and their equivalents.

[0100] 100: Microfilm Installation 100': Microfilm installation 210: EUV radiation-emitting plasma 211: Source Chamber 212: Collector Chamber 219: Opening 220: Enclosure Structure 221: Radiation Beam 222: Faceted field mirror device 224: Faceted pupillary lens device 226: Patterned Beams 228: Reflective element 229: Reflective element 230: Contaminant trap / contaminant barrier 240: Grating filter 251: Upstream radiation collector side 252: Downstream radiation collector side 253: Grazing incidence reflector 254: Grazing incidence reflector 255: Grazing incidence reflector 300: Microfilm Unit 400: Substrate stage 402:Substrate table 404: Support Block 406: Sensor Structure 500:Substrate table 502: Nodule surface 504: nodule 506:Substrate 602: Steps 604: Steps 606: Steps 608: Steps 702: Curve Graph 704: Area 706: Area 708: Curve Chart 710: Area 712: Area 802: Contact Layer 804: Contact Surface 806: Sacrificial Layer 808: Transparent Limitation Layer 810: Radiation beam 812: Shockwave AD: Adjuster B: Radiation beam BD: Beam Delivery System BK: Baking Plate C: Target Section CH: Cooling plate CO: Radiation collector / concentrator DE: Developer IF1: Position sensor IF2: Position sensor IL: Lighting System IN: Optical Accumulator INTF: Virtual Source / Position Sensor IPU: Illumination System Pupil IVR: Vacuum Robot I / O1: Input Port I / O2: Output Port L: Lens or lens group LACU: Microfilm Control Unit LB: Loading frame M1: Mask alignment mark M2: Mask alignment mark MA: Patterning device MP: Masking Pattern MP': Image MT: Support structure O: Optical axis P1: Substrate alignment mark P2: Substrate alignment mark PD: Aperture Device PM: First Positioner PPU: Pupil conjugate PU: Processing Unit PS: Projection system PW: Second Positioner RO: Robot SC: Spin coater SCS: Supervisory Control System SO: Source / Source Collector Device TCU: Coating and Developing System Control Unit V: Vacuum chamber W: substrate WT: substrate table X: Direction Y: direction Z: Direction

Claims

1. A method for manipulating the properties of a surface material, comprising: treating a burled surface of an object with radiation or heat; and setting parameters of the radiation or heat to achieve predetermined surface strength, hardness, roughness, coefficient of friction, chemical resistance, abrasion resistance, and / or corrosion resistance of the burled surface, wherein: The nodule surface includes a sacrificial layer disposed on the nodule surface and a transparent confinement layer disposed on the sacrificial layer; and the transparent confinement layer is at least partially transparent to the radiation.

2. The method of claim 1, wherein the process includes transmitting the radiation through the transparent confinement layer to irradiate the sacrificial layer, and the method further includes: causing the sacrificial layer to disintegrate based on the irradiation of the sacrificial layer to generate a shock wave; using the transparent confinement layer to confine the disintegrating material of the sacrificial layer to guide the shock wave toward the nodule surface; and increasing one of the molecular packing densities on the nodule surface based on the guiding of the shock wave.

3. As in request item 1, where: The process involves directly interacting the radiation or heat with the nodule surface; and the parameters of the radiation or heat are selected based on the nodule surface containing titanium, chromium, and / or diamond-like carbon.

4. The method of claim 1, wherein the setting parameters of the radiation or heat include exposure time, pulse, pulse width, amplitude, magnitude, repetition rate, wavelength, focal size, focal shape, pulse energy, peak pulse power, average power, inter-pulse time, scan speed, scan pitch and / or scan mode.

5. The method of claim 1, further comprising using an electrostatic clamp, a support table, or the electrostatic clamp and the support table as the object, wherein the processing comprises treating the nodule surface with a laser.

6. A support platform comprising: a nodular surface including a contact layer, the contact layer being treated to achieve predetermined surface strength, hardness, roughness, coefficient of friction, chemical resistance, abrasion resistance, and / or corrosion resistance; wherein: The contact layer is treated based on exposure to a radiation beam or exposure to heat, such that one parameter of the contact layer is greater than one parameter of a reference layer having the same structure as the contact layer but not exposed to the radiation beam or heat; a sacrificial layer is disposed on the contact layer; the nodule surface further includes a transparent confinement layer disposed on the sacrificial layer; and the transparent confinement layer is at least partially transparent to the beam.

7. The support platform of claim 6, further comprising an electrostatic clamp that includes the nodule surface, wherein: The parameters of the contact layer include hardness and / or wear resistance; and the contact layer contains titanium, chromium and / or diamond-like carbon.

8. The support platform of claim 6, wherein the contact layer is processed based on the following operations: allowing radiation to pass through the transparent confinement layer to irradiate the sacrificial layer, causing the sacrificial layer to disintegrate based on the irradiation to generate a shock wave, and using the transparent confinement layer to confine the disintegrating material of the sacrificial layer and guide the shock wave toward the nodule surface.

9. A lithography apparatus comprising: an illumination system configured to illuminate a pattern of a patterned device; a projection system configured to project an image of the pattern onto a substrate; and a support stage comprising: a nodular surface including a contact layer, the contact layer being treated to achieve predetermined surface strength, hardness, roughness, coefficient of friction, chemical resistance, abrasion resistance, and / or corrosion resistance; wherein: The contact layer is treated based on exposure to a radiation beam or exposure to heat, such that one parameter of the contact layer is greater than one parameter of a reference layer having the same structure as the contact layer but not exposed to the radiation beam or heat; a sacrificial layer is disposed on the contact layer; the nodule surface further includes a transparent confinement layer disposed on the sacrificial layer; and the transparent confinement layer is at least partially transparent to the beam.

10. The lithography apparatus of claim 9, further comprising an electrostatic clamp that includes the nodule surface, wherein: The parameters of the contact layer include hardness and / or wear resistance; and the contact layer contains titanium, chromium and / or diamond-like carbon.

11. The lithography apparatus of claim 9, wherein the support platform is configured to support the substrate or the support platform is configured to support the patterned device.

12. The lithography apparatus of claim 9, wherein the contact layer is processed based on the following operations: allowing radiation to be transmitted through the transparent confinement layer to irradiate the sacrificial layer, causing the sacrificial layer to disintegrate based on the irradiation to generate a shock wave, and using the transparent confinement layer to confine the disintegrating material of the sacrificial layer and guide the shock wave toward the nodule surface.

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