Substrate processing apparatus

Abstract

A substrate processing apparatus according to an example embodiment includes: a cavity having sidewalls; a base for mounting a substrate inside the cavity; an upper dome covering the upper surface of the cavity and formed of a dielectric material; a lower dome covering the lower surface of the cavity and formed of a dielectric material; a gasket disposed on the inner side of the cavity and between the upper and lower domes; and an antenna disposed on the upper dome and generating inductively coupled plasma. The ratio of the antenna diameter to the substrate diameter can be from 80% to 120%.

Description

Technical Field

[0001] The present invention relates to a substrate processing device, and more particularly to a plasma enhanced chemical vapor deposition device for depositing high-κ dielectric films by rapidly heating the substrate at high temperatures using heating lamps. Prior Art

[0002] During semiconductor manufacturing, a single-crystal silicon thin film with the same crystal structure as the substrate is deposited on the substrate. During the growth of the single-crystal silicon thin film, an inorganic insulating material, such as silicon oxide, is deposited and patterned to form a single-crystal region only in the silicon-exposed portion of the semiconductor surface. This process is called selective epitaxial growth (SEG).

[0003] Furthermore, when manufacturing thin-film solar cells on large-area substrates, the essential components are a P-type layer that receives sunlight, an I-type layer that forms electron-hole pairs, and an N-type layer that serves as the counter electrode for the P-type layer. Similarly, liquid crystal displays (LCDs) are based on array elements and color filter elements formed on array and color filter substrates, respectively.

[0004] Several lithography processes are required to manufacture thin-film components used in solar cells and liquid crystal display devices. These processes include thin-film deposition, photosensitive layer coating, exposure and development, and etching. Furthermore, these processes are accompanied by various other processes, such as cleaning, bonding, and dicing.

[0005] Plasma enhanced chemical vapor deposition (hereinafter referred to as PECVD) is a process for forming a thin film while exciting a reactive gas into a plasma state within a chamber by applying a radio-frequency (RF) high voltage to an antenna or an electrode.

[0006] Recently, in order to prevent byproducts or particles generated during PECVD from adhering to the inner wall of the chamber, the inner wall is designed with quartz, and the upper and lower dome covers in the upper and lower parts of the chamber are designed with quartz.

[0007] During a deposition process using this type of PECVD, the pressure inside the chamber is maintained at several millitorr (mTorr), and the base vacuum state is maintained at an ultra-high vacuum of 10-9 Torr. This significantly reduces the number of byproducts or particles generated during the deposition process and shortens the deposition process time, thereby improving production yield.

[0008] This plasma enhanced chemical vapor deposition depends on the temperature distribution of the substrate and the characteristics of the plasma. Summary of the Invention

[0009] [Technical Issues]

[0010] One aspect of the present invention provides a plasma-enhanced chemical vapor deposition apparatus having an upper dome and a lower dome. In the plasma-enhanced chemical vapor deposition apparatus, the deposition profile of a high-κ dielectric film is adjusted by adjusting the size of a plasma-generating antenna relative to the diameter of a substrate.

[0011] One aspect of the present invention is to prevent process gas injected into the upper space between the upper dome and the substrate from flowing into the lower space below the susceptor by using the structure of a gasket disposed between the upper dome and the lower dome and the shape of the susceptor.

[0012] [Technical means]

[0013] A substrate processing apparatus includes: a chamber having sidewalls, a base for mounting a substrate within the chamber, an upper dome covering the upper surface of the chamber and formed of a dielectric material, a lower dome covering the lower surface of the chamber and formed of a dielectric material, a liner disposed on the inner side of the chamber and between the upper and lower domes, and an antenna disposed on the upper dome for generating inductively coupled plasma. The ratio of the antenna diameter to the substrate diameter can be 80% to 120%.

[0014] In an exemplary embodiment, the antenna may include two single-turn element antennas. The two single-turn element antennas may be arranged to overlap each other on the upper surface and the lower surface. The two single-turn element antennas may be connected to a radio frequency (RF) power supply in parallel, and the width directions of the single-turn element antennas may stand vertically upward.

[0015] In an exemplary embodiment, the single-turn unit antenna may be in the form of a strip line with a width greater than a thickness. The width direction of the single-turn unit antenna may stand vertically upward, and the ratio of the width W to the thickness t (W / t) may be greater than 10.

[0016] In an exemplary embodiment, each of a pair of single-turn antennas may have one end connected to a pair of vertical power supply lines extending vertically, and the pair of vertical power supply lines may be connected to each other through a horizontal power supply line and then to an RF power source.

[0017] In one exemplary embodiment, the substrate processing apparatus may further include: a clamp disposed so as to contact the upper surface of the chamber and cover the edge of the upper dome; an electromagnetic shield disposed on the clamp so as to surround the antenna; and a ground fixing portion that fixes the other end of each of the pair of single-turn antennas to the electromagnetic shield. The ground fixing portion may extend radially from the upper surface of the single-turn antenna, then extend to the lower surface, and then extend radially from the lower surface again.

[0018] In an exemplary embodiment, the substrate processing apparatus may further include an insulating fixing portion extending parallel to the ground fixing portion and coupled to a lower surface of the single-turn antenna to be fixed to the electromagnetic shielding portion.

[0019] 〔Beneficial Effects〕

[0020] As described above, a substrate processing apparatus according to an exemplary embodiment may be a plasma-enhanced chemical vapor deposition apparatus. In a plasma-enhanced chemical vapor deposition apparatus, the size of the plasma-generating antenna can be adjusted by adjusting the size of the antenna relative to the diameter of the substrate, thereby adjusting the deposition profile based on the antenna size. According to the present invention, an antenna with a diameter greater than the 300 millimeter (mm) diameter of the substrate (having a diameter of 356 mm) achieved a uniformity of 3.1% for HfZrO thin films (HZO thin films). Simple diagram description

[0021] FIG. 1 is an in-situ conceptual diagram of a plasma enhanced chemical vapor deposition apparatus according to one embodiment of the present invention.

[0022] FIG. 2 is a conceptual diagram illustrating a lift position in the plasma enhanced chemical vapor deposition apparatus of FIG. 1 .

[0023] FIG. 3 is a conceptual diagram of the plasma enhanced chemical vapor deposition apparatus of FIG. 1 taken along another direction.

[0024] FIG. 4 is a perspective view of an antenna of the plasma enhanced chemical vapor deposition apparatus of FIG. 1 .

[0025] FIG. 5 is a plan view of the antenna of FIG. 4 viewed toward the upper dome.

[0026] FIG. 6 is a plan view of an antenna according to another embodiment of the present invention. Implementation Method

[0027] To deposit high-κ dielectric films, the substrate must be heated to approximately 300°C. Furthermore, to ensure plasma uniformity or uniform deposition of high-κ dielectric films, conventional attempts have been made to ensure process uniformity by adjusting the chamber dimensions to the dimensions of a fixed antenna. However, changing the chamber dimensions is not suitable for atomic layer deposition processes, which require significantly reduced process volume, and adjusting the chamber dimensions is not efficient in terms of time and cost.

[0028] According to the present invention, process uniformity can be easily ensured by adjusting the antenna dimensions while maintaining a fixed cavity volume. For example, when the antenna diameter is approximately 120% of the substrate size, the uniformity of the high-κ dielectric film reaches 3.1%.

[0029] According to the present invention, a chemical vapor deposition apparatus having an upper dome and a lower dome can use a liner to prevent unnecessary deposition of a thin film on the inner wall of the chamber. The liner can be replaced or cleaned regularly.

[0030] According to an exemplary embodiment, a chemical vapor deposition apparatus having an upper dome and a lower dome can inject process gas into an upper space defined by the upper dome and a susceptor, and exhaust the process gas through an opening in a liner connected to the upper space. When the process gas supplied to the upper space is introduced into the lower space defined by the lower dome and the susceptor, abnormal thin films may be deposited on the lower dome and the liner.

[0031] The gasket according to the present invention may include an upper gasket having a constant inner diameter, a lower gasket continuously connected to the upper gasket and having a constant inclination angle and a gradually increasing inner diameter, and a connecting portion having a bend between the upper gasket and the lower gasket.

[0032] The base according to the present invention may have a thickness of 30 mm or more, and the side surface of the base may have an inclination angle. Furthermore, the pad may have an inclined portion to maintain a constant distance from the inclined side surface of the base.

[0033] When the susceptor is in the processing position (or upper position) to process substrates, it can be raised to the connection portion of the liner. The distance (or gap) between the lower liner and the inclined side of the susceptor can be maintained at 2 mm. This narrow gap provides low conductivity, inhibiting the migration of process gases in the upper space into the lower space.

[0034] A first opening for exhausting process gases and a second opening for substrate entry and exit can be formed in the lower liner and can contact the connecting portion. Therefore, when the susceptor is in the processing position, the inclined side surface of the susceptor can be arranged so that the first opening and the second opening face each other, thereby substantially closing the first opening and the second opening. However, the connecting portion can form a space on the upper side surface of the susceptor, and the connecting portion and the first opening can provide a path for exhausting process gases.

[0035] The susceptor can have a sufficient thickness and a height greater than that of the first opening. In the processing position, the upper surface of the susceptor can be set to be substantially flush with the upper surface of the first opening, and the lower surface of the susceptor can be set to be substantially lower than the lower surface of the first opening. The gap between the inclined side surface of the susceptor and the lower liner can be maintained at a level of 2 mm. Therefore, process gas introduced toward the first opening can be prevented from entering the lower space due to low conductivity.

[0036] The susceptor according to the present invention can have a thickness sufficient to cover the first opening and the inclined side surface, and can prevent process gases injected into the upper space from flowing into the lower space. Consequently, the lower space can suppress the formation of abnormal thin films and particles. Furthermore, the inclined side surface of the susceptor prevents infrared light from entering the upper space, effectively heating the susceptor.

[0037] According to the present invention, the susceptor can be rotated to achieve process uniformity.

[0038] According to the present invention, purge gas can be supplied to the lower dome, and process gas can be supplied to the upper space between the upper dome and the susceptor. This prevents process gas from flowing into the lower dome, thereby suppressing abnormal film deposition on the lower dome.

[0039] According to the present invention, when the susceptor is in the processing position, the upper space can be smaller than the lower space. To this end, the height of the lower liner can be greater than the height of the upper liner. As the upper space is reduced, the deposition rate can be increased.

[0040] In the present invention, the lower gasket can have an inclined surface to spray the purge gas supplied from the lower dome toward the upper dome, and more heating lamps can be installed. Because the gap between the susceptor and the lower gasket can be maintained narrow, the purge gas supplied from the lower dome can be sprayed toward the upper dome to create a pressure difference. Due to the narrow gap between the susceptor and the lower gasket, the process gas injected into the upper space can remain only in the upper space, preventing contamination of the lower space.

[0041] In the present invention, the antenna for inductively coupled plasma can be provided separately from the upper dome. The conductive wires constituting the antenna can be in the form of strip lines, and the strip lines can be vertically aligned along the width direction. Therefore, infrared light incident from the lower dome can be minimized from entering the antenna. Consequently, the antenna can suppress heating caused by infrared light, and infrared light reflected from the electromagnetic shielding portion can significantly reduce shadowing.

[0042] In the present invention, the electromagnetic shielding portion surrounding the antenna and shielding electromagnetic waves can be electroplated with gold, allowing infrared light to be reflected and then re-incident onto the substrate. Furthermore, the electromagnetic shielding portion can have a cylindrical shape rather than a dome shape to mitigate heating of the antenna caused by the re-incident of reflected infrared light.

[0043] In the present invention, the heating lamp disposed under the lower circular cover can be a ring-shaped heating lamp, and can be provided as a plurality of heating lamps. The ring-shaped heating lamps can be grouped together to independently control power supply to uniformly heat the substrate.

[0044] In the present invention, a turbomolecular pump (TMP) connected to the exhaust portion of the chamber allows the interior of the chamber to be maintained at a base vacuum and can generate stable plasma at a pressure of several Torr or lower even during the process.

[0045] The plasma-assisted chemical vapor deposition (PACS) method of the present invention can mitigate the performance degradation of an inductively coupled plasma antenna disposed on an upper dome caused by being heated by infrared light, and can also provide infrared light reflected from the antenna housing back to a substrate, thereby forming a uniform thin film on the substrate at high speed.

[0046] When a heat lamp is used at a process temperature of 300°C, the antenna generating the inductively coupled plasma in the process vessel may be heated by the lamp, and its resistance may increase as the temperature rises. Consequently, the antenna may not generate effective inductively coupled plasma due to energy loss caused by ohmic heating. Furthermore, the antenna may shadow infrared light reflected by the electromagnetic shield, resulting in uneven substrate temperature. To achieve process stability, the electromagnetic shield may be heated to maintain the antenna at a constant temperature while shielding against electromagnetic waves.

[0047] Furthermore, the electromagnetic shielding portion, positioned around the antenna, may reflect a portion of the infrared light emitted by the heating lamp, while the remaining portion may be absorbed by the electromagnetic shielding portion and heated, thereby reducing reliability. Spatially non-uniform temperature distribution within the electromagnetic shielding portion may result in spatially non-uniform blackbody radiation. Therefore, the electromagnetic shielding portion can be heated to a uniform temperature using a resistive heater, thereby providing spatially uniform blackbody radiation. The electromagnetic shielding portion can be heated to a temperature between 200°C and 600°C to reduce heat loss when the electromagnetic shielding portion comes into direct thermal contact with the cavity. Thus, the electromagnetic shielding portion can be thermally insulated from the cavity, significantly reducing heat loss. For example, an insulating spacer can be positioned between the electromagnetic shielding portion and the cavity to reduce heat loss from the electromagnetic shielding portion. The electromagnetic shielding portion can be electrically grounded via an additional conductor. The insulating spacer can have a ring shape and be formed from a ceramic material. The insulating spacer can be formed from a porous ceramic material.

[0048] Below, example embodiments will be described more fully with reference to the accompanying drawings, which illustrate some example embodiments. However, the example embodiments may be implemented in many different forms and should not be construed as limited to the embodiments described herein. Rather, these example embodiments are provided to enable a thorough and complete understanding of the present invention and to fully convey the scope of the example embodiments to those skilled in the art. In the drawings, the thicknesses of layers and regions are exaggerated for clarity. Like characters and / or numbers in the drawings indicate similar elements.

[0049] FIG. 1 is an in-situ conceptual diagram of a plasma enhanced chemical vapor deposition apparatus according to one embodiment of the present invention.

[0050] FIG. 2 is a conceptual diagram illustrating a lift position in the plasma enhanced chemical vapor deposition apparatus of FIG. 1 .

[0051] FIG. 3 is a conceptual diagram of the plasma enhanced chemical vapor deposition apparatus of FIG. 1 taken along another direction.

[0052] FIG. 4 is a perspective view of an antenna of the plasma enhanced chemical vapor deposition apparatus of FIG. 1 .

[0053] FIG. 5 is a plan view of the antenna of FIG. 4 viewed toward the upper dome.

[0054] 1 to 5 , a plasma-enhanced chemical vapor deposition apparatus 100 according to an exemplary embodiment may include a chamber 160 having sidewalls, a susceptor 172 for mounting a substrate within the chamber 160, an upper dome 152 formed of a dielectric material and covering the upper surface of the chamber 160, a lower dome 158 formed of a dielectric material and covering the lower surface of the chamber, a liner 190 disposed on the inner side of the chamber 160 and between the upper dome 152 and the lower dome 158, and an antenna disposed on the upper dome 152 and generating inductively coupled plasma. The ratio of the antenna diameter to the substrate diameter may be 80% to 120%.

[0055] The chamber 160 can be formed of a conductive material and have a cylindrical interior and a cubic exterior. The chamber 160, the upper dome 152, and the lower dome 158 can be coupled to each other to provide a sealed space. The chamber 160 can include a substrate inlet 160a formed on a side surface of the chamber 160 and a drain port 160b formed on a side surface facing the substrate inlet 160a. The drain port 160b can be connected to a low vacuum pump and a high vacuum pump 10. The high vacuum pump 10 can be an annular turbomolecular pump. The high vacuum pump can maintain a low base pressure and can maintain a pressure of several Torr or lower even during processing. The upper surface of the drain port 160b can be positioned higher than the upper surface of the substrate inlet 160a, or the upper surface of the drain port 160b can be positioned at the same level as the upper surface of the substrate inlet 160a.

[0056] For example, when the upper surface of the exhaust port 160b and the upper surface of the substrate inlet 160a are positioned at the same level, the upper surface of the susceptor 172 can be adjusted to the same position as the upper surfaces of the exhaust port 160b and the substrate inlet 160a during the process. This improves the symmetry within the chamber 160 and the flow of process gases, thereby providing uniform thin film deposition.

[0057] When substrate 174 is introduced through substrate inlet 160a formed on a side surface of chamber 160, base 172 can accommodate substrate 174. Base 172 can have a disc shape. Base 172 can have a thickness of 30 mm or greater. Specifically, base 172 can have a thickness of 40 mm or greater. Base 172 can include a curved portion 172b on its upper surface and an inclined side surface 172a continuously connected to curved portion 172b. The first inclination angle of inclined side surface 172a can be 70 degrees. The diameter of substrate 174 can be 300 mm.

[0058] The susceptor 172 and substrate 174 can have the same plate shape and can be formed from ceramic or graphite with improved thermal conductivity. The susceptor 172 can be heated by infrared light incident from below, and the substrate 174 can be heated through heat transfer. During the manufacturing process, the upper surface of the susceptor 172 can be substantially the same as the upper surfaces of the exhaust port 160b and the substrate inlet 160a. The susceptor 172 can be rotated to improve azimuthal symmetry.

[0059] The first lifting member 184 may extend along the central axis of the lower dome 158 and may include a first lifting body having a tripod shape and a first ejector pin. The first lifting member 184 and the second lifting member 182 may have a coaxial structure. When the substrate 174 is transferred into the chamber 160, the first lifting member 184 may be lifted from a lower position or in situ to support the substrate 174. The first lifting member 184 may then be lowered to place the substrate 174 on the base 172. The first lifting member 184 may be made of quartz or metal. The first lifting member 184 may be moved vertically by a drive shaft.

[0060] The second lifting member 182 may extend along the central axis of the lower dome 158 and may include a second lifting body having a tripod shape and a second ejector pin. The second lifting member 182 can lift the susceptor 172, with the substrate 174 mounted thereon, from the home position (or lower position) to the processing position (or upper position). In the processing position, the upper surface of the susceptor 172 can be disposed in the same plane as the upper surface of the second opening 194b for introducing the substrate 174 into the liner 194. Furthermore, in the processing position, the upper surface of the susceptor 172 can be disposed in substantially the same plane as the upper surface of the first opening 194a for exhausting gas from the liner 194. Therefore, the inclined side surface 172a of the susceptor 172 can be configured to close the first opening 194a and the second opening 194b. The material of the second lifting member 182 can be quartz or metal. The second lifting member 182 can be moved vertically by a drive shaft. The second lifting member 182 can be rotated to rotate the susceptor 172.

[0061] Upper dome 152 may comprise sapphire or quartz as a transparent dielectric material. Upper dome 152 may be inserted into and coupled to a raised spot formed on the upper surface of cavity 160. The portion of upper dome 152 that couples to cavity 160 for vacuum sealing may have a gasket shape. Upper dome 152 may have an arcuate or elliptical shape. Upper dome 152 allows infrared light incident from the lower portion to pass through it. Infrared light reflected from electromagnetic shielding portion 130 may pass through upper dome 152 and then be incident on substrate 174.

[0062] The lower dome 158 may comprise sapphire or quartz as a transparent dielectric material. The lower dome 158 may include a funnel-shaped lower dome body 158b, a washer-shaped coupling portion 158a coupled to a raised point formed on the lower surface of the chamber 160, and a cylindrical flow tube 158c connected to the center of the lower dome body 158b. The lower dome 158 may be inserted into and coupled to the raised point formed on the lower surface of the chamber 160. The coupling portion 158, which couples to the chamber 160 to provide a vacuum seal, may have a washer shape. The drive shafts of the first and second lifters 184, 182 may be configured to be inserted into the cylindrical flow tube 158c. The purge gas supplied through the lower dome 158 may be supplied through a flow path. The flow path may be the cylindrical flow tube 158c. The purge gas may be an inert gas such as argon (Ar).

[0063] The liner 190 can be disposed within the chamber 160 and between the upper dome 152 and the lower dome 158. The liner 190 can include an inclined portion 195 having an inclined inner side surface. The second inclination angle of the inclined portion of the liner 190 can be the same as the first inclination angle of the inclined side surface 172a of the base 172. Each of the first and second inclination angles can be 70 degrees. When the first and second inclination angles are the same, the inclined side surface 172a of the base 172 and the inclined portion 195 of the liner 190 can maintain a constant distance. When the susceptor 172 is in the processing position, the inclined side surface 172a of the base 172 and the inclined portion 195 of the liner 190 can maintain a minimum gap of approximately 2 mm.

[0064] The gasket 190 may include an upper gasket 192 having a first inner diameter D1 and positioned adjacent to the upper dome 152, and a lower gasket 194 continuously connected to the upper gasket 192 and having an inclined portion 195 with an increased inner diameter. The lower gasket 194 may include a first opening 194a positioned adjacent to the lower surface of the upper gasket 192 for exhausting gas, and a second opening 194b positioned on the other side of the first opening 194a to provide a path for the substrate. The gasket 190 may further include a connecting portion 196 curved between the upper and lower gaskets. The upper gasket 192 and the lower gasket 194 may be integrally formed. The gasket 190 may include an upper gasket having a constant inner diameter, a connecting portion having a curvature and an increased diameter in the upper gasket, and a lower gasket having a constant inclination angle in the joint portion.

[0065] When the base 172 is in the lower position, the distance between the inclined portion 195 of the lower pad 194 and the inclined side surface 172a of the base 172 may be 7 mm to 13 mm (in detail, at a level of 11 mm).

[0066] When the base 172 is in the upper position, the distance between the inclined side surface 172a of the base 172 and the inclined portion 195 of the gasket 190 can be 1 mm to 3 mm (specifically, 2 mm). This narrow gap reduces the cross-sectional area for fluid flow, providing low conductivity. A base 172 thickness exceeding tens of millimeters can provide low conductivity to the fluid.

[0067] When susceptor 172 is in the upper position, the vertical distance between curved portion 172b of susceptor 172 and liner connection portion 196 can be 4 mm to 7 mm (specifically, 5.7 mm). The outer diameter of the upper surface of susceptor 172 can be substantially the same as inner diameter D1 of upper liner 192, or can be several millimeters larger than inner diameter D1. When susceptor 172 is raised so that the upper surface of susceptor 172 aligns with the upper surface of the first opening, connection portion 196 provides an exhaust path for process gases to be exhausted to the first opening.

[0068] The liner 190 can be formed of a transparent or opaque dielectric material. It can be made of quartz, alumina, sapphire, or aluminum nitride. The liner 190 can be selected from materials that inhibit the deposition of abnormal thin films. If contaminated, the liner 190 can be removed and cleaned. The liner 190 can include an upper liner and a lower liner.

[0069] The upper gasket 192 may have an overall annular shape, and the upper surface of the upper gasket 192 may be a curved surface having the shape of an upper dome. The outer upper surface of the upper gasket 192 may have a flat portion. The inner diameter of the upper gasket 192 may be D1.

[0070] The upper liner 192 may include at least one process gas supply unit 159a that supplies a process gas through a side surface of the upper liner 192. The process gas supply unit 159a may protrude from an inner side surface of the upper liner 192. For example, the process gas supply unit 159a may include a first process gas supply unit 159a that supplies a first process gas, such as SiH4, and a second process gas supply unit 159a that supplies a second process gas.

[0071] The first process gas supply unit 159a can protrude more from the side surface of the upper liner 192, allowing a first process gas, such as SiH₄, to be more exposed to the plasma. The second process gas supply unit 159a can also protrude less from the side surface of the upper liner 192, allowing a second process gas, such as hydrogen (H₂), to be less exposed to the plasma. The purge gas system is introduced into the upper space 12 of the chamber 160 through the lower dome 158 and can evenly supply the purge gas around the circumference, achieving a spatially uniform pressure distribution.

[0072] The connection portion 196 may be a concave structure having a curvature on the lower inner side surface of the upper gasket 192. The curved portion 172b of the base 172 may be spaced apart from the connection portion 196 with a preset gap.

[0073] The lower liner 194 can be disposed within the chamber 160 and has a cylindrical shape surrounding the inner circumference of the upper edge of the lower dome 158. The lower liner 194 can include an inclined lower outer surface 197a for coupling to the lower dome 158, and an inclined portion 195 on the inner side. The inclined lower outer surface 197a can have a flat portion 197 on the outer side. The second inclination angle θ of the inclined portion can be approximately 70 degrees. The lower liner 194 can have a first opening 194a formed on the inner surface adjacent to the upper liner 192 for exhausting gas, and a second opening 194b formed on the other side of the first opening 194a to provide a path for the substrate. The first opening 194a and the second opening 194b can be formed in the inclined portion 195. The first opening 194a can be aligned with the exhaust portion, and the second opening 194b can be aligned with the substrate inlet. When the susceptor 172 is in the upper position, the first opening 194a and the second opening 194b can be substantially closed by the susceptor 172, thereby preventing process gases in the upper space 12 from moving into the lower space 14 defined by the susceptor 172 and the lower dome 158. The first opening 194a, the connecting portion 196, and the curved portion 172b of the susceptor 172 can provide a path through which process gases can flow.

[0074] The insulating portion 162 may be disposed between the lower surface of the cavity 160 and the reflector 161 and may have an annular shape. The insulating portion 162 mitigates heat transfer from the heated reflector 161 to the cavity 160. The insulating portion 162 may be formed of a ceramic material. The upper surface of the insulating portion 162 may have a raised point. The raised point of the insulating portion 162 and the raised point of the lower surface of the cavity 160 accommodate the gasket-shaped coupling portion 158a of the lower dome 158, thereby providing a vacuum seal.

[0075] The concentric heating lamps 166 may include a plurality of concentric and annular heating lamps and may be connected to the power supply 164. The concentric and annular heating lamps may be arranged at regular intervals along the inclined surface of the lower circular cover 158. The concentric and annular heating lamps may be divided into three groups and may receive power independently of each other. The concentric and annular heating lamps may be inserted into an annular groove formed in the inclined surface of the reflector 161 to provide a plurality of concentric and annular heating lamps. are aligned. For example, the concentric heating lamps 166 may be halogen lamps and may include eight lamps. The three bottom lamps may constitute a first group, the two middle lamps may constitute a second group, and the three top lamps may constitute a third group. The first group may be connected to a first power supply 164a, the second group may be connected to a second power supply 164b, and the third group may be connected to a third power supply 164c. The first power supply 164a, the second power supply 164b, and the third power supply 164c may be independently controlled to uniformly heat the substrate.

[0076] Reflector 161 supports the lower surface of insulation 162 and may be mounted with a heater lamp. The inclined surface on which heater lamp 166 is mounted may have a tapered shape to maintain a predetermined distance from the inclined surface of lower dome 158. Reflector 161 may be formed of a conductive material and may be cooled by cooling water.

[0077] The clamp 150 can be positioned to contact the upper surface of the cavity 160 and cover the edge of the upper dome 152. The clamp 150 can be a portion of the cavity 160, performing the same function as the lid of the cavity 150. The clamp 150 can be formed of a conductive material and can be cooled by cooling water. The lower surface of the clamp 150 can include a raised point for coupling to the washer-shaped coupling portion of the upper dome 152, as well as a curved portion 150a that covers a portion of the curved portion of the upper dome 152. The curved portion 150a of the clamp 150 can be plated with gold to reflect infrared light. The inner diameter of the clamp 150 can be substantially the same as, or larger than, the inner diameter D1 of the upper gasket 154. Furthermore, the inner diameter of the clamp 150 can be the same as the diameter of the electromagnetic shielding portion 130. The inner diameter of the electromagnetic shielding portion 130 can be 410 mm.

[0078] Antenna 110 may include two single-turn element antennas 110a and 110b. Multiple antennas 110 may be arranged overlapping each other on the upper and lower surfaces. The single-turn element antennas may be strip-shaped with a width greater than thickness, and the width direction of the single-turn antennas may face vertically upward. The two single-turn element antennas 110a and 110b may be connected in parallel to a radio frequency (RF) power supply 140. RF power supply 140 may supply RF power to antenna 110 via an impedance matching box 142 (IMB) and a power supply line 143. Antenna 110 may include two single-turn element antennas, which may be arranged overlapping each other on the upper and lower surfaces. The two single-turn element antennas may be connected in parallel to the RF power supply 140, and the width direction of the single-turn element antennas may face vertically upward.

[0079] The power supply line 143 can be connected to a T-shaped horizontal power supply line 143a to branch symmetrically. One end of each of the pair of single-turn antennas can be connected to a pair of vertical power supply lines 143b extending perpendicularly. These vertical power supply lines 143b can be connected to each other via the horizontal power supply line 143a and then to the RF power supply 140. The pair of vertical power supply lines 143b can be installed through the electromagnetic shielding portion 130. The horizontal power supply line 143a can be installed outside the electromagnetic shielding portion 130.

[0080] Antennas, through which RF current flows, must have a sufficient cross-sectional area to handle high currents and form a closed loop to generate sufficient magnetic flux. Furthermore, multiple turns are required to ensure sufficient magnetic flux or high inductance. Therefore, a stacked structure is necessary. However, antennas with a vertical width occupy a large space and are not conducive to ensuring sufficient magnetic properties, so they have traditionally been avoided.

[0081] In the present invention, antenna 110 may use vertically standing strip lines so that ultraviolet light incident from the upper or lower portion of antenna 110 is absorbed, significantly reducing the increase in resistance caused by heating. Antenna 110 can provide high transmittance with respect to infrared light.

[0082] Furthermore, the antenna can be coated with gold (Au) or silver (Ag) to increase infrared light reflection. Furthermore, an antenna with a two-layer structure can be used to ensure sufficient magnetic flux. In a single-turn element antenna, the location supplied with RF power can be located on the upper surface to reduce power loss caused by capacitive coupling. The aspect ratio of the strip line (the ratio of width W to thickness t (W / t)) can be 10 or greater. The strip line can have a thickness of several millimeters and a width of several centimeters. Because the standing strip line structure does not hinder the flow formed by the introduction of air, the standing strip line structure can provide smooth air cooling. Furthermore, infrared light reflected from the electromagnetic shielding portion can significantly reduce the shadow formed by the antenna.

[0083] The lower surface of antenna 110 can be substantially coplanar with the upper surface of clamp 150 and can be higher than the highest point of upper dome 152. Therefore, antenna 110 does not directly contact upper dome 152, preventing it from being directly heated by heat transfer. The two single-turn element antennas 110a and 110b can be rotated 180 degrees to overlap each other. Each of the single-turn element antennas 110a and 110b can be positioned on the lower surface for a predetermined portion and on the upper surface for another portion.

[0084] The single-turn unit antenna 110a / 110b may include a radial portion 112a / 112b connected to a vertical power supply line 143b and extending from the upper surface by rotating 90 degrees clockwise along a circle having a first radius R1; a first vertical extension portion 114a / 114b that changes the placement plane from the upper surface to the lower surface in the first curved portion; a second curved portion 115a / 115b that rotates 180 degrees clockwise along a circle having the first radius R1 in the first vertical extension portion; a second vertical extension portion 116a / 116b that is continuously connected to the second curved portion, changes the radius from the first radius R1 to a second radius R2 smaller than the first radius R1, changes the placement plane from the lower surface to the upper surface, and changes the radius from the second radius R2 to the first radius R1; and a third curved portion 117a / 117b that extends from the upper surface by rotating 90 degrees clockwise along a circle having the first radius R1 from the second vertical extension portion. The third curved portion 117a / 117b may be connected to a ground portion 118 extending in a radial direction. The third radius of the circle connecting the pair of vertical power supply lines 143b may be R3. The third radius R3 may be smaller than the second radius R2. The pair of vertical power supply lines 143b may extend through the upper surface of the electromagnetic shield 130.

[0085] A grounding fixture 119 can secure the other end of each of the pair of single-turn antennas to the electromagnetic shield. Grounding fixture 119 can be electrically connected to grounding fixture 118 and can be connected to electromagnetic shield 130 by changing the placement plane to the lower surface of the antenna. Grounding fixture 119 can be formed of a conductive material and can be electrically connected to electromagnetic shield 130. Grounding fixture 119 can extend radially from the upper surface of the single-turn antenna, then to the lower surface, and then again radially from the lower surface. Third curved portion 117a / 117b can include grounding fixture 118 extending in one direction, and one end of grounding fixture 119 can be screwed to grounding fixture 118. Grounding fixture 119 and the antenna can have the same strip-shaped structure. The other end of grounding fixture 119 can be bent in the azimuth direction to be inserted into the inner surface of electromagnetic shield 130 and can be screwed to electromagnetic shield 130. The ground fixing portion 119 may provide a symmetrical structure while reducing parasitic inductance in the bent structure.

[0086] The insulating fixing portion 18 may extend radially parallel to the ground fixing portion 119 and may be coupled to the lower surface of the single-turn antenna to be fixed to the electromagnetic shielding portion 130. The insulating fixing portion 18 may provide mechanical stability to the antenna 110. The insulating fixing portion 18 may be formed of a dielectric material such as ceramic or plastic. One end of the insulating fixing portion 18 may be bent in the azimuth direction and screwed to the second bent portions 115a, 115b, while the other end of the insulating fixing portion 18 may be bent in the azimuth direction to be inserted into the inner surface of the electromagnetic shielding portion 130 and screwed to the electromagnetic shielding portion 130.

[0087] The electromagnetic shielding portion 130 can be mounted on the clamp 150 and positioned to surround the antenna 110. The inner surface of the electromagnetic shielding portion 130 can be coated with gold (Au). The electromagnetic shielding portion 130 can shield electromagnetic waves emitted from the antenna 110 and reflect infrared light emitted from the heating lamp. The electromagnetic shielding portion 130 can be heated by a heater incorporated therein. The temperature of the electromagnetic shielding portion 130 can be between 200°C and 600°C. The electromagnetic shielding portion 130 can shield electromagnetic waves emitted by the antenna 110. The electromagnetic shielding portion 130 can be formed of a conductive material and can be heated by a heater embedded therein. The electromagnetic shielding portion 130 can be grounded via an additional wire.

[0088] The inner diameter of electromagnetic shielding portion 130 can be 410 mm, the outer diameter distance between antenna 110 and electromagnetic shielding portion 130 can be 27 mm, and the vertical distance between antenna 110 and electromagnetic shielding portion 130 can be 15 mm. The diameter of the antenna can be 356 mm. The inner diameter of electromagnetic shielding portion 130 can be substantially the same as the inner diameter of clamp 150. For example, when the distance between antenna 110 and electromagnetic shielding portion 130 along the outer diameter is 27 mm, film uniformity can be significantly increased to 3.1%.

[0089] The insulating spacer 339 can thermally insulate the electromagnetic shielding portion 130 and the upper surface of the cavity 160. The insulating spacer 339 can have a ring-shaped shape formed of a ceramic material. The insulating spacer 339 can be covered with a wire mesh gasket. The wire mesh gasket can significantly reduce heat transfer while electrically connecting the electromagnetic shielding portion 130 and the clamp 150.

[0090] The cooling housing 132 can be disposed separately from the electromagnetic shielding portion 130 while surrounding the electromagnetic shielding portion 130. The cooling housing 132 can have a flow path therein and can be cooled by a refrigerant. The cooling housing 132 can be formed of a conductive material and mounted on the clamp 150. The cooling housing 132 can block radiant heat generated by the electromagnetic shielding portion 130 to prevent damage to external components.

[0091] A cooling housing 132 may be disposed on the clamp 150 to surround the electromagnetic shielding portion 130. The cooling housing 132 may include a flow path 132a for injecting air into and exhausting air from the electromagnetic shielding portion 130. The air injected into the electromagnetic shielding portion 130 may cool the antenna 110 and the upper dome 152.

[0092] FIG. 6 is a plan view of an antenna according to another embodiment of the present invention.

[0093] 6, the antenna 110' may include two single-turn unit antennas 110a and 110b. The single-turn unit antennas 110a, 110b may include a first curved single portion 113a, 113b connected to a vertical power supply line 143b and extending from the upper surface by rotating clockwise along a circle having a first radius R1; a first vertical extension portion 114a, 114b that changes the placement plane from the upper surface to the lower surface in the first curved portion; a second curved portion 115a, 115b that rotates 180 degrees clockwise along a circle having a first radius R1 in the first vertical extension portion; a second vertical extension portion 116a, 116b that is continuously connected to the second curved portion, changes the radius from the first radius R1 to a second radius R2 smaller than the first radius R1, and changes the radius from the second radius R1 to the first radius R1; and a third curved portion 117a, 117b that extends from the upper surface by rotating 90 degrees clockwise along a circle having the first radius R1 in the second vertical extension portion. The third curved portions 117a and 117b may be connected to a ground portion 118 extending in a radial direction. The radius of the circle connecting the pair of vertical power supply lines 143b may be R2. The pair of vertical power supply lines 143b may extend through the upper surface of the electromagnetic shield portion 130.

[0094] The inner diameter of electromagnetic shielding portion 130 can be 410 mm. The distance between the electromagnetic shielding portion and the antenna along the outer diameter can be 76 mm, and the vertical distance between the antenna and electromagnetic shielding portion 130 can be 15 mm. The diameter of the antenna can be 258 mm. The inner diameter of electromagnetic shielding portion 130 can be substantially the same as the inner diameter of the clamp.

[0095] The following describes experimental results illustrating the HZO deposition thickness distribution for a plasma-enhanced chemical vapor deposition apparatus including an antenna having a diameter of 356 mm according to an exemplary embodiment. The HZO deposition thickness profile, depending on wafer position, was investigated under various process conditions.

[0096] Referring to Figure 1 , the antenna has a diameter of 356 mm. The ratio of the antenna diameter to the substrate diameter is approximately 118%. The inner diameter of the electromagnetic shielding portion 130 is 410 mm, the outer diameter distance between the antenna and the electromagnetic shielding portion is 27 mm, and the vertical distance between the antenna and the electromagnetic shielding portion is 15 mm. The inner diameter of the electromagnetic shielding portion 130 can be substantially the same as the inner diameter of the clamp. The substrate is heated to 320 degrees Celsius by a heating lamp. The power supplied to the antenna for inductively coupled plasma is 1000 watts (W). The thin film is an HZO atomic layer deposition film with alternating deposition of HfO and ZrO. The process is performed at pressures of 9 mTorr and 80 mTorr. The deposition rate shows azimuthal symmetry at pressures between 9 mTorr and 80 mTorr.

[0097] At 9 mTorr, the uniformity was 7.53%. In this case, the deposition rate was higher at the edges of the substrate. However, at 80 mTorr, the deposition rate was higher at the center of the substrate and slightly increased at the edges. Therefore, the uniformity was 3.1%, an improved result. When the pressure was adjusted to approximately 80 mTorr, the uniformity could be fine-tuned. The inventors attribute this improved uniformity to the diameter of the antenna.

[0098] Hereinafter, experimental results illustrating the HZO deposition thickness distribution of a plasma-enhanced chemical vapor deposition apparatus including an antenna having a diameter of 258 mm according to an example embodiment will be described.

[0099] Referring to Figure 6 , the antenna has a diameter of 258 mm. The ratio of the antenna diameter to the substrate diameter is approximately 86%. The inner diameter of the electromagnetic shielding portion 130 is 410 mm, the outer diameter distance between the antenna and the electromagnetic shielding portion is 76 mm, and the vertical distance between the antenna and the electromagnetic shielding portion is 15 mm. The inner diameter of the electromagnetic shielding portion 130 can be substantially the same as the inner diameter of the clamp. The substrate is heated to 320 degrees Celsius by a heating lamp. The power supplied to the antenna for inductively coupled plasma is 1000 W. The thin film is an HZO atomic layer deposition film, which alternates HfO and ZrO. The process is performed at a hydrogen plasma gas pressure of 9 mTorr. The deposition rate shows azimuthal symmetry at a pressure of 9 mTorr.

[0100] At 9 mTorr, the uniformity was 13.22%. In this case, the deposition rate was slightly higher at the edge of the substrate.

[0101] The following describes experimental results illustrating the HZO deposition thickness distribution of a plasma-enhanced chemical vapor deposition apparatus including an antenna having a diameter of 298 mm, according to an exemplary embodiment. The antenna diameter is 298 mm. The ratio of the antenna diameter to the substrate diameter is approximately 99%.

[0102] The inner diameter of the electromagnetic shielding portion 130 is 410 mm. The inner diameter of the electromagnetic shielding portion 130 may be substantially the same as the inner diameter of the clamp.

[0103] The substrate was heated to 320°C by a heating lamp. The power supplied to the antenna for inductively coupled plasma was 1000 W. The thin film was an HZO atomic layer deposition film, alternating between HfO and ZrO deposition. The process was performed at pressures of 9 mTorr and 50 mTorr. The deposition rate at 9 mTorr showed azimuthal symmetry. However, the deposition rate at 50 mTorr did not show azimuthal symmetry, with a higher deposition rate in the 12 o'clock direction.

[0104] At 9 mTorr, the uniformity was 10.95%. In this case, the deposition rate was slightly higher at the edges of the substrate.

[0105] At 50 mTorr, the uniformity was 16.05%. In this case, the deposition rate was slightly higher at the edge of the substrate.

[0106] According to experimental results, azimuthal symmetry and a high deposition uniformity of 3.1% were achieved when the antenna diameter was 356 mm. For example, when the ratio of the antenna diameter to the substrate diameter was approximately 120%, deposition uniformity as high as 3% was achieved for semiconductor device fabrication.

[0107] The physical mechanism behind the high deposition uniformity of HZO high-κ dielectric films when the antenna diameter is 356 mm is explained as follows. Because the electromagnetic shield and the strip-shaped antenna are sufficiently close (i.e., at a distance of 27 mm), a portion of the antenna's RF power leaks into the electromagnetic shield rather than being used to generate the inductively coupled plasma. This can be explained by the change in the time-varying magnetic field generated by the antenna, altering the spatial distribution of the induced electric field. This can be explained by the fact that, at pressures exceeding tens of millitorr, the plasma density at the substrate edge decreases relative to the center, improving overall deposition uniformity. For example, in atomic layer deposition processes, film deposition uniformity is more important than the deposition rate.

[0108] Although the present invention and its advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the scope and spirit of the invention as defined by the following claims.

[0109] 10: High vacuum pump 100: Plasma enhanced chemical vapor deposition equipment 110,110': Antenna 110a, 110b: Single-turn element antenna 113a, 113b, 115a, 115b, 117a, 117b: curved single part 114a, 114b, 116a, 116b: vertical extension 118: Grounding part 119: Grounding fixed part 12: Upper space 130:Electromagnetic shielding part 132: Cooling shell 132a: Flow path 14: Lower space 140:RF power supply 142: Impedance matching box 143,143a,143b: Power supply lines 150: Clamp 150a: curved portion 152: Upper dome 158: lower round cover 158a: coupling portion 158b: Lower round cover body 158c: Flow tube 159a: Process gas supply unit 160: Cavity 160a:Substrate entrance 160b: discharge port 161:Reflector 162: Insulation part 164,164a,164b,164c: Power supply 166:Heating lamp 172: Base 172a: inclined side 172b: curved part 174:Substrate 18: Insulation fixing part 182,184: Lifting parts 190:Padding 192: Upper pad 194: Lower pad 194a,194b: opening 195: inclined part 196:Connection 197: Flat part 197a: inclined lower outer surface 339: Insulation spacer D1:Inner diameter IMB: Impedance Matching Box R1, R2, R3: radius TMP: Turbomolecular Pump

Claims

1. A substrate processing apparatus, comprising: a cavity having a side wall; a base for mounting a substrate inside the cavity; an upper dome covering an upper surface of the cavity and formed of a dielectric material; a lower dome covering a lower surface of the cavity and formed of a dielectric material; a gasket disposed on the inner side of the cavity and between the upper and lower domes; and an antenna disposed on the upper dome and generating inductively coupled plasma, wherein the substrate processing apparatus further comprises: a clamp disposed in contact with the upper surface of the cavity and covering an edge of the upper dome; an electromagnetic shielding portion disposed on the clamp and arranged to surround the antenna; and a thermally insulating spacer disposed between the electromagnetic shielding portion and the cavity to reduce heat loss of the electromagnetic shielding portion, wherein... The electromagnetic shielding portion shields electromagnetic waves emitted from the antenna and reflects infrared light emitted from a heating lamp disposed under the lower dome. The electromagnetic shielding portion is heated by a heater embedded therein. The ratio of the diameter of the antenna to the diameter of the substrate is 80% to 120%.

2. A substrate processing apparatus, comprising: a cavity having a side wall; a base for mounting a substrate inside the cavity; an upper circular cover covering an upper surface of the cavity and formed of a dielectric material; a lower circular cover covering a lower surface of the cavity and formed of a dielectric material; a gasket disposed on the inner side of the cavity and between the upper and lower circular covers; and an antenna disposed on the upper circular cover and generating inductively coupled plasma, wherein... The antenna has a diameter that is 80% to 120% of the diameter of the substrate. The antenna comprises two single-turn antennas that are arranged to overlap each other on an upper and lower surface. The two single-turn antennas are connected in parallel to a radio frequency (RF) power supply, and each of the two single-turn antennas stands vertically upward in a width direction. An RF power supply can supply the RF power to the antenna through an impedance matching box and a power supply line. The power supply line can be connected to a T-shaped horizontal power supply line that branches symmetrically. One end of each of the pair of single-turn antennas is connected to a pair of vertically extending vertical power supply lines. The pair of vertical power supply lines are connected to each other through the horizontal power supply line and then connected to the RF power supply. The horizontal power supply line is located outside the electromagnetic shielding portion.

3. The substrate processing apparatus as described in claim 2, wherein: Each of the two single-turn element antennas is a strip-shaped line with a width greater than a thickness, and the ratio of the width W to the thickness t (W / t) is greater than 10.

4. A substrate processing apparatus, comprising: a cavity having a side wall; a base for mounting a substrate inside the cavity; an upper circular cover covering an upper surface of the cavity and formed of a dielectric material; a lower circular cover covering a lower surface of the cavity and formed of a dielectric material; a gasket disposed on the inner side of the cavity and between the upper and lower circular covers; and an antenna disposed on the upper circular cover and generating inductively coupled plasma, wherein... The antenna has a diameter that is 80% to 120% of the diameter of the substrate, wherein the base includes a curved portion that is bent on an upper surface of the base and an inclined side that is continuously connected to the curved portion.

5. A substrate processing apparatus, comprising: a cavity having a side wall; a base for mounting a substrate inside the cavity; an upper circular cover covering an upper surface of the cavity and formed of a dielectric material; a lower circular cover covering a lower surface of the cavity and formed of a dielectric material; a gasket disposed on the inner side of the cavity and between the upper and lower circular covers; and an antenna disposed on the upper circular cover and generating inductively coupled plasma, wherein... The antenna's diameter is 80% to 120% of the substrate's diameter. A grounding fixing portion fixes one end of each of the two single-turn unit antennas to the electromagnetic shielding portion. The grounding fixing portion extends radially from the upper surface of each of the two single-turn unit antennas, then to the lower surface, and then again radially from the lower surface. The electromagnetic shielding portion has an inner diameter of 410 mm, the antenna has a diameter of 356 mm, and the vertical distance between the antenna and the electromagnetic shielding portion is 15 mm. The substrate has a thin film that is an HZO atomic layer deposition film for alternating deposition of HfO and ZrO.

6. A substrate processing apparatus, comprising: a cavity having a side wall; a base for mounting a substrate inside the cavity; an upper circular cover covering an upper surface of the cavity and formed of a dielectric material; a lower circular cover covering a lower surface of the cavity and formed of a dielectric material; a gasket disposed on the inner side of the cavity and between the upper and lower circular covers; and an antenna disposed on the upper circular cover and generating inductively coupled plasma, wherein... The antenna's diameter is 80% to 120% of the diameter of its substrate, which is a thin film of HZO atomic layer deposition film for alternating deposition of HfO and ZrO, and a deposition rate exhibits symmetry in the azimuth direction at a pressure of 9 mTorr to 80 mTorr.

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