Composition for forming organic film, method for forming organic film, and patterning process

Abstract

[Problem] To provide an organic film forming composition that exhibits excellent film-forming properties (in-plane uniformity) and filling characteristics on a substrate (wafer) and suppresses bulging during the EBR process, an organic film forming method using the composition, and a patterning method. [Solution] An organic film forming composition, characterized in that it comprises an organic film forming resin, a polymer, and a solvent, wherein the polymer comprises a structural unit represented by general formula (I), and comprises at least one of the structural units represented by general formula (II) and general formula (III), wherein the structural unit represented by general formula (I) and at least one of the structural units represented by general formula (II) and general formula (III) form a random copolymer, and the fluorine content of the polymer is 5% to 16% by mass.

Description

Composition for forming organic film, method for forming organic film, and method for forming pattern The present invention relates to a composition for forming an organic film for a multilayer resist used for fine processing in manufacturing a semiconductor device or the like, an organic film for planarization in manufacturing a semiconductor device or the like, an organic film forming method using the composition, and a pattern forming method using the aforementioned composition. In recent years, with the high integration and high speed of semiconductor elements, finer pattern rules have been sought. In this case, in lithography using optical exposure, which is currently used as a general technology, various technical developments have been made on how to perform finer and higher-precision pattern processing for the light source used. As a light source for lithography used in forming a resist pattern, in parts with low integration, optical exposure using g-ray (436 nm) or i-ray (365 nm) of a mercury lamp as a light source is widely used. On the other hand, in parts with high integration that require finer patterns, lithography using a shorter wavelength KrF excimer laser (248 nm) or ArF excimer laser (193 nm) has also been put into practical use. Furthermore, in the most advanced generations that require finer patterns, lithography based on extreme ultraviolet (EUV, 13.5 nm) is also approaching practical use. When thinning the resist pattern in this way, in the single-layer resist method, which is a typical resist pattern forming method, it is known that the ratio of the pattern height to the pattern line width (aspect ratio) becomes larger, and pattern collapse occurs due to the surface tension of the developer during development. Therefore, in order to form a pattern with a high aspect ratio on a substrate with height differences, the multilayer resist method of forming a pattern by stacking film layers with different dry etching characteristics is known to be excellent, and the following methods have been developed: a two-layer resist method (Patent Document 1) in which a photoresist layer obtained from a silicon-containing photosensitive polymer is combined with a lower layer formed from an organic polymer having carbon, hydrogen, and oxygen as main constituent elements, such as a novolak-based polymer; a three-layer resist method (Patent Document 2) in which a photoresist layer formed from an organic photosensitive polymer used in the single-layer resist method, an intermediate layer formed from a silicon-based polymer or a silicon-based CVD film, and a lower layer formed from an organic polymer are combined. In the three-layer resist method, for example, an organic film formed of novolak or the like is uniformly formed as a resist lower layer film on a substrate to be processed, a silicon-containing film is formed thereon as a resist intermediate film, and a normal organic photoresist film is formed thereon as a resist upper layer film. For dry etching based on fluorine-based gas plasma, the organic resist upper layer film exhibits a good etching selectivity with respect to the silicon-containing resist intermediate film. Therefore, by using dry etching based on fluorine-based gas plasma, the resist pattern is transferred to the silicon-containing resist intermediate film. According to this method, even if a resist composition that is difficult to form a pattern with a sufficient film thickness for processing the substrate to be processed or a resist composition with insufficient dry etching resistance for the substrate to be processed is directly used, a pattern can be transferred to the silicon-containing film. If pattern transfer is then performed using dry etching based on oxygen-based gas plasma, a pattern of a novolak film with sufficient dry etching resistance for processing can be obtained. Regarding the organic lower layer film as described above, various techniques are already known (for example, Patent Document 3). With the development of miniaturization in recent years, the necessity of excellent filling characteristics has gradually increased on the basis of dry etching characteristics. There is a need for an organic lower layer film material that can uniformly form a film on the substrate to be processed with a complex shape and material and has filling characteristics that can fill the necessary pattern without voids. The organic lower layer film as described above is formed using a coater / developer that can perform processes such as a spin coating process, an EBR process, and a baking process when manufacturing a semiconductor substrate or the like. The EBR (Edge Bead Removal) process refers to a process in which after forming a coating film on a substrate (wafer) by spin coating, for the purpose of preventing contamination of the substrate transfer arm of the coater / developer, the coating film at the end of the substrate is removed using a remover. As the remover used in the EBR process, a mixed solution of propylene glycol monomethyl ether acetate and propylene glycol monomethyl ether (30 mass%: 70 mass%) is widely used in the EBR processes of the resist film, the silicon-containing intermediate film, and the organic lower layer film. Due to the influence of the remover in the EBR process, the outer peripheral portion of the organic lower layer film sometimes forms a state with a relatively thick film thickness (bulge). In the dry etching process during the above substrate processing, the bulge becomes a cause of defects. Therefore, an organic lower layer film with suppressed bulge is sought. [Prior Art Documents] [Patent Documents] [Patent Document 1] Japanese Patent Application Laid-Open No. 6-118651 [Patent Document 2] Japanese Patent No. 4355943 [Patent Document 3] Japanese Patent Application Laid-Open No. 2004-205685 [Problems to be Solved by the Invention] The present invention has been made in view of the above circumstances, and an object thereof is to provide a composition for forming an organic film having excellent film-forming properties (in-plane uniformity) and filling properties on a substrate (wafer) and suppressing swelling during the EBR process, an organic film-forming method using the composition, and a patterning method. [Means for Solving the Problems] In order to achieve the above object, in the present invention, there is provided a composition for forming an organic film, which is characterized in that it contains a resin for forming an organic film, a polymer, and a solvent, the polymer contains a structural unit represented by the following general formula (I), and contains at least one of a structural unit represented by the following general formula (II) and a structural unit represented by the following general formula (III), at least one of the structural unit represented by the following general formula (II) and the structural unit represented by the following general formula (III) forms a random copolymer with the structural unit represented by the above general formula (I), and the fluorine content of the polymer is 5% by mass to 16% by mass. (In the formula, R 1 is a hydrogen atom or an alkyl group having 1 to 20 carbon atoms; R 2 is a sulfonyl group having 1 to 20 carbon atoms having a fluorine atom and an organic group without an amino group.) (In the formula, R 3 is a hydrogen atom or an alkyl group having 1 to 20 carbon atoms; R 4 and R 5 are each independently an optionally linear or branched divalent alkylene group having 1 to 4 carbon atoms; R 6 is a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group; m1 is 0 to 23; n1 is 0 to 23; 23 ≥ m1 + n1 ≥ 2.) (In the formula, R 7 and R 8 are each a hydrogen atom or an alkyl group having 1 to 20 carbon atoms; R 9 and R 10 are each independently an optionally linear or branched divalent alkylene group having 1 to 4 carbon atoms; m2 is 0 to 23; n2 is 0 to 23; 23 ≥ m2 + n2 ≥ 2.) With such a composition for forming an organic film, an organic film having excellent in-plane uniformity and filling properties and suppressing swelling due to the influence of the remover in the EBR process can be formed. In addition, it is preferable that R of the structural unit represented by the general formula (I) of the polymer 2 A composition for forming an organic film containing a structure represented by the following general formula (IV) or (V). (In the formula, * represents the bonding position.) If it is a composition for forming an organic film containing such a polymer, the in-plane uniformity of the formed organic film is more excellent, so it is preferred. In addition, a composition for forming an organic film in which the resin for forming the organic film described above is preferably a resin having an aromatic skeleton is preferred. If it is such a resin having an aromatic skeleton, the etching resistance, optical properties, heat resistance, etc. are more excellent, so it is preferred. In addition, it is preferred that the resin for forming the organic film described above is 100 parts by mass, and the content of the polymer is 0.01 part by mass to 5 parts by mass in the composition for forming an organic film. If it is a composition for forming an organic film containing the polymer in such a content, the in-plane uniformity of the formed organic film is more excellent, so it is preferred. In addition, it is preferred that the composition for forming an organic film described above is 100 parts by mass, and the content of the resin for forming the organic film described above is 10 parts by mass to 40 parts by mass in the composition for forming an organic film. In the case of the content of the resin for forming the organic film, the composition for forming the organic film can have excellent in-plane uniformity and filling characteristics, and therefore, it can be suitably used. If it is an organic film forming composition as described above, the effects of the present invention are fully exhibited. In addition, in the present invention, there is provided an organic film forming method, which is a method for forming an organic film used in the manufacturing process of a semiconductor device, wherein the above-mentioned composition for forming an organic film is spin-coated on a substrate to be processed, and the substrate coated with the composition for forming an organic film is heat-treated at a temperature of 100°C to 600°C for a range of 10 seconds to 600 seconds to form a cured film. According to the organic film forming method of the present invention, it is possible to fill a pattern with a complex shape on a substrate to be processed by spin-coating the above-mentioned composition for forming an organic film and form an organic film with excellent in-plane uniformity. The organic film obtained by the above method can suppress swelling in the EBR process and remove the organic film at the end, so it is preferred. In addition, in the present invention, there is provided a pattern forming method, which forms an organic film on a workpiece using the above-described composition for forming an organic film, forms a resist intermediate film on the organic film using a resist intermediate film material containing a silicon atom, forms a resist upper film on the resist intermediate film using a resist upper film material formed from a photoresist composition, forms a circuit pattern on the resist upper film, uses the resist upper film having the circuit pattern as a mask, transfers the pattern to the aforementioned resist intermediate film by etching, uses the resist intermediate film having the transferred pattern as a mask, transfers the pattern to the aforementioned organic film by etching, and further uses the organic film having the transferred pattern as a mask to transfer the pattern to the aforementioned workpiece by etching. In this way, it is possible to provide a pattern forming method based on a three-layer resist process using the composition for forming an organic film, a silicon-containing resist intermediate film, and a resist upper film of the present invention. If it is such a pattern forming method of the present invention, it is possible to transfer and form the circuit pattern of the resist upper film on the workpiece with high precision. In addition, in the present invention, there is provided a pattern forming method, which forms an organic film on a workpiece using the above-described composition for forming an organic film, forms a resist intermediate film on the organic film using a resist intermediate film material containing a silicon atom, forms an organic antireflection film or a conformal film on the resist intermediate film, forms a resist upper film on the organic antireflection film or the conformal film using a resist upper film material formed from a photoresist composition, forms a circuit pattern on the resist upper film, uses the resist upper film having the circuit pattern as a mask, transfers the pattern to the aforementioned organic antireflection film or conformal film and the aforementioned resist intermediate film by etching, uses the resist intermediate film having the transferred pattern as a mask, transfers the pattern to the aforementioned organic film by etching, and further uses the organic film having the transferred pattern as a mask to transfer the pattern to the aforementioned workpiece by etching. In this way, it is possible to provide a pattern forming method based on a four-layer resist process using the composition for forming an organic film, a silicon-containing resist intermediate film, an organic antireflection film or a conformal film, and a resist upper film of the present invention. If it is such a pattern forming method of the present invention, it is possible to transfer and form the circuit pattern of the resist upper film on the workpiece with high precision. In addition, in the present invention, there is provided a pattern forming method, which forms an organic film on a workpiece using the above-described composition for forming an organic film, forms an inorganic hard mask selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on the organic film, forms a resist upper film on the inorganic hard mask using a resist upper film material formed from a photoresist composition, forms a circuit pattern on the resist upper film, uses the resist upper film having the circuit pattern as a mask, transfers the pattern to the aforementioned inorganic hard mask by etching, uses the inorganic hard mask having the transferred pattern as a mask, transfers the pattern to the aforementioned organic film by etching, and further uses the organic film having the transferred pattern as a mask to transfer the pattern to the aforementioned workpiece by etching. In this way, a pattern formation method based on a three-layer resist process using the composition for forming an organic film, an inorganic hard mask, and an upper resist film of the present invention can be provided. If it is such a pattern formation method of the present invention, a circuit pattern of the upper resist film can be transferred and formed on the object to be processed with high precision. In addition, in the present invention, a pattern formation method is provided, which forms an organic film on an object to be processed using the above composition for forming an organic film, forms an inorganic hard mask selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on the organic film, forms an organic antireflection film or a conformal film on the inorganic hard mask, forms an upper resist film on the organic antireflection film or the conformal film using an upper resist film material formed of a photoresist composition, forms a circuit pattern on the upper resist film, uses the upper resist film having the circuit pattern as a mask, transfers the pattern to the organic antireflection film or the conformal film and the inorganic hard mask by etching, uses the inorganic hard mask having the transferred pattern as a mask, transfers the pattern to the organic film by etching, and further uses the organic film having the transferred pattern as a mask, and transfers the pattern to the object to be processed by etching. In this way, a pattern formation method based on a four-layer resist process using the composition for forming an organic film, an inorganic hard mask, an organic antireflection film or a conformal film, and an upper resist film of the present invention can be provided. If it is such a pattern formation method of the present invention, a circuit pattern of the upper resist film can be transferred and formed on the object to be processed with high precision. In addition, it is preferable to form the inorganic hard mask by CVD method or ALD method. In the pattern formation method of the present invention, an inorganic hard mask can be formed by such a method, for example. In addition, in the formation of the circuit pattern, it is preferable to form the circuit pattern by lithography using light having a wavelength of 10 nm or more and 300 nm or less, direct drawing based on an electron beam, nanoimprinting, or a combination thereof. In addition, in the formation of the circuit pattern, it is preferable to develop the circuit pattern with an alkali developer or an organic solvent. In the pattern formation method of the present invention, such a circuit pattern formation means and development means can be suitably used. In addition, the object to be processed is preferably a semiconductor device substrate or an object to be processed having a metal film, a metal carbide film, a metal oxide film, a metal nitride film, a metal oxycarbide film, or a metal oxynitride film formed on the semiconductor device substrate. In addition, the metal constituting the object to be processed is preferably silicon, titanium, tungsten, hafnium, zirconium, chromium, germanium, copper, silver, gold, aluminum, indium, gallium, arsenic, palladium, iron, tantalum, iridium, molybdenum, or an alloy thereof. If it is the pattern formation method of the present invention, the object to be processed as described above can be processed to form a pattern. [Effects of the Invention] As described above, in the case of the present invention, it is possible to provide a composition for forming an organic film that has excellent film-forming properties (in-plane uniformity) and filling properties on a substrate (wafer) and suppresses swelling during the EBR process. In addition, the composition for forming an organic film of the present invention has excellent film-forming properties and filling properties, and excellent suppression of swelling during the EBR process. Therefore, it is extremely useful as an organic film material used in a multilayer resist process such as a two-layer resist process, a three-layer resist process using a silicon-containing resist intermediate film or an inorganic hard mask, or a four-layer resist process using a silicon-containing resist intermediate film or an inorganic hard mask and an organic antireflective film or a conformal film, or as a composition for forming an organic film for manufacturing a semiconductor device. Further, in the case of the method for forming an organic film of the present invention, an organic film with suppressed swelling can be formed, and thus, semiconductor elements and the like can be efficiently manufactured. As described above, there is a demand for the development of a composition for forming an organic film that has excellent film-forming properties (in-plane uniformity) and filling properties on a substrate (wafer) and suppresses swelling during the EBR process. Generally, when forming an organic film, a composition is prepared by dissolving a resin for forming an organic film and additives in an organic solvent, and the composition is coated on a substrate having a structure, wiring, etc. using a coater / developer. The composition is spread by rotating the substrate, and the composition at the end is removed by the EBR process, and then calcined to form an organic film. It is considered that if the fluidity of the above composition is insufficient, voids will be generated when filling holes and grooves with a very high aspect ratio, and when the resin for forming an organic film and additives have poor solubility in the remover used in the EBR process, swelling will occur at the outer periphery of the organic film. The inventors of the present invention further反复深入研究 and found that by blending the following substances into the composition for forming an organic film, a composition for forming an organic film with excellent film-forming properties, high filling properties, and suppression of swelling during the EBR process can be provided, and thus the present invention was completed. The substance is a composition for forming an organic film, which contains a resin for forming an organic film, a polymer, and a solvent. The polymer contains a structural unit represented by the following general formula (I), and contains at least one of a structural unit represented by the following general formula (II) and a structural unit represented by the following general formula (III). At least one of the structural unit represented by the following general formula (II) and the structural unit represented by the following general formula (III) forms a random copolymer with the structural unit represented by the above general formula (I), and the fluorine content of the polymer is 5% by mass to 16% by mass. (In the formula, R 1 is a hydrogen atom or an alkyl group having 1 to 20 carbon atoms; R 2 is a sulfonyl group having 1 to 20 carbon atoms with a fluorine atom and an organic group without an amino group.) (In the formula, R 3 is a hydrogen atom or an alkyl group having 1 to 20 carbon atoms; R 4 and R 5 are each independently a divalent alkylene group having 1 to 4 carbon atoms which may be linear or branched; R 6 is a hydrogen atom, an alkyl group having 1 to 4 carbon atoms or a phenyl group; m1 is 0 to 23; n1 is 0 to 23; 23 ≥ m1 + n1 ≥ 2.) (In the formula, R 7 and R 8 are a hydrogen atom or an alkyl group having 1 to 20 carbon atoms; R 9 and R 10 are each independently a divalent alkylene group having 1 to 4 carbon atoms which may be linear or branched; m2 is 0 to 23; n2 is 0 to 23; 23 ≥ m2 + n2 ≥ 2.) That is, the present invention is a composition for forming an organic film, characterized in that it contains a resin for forming an organic film, a polymer and a solvent, the polymer contains a structural unit represented by the following general formula (I), and contains at least one of a structural unit represented by the following general formula (II) and a structural unit represented by the following general formula (III), at least one of the structural unit represented by the following general formula (II) and the structural unit represented by the following general formula (III) forms a random copolymer with the structural unit represented by the aforementioned general formula (I), and the fluorine content of the aforementioned polymer is 5% by mass to 16% by mass. (In the formula, R 1 is a hydrogen atom or an alkyl group having 1 to 20 carbon atoms; R 2 is a sulfonyl group having 1 to 20 carbon atoms with a fluorine atom and an organic group without an amino group.) (In the formula, R 3 is a hydrogen atom or an alkyl group having 1 to 20 carbon atoms; R 4 and R 5 are each independently a divalent alkylene group having 1 to 4 carbon atoms which may be linear or branched; R 6 is a hydrogen atom, an alkyl group having 1 to 4 carbon atoms or a phenyl group; m1 is 0 to 23; n1 is 0 to 23; 23 ≥ m1 + n1 ≥ 2.) (In the formula, R 7 and R 8 is a hydrogen atom or an alkyl group having 1 to 20 carbon atoms; R 9 and R 10 are each independently a divalent alkylene group having 1 to 4 carbon atoms which may be linear or branched; m2 is 0 to 23; n2 is 0 to 23; 23 ≥ m2 + n2 ≥ 2.) It should be noted that the fluorine content of the polymer used in the present invention is calculated based on the mass ratio of fluorine atoms to the total amount of raw material monomers used. Hereinafter, the present invention will be described in detail, but the present invention is not limited thereto. [Composition for forming organic film] The composition for forming an organic film of the present invention is characterized in that it contains a resin for forming an organic film, a polymer, and a solvent, the polymer contains a structural unit represented by the following general formula (I), and contains at least one of a structural unit represented by the following general formula (II) and a structural unit represented by the following general formula (III), and at least one of the structural unit represented by the following general formula (II) and the structural unit represented by the following general formula (III) forms a random copolymer with the structural unit represented by the aforementioned general formula (I), and the fluorine content of the aforementioned polymer is 5% by mass to 16% by mass. (In the formula, R 1 is a hydrogen atom or an alkyl group having 1 to 20 carbon atoms; R 2 is a sulfonyl group having 1 to 20 carbon atoms with a fluorine atom and an organic group without an amino group.) (In the formula, R 3 is a hydrogen atom or an alkyl group having 1 to 20 carbon atoms; R 4 and R 5 are each independently a divalent alkylene group having 1 to 4 carbon atoms which may be linear or branched; R 6 is a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group; m1 is 0 to 23; n1 is 0 to 23; 23 ≥ m1 + n1 ≥ 2.) (In the formula, R 7 and R 8 is a hydrogen atom or an alkyl group having 1 to 20 carbon atoms; R 9 and R 10 are each independently a divalent alkylene group having 1 to 4 carbon atoms which is optionally linear or branched; m2 is 0 to 23; n2 is 0 to 23; 23 ≥ m2 + n2 ≥ 2.) It should be noted that in the composition for forming an organic film of the present invention, the aforementioned resin for forming an organic film, the aforementioned polymer, and the solvent may each be used alone or in combination of two or more. [A polymer containing a structural unit represented by the general formula (I) and at least one of a structural unit represented by the general formula (II) and a structural unit represented by the general formula (III), at least one of the structural unit represented by the general formula (II) and the structural unit represented by the general formula (III) forms a random copolymer with the structural unit represented by the general formula (I), and the fluorine content of the aforementioned polymer is 5% by mass to 16% by mass] The composition for forming an organic film of the present invention contains a polymer, the polymer contains a structural unit represented by the general formula (I), and contains at least one of a structural unit represented by the general formula (II) and a structural unit represented by the general formula (III), at least one of the structural unit represented by the general formula (II) and the structural unit represented by the general formula (III) forms a random copolymer with the structural unit represented by the general formula (I), and the fluorine content of the aforementioned polymer is 5% by mass to 16% by mass. Polymerization of these structural units in a manner to form a random copolymer is for excellent compatibility with the resin for forming an organic film and the solvent. It is considered that: the polymer is excellent in flexibility by containing an oxyalkylene group, and the aggregation state of the polymer is controlled by setting the fluorine content in an appropriate range, thereby improving the fluidity of the composition for forming an organic film and having excellent filling characteristics. Furthermore, the polymer is excellent in solubility in the removal liquid in the EBR process, so swelling can be suppressed. In addition, the surface tension is reduced by containing fluorine, and the in-plane uniformity of the composition for forming an organic film is also improved. As the upper limit of the aforementioned fluorine content, it is 16% by mass, and from the viewpoint of suppressing swelling, it is preferably 14% by mass, and further, from the viewpoint of filling characteristics, it is most preferably 12% by mass. From the viewpoint of in-plane uniformity, as the lower limit of the aforementioned fluorine content, it is 5% by mass, and preferably 7% by mass. The above R 1 represents a hydrogen atom or an alkyl group having 1 to 20 carbon atoms. As the alkyl group having 1 to 20 carbon atoms, specifically, methyl, ethyl, propyl, isopropyl, n-butyl, secondary butyl, tertiary butyl, isobutyl, pentyl, cyclopentyl, hexyl, cyclohexyl, decyl can be exemplified. Among them, a hydrogen atom and a methyl group are more preferred. The above R 2It is a sulfonyl group having 1 to 20 carbon atoms with a fluorine atom and an organic group without an amino group. Here, in the present invention, "organic group" means a group containing at least 1 carbon, further containing hydrogen, and optionally containing nitrogen, oxygen, sulfur, silicon, halogen atoms, etc. It is preferably an organic group having 1 to 20 carbon atoms with a fluorine atom, and the substituent having a fluorine atom is more preferably an organic group having 1 to 20 carbon atoms represented by the following general formula (IV) or (V). (In the formula, * represents the bonding position.) R 2 The reason for not containing a sulfonyl group and an amino group is that the polarity increases due to these structures, and the types of preferred solvents are limited. By being a polymer containing such a structure, a composition for forming an organic film has the characteristics of reduced surface tension and excellent compatibility of the polymer in a solvent. Therefore, an organic film with more excellent in-plane uniformity can be formed by spin coating. As the structural unit represented by the above general formula (I), more specifically, the following structural units can be exemplified, but are not limited to them. As described above, among them, a perfluoroalkyl group having 3 or 4 carbon atoms is preferred. The above R 3 represents a hydrogen atom or an alkyl group having 1 to 20 carbon atoms. As the alkyl group having 1 to 20 carbon atoms, specifically, methyl, ethyl, propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, pentyl, cyclopentyl, hexyl, cyclohexyl, decyl can be exemplified. Among them, a hydrogen atom and a methyl group are more preferred. The above R 4 and R 5 each represent a divalent alkylene group having 1 to 4 carbon atoms which may be linear or branched. As the divalent alkylene group having 1 to 4 carbon atoms which may be linear or branched, specifically, methylene, ethylene, propylene, butylene, trimethylene, tetramethylene can be exemplified. Among these, from the viewpoint of filling properties, ethylene is more preferred. (R 4 O) and (R 5 O) can be arranged randomly, in blocks, or in multi-blocks. The above R 6 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms or a phenyl group. As the alkyl group having 1 to 4 carbon atoms, specifically, methyl, ethyl, propyl, isopropyl, allyl, n-butyl, sec-butyl, tert-butyl, isobutyl can be exemplified. Among these, a hydrogen atom, a methyl group or an ethyl group, and a phenyl group are more preferred. The above m1 ranges from 0 to 23, n1 ranges from 0 to 23, and 23 ≥ m1 + n1 ≥ 2. The m1 and n1 mentioned here represent the average repetition numbers. The upper limit of m1 + n2 is 23, and from the viewpoint of low-temperature storage stability, it is more preferably 13. As the structural unit represented by the above general formula (II), more specifically, the following structural units can be exemplified, but are not limited thereto. The above R 7 and R 8 represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms. As the alkyl group having 1 to 20 carbon atoms, specifically, methyl, ethyl, propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, pentyl, cyclopentyl, hexyl, cyclohexyl, and decyl can be exemplified. Among them, a hydrogen atom and a methyl group are more preferred. The above R 9 and R 10 each represent an optionally straight-chain or branched divalent alkylene group having 1 to 4 carbon atoms. As the optionally straight-chain or branched divalent alkylene group having 1 to 4 carbon atoms, specifically, methylene, ethylene, propylene, butylene, trimethylene, and tetramethylene can be exemplified. Among these, ethylene is more preferred. (R 9 O) and (R 10 O) can be arranged randomly or in blocks. The above m2 ranges from 0 to 23, n2 ranges from 0 to 23, and 23 ≥ m2 + n2 ≥ 2. The m2 and n2 mentioned here represent the average repetition numbers. The upper limit of m2 + n2 is 23, and from the viewpoint of low-temperature storage stability, it is more preferably 13. As the structural unit represented by the above general formula (III), more specifically, the following structural units can be exemplified, but are not limited thereto. The aforementioned polymer can be synthesized by polymerizing at least one monomer selected from the monomers providing the structural unit represented by the general formula (I), the monomers providing the structural unit represented by the general formula (II), and the monomers providing the structural unit represented by the general formula (III) in a mixing ratio such that the structural units become a specified content ratio according to the structure of each polymer by using a known method. In addition, for the aforementioned polymer, one or more of the monomers providing the structural unit represented by the general formula (I), the monomers providing the structural unit represented by the general formula (II), and the monomers providing the structural unit represented by the general formula (III) can be used separately or in combination of two or more. By combining multiple structural units, the structure becomes complex, which can suppress the aggregation of the aforementioned polymer and appropriately adjust the solvent solubility. The aforementioned polymer can be obtained by polymerizing polymerizable monomers using known methods, and at least one of the structural unit represented by the general formula (II) and the structural unit represented by the general formula (III) is polymerized with the structural unit represented by the general formula (I) to form a random copolymer. When obtaining the polymer, by polymerizing each monomer protected by a protecting group as needed and then performing a deprotection reaction as needed, the polymer can also be synthesized. As the reaction method for obtaining the polymer, there is no particular limitation, and methods such as radical polymerization and cationic polymerization can be used, and appropriately selected according to the reactivity of the monomers, etc. In the case of using radical polymerization, there is the following method: mixing monomers having a polymerizable unsaturated bond, adding a radical initiator in a solvent and performing heat polymerization, whereby a polymer can be obtained. The polymerization conditions can be variously selected according to the monomers used, the target molecular weight, etc. Specifically, as the solvent used in the polymerization, examples include toluene, benzene, tetrahydrofuran, diethyl ether, dioxane, 2-butanone, methyl isobutyl ketone, propylene glycol monomethyl ether acetate, cyclohexanone, γ-butyrolactone, ethyl acetate, and butyl acetate. As the polymerization initiator, examples include 2,2'-azobisisobutyronitrile (AIBN), 2,2'-azobis(2,4-dimethylvaleronitrile), dimethyl-2,2-azobis(2-methylpropionate), benzoyl peroxide, lauroyl peroxide, etc. In addition, during the polymerization, as a chain transfer agent, mercaptans such as octanethiol and 2-mercaptoethanol can be added. The polymerization reaction is preferably carried out by heating to 40 °C to the boiling point of the reaction solvent. As the reaction time, it is 0.5 to 100 hours, preferably 1 to 48 hours. In the case of using cationic polymerization, there is the following method: mixing monomers having a polymerizable unsaturated bond, adding a cationic polymerization initiator and performing polymerization, whereby a polymer can be obtained. The polymerization conditions can be variously selected according to the monomers used, the target molecular weight, etc. Specifically, as the solvent used in the polymerization, examples include hexane, heptane, octane, toluene, dichloromethane, 1,2-dichloroethane, ethyl ether, butyl ether, etc. As the catalyst used as a cationic polymerization initiator, acids such as sulfuric acid, perchloric acid, trifluoroacetic acid, methanesulfonic acid, trifluoromethanesulfonic acid, chlorosulfonic acid, and fluorosulfonic acid, and Lewis acids such as boron trifluoride, aluminum chloride, titanium tetrachloride, tin chloride, and iron chloride can be used. When a Lewis acid is used as the catalyst, if there is a proton source such as an acid, water, or alcohol in an amount of the same molar degree as the catalyst, the cationic polymerization activity is increased, so it can be added. The polymerization reaction is not particularly limited as long as it is a temperature at which the reaction proceeds, and it is preferably carried out by heating to -10 °C to the boiling point of the reaction solvent. As the reaction time, it is 0.5 to 100 hours, preferably 1 to 48 hours. The weight average molecular weight (Mw) of the aforementioned polymer is preferably from 1,000 to 30,000, more preferably from 2,000 to 20,000, and still more preferably from 3,000 to 15,000. If Mw is 1,000 or more, excellent in-plane uniformity is exhibited. On the other hand, if Mw is 30,000 or less, coating defects due to insufficient solubility in the solvent can be suppressed. In addition, the molecular weight distribution (Mw / Mn) is preferably from 1.0 to 3.0, more preferably from 1.0 to 2.0. It should be noted that in the present invention, Mw and the molecular weight distribution are polystyrene conversion measurement values based on gel permeation chromatography (GPC) using tetrahydrofuran (THF) as a solvent. The compounding amount of the aforementioned polymer is preferably from 0.01 to 5 parts by mass, more preferably from 0.1 to 3 parts by mass, and particularly preferably from 0.5 to 2 parts by mass with respect to 100 parts by mass of the resin for forming an organic film. If the compounding amount of the aforementioned polymer is 0.01 part by mass or more, the compounding effect is sufficiently obtained. In addition, since the polymer decomposes due to heat during calcination, the in-plane uniformity and filling characteristics deteriorate, and if it is in the range of 5 parts by mass or less, it can be suitably used. [Resin for forming an organic film] The resin for forming an organic film that can be used in the organic film composition of the present invention is not particularly limited as long as it is a compound containing a resin that satisfies the film-forming property and curability of spin coating, and is more preferably a compound containing an aromatic skeleton from the viewpoints of etching resistance, optical properties, heat resistance, etc. Examples of the above aromatic skeleton include benzene, naphthalene, anthracene, pyrene, indene, fluorene, furan, pyrrole, thiophene, phosphole, pyrazole, oxazole, isoxazole, thiazole, pyridine, pyridazine, pyrimidine, pyrimidine, triazine, carbazole, and the like. Among these, benzene, naphthalene, fluorene, and carbazole are particularly preferred. Examples of the resin for forming an organic film applied in the present invention include resins having the following structures described in JP-A-2012-1687 and JP-A-2012-77295. (In formula (1), the ring structures Ar1 and Ar2 represent a benzene ring or a naphthalene ring. X represents a single bond or an alkylene group having 1 to 20 carbon atoms. m represents 0 or 1. n represents any natural number such that the molecular weight becomes 100,000 or less. It should be noted that the symbols in the formula are applied only in that formula.) (In formula (2), the ring structures Ar1 and Ar2 represent a benzene ring or a naphthalene ring. n represents any natural number such that the polystyrene conversion weight average molecular weight based on gel permeation chromatography becomes 100,000 or less. It should be noted that the symbols in the formula are applied only in that formula.) Examples of the resin for forming an organic film used in the present invention further include resins having the following structures described in JP-A-2004-264710, JP-A-2005-043471, JP-A-2005-250434, JP-A-2007-293294, and JP-A-2008-65303. (In Formula (3) and Formula (4), R 1 and R 2 represent a hydrogen atom or an alkyl group or aryl group having 1 to 3 carbon atoms, and R 3 represents an alkyl group having 1 to 3 carbon atoms, a vinyl group, an allyl group, or an optionally substituted aryl group, n represents 0 or 1, and m represents 0, 1, or 2. It should be noted that the symbols in the formula are only applicable in that formula.) (In Formula (5), R 1 is a monovalent atom or group other than a hydrogen atom, and n is an integer from 0 to 4. Among them, when n is 2 to 4, a plurality of R 1 are optionally the same or different. R 2 and R 3 are independently a monovalent atom or group. X is a divalent group. It should be noted that the symbols in the formula are only applicable in that formula.) (In Formula (6), R 1 is a hydrogen atom or a methyl group. R 2 is any one of a single bond, a linear, branched, or cyclic alkylene group having 1 to 20 carbon atoms, and an arylene group having 6 to 10 carbon atoms, optionally having any one of an ether, an ester, a lactone, and an amide. R 3 and R 4 are each a hydrogen atom or a glycidyl group. X represents an arbitrary polymer of a hydrocarbon containing an indene skeleton, a cycloolefin having 3 to 10 carbon atoms, and maleimide, optionally having any one of an ether, an ester, a lactone, and a carboxylic anhydride. R 5 and R 6 are each any one of a hydrogen atom, a fluorine atom, a methyl group, and a trifluoromethyl group. R 7is any one of a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms, a hydroxyl group, and an alkoxycarbonyl group. p and q are each an integer of 1 to 4. r is an integer of 0 to 4. a, b, and c are in the ranges of 0.5 ≤ a + b + c ≤ 1, 0 ≤ a ≤ 0.8, 0 ≤ b ≤ 0.8, 0.1 ≤ a + b ≤ 0.8, and 0.1 ≤ c ≤ 0.8. It should be noted that the symbols in the formula are only applicable in that formula.) (In formula (7), R 1 represents a hydrogen atom or a monovalent organic group, and R 2 and R 3 each independently represent a monovalent atom or a monovalent organic group. It should be noted that the symbols in the formula are only applicable in that formula.) As the resin for forming an organic film used in the present invention, specifically, resins having the following structures described in JP-A-2004-205685, JP-A-2007-171895, and JP-A-2009-14816 can be exemplified, etc. (In formula (8) and formula (9), R 1 ~R 8 each independently is a hydrogen atom, a hydroxyl group, an optionally substituted alkyl group having 1 to 6 carbon atoms, an optionally substituted alkoxy group having 1 to 6 carbon atoms, an optionally substituted alkoxycarbonyl group having 2 to 6 carbon atoms, an optionally substituted aryl group having 6 to 10 carbon atoms, a hydroxyalkyl group having 1 to 6 carbon atoms, an isocyanate group, or a glycidyl group. m and n are positive integers. It should be noted that the symbols in the formula are only applicable in that formula.) (In formula (10), R 1 , R 6 is a hydrogen atom or a methyl group. R 2 , R 3 , R 4 is a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an alkoxy group, a hydroxyl group, an acetoxy group, or an alkoxycarbonyl group, or an aryl group having 6 to 10 carbon atoms, and R 5 is a condensed polycyclic hydrocarbon group having 13 to 30 carbon atoms, -O-R 7 , -C(=O)-O-R 7 , -O-C(=O)-R 7 or -C(=O)-NR 8 -R 7 , m is 1 or 2, n is an integer from 0 to 4, and p is an integer from 0 to 6. R 7 is an organic group having 7 to 30 carbon atoms, and R 8 is a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms. Z is any one of methylene, -O-, -S-, -NH-. a, b, c, d, e are respectively in the ranges of 0 < a < 1.0, 0 ≤ b ≤ 0.8, 0 ≤ c ≤ 0.8, 0 ≤ d ≤ 0.8, 0 ≤ e ≤ 0.8, and 0 < b + c + d + e < 1.0. It should be noted that the symbols in the formula are only applicable in this formula.) (In formula (11), n represents 0 or 1. R 1 represents an optionally substituted methylene group, an optionally substituted alkylene group having 2 to 20 carbon atoms, or an optionally substituted arylene group having 6 to 20 carbon atoms. R 2 represents a hydrogen atom, an optionally substituted alkyl group having 1 to 20 carbon atoms, or an optionally substituted aryl group having 6 to 20 carbon atoms. R 3 ~R 7 represents a hydroxyl group, an optionally substituted alkyl group having 1 to 6 carbon atoms, an optionally substituted alkoxy group having 1 to 6 carbon atoms, an optionally substituted alkoxycarbonyl group having 2 to 10 carbon atoms, an optionally substituted aryl group having 6 to 14 carbon atoms, or an optionally substituted glycidyl ether group having 2 to 6 carbon atoms. R 9 represents a hydrogen atom, a linear, branched, or cyclic alkyl group having 1 to 10 carbon atoms, a linear, branched, or cyclic alkyl ether group having 1 to 10 carbon atoms, or an aryl group having 6 to 10 carbon atoms. It should be noted that the symbols in the formula are only applicable in this formula.) Compounds such as the following can be exemplified. As the resin for forming an organic film used in the present invention, resins having the following structures described in JP-A-2007-199653, JP-A-2008-274250, and JP-A-2010-122656 can be exemplified, etc. (In formula (12), R 1 and R 2Independently being the same or different types of hydrogen atoms, linear, branched, or cyclic alkyl groups having 1 to 10 carbon atoms, aryl groups having 6 to 10 carbon atoms, or alkenyl groups having 2 to 10 carbon atoms, R 3 Is a single bond, or an alkylene group having a linear, branched, or cyclic structure with 1 to 30 carbon atoms, optionally having a bridged hydrocarbon group, a double bond, a heteroatom, or an aromatic group having 6 to 30 carbon atoms, R 4 And R 5 Are each independently a hydrogen atom or a glycidyl group, and n is an integer from 1 to 4. It should be noted that the symbols in the formula are only applicable in this formula.) (In formula (13), R 1 And R 2 Independently being the same or different types of hydrogen atoms, linear, branched, or cyclic alkyl groups having 1 to 10 carbon atoms, aryl groups having 6 to 10 carbon atoms, or alkenyl groups having 2 to 10 carbon atoms, R 3 Is a single bond, or an alkylene group having a linear, branched, or cyclic structure with 1 to 30 carbon atoms, optionally having a bridged hydrocarbon group, a double bond, a heteroatom, or an aromatic group having 6 to 30 carbon atoms, R 4 And R 5 Are each independently a hydrogen atom or a glycidyl group, and R 6 Is a single bond, or a linear or branched alkylene group having 1 to 10 carbon atoms. It should be noted that the symbols in the formula are only applicable in this formula.) (In formula (14), ring Z 1 And ring Z 2 Represent condensed polycyclic aromatic hydrocarbon rings, and R 1a , R 1b , R 2a And R 2b Are the same or different and represent substituents. k1 and k2 are the same or different and represent 0 or an integer from 1 to 4, m1 and m2 are each 0 or an integer of 1 or more, and n1 and n2 each represent 0 or an integer of 1 or more. Among them, n1 + n2 ≥ 1. It should be noted that the symbols in the formula are only applicable in this formula.) (In formula (15), R 1 , R 2 is a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, or an alkenyl group having 2 to 10 carbon atoms, which are the same or different. R 3 , R 4 are each a hydrogen atom or a glycidyl group, and R 5 is a single bond, a linear or branched alkylene group having 1 to 10 carbon atoms, and R 6 , R 7 is a benzene ring or a naphthalene ring. p and q are each 1 or 2. n is 0 < n ≤ 1. It should be noted that the symbols in the formula are only applicable in that formula.) Compounds such as the following can be exemplified. As the resin for forming an organic film used in the present invention, resins having the following structures described in JP-A-2012-214720 and the like can be exemplified. (In formula (16), the ring structures Ar1 and Ar2 represent a benzene ring or a naphthalene ring. x and z each independently represent 0 or 1. It should be noted that the symbols in the formula are only applicable in that formula.) As the resin for forming an organic film used in the present invention, resins described in JP-A-2014-29435, International Publication WO2012 / 077640, International Publication WO2010 / 147155 and the like can be exemplified. (In formula (17), A represents a structure having a carbazole, B represents a structure having an aromatic ring, C represents a hydrogen atom, an alkyl group or a structure having an aromatic ring, and B and C optionally form a ring with each other. In the structure incorporating A, B and C, there are 1 to 4 carboxyl groups or their salts or carboxylic acid ester groups. It should be noted that the symbols in the formula are only applicable in that formula.) In addition, a polymer described in International Publication WO2012 / 077640, which contains a unit structure represented by the following formula (18) and a unit structure represented by the following formula (19), and the ratio of the unit structure represented by formula (18) to the unit structure represented by formula (19) is 3 to 97:97 to 3 in terms of molar ratio, can be exemplified. (In formula (18), R 1 and R 2Each independently represents a hydrogen atom, a halogen atom, a nitro group, an amino group, a hydroxyl group, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an aryl group having 6 to 40 carbon atoms, or a combination of these groups optionally containing an ether bond, a ketone bond or an ester bond. R 3 represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an aryl group having 6 to 40 carbon atoms, or a combination of these groups optionally containing an ether bond, a ketone bond or an ester bond. R 4 represents a hydrogen atom, or an aryl group or a heterocyclic group having 6 to 40 carbon atoms optionally substituted with a halogen atom, a nitro group, an amino group or a hydroxyl group, R 5 represents a hydrogen atom, or an alkyl group having 1 to 10 carbon atoms, an aryl group or a heterocyclic group having 6 to 40 carbon atoms optionally substituted with a halogen atom, a nitro group, an amino group or a hydroxyl group, R 4 and R 5 optionally form a ring with each other. n1 and n2 each represent an integer from 1 to 3. It should be noted that the symbols in the formula are only applicable in that formula.) (In formula (19), Ar represents an aromatic ring group having 6 to 20 carbon atoms, R 6 represents a hydroxyl group, R 7 represents a hydrogen atom, a halogen atom, a nitro group, an amino group, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an aryl group having 6 to 40 carbon atoms, or a combination of these groups optionally containing an ether bond, a ketone bond or an ester bond. R 8 represents a hydrogen atom, or an aryl group or a heterocyclic group having 6 to 40 carbon atoms optionally substituted with a halogen atom, a nitro group, an amino group or a hydroxyl group, R 9 represents a hydrogen atom, or an alkyl group having 1 to 10 carbon atoms, an aryl group or a heterocyclic group having 6 to 40 carbon atoms optionally substituted with a halogen atom, a nitro group, an amino group or a hydroxyl group, R 8 and R 9 optionally form a ring with each other. n6 represents an integer from 1 to p, and n7 represents an integer of p - n6. Here, p represents the maximum number that can be substituted on the aromatic ring group Ar. It should be noted that the symbols in the formula are only applicable in that formula.) As the resin for forming an organic film used in the present invention, a polymer containing a unit structure represented by the following formula (20) described in International Publication WO2010 / 147155 can be exemplified. (In formula (20), R 1 and R 2 each independently represent a group selected from the group consisting of a hydrogen atom, a halogen group, a nitro group, an amino group, a hydroxyl group, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an aryl group having 6 to 40 carbon atoms, and combinations thereof, and the alkyl group, the alkenyl group, or the aryl group optionally contains an ether bond, a ketone bond, or an ester bond, R 3 represents a group selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an aryl group having 6 to 40 carbon atoms, and combinations thereof, and the alkyl group, the alkenyl group, or the aryl group optionally contains an ether bond, a ketone bond, or an ester bond, R 4 represents an aryl group or a heterocyclic group having 6 to 40 carbon atoms optionally substituted with a halogen group, a nitro group, an amino group, or a hydroxyl group, R 5 represents a hydrogen atom, or an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 40 carbon atoms, or a heterocyclic group optionally substituted with a halogen group, a nitro group, an amino group, or a hydroxyl group, and, R 4 and R 5 optionally form a ring together with the carbon atom to which they are bonded, and n1 and n2 are each an integer of 1 to 3. It should be noted that the symbols in the formula are only applicable in that formula.) As the resin for forming an organic film used in the present invention, there can be exemplified a novolak resin obtained by reacting one or more of phenols such as phenol, cresol, xylenol, catechol, resorcinol, hydroquinone, pyrogallol, phloroglucinol, and phloroglucinol with one or more of aldehyde sources such as formaldehyde, paraformaldehyde, and trioxane using an acidic catalyst; resins including a repeating unit structure represented by the following formula (21) described in International Publication WO2012 / 176767, etc. (In formula (21), A represents a hydroxyl-substituted phenylene group derived from polyhydroxybenzene, and B represents a monovalent fused aromatic hydrocarbon ring group formed by fusing 2 to 6 benzene rings. It should be noted that the symbols in the formula are only applicable in that formula.) As the resin for forming an organic film used in the present invention, there can be exemplified novolak resins having a fluorene or tetrahydrospirobifluorene structure described in Japanese Patent Application Laid-Open No. 2005-128509, Japanese Patent Application Laid-Open No. 2006-259249, Japanese Patent Application Laid-Open No. 2006-259482, Japanese Patent Application Laid-Open No. 2006-293298, and Japanese Patent Application Laid-Open No. 2007-316282, resins including a repeating unit structure represented by the following formula (22-1) or (22-2), etc. (In Formulas (22-1) and (22-2), R 1 and R 2 and R 6 and R 7 are independently a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an allyl group or a halogen atom, and R 3 and R 4 and R 8 and R 9 are independently a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms, a linear, branched or cyclic alkenyl group having 2 to 6 carbon atoms, an aryl group having 6 to 10 carbon atoms or a glycidyl group, and R 5 and R 14 are independently a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms. n, m, p, and q are integers from 1 to 3. R 10 to R 13 are independently a hydrogen atom, a halogen atom, a hydroxyl group, a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms or a linear, branched or cyclic alkoxy group having 1 to 6 carbon atoms. It should be noted that the symbols in the formula are only applicable in that formula.) As the resin for forming an organic film used in the present invention, a reactant obtained by the method described in Japanese Unexamined Patent Application Publication No. 2012-145897 can be exemplified. More specifically, a polymer obtained by condensing one or more compounds represented by the following general formula (23-1) and / or (23-2) with one or more compounds represented by the following general formula (24-1) and / or (24-2) and / or their equivalents can be exemplified. (In Formulas (23-1) and (23-2), R 1 to R 8Each independently is a hydrogen atom, a halogen atom, a hydroxyl group, an isocyanato group, a glycidyloxy group, a carboxyl group, an amino group, an alkoxy group having 1 to 30 carbon atoms, an alkoxycarbonyl group having 1 to 30 carbon atoms, an alkanoyloxy group having 1 to 30 carbon atoms, an optionally substituted saturated or unsaturated organic group having 1 to 30 carbon atoms. Further, two substituents optionally selected from R 1 ~R 4 or R 5 ~R 8 optionally bond to each other to further form a cyclic substituent. It should be noted that the symbols in the formula are only applied in this formula.) (In Formula (24-1) and Formula (24-2), Q is an optionally substituted organic group having 1 to 30 carbon atoms. Further, two Qs optionally selected in the molecule optionally bond to each other to form a cyclic substituent. n1 to n6 are the numbers of each substituent, n1 to n6 = 0, 1, 2, and Formula (24-1) does not include hydroxybenzaldehyde. In addition, in Formula (24-2), the relationship of 0 ≤ n3 + n5 ≤ 3, 0 ≤ n4 + n6 ≤ 4, 1 ≤ n3 + n4 ≤ 4 is satisfied. It should be noted that the symbols in the formula are only applied in this formula.) In addition, polymers obtained by condensing one or more compounds represented by the above general formula (23-1) and / or (23-2) with one or more compounds represented by the above general formula (24-1) and / or (24-2) and / or their equivalents with one or more compounds represented by the following general formula (25) and / or their equivalents can be exemplified. (In Formula (25), Y is a hydrogen atom or a monovalent organic group having 30 or less carbon atoms optionally having a substituent, and Formula (25) is different from Formula (24-1) and Formula (24-2). It should be noted that the symbols in the formula are only applied in this formula.) As the resin for forming an organic film used in the present invention, resins having the following structure described in JP-A-2017-119671 can be exemplified. (In Formula (26-1), R is a single bond or an organic group having 1 to 50 carbon atoms, X is a group represented by the following general formula (26-2), and m1 is an integer satisfying 2 ≤ m1 ≤ 10. It should be noted that the symbols in the formula are only applied in this formula.) (In the formula, X 2 is a divalent organic group having 1 to 10 carbon atoms, n1 is 0 or 1, n2 is 1 or 2, X 3It is a group represented by the following general formula (26-3), and n5 is 0, 1 or 2. It should be noted that the symbols in the formula are only applicable in this formula.) (In the formula, R 10 is a hydrogen atom or a saturated or unsaturated hydrocarbon group having 1 to 10 carbon atoms, and the hydrogen atoms on the benzene ring in the formula are optionally substituted with a methyl group or a methoxy group. It should be noted that the symbols in the formula are only applicable in this formula.) Compounds such as the following can be exemplified. As the resin for forming an organic film used in the present invention, polymers having repeating units represented by the following general formula (27-1) described in Japanese Patent Laid-Open No. 2019-44022 can be exemplified, etc. (In formula (27-1), AR1 and AR2 are a benzene ring or a naphthalene ring optionally having a substituent, and R 1 , R 2 are each independently a hydrogen atom or an organic group having 1 to 30 carbon atoms. When R 1 and R 2 are organic groups, R 1 and R 2 optionally form a cyclic organic group by bonding within the molecule. n is 0 or 1. When n = 0, AR1 and AR2 are not separated by Z, and the aromatic rings of AR1 and AR2 do not form a bridging structure with each other. When n = 1, AR1 and AR2 are separated by Z, and the aromatic rings of AR1 and AR2 form a bridging structure with each other. Z is a single bond or any one of the following formula (27-2). Y is a group represented by the following formula (27-3). It should be noted that the symbols in the formula are only applicable in this formula.) (In the formula, R 3 is a single bond or a divalent organic group having 1 to 20 carbon atoms, and R 4 is a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, and the dashed line represents a connecting bond. It should be noted that the symbols in the formula are only applicable in this formula.) Polymers such as the following can be exemplified. The resin for forming an organic film can be synthesized by a known method, and commercially available products can be used. The compounding amount of the resin for forming the organic film is not particularly limited as long as it satisfies the film-forming property of spin coating of the organic film-forming composition. When the organic film-forming composition is set to 100 parts by mass, the content of the resin for forming the organic film is more preferably 10 to 40 parts by mass, further preferably 10 to 30 parts by mass, and still further preferably 10 to 25 parts by mass. For example, when using the organic film-forming composition to fill holes and grooves with a very high aspect ratio in a 3D NAND memory system structure, it is necessary to increase the compounding amount of the resin for forming the organic film. On the other hand, the viscosity of such an organic film-forming composition is high, and the in-plane uniformity and filling characteristics after spin coating deteriorate. Even with the above compounding ratio of the resin for forming the organic film, the organic film-forming composition of the present invention can form an organic film with excellent in-plane uniformity and filling characteristics, and thus can be suitably applied. [Solvent] As the solvent that can be used in the organic film-forming composition of the present invention, as long as it can dissolve the resin for forming the organic film and the aforementioned polymer, there is no particular limitation, and it can also be a solvent that can dissolve the acid generator, crosslinking agent, surfactant, etc. described later. Specifically, ketones such as 2-heptanone, cyclopentanone, and cyclohexanone can be mentioned; alcohols such as 3-methoxybutanol, 3-methyl-3-methoxybutanol, 1-methoxy-2-propanol, and 1-ethoxy-2-propanol; ethers such as propylene glycol monomethyl ether, ethylene glycol monomethyl ether, propylene glycol monoethyl ether, ethylene glycol monoethyl ether, propylene glycol dimethyl ether, and diethylene glycol dimethyl ether; esters such as propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, ethyl lactate, ethyl pyruvate, butyl acetate, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, tert-butyl acetate, tert-butyl propionate, γ-butyrolactone, and propylene glycol monotert-butyl ether acetate can be used. One of them can be used, or two or more of them can be used in combination, but they are not limited to them. Among them, it is preferable to use propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, 2-heptanone, cyclopentanone, cyclohexanone, γ-butyrolactone, and a mixture of two or more of them. [Other Components] In addition, an acid generator and a crosslinking agent for further promoting the crosslinking reaction can be added to the organic film-forming composition of the present invention. As the acid generator, substances that generate acid by thermal decomposition and substances that generate acid by light irradiation can be added. Specifically, as the acid generator, the substances described in paragraphs (0061) to (0085) of JP-A No. 2007-199653 can be mentioned. In addition, specifically, as the crosslinking agent, the substances described in paragraphs (0055) to (0060) of JP-A No. 2007-199653 can be mentioned. In addition, in the composition for forming an organic film of the present invention, in order to further improve the in-plane uniformity during spin coating, a surfactant may be added. As the surfactant, specifically, the substances described in paragraphs (0142) to (0147) of JP-A-2009-269953 can be cited. Furthermore, an alkaline compound for improving storage stability can be added to the composition for forming an organic film of the present invention. The alkaline compound functions as a quencher for acid, which prevents the crosslinking reaction from proceeding due to the acid slightly generated by the acid generator. As such an alkaline compound, specifically, the substances described in paragraphs (0086) to (0090) of JP-A-2007-199653 can be cited. As described above, if it is the composition for forming an organic film of the present invention, it becomes a composition for forming an organic film excellent in suppressing swelling during the EBR process. Therefore, the composition for forming an organic film of the present invention is extremely useful as a resist lower layer film material for multi-layer resist processes such as a two-layer resist process, a three-layer resist process using a silicon-containing resist intermediate film or a silicon-containing inorganic hard mask, and a four-layer resist process using a silicon-containing resist intermediate film or a silicon-containing inorganic hard mask and an organic antireflection film or a bonding film. [Organic Film Forming Method] In the present invention, there is provided an organic film forming method, which is a method for forming an organic film used in the manufacturing process of a semiconductor device. The composition for forming an organic film of the present invention is spin-coated on a substrate to be processed, and the substrate coated with the composition for forming an organic film is heat-treated at a temperature of 100°C or higher and 600°C or lower for a range of 10 to 600 seconds, thereby forming a hardened film. In this organic film forming method, first, the composition for forming an organic film of the present invention is spin-coated (spin coating) on a substrate to be processed. By using the spin coating method, good filling characteristics can be obtained. After removing the end film by the EBR process, baking (heat treatment) is performed to promote the crosslinking reaction. It should be noted that since the solvent in the composition can be evaporated by this baking, mixing can also be prevented when a resist upper layer film or a silicon-containing resist intermediate film is formed on the organic film. The baking is performed at a temperature of 100°C or higher and 600°C or lower for a range of 10 to 600 seconds, preferably at a temperature of 200°C or higher and 500°C or lower for a range of 10 to 300 seconds. Considering equipment damage and the influence on wafer deformation, the upper limit of the heating temperature in the lithography wafer process is preferably set to 600°C or lower, more preferably 500°C or lower. By performing heat treatment under such conditions, the crosslinking reaction can be promoted, and an organic film that does not mix with the film formed on the upper layer can be formed. [Pattern Formation Method] [Three-Layer Resist Process Using a Silicon-Containing Resist Intermediate Film] In the present invention, a pattern formation method is provided. An organic film is formed on a workpiece using the composition for forming an organic film of the present invention described above. A resist intermediate film is formed on the organic film using a resist intermediate film material containing a silicon atom. A resist upper film is formed on the resist intermediate film using a resist upper film material formed from a photoresist composition. A circuit pattern is formed in the resist upper film. Using the resist upper film having the circuit pattern as a mask, a pattern is transferred to the aforementioned resist intermediate film by etching. Using the resist intermediate film having the transferred pattern as a mask, a pattern is transferred to the aforementioned organic film by etching. Further, using the organic film having the transferred pattern as a mask, a pattern is transferred to the aforementioned workpiece by etching. As the workpiece, it is preferable to use a semiconductor device substrate or a workpiece having a metal film, a metal carbide film, a metal oxide film, a metal nitride film, a metal oxycarbide film, or a metal oxynitride film formed thereon. More specifically, there is no particular limitation, and substrates such as Si, α-Si, p-Si, SiO 2 , SiN, SiON, W, TiN, Al, etc. can be used; workpieces having the above metal films formed thereon as a processed layer, etc. As the processed layer, Si, SiO 2 , SiON, SiN, p-Si, α-Si, W, W-Si, Al, Cu, Al-Si, and other various Low-k films and their barrier films can be used, and the thickness can generally be formed to be 50 to 10,000 nm, especially 100 to 5,000 nm. It should be noted that when forming the processed layer, different materials can be used for the substrate and the processed layer. It should be noted that the metal constituting the workpiece is preferably silicon, titanium, tungsten, hafnium, zirconium, chromium, germanium, copper, silver, gold, aluminum, indium, gallium, arsenic, palladium, iron, tantalum, iridium, molybdenum, or an alloy thereof. When forming an organic film on a workpiece using the composition for forming an organic film of the present invention, the above-described organic film formation method of the present invention can be applied. Next, a resist intermediate film (silicon-containing resist intermediate film) is formed on the organic film using a resist intermediate film material containing silicon atoms. As the resist intermediate film material containing silicon atoms, an intermediate film material based on a polysiloxane matrix is preferably used. By providing the silicon-containing resist intermediate film with an antireflection effect, reflection can be suppressed. In particular, for 193 nm exposure applications, if a material that contains a large amount of aromatic groups and has a high etching selectivity with respect to the substrate is used as the composition for forming the organic film, the k value becomes high and the substrate reflection becomes high. As the silicon-containing resist intermediate film, by providing it with absorption that exhibits an appropriate k value, reflection can be suppressed, and the substrate reflection can be set to 0.5% or less. As the silicon-containing resist intermediate film having an antireflection effect, anthracene is preferably used for 248 nm and 157 nm exposure applications, and a polysiloxane having a phenyl group or a light-absorbing group containing a Si—Si bond in a pendant group structure and crosslinked by an acid or heat is preferably used for 193 nm exposure applications. Next, a resist upper layer film is formed on the resist intermediate film using a resist upper layer film material formed from a photoresist composition. As the resist upper layer film material, either a positive type or a negative type can be used, and the same materials as those of commonly used photoresist compositions can be used. It is preferable to perform prebaking in the range of 60 to 180° C. for 10 to 300 seconds after spin-coating the resist upper layer film material. Thereafter, exposure is performed according to a conventional method, and then, post-exposure baking (PEB) and development are performed to obtain a resist upper layer film pattern. It should be noted that the thickness of the resist upper layer film is not particularly limited, and is preferably 30 to 500 nm, and particularly preferably 50 to 400 nm. Next, a circuit pattern (resist upper layer film pattern) is formed on the resist upper layer film. In the formation of the circuit pattern, it is preferable to form the circuit pattern by lithography using light having a wavelength of 10 nm or more and 300 nm or less, direct writing based on an electron beam, nanoimprinting, or a combination thereof. It should be noted that examples of the exposure light include high-energy rays having a wavelength of 300 nm or less, specifically, far ultraviolet rays, KrF excimer laser (248 nm), ArF excimer laser (193 nm), F 2 laser (157 nm), Kr 2 laser (146 nm), Ar 2 laser (126 nm), soft X-rays (EUV) of 3 to 20 nm, electron beam (EB), ion beam, X-rays, etc. In addition, in the formation of the circuit pattern, it is preferable to develop the circuit pattern with an alkali developer or an organic solvent. Next, using the resist upper layer film with the circuit pattern formed thereon as a mask, the pattern is transferred to the resist intermediate film by etching. The etching of the resist intermediate film using the resist upper layer film pattern as a mask is preferably carried out using a fluorocarbon-based gas. Thereby, a silicon-containing resist intermediate film pattern is formed. Next, using the resist intermediate film with the transferred pattern as a mask, the pattern is transferred to the organic film by etching. The silicon-containing resist intermediate film exhibits etching resistance based on oxygen or hydrogen, and the etching of the organic film using the silicon-containing resist intermediate film pattern as a mask is preferably carried out using an etching gas mainly composed of oxygen or hydrogen. Thereby, an organic film pattern is formed. Next, using the organic film with the transferred pattern as a mask, the pattern is transferred to the workpiece by etching. The etching of the next workpiece (processed layer) can be carried out by a conventional method. For example, if the workpiece is SiO 2 , SiN, a silicon dioxide-based low dielectric constant insulating film, etching mainly using a Freon-based gas is carried out, and if it is p-Si, Al, W, etching mainly using a chlorine-based or bromine-based gas is carried out. In the case of substrate processing by etching based on a Freon-based gas, the silicon-containing resist intermediate film pattern peels off during substrate processing. On the other hand, in the case of substrate processing by etching based on a chlorine-based or bromine-based gas, in order to peel off the silicon-containing resist intermediate film pattern, dry etching peeling based on a Freon-based gas needs to be carried out separately after substrate processing. The organic film obtained using the composition for forming an organic film of the present invention enables the workpiece to have excellent etching resistance during etching. [Four-layer resist process using a silicon-containing resist intermediate film and an organic antireflection film or adhesion film] Further, in the present invention, a pattern forming method is provided, in which an organic film is formed on a workpiece using the composition for forming an organic film of the present invention described above, a resist intermediate film is formed on the organic film using a resist intermediate film material containing a silicon atom, an organic antireflection film or adhesion film is formed on the resist intermediate film, a resist upper layer film is formed on the organic antireflection film or adhesion film using a resist upper layer film material formed of a photoresist composition, a circuit pattern is formed on the resist upper layer film, using the resist upper layer film having the circuit pattern formed thereon as a mask, the pattern is transferred to the organic antireflection film or adhesion film and the resist intermediate film by etching, using the resist intermediate film having the pattern transferred thereon as a mask, the pattern is transferred to the organic film by etching, and further, using the organic film having the pattern transferred thereon as a mask, the pattern is transferred to the workpiece by etching. It should be noted that this method is carried out in the same manner as the above three-layer resist process using a silicon-containing resist intermediate film, except that an organic antireflection film (BARC) or adhesion film is formed between the resist intermediate film and the resist upper layer film. The organic antireflection film and the adhesion film can be formed by spin coating using known organic antireflection film materials or adhesion film materials. [Three-layer resist process using an inorganic hard mask] Additionally, in the present invention, as a pattern formation method of a three-layer resist process based on the composition for forming an organic film of the present invention described above, a pattern formation method is provided, which forms an organic film on a workpiece using the composition for forming an organic film of the present invention described above, forms an inorganic hard mask selected from silicon oxide films, silicon nitride films, and silicon oxynitride films on the organic film, forms a resist upper layer film on the inorganic hard mask using a resist upper layer film material formed from a photoresist composition, forms a circuit pattern on the resist upper layer film, uses the resist upper layer film having the circuit pattern as a mask, transfers the pattern to the aforementioned inorganic hard mask by etching, uses the inorganic hard mask having the transferred pattern as a mask, transfers the pattern to the aforementioned organic film by etching, and further, uses the organic film having the transferred pattern as a mask, and transfers the pattern to the aforementioned workpiece by etching. It should be noted that this method can be operated in the same manner as the above three-layer resist process using a silicon-containing resist intermediate film, except that an inorganic hard mask is formed on the organic film instead of the resist intermediate film. The inorganic hard mask selected from silicon oxide films, silicon nitride films, and silicon oxynitride (SiON film) can be formed by CVD method, ALD method, etc. As a method for forming a silicon nitride film, it is described in, for example, Japanese Patent Application Laid-Open No. 2002-334869, International Publication No. 2004 / 066377, etc. The film thickness of the inorganic hard mask is preferably 5 to 200 nm, more preferably 10 to 100 nm. As the inorganic hard mask, SiON film having a high antireflection film effect is most preferably used. [Four-layer resist process using an inorganic hard mask and an organic antireflection film or adhesion film] Additionally, in the present invention, as a pattern formation method of a four-layer resist process based on the composition for forming an organic film of the present invention described above, a pattern formation method is provided, which forms an organic film on a workpiece using the composition for forming an organic film of the present invention described above, forms an inorganic hard mask selected from silicon oxide films, silicon nitride films, and silicon oxynitride films on the organic film, forms an organic antireflection film or adhesion film on the inorganic hard mask, forms a resist upper layer film on the organic antireflection film or adhesion film using a resist upper layer film material formed from a photoresist composition, forms a circuit pattern on the resist upper layer film, uses the resist upper layer film having the circuit pattern as a mask, transfers the pattern to the aforementioned organic antireflection film or adhesion film and the aforementioned inorganic hard mask by etching, uses the inorganic hard mask having the transferred pattern as a mask, transfers the pattern to the aforementioned organic film by etching, and further, uses the organic film having the transferred pattern as a mask, and transfers the pattern to the aforementioned workpiece by etching. It should be noted that, except for forming an organic anti-reflection coating (BARC) or a conformal coating between the inorganic hard mask and the upper resist film, this method can be operated in the same manner as the above-described three-layer resist process using an inorganic hard mask. Especially when using a SiON film as the inorganic hard mask, through the two-layer anti-reflection coating of the SiON film and the BARC, reflection can be suppressed even in immersion lithography with a high NA exceeding 1.0. As another advantage of forming the BARC, it has the effect of reducing the curling of the upper resist film pattern directly above the SiON film. Here, an example of the pattern formation method based on the three-layer resist process of the present invention is shown in FIGS. 3(A) to (F). In the case of the three-layer resist process, as shown in FIG. 3(A), after forming the organic film 3 on the processed layer 2 formed on the substrate 1 using the composition for forming an organic film of the present invention, a silicon-containing resist intermediate film 4 is formed, and an upper resist film 5 is formed thereon. Then, as shown in FIG. 3(B), the exposed portion 6 of the upper resist film 5 is exposed, and PEB (post-exposure bake) is performed. Then, as shown in FIG. 3(C), development is performed to form the upper resist film pattern 5a. Then, as shown in FIG. 3(D), using the upper resist film pattern 5a as a mask, the silicon-containing resist intermediate film 4 is dry-etched using a chlorofluorocarbon gas to form the silicon-containing resist intermediate film pattern 4a. Then, as shown in FIG. 3(E), after removing the upper resist film pattern 5a, using the silicon-containing resist intermediate film pattern 4a as a mask, the organic film 3 is oxygen plasma-etched to form the organic film pattern 3a. Further, as shown in FIG. 3(F), after removing the silicon-containing resist intermediate film pattern 4a, using the organic film pattern 3a as a mask, the processed layer 2 is etched to form the pattern 2a. By suppressing the swelling during the formation of the organic film, it is possible to reduce the defects caused by the swelling of the organic film during the dry etching processes in FIGS. (D), (E), and (F). In the case of forming an inorganic hard mask, it is only necessary to change the silicon-containing resist intermediate film 4 to an inorganic hard mask. In the case of forming a BARC or a conformal coating, it is only necessary to form a BARC or a conformal coating between the silicon-containing resist intermediate film 4 and the upper resist film 5. The etching of the BARC can be continuously performed before the etching of the silicon-containing resist intermediate film 4, or after performing only the etching of the BARC, the etching device, etc. can be changed to perform the etching of the silicon-containing resist intermediate film 4. In summary, if it is the pattern formation method of the present invention, then through the multi-layer resist process, a fine pattern can be formed on the workpiece with high precision and the swelling of the organic film formation can be suppressed. Thus, the defects caused by the swelling of the organic film can be reduced. [Examples] Hereinafter, Synthesis Examples, Comparative Synthesis Examples, Examples, and Comparative Examples are shown to more specifically illustrate the present invention, but the present invention is not limited thereto. Note that the method for measuring the molecular weight is specifically carried out by the following method. The weight average molecular weight (Mw), number average molecular weight (Mn) in terms of polystyrene, and the dispersity (Mw / Mn) are determined by gel permeation chromatography (GPC) using tetrahydrofuran as the eluent (solvent). [Preparation of Polymers (A-1 to 24, a-1 to 10)] To synthesize polymers (A-1) to (A-24) and comparative polymers (a-1) to (a-10) used in the preparation of the organic film-forming composition, monomers (B-1) to (B-6), (C-1) to (C-8), (D-1), and (E-1) to (E-3) shown below are used. [Synthesis Example 1] Synthesis of Polymer (A-1) Under a nitrogen atmosphere, 6.0 g of propylene glycol monomethyl ether acetate (PGMEA) was heated and stirred at 80°C. Over 4 hours, 3.18 g (0.010 mol) of (B-1) and a mixture of 7.74 g (0.035 mol) of (C-1), 0.473 g of 2,2'-azobis(2-methylpropionic acid) dimethyl ester, and 34 g of PGMEA were added dropwise thereto. Further, after heating and stirring for 16 hours, it was cooled to room temperature to obtain a PGMEA solution of the target polymer (A-1). As a result of analysis, the weight average molecular weight (Mw) of polymer (A-1) was 6900, and the dispersity (Mw / Mn) was 1.4. [Synthesis Examples 2 to 34] Synthesis of Polymers (A-2) to (A-24) and Comparative Polymers (a-1) to (a-10) The types and molar ratios of the raw material monomers used were changed according to the structure of each polymer. Except for this, polymers (A-2) to (A-24) and comparative polymers (a-1) to (a-10) as shown below were obtained as products by the method based on Synthesis Example 1. In addition, the fluorine content calculated based on the weight average molecular weight (Mw), dispersity (Mw / Mn), raw material monomers, and their compounding ratios determined by GPC is shown. The above polymers are all random copolymers. According to Table 1, the fluorine contents in (a-1) to (a-5) are outside the range, so they are comparative polymers, and (a-6) to (a-10) contain structural units different from those of Formula (II) or Formula (III), so they are comparative polymers. [Table 1-1] [Table 1-2] [Resin for forming organic film] F-1: Resin represented by the following formula (F-1) F-2: Resin represented by the following formula (F-2) F-3: Resin represented by the following formula (F-3) F-4: Resin represented by the following formula (F-4) F-5: Resin represented by the following formula (F-5) F-6: Resin represented by the following formula (F-6) [Solvent] G-1: Propylene glycol monomethyl ether acetate G-2: Propylene glycol monoethyl ether [Preparation of organic film-forming compositions (UDL-1 to 102, Comparative UDL-1 to 33)] The above-mentioned polymers (A-1) to (A-24), (a-1) to (a-10), the resin for forming an organic film (F-1) to (F-6), and the solvent were dissolved in the ratios shown in Table 2 and filtered through a 0.1 μm fluororesin filter to prepare organic film materials (UDL-1 to 102, Comparative Examples UDL-1 to 33), respectively. These organic film compositions all contain random copolymers. [Table 2-1] [Table 2-2] [Table 2-3] [Table 2-4] [Table 2-5] [Fabrication of Silicon Wafers with Organic Hard Films Formed Using Organic Film-Forming Compositions (UDL-1 to 102, Comparative UDL-1 to 33)] Using the coating / developer "CLEAN TRACK LITHIUS Pro AP" from Tokyo Electron Limited, 2 mL of the above-prepared organic film-forming composition (UDL-1 to 102, Comparative UDL1 to 33) was ejected onto the center of a silicon wafer. After baking, it was rotated at a rotational speed to achieve the average film thickness described in Table 3 and spread, thereby forming a film. While rotating the silicon wafer at a speed of 1000 rpm, a removal liquid ejection nozzle ejected a removal liquid (a mixed liquid of propylene glycol monomethyl ether acetate and propylene glycol monomethyl ether (30:70, mass ratio)) at an ejection rate of 2 mL / s, and it was moved from the outer peripheral part of the silicon wafer to the center part at a speed of 5 mm / s to a position of 3 mm. At this position, the removal liquid was further ejected at an ejection rate of 2 mL / s for 5 seconds. Thereafter, the ejection of the liquid was stopped, and further, it was rotated at a speed of 1000 rpm for 30 seconds. Then, the silicon wafer obtained by forming a film of the above-described organic film-forming composition was heated at 350 °C for 60 seconds, thereby obtaining a silicon wafer with an organic hard film formed thereon. [Solvent Resistance Evaluation: Examples 1-1 to 1-102, Comparative Examples 1-1 to 1-33] An organic film-forming composition (UDL-1 to 102, Comparative UDL1-1 to 1-33) was formed into a film on a silicon wafer by the above method, the film thickness was measured, PGMEA solvent was dispensed thereon, left for 30 seconds, spin-dried, baked at 100 °C for 60 seconds to evaporate the PGMEA, and the film thickness was measured. Let the film thickness before dispensing the PGMEA solvent be X, and the film thickness after dispensing the PGMEA solvent be X 1 , and the absolute value of the value obtained by (X 1 - X) / X × 100 was taken as the film thickness change rate (%), and the results are shown in Table 3. A case where the film thickness change rate was less than 0.5% was regarded as good, and a case where it was 0.5% or more was regarded as bad. [In-Plane Uniformity Evaluation: Examples 1-1 to 1-102, Comparative Examples 1-1 to 1-33] An organic film-forming composition (UDL-1 to 102, Comparative UDL1-1 to 1-33) was formed into a film on a silicon wafer by the above method, the film thickness within a radius of 145 mm from the center of the organic hard film was measured, the maximum value of the film thickness was set as X max , the minimum value of the film thickness was set as X min , the average film thickness was set as X average , and by (X max -X min ) / X average The obtained value is used as the in-plane uniformity (%), and the results are shown in Table 3. When the in-plane uniformity is less than 2%, it is designated as A (good); when it is 2% or more and less than 3%, it is designated as B; when it is 3% or more, it is designated as C (bad). [Low-temperature storage stability evaluation: Examples 1-1 to 1-102, Comparative Examples 1-1 to 1-33] The organic film-forming compositions (UDL-1 to 102, Comparative UDL1-1 to 1-33) were stored in a refrigerator set at -20°C for 1 week. When no precipitate was formed, it was designated as good; when a precipitate was formed, it was designated as bad. The results are shown in Table 3. [Table 3-1] [Table 3-2] [Table 3-3] [Table 3-4] [Table 3-5] [Evaluation of bulge suppression: Examples 2-1 to 2-102, Comparative Examples 2-1 to 2-25] The organic film-forming compositions (UDL-1 to 102, Comparative UDL-1 to 6, 8, 10 to 14, 21 to 33) were formed into films on a silicon wafer by the above method. Using an Alpha-Step D-600 (contact profilometer) manufactured by KLA-TENCOR Corporation, the height change was measured at positions from the outer peripheral end of the organic film toward the center of the silicon wafer up to 1000 μm. When the height of the silicon wafer was set to 0, as shown in Figure 2, when the maximum height was less than 110% of the film thickness, it was evaluated as A (good); when the maximum height was 110% or more and less than 150%, it was evaluated as B; when, as shown in Figure 1, a region with a maximum height of 150% or more was generated, it was evaluated as C (bad). The results are shown in Table 4. [Filling evaluation - 1: Examples 2-1 to 2-102, Comparative Examples 2-1 to 2-25] As shown in Figure 4, on SiO having a dense hole pattern (hole diameter: 0.2 μm, hole depth: 1.0 μm, center-to-center distance between adjacent two holes: 0.4 μm) 2On a wafer substrate, a resist underlayer film 8 is formed by forming a film of an organic film-forming composition (UDL-1 to 102, Comparative UDL-1 to 6, 8, 10 to 14, 21 to 33) by the above method. The substrate used is a base substrate (SiO 2 wafer substrate) 7 having a dense hole pattern as shown in (G) (top view) and (H) (cross-sectional view) of FIG. 4. The cross-sectional shape of each obtained wafer substrate is observed using a scanning electron microscope (SEM), and it is confirmed whether the inside of the hole is filled with the resist underlayer film without voids. When using a resist underlayer film material with poor filling characteristics, voids are generated inside the holes. When using a resist underlayer film material with good filling characteristics, in this evaluation, as shown in (I) of FIG. 4, the inside of the hole is filled with the resist underlayer film without voids. The case where no voids are generated is evaluated as good, and the case where voids are generated is evaluated as bad. [Filling Evaluation - 2: Examples 2-1 to 2-102, Comparative Examples 2-1 to 2-25] As shown in FIG. 4, on a SiO 2 wafer substrate having a dense hole pattern (hole diameter: 0.2 μm, hole depth: 2.0 μm, center-to-center distance between adjacent two holes: 0.4 μm), a film of an organic film-forming composition (UDL-1 to 102, Comparative UDL-1 to 6, 8, 10 to 14, 21 to 33) is formed by the above method to form a resist underlayer film 8. The substrate used is a base substrate (SiO 2 wafer substrate) 7 having a dense hole pattern as shown in (G) (top view) and (H) (cross-sectional view) of FIG. 4. The cross-sectional shape of each obtained wafer substrate is observed using a scanning electron microscope (SEM), and it is confirmed whether the inside of the hole is filled with the resist underlayer film without voids. When using a resist underlayer film material with poor filling characteristics, voids are generated inside the holes. When using a resist underlayer film material with good filling characteristics, in this evaluation, as shown in (I) of FIG. 4, the inside of the hole is filled with the resist underlayer film without voids. The case where no voids are generated is evaluated as good, and the case where voids are generated is evaluated as bad. In addition, when the proportion of the resin for forming the organic film is small relative to the organic film-forming composition and the resin amount is insufficient for filling the hole portion, film formation failure occurs. [Table 4-1] [Table 4-2] [Table 4-3] [Table 4-4] [Table 4-5] As shown in Table 3-1 to Table 3-5 and Table 4-1 to Table 4-5, it can be confirmed that the compositions for forming an organic film (UDL-1 to 102) of the present invention are superior to the comparative examples in terms of solvent resistance, in-plane uniformity, bulge suppression property, and filling property. [Pattern formation test: Examples 3-1 to 3-88] Using the composition for forming an organic film (UDL-1 to 88) by the above method, an organic hard film was formed on a SiO 2 wafer substrate. The following silicon-containing resist intermediate film material (SOG1) was coated thereon and baked at 200 °C for 60 seconds to form a silicon-containing resist intermediate film with a film thickness of 35 nm. The following single-layer resist for ArF as a resist upper layer film material was coated thereon and baked at 105 °C for 60 seconds to form a photoresist film with a film thickness of 100 nm. The following immersion protective film material (TC-1) was coated on the photoresist film and baked at 90 °C for 60 seconds to form a protective film with a film thickness of 50 nm. As the silicon-containing resist intermediate film material (SOG1), a 2% solution of the following polymer in propylene glycol ethyl ether was prepared. As the resist upper layer film material (single-layer resist for ArF), the polymer (RP1), the acid generator (PAG1), and the basic compound (Amine1) were dissolved in a solvent containing 0.1% by mass of FC-430 (manufactured by Sumitomo 3M Limited) in the ratio shown in Table 5 and filtered through a 0.1-μm fluororesin filter, thereby preparing. [Table 5] The following shows the polymer (RP1), the acid generator (PAG1), and the basic compound (Amine1). As the immersion protective film material (TC-1), the polymer (PP1) was dissolved in an organic solvent in the ratio shown in Table 6 and filtered through a 0.1-μm fluororesin filter, thereby preparing. [Table 6] The following shows the polymer (PP1). Next, exposure was performed using an ArF immersion exposure apparatus (manufactured by Nikon Corporation; NSR-S610C, NA 1.30, σ 0.98 / 0.65, 35-degree dipole s-polarized light illumination, 6% halftone phase shift mask), baking (PEB) was performed at 100 °C for 60 seconds, and development was performed for 30 seconds with a 2.38% by mass aqueous solution of tetramethylammonium hydroxide (TMAH) to obtain a 55-nm 1:1 positive line and space pattern (resist upper layer film pattern). Next, using the resist upper layer film pattern as a mask, a dry etching process (pattern transfer) is performed on the silicon-containing resist intermediate film using an etching device Telius manufactured by Tokyo Electron Limited. Using the obtained silicon-containing resist intermediate film pattern as a mask, a dry etching process (pattern transfer) is performed on the organic film. Using the obtained organic film pattern as a mask, dry etching is performed on the SiO 2 wafer substrate (SiO 2 film) (pattern transfer). The etching conditions are as follows. (Conditions for transferring the resist upper layer film pattern to the silicon-containing resist intermediate film) Chamber pressure: 10.0 Pa, RF power: 1,500 W, CF 4 gas flow rate: 75 mL / min, O 2 gas flow rate: 15 mL / min, time: 15 sec (Conditions for transferring the silicon-containing resist intermediate film pattern to the organic film) Chamber pressure: 2.0 Pa, RF power: 500 W, Ar gas flow rate: 75 mL / min, O 2 gas flow rate: 45 mL / min, time: 120 sec (Conditions for transferring the organic film pattern to the SiO 2 wafer substrate) Chamber pressure: 2.0 Pa, RF power: 2,200 W, C 5 F 12 gas flow rate: 20 mL / min, C 2 F 6 gas flow rate: 10 mL / min, Ar gas flow rate: 300 mL / min, O 2 gas flow rate: 60 mL / min, time: 90 sec The results obtained by observing the cross-section of the pattern using an electron microscope (S-4700) manufactured by Hitachi, Ltd. are shown in Tables 7-1 to 7-3. [Table 7-1] [Table 7-2] [Table 7-3] As shown in Tables 7-1 to 7-3, it can be confirmed that in Examples 3-1 to 3-88 using the composition for forming an organic film (UDL-1 to 88) of the present invention, the resist upper layer film pattern was finally well transferred to SiO 2 wafer substrate, and the composition for forming an organic film of the present invention is applicable to fine processing based on a multilayer resist method. As described above, if it is the composition for forming an organic film of the present invention, it has excellent film-forming properties, high filling characteristics, and bulge suppression properties. Therefore, it is extremely useful as an organic film material for a multilayer resist process. In addition, if it is the pattern forming method of the present invention using the same, it can fill holes and grooves with a very high aspect ratio without voids, and can form fine patterns with high precision, and can form an organic film with suppressed bulge. Therefore, semiconductor elements and the like can be efficiently manufactured. This specification includes the following aspects. [1]: A composition for forming an organic film, characterized in that it contains a resin for forming an organic film, a polymer, and a solvent, the polymer contains a structural unit represented by the following general formula (I), and contains at least one of a structural unit represented by the following general formula (II) and a structural unit represented by the following general formula (III), at least one of the structural unit represented by the following general formula (II) and the structural unit represented by the following general formula (III) forms a random copolymer with the structural unit represented by the aforementioned general formula (I), and the fluorine content rate of the aforementioned polymer is 5% by mass to 16% by mass. (In the formula, R 1 is a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, R 2 is a sulfonyl group having 1 to 20 carbon atoms with a fluorine atom and an organic group without an amino group.) (In the formula, R 3 is a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, R 4 and R 5 are each independently a linear or branched divalent alkylene group having 1 to 4 carbon atoms, R 6 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms or a phenyl group, m1 is 0 to 23, n1 is 0 to 23, and 23 ≥ m1 + n1 ≥ 2.) (In the formula, R 7 and R 8 are a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, R 9 and R 10 are each independently an optionally linear or branched divalent alkylene group having 1 to 4 carbon atoms, m2 is 0 to 23, n2 is 0 to 23, and 23 ≥ m2 + n2 ≥ 2. ) [2]: The composition for forming an organic film according to [1], wherein R of the structural unit represented by the general formula (I) of the polymer 2 contains a structure represented by the following general formula (IV) or (V). (In the formula, * represents a bonding position.) [3]: The composition for forming an organic film according to [1] or [2], characterized in that the resin for forming the organic film is a resin having an aromatic skeleton. [4]: The composition for forming an organic film according to any one of [1] to [3], characterized in that when the resin for forming the organic film is 100 parts by mass, the content of the polymer is 0.01 parts by mass to 5 parts by mass. [5]: The composition for forming an organic film according to any one of [1] to [4], characterized in that when the composition for forming the organic film is 100 parts by mass, the content of the resin for forming the organic film is 10 parts by mass to 40 parts by mass. [6]: An organic film forming method, characterized in that it is a method for forming an organic film used in the manufacturing process of a semiconductor device, spin-coating the composition for forming an organic film according to any one of [1] to [5] on a substrate to be processed, and heat-treating the substrate coated with the composition for forming the organic film at a temperature of 100°C to 600°C for a range of 10 seconds to 600 seconds to form a cured film. [7]: A pattern forming method, characterized in that an organic film is formed on an object to be processed using the composition for forming an organic film according to any one of [1] to [5], a resist intermediate film is formed on the organic film using a resist intermediate film material containing a silicon atom, a resist upper layer film is formed on the resist intermediate film using a resist upper layer film material formed from a photoresist composition, a circuit pattern is formed on the resist upper layer film, the resist upper layer film having the circuit pattern is used as a mask, the pattern is transferred to the resist intermediate film by etching, the resist intermediate film having the transferred pattern is used as a mask, the pattern is transferred to the organic film by etching, and further, the organic film having the transferred pattern is used as a mask, and the pattern is transferred to the object to be processed by etching. [8]: A pattern forming method, characterized in that an organic film is formed on an object to be processed using the composition for forming an organic film according to any one of [1] to [5], a resist intermediate film is formed on the organic film using a resist intermediate film material containing a silicon atom, an organic antireflection film or a conformal film is formed on the resist intermediate film, a resist upper layer film is formed on the organic antireflection film or the conformal film using a resist upper layer film material formed from a photoresist composition, a circuit pattern is formed on the resist upper layer film, the resist upper layer film having the circuit pattern is used as a mask, the pattern is transferred to the organic antireflection film or the conformal film and the resist intermediate film by etching, the resist intermediate film having the transferred pattern is used as a mask, the pattern is transferred to the organic film by etching, and further, the organic film having the transferred pattern is used as a mask, and the pattern is transferred to the object to be processed by etching.[9]: A pattern formation method, characterized in that an organic film is formed on a workpiece using the composition for forming an organic film according to any one of [1] to [5], an inorganic hard mask selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film is formed on the organic film, a resist upper layer film is formed on the inorganic hard mask using a resist upper layer film material formed from a photoresist composition, a circuit pattern is formed on the resist upper layer film, the resist upper layer film having the circuit pattern formed thereon is used as a mask, the pattern is transferred to the aforementioned inorganic hard mask by etching, the inorganic hard mask having the pattern transferred thereon is used as a mask, the pattern is transferred to the aforementioned organic film by etching, and further, the organic film having the pattern transferred thereon is used as a mask, and the pattern is transferred to the aforementioned workpiece by etching.

[10] : A pattern formation method, characterized in that an organic film is formed on a workpiece using the composition for forming an organic film according to any one of [1] to [5], an inorganic hard mask selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film is formed on the organic film, an organic antireflection film or a conformal film is formed on the inorganic hard mask, a resist upper layer film is formed on the organic antireflection film or the conformal film using a resist upper layer film material formed from a photoresist composition, a circuit pattern is formed on the resist upper layer film, the resist upper layer film having the circuit pattern formed thereon is used as a mask, the pattern is transferred to the aforementioned organic antireflection film or conformal film and the aforementioned inorganic hard mask by etching, the inorganic hard mask having the pattern transferred thereon is used as a mask, the pattern is transferred to the aforementioned organic film by etching, and further, the organic film having the pattern transferred thereon is used as a mask, and the pattern is transferred to the aforementioned workpiece by etching.

[11] : The pattern formation method according to [9] or

[10] , characterized in that the formation of the aforementioned inorganic hard mask is carried out by CVD method or ALD method.

[12] : The pattern formation method according to any one of [7] to

[11] , characterized in that in the formation of the aforementioned circuit pattern, the circuit pattern is formed by lithography using light with a wavelength of 10 nm to 300 nm, direct writing based on an electron beam, nanoimprinting, or a combination thereof.

[13] : The pattern formation method according to any one of [7] to

[12] , characterized in that in the formation of the aforementioned circuit pattern, the circuit pattern is developed by alkali development or an organic solvent.

[14] : The pattern formation method according to any one of [7] to

[13] , characterized in that the aforementioned workpiece is a semiconductor device substrate or a workpiece having a metal film, a metal carbide film, a metal oxide film, a metal nitride film, a metal oxycarbide film, or a metal oxynitride film formed thereon on the semiconductor device substrate.

[15] : The pattern formation method according to

[14] , characterized in that the metal constituting the aforementioned workpiece is silicon, titanium, tungsten, hafnium, zirconium, chromium, germanium, copper, silver, gold, aluminum, indium, gallium, arsenic, palladium, iron, tantalum, iridium, molybdenum, or an alloy thereof. It should be noted that the present invention is not limited to the above-described embodiments. The above-described embodiments are illustrative, and any technical solutions having the same configuration as the technical idea described in the claims of the present invention and achieving the same effects are included in the technical scope of the present invention. 1: Substrate 2: Layer to be processed 2a: Pattern formed on the layer to be processed 3: Organic film 3a: Organic film pattern 4: Silicon-containing resist intermediate film 4a: Silicon-containing resist intermediate film pattern 5: Resist upper layer film 5a: Resist upper layer film pattern 6: Exposed portion 7: Base substrate 8: Resist lower layer film [FIG. 1] is a diagram showing the measurement of the protrusion height using a contact profilometer in an example of a comparative example (Comparative UDL-1) of the composition for forming an organic film of the present invention. [FIG. 2] is a diagram showing the measurement of the protrusion height using a contact profilometer in an example (UDL-4) of the composition for forming an organic film of the present invention. [FIG. 3](A) to (F) are explanatory diagrams of an example of a pattern formation method based on the three-layer resist process of the present invention. [FIG. 4](G) to (I) are explanatory diagrams of a method for evaluating the filling characteristics in the examples.

Claims

1. A composition for forming an organic film, characterized in that it comprises an organic film-forming resin, a polymer, and a solvent, wherein the organic film-forming resin is a resin having an aromatic backbone, the aromatic backbone being naphthalene, fumonisin, or carbazole, the polymer comprising a structural unit of general formula (I) and at least one of structural units of general formula (II) and general formula (III), wherein at least one of the structural units of general formula (II) and general formula (III) forms a random copolymer with the structural unit of general formula (I), the polymer having a fluorine content of 5% to 16% by mass, and R2 of the structural unit of general formula (I) of the polymer comprising a structure of general formula (V), wherein in formula (I), R1 is a hydrogen atom or an alkyl group having 1 to 20 carbon atoms; R2 is an organic group having 1 to 20 carbon atoms and having no fluorine atom, and is an organic group without amine or sulfonyl groups. In formula (II), R3 is a hydrogen atom or an alkyl group having 1 to 20 carbon atoms; R4 and R5 are either straight-chain or branched divalent alkyl groups having 1 to 4 carbon atoms; R6 is an alkyl group or a phenyl group having 1 to 4 carbon atoms; m1 is 0 to 23; n1 is 0 to 23; 23≥m1+n1≥2. In formula (III), R7 and R8 are hydrogen atoms or alkyl groups having 1 to 20 carbon atoms; R9 and R10 are either straight-chain or branched divalent alkyl groups having 1 to 4 carbon atoms; m2 is 0 to 23; n2 is 0 to 23; 23≥m2+n2≥2. In the formula, * indicates the bonding position.

2. The composition for forming an organic film as claimed in claim 1, characterized in that the resin for forming the organic film is set at 100 parts by weight, and the content of the polymer is 0.01 parts by weight to 5 parts by weight.

3. The composition for forming an organic film as claimed in claim 1, characterized in that the composition for forming an organic film is set to 100 parts by weight, and the content of the resin for forming an organic film is 10 parts by weight to 40 parts by weight.

4. A method for forming an organic film, characterized in that it is a method for forming an organic film used in a semiconductor device manufacturing process, wherein, An organic film forming composition of any one of claims 1 to 3 is spin-coated onto a substrate to be processed, and the substrate coated with the organic film forming composition is heat-treated at a temperature of 100°C to 600°C for a range of 10 seconds to 600 seconds to form a hardened film.

5. A pattern forming method, characterized in that an organic film is formed on a workpiece using an organic film forming composition as claimed in any one of claims 1 to 3; a resistive intermediate film is formed on the organic film using a resistive intermediate film material containing silicon atoms; a resistive upper film material formed from a photoresist composition is formed on the resistive intermediate film; a circuit pattern is formed on the resistive upper film; the resistive upper film with the circuit pattern is used as a mask to transfer the pattern to the resistive intermediate film by etching; the resistive intermediate film with the transferred pattern is used as a mask to transfer the pattern to the organic film by etching; and further, the organic film with the transferred pattern is used as a mask to transfer the pattern to the workpiece by etching.

6. A pattern forming method, characterized in that an organic film is formed on a workpiece using an organic film forming composition as claimed in any one of claims 1 to 3; a resistive intermediate film is formed on the organic film using a resistive intermediate film material containing silicon atoms; an organic antireflective film or a sealing film is formed on the resistive intermediate film; a resistive upper film material formed from a photoresist composition is formed on the organic antireflective film or the sealing film; a circuit pattern is formed on the resistive upper film; the resistive upper film with the circuit pattern is used as a mask; a pattern is transferred to the organic antireflective film or the sealing film and the resistive intermediate film by etching; the resistive intermediate film with the transferred pattern is used as a mask; a pattern is transferred to the organic film by etching; and further, the organic film with the transferred pattern is used as a mask; a pattern is transferred to the workpiece by etching.

7. A pattern forming method, characterized in that an organic film is formed on a workpiece using an organic film forming composition as claimed in any one of claims 1 to 3, an inorganic hard mask selected from silicon oxide film, silicon nitride film and silicon nitride film is formed on the organic film, an upper resistive film is formed on the inorganic hard mask using an upper resistive film material formed from a photoresist composition, a circuit pattern is formed on the upper resistive film, the upper resistive film with the circuit pattern is used as a mask, the pattern is transferred to the inorganic hard mask by etching, the pattern is transferred to the organic film by etching using the inorganic hard mask with the transferred pattern as a mask, and further, the pattern is transferred to the workpiece by etching using the organic film with the transferred pattern as a mask.

8. A pattern forming method, characterized in that an organic film is formed on a workpiece using an organic film forming composition as claimed in any one of claims 1 to 3; an inorganic hard mask selected from silicon oxide film, silicon nitride film, and silicon nitride film is formed on the organic film; an organic antireflective film or an adhesive film is formed on the inorganic hard mask; an upper resistive film formed on the organic antireflective film or adhesive film is formed using an upper resistive film material formed from a photoresist composition; a circuit pattern is formed on the upper resistive film; the upper resistive film with the circuit pattern is used as a mask; a pattern is transferred to the organic antireflective film or adhesive film and the inorganic hard mask by etching; the inorganic hard mask with the transferred pattern is used as a mask; a pattern is transferred to the organic film by etching; and then, the organic film with the transferred pattern is used as a mask; a pattern is transferred to the workpiece by etching.

9. The pattern forming method of claim 7, characterized in that the inorganic hard mask is formed by CVD or ALD.

10. The pattern forming method of claim 8, characterized in that the inorganic hard mask is formed by CVD or ALD.

11. The pattern forming method of claim 5, characterized in that, in forming the circuit pattern, the circuit pattern is formed by lithography using light with a wavelength of 10 nm to 300 nm, direct electron beam tracing, nanoimprinting, or a combination thereof.

12. The pattern forming method of claim 5, characterized in that, in forming the circuit pattern, the circuit pattern is developed by alkaline development or an organic solvent.

13. The pattern forming method of claim 5, characterized in that the workpiece is a semiconductor device substrate or is formed on the semiconductor device substrate by forming any one of a metal film, a metal carbide film, a metal oxide film, a metal nitride film, a metal oxide carbide film, and a metal oxynitride film.

14. The pattern forming method of claim 13, characterized in that the metal constituting the workpiece is silicon, titanium, tungsten, hafnium, zirconium, chromium, germanium, copper, silver, gold, aluminum, indium, gallium, arsenic, palladium, iron, tantalum, iridium, molybdenum or alloys thereof.

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