Substrate processing apparatus

Abstract

The substrate processing apparatus provided according to an embodiment of the present invention includes: a process chamber including a reaction space for processing at least one substrate; a gas injection unit disposed on the upper part of the process chamber for injecting process gas into the reaction space; a substrate support unit including: a base plate forming at least one mounting groove; at least one satellite disposed in the at least one mounting groove to load at least one substrate, which is suspended from the mounting groove based on at least one rotating gas supplied through the at least one mounting groove and is capable of rotation; and an axis rotatably disposed in the process chamber and combined with the base plate to cause the substrate to revolve; a rotation sensor for measuring the rotation speed of at least one satellite; and a control unit for adjusting the flow rate of at least one rotating gas supplied to at least one mounting groove in order to adjust the rotation speed of at least one satellite respectively.

Description

Technical Field

[0001] The present invention relates to a semiconductor manufacturing device, and more particularly to a substrate processing device. Prior Art

[0002] Generally speaking, various processes are performed in a substrate processing apparatus, which includes a process chamber in a vacuum environment, to manufacture semiconductor devices. For example, processes such as loading a substrate into the process chamber and depositing or etching a thin film on the substrate can be performed. Within the substrate processing apparatus, the substrate is supported by a substrate support within the process chamber, and a gas injection unit within the process chamber supplies process gases to the substrate, thereby processing the substrate.

[0003] To improve productivity, substrate processing equipment is being used that processes multiple substrates by loading them onto a single substrate support. In these substrate processing equipment, the substrate support rotates, causing the multiple substrates to orbit and each substrate to rotate independently, achieving uniform substrate processing. To achieve substrate rotation, a technology using a satellite is employed to simultaneously levitate the substrates and rotate them.

[0004] In this type of substrate processing apparatus, the satellite's rotation is achieved by supplying rotation gas to the satellite. Conventionally, the rotation gas flow rate is controlled by calculating the satellite's rotation value and comparing it with a target value. However, since the satellite's rotation value cannot be calculated in real time, it is calculated once each time the substrate support unit rotates. Controlling the rotation gas flow rate based on this rotation value results in significant flow rate fluctuations, large fluctuations, and poor reproducibility. Summary of the Invention

[0005] Technical Problems to be Solved

[0006] The present invention is proposed to address the aforementioned technical problems, and its purpose is to provide a substrate processing apparatus capable of reducing rapid flow rate fluctuations of a rotating gas and improving the uniformity of the substrate's rotational speed during satellite rotation. However, this is merely exemplary and does not limit the scope of the present invention. Means of Solving Problems

[0007] According to one embodiment of the present invention for solving the above-mentioned technical problem, a substrate processing apparatus comprises: a process chamber including a reaction space for processing at least one substrate; a gas injection unit disposed at an upper portion of the process chamber for injecting process gas into the reaction space; a substrate support unit comprising: a susceptor plate disposed in the process chamber opposite the gas injection unit and forming at least one placement slot; at least one satellite disposed in the at least one placement slot for loading the at least one substrate, the satellite being suspended from the placement slot and capable of rotation based on at least one rotation gas supplied through the at least one placement slot; and an axis rotatably disposed in the process chamber and coupled to the susceptor plate for causing the substrate to revolve; a rotation sensor for measuring the rotation speed of the at least one satellite; and a control unit for controlling the supply of the at least one rotation gas, adjusting the flow rate of the at least one rotation gas supplied to the at least one placement slot in order to adjust the rotation speed of each satellite, continuously supplying a set first flow rate of the rotation gas and, in addition, supplying a second flow rate of the rotation gas calculated based on the rotation speed.

[0008] According to the substrate processing apparatus, the control unit compares the set rotation speed value with the rotation speed value calculated from the rotation speed, and controls the supply of the second flow rate of the rotation gas supplied at a predetermined period using a PID control method.

[0009] According to the substrate processing apparatus, the control unit calculates the rotation speed value when the substrate supporting unit makes one revolution, and calculates the second flow rate when the substrate supporting unit makes one revolution.

[0010] According to the substrate processing device, it also includes at least one flow regulator for adjusting the flow of the at least one rotation gas supplied to the at least one placement tank, wherein the control unit controls the flow of the at least one rotation gas by controlling the at least one flow regulator.

[0011] According to the substrate processing device, the at least one placement slot includes a plurality of placement slots, the at least one satellite includes a plurality of satellites respectively placed in the plurality of placement slots, the at least one rotational gas includes a plurality of rotational gases respectively supplied to the plurality of placement slots, and the control part respectively receives the rotation speeds of the plurality of satellites input by the rotation sensor, and controls the flow rates of the plurality of rotational gases based on the rotation speed values ​​of the plurality of satellites calculated through the rotation speeds.

[0012] According to the substrate processing apparatus, the control unit compares the set rotation speed value with the rotation speed values ​​of the plurality of satellites, and controls the supply of the second flow rate of the rotation gas supplied at a predetermined period using a PID control method.

[0013] According to the substrate processing apparatus, the first flow rate is within a range of 80% to 90% of the total flow rate of the rotation gas.

[0014] According to the substrate processing apparatus, the second flow rate is within a range of 10 to 20% of the total flow rate of the rotation gas. Effects of Invention

[0015] According to the substrate processing apparatus of one embodiment of the present invention constructed as described above, it is possible to reduce the rapid flow rate change of the rotation gas and improve the uniformity of the rotation speed of the substrate. Of course, the scope of the present invention is not limited to this effect. Simple diagram description

[0016] Figure 1 is a schematic cross-sectional view showing a substrate processing apparatus according to one embodiment of the present invention; Figure 2 is a schematic perspective view showing a substrate supporting portion of the substrate processing apparatus of Figure 1; Figure 3 is a schematic plan view showing the gas injection plate of the substrate supporting portion of Figure 2; Figure 4 is a schematic bottom view showing the gas injection portion of the substrate processing apparatus of Figure 1; Figure 5 is a schematic partial perspective view showing the rotational speed of the satellite in the substrate processing apparatus of some embodiments of the present invention is measured; Figure 6 is a diagram showing a method of controlling the rotational speed of a satellite of a substrate processing apparatus using some embodiments of the present invention; Figure 7 is a diagram showing changes in the rotational gas flow rate when controlling the satellite rotation speed in some embodiments of the present invention; Figure 8 is a diagram showing changes in the satellite rotation speed when controlling the satellite rotation speed in some embodiments of the present invention; FIG9 is a diagram showing changes in the rotational gas flow rate when the satellite rotation speed is controlled in a comparative example; and FIG. 10 is a diagram showing changes in the satellite rotation speed when the satellite rotation speed is controlled in the comparative example. Implementation Method

[0017] Hereinafter, several preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0018] The various embodiments of the present invention are provided to more fully illustrate the present invention to those skilled in the art. The following embodiments may be modified in various ways, and the scope of the present invention is not limited to the following embodiments. Rather, these embodiments are provided to enrich and complete this document and to fully convey the concepts of the present invention to those skilled in the art. Furthermore, for ease of explanation and clarity, the thickness or size of various layers in the drawings may be exaggerated.

[0019] FIG1 is a schematic cross-sectional view of a substrate processing apparatus 200 according to an embodiment of the present invention. FIG2 is a schematic perspective view of a substrate support portion of the substrate processing apparatus 200 of FIG1 . FIG3 is a schematic plan view of a gas injection plate of the substrate support portion 230 of FIG2 . FIG4 is a schematic bottom view of the gas injection portion of the substrate processing apparatus 200 of FIG1 .

[0020] 1 to 4 , the substrate processing apparatus 200 may include a process chamber 210 , a gas injection unit 220 , a substrate support unit 230 , and a control unit 280 .

[0021] The process chamber 210 includes a reaction space 212 for processing at least one substrate S. For example, the process chamber 210 processes a plurality of substrates S within the reaction space 212. Furthermore, the process chamber 210 is maintained airtight and is connected to a vacuum pump (not shown) via at least one exhaust port 216 to exhaust process gases within the reaction space 212 and adjust the vacuum level within the reaction space 212.

[0022] The process chamber 210 can have various shapes. For example, it can include a chamber body 213 with an upper opening and a chamber lid 214 coupled to the chamber body 213. Furthermore, a sealing member such as an O-ring is coupled between the chamber body 213 and the chamber lid 214 for vacuum sealing. Furthermore, an openable and closable door (not shown) can be provided on the sidewall of the chamber body 213 to facilitate the movement of a plurality of substrates S.

[0023] The gas injection unit 220 is disposed at the top of the process chamber 210 and injects process gas into the reaction space 212. For example, the gas injection unit 220 may inject process gas supplied from outside the process chamber 210 into the reaction space 212. More specifically, the gas injection unit 220 is disposed at the top of the process chamber 210, such as on the chamber lid 214, to inject process gas toward at least one substrate S, for example, a plurality of substrates S, mounted on the substrate support 230.

[0024] In some embodiments, as shown in FIG4 , the gas injection unit 220 may include a plurality of gas injection units arranged in a circumferential direction, such as a first source gas injection unit 224 a, a second source gas injection unit 224 b, a reaction gas injection unit 226, and a plurality of purge gas injection units 228 a, 228 b, and 228 c. The purge gas injection unit 228 a is disposed between the first source gas injection unit 224 a and the second source gas injection unit 224 b, the purge gas injection unit 228 b is disposed between the first source gas injection unit 224 a and the reaction gas injection unit 226, and the purge gas injection unit 228 c is disposed between the second source gas injection unit 224 b and the reaction gas injection unit 226.

[0025] Furthermore, a plurality of injection holes for injecting the first source gas are formed on the first source gas injection unit 224a, a plurality of injection holes for injecting the second source gas are formed on the second source gas injection unit 224b, a plurality of injection holes for injecting the reaction gas are formed on the reaction gas injection unit 226, and a plurality of injection holes for injecting the purge gas are formed on the plurality of purge gas injection units 228a, 228b, and 228c.

[0026] Optionally, a curtain gas injection unit 222 is provided at the center of the gas injection unit 220. The curtain gas injection unit 222 has a plurality of injection holes formed therein for injecting a curtain gas to prevent mixing of the source gas and the reaction gas. For example, the purge gas and the curtain gas may include an inert gas.

[0027] In some embodiments, depending on the number of source gases, one of the first source gas injection unit 224a and the second source gas injection unit 224b may be omitted. For example, when forming a multi-layer thin film or a thin film including two or more metals, both the first source gas injection unit 224a and the second source gas injection unit 224b are required, but when forming a single-layer thin film or a thin film including one metal, one of the first source gas injection unit 224a and the second source gas injection unit 224b may be omitted.

[0028] The substrate support 230 is disposed in the process chamber 210 opposite the gas injection unit 220 to support at least one substrate S. Furthermore, the substrate support 230 is rotatably mounted in the process chamber 210. For example, the substrate support 230 is coupled to the process chamber 210 using a bellows structure (not shown) to maintain the airtightness of the process chamber 210 during the elevation and / or rotation of the shaft 160. From a functional perspective, the substrate support 230 can be referred to as a substrate holder or susceptor.

[0029] In some embodiments, the substrate support portion 230 may include: a base plate 110 , at least one satellite 130 , a shaft 160 , a pin support unit 170 , and / or a plurality of lift pins 180 .

[0030] The susceptor plate 110 is disposed in the process chamber 210 opposite the gas injection portion 220. Furthermore, at least one placement groove 120, for example, a plurality of placement grooves 120, may be formed on the susceptor plate 110. For example, the plurality of placement grooves 120 may be formed on the susceptor plate 110 in the shape of miniature grooves to accommodate a plurality of substrates S. Taking into account the size of the susceptor plate 110 and the processing speed, the plurality of placement grooves 120 may be formed in an appropriate number, not limited to the number shown in FIG. 2 , and may be varied to a more appropriate number.

[0031] In some embodiments, a plurality of support grooves 124 are formed on each of the plurality of mounting grooves 120. A plurality of through-holes 1242 are formed on the bottom surface of the plurality of support grooves 124, penetrating the base plate 110. A portion of the pin support unit 170 can be raised and lowered through the plurality of through-holes 1242.

[0032] In some embodiments, the base plate 110 is formed with a plurality of gas lines 112 and 114 connected through the plurality of placement grooves 120. The plurality of placement grooves 120 are formed with a plurality of gas outlets connected to the plurality of gas lines 112 and 114. For example, a levitation gas for suspending the plurality of substrates S can be supplied to the gas outlets of the plurality of placement grooves 120 via the plurality of gas lines 112, while a rotation gas for rotating the plurality of substrates S can be supplied to the gas outlets of the plurality of placement grooves 120 via the plurality of gas lines 114. Rotation gas is also called rotation gas.

[0033] The shaft 160 can be coupled to the susceptor plate 110. For example, the shaft 160 is coupled to the bottom surface or center of the susceptor plate 110 via a coupling structure, extending downward. Furthermore, the shaft 160 is rotatably mounted in the process chamber 210, enabling the plurality of substrates S to revolve. Optionally, the shaft 160 can be raised and lowered to move the substrates S up and down. For example, the shaft 160 is coupled to a drive device (not shown) that allows the shaft 160 to rotate or move up and down. As the shaft 160 rotates or moves up and down, the susceptor plate 110 also rotates or moves up and down.

[0034] In some embodiments, shaft 160 includes a gas line 162 for levitating gas and a plurality of gas lines 164 for rotating gas. Gas lines 162 and 164 are formed separately within shaft 160 and connected to a gas supply (not shown) outside process chamber 210 to receive levitating gas and rotating gas. Gas lines 162 and 164 are connected to the gas supply via a separate sealing device, such as a magnetic seal, to maintain the connection even when shaft 160 rotates.

[0035] Furthermore, the plurality of gas lines 162 and 164 are connected to the plurality of gas lines 112 formed in the base plate 110 and connected to the plurality of placement grooves 120. For example, the gas line 162 that allows the suspension gas to move is formed as a single line within the shaft 160, and branches into the plurality of gas lines 112 within the base plate 110, each connected to the plurality of placement grooves 120. The plurality of gas lines 164 that allow the rotation gas to move are formed separately within the shaft 160 according to the number of placement grooves 120, and are connected to the plurality of placement grooves 120 within the base plate 110 via the plurality of gas lines 114.

[0036] In some embodiments, the gas line 162 receives the levitation gas through a gas conduit 1622 outside the process chamber 210, and the at least one gas line 164 receives the spin gas through at least one gas conduit 1642. The gas conduit 1622 is provided with a flow regulator 1626 for regulating the flow of the levitation gas and a plurality of valves 1624 for opening and closing the conduit. The at least one gas conduit 1642 is provided with at least one flow regulator 1646 for regulating the flow of the spin gas and a plurality of valves 1644 for opening and closing the conduit.

[0037] At least one satellite 130 is disposed in at least one seating tank 120 to load at least one substrate S, and is suspended from the seating tank 120 and capable of rotation based on at least one rotation gas supplied through the at least one seating tank 120 .

[0038] For example, a plurality of satellites 130 are respectively mounted on a plurality of mounting slots 120. The number of the plurality of satellites 130 is the same as the number of the plurality of mounting slots 120. The plurality of satellites 130 are levitably mounted on the plurality of mounting slots 120, and a plurality of substrates S are respectively loaded onto the plurality of satellites 130 and levitated together with the satellites 130.

[0039] For example, the plurality of satellites 130 receive levitation gas from the plurality of mounting tanks 120 to be suspended from the plurality of mounting tanks 120. While suspended by the rotation gas received from the plurality of mounting tanks 120, the satellites 130 can rotate. For example, the levitation gas and the rotation gas supplied through the gas lines 112 and 114 of the base plate 110 are supplied to the plurality of satellites 130 through the gas outlets within the plurality of mounting tanks 120.

[0040] The satellites 130 rotate relative to the base plate 110 based on the rotational gas supplied through the mounting grooves 120. Consequently, the satellites 130 rotate relative to the base plate 110, thereby causing the substrates S to rotate relative to the base plate 110. This rotation of the satellites 130 or the substrates S relative to the base plate 110 is called rotation.

[0041] In some embodiments, the bottom surface of the plurality of satellites 130 has a sawtooth-shaped rotation pattern, thereby easily receiving the rotational force of the rotating gas. In addition, to adjust the stopping of the plurality of satellites 130, they receive the stopping gas supplied from the plurality of mounting slots 120 in the opposite direction of rotation.

[0042] In some embodiments, the satellite 130 rotates in a state of being suspended from the substrate seating portion 120 based on a gas ejected from the substrate seating portion 120 in a spiral shape.

[0043] In some embodiments, guide pins 126 for guiding the centers of the plurality of satellites 130 are coupled to the center portions of the plurality of mounting slots 120. Guide grooves (not shown) for fluidly coupling guide pins 126 are formed on the backsides of the plurality of satellites 130. Consequently, the plurality of satellites 130, coupled to guide pins 126, can float or rotate without being separated from the base plate 110.

[0044] In some embodiments, a gas distribution plate 140 may be coupled between the base plate 110 and the plurality of satellites 130. For example, the plurality of gas distribution plates 140 may be coupled to the plurality of seating slots 120, and the plurality of satellites 130 may be mounted on the gas distribution plate 140. The gas distribution plate 140 may have a through-hole 141 formed therein to communicate with the support slots 124 within the seating slots 120. For example, the through-hole 141 may be formed in the center of the gas distribution plate 140.

[0045] For example, the gas distribution plate 140 distributes the levitation gas and / or rotation gas supplied by the plurality of placement slots 120 to the satellite 130. A distribution channel 143 for distributing the levitation gas is formed on the back of the gas distribution plate 140. A plurality of through-holes 142 are formed in the distribution channel 143 to supply the levitation gas to the front of the gas distribution plate 140. Furthermore, a distribution channel 145 for distributing the rotation gas is formed on the back of the gas distribution plate 140. The distribution channel 145 is formed with at least one through-hole 144 to supply the rotation gas to the front of the gas distribution plate 140.

[0046] In some embodiments, a plurality of lift pins 180 are used to receive substrates S from an external source and load them onto satellite 130, or to transfer substrates S from satellite 130 to an external source. For example, the plurality of lift pins 180 extend through satellite 130 and are raised and lowered relative to satellite 130 to load or unload substrates S onto or from satellite 130. Furthermore, once substrates S are positioned on satellite 130, the plurality of lift pins 180 are coupled to satellite 130, allowing them to rise and fall or rotate together with the satellite 130.

[0047] In some embodiments, the pin support unit 170 is movable relative to the base plate 110 to support the plurality of lift pins 180 when loading or unloading the substrate S.

[0048] In some embodiments, a heater unit 250 for heating the substrate S is disposed within the process chamber 210 below the susceptor plate 110. For example, the heater unit 250 may include at least one heater 255, which may include various heating sources such as a heating wire or a cartridge heater. Multiple heaters 255 may be disposed in multiple areas. Furthermore, the heater unit 250 includes a housing 251 surrounding the sides of the heater 255 within the process chamber 210 below the susceptor plate 110, and a quartz plate 253 supported on the housing 252.

[0049] In some embodiments, the rotation sensor 275 is used to measure the rotation speed of at least one satellite 130, such as a plurality of satellites 130. For example, the rotation sensor 275 may be coupled to a sidewall of the process chamber 210, such as the chamber body 213, so that the plurality of satellites 130 can be visible through a window formed in the sidewall of the chamber body 213. For example, the rotation sensor 275 may measure the number of rotations of the plurality of satellites 130 and may include a displacement sensor.

[0050] For example, as shown in Figure 5, a groove pattern 132 is formed on the side of the plurality of satellites 130. The rotation sensor 275 measures the displacement changes of the groove pattern 132 to determine the rotational speed of the plurality of satellites 130. For example, the groove pattern 132 is formed by a regular arrangement of grooves, and may include a sawtooth pattern. The rotational speed of the plurality of satellites 130 includes the orbital speed based on the rotation of the base plate 110 and the rotational speed of each of the plurality of satellites 130. The orbital speed can be calculated separately from the encoder value of the motor driving the substrate support 230, so the rotational speed can be calculated from the rotational speed.

[0051] In some embodiments, the rotation sensor 275 may internally calculate the rotation speed and output it to the control unit 280, or the control unit 280 may receive the rotation speed from the rotation sensor 275 and calculate the rotation speed.

[0052] The control unit 280 controls the flow rate of the rotation gas to control the rotation speed, such as the rotation speed, of the at least one satellite 130. For example, the control unit 280 controls the at least one flow regulator 1646 to control the flow rate of the at least one rotation gas. The control unit 280 may be a processor that controls the flow regulator 1646 or a part of a central processing unit that includes the flow regulator 1646 and controls the entire substrate processing apparatus 200.

[0053] The control unit 280 adjusts the flow rate of at least one rotation gas supplied to at least one seating tank 120 to adjust the rotation speed of at least one satellite 130. Furthermore, the control unit 280 controls the supply of the at least one rotation gas by continuously supplying a set first flow rate of rotation gas to the at least one seating tank 120, while also supplying a second flow rate of rotation gas to the at least one seating tank 120, calculated based on the rotation speed value measured by the rotation sensor 275. For example, the second flow rate is dynamically or in real time calculated each time the rotation speed value of the satellite 130 is calculated.

[0054] In some embodiments, the first flow rate can serve as a basic control value for controlling the rotational gas flow and can be calculated by taking into account a minimum flow rate. For example, the first flow rate can be set through repeated experiments, taking into account the rotational speed of the target satellite 130.

[0055] In some embodiments, the second flow rate can be a value calculated at a predetermined period using PID control based on a target value of at least one rotation gas and the rotation speed of satellite 130. For example, control unit 280 compares the set rotation speed value with the rotation speed value calculated from the rotation speed and controls the supply of the second flow rate of the rotation gas provided at a predetermined period using PID control. PID control is a type of feedback control that maintains the output at a reference value based on the error between the controlled variable and a reference input. It can be a combination of proportional control, proportional-integral control, and proportional-derivative control.

[0056] In some embodiments, the rotation speed value and the second flow rate are calculated each time the substrate support unit 230 makes one revolution. For example, the control unit 280 calculates the rotation speed value and the second flow rate each time the substrate support unit 230 makes one revolution. As shown in FIG5 , each time the substrate support unit 230 makes one revolution, one rotation sensor 275 can calculate the rotation speed of each satellite 130 once. However, if multiple rotation sensors 275 are provided, the number of calculations can be increased to more than one.

[0057] In some embodiments, a plurality of satellites 130 are placed in a plurality of placement tanks 120, and a plurality of rotation gases are supplied to the plurality of placement tanks 120. Rotation sensors 275 can measure the rotation speeds of the plurality of satellites 130. In this case, the control unit 280 receives the rotation speeds of the plurality of satellites 130 from the rotation sensors 275 and controls the flow rates of the plurality of rotation gases based on the rotation speed values ​​of the plurality of satellites 130 calculated from the rotation speeds. For example, the control unit 280 can control the plurality of flow regulators 1646 connected to the plurality of gas pipelines 1642 through the plurality of placement tanks 120.

[0058] Furthermore, the second flow rate of the plurality of rotating gases is calculated based on the rotation speed values ​​of the plurality of satellites 130. For example, the control unit 280 compares the set rotation speed value with the rotation speed values ​​of the plurality of satellites 130 and supplies the second flow rate of rotating gas at a predetermined period using PID control.

[0059] In addition to controlling the rotational gas, the control unit 280 can also control the supply conditions of the levitation gas. For example, the supply conditions of the levitation gas may include whether the levitation gas is blocked, the flow rate of the levitation gas, the type of levitation gas, etc.

[0060] Next, a method for controlling the rotational speed of the plurality of satellites 130 using the substrate processing apparatus 200 will be described.

[0061] FIG. 6 illustrates a method for controlling the rotational speed of a satellite of a substrate processing apparatus 200 according to some embodiments of the present invention.

[0062] Referring to Figures 1 to 6 , a first flow rate of the rotational gas supplied to each satellite 130 can be set (S12). As previously described, the first flow rate is set near a minimum flow rate based on the target rotational speed of the satellite 130 and historical data. This first flow rate can be modified through repeated experimentation to not exceed the minimum flow rate. For example, the first flow rate can be within a range of approximately 80-90% of the total rotational gas flow rate. This first flow rate range can be set taking into account the minimum flow rate and the flow rate fluctuation range.

[0063] The rotational speed of each satellite 130 can then be measured using the rotation sensor 275 ( S14 ). As previously described, the rotational speed of each satellite 130 is measured using the rotation sensor 275 each time the substrate support 230 makes one revolution. Based on this rotational speed, the rotational speed of each satellite 130 is determined by taking into account the revolution speed of the substrate support 230.

[0064] Next, a second flow rate of the rotating gas is calculated based on the rotation speed value calculated from the rotation speed (S16). The second flow rate is calculated using a PID control method based on the target value of the rotating gas and the calculated rotation speed value. For example, in this step (S16), the second flow rate is dynamically or instantly calculated each time the rotation speed value is calculated. The second flow rate is within a range of 10-20% of the total flow rate of the rotating gas. This second flow rate is determined by taking into account the PID control range, i.e., the flow rate variation range, and can be determined based on the first flow rate.

[0065] Then, the first flow rate is added to the second flow rate to calculate the control flow rate of the rotation gas, that is, the total flow rate (S18). Every time the second flow rate is calculated, this control flow rate is updated.

[0066] The aforementioned control may be performed in a state where the plurality of substrates S are placed on the plurality of satellites 130 , or may be performed in a state where the plurality of substrates S are not placed on the plurality of satellites 130 .

[0067] As previously mentioned, when controlling the flow rate of the rotation gas to control the rotation of the plurality of satellites 130 or the plurality of substrates S, the first flow rate is continuously maintained while the second flow rate is dynamically varied for control. The first flow rate is supplied at a fixed level, significantly reducing the fluctuation in the flow rate of the rotation gas. This reduction in the flow rate fluctuation of the rotation gas can also reduce fluctuations in the rotation speed of the plurality of satellites 130 or the plurality of substrates S during the continuous processing of the plurality of substrates S, thereby improving the uniformity and reproducibility of the rotation speed.

[0068] The aforementioned substrate processing apparatus 200 can be used to form thin films on a plurality of substrates S using atomic layer deposition (ALD). When depositing thin films on a plurality of substrates S using the substrate processing apparatus 200, the uniformity of the film thickness across the plurality of substrates S can be improved by increasing the uniformity of the rotation speeds of the plurality of substrates S. Furthermore, the substrate processing apparatus 200 can be used to form thin films on a plurality of substrates S using chemical vapor deposition (CVD).

[0069] Next, changes in the flow rate of the rotating gas and changes in the rotating speed based on the comparative example and the embodiment will be described.

[0070] Figures 7 and 8 are graphs showing the changes in the rotational gas flow rate and the changes in the satellite rotation speed when controlling the satellite rotation speed in some embodiments of the present invention, and Figures 9 and 10 are graphs showing the changes in the rotational gas flow rate and the changes in the satellite rotation speed when controlling the satellite rotation speed in a comparative example.

[0071] In the comparative example, when controlling the rotation speed of the satellite, the overall flow rate is controlled in a PID manner, whereas in the embodiment, as described above, the first flow rate F1 is continuously supplied and the second flow rate F2 is controlled in a PID manner.

[0072] As shown in Figure 9, in the comparative example, the flow rate of the rotation gas fluctuates significantly within the range of 0 to 800 sccm. In contrast, as shown in Figure 7, the embodiment provides a substantially fixed first flow rate F1, for example, 600 sccm. Therefore, the overall flow rate is limited by the fluctuation range of the second flow rate F2, fluctuating within a range of only approximately 100 sccm. Therefore, compared to the comparative example, the flow rate fluctuation of the rotation gas in the embodiment is reduced to approximately 1 / 8.

[0073] As shown in Figure 10, the satellite's rotation speed fluctuates within a range of approximately 1.306 rpm in the comparative example, while the satellite's rotation speed fluctuates within a range of 0.673 rpm in the embodiment, as shown in Figure 8. Therefore, the range of the satellite's rotation speed in the embodiment is reduced to almost half that of the comparative example.

[0074] The present invention has been described with reference to the embodiments shown in the accompanying drawings. However, these are merely exemplary. Persons skilled in the art will readily appreciate that various modifications and equivalent embodiments are possible. Therefore, the true scope of protection for the present invention should be determined by the technical concepts of the appended claims.

[0075] 110: Base plate 112: Gas line 114: Gas line 120: Placement slot 124: Support groove 1242:Through hole 126: Guide pin 130: Satellite 132: Slot pattern 140: Gas distribution plate 141: Main body through hole 142:Through hole 143: Distribution flow path 144:Through hole 145: Distribution flow path 160: Axis 162: Gas Line 1622: Gas Pipeline 1624: Valve 1626:Flow Regulator 164: Gas Line 1642: Gas Pipeline 1644: Valve 1646:Flow Regulator 170: Pin support unit 180: Lifting pin 200: substrate processing device 210: Process chamber 212: Reaction Space 213: Chamber body 214: Chamber cover 216: Exhaust port 220: Gas injection unit 222: Air curtain air injection unit 224a: first source gas injection unit 224b: second source gas injection unit 226: Reaction gas injection unit 228a, 228b, 228c: Purge gas injection unit 230: substrate support portion 250: Heater 251: Shell body 253:Quartz plate 255: Heater 275: Rotation sensor 280: Control Department F1: First flow F2: Second flow S:Substrate S12~S18: Steps

Claims

1. A substrate processing apparatus, comprising: A process chamber, comprising a reaction space for processing at least one substrate; A gas injection unit is disposed on the upper part of the process chamber to inject process gas into the reaction space; a substrate support unit includes: a base plate disposed opposite to the gas injection unit in the process chamber and forming at least one mounting slot and at least one satellite disposed in the at least one mounting slot to load the at least one substrate, which is suspended from the mounting slot and capable of rotation based on at least one rotating gas supplied through the at least one mounting slot, and an axis rotatably disposed in the process chamber and combined with the base plate to cause the substrate to revolve; a rotation sensor for measuring the rotation speed of the at least one satellite; and a control unit for controlling the supply of the at least one rotating gas, adjusting the flow rate of the at least one rotating gas supplied to the at least one mounting slot in order to adjust the rotation speed of the at least one satellite respectively, continuously supplying a set first flow rate of rotating gas while simultaneously supplying a second flow rate of rotating gas that can be dynamically changed based on the rotation speed value calculated from the rotation speed.

2. The substrate processing apparatus according to claim 1, wherein, The control unit compares the set rotation speed value with the rotation speed value calculated from the rotation speed, and controls the supply of the second flow rate of the rotating gas in a predetermined period using PID control.

3. The substrate processing apparatus according to claim 2, wherein, The control unit calculates the rotation speed value when the substrate support portion revolves once, and calculates the second flow rate when the substrate support portion revolves once.

4. The substrate processing apparatus according to claim 1 further includes at least one flow regulator for regulating the flow rate of the at least one self-rotating gas supplied to the at least one mounting tank, wherein, The control unit controls the flow rate of the at least one rotating gas by controlling the at least one flow regulator.

5. The substrate processing apparatus according to claim 1, wherein, The at least one placement slot includes a plurality of placement slots, the at least one satellite includes a plurality of satellites respectively placed in the plurality of placement slots, the at least one rotating gas includes a plurality of rotating gases respectively supplied to the plurality of placement slots, the control unit receives the rotation speed of the plurality of satellites input by the rotation sensor, and controls the flow rate of the plurality of rotating gases respectively based on the rotation speed values ​​of the plurality of satellites calculated from the rotation speed.

6. The substrate processing apparatus according to claim 5, wherein, The control unit compares the set rotation speed value with the rotation speed values ​​of the plurality of satellites, and controls the supply of the second flow rate of rotating gas in a predetermined period using PID control.

7. The substrate processing apparatus according to claim 1, wherein, The first flow rate is in the range of 80-90% of the total flow rate of the rotating gas.

8. The substrate processing apparatus according to claim 1, wherein, The second flow rate is in the range of 10-20% of the total flow rate of the rotating gas.

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