Planarization method and device for hybrid bond structures

Abstract

This invention relates to a planarization method and apparatus for hybrid bonding structures. According to the invention, it provides a planarization method and apparatus for hybrid bonding structures, which can form the required recesses in the hybrid bonding process between the joints in a suitable shape during semiconductor and display fabrication processes, without causing rounding due to excessive polishing of the oxide film, while removing polishing residues on the surface of the oxide film and metal layer.

Description

[Technical Field]

[0001] The present invention relates to a planarization method and apparatus for a hybrid bonding structure, and more specifically, to a planarization method and apparatus for a hybrid bonding structure, which, in the semiconductor and display fabrication process, can form the recesses required in the hybrid bonding process between the joints in a suitable shape without the rounding phenomenon caused by excessive polishing of the oxide film, while removing polishing residues present on the surface of the oxide film and the metal layer. [Previous Technology]

[0002] In the semiconductor and display manufacturing process, chemical mechanical polishing (hereinafter referred to as "CMP") is also known as planarization process. It refers to the process of removing part of the barrier metal (hereinafter referred to as "metal layer") by combining physical processes (such as abrasion) and chemical processes (such as oxidation or chelation) to form a recess.

[0003] The CMP process uses a pad, slurry, and a dressing device. The pad provides mechanical force through the pressure of the carrier and can evenly transfer the slurry to the wafer surface through grooves and pores.

[0004] The pad is made of polyurethane and is classified according to its use, and the slurry is classified into oxide and metal types. When polishing metal, acid and oxidant are used to oxidize the surface, and when polishing oxide, a component that can form hydroxide on the surface is used.

[0005] The particle size of the slurry is very small, about 0.1um. If it clumps, scratches can be produced. Therefore, stirring is used to maintain the integrity of the slurry.

[0006] Because glazing residue accumulates on the pad surface, the removal ability of the trimmer is reduced. Therefore, diamond abrasive is used to manually scrape off the pad surface with accumulated glazing residue to restore it to its original state.

[0007] Specifically, the CMP process is carried out by using a polishing slurry composition with active chemical properties on a polishing pad on the surface of a rubbed semiconductor wafer, and the polishing particles contained in the polishing slurry composition and the surface protrusions of the polishing pad can generate mechanical friction with the surface of the semiconductor wafer, while effectively removing excess material used when forming layers by mechanical polishing.

[0008] The chemical components contained in the polishing slurry composition induce a selective chemical reaction on the semiconductor wafer surface while selectively removing the semiconductor wafer surface.

[0009] After the CMP process, particulate contaminants are generated. These contaminants originate from residues produced during the CMP process or from the removed layers. These residues or contaminants can induce wiring damage in various subsequent processes, such as metal wiring or formation, etching, or mixed bonding (die-to-die, die-to-wafer, or wafer-to-wafer recessed bonding, etc.), leading to surface damage and thus becoming a direct cause of poor electrical performance in semiconductor devices. In other words, a cleaning process is necessary as a subsequent step to remove the large amount of polishing residue present on the oxide film (oxide film layer surface) and metal layer surface.

[0010] The CMP process is applicable to hybrid bonding.

[0011] The hybrid bonding is a difficult technique to control because it uses pressure and heat to bond the dielectrics and thermal expansion to bond the metals, so it should be possible to bond them without affecting each other.

[0012] Therefore, due to the high conductivity and excellent electromigration resistance of copper, copper is widely used in the preparation of mixed bonding, and the dielectric can be an oxide film (such as SiO2).

[0013] Typically, hybrid bonding processes include a copper pad formation step and a bonding step. Holes in integrated circuits often have a high aspect ratio. To fill deep holes without seams or voids, a thick copper layer is deposited on the surface of the substrate. Therefore, removing the copper layer requires a CMP process.

[0014] Because this CMP process utilizes the selectivity ratio between two materials with different removal rates, it is unavoidable that a dishing phenomenon of steps will occur in the target film after the CMP process. For example, in metal CMP, when a metal layer is deposited between oxide films, only the metal layer is polished initially, but at some point, the metal layer with a faster removal rate is removed more than the oxide film, thus forming a so-called rounding structure, which can lead to an increase in metal resistance.

[0015] Thus, when a recess is formed between the joints required for hybrid bonding, a chamfered structure is formed due to the excessive polishing of the oxide film, and polishing residues on the surface of the oxide film and metal layer can be effectively removed. Therefore, it is necessary to develop a technology to solve the problem of increased metal resistance and improve the bonding force in the hybrid bonding process.

[0016] [Prior Art Documents] [Patent Documents] Korean Patent Publication No. 2022-0058414. [Summary of the Invention]

[0017] The problem to be solved by the invention

[0018] In order to solve the problems of the prior art as described above, the object of the present invention is to provide a new method for planarizing hybrid bond structures and an apparatus for planarizing hybrid bond structures.

[0019] In addition, the object of the present invention is to provide a planarization method and a planarization apparatus for a hybrid bonding structure, which forms the recess required in the hybrid bonding process between the joints in a suitable shape without the rounding phenomenon caused by excessive polishing of the oxide film, while suppressing the etching of the oxide film present on the surface of the oxide film and the metal layer, thereby suppressing the rounding phenomenon based on excessive polishing, and simultaneously improving the etching ability and cleaning ability, thereby being able to clean the polishing residue present on the surface of the oxide film and the metal layer, and providing excellent hybrid bonding force.

[0020] The objectives and other objectives of the present invention can be achieved by the present invention as described below.

[0021] Means used to solve problems

[0022] In order to achieve the above objective, the present invention provides a method for planarizing hybrid bonding structures.

[0023] II) In the first step, the hybrid bonding structure includes: a substrate; a hole formed in a recessed region of the substrate; an oxide layer formed in the recessed region and a non-recessed region of the substrate, respectively; a barrier layer formed on the bottom and sidewalls of the hole and on the oxide layer; and a metal layer formed in the hole and on the barrier layer.

[0024] III) In the first to second steps, the planarization method of the hybrid bonding structure includes: a first step of removing the metal layer formed on the non-recessed area of ​​the substrate; a second step of removing the metal layer residue, oxide layer and barrier layer formed on the oxide layer on the non-recessed area; a third step of planarizing the step difference between the metal layer and oxide film layer formed in the hole; and a fourth step of removing the barrier layer formed on the bottom and sidewall of the hole, while forming a metal thermal expansion space in a planar form.

[0025] IV) In the I) to III), the material of the metal layer may be copper.

[0026] V) In the I) to IV) of the above, the material of the barrier layer may include one or more selected from Ti, TiN, Ta and TaN.

[0027] VI) In the 1) to 5) statements, the material of the oxide layer may include one or more selected from Si, SiO2 and SiCN.

[0028] VII) In the first step, the metal layer removed in the first step may be all the metal layers deposited on the non-recessed area and part of the metal layer formed in the hole.

[0029] VIII) In steps I) to VII), the first step, the second step and the third step can be performed by a CMP process.

[0030] IX) In steps I) to VIII), the second step and the third step can be performed simultaneously.

[0031] X) In the I) to IX) of the above, the second and third steps can be performed by using a slurry with the polishing speed selection ratio of oxide layer to metal layer adjusted to 1:1.

[0032] XI) In the I) to X), the slurry may contain polishing particles, corrosion inhibitors, complexing agents and oxidants.

[0033] XII) In the I) to XI), the slurry may contain 0.05wt% to 5wt% of silicon dioxide particles, 0.001wt% to 1wt% of an azole-based corrosion inhibitor containing one or more N groups, 0.001wt% to 0.5wt% of an amino acid complexing agent, 0.05wt% to 1wt% of an oxidizing agent, and the balance being water.

[0034] XIII) In the first to second steps, the fourth step may be performed by filling the recessed areas of the substrate with an etching cleaning solution composition.

[0035] XIV) In the fourth step, after filling with the etching cleaning solution composition, the step e may be further included: filling the recessed area of ​​the substrate with DW (deionized water).

[0036] XV) In the I) to XIV) of the above, the etching cleaning fluid composition and DW may be filled with one or more pads and brushes selected independently from each other.

[0037] XVI) In the I) to XV) of the above, the etching cleaning solution composition may be an alkaline solution containing etching substances, metal corrosion inhibitors, silicon film anti-etching agents, hydroxyl-containing alkaline compounds and alkanolamine-containing compounds.

[0038] XVII) In the cases of I) to XVI), the etching material may be a compound containing carboxyl groups to selectively etch copper or titanium.

[0039] XVIII) In the above I) to XVII), as an example, the etching substance may be one or more selected from aspartic acid, ammonium citrate, glycine, arginine, histidine, lysine, alanine, citric acid, aspartic acid and glutamic acid. As a specific example, it may be ammonium citrate and citric acid, etc.

[0040] XIX) In the I) to XVIII) of the above, the etching material may contain 0.1% to 10% by weight, based on the total weight of the etching cleaning liquid composition.

[0041] XX) In the I) to XIX) of the above, the metal corrosion inhibitor may be a compound containing functional groups with high reducing power to prevent corrosion of copper or titanium.

[0042] XXI) In the I) to XX), the silicon film anti-etching agent may be a compound containing sulfonic acid groups for preventing the etching of silicon oxide films (silicon, silicon oxide film, silicon nitride film and silicon carbonitride film, etc.).

[0043] XXII) In the I) to XXI), the alkaline compound containing hydroxyl groups may be a compound that adjusts the pH of the etching cleaning solution composition to 8 or higher.

[0044] XXIII In the I) to XXII) of the present invention, the pH value of the etching cleaning solution composition may be in the range of 8 to 14.

[0045] XXIV) In the I) to XXIII) of the above, the fourth step may be carried out by chemical impregnation or physical washing.

[0046] XXV) In the I) to XXIV) of the above, the etching cleaning solution composition can be used to planarize the metal layer included in the hole by etching at an etching rate of less than 50 Å / min.

[0047] XXVI) In the I) to XXV) of the above, the etching cleaning solution composition can remove polishing residues present on the surface of the oxide layer and the metal layer.

[0048] XXVII) In the above I) to XXVI), the hybrid bonding structure planarization process may include, after the fourth step: a step of activating the surface with a pulse mode; a step of pre-bonding the die and wafer; and a step of densely bonding the bonding structure between the die and the wafer by thermal expansion.

[0049] In addition, the present invention provides a planarization device for a hybrid bonding structure (XXVIII).

[0050] XXIX) In the XXVIII), the hybrid bonding structure includes: a substrate; a hole formed in a recessed region of the substrate; an oxide layer formed in the recessed region and a non-recessed region of the substrate, respectively; a barrier layer formed on the bottom and sidewalls of the hole and on the oxide layer; and a metal layer formed in the hole and on the barrier layer.

[0051] XXX) In the XXVIII) to XXIX) of the above, the planarization device for the hybrid bonding structure includes: at least two CMP modules; and an etching cleaning module.

[0052] XXXI) In XXVIII) to XXX), at least two CMP modules are used to perform a chemical mechanical polishing process on the substrate to remove the metal layer on the non-recessed areas. All modules starting from the second of the two or more CMP modules can be used to planarize the step between the metal layer and the oxide film layer formed in the hole by using a slurry with a polishing speed selection ratio of oxide layer to metal layer adjusted to 1:1.

[0053] XXXII) In the XXVIII) to XXXI) of the above, the etching cleaning module can be used to remove the barrier layer formed on the bottom and sidewall of the hole by filling the recessed area of ​​the substrate with an etching cleaning liquid composition, while forming a metal thermal expansion space in a flat form.

[0054] XXXIII) In the XXVIII) to XXXII) of the above, the planarization device for the hybrid bonding structure may further include a DW cleaning module.

[0055] XXXIV) In XXVIII) to XXXIII), the DW cleaning module can function after the etched cleaning module.

[0056] XXXV) In the XXVIII) to XXXIV) of the above, the etching cleaning module may be a pad module or a brush module.

[0057] XXXVI) In the XXVIII) to XXXV) of the above, the DW cleaning module may be a brush module.

[0058] XXXVII) In XXVIII) to XXXVI), the planarization device for the hybrid bonding structure may consist of a first CMP module, a second CMP module and an etching cleaning pad module.

[0059] XXXVIII) In the XXVIII) to XXXVII) of the above, the first CMP module, the second CMP module and the etching cleaning pad module can be configured as continuous or batch.

[0060] XXXIX) In XXVIII) to XXXVIII), the planarization device for the hybrid bonding structure may consist of a first CMP module, a second CMP module, a third CMP module and an etching cleaning brush module.

[0061] XL) In the XXVIII) to XXXIX) of the above, the first CMP module, the second CMP module, the third CMP module and the etching cleaning brush module can be configured as continuous or batch.

[0062] XLI) In the XXVIII) to XL) of the above, the planarization device for the hybrid bonding structure may be composed of a first CMP module, a second CMP module, an etching cleaning pad module and an etching cleaning brush module.

[0063] XLII) In the XXVIII) to XXLI) of the above, the first CMP module, the second CMP module, the etching cleaning pad module and the etching cleaning brush module can be configured as continuous or batch.

[0064] XLIII) In the XXVIII) to XLII) of the above, the planarization device for the hybrid bonding structure may be composed of a first CMP module, a second CMP module, an etching cleaning pad module and a DW cleaning brush module.

[0065] XLIV) In the XXVIII) to XLIII) of the above, the first CMP module, the second CMP module, the etching cleaning pad module and the DW cleaning brush module can be configured as continuous or batch.

[0066] XLV) In the XXVIII) to XLIV) of the above, the planarization device for the hybrid bonding structure may include a pulse mode, a pre-bonding device and a thermal expansion device.

[0067] Invention Effects

[0068] According to the present invention, compared with the existing hybrid bond structure planarization technology that uses CMP process to remove metal layers and barrier layers on non-recessed areas, removing metal layers and barrier layers on non-recessed areas and keeping the metal layer flat only in the hole improves the uniformity of metal layer dishing and reduces metal resistance. Even without using precision equipment, it has the effect of reducing process costs through parallel chemical processing.

Implementation Method

[0074] Hereinafter, the present invention will be described in detail with reference to the drawings, but the present invention is not limited thereto.

[0075] Unless otherwise stated, the term "hybrid bonded product" as used in this invention refers to semiconductor products or display products, etc., that undergo subsequent hybrid bonding processes.

[0076] Unless otherwise stated, the term "etching cleaning composition" as used in this invention refers to a composition that can simultaneously etch and clean semiconductor products or display products that are subsequently subjected to mixed bonding processes, but is not limited to its use in etching or cleaning processes alone.

[0077] Unless otherwise stated, the term "oxide layer" as used in this invention refers to dielectric.

[0078] In the process of researching the planarization method and apparatus for hybrid bonding structures (the planarization method and apparatus for hybrid bonding structures can form the recesses required in the hybrid bonding process between the joints in a suitable shape in the semiconductor and display manufacturing process, without the rounding phenomenon caused by excessive polishing of the oxide film, and at the same time remove polishing residues present on the surface of the oxide film and the metal layer), the inventors confirmed that the above-mentioned objectives can be achieved by using a slurry and etching cleaning solution composition with a specific composition and designing the planarization process and the planarization apparatus. Based on this, the present invention was completed.

[0079] The sequence of processes for forming a hybrid bonding structure may typically include the following steps.

[0080] Silicon is selected as the material for substrate 101, and holes 102 are formed on substrate 101 by etching. Silicon dioxide or SiCN is selected as the material for oxide layer 103, and oxide layer 103 is deposited on substrate 101 by chemical vapor deposition (CVD). Titanium is selected as the material for barrier layer 104, and barrier layer 104 is deposited on oxide layer 103, bottom and sidewalls of hole 102 by physical vapor deposition (PVD). Copper is selected as the material for metal layer 105, and metal layer 105 is deposited on hole 102 by electrochemical electroplating.

[0081] The hole 102 of the hybrid bonding structure has a high aspect ratio. In order to deposit a metal layer 105 in the hole 102 in a void-free form, a thick upper deposited metal layer 105 is deposited on the barrier layer 104 by electrochemical electroplating. As shown in Figure 1 below, the hybrid bonding structure before the planarization process is shown.

[0082] The thickness of the metal layer 105 deposited on the non-recessed area can typically be from about 0.5 μm to 5 μm, but is not specific to this and can vary depending on the application.

[0083] After depositing the metal layer 105 in the hole 102 and on the non-recessed area, the next step is to remove the metal layer 105 and the barrier layer 104 deposited on the non-recessed area.

[0084] A planarization process for removing the hybrid bonding structure of the metal layer 105 and the barrier layer 104 formed on the non-recessed area in one embodiment of the present invention may include the following steps.

[0085] First step: Remove the metal layer 105 formed on the non-recessed area of ​​the substrate by chemical mechanical polishing (CMP) process.

[0086] The metal layer 105 may be all the metal layers formed on the non-recessed area and part of the metal layer formed in the hole 102.

[0087] The chemical substances used in the CMP process may vary depending on processes P1, P2, and P3. For P1, a slurry with a high Cu polishing rate is used to remove the metal layer 105 formed on the non-recessed areas. For processes P2 and P3, a slurry with a Cu:Ox selection ratio of 1:1 is suitable.

[0088] The substrate is fixed to the head and rotates together with the chuck. The platen at the lower end of the CMP rotates in the same direction as the aforementioned rotation direction. As an example, when the rotation speed is 40 RPM to 90 RPM, the barrier layer can be effectively removed.

[0089] Second step: Remove the metal layer residue, oxide layer, and barrier layer formed on the oxide layer on the non-recessed area. The thickness of the barrier layer 104 on the non-recessed area can be approximately 1 nm to 15 nm, but may vary depending on the process.

[0090] The material of the barrier layer 104 may include one or more selected from Ti, TiN, Ta, and TaN, but is not limited thereto. In addition, the chemical substances used to remove the barrier layer can be applied by using a slurry in which the polishing speed of the oxide layer and the metal layer is adjusted to a 1:1 ratio.

[0091] After the barrier layer 104 on the non-recessed area is removed, the oxide layer 103 below the barrier layer 104 will be exposed.

[0092] The material of the oxide layer 103 may include one or more selected from Si, SiO2 and SiCN, but is not limited thereto. In addition, the thickness of the oxide layer 103 may be from about 0.01 μm to 1 μm, but this may vary depending on the process.

[0093] The slurry used to remove the barrier layer may contain polishing particles, corrosion inhibitors, complexing agents and oxidants. The slurry may contain 0.05wt% to 5wt% of silicon dioxide particles, 0.001wt% to 1wt% of azole corrosion inhibitors containing one or more N groups, 0.001wt% to 0.5wt% of amino acid complexing agents and 0.05wt% to 1wt% of oxidants. In this case, the barrier layer can be effectively removed.

[0094] The substrate is fixed to the head and rotates together with the chuck. The platen at the lower end of the CMP rotates in the same direction as the aforementioned rotation direction. As an example, when the rotation speed is 40 RPM to 90 RPM, the barrier layer can be effectively removed.

[0095] Third step: Planarize the step difference between the metal layer and oxide film layer formed in the hole.

[0096] The slurry used for planarizing the metal layer 105 formed in the hole, in particular, may contain polishing particles, corrosion inhibitors, complexing agents and oxidants. The slurry may contain 0.05wt% to 5wt% of silicon dioxide particles, 0.001wt% to 1wt% of azole corrosion inhibitors containing one or more N groups, 0.001wt% to 0.5wt% of amino acid complexing agents and 0.05wt% to 1wt% of oxidants. In this case, the metal layer can be effectively planarized.

[0097] To achieve a flat upper surface, the step difference between the metal layer 105 and the oxide film layer within the hole 102 can be recovered by a CMP process to achieve planarization. Specifically, the metal layer 105 and the oxide film layer are partially polished in the same manner to remove the step difference.

[0098] The roughness of the metal layer 105 inside the hole 102 can be recovered by the CMP process to achieve planarization.

[0099] Typically, the thickness of the upper part of the metal layer 105 can be less than 50 Å.

[0100] Fourth step: Remove the barrier layer formed on the bottom and sidewalls of the hole while forming a flat space for metal thermal expansion.

[0101] In order to remove the barrier layer formed on the bottom and sidewalls of the hole while forming a flat space for metal thermal expansion, an etching cleaning process is preferably used.

[0102] The chemical substance used in the etching cleaning process may be an etching cleaning solution composition.

[0103] The etching cleaning solution composition is characterized in that it is an alkaline solution containing an etching substance, a metal corrosion inhibitor, a silicon film anti-etching agent, an alkaline compound containing hydroxyl groups, and an alkanolamine compound. In this case, the rounding phenomenon based on over-polishing is suppressed by inhibiting the etching of the oxide film, and the etching ability and cleaning ability are improved at the same time, thereby having the effect of cleaning polishing residues present on the surface of the oxide film and the metal layer.

[0104] Specifically, in the etching cleaning liquid composition of the present invention, the etching substance may be a compound containing carboxyl groups and selectively etching copper or titanium.

[0105] The etching material may be a compound containing carboxyl groups and selectively etching copper or titanium.

[0106] As an example, the etching substance may be one or more selected from aspartic acid, ammonium citrate, glycine, arginine, histidine, lysine, alanine, citric acid, aspartic acid and glutamic acid. As a specific example, it may be ammonium citrate and citric acid, etc.

[0107] The metal corrosion inhibitor may be a compound containing functional groups with high reducing power and used to prevent corrosion of copper or titanium.

[0108] The silicon film anti-etching agent may be a compound containing sulfonic acid groups used to prevent the etching of silicon oxide films (silicon, silicon oxide film, silicon nitride film and silicon carbonitride film, etc.).

[0109] The alkaline compound containing hydroxyl groups may be a compound that adjusts the pH of the etching cleaning solution composition to 8 or higher.

[0110] The etching substance may be selected from one or more of aspartic acid, ammonium citrate, glycine, arginine, histidine, lysine, alanine, citric acid, aspartic acid and glutamic acid.

[0111] Based on the total weight of the etching cleaning liquid composition, as an example, the etching substance may contain 0.1% to 10% by weight, and as a specific example, it may contain 1% to 10% by weight.

[0112] The metal corrosion inhibitor may be selected from one or more of gallic acid, mercaptosuccinic acid, resorcinol, uric acid, vanillic acid, fructose, kojic acid, 5-aminosalicylic acid and dextrose.

[0113] The metal corrosion inhibitor may contain 0.1% to 10% by weight, based on the total weight of the etching cleaning solution composition.

[0114] The silicon film anti-etching agent may be selected from one or more of benzenesulfonic acid, aminosulfonic acid, 2,4-dimethylbenzenesulfonic acid, 4-hydroxypyridine-3-sulfonic acid, p-toluenesulfonic acid, ammonium aminosulfonate and methanesulfonic acid.

[0115] The silicon film anti-etching agent may contain 0.001% to 30% by weight, based on the total weight of the etching cleaning liquid composition.

[0116] The alkaline compound containing hydroxyl groups may be selected from one or more of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrabutylammonium hydroxide, ammonium hydroxide, choline hydroxide, sodium hydroxide and potassium hydroxide.

[0117] Based on the total weight of the etching cleaning fluid composition, the alkaline compound containing hydroxyl groups may contain 1% to 25% by weight.

[0118] The alkanolamine compound may be selected from one or more of propanolamine, ethanolamine, diethanolamine, triethanolamine, 2-2-(ethylamino)ethanol, 1-amino-2-propanol, 2-(methylamino)ethanol, N,N-dimethylethanolamine, 1,3-diamino-2-propanol, 2-amino-1,3-propanediol and 2-amino-2-methyl-1-propanol.

[0119] The alkanolamine compound may contain 0.1% to 10% by weight, based on the total weight of the etching cleaning fluid composition.

[0120] The etching cleaning solution composition may contain a surfactant.

[0121] The surfactant may be selected from one or more nonionic surfactants and anionic surfactants.

[0122] The surfactant may be contained in the range of 0.001% by weight to 3% by weight, based on the total weight of the etching cleaning liquid composition.

[0123] In the etching cleaning liquid composition of the present invention, based on the total weight of the etching cleaning liquid composition, as an example, the etching substance may contain 0.1% to 10% by weight, as a specific example, 1% to 10% by weight, and as a preferred example, 1% to 5% by weight. In this case, the rounding phenomenon based on over-polishing can be suppressed by suppressing the etching of the oxide film, and the etching ability and cleaning ability can be improved at the same time, so as to be able to clean the polishing residue present on the oxide film and metal layer surface, and in the mixed bonding process, the etching cleaning liquid composition does not have an adverse effect on providing the effect of achieving excellent bonding force, while providing a recess in a suitable shape at the joint required for mixed bonding.

[0124] In the etching cleaning solution composition of the present invention, the metal corrosion inhibitor may be a compound containing functional groups with high reducing power and used to prevent corrosion of copper or titanium.

[0125] As an example, the metal preservative may be selected from one or more of gallic acid, mercaptosuccinic acid, resorcinol, uric acid, vanillic acid, fructose, kojic acid, 5-aminosalicylic acid and dextrose. As a specific example, it may be uric acid and ascorbic acid, etc.

[0126] Based on the total weight of the etching cleaning solution composition, as an example, the metal corrosion inhibitor may contain 0.1% to 10% by weight, as a specific example, 0.1% to 5% by weight, and as a preferred example, 0.1% to 3% by weight. In this case, the rounding phenomenon based on over-polishing can be suppressed by inhibiting the etching of the oxide film, while simultaneously improving etching and cleaning capabilities to clean polishing residues present on the oxide film and metal layer surfaces. Furthermore, in the hybrid bonding process, the etching cleaning solution composition does not adversely affect the effect of achieving excellent bonding strength, while providing a recess in a suitable shape at the joint required for hybrid bonding.

[0127] In the etching cleaning liquid composition of the present invention, the silicon film anti-etching agent may be a compound containing sulfonic acid groups and used to prevent silicon film etching.

[0128] As an example, the silicon film anti-etching agent may be selected from one or more of benzenesulfonic acid, aminosulfonic acid, 2,4-dimethylbenzenesulfonic acid, 4-hydroxypyridine-3-sulfonic acid, p-toluenesulfonic acid, ammonium aminosulfonate and methanesulfonic acid. As a specific example, it may be methanesulfonic acid, but is not limited thereto.

[0129] Based on the total weight of the etching cleaning solution composition, as an example, the silicon film anti-etching agent may contain 0.001% to 30% by weight, as a specific example, it may contain 0.1% to 5% by weight, and as a preferred example, it may contain 0.1% to 3% by weight. In this case, both etching and cleaning capabilities are improved to clean polishing residues present on the oxide film and metal layer surfaces, and the etching cleaning solution composition does not adversely affect the effect of achieving excellent bonding strength in the mixed bonding process, while preventing rounding caused by over-polishing by inhibiting the etching of the oxide film.

[0130] The silicon film may be a silicon oxide film, such as silicon, silicon oxide film, silicon nitride film and silicon carbonitride film.

[0131] In the etching cleaning solution composition of the present invention, the alkaline compound containing hydroxyl groups may be a compound that adjusts the pH value of the etching cleaning solution composition to 8 or higher.

[0132] As an example, the alkaline compound containing hydroxyl groups may be selected from one or more of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrabutylammonium hydroxide, ammonium hydroxide, choline hydroxide, sodium hydroxide and potassium hydroxide. As a specific example, it may be tetramethylammonium hydroxide and tetraethylammonium hydroxide, etc.

[0133] Based on the total weight of the etching cleaning solution composition, as an example, the alkaline compound containing hydroxyl groups may contain 1% to 25% by weight, as a specific example, 5% to 20% by weight, and as a preferred example, 8% to 20% by weight. In this case, the rounding phenomenon based on over-polishing can be suppressed by inhibiting the etching of the oxide film, while simultaneously improving etching and cleaning capabilities. This enables the cleaning of polishing residues present on the oxide film and metal layer surface, and does not adversely affect the etching cleaning solution composition that provides excellent bonding strength during the mixed bonding process. Furthermore, it addresses the drawback of excessive copper etching when the pH is neutral or acidic.

[0134] In the etching cleaning solution composition of the present invention, the alkanolamine compound can decompose polishing residues present on the surface of the oxide film and the metal layer.

[0135] For reference, the alkanolamine is characterized in that it is a substance commonly used as a pH adjuster in the art, but for the purposes of this invention, the pH value is different from that described above, and it produces the disadvantage of excessive copper etching when in a neutral or acidic environment. Therefore, it is composed of a more alkaline environment. In particular, even if an excessive amount of alkanolamine is added, it is equivalent to a substance that is difficult to provide the pH value to the strongly alkaline environment of pH 12 or 14 or more required in this invention.

[0136] For example, the alkanolamine compound may be one or more selected from propanolamine, ethanolamine, diethanolamine, triethanolamine, 2-2-(ethylamino)ethanol, 1-amino-2-propanol, 2-(methylamino)ethanol, N,N-dimethylethanolamine, 1,3-diamino-2-propanol, 2-amino-1,3-propanediol and 2-amino-2-methyl-1-propanol. As a specific example, it may be ethanolamine.

[0137] Based on the total weight of the etching cleaning solution composition, as an example, the alkanolamine compound may contain 0.1% to 10% by weight, as a specific example, 1% to 10% by weight, and as a preferred example, 3% to 8% by weight. In this case, the rounding phenomenon based on over-polishing can be suppressed by suppressing the etching of the oxide film, while simultaneously improving etching and cleaning capabilities. Furthermore, in the mixed bonding process, the etching cleaning solution composition does not adversely affect the effect of achieving excellent bonding strength, while effectively cleaning polishing residues present on the oxide film and metal layer surface.

[0138] At this time, the substances used for cleaning may include polishing materials and pad debris used in polishing and various residues that may be generated during the process.

[0139] At this time, the polishing material can be any of the materials known in the art, such as silicon dioxide and cerium dioxide. In addition, for example, the oxide film can be silicon, silicon oxide film, silicon nitride film, and silicon carbonitride film.

[0140] The etching cleaning solution composition may also contain a surfactant.

[0141] The surfactant may be selected from one or more nonionic surfactants and anionic surfactants.

[0142] For example, the nonionic surfactant may be a copolymer comprising polyethylene glycol, polypropylene glycol, polyoxyethylene, polyalkyl oxide, polyepoxyethylene, sorbitan polyoxyethylene hexaoleate, polyoxyethylene dodecyl ether, polyoxyethylene octylphenyl ether, dodecenyl succinate monodiethanolamine and alkyl polyglucoside, or may be Dow's TERGITOL™ TMN-6, TERGITOL™ 15-S-5 and TERGITOL™ NP-40, etc.

[0143] For example, the anionic surfactant may be a copolymer comprising alkyl ether phosphate, aryl ether phosphate, ammonium dodecyl sulfate, sodium dodecylbenzene sulfonate, ammonium dodecylbenzene sulfonate, sodium polyoxyethylene alkyl aryl sulfate, sodium polyoxyethylene alkyl sulfate, disodium dodecyl polyoxyethylene ether sulfosuccinate, sodium dodecyl polyoxyethylene ether sulfate, or may be Dow's TERGITOL™ W-610, TRITON's H-11, TRITON™ DF-20, etc.

[0144] Based on the total weight of the etching cleaning solution composition, as an example, the surfactant may contain 0.001% to 3% by weight, as a specific example, 0.001% to 1% by weight, and as a preferred example, 0.001% to 0.02% by weight. In this case, it does not adversely affect the provided etching cleaning solution composition, while effectively cleaning polishing residues present on the oxide film and metal layer surface.

[0145] As an example, the pH value of the etching cleaning solution composition can be in the range of 8 to 14, and more specifically, in the range of 9 to 14, preferably in the range of about 12 to 14. In this case, the rounding phenomenon based on over-polishing can be suppressed by inhibiting the etching of the oxide film, while simultaneously improving etching ability and cleaning ability. Furthermore, in the mixed bonding process, the etching cleaning solution composition does not adversely affect the effect of achieving excellent bonding force, and at the same time provides the effect of effectively cleaning polishing residues present on the oxide film and metal layer surface.

[0146] The pH value of the etching cleaning solution composition may be in the range of 8 to 14.

[0147] The fourth step can be carried out by chemical impregnation or physical washing.

[0148] The etching cleaning solution composition is used to planarize the metal layer included in the hole by etching at an etching rate of less than 50 Å / min.

[0149] The etching cleaning solution composition can remove polishing residues present on the surface of the oxide layer and the metal layer.

[0150] The hybrid bonding structure planarization process can be performed continuously and / or in batches by performing the following steps after the fourth step: a step of activating the surface with a pulse mode; a step of pre-bonding the die and wafer; and a step of densely bonding the bonding structure between the die and the wafer by thermal expansion.

[0151] As an example, the shape of the joint is shown in Figure 2 below.

[0152] Figure 2 below is a diagram showing the structure in which a recess is formed in the mixed bonding component without the appearance of a rounding phenomenon of oxide film when the etching cleaning solution composition of the embodiment of the present invention is used in the chemical mechanical planarization or polishing (CMP) process. Figures 1 and 3 below are diagrams showing the rounding phenomenon observed due to over-polishing of oxide film when the prior art slurry composition is used in the CMP process.

[0153] When the prior art slurry composition (A) is used, an aqueous solution with a pH of 7.6 containing 0.5 wt% silica particles, 0.01 wt% BTA (preservative, benzotriazole), 0.005 wt% maleic acid, 0.05 wt% hydrogen peroxide and the balance water is used. The copper polishing speed is 52 Å / min, the TEOS (tetraethyl orthosilicate) polishing speed is 213 Å / min, and the Cu / TEOS selectivity ratio reaches 1:5, resulting in protrusion of the Cu pore shape.

[0154] As another example, when the prior art slurry composition (B) is used in an aqueous solution with a pH of 7.6 containing 0.5 wt% silicon dioxide particles, 0.01 wt% BTA, 0.005 wt% maleic acid, 1.0 wt% hydrogen peroxide and the balance water, the copper polishing speed is 617 Å / min, the TEOS polishing speed is 217 Å / min, and the Cu / TEOS selectivity ratio reaches 3:1, resulting in a dishing of the Cu pore shape.

[0155] As shown in Figures 1 and 3 below, when a rounding phenomenon is observed, it is difficult to provide complete bonding force between the joints in the hybrid bonding process, which is a necessary subsequent process.

[0156] Therefore, when the etching cleaning solution composition of the present invention is used, it is possible to produce uniform dishing for mixing the bonded metal layers.

[0157] The selective etching content of the metal layer can be adjusted in angstrom units by adjusting the content or dilution ratio of the composition and the process time.

[0158] The etching cleaning solution composition may be filled using a pad, a brush, or both. As an example, Figure 5a below shows the use of a pad, Figure 5b shows the use of a brush, and Figure 5c shows the use of a pad followed by a brush.

[0159] After the etching cleaning, a DW cleaning step may also be included. As an example, Figure 5d below is a diagram of applying the etching cleaning solution composition to a pad and then performing DW cleaning with a brush.

[0160] As an example, the metal thermal expansion space may be a metal layer with a depth of less than 100 Å from the uppermost point, preferably less than 50 Å, and the result may provide a flat rectangular structure.

[0161] Ideally, the lateral width of the metal thermal expansion space is the width of the hole 102. For example, it can be less than 5 μm, preferably 0.5 μm to 5 μm, but this may vary depending on the process.

[0162] The substrate is fixed to the head and rotates together with the chuck. The platen at the lower end of the CMP rotates in the same direction as the aforementioned rotation direction. As an example, when the rotation speed is 40 RPM to 90 RPM, the barrier layer can be effectively removed. As an example, when the rotation speed of the substrate is 40 RPM to 90 RPM, a space for metal thermal expansion can be effectively formed. The removal profile is related to the rotation speed. Higher rotation speeds induce higher substrate edge removal speeds, and lower rotation speeds induce lower substrate edge removal speeds.

[0163] The etching cleaning solution composition supply nozzle can be moved during the process. The etching cleaning speed is affected by the nozzle scanning speed and the scanning area. The optimal scanning speed can be below 100 mm / s, specifically, it can be from 40 mm / s to 100 mm / s.

[0164] The planarization apparatus for the hybrid bonding structure of the present invention includes: an Equipment Front End Module (EFEM), a buffer station, a process robot, two or more stacked CMP modules 1001, a measurement module, a pad module 1007, a brush module 1009, an etching cleaning module 1003, and a DW cleaning module 1005. The measurement module, the pad module 1007, and the brush module 1009 may be stacked on the etching cleaning module 1003 and / or the DW cleaning module 1005 or operate simultaneously with the etching cleaning module 1003 and / or the DW cleaning module 1005.

[0165] The device further includes: an electrical module, a gas module and a pipeline module.

[0166] In order to remove the metal layer on the non-recessed area of ​​the substrate, the CMP module 1001 is used to perform a chemical mechanical polishing process on the substrate. All modules starting from the second of the two or more CMP modules 1001 can be used to planarize the step between the metal layer and the oxide film layer formed in the hole by using a slurry with the polishing speed selection ratio of oxide layer to metal layer adjusted to 1:1.

[0167] The etching cleaning module can be used to remove the barrier layer formed on the bottom and sidewalls of the hole while forming a flat metal thermal expansion space by filling the recessed area of ​​the substrate with an etching cleaning liquid composition.

[0168] The planarization device for the hybrid bonding structure may further include a DW cleaning module.

[0169] The DW cleaning module can be run after the etching cleaning module.

[0170] The etching cleaning module may be a pad module or a brush module.

[0171] The DW cleaning module can be a brush module.

[0172] According to one embodiment of the present invention, as shown in Figures 4a and 5a below, the planarization device for the hybrid bonding structure may consist of a first CMP module, a second CMP module and an etching cleaning pad module.

[0173] The first CMP module, the second CMP module and the etching cleaning pad module can be composed of continuous or batch processes, and from the perspective of process efficiency, continuous processes are preferred. Figure 5a corresponds to continuous operation.

[0174] The first CMP module 1001 performs the operation of removing the metal layer (Cu) and making the step difference between the metal layer and the oxide film layer (Cu / Ox) consistent.

[0175] All modules starting from the second of the two or more CMP modules 1001 can simultaneously perform steps (b) and (c) shown in Figure 5a below for 60 seconds using slurry supplied through the slurry supply nozzle at a selection ratio of 1:1. At this time, the working time can be in the range of 20 seconds to 100 seconds.

[0176] As an example, when the slurry (C) with a selectivity of 1:1 was used, and an aqueous solution with a pH of 7.6 containing 0.5 wt% silicon dioxide particles, 0.01 wt% BTA, 0.008 wt% maleic acid, 0.35 wt% hydrogen peroxide and the balance water was used, the copper polishing speed was 208 Å / min, the TEOS polishing speed was 217 Å / min, the Cu / TEOS selectivity reached about 1:1, and the results confirmed that the Cu pore shape had a consistent step, and the actual measured roughness was confirmed to be about 1.4 Å.

[0177] Next, the etching cleaning module 1003 may overlap with the pad module 1007, and step (d) shown in FIG5a below is performed for 60 seconds using an etching cleaning fluid composition supplied from the etching cleaning fluid supply nozzle. At this time, the etching cleaning fluid composition uses the aforementioned composition, and the working time may be in the range of 20 seconds to 100 seconds.

[0178] The results show that, according to the flowchart shown in FIG5a, the substrate after the planarization process using the planarization apparatus achieves a structure having the planarized metal thermal expansion space shown in FIG2. As an example, the lateral width of the metal thermal expansion space in the hole is 1.5 μm, and the longitudinal depth is 50 Å from the topmost point of the oxide layer, but it is not limited to this.

[0179] According to another embodiment of the present invention, as shown in Figures 4b and 5b below, the planarization device for the hybrid bonding structure may consist of a first CMP module, a second CMP module, a third CMP module and an etching cleaning brush module.

[0180] The first CMP module, the second CMP module, the third CMP module and the etching cleaning brush module can be composed of continuous or batch processes, and from the perspective of process efficiency, continuous processes are preferred. Figure 5b corresponds to continuous operation.

[0181] The first CMP module 1001 performs the operation of removing the metal layer (Cu) and making the step difference between the metal layer and the oxide film layer (Cu / Ox) consistent.

[0182] All modules starting from the second of the two or more CMP modules 1001 (corresponding to the second and third CMP modules in Figures 5a to 5d) can sequentially perform steps (b) and (c) shown in Figure 5b below for 60 seconds using slurry supplied through a slurry supply nozzle at a selection ratio of 1:1. The working time can then be in the range of 20 to 100 seconds.

[0183] Next, the etching cleaning module 1003 may overlap with the brush module 1009, and the etching cleaning fluid composition supplied from the etching cleaning fluid supply nozzle shall be used for 60 seconds to perform step (d) shown in FIG5b below. At this time, the etching cleaning fluid composition uses the aforementioned composition, and the working time may be in the range of 20 seconds to 100 seconds.

[0184] The results show that, according to the flowchart shown in FIG5b, the substrate after the planarization process using the planarization apparatus achieves a structure having the planarized metal thermal expansion space shown in FIG2. Specifically, the lateral width of the metal thermal expansion space within the hole is 1.5 μm, and the longitudinal depth is 50 Å from the topmost point of the virtually drawn oxide layer.

[0185] According to another embodiment of the present invention, as shown in Figures 4c and 5c below, the planarization device for the hybrid bonding structure may be composed of a first CMP module, a second CMP module, an etching cleaning pad module and an etching cleaning brush module.

[0186] The first CMP module, the second CMP module, the etching cleaning pad module and the etching cleaning brush module can be composed of continuous or batch processes, and from the perspective of process efficiency, continuous processes are preferred. Figure 5c corresponds to continuous operation.

[0187] The first CMP module 1001 performs the operation of removing the metal layer (Cu) and making the step difference between the metal layer and the oxide film layer (Cu / Ox) consistent.

[0188] The second CMP module 1001 can simultaneously perform steps (b) and (c) shown in Figure 5c below for 60 seconds using slurry supplied through a slurry supply nozzle at a selection ratio of 1:1. At this time, the working time can be in the range of 20 seconds to 100 seconds.

[0189] Next, the etching cleaning module 1003 may overlap with the pad module 1007 and the brush module 1009, and the step (d) shown in FIG5c below is performed sequentially for 60 seconds using an etching cleaning fluid composition supplied from the etching cleaning fluid supply nozzle. At this time, the etching cleaning fluid composition uses the aforementioned composition, and the working time may be in the range of 20 seconds to 100 seconds.

[0190] The results show that, according to the flowchart shown in Figure 5c, the substrate after the planarization process using the planarization apparatus achieves a structure with the planarized metal thermal expansion space shown in Figure 2. Specifically, the lateral width of the metal thermal expansion space within the hole is 1.5 μm, and the longitudinal depth is 50 Å from the topmost point of the virtually drawn oxide layer.

[0191] According to one embodiment of the present invention, as shown in Figures 4d and 5d below, the planarization device for the hybrid bonding structure may be composed of a first CMP module, a second CMP module, an etching cleaning pad module and a DW cleaning brush module.

[0192] The first CMP module, the second CMP module, the etching cleaning pad module and the DW cleaning brush module can be composed of continuous or batch processes, and from the perspective of process efficiency, continuous processes are preferred. Figure 5d corresponds to continuous operation.

[0193] The first CMP module 1001 performs the operation of removing the metal layer (Cu) and making the step difference between the metal layer and the oxide film layer (Cu / Ox) consistent.

[0194] The second CMP module 1001 can simultaneously perform steps (b) and (c) shown in Figure 5d below for 60 seconds using slurry supplied through a slurry supply nozzle at a selection ratio of 1:1. At this time, the working time can be in the range of 20 seconds to 100 seconds.

[0195] Next, the etching cleaning module 1003 may overlap with the pad module 1007, and step (d) shown in Figure 5d below is performed sequentially for 60 seconds using an etching cleaning fluid composition supplied from the etching cleaning fluid supply nozzle. At this time, the etching cleaning fluid composition uses the aforementioned composition, and the working time may be in the range of 20 seconds to 100 seconds.

[0196] Then, the DW cleaning module 1005 may overlap with the brush module 1009, and the step (e) shown in Figure 5d below is performed sequentially for 60 seconds by using deionized water supplied from the DW (deionized water) supply nozzle. At this time, the working time may be 10 seconds to 60 seconds respectively.

[0197] The results show that, according to the flowchart shown in Figure 5d, the substrate after the planarization process using the planarization apparatus achieves a structure with the planarized metal thermal expansion space shown in Figure 2. Specifically, the lateral width of the metal thermal expansion space within the hole is 1.5 μm, and the longitudinal depth is 50 Å from the topmost point of the virtually drawn oxide layer.

[0198] The planarization device for the hybrid bonding structure can be connected to the pulse mode, the pre-bonding device and the thermal expansion device to perform the post-processing steps of hybrid bonding.

[0199] Hereinafter, the substrate transfer sequence will be schematically explained in the planarization apparatus shown in Figures 5a to 5d (left side views of Figures 5a, 5b, 5c, and 5d).

[0200] The EFEM robot picks up the unprocessed substrate from the loading section and transfers it to the buffer station. The process robot picks up the substrate from the buffer station and transfers it to the measurement module for measuring the thickness of the metal layers. After the measurement module measures the thickness of the metal layers, the process robot picks up the substrate from the measurement module and transfers it to one of the CMP modules 1001. In the CMP module 1001, the CMP process is applied to the substrate to remove all metal layers on non-recessed areas and a portion of the upper metal layers inside the holes. After completing the CMP process, the process robot picks up the substrate from the CMP module 1001 and transfers it to the second CMP module 1001. The second CMP module 1001 receives slurry supplied from the slurry supply nozzle while the CMP process is applied to the substrate to remove the barrier layer and oxide layer on non-recessed areas and planarize the metal layers inside the holes (the above is the same as in Figures 5a, 5b, 5c, and 5d below).

[0201] Next, as shown in Figure 5a below, after completing the second CMP process, the process robot picks up the substrate from the second CMP module 1001 and transfers it to the etching cleaning pad module 1007. The etching cleaning pad module 1007 receives the etching cleaning solution composition supplied from the etching cleaning solution composition supply nozzle while the etching cleaning process is applied to the substrate to remove the sidewalls and lower barrier layers of the holes, while forming a metal thermal expansion space at the upper end of the metal layer within the holes.

[0202] Then, the process robot picks up the substrate from the etching cleaning pad module 1007 and transfers the substrate to the buffer station. Finally, the EFEM robot picks up the substrate from the buffer station and transfers the substrate to the substrate loading section again.

[0203] According to another implementation example, as shown in Figure 5b below, after completing the second CMP process, the process robot picks up the substrate from the second CMP module 1001 and transfers it to the third CMP module 1001. While the third CMP module 1001 receives the slurry supplied from the slurry supply nozzle, the CMP process is applied to the substrate to remove the barrier layer and oxide layer on the non-recessed areas and further planarize the metal layer in the holes.

[0204] After completing the third CMP process, the process robot picks up the substrate from the second CMP module 1001 and transfers it to the etching cleaning brush module 1009. The etching cleaning brush module 1009 receives the etching cleaning solution composition supplied from the etching cleaning solution composition supply nozzle while the etching cleaning process is applied to the substrate to remove the sidewalls and lower barrier layers of the holes, while forming a metal thermal expansion space at the upper end of the metal layer within the holes.

[0205] Then, the process robot picks up the substrate from the etching and cleaning brush module 1009 and transfers the substrate to the buffer station. Finally, the EFEM robot picks up the substrate from the buffer station and transfers the substrate to the substrate loading section again.

[0206] According to another implementation example, as shown in Figure 5c below, after completing the second CMP process, the process robot picks up the substrate from the second CMP module 1001 and transfers it to the etching cleaning pad module 1007. The etching cleaning pad module 1007 receives the etching cleaning liquid composition supplied from the etching cleaning liquid composition supply nozzle while the etching cleaning process is applied to the substrate to remove the sidewalls and lower barrier layers of the holes, while forming a metal thermal expansion space at the upper end of the metal layer within the holes.

[0207] Next, the process robot picks up the substrate from the etching cleaning pad module 1007 and transfers it to the etching cleaning brush module 1009. The etching cleaning brush module 1009 receives the etching cleaning liquid composition supplied from the etching cleaning liquid composition supply nozzle while the etching cleaning process is applied to the substrate to remove the sidewalls and lower barrier layer of the hole, while forming a metal thermal expansion space at the upper end of the metal layer in the hole.

[0208] Then, the process robot picks up the substrate from the etching and cleaning brush module 1009 and transfers the substrate to the buffer station. Finally, the EFEM robot picks up the substrate from the buffer station and transfers the substrate back to the substrate loading section.

[0209] According to another implementation example, as shown in Figure 5d below, after completing the second CMP process, the process robot picks up the substrate from the second CMP module 1001 and transfers it to the etching cleaning pad module 1007. The etching cleaning pad module 1007 receives the etching cleaning liquid composition supplied from the etching cleaning liquid composition supply nozzle while the etching cleaning process is applied to the substrate to remove the sidewalls and lower barrier layers of the holes, while forming a metal thermal expansion space at the upper end of the metal layer within the holes.

[0210] Next, the process robot picks up the substrate from the etching cleaning pad module 1007 and transfers it to the DW cleaning module 1005. The DW cleaning module 1005 cleans the substrate while helping to form a more flattened space by filling the metal layer thermal expansion space within the hole with DW.

[0211] Then, the process robot picks up the substrate from the DW cleaning module 1005 and transfers the substrate to the buffer station. Finally, the EFEM robot picks up the substrate from the buffer station and transfers the substrate to the substrate loading section again.

[0212] Apart from the substrate transfer sequence, other substrate transfer sequences can be performed by using a device according to the requirements of other processes.

[0213] In order to achieve high-speed and uniform removal, preferably, the removal or polishing of the substrate material is not composed of purely physical or purely chemical actions, but rather by a synergistic combination of both.

[0214] Therefore, chemical impregnation and physical washing are methods commonly used in this technical field, and any method can be used. Since these are well known in this technical field, detailed descriptions will be omitted.

[0215] In particular, it can be confirmed from the following examples that the etching effect obtained when using the etching cleaning liquid composition applicable to the present invention may include: providing an etching rate of 50 Å / min or less for the metal layer included in the semiconductor device or display device; forming a recess on the metal layer with an appropriate thickness of 20 Å or less; and forming a surface roughness of 5 Å or less for the silicon film, etc.

[0216] In this case, the cleaning effect may include: removing more than 99% or almost all of the polishing residues present on the surface of the oxide film and metal layer included in the semiconductor device or display device.

[0217] Among them, semiconductor devices refer to semiconductor memory such as DRAM, NAND, especially high bandwidth memory (HBM), graphics double data rate (GDDR), system semiconductor devices such as central processing unit (CPU), application processor (AP), or their heterogeneous semiconductor devices, but are not limited thereto.

[0218] In addition, display devices refer to image sensors such as CMOS image sensors (CIS), but are not limited to them.

[0219] Therefore, when the planarization method and apparatus for the hybrid bonding structure of the present invention are used, when a depression is formed between the joints required for hybrid bonding, not only can the rounding phenomenon caused by excessive polishing of the oxide film be suppressed and polishing residues present on the surface of the oxide film and the metal layer be removed at the same time, but the process cost can be reduced while exhibiting the effect of improved bonding force of the hybrid bonding process.

[0220] Furthermore, with existing CMP slurries, it is difficult to adjust the selection ratio of the polishing speed of the oxide film to that of Cu, thus making it impossible to control the appropriate dish-shaped depression of the copper via. This is because, in the selection ratio of oxide film to copper, if the polishing speed of the oxide film is too fast compared to the polishing speed of the copper, the required dish-shaped depression of the copper via electrode cannot be formed, and therefore the bonding process cannot be performed. Conversely, if the polishing speed of the copper is too fast, the deep dish-shaped depression of the copper via electrode will prevent the copper via electrode from being bonded during the bonding process. This problem can be solved by using the planarization method and apparatus for the hybrid bonding structure of the present invention.

[0221] Hereinafter, preferred embodiments are presented to aid in understanding the present invention. However, the following embodiments are only used to illustrate the present invention. It will be obvious to those skilled in the art that various changes and modifications can be made within the scope and technical concept of the present invention, and such changes and modifications also fall within the scope of the appended patent applications.

[0222] Etching cleaning solution composition: Examples 1 to 10, Comparative Examples 1 to 9

[0223] The etching cleaning solution compositions used in Examples 1 to 10 and Comparative Examples 1 to 9 were prepared respectively.

[0224] Specifically, etching cleaning solutions with the compositions shown in Tables 1, 2, 4, 5, and 6 below were prepared prior to mixed bonding. After preparation, the solutions were diluted in deionized water at a ratio of 100:1. The temperature of each cleaning solution was set to 25°C.

[0225] Each compound was prepared in weight % and contained residual water. In particular, except that the pH of tetraethylammonium hydroxide (TEAH), used as a pH adjuster, was 6 in Comparative Example 7 and 11.5 in Comparative Example 8, all other formulations were added in different weight % to adjust the pH of all other formulations to the same 13.

[0226] Using the etching cleaning solution composition, the suppression of 10 nm copper disc-shaped depressions and the rounding phenomenon of silicon oxide film (SiO) were evaluated by taking the silicon oxide film (SiO) and copper electrode portion shown in Figures 4a to 4d and 5a to 5d as objects.

[0227] At this point, as a performance evaluation, the etching rate of copper, the etching rate of silicon oxide film, the roughness change of silicon oxide film (before-after), the cleaning power of silicon dioxide polishing material, and the cleaning power of organic residues were compared by using immersion and brushing methods, and the measurement methods are as follows:

[0228] <Etching rate of copper> ((thickness before copper evaluation) - (thickness after copper evaluation)) / evaluation time [Å / min]

[0229] The etching rate of copper was evaluated by measuring the thickness of copper using a surface resistivity meter (AIT Corporation, CMT-SR5000).

[0230] (1) After cutting the copper into 2cm×2cm pieces, pre-treatment is performed to remove the copper oxide film.

[0231] (2)The thickness before evaluation was measured by a surface resistivity measuring instrument.

[0232] (3)After the cleaning solution is in contact with the copper for a certain period of time by immersion or brushing, rinse with pure water and dry the surface with nitrogen.

[0233] (4)The thickness of the evaluated copper was measured by a surface resistivity meter.

[0234] <Etching rate of silicon oxide film>

[0235] ((thickness of silicon oxide film before evaluation) - (thickness of silicon oxide film after evaluation)) / evaluation time [Å / min].

[0236] The etching rate of the silicon oxide film was evaluated by measuring the thickness of the silicon oxide film using an ellipsometry (ULAM, M-2000). (1) The silicon oxide film was cut into 2cm×2cm pieces and then pretreated to remove the natural oxide film.

[0237] (2)The thickness before evaluation was measured by ellipsometer.

[0238] (3)After the cleaning solution is in contact with the silicon oxide film for a certain period of time by immersion or brushing, it is rinsed with pure water and dried with nitrogen.

[0239] (4)The thickness of the evaluated silicon oxide film was measured by a surface resistivity meter.

[0240] <Roughness variation of silicon oxide film>

[0241] (Roughness before evaluation of silicon oxide film) - (Roughness after evaluation of silicon oxide film).

[0242] <-0.01nm: Roughness increases

[0243] >+0.01nm: Roughness reduction

[0244] -0.01~+0.01nm: No change

[0245] The roughness variation of the silicon oxide film was analyzed using an atomic force microscope (Park Systems, XE15).

[0246] (1)After cutting the silicon oxide film into 2cm×2cm pieces, pre-treatment is performed to remove the natural oxide film.

[0247] (2)The roughness before evaluation was measured by atomic force microscopy.

[0248] (3)After the cleaning solution is in contact with the silicon oxide film for a certain period of time by immersion or brushing, it is rinsed with pure water and dried with nitrogen.

[0249] (4)The roughness of the evaluated silicon oxide film was measured by atomic force microscopy.

[0250] <Cleaning power of silicon dioxide polishing materials for copper>

[0251] (Width of silica polishing material when contaminated with silica polishing material) - (Width of silica polishing material after evaluation) / (Width of silica polishing material when contaminated with silica polishing material) × 100 (%); Particle Removal Efficiency (PRE).

[0252] O: Above 99.5%, △: 99.0%~99.5%, X: Below 99.0%.

[0253] The silicon dioxide polishing material present on the copper surface was analyzed using a scanning electron microscope (Hitachi, S4800).

[0254] (1) After cutting the copper into 2cm×2cm pieces, pre-treatment is performed.

[0255] (2) After impregnating the polishing material containing silicon dioxide polishing material and simulating silicon dioxide contamination, the width of the silicon dioxide polishing material relative to the analysis width is calculated by means of a program using a scanning electron microscope.

[0256] (3)After the cleaning solution is in contact with the copper film for a certain period of time by immersion or brushing, it is rinsed with pure water and dried with nitrogen.

[0257] (4)After evaluation, calculate the area of ​​residual silicon dioxide on the copper surface.

[0258] (5)Calculate PRE.

[0259] <Cleansing power of silica polishing materials in silica films>

[0260] (Width of silica polishing material when contaminated with silica polishing material) - (Width of silica polishing material after evaluation) / (Width of silica polishing material when contaminated with silica polishing material) × 100 (%); Particle Removal Efficiency (PRE).

[0261] O: Above 99.0%, △: 97.0%~99.0%, X: Below 97.0%.

[0262] The silicon dioxide polishing material present on the surface of the silicon oxide film was analyzed using a scanning electron microscope (Hitachi, S4800).

[0263] (1)After cutting the silicon oxide film into 2cm×2cm pieces, pretreatment is performed.

[0264] (2) After impregnating the polishing material containing silicon dioxide polishing material and simulating silicon dioxide contamination, the width of the silicon dioxide polishing material relative to the analysis width is calculated by means of a program using a scanning electron microscope.

[0265] (3)After the cleaning solution is in contact with the silicon oxide film for a certain period of time by immersion or brushing, it is rinsed with pure water and dried with nitrogen.

[0266] (4)After evaluation, calculate the area of ​​residual silicon dioxide on the surface of the silicon oxide film.

[0267] (5)Calculate PRE.

[0268] <Cleansing power for organic residues>

[0269] (Number of organic particles remaining after cleaning of organic matter).

[0270] O: 0EA, △: below 50EA, X: above 50EA.

[0271] Organic particles present on the surface of copper and silicon oxide films were analyzed using a scanning electron microscope (Hyrox, KH-8700).

[0272] (1) After cutting the copper or silicon oxide film into 2cm×2cm pieces, perform pretreatment.

[0273] (2)Add organic powder into the spray in IPA and then spray it onto the film.

[0274] (3)After the cleaning solution is in contact with the copper or silicon oxide film for a certain period of time by immersion or brushing, it is rinsed with pure water and dried with nitrogen.

[0275] (4)After evaluation, count the number of organic particles remaining on the surface of the copper or silicon oxide film.

[0276] <Confirmation of Copper Oxide Film Formation>

[0277] After evaluation, in order to confirm whether an oxide film was formed on the copper, the elemental intensities of copper (Cu) and oxygen (O) were confirmed using an X-ray fluorescence spectrometer (XRF, Rigaku Corporation, ZSX Primus 400).

[0278] (1) After cutting the copper wafer into 2cm×2cm sizes, perform pretreatment.

[0279] (2)Before evaluation, the intensity of copper and oxygen was confirmed using energy dispersive X-ray fluorescence spectrometry.

[0280] (3)Immerse in cleaning solution for 1 hour.

[0281] (4)After evaluation, confirm the strength of copper and oxygen.

[0282] Table 1 composition (% by weight, balance is ultrapure water) compound Example 1 Example 2 Example 3 Example 4 Etched material Citric acid 5.0 Ammonium citrate 1.0 Glycine 1.0 Arginine 1.0 Metal corrosion inhibitors Uric acid 1.5 1.5 1.5 1.5 Kojic acid Ascorbic acid Silicon film etch resist MSA 1.0 1.0 1.0 1.0 Sulfamic acid Ammonium sulfamate Basic compounds containing hydroxyl groups Tetraethylammonium hydroxide (TEAH) 18.8 12.6 12.4 11.8 organic solvents Ethanolamine (MEA) 5.0 5.0 5.0 5.0 Impregnation evaluation results Cu E / R [Å / min] 32.79 30.27 43.80 87.29 Oxide E / R [Å / min] 0.14 0.09 0.12 0.18 Oxide Roughness (Increase / Decrease Before / After Evaluation) reduce No change No change reduce Cleaning power (Silicon dioxide) Cu △ X O △ oxides △ △ X △ Cleaning power (Organic matter) Cu O X X X oxides O △ X △ Brush Scrubbing Evaluation Results Cu E / R [Å / min] 20.69 5.09 0.00 31.44 Oxide E / R [Å / min] 0.00 0.12 0.00 0.00 Oxide roughness (increase / decrease before / after evaluation) reduce reduce reduce No change Cleaning power (Silicon dioxide) Cu O X X X oxides O △ △ O Cleaning power (Organic matter) Cu O X O X oxides O O O O

[0283] Table 1 confirms that the etching rate of the metal layer (copper) is adjusted according to the type of etching material. Furthermore, it is confirmed that the adjustment of the copper etching rate is not limited to the type of etching material, but can also be adjusted according to process conditions (time, temperature, and cleaning method), the content of the etching material, and the dilution ratio of deionized water.

[0284] As a specific example, in the additional embodiment 1, if the immersion evaluation is evaluated for 30 seconds, a copper depression with a thickness of 15 angstroms can be formed. However, the brushing evaluation results show that the copper etching rate is lower than that of the immersion evaluation results. This is because not enough time was given during the copper etching process.

[0285] Moreover, depending on the characteristics of the components (such as polarity and hydrophilicity), etching may not occur during the brushing process. Therefore, if copper indentations are sufficiently created by CMP, further copper etching can be prevented by using the etching cleaning solution composition of Additional Example 3.

[0286] Table 2 Composition (% by weight, balance is ultrapure water) compound Example 1 Example 5 Example 6 Etched material Citric acid 5.0 5.0 5.0 Ammonium citrate Glycine Arginine Metal corrosion inhibitors uric acid 1.5 Kojic acid 1.5 ascorbic acid 1.5 Silicon film etch resist MSA 1.0 1.0 1.0 Aminosulfonic acid Ammonium aminosulfonate Basic compounds containing hydroxyl groups Tetraethylammonium hydroxide (TEAH) 18.8 19.3 19.7 organic solvents Ethanolamine (MEA) 5.0 5.0 5.0 Impregnation evaluation results Cu E / R [Å / min] 32.79 5.17 3.93 Oxide E / R [Å / min] 0.14 0.03 0.26 Oxide roughness (increase / decrease before / after evaluation) reduce No change Increase Cleaning power (Silicon dioxide) Cu △ X X oxides △ △ △ Cleaning power (Organic matter) Cu O X △ oxides O O X Scrubbering evaluation results Cu E / RÅ / minute] 20.69 10.52 25.88 Oxide E / R [Å / min] 0.00 0.00 0.00 Oxide roughness (increase / decrease before / after evaluation) reduce reduce No change Cleaning power (Silicon dioxide) Cu O X X oxides O △ O Cleaning power (Organic matter) Cu O X △ oxides O O O

[0287] The intensity of copper (Cu) and oxygen (O) elements in pure copper wafers and Examples 1, 5 and 6 was measured under vacuum conditions.

[0288] Table 3 XRF intensity pure copper wafers Example 1 Example 5 Example 6 Cu 1852.314 1798.824 1824.138 1774.988 O 0.13378 0.088942 0.087076 0.093016

[0289] As shown in Table 2, the oxygen intensity of Examples 1, 5 and 6 decreased after evaluation. As shown in Table 3, it can be confirmed that no copper oxide film was formed.

[0290] Table 4 Composition (% by weight, balance is ultrapure water) compound Example 1 Example 7 Example 8 Comparative Example 1 Etched material Citric acid 5.0 5.0 5.0 5.0 Ammonium citrate Glycine Arginine Metal corrosion inhibitors uric acid 1.5 1.5 1.5 1.5 Kojic acid ascorbic acid Silicon film etch resist MSA 1.0 Aminosulfonic acid 1.0 Ammonium aminosulfonate 1.0 Basic compounds containing hydroxyl groups Tetraethylammonium hydroxide (TEAH) 18.8 18.5 18.4 13.9 organic solvents Ethanolamine (MEA) 5.0 5.0 5.0 5.0 Impregnation evaluation results Cu E / R [Å / min] 32.79 17.76 15.56 16.42 Oxide E / R [Å / min] 0.14 0.25 0.29 0.08 Oxide roughness (increase / decrease before / after evaluation) reduce Increase Increase reduce Cleaning power (Silicon dioxide) Cu △ O X X oxides △ X △ △ Cleaning power (Organic matter) Cu O O △ O oxides O X △ △ Scrubbering evaluation results Cu E / R [Å / min] 20.69 -15.50 0.00 10.40 Oxide E / R [Å / min] 0.00 0.05 0.08 0.13 Oxide roughness (increase / decrease before / after evaluation) reduce No change No change reduce Cleaning power (Silicon dioxide) Cu O O O △ oxides O O △ △ Cleaning power (Organic matter) Cu O X X O oxides O △ X O

[0291] As shown in Table 4, the effect of the silicon oxide film anti-etching agent was confirmed in the brushing evaluation.

[0292] Table 5 Composition (% by weight, balance is ultrapure water) compound Example 1 Example 9 Example 10 Etched material Citric acid 5.0 5.0 5.0 Ammonium citrate Glycine Arginine Metal corrosion inhibitors uric acid 1.5 1.5 1.5 Kojic acid ascorbic acid Silicon film etch resist MSA 1.0 1.0 1.0 Aminosulfonic acid Ammonium aminosulfonate Basic compounds containing hydroxyl groups Tetraethylammonium hydroxide (TEAH) 18.8 19.2 19.2 organic solvents Ethanolamine (MEA) 5.0 5.0 5.0 surfactants nonionic (TERGITOL™TMN-6) 0.01 anions (TRITON™DF-20) 0.01 Impregnation evaluation results Cu E / R [Å / min] 32.79 20.04 17.20 Oxide E / R [Å / min] 0.14 0.10 0.32 Oxide roughness (increase / decrease before / after evaluation) reduce No change reduce Cleaning power (Silicon dioxide) Cu △ O O oxides △ △ △ Cleaning power (Organic matter) Cu O O O oxides O O △ Scrubbering evaluation results Cu E / R [Å / min] 20.69 5.18 10.38 Oxide E / R [Å / min] 0.00 0.25 0.03 Oxide roughness (increase / decrease before / after evaluation) reduce reduce reduce Cleaning power (Silicon dioxide) Cu O O △ oxides O △ △ Cleaning power (Organic matter) Cu O X O oxides O O O

[0293] As shown in Table 5, a surfactant may also be included. In this case, it was confirmed that the roughness of the silicon oxide film can be reduced, but a decrease in cleaning power is achieved.

[0294] Table 6 Composition (% by weight, balance is ultrapure water) compound Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Comparative Example 5 Comparative Example 6 Comparative Example 7 Comparative Example 8 Comparative Example 9 Etched material Citric acid 5.0 5.0 5.0 5.0 Ammonium citrate Glycine Arginine Hydrogen perhydride 5.0 Metal corrosion inhibitors uric acid 1.5 1.5 1.5 1.5 1.5 Kojic acid ascorbic acid Silicon film etch resist MSA 1.0 1.0 1.0 1.0 1.0 Aminosulfonic acid Ammonium aminosulfonate Basic compounds containing hydroxyl groups Tetraethylammonium hydroxide (TEAH) 18.8 2.0 8.2 pH adjuster (buffer solution) ammonium acetate 18.8 organic solvents ethanolamine (MEA) 5.0 5.0 5.0 92.07 5.0 Impregnation results (batch type) Cu E / R [Å / min] 32.79 11.71 7.47 10.29 9.57 10.80 5.54 3.13 0.00 Oxide E / R [Å / min] 0.14 0.22 0.32 0.25 0.03 0.30 0.02 0.31 0.03 Oxide roughness (increase / decrease before / after evaluation) reduce No change Increase No change No change No change No change Increase Increase Cleaning power (Silicon dioxide) Cu △ X X X X X X △ △ oxides △ △ △ △ △ △ X △ X Cleaning power (Organic matter) Cu O X X X X O X △ △ oxides O X O O O △ X X X Washing results Cu E / R [Å / min] 20.69 -25.93 20.15 26.28 0.00 5.10 2.21 3.09 0.00 Oxide E / R [Å / min] 0.00 0.05 0.05 0.06 0.01 0.00 0.01 0.43 0.15 Oxide roughness (increase / decrease before / after evaluation) reduce No change No change No change No change No change No change No change No change Cleaning power (Silicon dioxide) Cu O X X X X X X △ △ oxides O △ O △ △ O X △ X Cleaning power (Organic matter) Cu O X X X X △ X △ △ oxides O △ O O △ △ X △ X

[0295] As shown in Table 6, in Example 1, excellent performance was confirmed in terms of cleaning power of silicon dioxide polishing material, cleaning power of organic matter, etching rate of silicon oxide film, and roughness of silicon oxide film. In Comparative Examples 1 to 5, the effectiveness of the organic solvent MEA in cleaning organic matter was confirmed. However, according to Comparative Examples 1 to 5, a reduction in cleaning power was confirmed when the composition was not mixed.

[0296] Furthermore, according to Comparative Example 6, which used MEA alone, it was confirmed that the cleaning effect on the copper film surface was poor. In Comparative Example 7, which used ammonium acetate instead of TEAH, it was confirmed that the cleaning results of the copper film and silicon oxide film were poor. According to Comparative Example 8, which did not use TEAH and adjusted the pH to 11.5 with alkanolamine, it was confirmed that the cleaning of the copper film and silicon oxide film was poor overall. In Comparative Example 9, which used hydrogen peroxide as an etching agent (citric acid, etc.), it was confirmed that the copper was not etched and the cleaning effect on the silicon oxide film was very poor.

[0297] Therefore, when the etching cleaning liquid composition of the present invention is used in the existing cleaning steps of the planarization method and apparatus for hybrid bonding structures, when a depression is formed between the joints required for hybrid bonding, the rounding phenomenon caused by excessive polishing of the oxide film can be suppressed, and polishing residues present on the surface of the oxide film and the metal layer can be removed at the same time. Furthermore, the process cost can be reduced while exhibiting the effect of improved bonding force in the hybrid bonding process.

[0298] Furthermore, with existing CMP slurries, it is difficult to adjust the selection ratio of the polishing speed of the oxide film to that of Cu, thus making it impossible to control the appropriate dish-shaped recess of the copper via. This is because, in the selection ratio of oxide film to copper, if the polishing speed of the oxide film is too fast compared to the polishing speed of the copper, the required dish-shaped recess of the copper via electrode cannot be formed, and therefore the bonding process cannot be performed. Conversely, if the polishing speed of the copper is too fast, the deep dish-shaped recess of the copper via electrode results in failure to form the bonding of the copper via electrode during the bonding process. This problem can be solved by using the etching cleaning solution composition of the present invention in the existing cleaning steps of the planarization method and apparatus for hybrid bonding structures. [Simplified Explanation of the Diagram]

[0069] FIG1 is a cross-sectional view schematically showing a hybrid bonding structure between planarization steps in an embodiment of the present invention.

[0070] Figure 2 is a cross-sectional view showing a planarized hybrid bonding structure according to an implementation example of the present invention.

[0071] Figure 3 is a cross-sectional view showing the rounding phenomenon of the planarization process of the prior art hybrid bonding structure and the voids generated during the hybrid bonding process thereunder (in Figure 3, the base process refers to "bulk process" and the polishing process refers to "Buffing process").

[0072] Figures 4a to 4d are flowcharts illustrating four embodiments of the planarization process of the hybrid bonding structure of the present invention.

[0073] Figures 5a to 5d are schematic diagrams and flowcharts illustrating the operation of the planarization apparatus for each of the four embodiments of the present invention in Figures 4a to 4d, while also briefly showing the changes in the planarization structure at each step.

Claims

1. A method for planarizing a hybrid bonding structure, characterized in that the hybrid bonding structure comprises: substrate; hole; Formed in the recessed region of the substrate; An oxide layer is formed in the recessed region and the non-recessed region of the substrate, respectively; A barrier layer is formed on the bottom and sidewalls of the hole and on the oxide layer; And a metal layer is formed in the hole and on the barrier layer. The planarization method of the hybrid bonding structure includes the following steps: First step, removing the metal layer formed on the non-recessed area; The second step is to remove the metal layer residue, oxide layer and barrier layer formed on the oxide layer in the non-recessed area. The third step is to flatten the step difference between the metal layer and the oxide film layer formed in the hole. The fourth step involves removing the barrier layer formed on the bottom and sidewalls of the hole, while simultaneously creating a metal thermal expansion space in a flat form.

2. The planarization method for the hybrid bonding structure as described in claim 1, wherein, The metal layer is made of copper, the barrier layer is made of one or more materials selected from Ti, TiN, Ta and TaN, and the oxide layer is made of one or more materials selected from Si, SiO2 and SiCN.

3. The planarization method for the hybrid bonding structure as described in claim 1, wherein, The metal layers removed in the first step are all the metal layers deposited on the non-recessed area and part of the metal layer formed inside the hole.

4. A method for planarizing hybrid bonding structures as described in claim 1, wherein, The first step, the second step, and the third step are performed through a chemical mechanical polishing process.

5. A method for planarizing hybrid bonding structures as described in claim 1, wherein, The second and third steps are performed separately or simultaneously using a slurry with a polishing speed selection ratio of 1:1 between the oxide layer and the metal layer.

6. A method for planarizing a hybrid bonding structure as described in claim 5, wherein, The slurry comprises: 0.05 wt% to 5 wt% silicon dioxide particles; 0.001 wt% to 1 wt% azole corrosion inhibitor containing one or more N groups; 0.001 wt% to 0.5 wt% amino acid complexing agent; 0.05 wt% to 1 wt% oxidant; and the balance being water.

7. A method for planarizing hybrid bonding structures as described in claim 1, wherein, The fourth step is performed by filling the recessed area of ​​the substrate with an etching cleaning solution composition.

8. A method for planarizing a hybrid bonding structure as described in claim 1, wherein, After filling with the etching cleaning solution composition in the fourth step, the method further includes step (e) of filling the recessed area of ​​the substrate with deionized water.

9. A method for planarizing a hybrid bonding structure as described in claim 8, wherein, The etching cleaning solution composition and the deionized water are filled using one or more pads and brushes selected independently from each other.

10. A method for planarizing a hybrid bonding structure as described in claim 7, wherein, The etching cleaning solution composition is an alkaline solution containing etching substances, metal corrosion inhibitors, silicon film anti-etching agents, hydroxyl-containing alkaline compounds, and alkaline amine-containing compounds.

11. A method for planarizing a hybrid bonding structure as described in claim 10, wherein, Based on the total weight of the etching cleaning solution composition, the etching substance comprises 0.1% to 10% by weight of one or more selected from aspartic acid, ammonium citrate, glycine, arginine, histidine, lysine, alanine, citric acid, aspartic acid, and glutamic acid.

12. A method for planarizing a hybrid bonding structure as described in claim 7, wherein, The etching cleaning solution composition planarizes the metal layer contained within the hole by etching at an etching rate of less than 50 angstroms per minute.

13. A planarization apparatus for a hybrid bonding structure, characterized in that the hybrid bonding structure comprises: substrate; hole; Formed in the recessed region of the substrate; An oxide layer is formed in the recessed region and the non-recessed region of the substrate, respectively; A barrier layer is formed on the bottom and sidewalls of the hole and on the oxide layer; and a metal layer is formed inside the hole and on the barrier layer. The planarization device for the hybrid bonding structure includes at least two CMP modules and an etching cleaning module. The etching cleaning module removes the barrier layer formed on the bottom and sidewalls of the hole while forming a metal thermal expansion space in a planar form by filling the recessed area of ​​the substrate with an etching cleaning liquid composition.

14. A planarization apparatus for a hybrid bonding structure as described in claim 13, wherein, All modules starting from the second of two or more CMP modules use a slurry with a polishing speed selection ratio of 1:1 for the oxide layer and the metal layer to flatten the step between the metal layer and the oxide film layer formed in the hole.

15. A planarization apparatus for a hybrid bonding structure as described in claim 13, wherein, The etching cleaning module is either a pad module or a brush module.

16. A planarization apparatus for a hybrid bonding structure as described in claim 13, wherein, The planarization device for the hybrid bonding structure also includes a deionized water cleaning module.

17. A planarization apparatus for a hybrid bonding structure as described in claim 13, wherein, The planarization device for the hybrid bonding structure consists of a first CMP module, a second CMP module, and an etching cleaning pad module.

18. A planarization apparatus for a hybrid bonding structure as described in claim 13, wherein, The planarization device for the hybrid bonding structure consists of a first CMP module, a second CMP module, a third CMP module, and an etching cleaning brush module.

19. A planarization apparatus for a hybrid bonding structure as described in claim 13, wherein, The planarization device for the hybrid bonding structure consists of a first CMP module, a second CMP module, an etching cleaning pad module, and an etching cleaning brush module.

20. A planarization apparatus for a hybrid bonding structure as described in claim 13, wherein, The planarization device for the hybrid bonding structure consists of a first CMP module, a second CMP module, an etching cleaning pad module, and a deionized water cleaning brush module.

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