Deposition method

Abstract

Several embodiments disclosed herein include methods and apparatus for depositing a plurality of layers on a large-area substrate. In one embodiment, a processing chamber is provided. The processing chamber includes a nozzle and a substrate support assembly. The nozzle is coupled to an RF power supply and ground, and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators are disposed within the nozzle, wherein one of the plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Further, a DC bias power supply is coupled to the substrate support assembly.

Description

Technical Field

[0001] The present disclosure generally relates to methods and apparatus for processing large area substrates. More specifically, the present disclosure relates to chemical vapor deposition systems and methods for device manufacturing. Prior Art

[0002] In the manufacture of displays, many processes are used to deposit thin films on substrates, such as liquid crystal display (LCD) and / or organic light emitting diode (OLED) substrates, to form electronic devices thereon. Generally, deposition is accomplished by introducing precursor gases into a vacuum chamber having a substrate disposed on a temperature controlled substrate support. The precursor gases are typically directed through a gas distribution plate, which is located near the top of the vacuum chamber. The precursor gases in the vacuum chamber can be excited into a plasma by applying radio frequency (RF) power from one or more RF sources coupled to the chamber to a conductive showerhead disposed in the chamber. The excited gases react to form a layer of material on the surface of the substrate, which is disposed on a temperature controlled substrate support.

[0003] Traditionally, plasmas are formed in conventional chambers for deposition of large area substrates using capacitively coupled electrode configurations. Recently, interest has been explored in multi-coil inductively coupled plasma (ICP) configurations, which have been traditionally used for deposition of round substrates or wafers, for deposition processing of these large area substrates. In such inductively coupled plasma configurations used for large area high density plasma chemical vapor deposition (HDP-CVD), RF power may be applied beneath the substrate in order to modulate the intrinsic film stress of individual film layers of the fabricated semiconductor device. Lower intrinsic film stress is desirable for the finished device to reduce film damage (e.g., film cracking and delamination). However, conventional inductively coupled configurations utilize dielectric materials that allow RF power applied beneath the substrate to penetrate the plasma processing region and couple to an electrically conductive showerhead frame disposed above. The penetration of the RF power into the processing region causes a difference in stress characteristics between the region of the film deposited directly beneath the showerhead coil and the region of the film deposited directly beneath the showerhead frame.

[0004] Therefore, there is a need in the art for improved methods and apparatus for regulating film stress during large area high density plasma vapor deposition. Summary of the invention

[0005] The present disclosure relates to methods and apparatus for processing large area substrates. More specifically, the present disclosure relates to chemical vapor deposition systems and methods for device manufacturing.

[0006] In one embodiment, a plasma deposition chamber is provided. The plasma deposition chamber includes a showerhead, a plurality of dielectric plates, a plurality of induction coils, and a substrate support assembly. The showerhead includes a plurality of perforated members, each of the plurality of perforated members is coupled to one or more of the plurality of support members. The support member provides a precursor gas to a space between the induction coil and the perforated member. The substrate support assembly includes an electrostatic chuck assembly, an insulating layer, and a substrate bias plate. The substrate bias plate is coupled to a DC power supply and a low pass filter.

[0007] In one embodiment, a plasma deposition chamber is provided. The plasma deposition chamber includes a showerhead having a plurality of perforated components, an inductive coupler corresponding to one or more of the plurality of perforated components, a plurality of support components for supporting each of the plurality of perforated components, and a substrate support assembly. One or more of the plurality of support components provide a plurality of precursor gases to a space between the inductive coupler and the perforated components. The substrate support assembly includes an electrostatic chuck assembly, an insulating layer, and a substrate bias plate. The substrate bias plate is coupled to a DC power supply and a low-pass filter.

[0008] In one embodiment, a method for depositing a film on a substrate is provided. The method includes flowing a precursor gas to a plurality of gas spaces of a showerhead, varying the flow of the precursor gas into each of the plurality of gas spaces, applying radio frequency power to a plurality of induction coils of the showerhead to energize the precursor gas, flowing the energized precursor gas into a processing zone of a processing chamber, and applying a DC bias power to a bias plate within a substrate support to regulate film deposition on the substrate. Simple diagram description

[0009] In order to make the above features of the present disclosure understood in detail, the present disclosure briefly described above can be described in more detail with reference to a plurality of embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings are only typical embodiments of the present disclosure and should not be construed as limiting the scope of protection of the present disclosure, and the present disclosure may allow other equivalent embodiments. FIG1 is a cross-sectional view of a processing chamber according to one embodiment of the present disclosure; Figure 2A shows a partial enlarged view of the cover assembly of Figure 1; Figure 2B is a top view of an embodiment of a coil; FIG. 3 is a bottom view of a panel of a showerhead according to an embodiment of the present disclosure, with an overlay profile of the substrate relative to the showerhead; FIG. 4 is a cross-sectional view of a processing chamber according to another embodiment of the present disclosure; and FIG. 5 is a flow chart showing the operation of forming the film deposited in FIG. 4.

[0010] To facilitate understanding, identical reference numerals have been used, where possible, to represent identical elements that are common to the figures. It is contemplated that elements disclosed in one embodiment may be beneficially utilized on other embodiments without further description. Implementation

[0011] Various embodiments of the present disclosure include methods and apparatus for depositing a plurality of layers on a large area substrate. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to a radio frequency power source and ground and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators are disposed in the showerhead, wherein one of the plurality of plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Further, a DC bias power source is coupled to the substrate support assembly.

[0012] As used herein, a large area substrate is a substrate having a surface area of ​​typically about 1 square meter or more. However, the substrate is not limited to any particular size or shape. In one aspect, the term "substrate" represents any polygonal, square, rectangular, curved or other non-circular workpiece, such as a glass or polymer substrate, such as used in the manufacture of flat panel displays.

[0013] Here, in order to improve the processing uniformity of the surface of a large area substrate exposed to gas in a processing zone, a showerhead is configured to allow gas to flow through the showerhead and into the processing space of a chamber in a plurality of independently controlled blocks. In addition, each block is configured with a gas chamber, one or more perforated members between the gas chamber and the processing space of the chamber, and a coil or a portion of a coil dedicated to a block or individual perforated plate. The gas chamber is formed between the dielectric window, the perforated member and the surrounding frame structure. Each gas chamber is configured to allow the processing gas to flow through and distribute, thereby causing the gas to flow through the perforated member and into the processing space at a relatively uniform flow rate, or in some cases, at a regulated flow rate. The gas chamber has a thickness that is less than twice the thickness of the dark space (the dark space of plasma formed by the processing gas under pressure in the gas chamber). An inductive coupler, preferably in the form of a coil, is located behind the dielectric window and inductively couples energy through the dielectric window, the gas chamber and the perforated member to strike and maintain the plasma in the processing chamber. The flow of processing gas in each block is controlled to obtain a uniform or adjusted gas flow to achieve the desired processing results on a large area substrate.

[0014] Embodiments disclosed herein include high density plasma chemical vapor deposition processing chambers that can be operated to form one or more layers or films on substrates, including large area substrates. Processing chambers as disclosed herein can be adapted to deliver energized species of precursor gases generated in a plasma. The plasma can be generated by inductively coupling energy into a gas under vacuum. Embodiments disclosed herein can be adapted for use in chambers obtained from AKT America, Inc., a subsidiary of Applied Materials, Inc., Santa Clara, California. It should be understood that the embodiments described herein can also be implemented in chambers obtained from other manufacturers.

[0015] FIG. 1 is a cross-sectional view of an exemplary processing chamber 100 according to one embodiment of the present disclosure. A substrate 102 is disposed within a chamber body 104 on a substrate receiving surface 120 of a pedestal or substrate support assembly 108. The substrate support assembly 108 is coupled to a shaft 110 that extends through the chamber body 104. The shaft 110 is coupled to an actuator 112 that moves the substrate support assembly 108 in a vertical direction (in the Z direction) within the chamber body 104. For example, the substrate support assembly 108 of the processing chamber 100 shown in FIG. 1 is shown in a processing position. However, the substrate support assembly 108 can be lowered in the Z direction to a position adjacent to a transfer port 114. In this position, an end effector or robot blade (not shown) is inserted through the transfer port 114 and between the substrate 102 and the substrate receiving surface 120 to transfer the substrate 102 out of the chamber body 104.

[0016] The processing chamber 100 also includes a lid assembly 106 disposed above the substrate support assembly 108. The lid assembly 106 can include a backing plate 122 that rests on the chamber body 104. The lid assembly 106 includes a gas distribution assembly or showerhead assembly 124 configured to deliver a processing gas from a gas source to a processing region 126 between the showerhead assembly 124 and the substrate 102. The showerhead assembly 124 can also be coupled to a cleaning gas source that provides a cleaning gas to the processing region 126, such as a fluorine-containing gas.

[0017] The showerhead assembly 124 also serves as a plasma source 128. The showerhead assembly 124 includes one or more inductively coupled plasma generating components or coils 130. Each of the one or more coils 130 may be a single coil 130, two coils 130, or more than two coils 130 operating together and are briefly described below as coils 130. Each of the one or more coils 130 is coupled to a power source 148 and a ground 133. In one embodiment, the power source 148 is an inductively coupled radio frequency (RF) power source. The power source 148 is configured to provide a power signal at any suitable frequency and power level to generate plasma through the showerhead assembly 124. The first power source may include a matching circuit or tuning capability to adjust the electrical characteristics of the coil 130.

[0018] The showerhead assembly 124 further includes a faceplate 132 having a plurality of gas flow diffusers 134. Each of the plurality of gas flow diffusers 134 is supported by a plurality of support members 136 configured in a grid-like arrangement and includes a plurality of openings 220 (FIG. 2A) through which gas can flow. Each of the plurality of coils 130, or a portion of one or more coils 130, is disposed on or above a respective dielectric plate 138. An example of a coil 130 is more clearly shown in FIG. 2A, in which the coil 130 is disposed on the dielectric plate 138 within the lid assembly 106. A plurality of gas spaces 140 are defined by the surfaces of the dielectric plate 138, the gas flow diffusers 134, and the support members 136. Each of the one or more coils 130 is configured to receive a radio frequency signal from a power source 148 and create an electromagnetic field to energize the precursor gas in the gas space 140 into a plasma. The excited process gas in the gas space 140 flows into the process region 126 through the gas flow diffuser 134 and toward the substrate 102.

[0019] Processing gas from a gas source is provided to each of the plurality of gas spaces 140 through a plurality of conduits 200, 205 in the support member 136. The volume or flow rate of gas entering and leaving the showerhead assembly 124 is controlled in different sections of the showerhead assembly 124. The flow of gas to each of the plurality of gas spaces 140 may be controlled by a plurality of flow controllers, such as a plurality of flow controllers 142, 143, and 144, as shown in FIG. 1. For example, the flow rate of gas to an outer section or edge section of the showerhead assembly 124 may be controlled by a plurality of flow controllers 142, 143, while the flow rate of gas to an inner section or center section of the showerhead assembly may be controlled by a flow controller 144. When performing chamber cleaning, a cleaning gas from a cleaning gas source may flow to each of the plurality of gas spaces 140, and the cleaning gas is excited to become ions, radicals, or both in the gas spaces 140. The energized cleaning gas may flow through the gas flow diffuser 134 and into the processing region 126 to clean chamber components.

[0020] FIG. 2A is a partially enlarged view of the lid assembly 106 of FIG. 1. As previously described, a precursor gas from a gas source flows to the gas space 140 through a first conduit 200 formed in the backing plate 122. Each of the plurality of first conduits 200 is coupled to a plurality of second conduits 205, which are formed to pass through a plurality of support members 136 of the showerhead frame 124. The second conduits 205 provide the precursor gas to the gas space 140 at the opening 210. In some embodiments, some of the second conduits 205 may provide gas to two adjacent gas spaces 140 (one of the plurality of second conduits 205 is shown in phantom in FIG. 2A). In some embodiments, the second conduits 205 may include a flow restrictor 215 to control the flow of gas to the gas space 140. In order to control the flow of gas flowing therethrough, the size of the flow restrictor 215 may be varied. For example, each of the plurality of flow restrictors 215 includes a hole of a specific size (e.g., diameter) for controlling the flow of gas. Further, each of the plurality of flow restrictors 215 may be changed as needed to provide a larger hole size or a smaller hole size as needed to control the flow of gas therethrough.

[0021] As shown in FIG. 2A , the gas flow diffuser 134 is disposed at the lower end of the gas space 140 and includes a plurality of openings 220 extending through the gas flow diffuser 134. Due to the diameter of the openings 220 extending between the gas space 140 and the processing region 126, each of the plurality of openings 220 allows the gas energized by the coil 130 to flow from the gas space 140 into the processing region 126 in the form of plasma at a desired flow rate. In order to balance the gas through each of the plurality of openings 220 in one or more gas flow diffusers 134, the openings 220 and / or rows and columns of the openings 220 may have different sizes and / or different spacings. Alternatively, depending on the desired gas flow characteristics, the gas flow from each of the plurality of openings 220 may be non-uniform.

[0022] The support member 136 is coupled to the back plate 122 by fasteners 240, such as bolts or screws. Each of the plurality of support members 136 physically supports and separates individual gas flow diffusers 134 at the interface portion 245. Each of the plurality of interface portions 245 can be a ledge or shelf to support the perimeter or edge of the gas flow diffuser 134. In some embodiments, the interface portion 245 includes a removable sheet 250. The removable sheet 250 is fastened to the support member 136 by fasteners (not shown), such as bolts or screws. A portion of the interface portion 245 is L-shaped, while another portion of the interface portion 245 is T-shaped. One or more seals 265 are used to seal the gas space 140. For example, the seal 265 is an elastic material, such as an O-ring seal or a polytetrafluoroethylene (PTFE) caulking material. One or more seals 265 may be provided between the support member 136 and the gas flow diffusers 134. The removable plate 250 supports the gas flow diffusers 134 to be supported on the support member 136. The removable plate 250 may be removed to replace each gas flow diffuser 134 individually when necessary.

[0023] In addition, each of the plurality of support members 136 supports the dielectric plate 138 (shown in FIG. 2A ) using a shelf 270 extending therefrom. In various embodiments of the showerhead assembly 124 / plasma source 128, the lateral surface area (XY plane) of the dielectric plate 138 is relatively small compared to the surface area of ​​the entire showerhead assembly 124 / plasma source 128. In order to support the dielectric plate 138, the shelf 270 is utilized. The reduced lateral surface area of ​​the plurality of dielectric plates 138 allows the dielectric material to be used as a physical barrier between the vacuum environment and plasma in the gas space 140 and the processing region 126 and the atmospheric environment, where the adjacent coil 130 is typically located, without applying large stress therein based on the large area supporting the atmospheric pressure load.

[0024] During processing, seal 265 is used to seal space 275 (at atmospheric pressure or near atmospheric pressure) from gas space 140 (at low atmospheric pressure in the millitorr range or lower). Interface member 280 is shown extending from support member 136, and fasteners 285 are used to secure dielectric plate 138 against seal 265 and frame 270, i.e., to push dielectric plate 138 toward seal 265 and frame 270. Seal 265 can also be used to seal a space between the outer periphery of gas flow diffuser 134 and support member 136.

[0025] The material used for the showerhead assembly 124 / plasma source 128 can be selected based on one or more of electrical properties, strength and chemical stability. The coil 130 is made of a conductive material. The back plate 122 and the support member 136 are made of a material capable of supporting the weight of the supported element and the atmospheric pressure load, which may include a metal or other similar material. The back plate 122 and the support member 136 can be made of a non-magnetic material (e.g., a non-paramagnetic or non-ferromagnetic material), such as an aluminum material. The removable plate 250 is also formed of a non-magnetic material, such as a metallic material, such as aluminum or a ceramic material (e.g., alumina (Al 2O 3) or sapphire (Al 2O 3)). The gas flow diffuser 134 is made of a ceramic material, such as quartz, alumina or other similar materials. The dielectric plate 138 is made of quartz, alumina or sapphire material.

[0026] In some embodiments, the plurality of support members 136 of the showerhead assembly include one or more coolant channels 255 therein. The one or more coolant channels 255 are fluidly coupled to a fluid source 260 configured to provide a coolant medium to the coolant channels 255.

[0027] FIG. 2B is a top view of one embodiment of a coil 130 on a dielectric plate 138 in a cover assembly 106. In one embodiment, the coil 130 assembly shown in FIG. 2B can be used so that the coil assembly shown is formed on each of a plurality of dielectric plates 138 so that each planar coil is connected in series with adjacently arranged coils 130 in a desired pattern throughout the showerhead assembly 124. The coil 130 includes a conductor pattern 290, which is in the shape of a rectangular spiral. However, other types of conductor patterns are also contemplated. The electrical connection includes an electrical input terminal 295A and an electrical output terminal 295B. Each of one or more coils 130 of the showerhead assembly 124 is connected in series and / or in parallel.

[0028] FIG. 3 is a bottom view of one embodiment of a faceplate 132 of a showerhead assembly 124. FIG. 3 includes an overlay of the position of a substrate 102 on a substrate receiving surface 120 relative to a showerhead assembly 124 during processing in a processing chamber 100, according to one embodiment of the present disclosure. As described above, the showerhead assembly 124 is configured to include one or more gas flow diffusers 134 supported and separated by a plurality of support members 136 configured as a grid-like frame. Gas flows from a gas space 140 into a processing zone 126 on a substrate 102 through a plurality of openings 220 passing through each gas flow diffuser 134. The number of coils 130, gas spaces 140, and gas flow diffusers 134 in the showerhead assembly 124 depends on the total area on the substrate 102 for film deposition.

[0029] FIG. 4 is a cross-sectional view of a processing chamber 400 according to an embodiment of the present disclosure. In addition to the features of the processing chamber 100 described above, the processing chamber 400 further includes a substrate support assembly 108 having an electrostatic chuck assembly 158, a substrate biasing plate 160 and an insulating layer 162.

[0030] In one embodiment, the electrostatic chuck assembly 158 is disposed at the highest position of the substrate support assembly 108 such that the substrate receiving surface 120 corresponds to the upper surface of the electrostatic chuck assembly 158. The electrostatic chuck assembly 158 is coupled to an electrostatic chuck power supply 152, which is disposed outside the chamber body 104. The electrostatic chuck power supply can be any suitable power supply configured to provide a desired voltage for electrostatic adsorption of the substrate 102 during processing. In addition, the electrostatic chuck assembly 158 can include two or more electrodes, and the two or more electrodes can be selectively arranged in any suitable configuration to adsorb a particular substrate device. For example, the electrostatic chuck assembly 158 can include two electrodes configured as a rectangular spiral, one electrode surrounding the other. In another example, the electrostatic chuck assembly 158 can include two staggered electrodes to form a circle. Each electrode in the electrostatic chuck assembly 158 can be powered separately by the electrostatic chuck power supply 152, so that the electrodes can be powered with different polarities.

[0031] The insulating layer 162 is disposed at the bottom of the substrate support assembly 108. The insulating layer 162 may be formed of a dielectric material, such as silicon dioxide (SiO 2). The insulating layer 162 shields the line-of-sight path of the electric field formed by the substrate bias plate 160 toward the chamber body 104, thereby minimizing the possibility of arcing between the substrate bias plate 160 and the chamber body 104.

[0032] The substrate bias plate 160 is disposed between the electrostatic chuck assembly 158 and the insulating layer 162. The substrate bias plate is further coupled to the substrate bias power supply 156 and the low pass filter 154, which are configured as a linear connection. As shown in FIG. 4, the substrate bias power supply 156 and the low pass filter 154 can be disposed outside the chamber body 104. In order to extract ions from the plasma in the processing region 126 and toward a desired area of ​​the substrate 102 on the substrate support assembly 108, the substrate bias plate 160 and the substrate bias power supply 156 are configured to provide an electrical bias from below the substrate 102. When used during processing, the extraction of plasma ions toward the desired area of ​​the substrate 102 regulates film deposition, and thus film properties (such as film thickness and film stress) can be controlled. For example, by adjusting the substrate bias power supplied to certain areas of the substrate surface, the amount (eg, density) of ions extracted from the plasma may be adjusted, thereby controlling the tensile stress and compressive stress properties of the film deposited on the substrate 102 .

[0033] The substrate bias power supply 156 is a direct current (DC) type power source that supplies a DC voltage with a positive polarity or a negative polarity. In one embodiment, the substrate bias power supply 156 is configured to supply a constant DC bias. In another embodiment, the substrate bias power supply 156 is configured to supply a pulsed DC bias. A low pass filter 154 may be configured to prevent RF signals from the power supply 148 from coupling with the substrate support assembly 108 and passing to the substrate bias power supply 156.

[0034] FIG. 5 is a flow chart of a method 500 for controlling intrinsic film stress during large area film deposition using the processing chamber 400 of FIG. 4. At operation 510, the substrate 102 is transferred to the substrate receiving surface 120 of the substrate support assembly 108. The substrate 102 can be transferred into the processing chamber 100 and transferred to the substrate support assembly 108 by a suitable method, such as by a mechanical blade through the transfer port 114 (the transfer port 114 is located in the side wall of the chamber body 104). The actuator 112 can then adjust the substrate support assembly 108 to the processing position, as shown in FIG. 1.

[0035] In operation 520, precursor gas from a gas source is provided to the gas space 140 through a plurality of pipes 200, 205 disposed on the support member 136. The flow of the precursor gas may be controlled by a plurality of flow controllers 142, 143, which control the amount and flow rate of the gas provided to each gas space 140.

[0036] At operation 530, the power source 148 supplies RF power to the inductively coupled coil 130 within the lid assembly 106. The RF power may be supplied at a suitable frequency or power level to generate plasma. For example, 56 kilowatts (kW) of RF power and a signal frequency of 13.56 megahertz (MHz) may be applied. In another example, 56 kilowatts of power and a 2 megahertz (MHz) frequency RF signal may be applied. Each of the plurality of coils 130 receives the RF power supplied by the power source 148 and creates an electromagnetic field that energizes the precursor gas within the gas space 140. The energized precursor gas then flows through the plurality of openings 220 disposed through the gas flow diffuser 134 and into the processing region 126 toward the substrate 102.

[0037] At operation 540, a DC bias is applied to the substrate bias plate 160 as the excited process gas flows into the process region 126. The DC bias is supplied by the substrate bias power supply 156 and filtered by the low pass filter 154. The DC bias output may be pulsed or constant, with a positive potential or a negative potential. The DC bias may be supplied to the substrate bias plate 160 at any suitable pulse rate or power level. For example, a pulsed DC bias may be supplied with a pulse rate of about 50 kHz to about 500 kHz, such as about 100 kHz to about 400 kHz. For example, a pulsed DC bias may be supplied with a pulse rate of about 250 kHz to about 300 kHz. The pulsed or constant DC bias may be supplied at a power level in the range of about 50 watts (W) to about 1000 watts, such as about 250 watts to about 750 watts. For example, the DC bias power supply is at a power level of about 400 Watts to about 600 Watts.

[0038] By creating a local capacitively-coupled electric field, the DC power applied across the substrate bias plate 160 biases the plasma toward the substrate 102, thereby increasing ion bombardment on the substrate surface and enabling the formation of a film with a regulated intrinsic film stress. The use of a DC substrate bias in operation 540 enables the modification of the intrinsic film stress properties during large area high density plasma chemical vapor deposition using a multi-coil inductively coupled plasma system. In particular, the DC bias enables the formation of large area substrate films with reduced and uniform film stress levels across the deposited film.

[0039] Other methods of film stress control do not involve substrate bias, or involve applying a radio frequency substrate bias power to modulate ion impact on the substrate surface. However, when implemented in a high density plasma chamber having a multi-coil inductively coupled plasma system, these methods result in deposited films having undesirable film stress characteristics. For example, when no substrate bias is applied, deposited films tend to exhibit undesirably high tensile film stress levels.

[0040] Alternatively, when an RF substrate bias is applied, the deposited film tends to exhibit non-uniform film stress levels. In particular, the film stress of the region of the substrate directly below the coils of the multi-coil inductively coupled plasma system tends to be modulated by the RF bias power, while the region of the substrate below the showerhead structure frame is largely unaffected. This non-uniformity is because the RF bias power penetrates the plasma and couples to the grounded showerhead structure frame disposed above. Thus, when an RF substrate bias is applied, the film stress is position dependent.

[0041] In contrast, when a DC substrate bias is applied, the film stress modulation is not position dependent. Rather, the resulting film exhibits uniform film stress properties because the DC bias power is not coupled to the upper grounded showerhead structure frame. Thus, the plasma sheath is affected by the DC bias power, and the area below the showerhead structure frame and the area below the coil of the multi-coil inductively coupled plasma system are substantially equally modulated.

[0042] Various embodiments of the present disclosure include methods and apparatus capable of forming one or more film layers on large area substrates. Plasma uniformity and gas (or precursor) flow are controlled by a combination of individual gas flow diffusers 134, coils 130, and / or multiple flow controllers 142, 143, and 144. Film stress uniformity is controlled by applying a DC substrate bias to a biased substrate platform (i.e., substrate bias plate 160) within the substrate support assembly 108.

[0043] In summary, although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention belongs can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the scope of the attached patent application.

[0044] 100: Processing chamber 102:Substrate 104: Chamber body 106: Cover assembly 108: substrate support assembly 110: Axis 112: Actuator 114: Portal 120: substrate receiving surface 122: Back panel 124: Nozzle assembly 126: Processing Area 128: Plasma Source 130: Coil 132: Panel 133: Grounding 134: Gas flow diffuser 136: Support member 138: Dielectric board 140: Gas space 142,143,144:Flow controller 148: Power Supply 152: Electrostatic chuck power supply 154: Low pass filter 156: Substrate bias power supply 158: Electrostatic chuck assembly 160: substrate bias plate 162: Insulation layer 200,205: Pipeline 210: Opening 215: Flow limiter 220: Opening 240: Fasteners 245: Interface 250: Removable piece 255: Coolant channel 260: Fluid Source 265: Seal 270: Rack 275: Space 280: Interface Components 285: Fasteners 290: Conductor pattern 295A: Electrical input 295B: Electrical output 400: Processing chamber 500:Method 510,520,530,540: Operation X,Y,Z: Direction

Claims

1. A deposition method comprising: disposing a substrate on a substrate support disposed in a processing area of ​​a chamber body; supplying a precursor gas from a gas source to a plurality of gas spaces of a nozzle, each of the plurality of gas spaces being defined by a separate perforated member, a separate dielectric plate disposed on the separate perforated member, and a plurality of adjacent support members, wherein supplying the precursor gas to the plurality of gas spaces comprises causing the precursor gas to flow through a plurality of channels disposed in each of the adjacent support members; applying a radio frequency power to each of the separate dielectric plates to form an energized precursor gas in the plurality of gas spaces; causing the energized precursor gas to flow through each of the separate perforated members into the processing area of ​​the chamber body; and applying a direct current bias to a substrate bias plate disposed in the substrate support to bias the energized precursor gas toward the substrate.

2. The deposition method as described in claim 1, wherein the DC bias is a constant DC bias provided to the substrate bias plate.

3. The deposition method as described in claim 2, wherein the DC bias system provides a power level of about 50 watts (W) to about 1000 watts.

4. The deposition method as claimed in claim 1, wherein the DC bias is a pulsed DC bias provided to the substrate bias plate, the pulsed DC bias being pulsed at a frequency of about 50 kHz to about 500 kHz.

5. The deposition method as claimed in claim 1, wherein the individual dielectric plate, the nozzle, and the adjacent support members define a coil space, wherein each of the plurality of inductive couplers is supported in the coil space by each of the individual dielectric plates.

6. The deposition method as claimed in claim 1 further includes flowing a coolant through a plurality of coolant channels disposed in the adjacent support members.

7. The deposition method as claimed in claim 1, wherein the flow of the precursor gas is controlled by one or more flow controllers.

8. The deposition method as claimed in claim 7, wherein the one or more flow controllers are configured to control the amount and rate of the precursor gas supplied to each of the plurality of gas spaces.

9. The deposition method as described in claim 1, wherein the radio frequency power system is 56 kilowatts (kW) and has a signal frequency of 13.56 megahertz (MHz).

10. The deposition method as described in claim 1, wherein the radio frequency power system is 56 kilowatts and has a signal frequency of 2 megahertz (MHz).

11. A deposition method comprising: disposing a substrate on a substrate support disposed in a processing region of a chamber body; supplying a precursor gas from a gas source to a plurality of gas spaces of a nozzle, each of the plurality of gas spaces being defined by a separate perforation member, a separate dielectric plate disposed on the separate perforation member, and a plurality of adjacent support members; applying a radio frequency power to each of the separate dielectric plates to form an energized precursor gas in the plurality of gas spaces; causing the energized precursor gas to flow through each of the separate perforation members into the processing region of the chamber body; and applying a direct current bias to a substrate bias plate disposed in the substrate support to bias the energized precursor gas toward the substrate.

12. The deposition method as claimed in claim 11, wherein providing the precursor gas to the plurality of gas spaces comprises allowing the precursor gas to flow through a plurality of conduits disposed in each of the adjacent support members.

13. The deposition method as described in claim 11, wherein the DC bias is a constant DC bias provided to the substrate bias plate.

14. The deposition method as described in claim 13, wherein the DC bias system provides a power level of about 50 watts (W) to about 1000 watts.

15. The deposition method as claimed in claim 11, wherein the DC bias is a pulsed DC bias provided to the substrate bias plate, the pulsed DC bias being pulsed at a frequency of about 50 kHz to about 500 kHz.

16. The deposition method as claimed in claim 11, wherein the individual dielectric plate, the nozzle, and the adjacent support members define a coil space, wherein each of the plurality of inductive couplers is supported in the coil space by each of the individual dielectric plates.

17. The deposition method as claimed in claim 11 further includes flowing a coolant through a plurality of coolant channels disposed in the adjacent support members.

18. The deposition method as claimed in claim 11, wherein the flow of the precursor gas is controlled by one or more flow controllers.

19. The deposition method as claimed in claim 18, wherein the one or more flow controllers are configured to control the amount and rate of the precursor gas supplied to each of the plurality of gas spaces.

20. The deposition method as described in claim 11, wherein the radio frequency power system is 56 kilowatts (kW) and has a signal frequency of 13.56 megahertz (MHz).

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