Flip-chip bonding-based packaging structure and its manufacturing method

Abstract

A flip-chip bonding-based packaging structure and its manufacturing method are provided. The flip-chip bonding-based packaging structure includes a redistribution structure and a leadframe structure disposed on the redistribution structure. The redistribution structure includes a first surface and a second surface opposite to each other. The leadframe structure includes a base, a first carrier portion extending vertically on the base, and an extension portion adjacent to the first carrier portion, the extension portion extending from the base to the first surface and parallel to the first carrier portion. A first active element is disposed on the first carrier portion. A passive element is disposed on the second surface for electrical connection to the first active element.

Description

[Technical Field]

[0001] This disclosure relates to antenna packaging structures, and in particular to antenna packaging structures based on flip-chip bonding and methods for manufacturing the same. [Previous Technology]

[0002] Traditional radio frequency (RF) chips are typically bonded to a ceramic substrate face-up and then transmitted via wire bonding. While wire bonding improves the heat dissipation of traditional RF chips to some extent, the longer signal transmission path can easily cause significant parasitic effects, thus affecting transmission efficiency and signal stability. Specifically, parasitic inductance suppresses high-frequency components of the signal, leading to reduced frequency response and high-frequency signal distortion; parasitic capacitance can cause leakage current under high-frequency operation; furthermore, impedance mismatch can cause signal reflection, resulting in standing waves and negatively impacting overall transmission performance.

[0003] With the rise of low-Earth orbit satellites and millimeter-wave applications, applying chiplet heterogeneous integration (Chiplet Heterogeneous Integration) technology to antenna-in-package (AiP) has gradually become an important direction for solving high-frequency (such as millimeter-wave and terahertz wave) radio frequency systems. However, there are still technical problems to be solved in millimeter-wave bands and high-power radio frequency systems. First, traditional wire bonding cannot provide sufficiently low transmission delay and path loss. When the transmission path of radio frequency signals in the millimeter-wave band is long, there will be significant signal loss and reflection. Second, although integrating multiple chips with different functions (such as processors, radio frequency modules, memory, etc.) into a package structure with a size of a few millimeters to tens of millimeters can reduce the overall system size and reduce signal transmission delay, it also exacerbates electromagnetic interference (EMI). Due to the extremely small spacing between multiple chips, electromagnetic coupling between different chips and crosstalk between chips occur. Furthermore, when high-power components (such as power amplifiers) coexist with radio frequency components, the strong current and high-frequency noise generated by the power amplifier during operation can interfere with the nearby radio frequency modules, leading to radio frequency signal distortion, insufficient high-frequency noise suppression, or unstable system frequency response. [Summary of the Invention]

[0004] In some embodiments, an antenna packaging structure based on flip-chip bonding is provided. The antenna packaging structure based on flip-chip bonding includes a lead frame structure and a redistribution structure disposed on the lead frame structure. The redistribution structure includes a first surface and a second surface opposite to each other. The lead frame structure includes a metal component, a first active element, and a passive element. The metal component includes a base, a first carrier portion extending vertically on the base, and an extension portion adjacent to the first carrier portion, the extension portion extending from the base to be attached to the first surface and parallel to the first carrier portion. The first active element is disposed between the first carrier portion and the first surface for attachment to the first surface. The passive element is disposed on the second surface for electrical connection to the first active element.

[0005] In some embodiments, a method for manufacturing an antenna package structure based on flip-chip bonding is provided. The method for manufacturing an antenna package structure based on flip-chip bonding includes: providing a redistribution structure on a carrier board, wherein the redistribution structure has a first surface and a second surface opposite to each other; disposing a first active element on the first surface; disposing a metal member on the first active element, wherein the metal member includes a base, a first carrier portion extending vertically on the base and an extension portion adjacent to the first carrier portion, the extension portion extending from the base to the first surface and parallel to the first carrier portion, and the first active element being disposed between the first surface and the first carrier portion; removing the carrier board to expose a second surface; and disposing a passive element on the second surface for electrically connecting the first active element.

[0006] The flip-chip bonding-based antenna packaging structure disclosed herein can be applied to various types of electronic devices. To make the features and advantages of this disclosure more apparent and understandable, various embodiments are described below in detail with reference to the accompanying drawings.

Implementation Method

[0008] The following disclosure provides many different embodiments or examples for implementing the provided apparatus. Specific examples of the components and their configurations are described below to simplify the embodiments of this disclosure, and are not intended to limit this disclosure. For example, if the description mentions that a first component is formed on a second component, it may include embodiments where the first and second components are in direct contact, or embodiments where an additional component is formed between the first and second components, so that the first and second components are not in direct contact. Furthermore, this disclosure may repeat element symbols and / or characters in different embodiments or examples. Such repetition is for brevity and clarity, and is not intended to indicate a relationship between the different embodiments and / or examples discussed.

[0009] In some embodiments disclosed herein, terms such as "setup," "connection," and similar terms, unless specifically defined, may refer to two components in direct contact, or they may refer to two components not in direct contact, wherein an additional connecting component is located between the two structures. Terms such as "setup" and "connection" may also include situations where both structures are movable or both structures are fixed.

[0010] In addition, the terms "first", "second" and similar terms mentioned in this specification or the claims are used to name different components or to distinguish different embodiments or scopes, and are not used to limit the upper or lower limit of the number of components, nor to limit the manufacturing order or the order of installation of components.

[0011] In this document, the terms "approximate," "about," and "substantially" generally mean within 10%, 5%, 3%, 2%, 1%, or 0.5% of a given value or range. The given quantities are approximate, meaning that the terms "approximate," "about," and "substantially" are implied even without specific mention. The phrase "the range is between the first value and the second value" means that the range includes the first value, the second value, and other values ​​in between. Furthermore, any two values ​​or directions used for comparison may have a certain degree of error. If the first value equals the second value, it implies that there may be an error between the first value and the second value within approximately 10%, 5%, 3%, 2%, 1%, or 0.5%. If the first direction is perpendicular to the second direction, the angle between the first and second directions can be between 80 and 100 degrees. If the first direction is parallel to the second direction, the angle between the first and second directions can be between 0 and 10 degrees.

[0012] It should be understood that, for clarity, some components of the device are omitted in the drawings, and only some components are schematically shown. In some embodiments, additional components may be added to the device described below. In other embodiments, some components of the device described below may be replaced or omitted. It should be understood that, in some embodiments, additional operating steps may be provided before, during, and / or after the method of manufacturing the device. In some embodiments, some of the operating steps may be replaced or omitted, and the order of some of the operating steps is interchangeable.

[0013] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art. It is understood that such terms, for example, as defined in commonly used dictionaries, shall be interpreted as having a meaning consistent with the relevant art and the background or context of this disclosure, and shall not be interpreted in an idealized or overly formal manner, unless specifically defined in the embodiments of this disclosure.

[0014] In some existing antenna packaging structures, ceramic packaging may be used to combine the RF chip and the antenna. Specifically, the RF chip can be placed on a ceramic substrate and electrically connected to the antenna by wire bonding. However, this approach is not conducive to multi-chip heterogeneous integration and will result in serious signal loss problems. On the other hand, the use of flip-chip packaging will lead to poor heat dissipation efficiency and insufficient linewidth and spacing, which is not conducive to high-frequency applications. Similarly, fan-out packages also have the problem of poor heat dissipation efficiency, and the complex manufacturing process will result in high costs. To this end, this disclosure provides an antenna packaging structure based on flip-chip bonding and its manufacturing method, which combines a lead frame structure including an RF chip with a redistribution structure including an antenna to realize the application of multi-chip heterogeneous integration technology to the flip-chip bonding-based antenna packaging structure disclosed in this disclosure. In some embodiments, the flip-chip bonding-based antenna packaging structure disclosed in this disclosure can also have the advantages of good heat dissipation and a higher applicable bandwidth.

[0015] Referring to Figures 1 to 6, which are schematic cross-sectional views of different stages of the manufacturing process of an antenna package structure based on flip-chip bonding according to some embodiments of the present disclosure, it is worth noting that, for the sake of simplicity, Figures 1 to 6 only show one active element for illustration. However, those skilled in the art can arrange multiple active elements (e.g., a first active element and a second active element) sequentially or simultaneously in an antenna package structure based on flip-chip bonding using similar or identical processes. These multiple active elements can be similar or identical to each other and arranged in corresponding positions. Therefore, those skilled in the art will understand that a second active element (e.g., the second active element 132 in Figure 9A) can be arranged on one side of the first active element (e.g., the first active element 131 in Figure 9A) using steps similar or identical to those shown in Figures 1 to 6, thereby achieving heterogeneous integration of multiple chips. Of course, the present disclosure is not limited thereto. In other embodiments, those skilled in the art will understand that similar or identical steps as shown in Figures 1 to 6 can be used to sequentially or simultaneously provide more active elements, such as three, four or more.

[0016] As shown in Figure 1, a method for manufacturing an antenna package structure based on flip-chip bonding includes: providing a carrier plate 10 for carrying a first dielectric layer 11 and an electrical connector 12 to be disposed thereon. In some embodiments, the carrier plate 10 may be or may include: group IV elements or group IV compounds, such as silicon (Si), diamond (C), silicon carbide (SiC); group III-V compounds, such as gallium nitride (GaN), aluminum gallium nitride (AlGaN), aluminum nitride (AlN), gallium phosphide (GaP), gallium arsenide (GaAs), aluminum gallium arsenide (AlGaAs); other suitable materials; or combinations thereof, but this disclosure is not limited thereto. In some embodiments, the carrier plate 10 may be or may include glass, quartz, sapphire, ceramic, other suitable materials, or combinations thereof, but this disclosure is not limited thereto. In some embodiments, the carrier plate 10 may be or may include polyimide (PI), polycarbonate (PC), polyethylene terephthalate (PET), polypropylene (PP), other suitable materials, or combinations thereof, but this disclosure is not limited thereto. In some embodiments, the carrier plate 10 may be or may include a flexible substrate, a soft substrate, a rigid substrate, or a combination thereof, but this disclosure is not limited thereto.

[0017] Following the above steps, a first dielectric layer 11 is provided on the carrier 10, wherein the first dielectric layer 11 has a first surface 11A and a second surface 11B opposite to each other. For example, the first dielectric layer 11 can be formed by a coating process, a curing process, a layering process, other suitable methods or combinations thereof, but this disclosure is not limited thereto. In some embodiments, the first dielectric layer 11 may be or may include thermosetting or UV-curable polyimide (PI), colorless polyimide (CPI), photosensitive polyimide (PSPI), polybenzoxazole (PBO), liquid crystal polymer (LCP), other suitable materials or combinations thereof, but this disclosure is not limited thereto. In some embodiments, the first dielectric layer 11 may be a single layer or a multilayer structure.

[0018] Following the above steps, an electrical connector 12 is formed in the first dielectric layer 11. For example, the electrical connector 12 can be formed by electroplating, photolithography, other suitable methods or combinations thereof, depending on the actual situation. In some embodiments, the electrical connector 12 may be or may include a conductive material. For example, the conductive material may include metals, metal compounds, other suitable conductive materials or combinations thereof, but this disclosure is not limited thereto. For example, metals may be tin (Sn), copper (Cu), gold (Au), silver (Ag), nickel (Ni), indium (In), platinum (Pt), palladium (Pd), iridium (Ir), titanium (Ti), chromium (Cr), tungsten (W), aluminum (Al), molybdenum (Mo), titanium (Ti), magnesium (Mg), zinc (Zn), germanium (Ge), or alloys thereof. For example, metal compounds may be tantalum nitride (TaN), titanium nitride (TiN), tungsten silicon (WSi2), indium tin oxide (ITO), etc. In embodiments where the first dielectric layer 11 has a multilayer structure, the electrical connector 12 may include a vertical connector and a plurality of patterned circuit layers, with the vertical connector used to connect the plurality of patterned circuit layers. In some embodiments, the two ends of the electrical connector 12 are exposed from a first surface 11A and a second surface 11B of the first dielectric layer 11, respectively, to electrically connect active or passive elements to be disposed on the two surfaces of the first dielectric layer 11. The active element may be or may include a power chip, a low-noise filter chip, a switching element, other suitable chips, or combinations thereof, depending on the specific circumstances. The passive element may be a resistive element, a capacitive element, or may include an antenna.

[0019] As shown in Figure 2, continuing the above steps, a first active element 131 and a second active element (not shown in Figure 2, but refer to the second active element 132 in Figure 9A) are disposed on the first surface 11A of the first dielectric layer 11, and the first active element 131 and the second active element (e.g., the second active element 132 in Figure 9A) are electrically connected to the electrical connector 12. For example, the first active element 131 can be attached to the first surface 11A by means of pads, solder, or other suitable elements or combinations thereof, but this disclosure is not limited thereto.

[0020] As shown in Figure 3, following the steps described above, a metal element 14 is provided on the first active element 131 and the second active element (e.g., the second active element 132 in Figure 9A), and the metal element 14 serves as a support (or lead frame) for the flip-chip bond-based antenna package structure. For example, the metal element 14 can be attached to the first active element 131 by means of pads, solder, or other suitable components or combinations thereof. The provision of the metal element 14 improves the support of the entire flip-chip bond-based antenna package structure, thereby preventing warpage. In addition, the metal element 14, being a good conductor of heat and electricity, can quickly transfer the heat energy of the first active element 131 and the second active element to the outside, so that the flip-chip bond-based antenna package structure can be kept at an appropriate operating temperature.

[0021] In some embodiments, the metal component 14 includes a base 140, an extension 141, a first support portion 142, and a second support portion (not shown in Figure 3, but reference can be made to the second support portion 143 in Figure 9A). Specifically, the base 140 extends in a horizontal direction (i.e., parallel to the carrier plate 10) and supports components located thereon (e.g., the extension 141, the first support portion 142, and the second support portion 143). In some embodiments, viewed from above, the area of ​​the base 140 may occupy more than 50% of the area of ​​the entire flip-chip bond-based antenna package structure. For example, the area of ​​the base 140 may occupy 50% of the area of ​​the entire flip-chip bond-based antenna package structure or any value or range between the above values, but this disclosure is not limited thereto. By increasing the area ratio of the base 140, the heat dissipation effect of the entire flip-chip bond-based antenna package structure can be improved.

[0022] The extension 141 is located on the base 140 and extends in a vertical direction (i.e., perpendicular to the carrier plate 10), wherein the extension 141 is connected to the electrical connector 12, such as an electrical connection and a physical connection. In some embodiments, the extension 141 may partially or completely surround the side of the first active element 131 or the second active element (e.g., the second active element 132 in Figure 9A) to shield the active element and prevent it from being interfered with by signals from the surroundings. For example, the extension 141 may be located between the first active element 131 and the second active element (e.g., the second active element 132 in Figure 9A) to prevent the signals of the first active element 131 and the second active element (e.g., the second active element 132 in Figure 9A) from interfering with each other. In addition, the extension 141 may be electrically connected to the passive element 16 to be subsequently installed via the electrical connector 12 and receive the heat generated by the passive element 16 during operation to improve the heat dissipation effect of the flip-chip bond-based antenna package structure.

[0023] The first support portion 142 protrudes from the base 140 and directly contacts the first active element 131. Specifically, the first support portion 142 is located between the first active element 131 and the base 140. In other words, the metal part 14 can be adapted to various active elements by adjusting the height of the first support portion 142. For example, when the size (e.g., thickness) of the first active element 131 is large, the height of the first support portion 142 can be reduced so that the metal part 14 can adhere to the first active element 131 without squeezing it. Conversely, when the size (e.g., thickness) of the first active element 131 is small, the height of the first support portion 142 can be increased so that the metal part 14 can support the first active element 131 without separating from it. Similarly, the second support portion (refer to the second support portion 143 in Figure 9A) protrudes from the base 140 and directly contacts the second active element (refer to the second active element 132 in Figure 9A).

[0024] In some embodiments, the various components of the metal part 14 (e.g., base 140, extension 141, first support portion 142, and second support portion 143) may be integrally formed. In other words, an integral metal part 14 may be formed first, and then the metal part 14 may be joined to the first active element 131 and the electrical connector 12. However, this disclosure is not limited thereto. In other embodiments, the various components of the metal part 14 (e.g., base 140, extension 141, first support portion 142, and second support portion 143) may be sequentially disposed on the first active element 131 and the electrical connector 12, and then the various components of the metal part 14 may be connected together by welding, bonding, other suitable methods, or combinations thereof.

[0025] As shown in Figure 4, following the above steps, after the metal component 14 is provided, a second dielectric layer 15 is filled between the metal component 14 and the first dielectric layer 11. It is worth mentioning that, in the following text, the active elements (e.g., the first active element 131 and the second active element 132), the metal component 14 and the second dielectric layer 15 can be collectively referred to as the lead frame structure LFS.

[0026] In some embodiments, the second dielectric layer 15 may be or may include thermosetting or UV-curable polyimide (PI), transparent polyimide (CPI), photosensitive polyimide (PSPI), polybenzoxazole (PBO), liquid crystal polymer (LCP), other suitable materials or combinations thereof, but this disclosure is not limited thereto. In some embodiments, the material of the second dielectric layer 15 may be similar to or the same as the material of the first dielectric layer 11, but this disclosure is not limited thereto.

[0027] In some embodiments, the base 140 of the metal component 14 may be exposed from the bottom surface 15B of the second dielectric layer 15. Further, the base 140 of the metal component 14 may be coplanar with the bottom surface 15B of the second dielectric layer 15. In this case, the exposed base 140 can exchange heat with the outside environment (e.g., through thermal radiation or thermal convection) to achieve a heat dissipation effect. In some cases, the exposed base 140 may also serve as a contact (or pin) for electrical connection with other components.

[0028] In some embodiments, the sidewall 14C of the metal element 14 may be exposed from the sidewall 15C of the second dielectric layer 15. Further, the sidewall 14C of the metal element 14 may be coplanar with the sidewall 15C of the second dielectric layer 15. In this case, the sidewall 14C of the metal element 14 can serve as a contact (or pin) for electrical connection with other components. In other words, the metal element 14 disclosed herein can be electrically connected to other components via either its bottom or side surfaces, thereby improving design flexibility.

[0029] As shown in Figure 5, following the steps described above, the carrier plate 10 is removed to expose the second surface 11B of the first dielectric layer 11 and the electrical connector 12. For example, the carrier plate 10 can be removed by physical destruction, etching, other suitable processes, or a combination thereof, but this disclosure is not limited thereto. In some embodiments, after removing the carrier plate 10, a cleaning process such as chemical mechanical polishing can be performed to clean the exposed first dielectric layer 11 and electrical connector 12.

[0030] As shown in Figure 6, following the above steps, a passive element 16 is disposed on the electrical connector 12, wherein the passive element 16 is electrically connected to the electrical connector 12. It is worth mentioning that, in the following text, the passive element 16, the first dielectric layer 11, and the electrical connector 12 can be collectively referred to as a redistribution structure RDS. In this case, a patterned metal layer can be formed on the second surface 11B of the first dielectric layer 11 by electroless nickel / Immersion Gold (ENIG), electroless nickel / palladium / Immersion Gold (ENEPIG), electroplating process, patterning process, other similar processes, or combinations thereof, and this is used to prevent oxidation of the passive element 16.

[0031] Optionally, in some embodiments, a patterned metal layer 140' may be additionally formed on the coplanar surface of the metal part 14 and the second dielectric layer 15 by electroless nickel immersion gold plating, electroless nickel-palladium immersion gold plating, electroplating, patterning, other similar processes, or combinations thereof, as an application to prevent oxidation of the metal part 14. In some embodiments, the step of forming a patterned metal layer on the second surface 11B of the first dielectric layer 11 and the step of forming a patterned metal layer 140' on the coplanar surface of the metal part 14 and the second dielectric layer 15 may be the same process or different processes, and this disclosure is not limited thereto. In some embodiments, the material of the patterned metal layer 140' may be the same as or different from the material of the base 140 of the metal part 14.

[0032] It is worth mentioning that the above steps are merely examples, and this disclosure is not limited thereto. For example, some of the above steps can be replaced by the steps in Figures 7 and 8. Figures 7 and 8 are schematic cross-sectional views of the antenna packaging structure based on flip-chip bonding at different stages of the manufacturing process, according to other embodiments of this disclosure.

[0033] As shown in Figure 7, following the steps in Figure 2, after setting the first active element 131 and the second active element (e.g., the second active element 132 in Figure 9A), the extension 141, the first support portion 142, and the second support portion (not shown in Figure 7, but refer to the second support portion 143 in Figure 9A) of the metal part 14 are set on the first active element 131 and the second active element (not shown), but the base 140 is not set. In other words, in these embodiments, the various components of the metal part 14 (e.g., the base 140, the extension 141, the first support portion 142, and the second support portion 143) are not integrally formed. The extension 141, the first support portion 142, and the second support portion 143 are set in this step, while the base 140 is set in a subsequent step.

[0034] Following the above steps, after providing the extension 141, the first support portion 142, and the second support portion (not shown), a second dielectric layer 15 is filled between the metal part 14 and the first dielectric layer 11. Following the above steps, a passive element 16 is provided on the electrical connector 12. For example, the second dielectric layer 15 can be filled around the first support portion 142, the second support portion (not shown), and the extension 141 so that the second dielectric layer 15 is coplanar with the first support portion 142, the second support portion (not shown), and the extension 141.

[0035] As shown in Figure 8, following the steps described above, a base 140 is provided on the second dielectric layer 15, the extension 141, the first support portion 142, and the second support portion (not shown). For example, a plating process such as sputtering or deposition can be used to form the base 140. The metal part 14 provided in the above manner can have at least the following advantageous effects. For example, this approach can improve the problem of poor interfacial bonding between the second dielectric layer 15 and the metal part 14. Alternatively, since the base 140 formed by the plating process is usually thin (e.g., less than 20 µm), this approach can also reduce warping between components due to stress mismatch by using a thinner base 140. Of course, other methods can also be used to sequentially or independently form the various components of the metal part 14 to meet different product requirements.

[0036] After the above steps, an antenna package structure based on flip-chip bonding is obtained. Referring also to Figures 9A and 9D, which are respectively a cross-sectional view and a top view of an antenna package structure based on flip-chip bonding according to some embodiments of this disclosure. As shown, the antenna package structure based on flip-chip bonding includes a lead frame structure (LFS) and a redistribution structure (RDS). The lead frame structure (LFS) includes a metal element 14, a first active element 131, a second active element 132, and a second dielectric layer 15. The metal element 14 includes a base 140, an extension 141, a first support portion 142, and a second support portion 143. The first active element 131 is disposed on the first support portion 142. The second active element 132 is disposed on the second support portion 143. The second active element 132 is located on one side of the first active element 131, and the two are separated by the extension 141 of the metal element 14. The second dielectric layer 15 fills the space between the metal element 14 and the redistribution structure (RDS).

[0037] The redistribution structure (RDS) is disposed on the lead frame structure (LFS) and includes a first dielectric layer 11, an electrical connector 12, and a passive element 16. The first dielectric layer 11 is disposed on the first active element 131 and the second active element 132. The electrical connector 12 is disposed in the first dielectric layer 11 and electrically connects the first active element 131 and the second active element 132. The passive element 16 is disposed on the first dielectric layer 11 and is electrically connected to the first active element 131 and the second active element 132 via the electrical connector 12.

[0038] In this embodiment, the size of the first active element 131 is the same as the size of the second active element 132. For example, the first active element 131 may have a first thickness T1, and the second active element 132 may have a second thickness T2, and the first thickness T1 is the same as the second thickness T2. In this case, the distance D1 between the first carrier portion 142 and the first dielectric layer 11 (corresponding to the first thickness T1) is the same as the distance D2 between the second carrier portion 143 and the first dielectric layer 11 (corresponding to the second thickness T2).

[0039] However, this disclosure is not limited thereto. Since the first carrier portion 142 and the second carrier portion 143 of the metal component 14 can be adjusted according to design requirements, the flip-chip bonding-based antenna packaging structure disclosed herein can be applied to heterogeneous wafers of different sizes. For example, referring to Figures 9B and 9C, which are schematic cross-sectional views of antenna packaging structures based on flip-chip bonding according to some and yet others embodiments of this disclosure, respectively. As shown in Figure 9B, in this embodiment, the first thickness T1 of the first active element 131 is greater than the second thickness T2 of the second active element 132. In this case, the distance D1 between the first carrier portion 142 and the first dielectric layer 11 is greater than the distance D2 between the second carrier portion 143 and the first dielectric layer 11. As shown in Figure 9C, in this embodiment, the first thickness T1 of the first active element 131 is less than the second thickness T2 of the second active element 132. In this case, the distance D1 between the first carrier portion 142 and the first dielectric layer 11 is less than the distance D2 between the second carrier portion 143 and the first dielectric layer 11. In other words, this disclosure enables multi-chip heterogeneous integration in an antenna package structure based on flip-chip bonding by adjusting the size of the metal part 14.

[0040] In some embodiments, in addition to thickness, the first active element 131 and the second active element 132 may also have different widths, lengths, or shapes. Alternatively, the first active element 131 and the second active element 132 may also comprise different chips to achieve different functions. For example, the first active element 131 may be a radio frequency chip corresponding to a first frequency band, and the second active element 132 may be a radio frequency chip corresponding to a second frequency band, wherein the first frequency band is different from the second frequency band.

[0041] In some embodiments, the first dielectric layer 11 has a central region CA and a peripheral region PA surrounding the central region CA. A passive element 16 (such as an antenna) is disposed within the central region CA. A first active element 131 and a second active element 132 are disposed below the peripheral region PA. The metal member 14 further includes a ground portion 144 located below the central region CA. As the bandwidth of the antenna increases, the thickness of the dielectric material (i.e., the first dielectric layer 11 and the second dielectric layer 15) between the antenna and the ground portion 144 needs to be greater. For this purpose, the distance between the passive element 16 and the metal member 14 is increased by adjusting the height of the extension 141. For example, in the central region CA, the distance D3 between the passive element 16 and the metal member 14 can be at least 200 µm or more, such as 201 µm, 300 µm, 400 µm, 500 µm, 600 µm, 700 µm, 1000 µm or any value or range between the above values.

[0042] In some embodiments, no metal or wafer is disposed in the dielectric material (i.e., the first dielectric layer 11 and the second dielectric layer 15) between the passive element 16 located in the central region CA and the ground portion 144 below it. Specifically, no active elements (such as wafers), circuit layers, electrical connectors, or other conductive materials are disposed in the first dielectric layer 11 or the second dielectric layer 15. This arrangement can effectively reduce electromagnetic interference (EMI) and signal crosstalk, thereby improving the stability and integrity of radio frequency signals and avoiding problems such as signal distortion, reflection, or delay caused by metal or wafer configuration. Furthermore, by filling more dielectric material between these dielectric layers, the applicable bandwidth range of the flip-chip bonding-based antenna package structure can be effectively increased.

[0043] In some applications disclosed herein, the operating bandwidth (BW), the total thickness of the dielectric materials (i.e., the first dielectric layer 11 and the second dielectric layer 15), and the dielectric constant (Dk, εr) of the flip-chip bonding-based antenna packaging structure exhibit a relationship. For example, when the material of the first dielectric layer 11 is different from the material of the second dielectric layer 15, or when the interface between the first dielectric layer 11 and the second dielectric layer 15 is not perfectly matched, the relationship can be expressed as Equation 1 in Table 1 below. Wherein, BW refers to the operating bandwidth, h1 refers to the thickness of the first dielectric layer 11, ε1 refers to the dielectric constant (Dk, εr) of the first dielectric layer 11, h2 refers to the thickness of the second dielectric layer 15, and ε2 refers to the dielectric constant (Dk, εr) of the second dielectric layer 15.

[0044] Among them, Equation 1 is

[0045] In some embodiments, the dielectric constant (Dk) of the first dielectric layer 11 and / or the second dielectric layer 15 may be less than 4.0, and the dissipation factor (Df) of the first dielectric layer 11 and / or the second dielectric layer 15 may be less than 0.004. In some embodiments, the total thickness of the dielectric material (i.e., the first dielectric layer 11 and the second dielectric layer 15) is as thick as possible, taking into account radiation attenuation.

[0046] In some applications disclosed herein, the total thickness of the flip-chip bonding-based antenna package structure can be between 180µm and 270µm. As shown in Figure 9A, for example, the base 140 of the metal element 14 has a third thickness T3, which can be between 70µm and 130µm. The second dielectric layer 15 has a fourth thickness T4, which can be between 170µm and 230µm. The first dielectric layer 11 has a fifth thickness T5, which can be between 10µm and 40µm. Generally speaking, the thickness ratio (T5:T4) between the first dielectric layer 11 and the second dielectric layer 15 can be between 1:18 and 1:6, and / or the thickness ratio (T3:T4) between the base 140 and the second dielectric layer 15 can be between 1:2 and 1:1.5. By giving the flip-chip bonded antenna package structure the aforementioned thickness or proportions, warping of the flip-chip bonded antenna package structure can be effectively avoided. It is worth noting that the specific values ​​mentioned above are merely examples, and this disclosure is not limited thereto.

[0047] In some applications of this disclosure, the operating bandwidth (BW) of the flip-chip bonding-based antenna package structure can be 60 GHz. In this case, the total thickness of the dielectric material (i.e., the first dielectric layer 11 and the second dielectric layer 15) can be in the range of 1% to 5% of the standard wavelength of 5 mm, i.e., between 0.05 mm and 0.25 mm. In other applications of this disclosure, the operating bandwidth (BW) can be 70 GHz. In this case, the total thickness of the dielectric material can be in the range of 1% to 5% of the standard wavelength of 4.29 mm, i.e., between 0.043 mm and 0.215 mm. In still other applications of this disclosure, the operating bandwidth (BW) can be as high as 100 GHz. In this case, the total thickness of the dielectric material can be in the range of 1% to 5% of the standard wavelength of 3 mm, i.e., between 0.03 mm and 0.15 mm. In other words, even with operating bandwidths (BW) up to 100 GHz, this disclosure can still employ various wafers, as long as the thickness of these wafers remains less than 0.15 mm. For example, in some applications of this disclosure, the thickness of the first active element 131 and / or the second active element 132 can be between 80 µm and 120 µm, for example, 100 µm, but this disclosure is not limited to this.

[0048] The flip-chip bonding-based antenna package structure and its manufacturing method have been generally disclosed above according to some embodiments of the present disclosure. However, the present disclosure is not limited thereto. In other embodiments, the specific functions of the flip-chip bonding-based antenna package structure can be enhanced by adjusting the shape or size of the metal part 14, and the flip-chip bonding-based antenna package structure can be made more flexible in design. For further illustration, reference can be made to Figures 10 to 14, which are schematic cross-sectional views showing different configurations of the flip-chip bonding-based antenna package structure according to some embodiments of the present disclosure.

[0049] As shown in Figure 10, an antenna packaging structure based on flip-chip bonding is illustrated. Unlike the embodiment in Figure 6, the extension 141 of the metal member 14 and the base 140 can together form an "L-shaped structure." More specifically, in this embodiment, the extension 141 located on one side (left side) of the first active element 131 is connected to the base 140 located below the first active element 131, thereby forming the aforementioned "L-shaped structure." Furthermore, the extension 141 located on the other side (right side) of the first active element 131 is not connected to the base 140 located below the first active element 131, and together they form an opening OP.

[0050] As shown in Figure 11, an antenna packaging structure based on flip-chip bonding is illustrated. Unlike the embodiment in Figure 6, the extension 141 of the metal member 14 and the base 140 can together form a "U-shaped structure." More specifically, in this embodiment, the extensions 141 located on both sides of the first active element 131 are connected to the base 140 located below the first active element 131, thereby forming the aforementioned "U-shaped structure."

[0051] As shown in Figure 12, an antenna package structure based on flip-chip bonding is illustrated. In this embodiment, the extension 141 surrounds the first active element 131 located in the peripheral region PA, and the extension 141 surrounds the second dielectric layer 15 located in the central region CA. Furthermore, in this embodiment, the base 140 of the metal member 14 extends continuously from below the central region CA of the first dielectric layer 11 to below the peripheral region PA of the first dielectric layer 11. This prevents external signals from interfering with the first active element 131 and maintains the electrical characteristics of the central region CA of the flip-chip bonding-based antenna package structure.

[0052] As shown in Figure 13, an antenna package structure based on flip-chip bonding is illustrated. Unlike the embodiment in Figure 12, the metal component 14 is not integrally formed. More specifically, the base 140 and the extension 141 of the metal component 14 are two separate elements, joined together by soldering, bonding (e.g., adhesive 17), other suitable methods, or combinations thereof. In this case, the design flexibility of the antenna package structure based on flip-chip bonding is improved.

[0053] As shown in Figure 14, an antenna package structure based on flip-chip bonding is illustrated. Unlike the embodiment in Figure 13, the extension 141 of the metal member 14 and the base 140 can together form a "U-shaped structure," and the base 140 of the metal member 14 does not extend continuously from below the central region CA of the first dielectric layer 11 to below the peripheral region PA of the first dielectric layer 11. In this case, the design flexibility of the antenna package structure based on flip-chip bonding can be improved.

[0054] In addition to the above-described configurations, other components may be further provided on the lead frame structure LFS and the redistribution structure RDS in other embodiments. For further explanation, please refer to Figures 15 to 18, which are schematic cross-sectional views showing different configurations of the flip-chip bonding-based antenna package structure according to some embodiments of this disclosure.

[0055] As shown in Figure 15, in some embodiments, a circuit board CB1, such as a low-temperature co-fired ceramic (LTCC) substrate or a high-density interconnect (HDI) substrate, may be further disposed on the redistribution structure RDS to improve the device performance of the flip-chip bonded antenna package structure. Alternatively, as shown in Figure 16, in some embodiments, a circuit board CB2 comprising plastic may be further disposed on the redistribution structure RDS to improve the device performance of the flip-chip bonded antenna package structure.

[0056] As shown in Figure 17, in some embodiments, a circuit board CB3, such as a low-temperature co-fired ceramic substrate (LTCC) or a high-density interconnect substrate (HDI), may be further disposed on the redistribution structure RDS, and other passive components 18 (e.g., antennas) may be disposed on these substrates to improve the device performance of the flip-chip bond-based antenna package structure. Alternatively, as shown in Figure 18, in some embodiments, in addition to the circuit board CB3, such as a low-temperature co-fired ceramic substrate (LTCC) or a high-density interconnect substrate (HDI), and passive components 18 disposed on the redistribution structure RDS, a circuit board CB4, such as a printed circuit board (PCB), may also be disposed below the lead frame structure LFS. In other words, the flip-chip bond-based antenna package structure disclosed herein can also significantly improve applicability and design flexibility by simply combining the redistribution structure RDS, the lead frame structure LFS, and other structures, thereby solving some problems in the prior art.

[0057] In summary, this disclosure provides an antenna packaging structure based on flip-chip bonding and its manufacturing method. By combining the lead frame structure and the redistribution structure, it not only realizes the packaging of heterogeneous chips, but also has the advantages of good heat dissipation and high applicable bandwidth.

[0058] Components in the embodiments disclosed herein may be arbitrarily mixed and matched as long as they do not violate the spirit of the invention or conflict with it. Furthermore, the scope of protection of this disclosure is not limited to the processes, machines, manufacturing, material composition, apparatus, methods, and steps described in the specific embodiments of the specification. Any process, machine, manufacturing, material composition, apparatus, method, and step that is currently or will be developed in the future can be understood from the content of this disclosure, and can be used according to this disclosure as long as it can perform substantially the same function or obtain substantially the same result in the embodiments described herein. Therefore, the scope of protection of this disclosure includes the aforementioned processes, machines, manufacturing, material composition, apparatus, methods, and steps. No embodiment or claim of this disclosure needs to achieve all the purposes, advantages, and / or features disclosed herein.

[0059] Several embodiments have been summarized above to enable those skilled in the art to better understand the viewpoints of the embodiments disclosed herein. Those skilled in the art should understand that other processes and structures can be designed or modified based on the embodiments disclosed herein to achieve the same purpose and / or advantages as the embodiments described herein. Those skilled in the art should also understand that such equivalent processes and structures do not depart from the spirit and scope of this disclosure, and that various changes, substitutions, and replacements can be made without departing from the spirit and scope of this disclosure. [Simplified Explanation of the Diagram]

[0007] The viewpoints of the embodiments disclosed herein will be better understood through the following detailed description in conjunction with the accompanying drawings. It is worth noting that, according to industry standard practice, some features may not be drawn to scale. In fact, the dimensions of different features may be increased or decreased for clarity of description. Figures 1 to 6 are schematic cross-sectional views of the antenna package structure based on flip-chip bonding at different stages of the manufacturing process according to some embodiments of the present disclosure. Figures 7 and 8 are schematic cross-sectional views of the antenna package structure based on flip-chip bonding at different stages of the manufacturing process according to other embodiments of the present disclosure. Figure 9A is a schematic cross-sectional view of the antenna package structure based on flip-chip bonding according to some embodiments of the present disclosure. Figure 9B is a schematic cross-sectional view of the antenna package structure based on flip-chip bonding according to other embodiments of the present disclosure. Figure 9C is a schematic cross-sectional view of the antenna package structure based on flip-chip bonding according to yet another embodiment of the present disclosure. Figure 9D is a top view of the antenna package structure based on flip-chip bonding according to some embodiments of the present disclosure. Figures 10 to 14 are schematic cross-sectional views showing different configurations of the flip-chip bonding-based antenna package structure according to other embodiments of the present disclosure. Figures 15 to 18 are schematic cross-sectional views showing different configurations of the flip-chip bonding-based antenna package structure according to yet another embodiment of the present disclosure.

Claims

1. A packaging structure based on flip-chip bonding, comprising: A single wiring structure includes a first surface and a second surface that are opposite to each other; The redistribution structure includes: a metal component comprising a base, a first support portion extending vertically on the base, an extension portion adjacent to the first support portion, and a second support portion parallel to the extension portion, the extension portion extending from the base to be attached to the first surface and the first support portion being parallel to the extension portion; a first active element disposed between the first support portion and the first surface for attachment to the first surface; a second active element disposed between the second support portion and the first surface for attachment to the first surface; and a passive element disposed on the second surface for electrical connection to the first active element.

2. The flip-chip bonding based packaging structure as described in claim 1, wherein the distance between the first carrier portion and the first surface is different from the distance between the second carrier portion and the first surface.

3. The flip-chip bonding based packaging structure as described in claim 1, wherein the redistribution structure has a central region and a peripheral region surrounding the central region, the passive element is disposed in the central region, and the first active element and the second active element are disposed below the peripheral region.

4. The flip-chip bonding based package structure as described in claim 3, wherein the passive element includes a capacitor, resistor, inductor, or antenna.

5. The flip-chip bonding based packaging structure as described in claim 1, wherein the extension is located between the first active element and the second active element.

6. The flip-chip bonding based packaging structure as described in claim 1, wherein the leadframe structure further includes a dielectric layer disposed around the base, the first carrier portion and the extension portion such that the dielectric layer and the extension portion are coplanar.

7. The flip-chip bonding based packaging structure as described in claim 6, wherein the redistribution structure further includes a sidewall that is coplanarly formed by the sidewall of the metal component and the sidewall of the dielectric layer.

8. The flip-chip bonding based packaging structure as described in claim 1, wherein the passive element or the first active element is not disposed between the base and the second surface on one side of the extension or the first active element.

9. The flip-chip bonding based packaging structure as described in claim 1, wherein the metal component further includes a patterned metal layer and the patterned metal layer covers the outer surface of the substrate.

10. A method for manufacturing a packaging structure based on flip-chip bonding, comprising: A rewiring structure is provided on a carrier board, wherein the rewiring structure has a first surface and a second surface opposite to each other; A first active element is disposed on a first surface; a metal part is disposed on the first active element, wherein the metal part includes a base, a first support portion extending vertically on the base, an extension portion adjacent to the first support portion, and a second support portion parallel to the extension portion, the extension portion extending from the base to be attached to the first surface and the first support portion being parallel to the extension portion, and the first active element is disposed between the first surface and the first support portion; Remove the carrier plate to expose the second surface; place a passive element on the second surface for electrical connection to the first active element; And after the first active element is disposed on the first surface, a second active element is disposed between the first surface and the second support portion, wherein the second active element is electrically connected to the passive element.

11. A method for manufacturing a flip-chip bonding-based packaging structure as described in claim 10, wherein the distance between the first carrier portion and the first surface is the same as the distance between the second carrier portion and the first surface.

12. A method of manufacturing a flip-chip bonding based package structure as claimed in claim 10, wherein the redistribution structure has a central region and a peripheral region surrounding the central region, the passive element is disposed in the central region, and the first active element and the second active element are disposed below the peripheral region.

13. A method of manufacturing a flip-chip bonding based package structure as described in claim 10, wherein the extension is located between the first active element and the second active element.

14. The method for manufacturing a package structure based on flip-chip bonding as described in claim 10 further includes: After the step of setting the metal part, a second dielectric layer is filled around the base, the first support portion and the extension portion so that the second dielectric layer is coplanar with the base.

15. A method for manufacturing a flip-chip bonding based package structure as described in claim 14, wherein the redistribution structure further includes a sidewall that is coplanarly formed by the sidewall of the metal component and the sidewall of the second dielectric layer.

16. The method for manufacturing a package structure based on flip-chip bonding as described in claim 14 further includes: After the step of filling the second dielectric layer, a patterned metal layer is formed on the coplanar surface of the metal part and the second dielectric layer.

17. The method for manufacturing a flip-chip bond-based packaging structure as described in claim 10, wherein the step of setting the metal component includes: The extension and the first support portion are provided on the first active element; A second dielectric layer is filled around the first support portion and the extension portion such that the second dielectric layer is coplanar with the first support portion and the extension portion; and the base is provided on the second dielectric layer, the extension portion and the first support portion.

18. A method of manufacturing a flip-chip bond-based package structure as described in claim 10, wherein the passive element or the first active element is not disposed between the base and the second surface on one side of the extension or the first active element.

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