Advanced packaging component with high thermal conductivity and manufacturing method thereof

Abstract

This invention discloses an advanced packaging device with high thermal conductivity and its fabrication method. The advanced packaging device includes a substrate and a three-dimensional thermally conductive pattern. The substrate has a first surface and a second surface opposite to each other. The substrate is formed of a high-rigidity material and has a heat source contact area. The three-dimensional thermally conductive pattern is formed within the heat source contact area to constitute at least one heat conduction path between the first surface and the second surface. The three-dimensional thermally conductive pattern is formed of a high thermal conductivity material, and the at least one heat conduction path has a thermal conductivity greater than 500 W / mK. Therefore, it not only meets the heat dissipation requirements of advanced packaging chips but also simplifies the manufacturing process, improves yield, and reduces costs.

Claims

1. An advanced packaged device with high thermal conductivity, comprising: A plate having a first surface and a second surface opposite to each other, wherein the plate is formed of a high-rigidity material and has a heat source contact area; A three-dimensional thermally conductive pattern is formed within the heat source contact area to constitute at least one heat conduction path between the first surface and the second surface, wherein the three-dimensional thermally conductive pattern is formed of a high thermal conductivity material, and the at least one heat conduction path has a thermal conductivity greater than 500 W / mK; wherein the high rigidity material is at least one of aluminum silicon carbide, wafer material, high rigidity plastic and high rigidity metal material, and the high thermal conductivity material is at least one of diamond, diamond-like carbon, graphene and high thermal conductivity alloy.

2. The advanced packaged device with high thermal conductivity as described in claim 1, wherein, The wafer material is silicon, silicon carbide, or gallium nitride; the high-rigidity plastic is polyimide; and the high-rigidity metal material is molybdenum or nickel.

3. The advanced packaged device with high thermal conductivity as described in claim 1, wherein, The plate has at least one perforation located within the heat source contact area and penetrating the first surface and the second surface, and the three-dimensional thermally conductive pattern includes at least one thermally conductive pillar filled in the at least one perforation.

4. The advanced packaged device with high thermal conductivity as described in claim 3, wherein, The at least one perforation is a plurality of perforations arranged in a row or an array, and the at least one heat-conducting pillar is a plurality of heat-conducting pillars respectively filling the plurality of perforations.

5. The advanced packaged device with high thermal conductivity as described in claim 3 or 4, wherein, The at least one heat-conducting pillar is formed by stacking multiple diamond particles.

6. The advanced packaged device with high thermal conductivity as described in claim 3 or 4, wherein, The diameter of the at least one perforation on the first surface is smaller than the diameter of the at least one perforation on the second surface.

7. The advanced packaged device with high thermal conductivity as described in claim 1, wherein, The plate has at least one slot located within the heat source contact area and penetrating the first surface and the second surface, and the three-dimensional thermally conductive pattern includes at least one thermally conductive sheet embedded in the at least one slot; wherein the at least one thermally conductive sheet is elongated or mesh-like.

8. The advanced packaged device with high thermal conductivity as described in claim 7, wherein, The at least one heat-conducting sheet has a multi-layered mesh structure, and the meshes of the upper and lower layers of the multi-layered mesh structure are staggered.

9. The advanced packaged device with high thermal conductivity as described in claim 1, wherein, The plate includes an aluminized silicon carbide substrate and an aluminum foil layer covering the aluminized silicon carbide substrate.

10. The advanced packaged device with high thermal conductivity as described in claim 9, wherein, The aluminized silicon carbide substrate includes a silicon carbide-based porous ceramic substrate and a solid aluminum-based metal diffused into and filling the pores of the silicon carbide-based porous ceramic substrate.

11. The advanced packaged device with high thermal conductivity as described in claim 10, wherein, The silicon carbide-based porous ceramic substrate is composed of small-diameter particles, medium-diameter particles, and large-diameter particles, and the particle size ratio of the small-diameter particles, the medium-diameter particles, and the large-diameter particles is 1:2-2.5:3-20.

12. The advanced packaged device with high thermal conductivity as described in claim 11, wherein, The small-diameter particles have a diameter in the range of 0.1 μm to 5 μm, the medium-diameter particles have a diameter in the range of 2 μm to 10 μm, and the large-diameter particles have a diameter in the range of 10 μm to 100 μm.

13. The advanced packaged device with high thermal conductivity as described in claim 11, wherein, Based on the total weight of the silicon carbide-based porous ceramic substrate, the weight ratio of the small-diameter particles, the medium-diameter particles, and the large-diameter particles is 1:3:

4.

14. A method for fabricating an advanced packaged device with high thermal conductivity as described in claim 1, comprising: The high-rigidity material is formed into a preform, and the high-thermal-conductivity material is formed into the three-dimensional thermally conductive pattern and placed into the preform; And the preform containing the three-dimensional thermally conductive pattern is press-molded.

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