Semiconductor apparatus comprising semiconductor power device

Abstract

A semiconductor device including semiconductor power elements. The semiconductor device includes a primary power transistor, an auxiliary power transistor, a driving element, a first resistive element, and a second resistive element. The auxiliary power transistor is connected in parallel with the primary power transistor. The driving element is electrically connected to a first gate of the primary power transistor and to a second gate of the auxiliary power transistor. The first resistive element is electrically connected between the first gate and the driving element. The second resistive element is electrically connected between the second gate and the driving element. The resistance value of the second resistive element is less than the resistance value of the first resistive element.

Claims

1. A semiconductor device including a semiconductor power element, comprising: A primary power transistor; an auxiliary power transistor connected in parallel with the primary power transistor; a driving element electrically connected to a first gate of the primary power transistor and to a second gate of the auxiliary power transistor; and a first resistive element electrically connected between the first gate and the driving element. And a second resistive element electrically connected between the second gate and the driving element, wherein the resistance value of the second resistive element is less than the resistance value of the first resistive element, and wherein the thermal carrier stress resistance of the auxiliary power transistor is greater than the thermal carrier stress resistance of the main power transistor.

2. The semiconductor device comprising a semiconductor power element as claimed in claim 1, wherein the primary power transistor is a gallium nitride semiconductor power transistor.

3. The semiconductor device including a semiconductor power element as claimed in claim 1, wherein the auxiliary power transistor is a gallium nitride semiconductor power transistor.

4. The semiconductor device including semiconductor power elements as claimed in claim 1, wherein the specific on-resistance of the primary power transistor is lower than that of the auxiliary power transistor.

5. The semiconductor device including semiconductor power elements as claimed in claim 1, wherein the gate-to-drain distance of the auxiliary power transistor is greater than the gate-to-drain distance of the primary power transistor.

6. A semiconductor device including a semiconductor power element as claimed in claim 1, wherein the element width of the auxiliary power transistor is not greater than the element width of the main power transistor, and the element width is calculated by equation (1): Element width = gate electrode width × number of gate electrodes Equation (1) Wherein, The gate electrode width represents the length of the gate electrode in the power transistor extending in the active region in a direction perpendicular to the channel direction, and the number of gate electrodes represents the number of at least one gate electrode included in the power transistor.

7. The semiconductor device including a semiconductor power element as claimed in claim 1, wherein the auxiliary power transistor is turned on earlier than the primary power transistor after the driving element provides an on signal.

8. The semiconductor device including a semiconductor power element as claimed in claim 7, wherein after the auxiliary power transistor is turned on, the output capacitor of the auxiliary power transistor discharges, causing the drain-source voltage to decrease before the main power transistor is turned on.

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