High electron mobility transistor device

Abstract

A high electron mobility transistor device includes a channel layer, a barrier layer, a gate structure, a source structure, a drain structure, a regeneration layer, and a first protective layer. The barrier layer is disposed on the channel layer. The gate structure is located on the barrier layer. The source structure includes a body portion and a first extension portion, the first extension portion being located on the body portion and extending towards the gate structure. The first extension portion has a source metal layer and a metal isolation layer, the source metal layer being disposed on the metal isolation layer, and the melting point of the metal isolation layer being higher than the melting point of the source metal layer. A gate / drain length exists between the drain structure and the gate structure. The regeneration layer extends from the drain structure towards the gate structure, and the regeneration layer has an extension length. The first protective layer is located on the barrier layer, the regeneration layer, and the gate structure, and the metal isolation layer is disposed on the first protective layer.

Claims

1. A high electron mobility transistor device, comprising: One channel layer; A barrier layer is disposed on the channel layer; A gate structure disposed on the barrier layer; a source structure disposed on the barrier layer and including a body portion and a first extension portion, the first extension portion being located on the body portion and extending toward the gate structure, wherein the first extension portion has a source metal layer and a metal isolation layer, the source metal layer being disposed on the metal isolation layer, the melting point of the metal isolation layer being higher than the melting point of the source metal layer; a drain structure disposed on the barrier layer, wherein there is a gate / drain length between the drain structure and the gate structure; a regrowth layer located on the barrier layer, and the regrowth layer extending from the drain structure toward the gate structure, wherein the regrowth layer has an extension length, wherein; A first protective layer is located on the barrier layer, the regeneration layer, and the gate structure, wherein the metal isolation layer is disposed on the first protective layer; and a first source field plate is disposed on the first protective layer, the first source field plate including a first field plate metal layer and a second field plate metal layer, the first field plate metal layer being disposed on the first protective layer, the second field plate metal layer being located on the first field plate metal layer, wherein one end of the first source field plate extends toward the source structure and above the gate structure, and the other end of the first source field plate extends toward the drain structure and does not extend above the regeneration layer.

2. The high electron mobility transistor device as claimed in claim 1, wherein the atomic density of the metal isolation layer is higher than the atomic density of the source metal layer, and the atomic density of the metal isolation layer is greater than 4 g / cm3.

3. The high electron mobility transistor device as claimed in claim 1, wherein the metal isolation layer is a TiN layer, a CrN layer, a GaN layer, a ZnO layer, a Fe2O3 layer, a MzO2 layer, or a Sm2O3 layer.

4. The high electron mobility transistor device as claimed in claim 1, wherein the gate structure includes p-type doped gallium nitride (pGaN) and a gate metal, wherein the gate metal is located on the p-type doped gallium nitride, and the metal isolation layer is made of the same material as the gate metal.

5. The high electron mobility transistor device as claimed in claim 1, wherein the regenerated layer is an AlN layer, a GaN layer, an AlGaN layer, or an nGaN (n-type doped gallium nitride) layer.

6. The high electron mobility transistor device as claimed in claim 1, wherein the first field plate metal layer is made of the same material as the metal isolation layer, and the second field plate metal layer is made of the same material as the source metal layer.

7. The high electron mobility transistor device as claimed in claim 1 further includes a first sub-protective layer, a second sub-protective layer and a second source field plate, the second sub-protective layer being located between the barrier layer and the first sub-protective layer, and the second source field plate being disposed on the first sub-protective layer.

8. The high electron mobility transistor device as claimed in claim 7, wherein the first source field plate partially covers the second source field plate, and the first source field plate and the second source field plate at least partially cover the gate structure.

9. The high electron mobility transistor device as claimed in claim 7 further includes a third protective layer and a third source field plate, the third protective layer covering the source structure, the drain structure, the first source field plate and the second source field plate, the third source field plate being disposed on the third protective layer.

10. The high electron mobility transistor device as claimed in claim 9, wherein one end of the third source field plate extends toward the drain structure and partially covers the first source field plate, the second source field plate, and the regeneration layer.

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