Substrate processing apparatus and substrate processing method

Abstract

The disclosed invention relates to a substrate processing apparatus and method, wherein the number of second measuring units disposed on the substrate to measure the substrate temperature is less than the number of first measuring units disposed below the heater to measure the heater temperature. The substrate temperature is calculated in real time during the process, and the heater temperature is controlled accordingly, thereby maintaining a uniform overall temperature of the substrate. Therefore, a thin film with uniform thickness can be deposited, thereby improving the integrity of the deposition process.

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus and a method for measuring the temperature of a substrate in real time within a cavity. [Previous Technology]

[0002] Generally, semiconductor devices, display devices, or thin-film solar cells are manufactured through thin-film deposition processes that deposit specific materials on a substrate to form thin films, lithography processes that use photosensitive materials to expose or conceal selected areas of the thin film, and etching processes that remove selected areas from the thin film and pattern them. In these processes, the thin-film deposition process and the etching process are performed using substrate processing equipment optimized for a vacuum state.

[0003] In a substrate processing apparatus optimized to a vacuum state, a heating method is used to heat the substrate, and process gases are supplied to the reaction space of the chamber for thin film deposition and etching processes. During the substrate processing process, because the temperature of the substrate affects the quality of the product, it is necessary to accurately measure the temperature of the substrate.

[0004] The temperature of the entire area of ​​the substrate or the temperature of multiple areas of the substrate is measured to calculate the temperature distribution of the substrate, thereby ensuring the uniformity of the process.

[0005] In order to measure the temperature of the entire area of ​​a substrate or the temperature of multiple areas of a substrate, multiple temperature measuring devices need to be installed at multiple locations corresponding to multiple areas to be measured. Space needs to be provided on the substrate to install these temperature measuring devices, so it is necessary to study substrate processing equipment and methods that can improve space utilization. [Summary of the Invention]

[0006] Therefore, the present invention relates to a substrate processing apparatus and method that substantially solves at least one problem caused by the defects and disadvantages of the prior art.

[0007] One object of the present invention is to provide a substrate processing apparatus and method capable of real-time measurement of the temperature of a substrate in a cavity.

[0008] Another object of the present invention is to provide a substrate processing apparatus and method that can maintain a uniform temperature of the substrate in the cavity.

[0009] Another object of the present invention is to provide a substrate processing apparatus and method that can improve the integrity of the deposition process.

[0010] Additional advantages, objects, and features of the present invention will be set forth in part in the description which follows, and in part will be apparent to those skilled in the art upon examination of the following description or may be learned by practicing the invention. The objects and other advantages of the invention may be realized and obtained by means of the structures specifically pointed out in the description, the claims herein, and the related drawings.

[0011] To achieve these and other advantages and according to the purposes of the invention, as embodied and broadly described herein, the substrate processing apparatus includes a cavity, a base for supporting a substrate within the cavity, a heater disposed below the base, at least one first measuring unit for measuring the temperature of the heater, and at least one second measuring unit for measuring the temperature of the substrate. The first measuring units and the second measuring units have different numbers from each other. The number of second measuring units may be less than the number of first measuring units.

[0012] In the substrate processing apparatus according to the present invention, the second measuring units may be separated from each other by a preset distance.

[0013] The substrate processing apparatus according to the present invention may further include a calculator for calculating the temperature of a second region of the substrate using a plurality of measurement values ​​of a first region measured by a first measurement unit and a second measurement unit and a plurality of measurement values ​​of a third region measured by the first measurement unit and the second measurement unit, the second region being located between the first region and the third region.

[0014] In the substrate processing apparatus according to the present invention, the calculator can use at least one of the difference between the measurement values ​​of the first region and the third region measured by the first measurement unit and the second measurement unit and the average value of the above measurement values ​​to calculate the temperature of the second region of the substrate.

[0015] In a substrate processing apparatus according to another embodiment of the present invention, the calculator may use the measurement value of the second region measured by the first measurement unit.

[0016] In a substrate processing apparatus according to a further embodiment of the present invention, the base may rotatably support multiple substrates simultaneously, and the second measuring unit may be disposed on each of these substrates. In this case, the controller may use the rotation speed of the substrates to control the operation of the second measuring unit.

[0017] In another embodiment, the substrate processing method includes a first step of measuring the heater temperature and the substrate temperature in a first region, a second step of measuring the heater temperature and the substrate temperature in a third region, and a third step of calculating the substrate temperature in a second region using multiple measurement values ​​from the first and third regions. The second region is located between the first and third regions.

[0018] In a further embodiment, the substrate processing method includes a first step of measuring and storing a heater temperature, a second step of measuring and storing a substrate temperature, and a third step of calculating a substrate temperature in a second region using the measured substrate temperature value and the measured heater temperature value in a first region, and the measured substrate temperature value and the measured heater temperature value in a third region. The second region is located between the first region and the third region.

[0019] In the substrate processing method according to the present invention, the substrate temperature of the second region can be calculated using at least one of the difference between the substrate temperature and the heater temperature in the first region and the third region and the average of the above temperatures.

[0020] In the substrate processing method according to the present invention, the heater temperature value measured in the second region can be further used.

[0021] It should be understood that the above general description and the following embodiments of the present invention are exemplary and illustrative, and are intended to provide further explanation of the claimed invention.

Implementation Method

[0023] The specific structural or functional descriptions of the embodiments of the present invention disclosed in this specification are provided only for explaining the embodiments of the present invention. The embodiments of the present invention may be implemented in various forms and should not be construed as being limited to the embodiments of the present invention disclosed in this specification.

[0024] Because embodiments of the present invention can be modified in various ways and have various forms, specific embodiments will be presented in the drawings and will be described in detail in this specification. However, embodiments based on the concept of the present invention are not limited to such specific embodiments, and it should be understood that the present invention includes all substitutions, equivalents and alternatives falling within the spirit and technical scope of the present invention.

[0025] It will be understood that although terms such as "first" and "second" can be used to describe various elements, the corresponding elements should not be construed as limited to these terms, which are only used to identify elements. For example, within the scope defined by this invention, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element.

[0026] It will be understood that when an element is referred to as "connected to" or "coupled to" another element, this element may be directly connected to or coupled to the other element, or there may be intermediate elements. Conversely, when an element is referred to as "directly connected to" or "directly coupled to" another element, there are no intermediate elements. Other terms describing the relationship between elements, such as "between," "directly located between," "adjacent," or "directly adjacent," should also be interpreted in the same way.

[0027] The terminology used in this specification is provided only to explain specific embodiments and is not intended to limit the invention. Unless otherwise stated, the singular form may include the plural form. It will be further understood that when terms such as "comprising" or "having" are used in this specification, they indicate the presence of the stated features, quantities, steps, operations, elements, components, or combinations thereof, but do not exclude the addition or presence of one or more other features, quantities, steps, operations, elements, components, or combinations thereof.

[0028] Unless otherwise stated, all terms used in this specification, including technical and scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. It will be further understood that terms as defined in commonly used dictionaries should be interpreted as having the same meaning as in the content of this invention and related art, and should not be interpreted as idealized or overly formal unless otherwise defined herein.

[0029] Hereinafter, the substrate processing apparatus and method according to the present invention will be described with reference to the relevant drawings. FIG1 is a diagram showing a partial structure of a cavity-based substrate processing apparatus according to an embodiment of the present invention, and FIG2 is a block diagram schematically showing the structure of the substrate processing apparatus according to the present invention.

[0030] According to an embodiment of the present invention, a substrate processing apparatus 100 may include a cavity 110 having a reaction space, a base 120 provided in the cavity 110 to support a substrate 10, a heater 130 disposed below the base 120 to heat the base 120, a gas injector 140 provided in the cavity 110 to inject process gas relative to the base 120, a gas supply unit 150 provided outside the cavity 110 to supply process gas to the gas injector 140, and an exhaust unit 160 for exhausting the cavity 110.

[0031] The cavity 110 includes a cavity body 110b and a cover 110a disposed at the top of the cavity body 110b. The cavity body 110b and the cover 110a are coupled to each other to define a reaction space within the cavity 110. The cavity 110 can be formed into a cylindrical shape with an internal space for substrate deposition. The cavity 110 can be formed into various shapes depending on the shape of the substrate 10. Here, a silicon substrate for semiconductor manufacturing or a glass substrate for flat panel display manufacturing can be used as the substrate 10. That is, when the substrate 10 is circular (such as a silicon substrate), the cavity 110 can be formed into a cylindrical shape with a circular cross-section. When the substrate 10 is quadrilateral (such as a glass substrate), the cavity 110 can be formed into a hexahedral shape with a quadrilateral cross-section.

[0032] The base 120 and the gas injector 140 may be disposed in the cavity 110 opposite to each other. For example, the base 120 may be disposed on the bottom side of the cavity 110, and the gas injector 140 may be disposed on the top side of the cavity 110. In addition, a substrate gate 111 through which the substrate 10 is introduced and removed may be provided on one side of the cavity 110. The cavity 110 may be provided with a gas inlet 151, which is connected to a gas supply unit 150 that supplies process gas to the cavity 110.

[0033] In addition, the exhaust unit 160 can be connected to the exhaust port 112 provided at the bottom of the cavity 110 to adjust the pressure in the cavity 110 or to discharge process gases and foreign objects in the cavity 110.

[0034] For example, a substrate gate 111 may be provided in one side of the cavity 110 to have sufficient size to introduce or remove the substrate 10, a gas inlet 151 may be formed through the top wall of the cavity 110, and an exhaust port 112 may be formed through the bottom wall of the cavity 110 which is lower than the base 120.

[0035] A base 120 is provided in a cavity 110, and at least one substrate 10 introduced into the cavity 110 is disposed on the base. In order for the substrate 10 to be disposed on and supported by the base 120, the base 120 may be provided, for example, with an electrostatic chuck to maintain the substrate 10 in a state where it is attracted by electrostatic force, or the substrate 10 may be supported by vacuum attraction or mechanical force. In addition, the base 120 may be formed into a planar shape (such as circular or quadrilateral) corresponding to the shape of the substrate 10, and may be manufactured to have a size larger than that of the substrate 10.

[0036] A lifter 121 for moving the base 120 upward and downward may be provided below the base 120. The lifter 121 is used to support at least one region of the base 120, such as the center. When the substrate 10 is disposed on the base 120, the lifter 121 moves the base 120 to be adjacent to the gas injector 140.

[0037] Furthermore, the heater 130 may be installed below or in the base 120. The heater 130 can heat the substrate 10 to a preset temperature so that thin film deposition, stacking and etching can be easily performed on the substrate 10. A coolant supply channel (not shown) may be provided in the base 120 to supply coolant to reduce the temperature of the substrate 10.

[0038] A gas ejector 140 is disposed on the top side of the cavity 110 and is located within the cavity 110 to eject process gas or purging gas toward the substrate 10 disposed on the base 120. Similar to the base 120, the gas ejector 140 may be formed with an external shape corresponding to the shape of the substrate 10. The gas ejector 140 may be manufactured with a generally circular or quadrilateral shape.

[0039] Meanwhile, as shown in FIG2, the substrate processing apparatus 100 according to the present invention may further include a calculator 190 and a controller 180 disposed outside the cavity 110.

[0040] As shown in FIG1, a heater 130 disposed under the substrate to heat the substrate and a first measuring unit 171 for measuring the temperature of the heater 130 may be disposed in the cavity 110. A second measuring unit 172 may be disposed on a cover 110a coupled to the top end of the cavity body 110b.

[0041] The controller 180 and the calculator 190 may be located outside the cavity 110. The controller 180 controls the first measuring unit 171 and the second measuring unit 172 to measure the temperature of the heater 130 and the temperature of the substrate 10, respectively. The controller 180 may include a memory 181 for storing the temperature data measured by the first measuring unit 171 and the second measuring unit 172. This is one embodiment, and the memory 181 may be located outside the controller 180.

[0042] The calculator 190 can use the measured temperature values ​​of the substrate 10 and the heater 130 stored in the memory 181 to calculate the temperature of the substrate 10.

[0043] Multiple second measurement units 172 may be disposed on the cover to measure the temperature of the substrate. The second measurement unit 172 may be composed of a light temperature sensor. In a representative example, a pyrometer may be used. The second measurement unit 172 may be configured to measure the temperature of the substrate.

[0044] Multiple first measuring units 171 may be disposed below the heater 130 to measure the temperature of multiple areas of the heater.

[0045] In embodiments of the present invention, the number of second measurement units 172 is different from the number of first measurement units 171. Preferably, the number of second measurement units 172 is less than the number of first measurement units 171.

[0046] FIG3 is a schematic diagram showing the area of ​​a substrate measured by a second measurement unit in a substrate processing apparatus according to the configuration in FIG1. ​​That is, it shows an embodiment applied to a process cavity using a substrate 10 disposed on a base 120. In this case, the area of ​​the substrate 10 measured by these second measurement units 172 may include the central portion (region 172b) of the substrate 10 and the opposite regions (regions 172a, 172c) of the substrate 10 symmetrically located around the central portion (region 172b). The second measurement unit 172 according to the first embodiment may be disposed on the cover 110a.

[0047] FIG4 is a diagram showing the internal structure of the cavity of a substrate processing apparatus according to another embodiment of the present invention, and FIG5 is a schematic diagram showing the area of ​​the substrate measured by the second measurement unit in the substrate processing apparatus according to the structure in FIG4.

[0048] Other embodiments of the present invention present a case where multiple substrates 10 are disposed on an upper base 120 for processing. In this case, the second measuring unit 172 can be disposed on different substrates. That is, three second measuring units 172 can be disposed on different substrates. Unlike the embodiment shown in FIG. 1, where the second measuring units are arranged in a straight line at a predetermined interval to measure the temperature of three regions of a substrate, in this embodiment, the second measuring unit 172 can measure the temperature of these substrates disposed on the base 120 through a through-hole (not shown) formed in the gas injector 140. The second measuring unit 172 can be disposed on different substrates 10 to measure the temperature of substrates located in different regions. For example, the second measuring unit 172 can measure the temperature of multiple regions 172a, 172b, and 172c. In this case, the controller 180 can control the second measuring unit 172 to operate in a manner synchronized with the rotation cycle of the substrate 10, thereby measuring the temperature of each region of the same substrate. In other words, the controller 180 can provide an operation permission signal to the second measurement unit 172, causing the second measurement unit 172 to operate when the substrate rotates and simultaneously returns to the position where the second measurement unit 172 is located. Simultaneously, the second measurement unit 172 can continuously operate to measure the temperature of the substrate 10 and the base 120 disposed beneath it. The temperature of the base 120 is higher than the temperature of the substrate 10. This is because heat is transferred to the substrate 10 when it is disposed on the base 120. The multiple measured temperature values ​​measured by the second measurement unit 172 can be divided into measured temperature values ​​of the substrate 10 and measured temperature values ​​of the base 120. Of these temperature values, only the measured temperature value of the substrate 10 can be used.

[0049] FIG6 is a schematic diagram illustrating the arrangement and operation of the first measurement unit and the second measurement unit in the substrate processing apparatus according to the present invention. Hereinafter, an embodiment in which one substrate 10 is disposed on the base 120 will be described to assist in understanding the present invention; however, its operation is similar to the operation of the case in which multiple substrates 10 are disposed on the base 120.

[0050] In this embodiment, as shown in FIG6, the first measuring unit 171 for measuring the temperature of the heater 130 includes five measuring units 171-1, 171-2, 171-3, 171-4, and 171-5 (sensors), and the second measuring unit 172 for measuring the temperature of the substrate 10 includes three measuring units 172-1, 172-2, and 172-3 (sensors). However, the present invention is not limited to the above-described configuration. That is, it can be implemented in any configuration as long as the number of temperature sensors constituting the first measuring unit and the number of temperature sensors constituting the second measuring unit are different from each other. Preferably, as shown in the configuration of this embodiment, the number of temperature sensors constituting the second measuring unit is relatively small.

[0051] A first measuring unit 171 is disposed below the heater 130 to measure the temperature of five regions A1 to A5 of the heater 130, and a second measuring unit 172 is disposed above the substrate 10 to measure the temperature of three regions A1, A3 and A5 of the substrate 10.

[0052] Measurement unit 171-1, constituting the first measurement unit 171, can measure the temperature of region A1 of heater 130; measurement unit 171-2 can measure the temperature of region A2 of heater 130; measurement unit 171-3 can measure the temperature of region A3 of heater 130; measurement unit 171-4 can measure the temperature of region A4 of heater 130; and measurement unit 171-5 can measure the temperature of region A5 of heater 130. Simultaneously, measurement unit 172-1, constituting the second measurement unit 172, located on the substrate 10, can measure the temperature of region A1 of substrate 10; measurement unit 172-2 can measure the temperature of region A3 of substrate 10; and measurement unit 172-3 can measure the temperature of region A5 of substrate 10.

[0053] FIG7 is a flowchart illustrating the steps of the substrate processing method according to the present invention. When the process is performed and the temperature in the cavity reaches a preset temperature and the cavity stabilizes, the controller 180 can control the first measuring unit 171 and the second measuring unit 172 to measure the temperature of the heater 130 and the substrate 10, respectively.

[0054] In the following description, "first region" may include "region A1 or region A3", "third region" may refer to "region A3 or region A5", and "second region" may refer to "region A2 or region A4". That is, in the "second region" located between the "first region" and the "third region", the first measuring unit 171 is disposed below the heater 130, but no second measuring unit 172 is disposed on the substrate 10. Assuming that in the schematic diagram in FIG6, "region A1" is the "first region" and "region A3" is the "third region", then the "second region" may refer to "region A2". Assuming that "region A3" is the "first region" and "region A5" is the "third region", then the "second region" may be "region A4".

[0055] In the following description, “Area A1” will be referred to as “First Area”, “Area A3” will be referred to as “Third Area”, and “Area A2” will be referred to as “Second Area”.

[0056] Under the control of the controller 180, the 1-1 measurement unit 171-1 and the 2-1 measurement unit 172-1 will measure the temperature of the first region of the heater and the temperature of the first region of the substrate respectively (step S701).

[0057] Measurement units 171-3 (1-3) and 172-2 (2-2) can respectively measure the temperature of the third region of the heater and the temperature of the third region of the substrate. The measured temperature values ​​of the heater and the substrate measured by measurement units 171-1, 171-3, 172-1, and 172-2 are stored in memory 181. Furthermore, in the above description, the temperatures of the first and third regions of the heater and the substrate are measured sequentially to aid in understanding the present invention; however, temperature measurements can be performed simultaneously (step S702).

[0058] The calculator 190 can calculate the temperature of the second region of the substrate using the values ​​stored in the memory 181. That is, by using the measured temperature values ​​of the first region of the substrate and the heater and the measured temperature values ​​of the third region of the substrate and the heater, the calculator 190 can calculate the temperature of the second region between the first region and the third region. The calculator 190 can use at least one of the difference between the measured values ​​of the first region measured by the first measurement unit and the second measurement unit and the measured values ​​of the third region measured by the first measurement unit and the second measurement unit, and the average value of the above measured values.

[0059] First, the temperature of the second region of the substrate between the first and third regions can be obtained simply by calculating the average of the temperature values ​​of the first region of the substrate measured by the 2-1 measuring unit 172-1 and the third region of the substrate measured by the 2-2 measuring unit 172-2. However, the measured temperature value of the second region of the heater is not reflected in this value, so the error range is large.

[0060] In another method, the case where the calculator 190 uses the difference (offset) between the measured values ​​of the first region and the third region will be described. In this case, the measured value of the second region of the heater measured by the first measuring unit can be further used. For example, assuming the temperatures of the first and third regions of the substrate are TA1S and TA3S, and the temperatures of the first and third regions of the heater are TA1H and TA3H, the temperature difference between the substrate and the heater in the first and third regions can be calculated as ΔA1 and ΔA3, respectively. In this case, assuming the average value of ΔA1 and ΔA3 is ΔA2, the temperature of the second region of the substrate can be calculated by subtracting ΔA2, which is the average value of ΔA1 and ΔA3, from the measured value of the second region measured by the 1-2 measuring unit 171-2.

[0061] The temperature of the substrate in region A4 where no second measurement unit is provided can be measured using the above method (step S703).

[0062] When the temperature difference between the first to third regions of the substrate is within the error range, the heaters located below these regions can be controlled to make the temperature of the substrate uniform compared to the temperature of other regions of the substrate. If the temperature difference of a specific region of the substrate is outside the error range, it can be determined that the heater or the measuring unit located below the region is abnormal, and a warning can be provided to the user.

[0063] Meanwhile, in the substrate processing method according to another embodiment of the present invention shown in FIG8, the temperature of the heater can be measured using a first measuring unit and stored in the pre-processing step of setting the substrate processing equipment before the process, and the temperature of the substrate can be measured during the process to measure the temperature of the second region of the substrate.

[0064] In the preprocessing step (i.e., the first step), the temperature of the heater is measured using the first measuring units 171-1, 171-2, 171-3, 171-4, and 171-5 and stored in the memory 181. In the initial setup step of the process equipment, the measured temperature values ​​of five regions of the heater measured by the first measuring unit composed of multiple thermocouples are pre-stored (step S801).

[0065] During the manufacturing process, the temperatures of regions A1, A3, and A5 of the substrate are measured using the second measurement unit 172 and stored in memory 181 (step S802).

[0066] The controller 180 can use the measured temperature values ​​of the heater and the third region of the substrate stored in the memory, as well as the measured temperature values ​​of the heater and the first region of the substrate, to calculate the temperature value of the second region of the substrate (step S803). At this time, the controller 180 operates in the same way as the controller described in step S703 in FIG7.

[0067] In the substrate processing apparatus and method according to the present invention, as described above, even if the second measuring unit is not located where the first measuring unit is located below the heater, the temperature of a region of the substrate can still be calculated and the temperature of the heater can be controlled based on real-time monitoring of the substrate temperature, thereby maintaining the overall temperature uniformity of the substrate. Therefore, a thin film with uniform thickness can be deposited, thereby improving the integrity of the deposition process.

[0068] Based on the above description, it is obvious that in the substrate processing apparatus and method according to the present invention, the temperature of the substrate in the cavity can be measured in real time and the temperature of the heater can be controlled using the measured temperature data of the substrate, thereby improving the temperature uniformity of the substrate and thus improving the integrity of the deposition process.

[0069] The effects achieved by the present invention are not limited to the above-mentioned effects, and those skilled in the art to which the present invention pertains can clearly understand other effects not mentioned from the above content.

[0070] Although preferred embodiments of the present invention have been described with reference to the relevant drawings, those skilled in the art will recognize that various modifications and substitutions can be made without departing from the scope and spirit of the invention as set forth in the claims. [Simplified Explanation of the Diagram]

[0022] Related drawings, included to provide a further understanding of the invention and constituting and incorporated in this application, illustrate one or more embodiments of the invention and, together with the description, explain the principles of the invention. In the drawings: FIG1 is a diagram showing a partial structure of a cavity-based substrate processing apparatus according to an embodiment of the invention. FIG2 is a block diagram schematically showing the structure of a substrate processing apparatus according to the invention. FIG3 is a schematic diagram showing a region of a substrate measured by a second measurement unit in the substrate processing apparatus according to the structure in FIG1. ​​FIG4 is a diagram showing a partial structure of a cavity-based substrate processing apparatus according to another embodiment of the invention. FIG5 is a schematic diagram showing a region of a substrate measured by a second measurement unit in the substrate processing apparatus according to the structure in FIG4. FIG6 is a schematic diagram describing the arrangement and operation of a first measurement unit and a second measurement unit in the substrate processing apparatus according to the invention. FIG7 is a flowchart showing the steps of a substrate processing method according to an embodiment of the invention. FIG8 is a flowchart showing the steps of a substrate processing method according to another embodiment of the invention.

Claims

1. A substrate processing apparatus, comprising: a cavity; a base for supporting a substrate in the cavity; a heater disposed below the base; and at least one first measuring unit for measuring the temperature of the heater; At least one second measuring unit is provided for measuring the temperature of the substrate; And a calculator for calculating the temperature of a second region of the substrate, which is located between the first region and the third region, using multiple measurement values ​​of a first region measured by the at least one first measurement unit and the at least one second measurement unit and multiple measurement values ​​of a third region measured by the at least one first measurement unit and the at least one second measurement unit; wherein the at least one first measurement unit and the at least one second measurement unit have different numbers of each other.

2. The substrate processing apparatus as claimed in claim 1, wherein the number of the at least one second measurement unit is multiple, and the second measurement units are separated from each other by a preset distance.

3. The substrate processing apparatus of claim 1, wherein the calculator uses at least one of the difference between the measurement values ​​of the first region and the third region measured by the at least one first measurement unit and the at least one second measurement unit, and the average of the measurement values ​​of the first region and the third region measured by the at least one first measurement unit and the at least one second measurement unit, to calculate the temperature of the second region of the substrate.

4. The substrate processing apparatus as claimed in claim 3, wherein the calculator further uses a measurement value of one of the second regions measured by the at least one first measurement unit to calculate the temperature of the second region of the substrate.

5. The substrate processing apparatus as described in any one of claims 1 to 4, wherein the base is rotatable and supports multiple substrates simultaneously, and the at least one second measuring unit is respectively disposed on each of the substrates.

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