Substrate processing apparatus and substrate processing method
Patent Information
- Application Number
- TW115120444
- Authority / Receiving Office
- TW · TW
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2018-04-27
- Filing Date
- 2019-03-04
- Publication Date
- 2026-10-21
- Estimated Expiration
- 2039-03-03
Smart Images

Figure TWG2TB001917644_001 
Figure TWG2TB001917644_002 
Figure TWG2TB001917644_003
Abstract
Claims
1. A substrate processing apparatus for processing a laminated substrate formed by joining a first substrate and a second substrate, comprising: a chuck for holding the laminated substrate with the first substrate on the upper side and the second substrate on the lower side, the laminated substrate comprising: a modified layer formed inside the first substrate along a boundary between a peripheral portion and a central portion in the first substrate that is to be removed, by laser light irradiating a processing surface side of the first substrate; and another modified layer formed inside the first substrate at a radially outer position than the boundary, for fragmenting the peripheral portion when removing it; and a drive unit for moving a grinding stone disposed above the chuck in a vertical direction; the substrate processing apparatus bringing the first substrate into contact with the grinding stone and removing the peripheral portion with the modified layer and the other modified layer as reference points.
2. The substrate processing apparatus of claim 1, wherein, while the first substrate is in contact with the grinding stone, the processing surface of the first substrate is ground by lowering the grinding stone, and the peripheral portion is removed by simultaneously allowing the crack to advance from the modified layer.
3. The substrate processing apparatus as described in claim 2, wherein, The drive unit is configured to rotate the grinding stone; the chuck is configured to rotate the laminated substrate. With the first substrate in contact with the grinding stone, the grinding stone is lowered while the chuck and the grinding stone rotate to grind the surface and remove the peripheral portion at the same time.
4. The substrate processing apparatus of claim 3, wherein, with the first substrate in contact with a portion of the arc of the grinding stone, the rotation direction of the grinding stone relative to the rotating first substrate is rotated from the outside to the inside of the first substrate.
5. The substrate processing apparatus of claim 3, wherein, with the first substrate in contact with a portion of the arc of the grinding stone, the rotation direction of the grinding stone relative to the rotating first substrate is rotated from the inside to the outside of the first substrate.
6. The substrate processing apparatus according to any one of claims 3 to 5 further comprises at least: a rough grinding unit for rough grinding the first substrate; and a fine grinding unit for fine grinding the first substrate; wherein, Before fine grinding, remove the periphery.
7. The substrate processing apparatus as described in any of claims 1 to 5, wherein, The modified layer is formed in such a way that the cracks extending from the modified layer do not reach the side opposite to the bonding surface of the first substrate and the second substrate in the first substrate.
8. The substrate processing apparatus as described in any one of claims 1 to 5, wherein, The modified layer is formed in such a way that a crack extending from the modified layer reaches the side opposite to the bonding surface of the first substrate and the second substrate in the first substrate.
9. The substrate processing apparatus of any one of claims 1 to 5, wherein a bonding force reduction portion is formed at the periphery of the interface between the first substrate and the second substrate.
10. A substrate processing method for processing a laminated substrate formed by joining a first substrate and a second substrate, comprising the following steps: holding the laminated substrate in a chuck with the first substrate on the upper side and the second substrate on the lower side, the laminated substrate comprising: a modified layer formed inside the first substrate along the boundary between a peripheral portion and a central portion in the first substrate that is to be removed, by irradiating a processing surface side of the first substrate with laser light; and another modified layer formed inside the first substrate at a radially outer position than the boundary, for fragmenting the peripheral portion when removing it; and bringing the first substrate into contact with a grinding stone disposed above the chuck, and removing the peripheral portion using the modified layer and the other modified layer as reference points.
11. The substrate processing method of claim 10, wherein, with the first substrate in contact with the grinding stone, the processing surface of the first substrate is ground by lowering the grinding stone, and the peripheral portion is removed at the same time.
Citation Information
Patent Citations
Method of processing wafer
JP2004111606A
Processing methods
TWI606507B
