Substrate processing apparatus and substrate processing method

TWI943854BActive Publication Date: 2026-10-21TOKYO ELECTRON LTD
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Patent Information

Application Number
TW115120444
Authority / Receiving Office
TW · TW
Patent Type
Patents
Current Assignee / Owner
Priority Date
2018-04-27
Filing Date
2019-03-04
Publication Date
2026-10-21
Estimated Expiration
2039-03-03

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    Figure TWG2TB001917644_003
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Abstract

The present invention relates to a substrate processing system for processing a substrate, characterized in that it comprises: a modified layer forming apparatus that forms a modified layer inside the substrate along the boundary between the peripheral portion and the central portion of the substrate that is to be removed; and a peripheral removal apparatus that removes the peripheral portion with the modified layer as a reference point.
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Claims

1. A substrate processing apparatus for processing a laminated substrate formed by joining a first substrate and a second substrate, comprising: a chuck for holding the laminated substrate with the first substrate on the upper side and the second substrate on the lower side, the laminated substrate comprising: a modified layer formed inside the first substrate along a boundary between a peripheral portion and a central portion in the first substrate that is to be removed, by laser light irradiating a processing surface side of the first substrate; and another modified layer formed inside the first substrate at a radially outer position than the boundary, for fragmenting the peripheral portion when removing it; and a drive unit for moving a grinding stone disposed above the chuck in a vertical direction; the substrate processing apparatus bringing the first substrate into contact with the grinding stone and removing the peripheral portion with the modified layer and the other modified layer as reference points.

2. The substrate processing apparatus of claim 1, wherein, while the first substrate is in contact with the grinding stone, the processing surface of the first substrate is ground by lowering the grinding stone, and the peripheral portion is removed by simultaneously allowing the crack to advance from the modified layer.

3. The substrate processing apparatus as described in claim 2, wherein, The drive unit is configured to rotate the grinding stone; the chuck is configured to rotate the laminated substrate. With the first substrate in contact with the grinding stone, the grinding stone is lowered while the chuck and the grinding stone rotate to grind the surface and remove the peripheral portion at the same time.

4. The substrate processing apparatus of claim 3, wherein, with the first substrate in contact with a portion of the arc of the grinding stone, the rotation direction of the grinding stone relative to the rotating first substrate is rotated from the outside to the inside of the first substrate.

5. The substrate processing apparatus of claim 3, wherein, with the first substrate in contact with a portion of the arc of the grinding stone, the rotation direction of the grinding stone relative to the rotating first substrate is rotated from the inside to the outside of the first substrate.

6. The substrate processing apparatus according to any one of claims 3 to 5 further comprises at least: a rough grinding unit for rough grinding the first substrate; and a fine grinding unit for fine grinding the first substrate; wherein, Before fine grinding, remove the periphery.

7. The substrate processing apparatus as described in any of claims 1 to 5, wherein, The modified layer is formed in such a way that the cracks extending from the modified layer do not reach the side opposite to the bonding surface of the first substrate and the second substrate in the first substrate.

8. The substrate processing apparatus as described in any one of claims 1 to 5, wherein, The modified layer is formed in such a way that a crack extending from the modified layer reaches the side opposite to the bonding surface of the first substrate and the second substrate in the first substrate.

9. The substrate processing apparatus of any one of claims 1 to 5, wherein a bonding force reduction portion is formed at the periphery of the interface between the first substrate and the second substrate.

10. A substrate processing method for processing a laminated substrate formed by joining a first substrate and a second substrate, comprising the following steps: holding the laminated substrate in a chuck with the first substrate on the upper side and the second substrate on the lower side, the laminated substrate comprising: a modified layer formed inside the first substrate along the boundary between a peripheral portion and a central portion in the first substrate that is to be removed, by irradiating a processing surface side of the first substrate with laser light; and another modified layer formed inside the first substrate at a radially outer position than the boundary, for fragmenting the peripheral portion when removing it; and bringing the first substrate into contact with a grinding stone disposed above the chuck, and removing the peripheral portion using the modified layer and the other modified layer as reference points.

11. The substrate processing method of claim 10, wherein, with the first substrate in contact with the grinding stone, the processing surface of the first substrate is ground by lowering the grinding stone, and the peripheral portion is removed at the same time.

Citation Information

Patent Citations

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    JP2004111606A

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    TWI606507B