Plasma process systems and their plasma limiting devices

Abstract

A plasma process system and its plasma confinement device are disclosed. The plasma process system includes several cavities, a carrier device carrying a substrate that moves back and forth within the cavities, and a plasma confinement device. The plasma confinement device includes a frame unit that can be fixed in one of the cavities or move together with the carrier device, a release unit installed in one of the cavities and capable of clamping or releasing the frame unit, and a drive unit for moving the release unit. Thus, the movable frame unit can actively fold into or passively detach from the carrier device, and can selectively move back and forth between the cavities together with the carrier device, thereby coordinating with different processes to achieve the effect of shielding or not shielding the substrate, and can compress the substrate to maintain flatness.

Description

Plasma process systems and their plasma limiting devices Technical Field

[0001] This invention relates to a limiting device, and more particularly to a plasma process system and its plasma limiting device. Prior Technology

[0002] A known thin film forming apparatus disclosed in Republic of China Patent Publication No. 581818 includes a chamber wall defining a buffer chamber for plasma processing, a support for carrying a substrate in and out of the buffer chamber in a front-back direction, and a mask spaced apart from the support. During film formation, material is deposited on the top surface of the substrate, the top surface of the mask, and through the gap between the support and the mask, on the side of the mask facing the substrate. This limits the area of ​​material deposition with the mask and prevents flaking material from adhering to the substrate.

[0003] However, since the mask is fixed in the buffer chamber, it cannot be used on substrates that move back and forth during deposition. Furthermore, the substrate may warp at the periphery due to heat during plasma processing, resulting in poor film quality. Summary of the Invention

[0004] Therefore, the objective of this invention is to provide a plasma process system and its plasma limiting device that can improve the quality of the coating.

[0005] Therefore, the novel plasma confinement device is capable of clamping a substrate together with a carrier device, and carrying the substrate together with the carrier device to move back and forth between several cavities that can be evacuated, the cavities being configured for surface cleaning, etching, or coating, the plasma confinement device comprising: a frame unit, a pull-out unit, and a drive unit.

[0006] The frame unit includes a cover portion surrounding an axis and defining a cutout portion. The frame unit can change between a fixed state and a movable state. In the fixed state, the frame unit is fixed to the cavity. In the movable state, the cover portion overlaps with the support device, and the frame unit can move relative to the cavity together with the support device.

[0007] The donning / removing unit includes two donning / removing members spaced apart and movably mounted in the cavity. The donning / removing members are movable relative to the cavity in a direction perpendicular to the axis between a clamping position and a releasing position. In the clamping position, the donning / removing members define a first gap and can collectively clamp the shielding portion, thereby configuring the frame unit in a fixed state. In the releasing position, the donning / removing members define a second gap greater than the first gap and can disengage from the shielding portion, thereby configuring the frame unit in a movable state.

[0008] The drive unit is installed in the cavity and connected to the donning and doffing components, and is used to move the donning and doffing components.

[0009] This novel plasma process system is suitable for plasma treatment of a substrate and includes several cavities, a carrier device, and a plasma confinement device as described above.

[0010] One of the cavities is configured for buffering, and the remaining cavities are configured for buffering, heating, degassing, surface cleaning, etching, or coating. Each of the cavities defines a chamber that can be evacuated, and any of the cavities can communicate with adjacent cavities.

[0011] The carrier device can move back and forth between the chambers in a front-to-back direction, and is suitable for carrying the substrate into and out of the corresponding chambers.

[0012] The plasma confinement device is installed in one of the cavities. When the frame unit changes to the fixed state, the frame unit is fixed in one of the cavities. When the frame unit changes to the movable state, the frame unit can move back and forth between the cavities together with the support device.

[0013] The advantages of this new type are: the movable frame unit can actively overlap or passively detach from the support device, and can selectively move back and forth between the chambers together with the support device, thereby cooperating with different processes to achieve the effect of covering or not covering the substrate, and can compress the substrate to keep it flat. Simple Explanation of the Diagram

[0014] Other features and effects of this invention will be clearly presented in the embodiments with reference to the drawings, wherein: Figure 1 is a schematic diagram illustrating the configuration of one embodiment of the novel plasma process system; Figure 2 is an incomplete cross-sectional view of this embodiment; Figure 3 is an incomplete exploded perspective view of this embodiment; Figure 4 is an incomplete cross-sectional top view of this embodiment; Figure 5 is a cross-sectional view taken along line V-V in Figure 4, illustrating that a platform in this embodiment is located at the lower limit position; Figure 6 is a cross-sectional view taken along line IV-IV in Figure 4, illustrating that the two pull-out parts of this embodiment are located in a clamping position and clamp a frame unit; Figure 7 is an incomplete cross-sectional view similar to Figure 6, but in this embodiment, the donner and undress components are in a released position; Figure 8 is an incomplete cross-sectional view similar to Figure 5, but in this embodiment, the frame unit is superimposed on a supporting device; and Figure 9 is an incomplete enlarged cross-sectional view of this embodiment. Implementation

[0015] Referring to Figures 1-4, one embodiment of the novel plasma process system is electrically connected to a power supply (not shown) and is suitable for plasma treatment of a substrate 1. In this embodiment, the plasma treatment includes buffering, heating, degassing, surface cleaning, etching, or coating.

[0016] The plasma process system includes two process chambers 2, a buffer chamber 3, a conveying device 4, a carrying device 5, a plasma confinement device 6, and a lifting device 7.

[0017] Each process chamber 2 defines a process chamber 20 that can be evacuated. Each process chamber 2 is configured for heating, degassing, surface cleaning, etching, or coating. In this embodiment, the process chambers 2 are spaced apart along a front-to-back direction X, and one process chamber 2 is used for surface cleaning, while the other process chamber 2 is used for coating or etching. It is worth noting that heating or degassing can also be performed within the same process chamber 2 as coating or etching.

[0018] The buffer chamber 3 is disposed between the process chambers 2 along a front-to-back direction X. The buffer chamber 3 is configured to buffer, defining a buffer chamber 30 that is connected to the process chambers 20 and can be evacuated. The aforementioned buffering function is to isolate the process chambers 2 from the external atmosphere, ensure that the vacuum level of the process chambers 2 is not compromised, prevent contamination, and improve equipment productivity.

[0019] The conveying device 4 includes two spaced-apart tracks 41 that pass through the process cavities 2 and the buffer cavity 3 in a forward-backward direction X, and several transmission members 42 rotatably mounted on the tracks 41. Each transmission member 42 is configured as a roller. In this embodiment, the transmission members 42 are rotated together by a wheel axle (not shown) that can be driven by a motor (not shown) and several sleeves (not shown) that connect the transmission members 42 in series.

[0020] The carrier device 5 is located above the tracks 41 and contacts the corresponding transmission member 42, and can be driven by the corresponding transmission member 42 to move back and forth between the buffer chamber 30 and the process chambers 20 along the front-back direction X. The carrier device 5 is suitable for carrying the substrate 1 into and out of the buffer chamber 30 or the corresponding process chamber 20.

[0021] The plasma confinement device 6 includes a frame unit 61, and a don / remove unit 62 and a drive unit 63 installed in the buffer cavity 3.

[0022] The frame unit 61 includes a shielding portion 611 that surrounds an axis L perpendicular to the front-rear direction X and defines a cutout portion 610. The shielding portion 611 has an outer frame surface 612 surrounding the axis L, an inner frame surface 613 surrounding the axis L and in a direction perpendicular to the axis L opposite to the outer frame surface 612, a top frame surface 614 surrounding the axis L and connected to one end of the outer frame surface 612 and one end of the inner frame surface 613, and a bottom frame surface 615 in a direction opposite to the axis L and connected to the other end of the outer frame surface 612 and the other end of the inner frame surface 613. The bottom frame surface 615 is adapted to abut against the support device 5 and the substrate 1. In this embodiment, the inner frame surface 613 is configured as a conical surface. The bottom frame surface 615 is configured as a stepped surface (as shown in FIG. 9) and is capable of engaging with the support device 5.

[0023] Referring to Figures 5-8, the frame unit 61 can change between a fixed state (as shown in Figures 5 and 6) and a movable state (as shown in Figures 7 and 8). In the fixed state, the frame unit 61 is fixed to the buffer cavity 3. In the movable state, the shielding portion 611 overlaps with the support device 5, and the frame unit 61 can move back and forth between the buffer cavity 30 and the process chambers 20 together with the support device 5. Referring to Figure 9, the shielding portion 611 of the frame unit 61 is adapted to press the substrate 1 and defines a frame-shaped shielding area 61a that is adapted to cover the substrate 1 along the direction of the axis L.

[0024] Referring to Figures 3, 4, 5, and 7, the don-and-get unit 62 includes two spaced-apart don-and-get members 621 located between the shielding portion 611 and the buffer cavity 3. These don-and-get members 621 are movable relative to the shielding portion 611 along a direction perpendicular to the axis L between a clamping position (as shown in Figures 4 and 5) and a releasing position (as shown in Figure 7). In the clamping position, the don-and-get members 621 define a first gap d1 and collectively clamp the outer frame surface 612 of the shielding portion 611, thus fixing the frame unit 61. In the releasing position, the don-and-get members 621 define a second gap d2 larger than the first gap d1 and disengage from the shielding portion 611, thus activating the frame unit 61.

[0025] The drive unit 63 includes four drive groups 631 mounted on the buffer cavity 3. Each drive group 631 has a movable member 632 that is telescopic in a direction perpendicular to the axis L and is used to move the inserting and removing members 621. In this embodiment, each drive group 631 is configured as a pressure cylinder.

[0026] Referring to Figures 1, 2, and 5, the lifting device 7 is installed in the buffer cavity 3. In this embodiment, the lifting device 7 includes a platform 71 and a lifting cylinder 72 for moving the platform 71 along a vertical direction Z. The platform 71 can move relative to the buffer cavity 3 between an upper limit position (as shown in Figure 2) and a lower limit position (as shown in Figure 5). At the upper limit position, the platform 71 abuts against the support device 5 and is adjacent to the transceivers 621. At the lower limit position, the platform 71 disengages from the support device 5 and moves away from the transceivers 621. Furthermore, during the movement from the lower limit position to the upper limit position, the platform 71 also moves the support device 5 along the vertical direction Z and disengages it from the transmission members 42. During the movement from the upper limit position to the lower limit position, the support device 5 remains on the transmission members 42.

[0027] It is worth noting that the main technical feature of this invention lies in the plasma confinement device 6. The process chambers 2, the buffer chamber 3, the supporting device 5, the conveying device 4, or the lifting device 7 are not the focus of this invention. To reduce the length of this specification and simplify the drawings so that those skilled in the art can focus on the plasma confinement device 6, the detailed structures of the process chambers 2, the buffer chamber 3, the lifting device 7, and the conveying device 4 are omitted in the drawings, and Figure 2 only shows one of the process chambers 2. The operation of the plasma process can be inferred in detail by those skilled in the art from the above description, and therefore will not be elaborated further.

[0028] Referring to Figures 1 and 2, the carrier device 5 is adapted to be driven by the transmission components 42 during plasma processing. It first enters the process chamber 20 on the left side of the figure along the front-back direction X for surface cleaning, and then sequentially enters the buffer chamber 30 and the process chamber 20 on the right side of the figure along the front-back direction X for coating. Then, it sequentially enters the buffer chamber 30 and the process chamber 20 on the left side of the figure again along the front-back direction X from the process chamber 20 on the right side of the figure. In this way, by moving back and forth several times according to process requirements, the material is deposited on the surface of the substrate 1 to achieve a predetermined thickness.

[0029] Importantly, when the carrier device 5 enters the buffer chamber 30 from the corresponding process chamber 20, it will either configure the frame unit 61 or detach from the frame unit 61 during the buffering process.

[0030] Referring to Figures 5 and 6, taking the configuration of the enclosure unit 61 as an example, under normal conditions, the donning and doffing parts 621 are located in the clamping position and together clamp the outer frame surface 612 of the cover part 611, and the enclosure unit 61 is configured in a fixed state. At this time, the platform 71 of the lifting device 7 is located at the lower limit position.

[0031] Referring to Figures 1, 2, 6, 7, and 9, when the carrier device 5 enters the buffer chamber 30 from the process chamber 20 on the left side of Figure 1, the stage 71 moves from the lower limit position to the upper limit position, and after contacting the carrier device 5, it moves the carrier device 5 together in the vertical direction Z. When the stage 71 is at the upper limit position, the moving members 632 of the drive group 631 move the insertion and removal members 621 to the release position, disengaging from the shielding part 611, causing the frame unit 61 to disengage from the insertion and removal members 621, and the shielding part 611 overlaps with the carrier device 5. At this time, the frame unit 61 is configured to be in an active state and covers the surface of the substrate 1 with its own weight, forming the shielding area 61a.

[0032] Referring to Figures 1, 2, 7, and 8, as the platform 71 moves from the upper limit position to the lower limit position, the frame unit 61 and the supporting device 5 are driven together by the platform 71 and move along the vertical direction Z towards the corresponding transmission member 42. When the supporting device 5 contacts the corresponding transmission member 42, the supporting device 5 is placed on the corresponding transmission member 42. The platform 71 then disengages from the supporting device 5 and reaches the lower limit position.

[0033] In this way, the carrier device 5 and the frame unit 61 can be driven by the transmission components 42 to enter the process chamber 20 on the right side of FIG1 along the front-back direction X and be coated, so that the material is deposited on the surface of the substrate 1 excluding the masking area 61a.

[0034] Referring to Figures 5-8, taking the detachment from the frame unit 61 as an example, when the supporting device 5 returns to the buffer chamber 30, the platform 71 will move again from the lower limit position to the upper limit position, and in the process of moving, it will drive the supporting device 5 and the frame unit 61. When the platform 71 is at the upper limit position, the moving part 632 of the drive group 631 will drive the insertion and removal parts 621 to move to the clamping position, and clamp the cover part 611 again, so that the frame unit 61 is fixed in the buffer chamber 3 and is configured in a fixed state.

[0035] Finally, as the platform 71 moves from the upper limit position to the lower limit position, the supporting device 5 detaches from the frame unit 61. When the supporting device 5 contacts the corresponding transmission member 42, the supporting device 5 is placed on the corresponding transmission member 42. The platform 71 then detaches from the supporting device 5 and reaches the lower limit position.

[0036] In this way, the carrier device 5 can be driven by the transmission components 42 to disengage from the buffer chamber 30 along the front-rear direction X and enter the process chamber 20 on the left side of FIG1 for surface cleaning. This process is repeated until the material deposited on the surface of the substrate 1 reaches the predetermined thickness.

[0037] It should be noted that the insertion / removal unit 62 and the drive unit 63 of the plasma confinement device 6 are not limited to being installed in the buffer cavity 3. In other variations of this embodiment, the buffer cavity 3 may be omitted, and the devices may be installed in any of the process cavities 2. In this way, the frame unit 61 can be actively folded or passively detached from the support device 5, and can selectively move back and forth between the process cavities 20 together with the support device 5.

[0038] Based on the above explanation, the advantages of the aforementioned embodiments can be summarized as follows:

[0039] This new type of device can actively overlap or passively detach from the support device 5 with the movable frame unit 61, and can move back and forth with the support device 5 relative to the process cavity 2 or the buffer cavity 3, thereby cooperating with different processes, inserting or detaching from the frame unit 61 to achieve the effect of covering or not covering the substrate 1, and can press the substrate 1 to keep it flat.

[0040] However, the above description is merely an embodiment of this invention and should not be construed as limiting the scope of implementation of this invention. Any simple equivalent changes and modifications made in accordance with the scope of the patent application and the contents of the patent specification shall still fall within the scope of this invention.

[0041] 1: Substrate 2: Process cavity 20: Process Chamber 3: Buffer cavity 30: Buffer Chamber 4: Conveying device 41: Track 42: Transmission components 5: Supporting device 6: Plasma confinement device 61: Enclosure Unit 610: Hollowed-out section 611: Masking section 612: Outer frame 613: Inner frame surface 614: Top frame 615: Bottom frame surface 62: Donning and doffing unit 621: Wearing and Docking Device 63: Drive Unit 631: Driver Group 632: Moving parts 7: Lifting device 71: Platform 72: Lifting Cylinder Z: Up / Down direction X: Forward / backward direction L: Axis d1: First spacing d2: Second spacing 61a: Masking area

Claims

1. A plasma confinement device suitable for clamping a substrate together with a carrier device and for carrying the substrate together with the carrier device to move back and forth between several vacuum-capable cavities, the cavities being configured for surface cleaning, etching, or coating, the plasma confinement device comprising: a frame unit including a shield portion surrounding an axis and defining a cutout portion, the frame unit being configurable between a fixed state and a movable state, wherein in the fixed state the frame unit is fixed to the cavity, and in the movable state the shield portion overlaps with the carrier device, the frame unit being movable relative to the cavity together with the carrier device; A donning / removing unit includes two donning / removing members spaced apart and movably mounted in the cavity. The donning / removing members are movable relative to the cavity in a direction perpendicular to the axis between a clamping position and a releasing position. In the clamping position, the donning / removing members define a first gap and can collectively clamp the shielding portion, thereby configuring the frame unit in a fixed state. In the releasing position, the donning / removing members define a second gap greater than the first gap and can disengage from the shielding portion, thereby configuring the frame unit in a movable state. A driving unit is mounted in the cavity and connected to the donning / removing members, and is used to drive the donning / removing members to move.

2. The plasma confinement device as claimed in claim 1, wherein, The shielding portion of the frame unit is adapted to press the substrate and defines a shielding area adapted to cover the substrate in a direction along the axis.

3. The plasma confinement device as claimed in claim 2, wherein, The shielding portion of the enclosure unit has an outer frame surface surrounding the axis and capable of being held by the inserting and removing components.

4. The plasma confinement device as claimed in claim 3, wherein, The shielding portion of the frame unit also has an inner frame surface that surrounds the axis and is opposite to the outer frame surface in a direction perpendicular to the axis, and the inner frame surface is configured as a conical surface.

5. The plasma confinement device as claimed in claim 4, wherein, The shielding portion of the frame unit also has a top frame surface that surrounds the axis and is connected to one end of the outer frame surface and one end of the inner frame surface, and a bottom frame surface that is opposite to the direction of the axis and is connected to the other end of the outer frame surface and the other end of the inner frame surface. The bottom frame surface is adapted to abut against the support device and the substrate.

6. The plasma confinement device as claimed in claim 5, wherein, The bottom frame surface is configured as a stepped surface, which is suitable for fitting the load-bearing device.

7. The plasma confinement device as claimed in claim 1, wherein, The drive unit includes several drive groups mounted in the cavity, each drive group having a movable member that can extend and retract in a direction perpendicular to the axis and is used to drive the inserting and removing parts.

8. The plasma confinement device as claimed in claim 7, wherein, Each drive unit is configured as a pressure cylinder.

9. The plasma confinement device as claimed in claim 1, wherein, When the enclosure unit is in a highly mobile state, it can move relative to the cavity along a front-back direction substantially perpendicular to the axis, along with the supporting device.

10. A plasma process system suitable for plasma processing of a substrate, comprising: a plurality of cavities, one of which is configured for buffering, and the remaining cavities are configured for buffering, heating, degassing, surface cleaning, etching, or coating, each cavity defining a vacuum chamber, any of the chambers being communicative to an adjacent chamber; a carrier capable of reciprocating between the cavities in a forward-backward direction, suitable for carrying the substrate into and out of a corresponding chamber; and a plasma confinement device as described in any one of claims 1 to 9, mounted in one of the cavities, wherein when the frame unit changes to the fixed state, the frame unit is fixed in the one of the cavities, and when the frame unit changes to the movable state, the frame unit is capable of reciprocating between the cavities together with the carrier.

11. The plasma process system of claim 10 further includes a conveying device comprising two spaced-apart tracks passing through the cavities, and at least two drive members rotatably mounted on the tracks, the carrying device being above the tracks and in contact with the corresponding drive member, and capable of being driven by the corresponding drive member.

12. The plasma process system of claim 11 further includes a lifting device comprising a platform and a drive unit for moving the platform in a vertical direction, the platform being movable relative to one of the cavities between an upper limit position and a lower limit position, wherein at the upper limit position the platform abuts against the support device and is adjacent to the transducers, and at the lower limit position the platform disengages from the support device and is away from the transducers, the platform further driving the support device to move in the vertical direction during the movement from the lower limit position to the upper limit position, and retaining the support device on the transmission members during the movement from the upper limit position to the lower limit position.

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