Workpiece processing apparatus

Abstract

This invention relates to a workpiece processing apparatus, which may include: a chamber having a receiving space; a workpiece placing device formed in the receiving space for placing at least one workpiece; a first storage tank for temporarily storing a first gas to enable the rapid and large-scale supply of the first gas to the workpiece via a first gas conduit formed in the chamber; a second storage tank for temporarily storing a second gas to enable the rapid and large-scale supply of the second gas to the workpiece via a second gas conduit formed in the chamber; and a third gas supply device for supplying the third gas to the chamber via a first valve formed in the first gas conduit, or via a second valve formed in the second gas conduit.

Description

Workpiece processing device WORKPIECE PROCESSING APPARATUS Technical Field

[0001] This invention relates to workpiece processing technology, and more specifically, to workpiece processing apparatus capable of depositing or heat-treating thin films. Prior Technology

[0002] A technique commonly used in the manufacture of semiconductors or display components involves thin-film deposition or heat treatment of the workpiece using a workpiece processing apparatus. For example, the reactor materials such as spray heads or electrodes within the workpiece processing apparatus are made of metal or alloy materials. To enhance plasma resistance and corrosion resistance, highly corrosion-resistant substances can be coated or deposited on their surfaces using methods such as anodizing, spraying, or CVD (chemical vapor deposition).

[0003] However, due to the characteristics of the process, it is difficult to precisely control the thickness of this existing coating method, which leads to a decrease in the uniformity of coating on the entire surface of the auxiliary material and the disadvantage of insufficient film density. As a result, impedance differences are generated when plasma is generated between multiple chambers. This not only changes the plasma characteristics, but also reduces corrosion resistance, leading to particle generation, and causes contamination problems, resulting in an increase in the defect rate of components.

[0004] A new auxiliary coating technology has been proposed to address these issues, utilizing the existing coating method, atomic layer deposition (ALD). However, while products produced using this ALD method offer technological advantages, they suffer from low production efficiency due to low deposition rates, excessive production time and costs. Summary of the Invention

[0005] Technical issues

[0006] This invention addresses numerous problems, including those described above, and aims to provide a workpiece handling apparatus that maximizes production efficiency by optimizing workpiece processing efficiency. However, this technical problem is merely exemplary, and the scope of this invention is not limited thereto.

[0007] Problem-solving methods

[0008] To solve the above-mentioned technical problems, the workpiece processing device according to the present invention may include: a chamber having a receiving space; a workpiece placing device formed in the receiving space for placing at least one workpiece; a first storage tank for temporarily storing a first gas to enable the rapid and large-scale supply of the first gas to the workpiece through a first gas pipe formed in the chamber; a second storage tank for temporarily storing a second gas to enable the rapid and large-scale supply of the second gas to the workpiece through a second gas pipe formed in the chamber; and a third gas supply device for supplying the third gas to the chamber by connecting to a first valve formed in the first gas pipe, or by connecting to a second valve formed in the second gas pipe.

[0009] Furthermore, according to this invention, the first storage tank can be formed into a long cylindrical shape in the vertical direction to achieve connection with a plurality of the first gas pipelines in the lateral direction, and one end is connected to the first gas filling pipeline; the second storage tank can be formed into a long cylindrical shape in the vertical direction to achieve connection with a plurality of the second gas pipelines in the lateral direction, and one end is connected to the second gas filling pipeline.

[0010] Furthermore, according to this invention, a first pressure detection device for detecting the pressure of the first gas may be formed at the other end of the first storage tank, so as to realize the filling of the first gas at a certain pressure level inside; and a second pressure detection device for detecting the pressure of the second gas may be formed at the other end of the second storage tank, so as to realize the filling of the second gas at a certain pressure level inside.

[0011] Furthermore, according to this invention, the third gas supply device includes: a third-first gas supply pipeline, which supplies the third gas to the first gas pipeline via a plurality of three-way valves, i.e., the first valve; and a third-second gas supply pipeline, which supplies the third gas to the second gas pipeline via a plurality of three-way valves, i.e., the second valve.

[0012] Furthermore, according to this invention, the workpiece may be a reactor auxiliary material for a semiconductor or display manufacturing apparatus.

[0013] Furthermore, according to this invention, the workpiece placement device may include: a sidewall-type cover plate formed in a shape that seals the lateral opening of the chamber; and a fork arm formed protrudingly on the inner surface of the sidewall-type cover plate to support a detachable cassette carrying a plurality of the workpieces.

[0014] Furthermore, according to this invention, a rotating device may be further included, which is vertically and rotatably formed in the chamber and has an engagement protrusion for engaging with the detachable cartridge to rotate the detachable cartridge.

[0015] Furthermore, according to this invention, the chamber may include: a chamber body; a heating element formed in the chamber body; a spray head formed on one side wall of the chamber body, connected to the first gas pipe and the second gas pipe, and having a plurality of exhaust ports; and an exhaust baffle formed on the other side wall of the chamber body, and having a plurality of exhaust ports.

[0016] Furthermore, according to this invention, the first gas can be a source gas or a purge gas, the second gas can be a reactant gas or a purge gas, and the third gas can be a purge gas.

[0017] In addition, to solve the above-mentioned technical problems, the workpiece processing method of the present invention may include the following steps: (a) filling a first storage tank with a first gas to temporarily store the first gas in the first storage tank, or filling a second storage tank with a second gas to temporarily store the second gas in the second storage tank; (b) rapidly supplying the first gas in large quantities to the workpiece placed inside the chamber using the filled first storage tank; (c) supplying the third gas to the chamber using a third gas supply device; (d) rapidly supplying the second gas in large quantities to the workpiece placed inside the chamber using the filled second storage tank; and (e) supplying the third gas to the chamber using the third gas supply device.

[0018] The effect of creation

[0019] According to some embodiments of the present invention as described above, for workpieces such as spray heads or electrodes in semiconductor or display component manufacturing apparatus, the coating uniformity of the entire surface can be improved, enabling the coating film to form densely. By utilizing a buffer fill tank that temporarily stores the source gas or reaction gas before supplying it in large quantities to the chamber, deposition efficiency and process efficiency are optimized, thereby maximizing production efficiency. Of course, the scope of the present invention is not limited to the above-described effects. Simple Explanation of the Diagram

[0020] Figure 1 is a conceptual cross-sectional view of a workpiece processing apparatus according to a partial embodiment of this invention.

[0021] Figure 2 is an oblique view of the workpiece processing device shown in Figure 1 in its open state.

[0022] Figures 3 to 7 are cross-sectional views illustrating the operation process of the workpiece processing device in Figure 1, step by step.

[0023] Figure 8 is a flowchart of a workpiece processing method according to a partial embodiment of this invention. Implementation

[0024] The preferred embodiments of this invention will now be described in detail with reference to the accompanying drawings.

[0025] The embodiments of this invention are provided to enable those skilled in the art to more clearly understand this invention. The following embodiments can be modified in various ways, and the scope of this invention is not limited to the following embodiments. Rather, these embodiments make this disclosure more complete and are provided to fully convey the technical ideas of this invention to those skilled in the art. Furthermore, for ease of explanation and clarity, the thickness or dimensions of each layer in the drawings will be exaggerated.

[0026] Throughout this specification, when a component, such as a membrane, region, or workpiece, is described as being placed "on top of" another component in a manner of "connection," "layering," or "coupling," it is understood that the component is in direct contact with the other component in a manner of "connection," "layering," or "coupling," or that other components are sandwiched between them. Conversely, when a component is described as being placed "on top of" another component in a manner of "direct connection" or "direct coupling," it is understood that no other components are sandwiched between them. Identical symbols indicate identical components. The term "and / or," as used in this specification, includes any one or more of the listed items.

[0027] The embodiments of the present invention will now be described with reference to schematic diagrams of preferred embodiments. In the accompanying drawings, for example, deformation of the illustrated shapes is expected depending on the manufacturing techniques and / or tolerances used. Therefore, embodiments based on the inventive concept should not be construed as limited to specific shapes within the illustrated areas of this specification, but should include, for example, shape variations caused during the manufacturing process.

[0028] Figure 1 is a conceptual cross-sectional view of a workpiece processing apparatus 100 according to a partial embodiment of the present invention, and Figure 2 is a perspective view of the workpiece processing apparatus 100 of Figure 1 in an open state.

[0029] As shown in Figures 1 and 2, the workpiece processing apparatus 100 according to a partial embodiment of the present invention may generally include: a chamber 10, a workpiece placement device 20, a first storage tank T1, a second storage tank T2, a third gas supply device 30, and a control unit 50.

[0030] The workpiece processing apparatus 100 may be a thin film deposition apparatus for depositing or coating a thin film on the workpiece 1, or a heat treatment apparatus capable of heat treating the workpiece 1, or an apparatus capable of both forming a thin film and performing heat treatment. For example, thin film deposition may be performed using chemical vapor deposition (CVD) or atomic layer deposition (ALD) methods.

[0031] As shown in Figures 1 and 2, the chamber 10 can be, for example, a sealable box-shaped structure that forms a receiving space capable of accommodating the workpiece 1. Inside, there can be a workpiece holding device 20 capable of holding the workpiece 1. It is welded or assembled from an upper panel, side wall panels, bottom panel, etc., and can be an assembly structure composed of various components.

[0032] As shown in Figures 1 and 2, more specifically, the chamber 10 may include, for example: a chamber body 11 having an internal accommodating space; a heating element 12 formed on the inner wall surface of the chamber body 11 for heating the workpiece 1; a spray head 13 formed on one side wall of the chamber body 11 and connected to the first gas pipe L1 and the second gas pipe L2, and having a plurality of outlets 13a; an exhaust baffle 14 formed on the other side wall of the chamber body 11 and having a plurality of outlets 14a; and an exhaust pipe 15 for conveying the gas discharged through the exhaust baffle 14 to the outside.

[0033] Therefore, the spray head 13 can be used to uniformly supply gas into the chamber 10, and the exhaust baffle 14 can be used to uniformly discharge the gas inside the chamber 10.

[0034] However, the chamber 10 is not limited to those shown in the figures, and can be any chamber with sufficient strength and durability to support the workpiece 1, the workpiece support device 20, the first storage tank T1, the second storage tank T2 and the third gas supply device 30.

[0035] As shown in Figures 1 and 2, the workpiece placement device 20 can be, for example, a frame structure formed in the accommodating space and capable of placing at least one workpiece 1.

[0036] Among them, the workpiece 1 can be a spray head, or a semiconductor such as an electrode auxiliary material, or a reactor auxiliary material of a display manufacturing device, and the workpiece support device 20 that can support them can be a various frame structure that can stack and support multiple workpieces 1.

[0037] As shown in Figures 1 and 2, more specifically, the workpiece holding device 20 may include, for example, a sidewall cover 21 and a fork arm 22. The sidewall cover 21 is formed in the shape of a lateral opening 10a of a sealed chamber 10, and the fork arm 22 is formed protrudingly on the inner surface of the sidewall cover 21 to support a separable cassette 2 carrying a plurality of workpieces 1.

[0038] As described above, the workpiece processing apparatus 100 according to a partial embodiment of the present invention may further include a rotating device 40, which is formed in the chamber 10 in a lifting and rotating manner, and has a connecting protrusion 41 for engaging with the separable cartridge 2, so as to rotate the separable cartridge 2.

[0039] Therefore, firstly, as shown in Figure 2, after placing the separable cartridge 2 carrying a plurality of workpieces 1 on the fork arm 22, the side wall cover 21 is tightly attached to the lateral opening 10a of the chamber 10 to seal the chamber 10. Then, as shown in Figure 1, the rotating device 40 rises along the direction of the separable cartridge 2, so that the engaging protrusion 41 of the rotating device 40 engages with the separable cartridge 2. When the rotating device 40 lifts the separable cartridge 2 from the fork arm 22 and rotates it, the workpieces 1 can be processed uniformly.

[0040] However, the workpiece 1 or the workpiece placement device 20 is not limited to this; in addition, various materials or their placement devices may be used.

[0041] As shown in Figures 1 and 2, the first storage tank T1 can be a storage container structure used to temporarily store the first gas in order to rapidly supply the first gas to the workpiece 1 in large quantities through the first gas pipeline L1 formed in the chamber 10.

[0042] More specifically, the first storage tank T1 may be formed into a long cylindrical shape in the vertical direction to achieve lateral connection with a plurality of the first gas pipes L1, and one end of it may be connected to the first gas filling pipe C1.

[0043] For example, a first pressure detection device S1 for detecting the pressure of the first gas can be formed at the other end of the first storage tank T1, so as to realize the filling of the first gas at a certain pressure inside.

[0044] Therefore, based on the structure of the first storage tank T1, the first gas can be temporarily stored in the first storage tank T1 with a certain capacity and pressure using the first gas filling pipe C1, and the temporarily stored first gas can be supplied to the interior of the chamber 10 in a large quantity and uniformly at one time using multiple first gas pipes L1.

[0045] As shown in Figures 1 and 2, the second storage tank T2 can be a storage container structure used to temporarily store the second gas in order to rapidly supply the second gas to the workpiece 1 in large quantities through the second gas pipeline L2 formed in the chamber 10.

[0046] More specifically, the second storage tank T2 may be formed into a long cylindrical shape along the vertical direction to achieve lateral connection with a plurality of the second gas pipes L2, and one end of it may be connected to the second gas filling pipe C2.

[0047] For example, a second pressure detection device S2 for detecting the pressure of the second gas can be formed at the other end of the second storage tank T2, so as to realize the filling of the second gas at a certain pressure.

[0048] Therefore, according to the second storage tank T2, the second gas can be temporarily stored in the second storage tank T2 with a certain capacity and pressure using the second gas filling pipe C2, and the second gas temporarily stored using multiple second gas pipes L2 can be supplied to the interior of the chamber 10 in a large quantity at once and uniformly.

[0049] As shown in Figures 1 and 2, the third gas supply device 30 can be, for example, a gas supply device that supplies the third gas to the chamber 10 by connecting to the first valve V1 formed in the first gas pipeline L1, or by connecting to the second valve V2 formed in the second gas pipeline L2.

[0050] More specifically, the third gas supply device 30 may include, for example, a third-first gas supply pipe L3-1 and a third-second gas supply pipe L3-2. The third-first gas supply pipe L3-1 supplies the third gas to the first gas pipe L1 through a plurality of three-way valves, i.e., first valves V1, and the third-second gas supply pipe L3-2 supplies the third gas to the second gas pipe L2 through a plurality of three-way valves, i.e., second valves V2.

[0051] In order to form an atomic layer deposition coating on workpiece 1, the first gas can be a source gas or a purge gas, the second gas can be a reactant gas or a purge gas, and the third gas can be a purge gas.

[0052] As shown in Figure 1, the control unit 50 may be, for example, a control device for applying control signals to the first valve V1 and the second valve V2 to automatically execute the following series of processes: filling the first storage tank T1 with a first gas to temporarily store the first gas in the first storage tank T1, or filling the second storage tank T2 with a second gas to temporarily store the second gas in the second storage tank T2; rapidly and in large quantities supplying the first gas to the workpiece 1 placed inside the chamber 10 using the filled first storage tank T1; supplying the third gas to the chamber 10 using the third gas supply device 30; rapidly and in large quantities supplying the second gas to the workpiece 1 placed inside the chamber 10 using the filled second storage tank T2; and supplying the third gas to the chamber 10 using the third gas supply device 30.

[0053] Figures 3 to 7 are cross-sectional views illustrating the operation process of the workpiece processing device 100 in Figure 1 step by step.

[0054] As shown in Figures 3 to 7, the operation process of the workpiece processing device 100 according to a partial embodiment of the present invention is described in the following steps: First, as shown in Figure 3, the first gas is filled into the first storage tank T1 through the first gas filling pipe C1, so as to temporarily store the first gas in the first storage tank T1.

[0055] At this time, in order to shorten the process time, the second gas can also be filled into the second storage tank T2 through the second gas filling pipe C2 to achieve temporary storage of the second gas in the second storage tank T2.

[0056] Next, as shown in Figure 4, the first valve V1 is opened, and the first gas (source gas) can be quickly and in large quantities supplied to the workpiece 1 placed inside the chamber 10 using the first filled storage tank T1.

[0057] Next, as shown in Figure 5, the third gas (purge gas) can be supplied to the chamber 10 via the third-1 gas supply pipe L3-1 of the third gas supply device 30. At this time, the third gas can be continuously supplied to the chamber 10.

[0058] Next, as shown in Figure 6, the second valve V2 is opened, and the second storage tank T2 is filled, which can quickly and in large quantities supply the second gas to the workpiece 1 placed inside the chamber 10.

[0059] Next, as shown in Figure 7, the third gas can be supplied to the chamber 10 via the third-second gas supply pipe L3-2 of the third gas supply device 30. At this time, the third gas can be continuously supplied to the chamber 10.

[0060] For example, the workpiece processing apparatus 100 can be used in atomic layer deposition (ALD) to deposit or coat a thin film at the atomic layer level on the surface of the workpiece 1 by sequentially supplying a source gas, a purge gas, a reactant gas and a purge gas to the workpiece 1.

[0061] Figure 8 is a flowchart of a workpiece processing method according to a partial embodiment of this invention.

[0062] As shown in Figures 1 to 8, a workpiece processing method according to a partial embodiment of the present invention includes the following steps: (a) filling a first storage tank T1 with a first gas to temporarily store the first gas in the first storage tank T1, or filling a second storage tank T2 with a second gas to temporarily store the second gas in the second storage tank T2; (b) rapidly supplying a large quantity of the first gas to the workpiece 1 placed inside the chamber 10 using the filled first storage tank T1; (c) supplying a third gas to the chamber 10 using a third gas supply device 30; (d) rapidly supplying a large quantity of the second gas to the workpiece 1 placed inside the chamber 10 using the filled second storage tank T2; and (e) supplying the third gas to the chamber 10 using the third gas supply device 30. For example, this workpiece processing method may include an atomic layer deposition method.

[0063] According to some embodiments of this invention, for workpieces 1 such as spray heads or electrodes in a semiconductor or display component manufacturing apparatus, the uniformity of the entire surface treatment can be improved. In the case of thin film deposition, the density of the thin film can be improved. By using a buffer fill tank that temporarily stores the source gas or reaction gas and then supplies it in large quantities to the chamber 10, the processing efficiency can be optimized, thereby maximizing production efficiency. For example, in the case of thin film deposition, the deposition efficiency can be improved, thus increasing production efficiency.

[0064] This invention has been described with reference to the embodiments shown in the accompanying drawings; however, these are merely exemplary, and those skilled in the art should understand that various modifications and equivalent embodiments can be made based on them. Therefore, the true scope of protection of this invention should be determined based on the technical concept of the claims.

[0065] 1: Workpiece 2: Separable cartridge 10: Chamber 10a: Lateral opening 11: Main body of the chamber 12: Heating section 13: Sprayer head 13a: Discharge outlet 14: Exhaust baffle 14a: Discharge outlet 15: Exhaust pipe 20: Workpiece placement device 21: Sidewall type cover plate 22: Fork Arm 30: Third gas supply device 40: Rotating device 41: Combined with protrusions 50: Control Unit 100: Workpiece processing device C1: First gas filling pipeline C2: Second gas filling pipeline L1: Gas Pipeline 1 L2: Second gas pipeline L3-1: Gas supply pipeline No. 3-1 L3-2: Gas supply pipeline No. 3-2 S1: First pressure detection device S2: Second pressure detection device T1: Storage Tank 1 T2: Second Storage Tank V1: Valve 1 V2: Second valve

Claims

1. A workpiece processing apparatus, comprising: A chamber, which forms a space for containment; A workpiece holding device formed in the receiving space and used to hold at least one workpiece; a first storage tank for temporarily storing a first gas to enable the rapid and large-scale supply of the first gas to the workpiece via a first gas conduit formed in the chamber; a second storage tank for temporarily storing a second gas to enable the rapid and large-scale supply of the second gas to the workpiece via a second gas conduit formed in the chamber; and a third gas supply device for supplying the third gas to the chamber via a first valve formed in the first gas conduit, or via a second valve formed in the second gas conduit.

2. The workpiece processing apparatus as described in claim 1, wherein, The first storage tank is formed into a long cylindrical shape along the vertical direction to achieve lateral connection with a plurality of the first gas pipelines, and one end is connected to the first gas filling pipeline. The second storage tank is formed into a long cylindrical shape along the vertical direction to achieve lateral connection with a plurality of the second gas pipelines, and one end is connected to the second gas filling pipeline.

3. The workpiece processing apparatus as described in claim 1, wherein, The other end of the first storage tank is provided with a first pressure detection device for detecting the pressure of the first gas, so as to realize the filling of the first gas at a certain pressure. The other end of the second storage tank is provided with a second pressure detection device for detecting the pressure of the second gas, so as to realize the filling of the second gas at a certain pressure.

4. The workpiece processing apparatus as described in claim 1, wherein, The third gas supply device includes: a third-first gas supply pipeline, which supplies the third gas to the first gas pipeline via a plurality of three-way valves, i.e., the first valve; and a third-second gas supply pipeline, which supplies the third gas to the second gas pipeline via a plurality of three-way valves, i.e., the second valve.

5. The workpiece processing apparatus as described in claim 1, wherein, The workpiece is a reactor auxiliary material for a semiconductor or display manufacturing apparatus.

6. The workpiece processing apparatus as described in claim 1, wherein, The workpiece holding device includes: a sidewall-type cover plate formed in the shape of sealing the lateral opening of the chamber; and a fork arm formed protrudingly on the inner surface of the sidewall-type cover plate to support a detachable cassette carrying a plurality of the workpieces.

7. The workpiece handling apparatus as described in claim 6, wherein, It further includes a rotating device formed in the chamber that is vertically and rotatably oriented, and has engagement protrusions for engaging with the detachable cartridge to rotate the detachable cartridge.

8. The workpiece processing apparatus as described in claim 1, wherein, The chamber includes: a chamber body; a heating element formed in the chamber body; a spray head formed in one side wall of the chamber body, connected to the first gas pipe and the second gas pipe, and having a plurality of outlets; and an exhaust baffle formed in the other side wall of the chamber body, and having a plurality of outlets.

9. The workpiece processing apparatus as described in claim 1, wherein, The first gas is a source gas or a purge gas, the second gas is a reactant gas or a purge gas, and the third gas is a purge gas.

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