A voltage clamping circuit and a high-voltage DC power supply system

TWM686961UActive Publication Date: 2026-09-01VERTIV CORP
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Patent Information

Application Number
TW115202622
Authority / Receiving Office
TW · TW
Patent Type
Utility models
Current Assignee / Owner
Priority Date
2025-05-27
Filing Date
2026-03-25
Publication Date
2026-09-01
Estimated Expiration
2036-03-24

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Abstract

This invention discloses a voltage clamping circuit and a high-voltage DC power supply system for stabilizing the neutral voltage of a high-voltage DC system and preventing large-scale fluctuations in the positive and negative voltages to ground. The voltage clamping circuit includes: a transistor whose first terminal is connected to the first terminal of a second resistor and the second terminal of a three-terminal semiconductor device; the second terminal of the transistor is connected to the second terminal of the second resistor; the intermediate node between the second terminal of the transistor and the second terminal of the second resistor serves as the first terminal of the circuit; a transistor whose third terminal is connected to the first terminal of the first resistor and the first terminal of the three-terminal semiconductor device; the second terminal of the first resistor and the third terminal of the three-terminal semiconductor device serve as the second terminal of the circuit; and a voltage regulator connected between the second terminal of the transistor and the intermediate node, and / or connected between the third terminal of the transistor and a target node, where the target node is the connection point between the third terminal of the transistor, the first terminal of the first resistor, and the first terminal of the three-terminal semiconductor device.
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Claims

1. A voltage clamping circuit, comprising: The circuit comprises a transistor, a three-terminal semiconductor device, a first resistor, a second resistor, and at least one voltage regulator, wherein a first terminal of the transistor is connected to a first terminal of the second resistor and a second terminal of the three-terminal semiconductor device, and a second terminal of the transistor is connected to a second terminal of the second resistor; an intermediate node between the second terminal of the transistor and the second terminal of the second resistor serves as a first terminal of the circuit; a third terminal of the transistor is connected to a first terminal of the first resistor and a first terminal of the three-terminal semiconductor device, and a second terminal of the first resistor is connected to a third terminal of the three-terminal semiconductor device, serving as a second terminal of the circuit; and a voltage regulator is connected between the second terminal of the transistor and the intermediate node, and / or between the third terminal of the transistor and a target node, wherein the target node is the connection node between the third terminal of the transistor, the first terminal of the first resistor, and the first terminal of the three-terminal semiconductor device.

2. The voltage clamping circuit as claimed in claim 1, wherein the voltage regulator comprises a plurality of Zener diodes connected in series.

3. The voltage clamping circuit as claimed in claim 1, wherein the transistor is a bipolar transistor, the first terminal of the bipolar transistor being the base, the second terminal being the collector, and the third terminal being the emitter.

4. The voltage clamping circuit as claimed in claim 1, wherein the transistor is a metal-oxide-semiconductor field-effect transistor (MOSFET), wherein the first terminal of the MOSFET is the gate, the second terminal is the drain, and the third terminal is the source.

5. The voltage clamping circuit as claimed in claim 1, wherein the three-terminal semiconductor device is a transistor, wherein the first terminal of the transistor is the base, the second terminal is the collector, and the third terminal is the emitter.

6. The voltage clamping circuit as claimed in claim 1, wherein the three-terminal semiconductor device is a MOSFET, wherein the first terminal of the MOSFET is the gate, the second terminal is the drain, and the third terminal is the source.

7. The voltage clamping circuit as claimed in claim 1, wherein the three-terminal semiconductor device is a three-terminal adjustable parallel regulator, wherein the first terminal of the three-terminal adjustable parallel regulator is a reference terminal, the second terminal is a cathode, and the third terminal is an anode.

8. A high-voltage direct current power supply system, comprising: A high-voltage direct current system and at least one voltage clamping circuit as claimed in any one of claims 1 to 7, wherein a first terminal of the voltage clamping circuit is connected to the neutral line of the high-voltage direct current system and a second terminal is connected to the ground line; or the first terminal of the voltage clamping circuit is connected to the ground line and the second terminal is connected to the neutral line of the high-voltage direct current system.

9. The high-voltage direct current power supply system as claimed in claim 8, wherein the at least one voltage clamping circuit includes a first voltage clamping circuit, and the high-voltage direct current power supply system further includes: A first diode is connected between the first terminal of the first voltage clamping circuit and the neutral line of the high voltage DC system, and the anode of the first diode is connected to the neutral line of the high voltage DC system.

10. The high-voltage direct current power supply system as claimed in claim 8, wherein the at least one voltage clamping circuit includes a second voltage clamping circuit, and the high-voltage direct current power supply system further includes: The second diode is connected between the first terminal of the second voltage clamping circuit and the ground wire, and the anode of the second diode is connected to the ground wire.