A silicon carbide crystal growth device with a rotating structure

Abstract

A silicon carbide crystal growth apparatus with a rotating structure includes an outer crucible, a groove structure of which defines a crystal growth space, a seed crystal layer attached to a surface of the outer crucible facing the crystal growth space, a rotating mechanism partially disposed in the crystal growth space, and an inner crucible positioned in the crystal growth space and placed on the rotating mechanism, rotating together with the rotating mechanism. The outer crucible remains stationary, and a heating element is arranged around the outer periphery of the outer crucible, providing a temperature to the crystal growth space. When the crystal growth apparatus performs a crystal growth process, only the inner crucible rotates through the rotating mechanism, so that the thermal field provided by the heating element remains uniform in the crystal growth space, thereby improving crystal quality.

Claims

1. A silicon carbide crystal growth apparatus with a rotating structure, comprising: an outer crucible, which is a tank structure, wherein the space enclosed by the tank structure of the outer crucible defines a crystal growth space; an outer crucible cover, which detachably closes the opening of the tank structure of the outer crucible; and a seed crystal layer is adhered to one surface of the outer crucible, wherein... The surface is positioned facing the crystal growth space; a rotating mechanism, at least a portion of which is disposed in the crystal growth space; an inner crucible, located in the crystal growth space and placed on the rotating mechanism, and rotating together with the rotating mechanism, wherein the outer crucible remains stationary; and a heating element, arranged around the outer periphery of the outer crucible, the heating element providing a temperature to the crystal growth space.

2. The silicon carbide crystal growth apparatus as described in claim 1, wherein the rotating mechanism comprises: a drive motor disposed outside the outer crucible; a rotating shaft, one end of which is vertically connected to the drive motor, the rotating shaft penetrating the bottom of the outer crucible and extending into the crystal growth space; and a rotating part comprising: a fixing member disposed in an outer crucible hole of the outer crucible, wherein, The rotating shaft passes through the fixing member, and the fixing member and the rotating shaft cooperate with each other through a bearing structure or a sliding fit structure. A rotating member is connected to the other end of the rotating shaft opposite the drive motor, located in the crystal growth space.

3. The silicon carbide crystal growth apparatus as described in claim 2, wherein the rotating member and the rotating shaft rotate synchronously by means of a keyed, snap-fit, or integrally formed connection.

4. The silicon carbide crystal growth apparatus as described in any one of claims 1 to 3, wherein the heating element is a resistance heater.

5. The silicon carbide crystal growth apparatus as described in claim 4, wherein the rotational speed of the inner crucible is between 0.2 and 0.5 rpm.

6. The silicon carbide crystal growth apparatus as described in claim 5, wherein the outer crucible hole is located at the other end of the outer crucible opposite the opening of the tank structure, wherein, The outer crucible hole secures at least a portion of the rotating mechanism.

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