Composite packaged heat dissipation structure

Abstract

This invention discloses a composite packaged heat dissipation structure disposed above a semiconductor device, which corresponds to a heat source region and a non-heat source region. The structure includes: a vapor chamber, an aluminum silicon carbide composite material structural component, and a bonding layer. The vapor chamber diffuses heat from the semiconductor device along a planar direction; the aluminum silicon carbide composite material structural component is bonded to the vapor chamber to provide structural support and reduce deformation caused by thermal expansion; and the bonding layer is disposed between the vapor chamber and the aluminum silicon carbide composite material structural component. The vapor chamber is configured to correspond to the heat source region, while the aluminum silicon carbide composite material structural component is configured to correspond to the non-heat source region, forming a functional partitioned structure with a heat diffusion region and a structural support region.

Claims

1. A composite packaged heat dissipation structure, disposed above a semiconductor element, the semiconductor element correspondingly generating a heat source region and a non-heat source region, comprising: A temperature equalization chamber is used to diffuse heat from the semiconductor device along the planar direction; An aluminum silicon carbide composite material structural component is incorporated into the temperature-equalizing cavity to provide structural support and reduce deformation caused by thermal expansion; and a bonding layer is disposed between the temperature-equalizing cavity and the aluminum silicon carbide composite material structural component; wherein the temperature-equalizing cavity is configured corresponding to the heat source region, and the aluminum silicon carbide composite material structural component is configured corresponding to the non-heat source region, to form a functional partition structure with a heat diffusion region and a structural support region.

2. The composite encapsulation heat dissipation structure as described in claim 1, wherein the aluminum silicon carbide composite material structural component has an opening area, and the heat exchange cavity system is embedded in the opening area.

3. The composite encapsulation heat dissipation structure as described in claim 1, wherein the heat exchange cavity system is sandwiched between two upper and lower aluminum silicon carbide composite material structural components to form a stacked structure.

4. The composite package heat dissipation structure as described in claim 1, wherein the bonding layer includes a metal plating layer and a solder layer.

5. The composite package heat dissipation structure as described in claim 4, wherein the metal plating layer comprises a single layer or a composite layer of Ni, Ni-P, Ag or Cr.

6. The composite package heat dissipation structure as described in claim 4, wherein the solder layer comprises an InSn or AuSn alloy.

7. The composite encapsulation heat dissipation structure as described in claim 1, wherein the coefficient of thermal expansion of the aluminum silicon carbide composite material structure is between 6 ppm / ℃ and 12 ppm / ℃.

8. The composite packaged heat dissipation structure as described in claim 1, wherein the thickness of the heat exchange cavity is between 0.8 mm and 2.0 mm, and the cavity contains capillary structures and working fluid.

9. The composite package heat dissipation structure as described in claim 1, wherein the aluminum silicon carbide composite material structure has a local thickening structure at its edges or corners to reduce package warpage.

10. The composite package heat dissipation structure as described in claim 1 is applied to a package lid, ring, heat spreader, stiffener, or heat sink base.

Images