Crystal growth device with current guide ring

TWM687782UActive Publication Date: 2026-09-21JING CHENG MATERIAL CO LTD
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
TW115204478
Authority / Receiving Office
TW · TW
Patent Type
Utility models
Current Assignee / Owner
Filing Date
2026-05-19
Publication Date
2026-09-21
Estimated Expiration
2036-05-18

Smart Images

  • Figure TWG2TB001912796_001
    Figure TWG2TB001912796_001
  • Figure TWG2TB001912796_002
    Figure TWG2TB001912796_002
  • Figure TWG2TB001912796_003
    Figure TWG2TB001912796_003
Patent Text Reader

Abstract

A crystal growth apparatus with a flow-guiding ring includes a crucible comprising a crucible cover, a flow-guiding ring, a graphite heat insulation element, and an insulating layer. The crucible cover is used to close one end of the crucible, and its inner surface includes a crystal growth portion. The flow-guiding ring is disposed on the crucible cover protruding into the crucible. The graphite heat insulation element is arranged around the flow-guiding ring and covers the inner surface of the flow-guiding ring through the insulating layer to prevent graphite particles from precipitating out upon heating and contaminating the crystal.
Need to check novelty before this filing date? Find Prior Art

Claims

1. A crystal growth apparatus with a flow guide ring, comprising: a crucible, which is a hollow tank defining a crystal growth space inside, the crucible including: a bottom, which is a closed end of one end of the crucible; a crucible cover, which is detachably disposed at the other end of the crucible opposite to the bottom to close the crystal growth space, the side of the crucible cover facing the crystal growth space including a crystal growth portion; a flow guide ring disposed on the side of the crucible cover facing the crystal growth space, the axis of which is aligned with the axis of the crucible; and an insulating layer covering the surface of the flow guide ring facing the crystal growth space.

2. The crystal growth device with a current-conducting ring as described in claim 1, wherein the insulating layer is a tantalum carbide.

3. The crystal growth apparatus with a current guide ring as described in claim 2, wherein a seed crystal is disposed on one side of the crystal growth section facing the crystal growth space.

4. The crystal growth apparatus with a flow guide ring as described in claim 3, wherein a raw material is disposed in the crystal growth space relative to the bottom.

5. The crystal growth apparatus with a flow guide ring as described in claim 4, wherein the raw material comprises any one or any combination of silicon carbide powder, carbon powder, and silicon powder.