Silicon carbide crystal growth device with adjustable temperature distribution

Abstract

A silicon carbide crystal growth apparatus for regulating temperature distribution includes a crucible. The crucible includes a top cover and a heating element. The top cover contains a crystal growth portion facing the crucible interior. At least one heat-insulating layer is disposed on an outer end face of the top cover and is at least partially aligned with the crystal growth portion. The heating element is arranged around the outside of the crucible for heating it. The heat-insulating layer helps maintain the heating temperature inside the crucible, avoiding uneven temperature distribution caused by heat conduction and improving the situation where the temperature is too low at the axial center due to its distance from the heating element.

Claims

1. A silicon carbide crystal growth apparatus with adjustable temperature distribution, comprising: a crucible, which is a hollow tank defining a crystal growth space inside, the crucible comprising: a crucible cover disposed at an open end of the crucible to close the crystal growth space, the crucible cover having at least one heat insulation layer on an outer end face relative to the one closing the crystal growth space; and a crystal growth portion disposed within the crystal growth space near the crucible cover, wherein: at least a portion of the heat insulation layer is aligned with the crystal growth portion.

2. The silicon carbide crystal growth apparatus with adjustable temperature distribution as described in claim 1, wherein the insulation layer is coaxially arranged with the crucible and the crystal growth section.

3. The silicon carbide crystal growth apparatus with adjustable temperature distribution as described in claim 2, wherein the insulation layer is a soft graphite felt or a hard graphite felt.

4. The silicon carbide crystal growth apparatus with adjustable temperature distribution as described in any one of claims 1 to 3, wherein a raw material is disposed in the crystal growth space of the crucible, the raw material comprising any one or any combination of silicon carbide powder, carbon powder, and silicon powder.

5. The silicon carbide crystal growth apparatus with adjustable temperature distribution as described in claim 4, wherein a seed crystal is disposed on the crystal growth section facing the crystal growth space, and the raw material will crystallize on the seed crystal after sublimation.

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