System for reclaiming semiconductor wafer

Abstract

A semiconductor wafer regeneration system includes a control device, a pulsed laser device, and a carrier driving device. The control device is connected to both the pulsed laser device and the carrier driving device. The carrier driving device is used to carry a semiconductor wafer to be regenerated, wherein the semiconductor wafer to be regenerated includes a semiconductor wafer and a structural layer formed on one of the upper surfaces of the semiconductor wafer, and the semiconductor wafer is made of a semiconductor material. The control device controls the pulsed laser device and the carrier drive device to generate a plurality of laser pulses. By driving the carrier drive device, at least one of a relative displacement and a relative rotation is generated between the plurality of laser pulses generated by the pulsed laser device and the semiconductor wafer to be regenerated. The pulsed laser device performs a laser processing on the upper surface of one of the semiconductor wafers to be regenerated to remove the structural layer and the desired thickness of one of the semiconductor wafers adjacent to the upper surface of the semiconductor wafer. The desired thickness is greater than or equal to 0.01 micrometers. There is an overlap rate between any two adjacent laser pulses. The desired thickness is proportional to the overlap rate.

Claims

1. A semiconductor wafer regeneration system, comprising: A control device; A pulsed laser device is connected to the control device; The system also includes a carrier drive device connected to the control device. The carrier drive device carries a semiconductor wafer to be regenerated, wherein the semiconductor wafer includes a semiconductor wafer and a structural layer formed on one of the upper surfaces of the semiconductor wafer. The semiconductor wafer is made of a semiconductor material. The control device controls the pulsed laser device and the carrier drive device, causing the pulsed laser device to generate a plurality of laser pulses, and drives the carrier drive device to drive the plurality of laser pulses generated by the pulsed laser device. The pulsed laser device generates at least one of a relative displacement and a relative rotation between the pulsed laser and the semiconductor wafer to be regenerated, and performs a laser processing on the semiconductor wafer to be regenerated from one of the upper surfaces of the semiconductor wafer to remove the structural layer and the thickness of the semiconductor wafer to be removed adjacent to the upper surface of the semiconductor wafer, wherein any one of the plurality of laser pulses is focused on a focusing plane, wherein any two adjacent of the plurality of laser pulses have an overlap rate, and the thickness to be removed is proportional to the overlap rate.

2. The semiconductor wafer regeneration system as claimed in claim 1, wherein the irradiance distribution of a spot on the focusing plane of any of the plurality of laser pulses is a Gaussian distribution or a flat-top distribution.

3. The semiconductor wafer regeneration system as described in claim 1, wherein the laser processing is a non-galvanometer scanning laser processing.

4. The semiconductor wafer regeneration system as claimed in claim 1, wherein the pulsed laser device has a pulse repetition frequency, wherein, based on a processing position on the upper surface of the semiconductor wafer to be regenerated by the laser processing, the pulse repetition frequency is controlled to vary with the processing position to control a rate of change of the overlap rate to be greater than or equal to 0 and less than or equal to 10%.

5. The semiconductor wafer regeneration system as claimed in claim 1, wherein the laser processing system performs the laser processing on the semiconductor wafer to be regenerated along a processing path, the processing path being a spiral path, wherein the spiral path is radially outward from the center of one of the semiconductor wafers to be regenerated, radially inward from any point on the circumference of one of the semiconductor wafers to be regenerated, or radially outward or radially inward from any point between the center of the semiconductor wafer and the circumference of the semiconductor wafer to be regenerated.

6. A semiconductor wafer regeneration system, comprising: A control device; A pulsed laser device is connected to the control device; A carrier drive device, connected to the control device, is used to carry a semiconductor wafer to be regenerated. The semiconductor wafer to be regenerated includes a semiconductor wafer and a structural layer formed on one of the upper surfaces of the semiconductor wafer. The semiconductor wafer is made of a semiconductor material. The control device controls the pulsed laser device and the carrier drive device, causing the pulsed laser device to generate a plurality of laser pulses, and by driving the carrier drive device, causing the plurality of laser pulses generated by the pulsed laser device to interact with... At least one of relative displacement and relative rotation is generated between the semiconductor wafers to be regenerated, and the pulsed laser device performs a laser processing on the semiconductor wafer to be regenerated from the upper surface of one of the semiconductor wafers to remove the structural layer and the thickness of the semiconductor wafer to be removed from the upper surface of the semiconductor wafer adjacent to the semiconductor wafer. Any one of the plurality of laser pulses is focused on a focusing plane, and the irradiance distribution of a spot of any one of the plurality of laser pulses on the focusing plane is a Gaussian distribution or a flat-top distribution.

7. The semiconductor wafer regeneration system as described in claim 6, wherein the laser processing is a non-galvanometer scanning laser processing.

8. The semiconductor wafer regeneration system as claimed in claim 6, wherein any two adjacent laser pulses of the plurality of laser pulses have an overlap rate, wherein the pulse laser device has a pulse repetition frequency, wherein, based on a processing position on the upper surface of the semiconductor wafer to be regenerated by laser processing, the rate of change of the overlap rate is controlled to be greater than or equal to 0 and less than or equal to 10% by controlling the pulse repetition frequency to vary with the processing position.

9. The semiconductor wafer regeneration system as claimed in claim 6, wherein the laser processing system performs the laser processing on the semiconductor wafer to be regenerated along a processing path, the processing path being a spiral path, wherein the spiral path is radially outward from the center of one of the semiconductor wafers to be regenerated, radially inward from any point on the circumference of one of the semiconductor wafers to be regenerated, or radially outward or radially inward from any point between the center of the semiconductor wafer and the circumference of the semiconductor wafer to be regenerated.

10. A semiconductor wafer regeneration system, comprising: A control device; A pulsed laser device is connected to the control device; The device includes a carrier drive unit connected to the control unit. The carrier drive unit is used to carry a semiconductor wafer to be regenerated, wherein the semiconductor wafer to be regenerated includes a semiconductor wafer and a structural layer formed on one of the upper surfaces of the semiconductor wafer. The semiconductor wafer is made of a semiconductor material. The control unit controls the pulsed laser device and the carrier drive unit respectively, so that the pulsed laser device generates a plurality of laser pulses. By driving the carrier drive unit, at least one of a relative displacement and a relative rotation is generated between the plurality of laser pulses generated by the pulsed laser device and the semiconductor wafer to be regenerated. The pulsed laser device performs a laser processing on the semiconductor wafer to be regenerated from one of the upper surfaces of the semiconductor wafer to remove the structural layer and the thickness of one of the upper surfaces of the semiconductor wafer to be removed. Each of the plurality of laser pulses is focused on a focusing plane. The laser processing is a non-galvanometer scanning laser processing.

11. The semiconductor wafer regeneration system of claim 10, wherein any two adjacent laser pulses of the plurality of laser pulses have an overlap rate, wherein the pulse laser device has a pulse repetition frequency, wherein, based on a processing position on the upper surface of the semiconductor wafer to be regenerated by laser processing, the rate of change of the overlap rate is controlled to be greater than or equal to 0 and less than or equal to 10% by controlling the pulse repetition frequency to vary with the processing position.

12. The semiconductor wafer regeneration system as claimed in claim 10, wherein the laser processing system performs the laser processing on the semiconductor wafer to be regenerated along a processing path, the processing path being a spiral path, wherein the spiral path is radially outward from the center of one of the semiconductor wafers to be regenerated, radially inward from any point on the circumference of one of the semiconductor wafers to be regenerated, or radially outward or radially inward from any point between the center of the semiconductor wafer and the circumference of the semiconductor wafer to be regenerated.

13. A semiconductor wafer regeneration system, comprising: A control device; A pulsed laser device is connected to the control device; The system includes a carrier drive device connected to the control device. The carrier drive device carries a semiconductor wafer to be regenerated, wherein the semiconductor wafer includes a semiconductor wafer and a structural layer formed on one upper surface of the semiconductor wafer. The semiconductor wafer is made of a semiconductor material. The control device controls the pulsed laser device and the carrier drive device, causing the pulsed laser device to generate a plurality of laser pulses. By driving the carrier drive device, at least one of a relative displacement and a relative rotation is generated between the plurality of laser pulses generated by the pulsed laser device and the semiconductor wafer to be regenerated. The device performs a laser process on one of the semiconductor wafers to be regenerated from its upper surface to remove the structural layer and the thickness of the semiconductor wafer to be removed from the upper surface of the semiconductor wafer. Any one of the plurality of laser pulses is focused on a focusing plane. There is an overlap rate between any two adjacent laser pulses. The pulsed laser device has a pulse repetition frequency. Based on the processing position of the laser processing on one of the upper surfaces of the semiconductor wafer to be regenerated, the pulse repetition frequency is controlled to vary with the processing position to control the rate of change of the overlap rate to be greater than or equal to 0 and less than or equal to 10%.

14. The semiconductor wafer regeneration system as claimed in claim 13, wherein the laser processing system performs the laser processing on the semiconductor wafer to be regenerated along a processing path, the processing path being a spiral path, wherein the spiral path is radially outward from the center of one of the semiconductor wafers to be regenerated, radially inward from any point on the circumference of one of the semiconductor wafers to be regenerated, or radially outward or radially inward from any point between the center of the semiconductor wafer and the circumference of the semiconductor wafer to be regenerated.

15. A semiconductor wafer regeneration system, comprising: A control device; A pulsed laser device is connected to the control device; A carrier drive device, connected to the control device, is used to carry a semiconductor wafer to be regenerated. The semiconductor wafer to be regenerated includes a semiconductor wafer and a structural layer formed on one of the upper surfaces of the semiconductor wafer. The semiconductor wafer is made of a semiconductor material. The control device controls the pulsed laser device and the carrier drive device, causing the pulsed laser device to generate a plurality of laser pulses. By driving the carrier drive device, at least one of a relative displacement and a relative rotation is generated between the plurality of laser pulses generated by the pulsed laser device and the semiconductor wafer to be regenerated. The control device also drives the pulsed laser device to move away from the semiconductor wafer to be regenerated. A laser process is performed on the upper surface of the semiconductor wafer to be regenerated to remove the structural layer and the thickness of the semiconductor wafer to be removed adjacent to the upper surface of the semiconductor wafer. Any one of the plurality of laser pulses is focused on a focusing plane. The laser process is performed on the semiconductor wafer to be regenerated along a processing path. The processing path is a spiral path. The spiral path is radially outward from the center of one of the semiconductor wafers to be regenerated, radially inward from any point on the circumference of one of the semiconductor wafers to be regenerated, or radially outward or radially inward from any point between the center of the semiconductor wafer and the circumference of the semiconductor wafer to be regenerated.

16. A semiconductor wafer regeneration system as described in any one of claims 1 to 4, 6 to 8, 10, 11, and 13, wherein the laser processing system performs the laser processing on the semiconductor wafer to be regenerated along a processing path, the processing path including at least one of a spiral path, a figure-eight path, and a ring path.

17. The semiconductor wafer regeneration system as claimed in claim 16, wherein the spiral path is a radially outward spiral from the center of one of the semiconductor wafers to be regenerated, a radially inward spiral from any point on the circumference of one of the semiconductor wafers to be regenerated, or a radially outward or radially inward spiral from any point between the center of the semiconductor wafer and the circumference of the semiconductor wafer to be regenerated.

18. A semiconductor wafer regeneration system as described in any one of claims 1 to 15, wherein each of the plurality of laser pulses has a desired energy density greater than 0.1 joules / cm².

19. A semiconductor wafer regeneration system as described in any one of claims 1 to 15, wherein each of the plurality of laser pulses has a pulse width less than 1 microsecond.

20. The semiconductor wafer regeneration system as claimed in any one of claims 1 to 15, wherein the pulsed laser device has a pulse repetition frequency greater than or equal to 100 Hz and less than or equal to 1 MHz.

21. The semiconductor wafer regeneration system as described in any one of claims 1 to 15, wherein the semiconductor material is silicon, silicon carbide, diamond, indium phosphide, gallium arsenide, gallium oxide, aluminum oxide, gallium nitride, germanium, zinc selenide, cadmium telluride, mercury cadmium telluride, sapphire, gallium phosphide, indium arsenide, or gallium antimonide.

22. The semiconductor wafer regeneration system as described in any one of claims 1 to 15, wherein the focusing plane is adjacent to one of the upper surfaces of the structural layer, adjacent to the upper surface of the semiconductor wafer, or located between the upper surface of the structural layer and the upper surface of the semiconductor wafer.

23. The semiconductor wafer regeneration system as claimed in claim 22, wherein the diameter of a spot on the focusing plane of any of the plurality of laser pulses is greater than or equal to 20 micrometers and less than or equal to 2000 micrometers.

24. The semiconductor wafer regeneration system as described in any one of claims 1 to 15, further comprising a polishing apparatus, wherein the semiconductor wafer forms a laser-processed surface after the laser processing, wherein the polishing apparatus is used to perform a polishing process on the laser-processed surface of the semiconductor wafer to obtain a regenerated semiconductor wafer.

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