Pixel structure

Abstract

A pixel structure is provided, including a substrate, a source electrode and a drain electrode, an interface modifier layer, an organic semiconductor layer, a first insulating layer, a gate electrode, a second insulating layer, and a pixel electrode. The interface modifier layer is located on the source electrode and the drain electrode. The organic semiconductor layer is located on the interface modifier layer. The first insulating layer covers the organic semiconductor layer, the source electrode, and the drain electrode. The gate electrode is located on the first insulating layer at a position corresponding to the organic semiconductor layer. The second insulating layer covers the gate electrode. A communicating contact hole is formed between the first insulating layer and the second insulating layer. The pixel electrode is located on the second insulating layer and is electrically connected to the drain electrode through the contact hole.

Claims

1. A pixel structure, comprising: One substrate; A first metal layer is disposed on the substrate, the first metal layer including a source electrode and a drain electrode, the source electrode and the drain electrode being spaced apart; an interface modification layer including two interface modification portions, respectively disposed above the source electrode and the drain electrode; an organic semiconductor layer is disposed above the interface modification layer, spanning and covering the interface modification portion corresponding to the source electrode, and covering another interface modification portion corresponding to the drain electrode; a first insulating layer covering the organic semiconductor layer, the first metal layer, and the interface modification layer; and a gate electrode is disposed on the first insulating layer, the position of the gate electrode corresponding to the position of the organic semiconductor layer, wherein the projection of the gate electrode toward the substrate defines a first projection amount, the projection of the organic semiconductor layer toward the substrate defines a second projection amount, the first projection amount and the second projection amount overlap, and the first projection amount is greater than the second projection amount; A second insulating layer covers the gate electrode and is located on the first insulating layer, wherein a contact hole is formed between the first insulating layer and the second insulating layer corresponding to the drain electrode; and a pixel electrode is disposed on the second insulating layer and electrically connected to the drain electrode through the contact hole.

2. The pixel structure as described in claim 1, wherein, The two interface modification layers directly contact the source electrode and the drain electrode, respectively. The interface modification layer has an opening at the position corresponding to the contact hole, and the pixel electrode directly contacts the drain electrode through the opening.

3. The pixel structure as described in claim 1, further comprising: A second metal layer includes two conductive portions disposed on the source electrode and the drain electrode, respectively, and two interface-modified portions are disposed on the two conductive portions; wherein, the first insulating layer includes a first insulating portion and a second insulating portion, the first insulating portion covering the source electrode and the drain electrode, the second insulating portion being located between the second insulating layer and the first insulating portion, and covering the organic semiconductor layer; wherein, the first insulating portion has a plurality of through holes, so that the two conductive portions respectively make electrical contact with the source electrode and the drain electrode through the plurality of through holes; wherein, the pixel electrode directly contacts the drain electrode through the contact holes.

4. The pixel structure as described in claim 1, wherein, The contact hole is disposed at one end of the drain electrode, and a third projection of the contact hole toward the substrate does not overlap with the second projection of the organic semiconductor layer toward the substrate.

5. The pixel structure as described in claim 1, wherein, The interface modification layer is a molybdenum dioxide layer or a molybdenum trioxide layer.

6. The pixel structure as described in claim 1 further includes a buffer layer disposed between the first metal layer and the substrate.

7. The pixel structure as described in claim 1, wherein, The first metal layer is an aluminum layer, a chromium layer, a copper layer, or an alloy layer of at least two of the group consisting of aluminum, chromium, and copper.

8. The pixel structure as described in claim 1, wherein, The organic semiconductor layer is a P-type organic semiconductor layer.

9. The pixel structure as described in claim 1, wherein, The thickness of the interface modification layer is between 20 nanometers and 60 nanometers.

10. The pixel structure as described in claim 1, wherein, The thickness of the first metal layer is between 200 nanometers and 600 nanometers.

11. The pixel structure as described in claim 1 further includes a common electrode located at the same level as the gate electrode.

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