Multilayer metastructure lens device with height-difference phase control

TWM688339UActive Publication Date: 2026-10-11黄胜荣 +3
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Patent Information

Application Number
TW114209878
Authority / Receiving Office
TW · TW
Patent Type
Utility models
Current Assignee / Owner
Filing Date
2025-09-16
Publication Date
2026-10-11
Estimated Expiration
2035-09-15

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Abstract

This invention provides a multilayer metalens device with height difference phase modulation, comprising a base and a metalens layer disposed on the base. The metalens layer is composed of multiple metaatomic units forming an array structure, each metaatomic unit having a different height to generate a phase difference with the incident wave, thereby forming a predetermined wavefront distribution. In one embodiment, the geometric parameters of each metaatomic unit include one of height, width, cross-sectional shape, or spacing. Multiple metalens layers can form a multilayer stacked structure to increase the degree of freedom in wavefront modulation. The base and the metalens layer can be formed by three-dimensional printing or semiconductor processing. Compared to traditional lens structures, this invention has the advantages of planarization, miniaturization, high design freedom, and excellent manufacturing flexibility, and is suitable for phase modulation, focusing, or beamforming of electromagnetic waves, sound waves, or matter waves.
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Claims

1. A multilayer metalens device with height difference phase modulation, comprising: A base; And a metalens layer disposed on the base, wherein the metalens layer is composed of a plurality of meta-atom units forming an array structure, characterized in that each meta-atom unit has a different height to generate a phase difference with the incident wave, thereby forming a predetermined wavefront distribution.

2. The multilayer metalens device with height difference phase modulation as described in claim 1, wherein the geometric parameters of each metaatomic unit include one or a combination of height, width, cross-sectional shape or arrangement spacing.

3. The multilayer metalens device with height difference phase modulation as described in claim 1, wherein the base and the metalens layer are formed by three-dimensional printing or semiconductor processing.

4. The multilayer metalens device with height difference phase modulation as described in claim 1, wherein the material of each metaatomic unit includes, but is not limited to, various metals, alloys, resins and other three-dimensional printing materials.

5. The multilayer metalens device with height difference phase modulation as described in claim 1, wherein the size of each metaatomic unit is not limited to being smaller than the corresponding operating wavelength, and its size can be designed to be on the nanometer to millimeter scale.

6. The multilayer metalens device with height difference phase modulation as described in claim 1, wherein the incident wave is an electromagnetic wave, an acoustic wave, or a matter wave.

7. The multilayer metalens device with height difference phase modulation as described in claim 1, wherein the metalens layer is a single layer or a stacked structure of two or more layers.

8. The multilayer metalens device with height difference phase modulation as described in claim 1, wherein the cross-sectional shape of each metaatomic unit is one of square, rectangular, circular, elliptical, triangular, polygonal or hollow.

9. A multilayer metalens device with height difference phase modulation as described in claim 6 or 7, wherein the cross-sectional shape or height of different metaatomic units may be different from each other.

10. The multilayer metalens device with height difference phase modulation as described in claim 1, wherein the diameter or single-side length of the metalens layer is tens of micrometers or more.

11. The multilayer metalens device with height difference phase control as described in claim 1, wherein the multilayer metalens device is configured to focus incident waves of different wavelengths onto the same designed focal length position.

12. The multilayer metalens device with height difference phase modulation as described in claim 11, wherein the multilayer metalens device is configured to focus an incident wave within a predetermined frequency band and suppress wave transmission outside the predetermined frequency band.

13. The multilayer metalens device with height difference phase modulation as described in claim 1, wherein the multilayer metalens device is configured to cause incident waves of different wavelengths to form focal points at different positions on the imaging plane.

14. A multilayer metalens device with height difference phase control as described in claim 11 or 12, wherein the multilayer metalens device is configured to form a non-point focal pattern or multiple focal distributions on the imaging plane.