Switching device

Abstract

A switching device includes first and second paths, first and second shunt paths, and first and second variable resistors. The first path is located between a common transmission terminal and a first transmission terminal. The second path is located between the common transmission terminal and a second transmission terminal. The first shunt path is located between a first node and a reference voltage terminal. The second shunt path is located between a second node and a reference voltage terminal. The first and second variable resistors are respectively located on the first and second shunt paths. In a first operating mode, the first path is on, the second path is off, the first variable resistor provides a first low resistance value, and the second variable resistor provides a second high resistance value.

Claims

1. A switching device, comprising: A first path is located between a common transmission end and a first transmission end, the first path including a first node; A second path, located between the common transmission terminal and the second transmission terminal, the second path including a second node; a first shunt path, located between the first node and a reference voltage terminal; a second shunt path, located between the second node and the reference voltage terminal; a first variable resistor, located on the first shunt path; And a second variable resistor located on the second shunt path. In a first operating mode, the first path is on and the second path is off, and the first variable resistor provides a first low resistance value. In a second operating mode, the first path is off and the second path is on, and the first variable resistor provides a first high resistance value, wherein the first high resistance value of the first variable resistor is greater than the first low resistance value. In the first operating mode, the second variable resistor provides a second high resistance value. In the second operating mode, the second variable resistor provides a second low resistance value, wherein the second high resistance value of the second variable resistor is greater than the second low resistance value.

2. The switching device as claimed in claim 1, wherein in the first operating mode, the first diversion path is closed and the second diversion path is open, and in the second operating mode, the first diversion path is open and the second diversion path is closed.

3. The switching device as described in claim 1, further comprising: A first switching element is located on the first path; A second switching element is located on the second path; A first shunt switching element is located on the first shunt path; and a second shunt switching element is located on the second shunt path.

4. The switching device as claimed in claim 3, wherein the first switching element includes a first transistor, a first terminal of the first transistor is coupled to the common transmission terminal, a second terminal of the first transistor is coupled to the first transmission terminal, and a control terminal of the first transistor is used to receive a first switching signal; and the second switching element includes a second transistor, a first terminal of the second transistor is coupled to the common transmission terminal, a second terminal of the second transistor is coupled to the second transmission terminal, and a control terminal of the second transistor is used to receive a second switching signal.

5. The switching device as described in claim 1, further comprising: A first bonding wire is located on the first path and is disposed between the first node and the first transmission end; And a second bonding wire, located on the second path and disposed between the second node and the second transmission end.

6. The switching device as described in claim 1, further comprising: A first shunt bonding wire is located on the first shunt path and is disposed between the first variable resistor and a first reference voltage terminal; And a second shunt bonding wire, located on the second shunt path, and disposed between the second variable resistor and the first reference voltage terminal.

7. The switching device as claimed in claim 1, wherein at least one of the first variable resistor and the second variable resistor comprises: First resistor unit; And a second resistor unit, which is connected in series with the first resistor unit.

8. The switching device as claimed in claim 7, wherein the first resistor unit comprises: First resistor; The second resistor unit includes a second resistor and a first control switch connected in parallel with the first resistor. And a second control switch connected in parallel with the second resistor.

9. The switching device as claimed in claim 1, wherein at least one of the first variable resistor and the second variable resistor comprises: First resistor unit; And a second resistor unit, which is connected in parallel with the first resistor unit.

10. The switching device as claimed in claim 9, wherein the first resistor unit comprises: First resistor; The second resistor unit includes a second resistor and a first control switch connected in series with the first resistor. And a second control switch connected in series with the second resistor.

11. The switching device as claimed in claim 1, wherein at least one of the first variable resistor and the second variable resistor comprises: A third transistor includes a first terminal, a second terminal, and a control terminal, wherein the first terminal is coupled to the first node or the second node, the second terminal is coupled to the reference voltage terminal, and the conduction state of the third transistor changes according to a voltage signal, so that the third transistor provides different on-resistances.

12. The switching device as described in claim 11, further comprising: A digital-to-analog converter is coupled to the control terminal of the third transistor, and the digital-to-analog converter generates the voltage signal based on at least one digital signal.

13. The switching device as claimed in claim 1, wherein the first high resistance value of the first variable resistor is 17 to 20 times the first low resistance value, or the second high resistance value of the second variable resistor is 17 to 20 times the second low resistance value.

14. The switching device as described in claim 1, further comprising: A third path is located between the common transmission end and a third transmission end, and the third path includes a third node; A third shunt path is located between the third node and the reference voltage terminal; and a third variable resistor is located on the third shunt path.

15. The switching device as claimed in claim 14, wherein, In the first or second operating mode, the third path is cut off, and the third variable resistor provides a third high resistance value. In a third operating mode, the first and second paths are cut off, the third path is turned on, and the third variable resistor provides a third low resistance value, wherein the third high resistance value of the third path is greater than the third low resistance value.

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