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Isolation structure with nitrogen-containing liner and methods of manufacture

a technology of isolation structure and nitrogen-containing liners, which is applied in the direction of basic electric elements, semiconductor devices, electrical equipment, etc., can solve the problems of weak regions in the active regions where defects or even cracks may be formed, and the use of oxide liners, however, typically involves a high thermal budg

Inactive Publication Date: 2005-10-13
KO CHIH HSIN +3
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This approach reduces compressive stress, prevents sidewall oxidation, and minimizes defects by using a nitrogen-containing liner with high tensile stress and rounded corners, enhancing the stability of semiconductor devices.

Problems solved by technology

In addition, due to the intrinsic stress in the nitride liner, defects or even cracks may be formed at weak regions in the active regions, such as at sharp corners.
The use of an oxide liner, however, typically involves a high thermal budget.

Method used

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  • Isolation structure with nitrogen-containing liner and methods of manufacture
  • Isolation structure with nitrogen-containing liner and methods of manufacture
  • Isolation structure with nitrogen-containing liner and methods of manufacture

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Embodiment Construction

[0020] The making and using of the presently preferred embodiments are discussed in detail below. It should be appreciated, however, that the present invention provides many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the invention, and do not limit the scope of the invention.

[0021]FIGS. 2a-2m illustrate cross-section views of a wafer during various steps of a first method embodiment of the present invention. The process begins in FIG. 2a, wherein a wafer 200 having a substrate 210 has been prepared by applying a hard mask 212 thereto. The substrate 210 may be silicon or glass, but preferably silicon.

[0022] The hard mask 212 preferably comprises an oxide layer 214 and a nitride layer 216. Preferably the oxide layer 214 comprises a silicon dioxide layer formed by thermal oxidation or by chemical vapor deposition (CVD) techniques using is tetra-e...

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PUM

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Abstract

A semiconductor isolation trench includes a substrate and a trench formed therein. The trench is lined with a nitrogen-containing liner and filled with a dielectric material. The nitrogen-containing liner preferably contacts the active region of a device, such as a transistor, located adjacent to the trench.

Description

[0001] This application is a divisional of patent application Ser. No. 10 / 687,377, entitled “Isolation Structure with Nitrogen-Containing Liner and Methods of Manufacture,” filed on Oct. 16, 2003, which claims the benefit of U.S. Provisional Application No. 60 / 495,316, entitled “Isolation Structure with Nitrogen-Containing Liner and Methods of Manufacture,” filed on Aug. 15, 2003, which applications are hereby incorporated herein by reference. CROSS-REFERENCE TO RELATED APPLICATIONS [0002] This application relates to the following patents and co-pending, commonly-assigned patent applications. Each of these documents is incorporated herein by reference. U.S. Pat. or Ser. No.Filing DateIssue Date6,882,025Apr. 25, 2003Apr. 19, 20056,020,621Jan. 28, 1998Feb. 1, 2000TECHNICAL FIELD [0003] The present invention relates to the field of semiconductor devices, and more specifically, to the formation of improved isolation structures with nitrogen-containing liners. BACKGROUND [0004] Shallow ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/28H01L21/306H01L21/76H01L21/762H01L21/8234H01L29/78
CPCH01L21/28123H01L21/76232H01L21/823481H01L29/7833
Inventor KO, CHIH-HSINYEO, YEE-CHIAKE, CHUNG-HULEE, WEN-CHIN
Owner KO CHIH HSIN