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Method for improving thickness uniformity of deposited ozone-TEOS silicate glass layers

a technology of ozone and teos silicate glass, which is applied in the field of compound depositing process, can solve problems such as reducing hydrophilic surface characteristics, and achieve the effect of minimizing the surface effect of different materials

Inactive Publication Date: 2005-11-17
IYER RAVI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The method ensures uniform deposition rates and eliminates cavities between conductor lines, resulting in dense, high-quality silicate glass layers with improved conformality and reduced risk of moisture trapping, enhancing the reliability of integrated circuits.

Problems solved by technology

It is hypothesized that the plasma treatment burns off the carbon particle impurities that are present on the surface of the dirty silicate glass base layer, thereby reducing the hydrophilic surface characteristics.

Method used

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  • Method for improving thickness uniformity of deposited ozone-TEOS silicate glass layers
  • Method for improving thickness uniformity of deposited ozone-TEOS silicate glass layers
  • Method for improving thickness uniformity of deposited ozone-TEOS silicate glass layers

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Embodiment Construction

[0022] This invention is embodied in a process for depositing highly conformal silicate glass layers via chemical vapor deposition through the reaction of tetraethylorthosilane (TEOS) and O3. The entire process, which can be performed in a single cluster tool or even in a single chamber, begins by placing an in-process semiconductor wafer in a plasma-enhanced chemical vapor deposition chamber. In a typical case, hundreds of integrated circuits are undergoing simultaneous fabrication on the wafer, and each integrated circuit has topography with multiple surface constituents. FIG. 2 is a cross-sectional view that depicts a small portion of an integrated circuit identical to that of FIG. 1. A plurality of parallel aluminum conductor lines 12 overlies a silicon dioxide layer 13 (previously referred to as PECVD-TEOS glass layer 113). Each aluminum conductor line 12 is covered with a titanium nitride layer 14, which served as an anti-reflective coating during a laser reflow operation whic...

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Abstract

A method for depositing highly conformal silicate glass layers via chemical vapor deposition through the reaction of TEOS and O3 is provided, comprising placing an in-process semiconductor wafer having multiple surface constituents in a plasma-enhanced chemical vapor deposition chamber.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is a divisional of application Ser. No. 10 / 928,505, filed Aug. 26, 2004, pending, which is a continuation of application Ser. No. 10 / 371,674, filed Feb. 21, 2003, now U.S. Pat. No. 6,784,122, issued Aug. 31, 2004, which is a continuation of application Ser. No. 08 / 841,908, filed Apr. 17, 1997, now U.S. Pat. No. 6,551,665, issued Apr. 22, 2003.BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] This invention relates to processes for depositing compounds by means of chemical vapor deposition and, more particularly, to processes for depositing silicon dioxide layers using ozone and tetraethylorthosilane as precursor compounds. [0004] 2. State of the Art [0005] Doped and undoped silicon dioxides, which are commonly referred to as silicate glasses, are widely used as dielectrics in integrated circuits. Although silicon dioxide possesses a tetrahedral matrix, which will impart a crystalline structure to the m...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C03C17/02C23C16/02C23C16/40C23C16/56H01L21/316H01L21/4763H01L21/768
CPCC03C17/02H01L21/76837C23C16/0272C23C16/401C23C16/56H01L21/02126H01L21/02164H01L21/022H01L21/02271H01L21/02274H01L21/02304H01L21/0234H01L21/31612H01L21/76826H01L21/76834C23C16/0245H01L21/02129H01L21/02131
Inventor IYER, RAVI
Owner IYER RAVI