ZnO group epitaxial semiconductor device and its manufacture

Abstract

A method for manufacturing a semiconductor device includes the steps of: (a) preparing a non-polar single crystal substrate; (b) epitaxially growing an MgO layer on the non-polar single crystal substrate to a thickness of 3 nm or thicker to have rocksalt structure at a substrate temperature of 500° C. to 800° C.; (c) growing on the MgO layer a low temperature growth layer made of ZnO group material at a substrate temperature of 500° C. or lower; (d) annealing the low temperature growth layer above the substrate at a temperature of 700° C. or higher; and (e) epitaxially growing a high temperature growth layer of ZnO group material on the annealed low temperature growth layer at a temperature of 600° C. or higher.

Description

CROSS REFERENCE TO RELATED APPLICATION [0001] This application is based on and claims priority of Japanese Patent Application No. 2004-001240 filed on Jan. 6, 2004, the entire contents of which are incorporated herein by reference. BACKGROUND OF THE INVENTION [0002] A) Field of the Invention [0003] The present invention relates to a semiconductor device having a ZnO layer or a ZnO group material layer and its manufacture. The ZnO group material is a material which contains one or more elements selected from a group consisting of (Zn, Mg, Cd and Be) and one or more elements selected from a group consisting of (O, S, Se, and Te) and has the same crystal structure as that of ZnO. [0004] B) Description of the Related Art [0005] Zinc oxide (ZnO) is an attractive material for high-efficiency, ultraviolet laser diodes (LD), and light-emitting diodes (LED), because it has a direct transition type energy gap of 3.37 eV at room temperature with a large excitonic binding energy of 60 meV. Opti...

AI Technical Summary

Benefits of technology

This approach allows for the selective growth of ZnO layers with improved crystallinity and doping capabilities, enhancing the quality of semiconductor devices for light emission applications by maintaining high growth temperatures during nitrogen doping without compromising crystallinity.

Problems solved by technology

It is therefore difficult to form an epitaxial layer having a good crystalline quality.

The O plane has poor crystalline characteristics with respect to the characteristics of semiconductor devices.

However, this low growth temperature is likely to deteriorate crystallinity and increase dislocation densities, non-radiative centers, and residual carrier concentration caused by defects.

The possibility of obtaining only a film insufficient for light emission devices is not negligible.

However, these substrates are expensive.

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