Unlock instant, AI-driven research and patent intelligence for your innovation.

Phase change memory device and write method thereof

a memory device and phase change technology, applied in static storage, digital storage, instruments, etc., can solve problems such as slow programming speed, and achieve the effect of low power consumption and fast writing speed and a writing method

Active Publication Date: 2011-11-01
SAMSUNG ELECTRONICS CO LTD
View PDF10 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The phase change memory device achieves fast data writing speed and low power consumption by varying the write pulse duration and frequency, enabling efficient data retention and reducing power consumption through optimized data rewriting strategies.

Problems solved by technology

A non-volatile memory device, e.g., a read only memory (ROM), a flash memory, etc., does not have the above-mentioned power supply limitation but has a slow programming speed.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Phase change memory device and write method thereof
  • Phase change memory device and write method thereof
  • Phase change memory device and write method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041]Korean Patent Application No. 10-2008-0012292, filed on Feb. 11, 2008, in the Korean Intellectual Property Office, and entitled: “Phase Change Memory Device, Write Method Thereof,” is incorporated by reference herein in its entirety.

[0042]Example embodiments will now be described more fully hereinafter with reference to the accompanying drawings; however, they may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0043]A phase change memory device of embodiments may adjust an applying time of a write current in order to write volatile or non-volatile data therein. If volatile data are stored in a memory cell, an operation for rewriting corresponding data may be repeated periodically for data retention. An applying time of a write current may be variousl...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A phase change memory device and a write method thereof allow writing of both volatile and non-volatile data on the phase change memory device. The phase change memory device may be written by setting a write mode as one of a volatile write mode and a non-volatile write mode, and writing data as volatile or non-volatile by applying a write pulse corresponding to the write mode, wherein, when power is not supplied to the phase change memory device, the non-volatile data is retained and the volatile data is not retained.

Description

BACKGROUND[0001]1. Field[0002]Embodiments relate to a semiconductor memory device. More particularly, embodiments relate to a phase change memory device and a write method thereof.[0003]2. Description of the Related Art[0004]A memory semiconductor device is classified into a volatile semiconductor memory device and a non-volatile semiconductor memory device based on whether or not power supply is required to maintain stored information.[0005]A volatile memory device, e.g., a dynamic random access memory (DRAM), a static random access memory (SRAM), etc., has a fast operating speed but needs to be supplied with a power source to maintain stored information. A non-volatile memory device, e.g., a read only memory (ROM), a flash memory, etc., does not have the above-mentioned power supply limitation but has a slow programming speed. Accordingly, a new kind of a memory device is on demand for overcoming various limitations of a currently used memory device.[0006]In view of miniaturizatio...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(United States)
IPC IPC(8): G11C11/00
CPCG11C13/0004G11C13/0033G11C13/0069G11C14/00G11C16/3431G11C29/028G11C2013/0078G11C2213/72G11C11/005G11C7/22
Inventor HA, DAE-WONLEE, JUNG-HYUKJEONG, GI-TAEKIM, HYEONG-JUN
Owner SAMSUNG ELECTRONICS CO LTD