3D Integrated Circuit Chips and Methods for Manufacturing Them

Abstract

The invention relates to a 3D integrated circuit (3D IC) and a method for its fabrication. The 3D IC comprises a die containing a high-electron mobility transistor (IEMT) active component. The IEMT active component is made up of layers of composite semiconductors on a single-crystal composite semiconductor layer. The 3D IC also includes an audio component integrated into a single-crystal composite semiconductor layer. 3D IC chips also include passive components integrated into the backend (backend-ol-linc) layers of the die on a single-crystal composite semiconductor layer.