LIGHT-Emitting diode integrated circuit

VN10059314BActive Publication Date: 2026-07-15SEOUL VIOSYS CO LTD
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Patent Information

Application Number
VN1202001114
Authority / Receiving Office
VN · VN
Patent Type
Patents
Current Assignee / Owner
Filing Date
2018-09-14
Publication Date
2026-07-15
Estimated Expiration
2038-09-14
Patent Text Reader

Abstract

The invention relates to a light-emitting diode integrated circuit with a high refractive index of light. Because the light-emitting diode circuit, according to a design scheme, includes: a base; a conductive layer of the highest power grade arranged around the substrate; The top plate consists of an active layer and a second-type semiconductor layer. The top plate is arranged on a region of the first-type semiconductor layer to create the top surface of the first-type semiconductor layer along the edge of the first-type semiconductor layer; the adjacent layer(s) cover the side surface of the top plate; and the reflective structure is placed at a distance from the adjacent coating(s) and is superimposed on the first type of semiconductor material that is exposed.
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