Thin-film tranzitos and methods for manufacturing thin-film tranzitos, plate substrate, and display devices
VN10059745BActive Publication Date: 2026-08-03BOE TECHNOLOGY GROUP CO LTD
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Patent Information
- Application Number
- VN1202207871
- Authority / Receiving Office
- VN · VN
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2021-01-28
- Publication Date
- 2026-08-03
- Estimated Expiration
- 2041-01-28
Abstract
The invention is in the field of display technology and relates to a waveform transistor, a method for producing waveform transistors, a display circuit and a display device. The active layer of the waveform transistor consists of at least two stacked layers of metal oxide semiconductors; at least two layers of these oxide semiconductors consist of a channel layer and a first shield layer; the metal in the metal oxide semiconductor layer in the channel layer consists of the element tin, and at least one of the elements indium, gallium and zinc. This first protective layer contains praseodymium, and the (O) praseodymium element in the first protective layer is used to absorb photogenerated electrons in the metal oxide substrate and reduce the photogenerated current generated by illumination. This thin-film transistor has high adhesion and high mobility of the charge carriers.
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