INTEGRATED CIRCUITS AND BLOCK-ON-INTEGRATED CIRCUITS

Abstract

The invention relates to an integrated circuit and a block on an integrated circuit. The block on the IC comprises a first Mx-layer coupling assembly coupled to a first voltage and a second Mx-layer coupling assembly coupled to a second voltage different from the first, and a MIM capacitor structure below the M-layer. The MIM capacitor structure consists of CTM, CBM and an insulating layer between the parts of CTM and CRM. The first M-layer coupling assembly is coupled to CTM. The second Mx-layer coupling assembly is coupled to CBN. The MIM capacitor structure is located between the Mx and Mx-layers. The MIM capacitor structure consists of multiple gaps. The MIM capacitor structure is continuous within the block and extends to at least two edges of the block. By one configuration, the MIM capacitor structure extends to each edge of the block.