Heteromorphic structures and optoelectronic devices with reduced optical losses.

VN10061301BActive Publication Date: 2026-10-01SENSOR ELECTRONIC TECHNOLOGY INC
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Patent Information

Application Number
VN1202206178
Authority / Receiving Office
VN · VN
Patent Type
Patents
Current Assignee / Owner
Filing Date
2021-03-19
Publication Date
2026-10-01
Estimated Expiration
2041-03-19
Patent Text Reader

Abstract

The design addresses heterostructure with reduced optical losses. The heterostructure consists of a group of n-type layers; an active region that generates emission at the peak wavelength of the emitted light; and a group of p-type layers placed adjacent to the active region. A reflective structure can be placed adjacent to the group of p-type layers. The thickness of the group of p-type layers can be structured to enhance the interference of the reflected emission with the emission emitted by the active region in the direction toward the group of n-type layers.
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