Method for manufacturing tandem perovskite solar cell and tandem perovskite solar cell manufactured thereby

Abstract

The present invention relates to a method for manufacturing a tandem perovskite solar cell incorporating a masking paste in a process of manufacturing a solar cell, and a tandem perovskite solar cell manufactured thereby. The method comprises the steps of: printing a masking paste on both ends of an upper portion of a solar cell; printing a masking paste on both ends of an upper portion of an electron transport layer; and removing the masking paste by spraying an organic solvent or water onto each masking paste.

Description

Method for manufacturing a tandem perovskite solar cell and a tandem perovskite solar cell manufactured therefrom

[0001] The present invention relates to a method for manufacturing a tandem perovskite solar cell by introducing a masking paste in a process for manufacturing a solar cell, and to a tandem perovskite solar cell manufactured therefrom.

[0002]

[0003] To address the depletion of fossil fuels and the global environmental problems caused by their use, research on renewable and clean alternative energy sources such as solar, wind, and hydroelectric power is actively underway. Among these, interest in solar cells, which directly convert sunlight into electrical energy, is increasing significantly. Here, a solar cell refers to a battery that generates current and voltage by utilizing the photovoltaic effect, which absorbs light energy from sunlight to generate electrons and holes.

[0004] Currently, it is possible to manufacture np diode-type silicon (Si) single-crystal-based solar cells with a light energy conversion efficiency of over 20%, and they are being used in actual solar power generation. There are also solar cells using compound semiconductors such as gallium arsenide (GaAs), which have even better conversion efficiency. However, these inorganic semiconductor-based solar cells require materials purified to a very high degree of purity to achieve high efficiency, so a large amount of energy is consumed in purifying the raw materials. Furthermore, expensive process equipment is required to process the raw materials into single crystals or thin films, which limits the ability to lower the manufacturing cost of solar cells and has been a stumbling block to large-scale operation.

[0005] Accordingly, in order to manufacture solar cells at a low cost, it is necessary to significantly reduce the cost of materials or manufacturing processes used as core components; as an alternative to inorganic semiconductor-based solar cells, research is being conducted on perovskite solar cells, which can be manufactured using low-cost materials and processes.

[0006] The general structural formula of a perovskite structure is ABX3, in which an anion is located at the X site, a large cation is located at the A site, and a small cation is located at the B site.

[0007] Unlike crystalline materials, perovskite compounds, which are polyionic solids, contain ionic defects. When devices composed of perovskites are exposed to external environments (heat, light, bias, stress, moisture, etc.), these defects act as factors that impair device performance. This causes problems that complicate not only the stability of perovskite solar cells but also the definition of steady-state conditions and the accurate measurement of performance parameters.

[0008] Meanwhile, tandem solar cells are manufactured by stacking a perovskite solar cell capable of absorbing light in the short wavelength range on top of a crystalline silicon solar cell. In the conventional manufacturing of such tandem solar cells, a mask is used to prevent losses due to leakage current, but when manufacturing large-area tandem solar cells that use the entire wafer area, such as M6, M10, and G12, laser isolation is performed. However, there was a problem in that damage occurred to the tandem solar cells manufactured by such laser isolation.

[0009]

[0010] The present invention was devised to overcome the aforementioned problems and aims to provide a method for manufacturing a tandem perovskite solar cell and a tandem perovskite solar cell manufactured therefrom, which can effectively manufacture a tandem perovskite solar cell by minimizing leakage current through the introduction of a masking paste in the process of manufacturing a solar cell.

[0011]

[0012] To solve the above-mentioned problem, the method for manufacturing a tandem perovskite solar cell according to the present invention may include: a first step of preparing a solar cell; a second step of printing a masking paste on both ends of the upper part of the solar cell; a third step of forming a recombination layer on the solar cell and the masking paste; a fourth step of removing the masking paste by spraying an organic solvent or water onto the masking paste; a fifth step of sequentially forming a hole transport layer, a perovskite light absorption layer, and an electron transport layer on the recombination layer; a sixth step of printing a masking paste on both ends of the upper part of the electron transport layer; a seventh step of forming a transparent electrode on the electron transport layer and the masking paste; an eighth step of removing the masking paste by spraying an organic solvent or water onto the masking paste; and a ninth step of forming a metal electrode on the transparent electrode.

[0013] In addition, a method for manufacturing another tandem perovskite solar cell of the present invention may include a first step of preparing a laminate in which a solar cell, a recombination layer, a hole transport layer, a perovskite light absorption layer, and an electron transport layer are sequentially stacked; a second step of printing a masking paste on both ends of the upper portion of the electron transport layer; a third step of forming a transparent electrode on the upper portion of the electron transport layer and the masking paste; a fourth step of removing the masking paste by spraying an organic solvent or water onto the masking paste; and a fifth step of forming a metal electrode on the upper portion of the transparent electrode.

[0014] In addition, another method for manufacturing a tandem perovskite solar cell according to the present invention may include a first step of preparing a solar cell, a second step of printing a masking paste on both ends of the upper part of the solar cell, a third step of forming a recombination layer on the solar cell and the masking paste, a fourth step of removing the masking paste by spraying an organic solvent or water onto the masking paste, and a fifth step of sequentially forming a hole transport layer, a perovskite light absorption layer, an electron transport layer, a transparent electrode, and a metal electrode on the recombination layer.

[0015] As a preferred embodiment of the present invention, the masking paste comprises a base resin and an inorganic filler and may have a viscosity of 100 to 300 kcps (25°C).

[0016] As a preferred embodiment of the present invention, the masking paste may comprise 1 to 10 weight percent of a base resin and 40 to 90 weight percent of an inorganic filler based on the total weight percent.

[0017] As a preferred embodiment of the present invention, the base resin may include one or more selected from ethyl cellulose resin, cellulose acetate resin, cellulose acetate butyrate resin, cellulose acetate propionate resin, polyvinyl alcohol resin, polyvinyl butyral resin, nitrocellulose resin, acrylic resin, and terpene resin.

[0018] As a preferred embodiment of the present invention, the inorganic filler may include one or more selected from aluminum oxide (Al2O3), tantalum pentoxide (Ta2O5), silicon dioxide (SiO2), silicon nitride (Si3N4), barium titanate (BaTiO3), lead titanate (PbTiO3), yttrium oxide (Y2O3), zirconium dioxide (ZrO2), silicon monoxide (SiO), boron monoxide (BO), silver (Ag), and copper (Cu).

[0019] As a preferred embodiment of the present invention, the inorganic filler may have an average particle size of 1 to 5 μm.

[0020] As a preferred embodiment of the present invention, the organic solvent may include one or more selected from ethanol, methanol, butanol, isopropyl alcohol, ethyl acetate, methyl acetate, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetate, and terpineol.

[0021] As a preferred embodiment of the present invention, the masking paste may have a width of 30 to 300 μm and a height of 10 to 80 μm.

[0022] As a preferred embodiment of the present invention, the perovskite light-absorbing layer may include a perovskite material represented by the following chemical formula 1.

[0023] [Chemical Formula 1]

[0024] CMX3

[0025] In the above chemical formula 1, C is a monovalent cation, M is a divalent cation, and X is a monovalent anion.

[0026] As a preferred embodiment of the present invention, the solar cell of the first step may be a polycrystalline silicon solar cell, a crystalline silicon solar cell, a perovskite solar cell, a gallium arsenide (GaAs) solar cell, a cadmium telluride (CdTe) solar cell, a CIGS (CuInGaSe) solar cell, a CZTS (Cu2ZnSnS4) solar cell, an organic solar cell, a dye-sensitized solar cell, or a group 3-5 compound solar cell.

[0027] Meanwhile, the tandem perovskite solar cell of the present invention may be manufactured by the method for manufacturing the tandem perovskite solar cell of the present invention.

[0028]

[0029] The method for manufacturing a tandem perovskite solar cell according to the present invention can manufacture an effective tandem perovskite solar cell by minimizing leakage current.

[0030] In addition, the manufacturing method of the tandem perovskite solar cell of the present invention has a simple and easy manufacturing process.

[0031] In addition, the method for manufacturing a tandem perovskite solar cell according to the present invention can minimize damage that may occur during the manufacturing process, thereby enabling the production of a tandem perovskite solar cell with excellent performance.

[0032]

[0033] FIG. 1 is a process diagram showing the second step of a method for manufacturing a tandem perovskite solar cell according to a preferred embodiment of the present invention.

[0034] FIG. 2 is a process diagram showing the third step of a method for manufacturing a tandem type perovskite solar cell half-cell according to a preferred embodiment of the present invention.

[0035] FIG. 3 is a process diagram showing the fourth step of a method for manufacturing a tandem type perovskite solar cell half-cell according to a preferred embodiment of the present invention.

[0036] FIG. 4 is a process diagram showing the fifth step of a method for manufacturing a tandem perovskite solar cell half-cell according to a preferred embodiment of the present invention.

[0037] FIG. 5 is a process diagram showing the sixth step of a method for manufacturing a tandem type perovskite solar cell half-cell according to another preferred embodiment of the present invention.

[0038] FIG. 6 is a process diagram showing the seventh step of a method for manufacturing a tandem type perovskite solar cell half-cell according to another preferred embodiment of the present invention.

[0039] FIG. 7 is a process diagram showing the eighth step of a method for manufacturing a tandem perovskite solar cell half-cell according to another preferred embodiment of the present invention.

[0040] FIG. 8 is a process diagram showing the ninth step of a method for manufacturing a tandem perovskite solar cell half-cell according to another preferred embodiment of the present invention.

[0041]

[0042] The present invention will be described in more detail below.

[0043] Tandem solar cells are manufactured by stacking a perovskite solar cell capable of absorbing light in the short wavelength range on top of a crystalline silicon solar cell. In the conventional manufacturing of such tandem solar cells, a mask is used to prevent losses due to leakage current, but when manufacturing large-area tandem solar cells that utilize the entire wafer area, laser isolation is performed. However, there was a problem in that damage occurred to the tandem solar cells manufactured by such laser isolation.

[0044] Accordingly, the present invention relates to a method for manufacturing a tandem perovskite solar cell by introducing a masking paste in a process for manufacturing a solar cell, and a tandem perovskite solar cell manufactured therefrom.

[0045]

[0046] The method for manufacturing a tandem perovskite solar cell of the present invention comprises steps 1 through 9.

[0047] The first step of the method for manufacturing a tandem perovskite solar cell of the present invention can be to prepare a solar cell.

[0048] The solar cell may be a polycrystalline silicon solar cell, a crystalline silicon solar cell, a perovskite solar cell, a gallium arsenide (GaAs) solar cell, a cadmium telluride (CdTe) solar cell, a CIGS (CuInGaSe) solar cell, a CZTS (Cu2ZnSnS4) solar cell, an organic solar cell, a dye-sensitized solar cell, or a group 3-5 compound solar cell.

[0049] In addition, there is no separate limit on the thickness of the solar cell, but it can preferably have a thickness of 140 to 250 μm, and more preferably 160 to 200 μm.

[0050] In addition, when using silicon solar cells doped with n or p-type impurities as solar cells, the silicon solar cells doped with n or p-type impurities can be used after removing the SiOx oxide film by treating them with hydrofluoric acid and then removing the residual hydrofluoric acid using ultrapure water.

[0051]

[0052] Referring to FIG. 1, the second step of the method for manufacturing a tandem perovskite solar cell of the present invention may print a masking paste (1', 1") on both ends of the upper part of the solar cell (10).

[0053] Various printing methods used in the industry can be used to form the masking paste (1', 1"), and preferably, a screen printing process can be performed.

[0054] In addition, the masking paste (1', 1") may have a viscosity of 100 to 300 kcps (25°C), preferably 150 to 250 kcps (25°C). If the viscosity is less than 100 kcps (25°C), the light-receiving area may be reduced, and there may be a problem with the difficulty of removing it after use. If the viscosity exceeds 250 kcps (25°C), there may be a problem with the wire breaking.

[0055] Additionally, the masking paste (1', 1") may include a base resin and an inorganic filler, and may include a remainder of a solvent. In this case, any substance capable of dissolving the base resin may be used as the solvent, and preferably, it may include one or more selected from ethanol, methanol, butanol, isopropyl alcohol, ethyl acetate, methyl acetate, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetate, and terpineol.

[0056] Specifically, the masking paste (1', 1") may comprise, based on the total weight percentage, 1 to 10 weight percent of base resin, preferably 3 to 5 weight percent, 40 to 90 weight percent of inorganic filler, preferably 50 to 65 weight percent, and the remainder being a solvent. If the inorganic filler exceeds 90 weight percent, there may be a problem with not being able to form a paste, and if it is less than 40 weight percent, there may be a problem with not being able to form the masking paste (1', 1") to the desired height. Additionally, if the base resin exceeds 10 weight percent, there may be a problem with wire breakage, and if it is less than 1 weight percent, there may be a problem with not being able to bind the inorganic filler.

[0057] In addition, the base resin may include one or more selected from ethyl cellulose resin, cellulose acetate resin, cellulose acetate butyrate resin, cellulose acetate propionate resin, polyvinyl alcohol resin, polyvinyl butyral resin, nitrocellulose resin, acrylic resin, and terpene resin, and preferably may include ethyl cellulose resin.

[0058] In addition, the inorganic filler may include one or more selected from aluminum oxide (Al2O3), tantalum pentoxide (Ta2O5), silicon dioxide (SiO2), silicon nitride (Si3N4), barium titanate (BaTiO3), lead titanate (PbTiO3), yttrium oxide (Y2O3), zirconium dioxide (ZrO2), silicon monoxide (SiO), boron monoxide (BO), silver (Ag), and copper (Cu), and preferably may include aluminum oxide (Al2O3).

[0059] In addition, the inorganic filler may have an average particle size of 1 to 5 μm, preferably 2 to 3 μm. If the average particle size is less than 1 μm, there may be a problem of wire breakage, and if it exceeds 5 μm, there may be a problem of not achieving the desired masking, as well as a problem of the line width becoming excessively wide.

[0060] In addition, the masking paste (1', 1") may have a width of 30 to 300 μm, preferably 100 to 200 μm, and a height of 10 to 80 μm, preferably 20 to 60 μm. If such a width exceeds 300 μm, there may be a problem with reduced efficiency of the solar cell, and if the height is less than 10 μm, there may be a problem with difficulty in removing it after use.

[0061]

[0062] Referring to FIG. 2, the third step of the method for manufacturing a tandem perovskite solar cell of the present invention may form a recombination layer (20) on top of the solar cell (10) and / or masking paste (1', 1").

[0063] The recombination layer (20) is a layer that induces the recombination of electrons and holes generated in the solar cell (10) and the perovskite light absorption layer (40) to be described later, and may be a transparent thin film on which ITO (Indium Tin Oxide), FTO (Fluorine-doped Tin Oxide), ATO (Sb2O3-doped Tin Oxide), GTO (Gallium-doped Tin Oxide), ZTO (tin-doped zinc oxide), ZTO:Ga (gallium-doped ZTO), IGZO (Indium-gallium zinc oxide), IZO (Indium-doped zinc oxide), or AZO (Aluminum-doped zinc oxide) is deposited.

[0064] Additionally, as an example of forming a recombination layer (20), a recombination layer (20) can be formed on a solar cell (10) and / or a masking paste (1', 1") through a sputtering process.

[0065] Additionally, the thickness of the recombination layer (20) is not limited, but preferably has a thickness of 5 nm to 50 nm, more preferably 15 nm to 25 nm.

[0066]

[0067] Referring to FIG. 3, the fourth step of the method for manufacturing a tandem perovskite solar cell of the present invention can remove the masking paste (1', 1") by spraying an organic solvent or water onto the masking paste (1', 1").

[0068] At this time, one or more selected from ethanol, methanol, butanol, isopropyl alcohol, ethyl acetate, methyl acetate, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetate, and terpineol may be included as organic solvents, and preferably ethanol may be included.

[0069] In addition, while removing the masking paste (1', 1"), the recombination layer (20) formed on the upper surface of the masking paste (1', 1") can also be removed together, and after removing the masking paste (1', 1"), the remaining organic solvent can be removed by heat treatment at a temperature of 80 to 150°C, preferably 110 to 120°C, for 5 to 30 minutes, preferably 5 to 10 minutes.

[0070]

[0071] Referring to FIG. 4, the fifth step of the method for manufacturing a tandem perovskite solar cell of the present invention may sequentially form a hole transport layer (30), a perovskite light absorption layer (40), and an electron transport layer (50) on top of a recombination layer (20).

[0072] The hole transport layer (30) (Hole transport layer, HTL, or hole transport layer) is a layer that transports holes formed in the perovskite light absorption layer (40) described later and simultaneously blocks the movement of electrons, and may include an inorganic and / or organic hole transport material.

[0073] At this time, the inorganic hole transport material may include one or more selected from nickel oxide (NiOx), CuSCN, CuCrO2, CuI, MoO, and V2O5.

[0074] In addition, organic hole transporters include carbazole derivatives, polyarylalkane derivatives, phenylenediamine derivatives, arylamines, amino-substituted chalcone derivatives, styrylanthracene derivatives, fluorene derivatives, hydrazone derivatives, stilbene derivatives, silazane derivatives, aromatic tertiary amine compounds, styrylamine compounds, aromatic dimethylidine compounds, porphyrin compounds, phthalocyanine compounds, polythiophene derivatives, polypyrrole derivatives, polyparaphenylenevinylene derivatives, pentacene, coumarin 6 (3-(2-benzothiazolyl)-7-(diethylamino)coumarin), ZnPC (zinc phthalocyanine), CuPC (copper phthalocyanine), TiOPC (titanium oxide phthalocyanine), Spiro-MeOTAD(2,2',7,7'-tetrakis(N,Np-dimethoxyphenylamino)-9,9'-spirobifluorene), F16CuPC(copper(II) 1,2,3,4,8,9,10,11,15,16,17,18,22,23,24,25-hexadecafluoro-29H,31H-phthalocyanine), SubPc (boron subphthalocyanine chloride) and N3(cis-di(thiocyanato)-bis(2,2'-bipyridyl-4,4'-dicarboxylic acid)-ruthenium(II), P3HT(poly[3-hexylthiophene]), MDMO-PPV(poly[2-methoxy-5-(3',7'-dimethyloctyloxyl)]-1,4-phenylene vinylene), MEH-PPV(poly[2-methoxy-5-(2''-ethylhexyloxy)-p-phenylene vinylene]), P3OT(poly(3-octyl thiophene)), POT(poly(octyl thiophene)), P3DT(poly(3-decyl thiophene)),P3DDT(poly(3-dodecyl thiophene), PPV(poly(p-phenylene vinylene)), TFB(poly(9,9'-dioctylfluorene-co-N-(4-butylphenyl)diphenyl amine), 폴리아닐린(Polyaniline), Spiro-MeOTAD([2,22′,7,77′-tetrkis (N,N-di-pmethoxyphenyl amine)-9,9,9′-spirobi fluorine]), PCPDTBT(Poly[2,1,3-benzothiadiazole-4,7-diyl[4,4-bis(2-ethylhexyl-4H-cyclopenta [2,1-b:3,4-b']dithiophene-2,6-diyl]], Si-PCPDTBT(poly[(4,4′-bis(2-ethylhexyl)dithieno[3,2-b:2′,3′-d]silole)-2,6-diyl-alt-(2,1,3-benzothiadiazole)-4,7-diyl]), PBDTTPD(poly((4,8-diethylhexyloxyl), PFDTBT(poly[2,7-(9-(2-ethylhexyl)-9-hexyl-fluorene)-alt-5,5-(4', 7, -di-2-thienyl-2',1', 3'-benzothiadiazole)]), PFO-DBT(poly[2,7-.9,9-(dioctyl-fluorene)-alt-5,5-(4',7'-di-2-.thienyl-2', 1', 3'-benzothiadiazole)]), PSiFDTBT(poly[(2,7-dioctylsilafluorene)-2,7-diyl-alt-(4,7-bis(2-thienyl)-2,1,3-benzothiadiazole)-5,5′-diyl]), PCDTBT(Poly [[9-(1-octylnonyl)-9H-carbazole-2,7-diyl] -2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl]), PFB(poly(9,It may include one or more selected from 9′-dioctylfluorene-co-bis(N,N′-(4,butylphenyl))bis(N,N′-phenyl-1,4-phenylene)diamine), F8BT(poly(9,9′-dioctylfluorene-cobenzothiadiazole), PEDOT (poly(3,4-ethylenedioxythiophene)), PEDOT:PSS poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate), PTAA (poly(triarylamine)), 2-PACz, MeO-2PACz, Br-2PACz, Me-4PACz, MeO-4PACz, and 6-PACz.

[0075] In addition, methods for forming the hole transport layer (30) may include coating methods and vacuum deposition methods, and coating methods may include gravure coating, bar coating, printing, spraying, spin coating, dip coating, and die coating.

[0076] In addition, the thickness of the hole transport layer (30) is not limited, but preferably has a thickness of 5 nm to 40 nm, more preferably 10 nm to 30 nm.

[0077] The perovskite light-absorbing layer (40) may include a perovskite material represented by the following chemical formula 1.

[0078] [Chemical Formula 1]

[0079] CMX3

[0080] In the above Formula 1, C is a monovalent cation and may include an amine, ammonium, a Group 1 metal, a Group 2 metal, and / or other cation or cation-like compound, preferably formamidinium (FA), methylammonium (MA), FAMA, CsFAMA, CsFA, or N(R)4 +(Here, R may be the same or different group, and R may be a straight-chain alkyl group having 1 to 5 carbon atoms, a branched-chain alkyl group having 3 to 5 carbon atoms, a phenyl group, an alkylphenyl group, an alkoxyphenyl group, or an alkyl halide.)

[0081] In addition, M of Chemical Formula 1 is a divalent cation and may include one or two types selected from Fe, Co, Ni, Cu, Sn, Pb, Bi, Ge, Ti, Eu, and Zr.

[0082] In addition, X of Formula 1 is a monovalent anion and may include one or more halide elements selected from F, Cl, Br, and I and / or a Group 16 anion, and in a preferred example, X is I x Br 3-x (0 ≤ x ≤ 3) can be.

[0083] And, as a preferred embodiment of Chemical Formula 1, FAPbI x Br 3-x (0 ≤ x ≤ 3), MAPbI x Br 3-x (0 ≤ x ≤ 3), CSFAPbI x Br 3-x (0 ≤ x ≤ 3), CSMAFAPbI x Br 3-x (0 ≤ x ≤ 3), CH3NH3PbX3(X= Cl, Br, I, BrI2, or Br2I), CH3NH3SnX3(X= Cl, Br or I), CH(=NH)NH3PbX3(X= Cl, Br, I, BrI2, or Br2I) or CH(=NH)NH3SnX3(X= Cl, Br or I).

[0084] Meanwhile, the perovskite light absorption layer (40) may be a single layer composed of the same perovskite material, or a multilayer structure in which multiple layers composed of different perovskite materials are stacked, and may include a different type of perovskite material different from the one type of perovskite material having a pillar shape, plate shape, needle shape, wire shape, rod shape, etc. inside the light absorption layer composed of one type of perovskite material.

[0085] Additionally, as a method for forming the perovskite light-absorbing layer (40), a deposition process and a solution process can be performed. The deposition process can be any general deposition process used in the industry, such as a thermal evaporation process, a vacuum deposition process, an atomic layer deposition (ALD) process, a chemical vapor deposition (CVD) process, or a physical vapor deposition (PVD) process. The solution process can be any general solution process used in the industry, such as a spin coating process, a slot die coating process, a blade coating process, a printing coating process, a gravure coating process, or a spray coating process.

[0086] In addition, the thickness of the perovskite light absorption layer (40) is not limited, but preferably has a thickness of 50 nm to 800 nm, more preferably 300 nm to 600 nm.

[0087] The electron transporting layer (50) (Electron transporting layer, ETL) is a layer that transports electrons formed in the perovskite light absorption layer (40) while blocking the movement of holes.

[0088] The electron transport layer (50) may include one or more selected from tin oxide (SnOx), nickel oxide (NiOx), tin oxide (SnO2), titanium dioxide (TiO2), zinc oxide (ZnO), barium tin oxide (BaSnO3), niobium hydroxide (NbOH) and niobium pentoxide (Nb2O5).

[0089] Additionally, the electron transport layer (50) may include inorganic and / or organic materials.

[0090] At this time, the inorganic material may include one or more selected from nickel oxide (NiOx), CuSCN, CuCrO2, CuI, CuOx, CuS, CuI, CuPc, CIS, CuGaO2, PbS, MoOx, AlOx (Aluminum oxide), CuAlOx, aluminum oxide nanoparticles, silica nanoparticles, nickel oxide nanoparticles, hafnium nanoparticles, and V2O5.

[0091] In addition, organic materials include carbazole derivatives, polyarylalkane derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, styrylanthracene derivatives, fluorene derivatives, hydrazone derivatives, stilbene derivatives, silazane derivatives, aromatic tertiary amine compounds, styrylamine compounds, aromatic dimethylidine compounds, porphyrin compounds, phthalocyanine compounds, polythiophene derivatives, polypyrrole derivatives, polyparaphenylenevinylene derivatives, pentacene, coumarin 6 (3-(2-benzothiazolyl)-7-(diethylamino)coumarin), ZnPC (zinc phthalocyanine), CuPC (copper phthalocyanine), TiOPC (titanium oxide phthalocyanine), Spiro-MeOTAD(2,2',7,7'-tetrakis(N,Np-dimethoxyphenylamino)-9,9'-spirobifluorene), F16CuPC(copper(II) 1,2,3,4,8,9,10,11,15,16,17,18,22,23,24,25-hexadecafluoro-29H,31H-phthalocyanine), SubPc (boron subphthalocyanine chloride) and N3(cis-di(thiocyanato)-bis(2,2'-bipyridyl-4,4'-dicarboxylic acid)-ruthenium(II), P3HT(poly[3-hexylthiophene]), MDMO-PPV(poly[2-methoxy-5-(3',7'-dimethyloctyloxyl)]-1,4-phenylene vinylene), MEH-PPV(poly[2-methoxy-5-(2''-ethylhexyloxy)-p-phenylene vinylene]), P3OT(poly(3-octyl thiophene)), POT(poly(octyl thiophene)), P3DT(poly(3-decyl thiophene)),P3DDT(poly(3-dodecyl thiophene), PPV(poly(p-phenylene vinylene)), TFB(poly(9,9'-dioctylfluorene-co-N-(4-butylphenyl)diphenyl amine), 폴리아닐린(Polyaniline), Spiro-MeOTAD([2,22′,7,77'-tetrkis (N,N-di-pmethoxyphenyl amine)-9,9,9′'-spirobi fluorine]), PCPDTBT(Poly[2,1,3-benzothiadiazole-4,7-diyl[4,4-bis(2-ethylhexyl-4H-cyclopenta [2,1-b:3,4-b']dithiophene-2,6-diyl]], Si-PCPDTBT(poly[(4,4′'-bis(2-ethylhexyl)dithieno[3,2-b:2′',3′'-d]silole)-2,6-diyl-alt-(2,1,3-benzothiadiazole)-4,7-diyl]), PBDTTPD(poly((4,8-diethylhexyloxyl), PFDTBT(poly[2,7-(9-(2-ethylhexyl)-9-hexyl-fluorene)-alt-5,5-(4', 7, -di-2-thienyl-2',1', 3'-benzothiadiazole)]), PFO-DBT(poly[2,7-.9,9-(dioctyl-fluorene)-alt-5,5-(4',7'-di-2-.thienyl-2', 1', 3'-benzothiadiazole)]), PSiFDTBT(poly[(2,7-dioctylsilafluorene)-2,7-diyl-alt-(4,7-bis(2-thienyl)-2,1,3-benzothiadiazole)-5,5′'-diyl]), PCDTBT(Poly [[9-(1-octylnonyl)-9H-carbazole-2,7-diyl] -2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl]), PFB(poly(9,It may include one or more selected from 9′'-dioctylfluorene-co-bis(N,N′'-(4,butylphenyl))bis(N,N′'-phenyl-1,4-phenylene)diamine), F8BT(poly(9,9′'-dioctylfluorene-cobenzothiadiazole), PEDOT (poly(3,4-ethylenedioxythiophene)), PEDOT:PSS poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate), PTAA (poly(triarylamine)), 2-PACz, MeO-2PACz, Br-2PACz, Me-4PACz, MeO-4PACz, and 6-PACz.

[0092] Additionally, the electron transport layer (50) may include a fullerene-based organic material. In this case, the fullerene-based organic material may include one or more selected from C60, C70, PC60BM and PC70BM.

[0093] Additionally, as a method for forming the electron transport layer (50), a deposition process and a solution process can be performed. The deposition process can be any general deposition process used in the industry, such as a thermal evaporation process, a vacuum deposition process, an atomic layer deposition (ALD) process, a chemical vapor deposition (CVD) process, or a physical vapor deposition (PVD) process. The solution process can be any general solution process used in the industry, such as a spin coating process, a slot die coating process, a blade coating process, a printing coating process, a gravure coating process, or a spray coating process.

[0094] Additionally, the thickness of the electron transport layer (50) is not limited, but preferably has an average thickness of 3 to 300 nm, more preferably 5 to 200 nm.

[0095]

[0096] Referring to FIG. 5, the sixth step of the method for manufacturing a tandem perovskite solar cell of the present invention may print a masking paste (1', 1") on both ends of the upper part of the electron transfer layer (50).

[0097] Various printing methods used in the industry can be used to form the masking paste (1', 1"), and preferably, a screen printing process can be performed.

[0098] In addition, the masking paste (1', 1") may have a viscosity of 100 to 300 kcps (25°C), preferably 150 to 250 kcps (25°C). If the viscosity is less than 100 kcps (25°C), the light-receiving area may be reduced, and there may be a problem with the difficulty of removing it after use. If the viscosity exceeds 250 kcps (25°C), there may be a problem with the wire breaking.

[0099] Additionally, the masking paste (1', 1") may include a base resin and an inorganic filler, and may include a remainder of a solvent. In this case, any substance capable of dissolving the base resin may be used as the solvent, and preferably, it may include one or more selected from ethanol, methanol, butanol, isopropyl alcohol, ethyl acetate, methyl acetate, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetate, and terpineol.

[0100] Specifically, the masking paste (1', 1") may comprise, based on the total weight percentage, 1 to 10 weight percent of base resin, preferably 3 to 5 weight percent, 40 to 90 weight percent of inorganic filler, preferably 50 to 65 weight percent, and the remainder being a solvent. If the inorganic filler exceeds 90 weight percent, there may be a problem with not being able to form a paste, and if it is less than 40 weight percent, there may be a problem with not being able to form the masking paste (1', 1") to the desired height. Additionally, if the base resin exceeds 10 weight percent, there may be a problem with wire breakage, and if it is less than 1 weight percent, there may be a problem with not being able to bind the inorganic filler.

[0101] In addition, the base resin may include one or more selected from ethyl cellulose resin, cellulose acetate resin, cellulose acetate butyrate resin, cellulose acetate propionate resin, polyvinyl alcohol resin, polyvinyl butyral resin, nitrocellulose resin, acrylic resin, and terpene resin, and preferably may include ethyl cellulose resin.

[0102] In addition, the inorganic filler may include one or more selected from aluminum oxide (Al2O3), tantalum pentoxide (Ta2O5), silicon dioxide (SiO2), silicon nitride (Si3N4), barium titanate (BaTiO3), lead titanate (PbTiO3), yttrium oxide (Y2O3), zirconium dioxide (ZrO2), silicon monoxide (SiO), boron monoxide (BO), silver (Ag), and copper (Cu), and preferably may include aluminum oxide (Al2O3).

[0103] In addition, the inorganic filler may have an average particle size of 1 to 5 μm, preferably 2 to 3 μm. If the average particle size is less than 1 μm, there may be a problem of wire breakage, and if it exceeds 5 μm, there may be a problem of not achieving the desired masking, as well as a problem of the line width becoming excessively wide.

[0104] In addition, the masking paste (1', 1") may have a width of 30 to 300 μm, preferably 100 to 200 μm, and a height of 10 to 80 μm, preferably 20 to 60 μm. If such a width exceeds 300 μm, there may be a problem with reduced efficiency of the solar cell, and if the height is less than 10 μm, there may be a problem with difficulty in removing it after use.

[0105]

[0106] Referring to FIG. 6, the seventh step of the method for manufacturing a tandem perovskite solar cell of the present invention may form a transparent electrode (60) on top of an electron transfer layer (50) and / or a masking paste (1', 1").

[0107] The transparent electrode (60) can be formed through a deposition process. At this time, the deposition can be performed using a general deposition process used in the industry, and preferably, the deposition process can be performed using a sputtering method.

[0108] Additionally, the transparent electrode (60) may be a transparent thin film on which ITO (Indium Tin Oxide), FTO (Fluorine-doped Tin Oxide), ATO (Sb2O3-doped Tin Oxide), GTO (Gallium-doped Tin Oxide), ZTO (tin-doped zinc oxide), ZTO:Ga (gallium-doped ZTO), IGZO (Indium-gallium zinc oxide), IZO (Indium-doped zinc oxide), or AZO (Aluminum-doped zinc oxide) is deposited.

[0109] In addition, the thickness of the transparent electrode (60) is not limited, but preferably has a thickness of 50 to 200 nm, more preferably 60 to 140 nm.

[0110]

[0111] Referring to FIG. 7, the eighth step of the method for manufacturing a tandem perovskite solar cell of the present invention can remove the masking paste (1', 1") by spraying an organic solvent or water onto the masking paste (1', 1").

[0112] At this time, one or more selected from ethanol, methanol, butanol, isopropyl alcohol, ethyl acetate, methyl acetate, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetate, and terpineol may be included as organic solvents, and preferably ethanol may be included.

[0113] In addition, while removing the masking paste (1', 1"), the transparent electrode (60) formed on the upper part of the masking paste (1', 1") can also be removed together, and after removing the masking paste (1', 1"), the remaining organic solvent can be removed by heat treatment at a temperature of 80 to 150°C, preferably 110 to 120°C, for 5 to 30 minutes, preferably 5 to 10 minutes.

[0114]

[0115] Referring to FIG. 8, the ninth step of the method for manufacturing a tandem perovskite solar cell of the present invention may form a metal electrode (70) on top of a transparent electrode (60).

[0116] A metal electrode (70) can be formed by patterning a metal material on top of a transparent electrode (60). Specifically, the patterning process is largely composed of deposition, lithography, and etching. A metal electrode can be formed on top of a transparent electrode by laying a metal material in the form of a thin film on one surface of a substrate, printing a pattern by exposure, and removing the unnecessary parts. Additionally, the patterning process can be performed using a screen printing method with a metal paste containing a metal material. More specifically, the metal electrode may be composed of a plurality of bus bar electrodes arranged in a horizontal direction and a plurality of finger electrodes arranged in a vertical direction of the bus bar electrodes.

[0117] In addition, the metal material may include one or more selected from Pt, Au, Ni, Cu, Ag, In, Ru, Pd, Rh, Ir, Os, C, and conductive polymers.

[0118] In addition, the thickness of the metal electrode (70) is not limited, but preferably can have a thickness of 50 nm to 15 μm.

[0119]

[0120] Meanwhile, the method for manufacturing a tandem perovskite solar cell of the present invention may further include a 10th step.

[0121] Referring to FIG. 9, the tenth step of the method for manufacturing a tandem perovskite solar cell of the present invention may cut both ends of the upper portion of the metal electrode in a direction perpendicular to one surface of the metal electrode through an etching process. The etching process may be performed by applying various processes performed in the industry, and preferably, laser etching may be performed. Although there are no specific limitations on laser etching, it may be performed using a pulsed laser under conditions of picosecond, power of 1 to 10 W, pulse of 10 to 500 kHz, and moving speed of 50 to 150 mm / s.

[0122]

[0123] Furthermore, another method for manufacturing a tandem perovskite solar cell of the present invention includes steps 1 through 5.

[0124] The first step of another method for manufacturing a tandem perovskite solar cell of the present invention may be to prepare a laminate in which a solar cell, a recombination layer, a hole transport layer, a perovskite light absorption layer, and an electron transport layer are sequentially stacked. At this time, the solar cell, the recombination layer, the hole transport layer, the perovskite light absorption layer, and the electron transport layer are each as described above.

[0125] The second step of another manufacturing method of the tandem perovskite solar cell of the present invention may involve printing a masking paste on both ends of the upper portion of the electron transport layer. At this time, the masking paste is as described above.

[0126] The third step of another manufacturing method of the tandem perovskite solar cell of the present invention may form a transparent electrode on top of the electron transport layer and / or masking paste. At this time, the transparent electrode is as described above.

[0127] The fourth step of another method for manufacturing a tandem perovskite solar cell of the present invention may remove the masking paste by spraying an organic solvent or water onto the masking paste. At this time, the organic solvent is as described above.

[0128] The fifth step of another manufacturing method of the tandem perovskite solar cell of the present invention may form a metal electrode on top of the transparent electrode. At this time, the metal electrode is as described above.

[0129]

[0130] Meanwhile, another method for manufacturing a tandem perovskite solar cell of the present invention includes steps 1 to 5.

[0131] The first step of another method for manufacturing a tandem perovskite solar cell of the present invention may be to prepare a solar cell. At this time, the solar cell is as described above.

[0132] The second step of another manufacturing method of the tandem perovskite solar cell of the present invention may involve printing a masking paste on both ends of the upper part of the solar cell. At this time, the masking paste is as described above.

[0133] The third step of another manufacturing method of the tandem perovskite solar cell of the present invention may form a recombination layer on top of the solar cell and the masking paste. At this time, the recombination layer is as described above.

[0134] The fourth step of another method for manufacturing a tandem perovskite solar cell of the present invention may remove the masking paste by spraying an organic solvent or water onto the masking paste. At this time, the organic solvent is as described above.

[0135] The fifth step of another manufacturing method of the tandem perovskite solar cell of the present invention may sequentially form a hole transport layer, a perovskite light absorption layer, an electron transport layer, a transparent electrode, and a metal electrode on top of the recombination layer. At this time, the hole transport layer, the perovskite light absorption layer, the electron transport layer, the transparent electrode, and the metal electrode are each as described above.

[0136]

[0137] Furthermore, the tandem perovskite solar cell of the present invention may be manufactured by the method for manufacturing the tandem perovskite solar cell of the present invention described above.

[0138]

[0139] The present invention will be explained in more detail below through examples, but the following examples are not intended to limit the scope of the invention and should be interpreted as being for the purpose of aiding understanding of the invention.

[0140]

[0141] Preparation Example 1: Preparation of Masking Paste

[0142] A masking paste having a viscosity of 200 kcps (25°C) was prepared by mixing 3% by weight of base resin, 60% by weight of inorganic filler, and the remainder of solvent based on the total weight%. At this time, ethyl cellulose resin was used as the base resin, aluminum oxide (Al2O3) with an average particle size of 2.5 μm was used as the inorganic filler, and diethylene glycol monobutyl ether was used as the solvent.

[0143]

[0144] Example 1: Preparation of a tandem silicon / perovskite heterojunction solar cell

[0145] (1) A silicon solar cell (thickness: 180 μm) doped with n or p-type impurities was prepared, and the SiOx oxide film was removed by treating it with hydrofluoric acid, and then the remaining hydrofluoric acid was removed using ultrapure water.

[0146] (2) The masking paste prepared in Preparation Example 1 was printed on both ends of the upper portion of the silicon solar cell from which the oxide film had been removed through a screen printing process. At this time, the masking paste was printed on each end to have a width of 150 μm and a height of 40 μm.

[0147] (3) A 20 nm thick recombination layer (ITO) was formed on a silicon solar cell with the oxide film removed and a masking paste through a sputtering process.

[0148] (4) The masking paste was removed by spraying an organic solvent onto the masking paste using a high-pressure spray device, and the remaining organic solvent was removed by heat treatment at 120°C for 5 minutes. At this time, ethanol was used as the organic solvent.

[0149] (5) A 20 nm thick nickel oxide (NiOx) was deposited on the recombining layer by sputtering vacuum deposition, and a 5 nm thick Me-4PACz was coated on the deposited nickel oxide by spin coating to form a hole transport layer.

[0150] (6) A yellow light-absorbing layer solution formed by dissolving in dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) on top of a hole transport layer is formed by spin coating, and a perovskite light-absorbing layer (CSFAPbI) having a 400 nm thick perovskite crystal structure is formed by heat treatment at 150°C for 10 minutes. x Br 3-X (0 ≤ x ≤ 3)) was formed.

[0151] (7) An electron transport layer (SnO2) with an average thickness of 10 nm was formed on top of the perovskite light absorption layer through an atomic layer deposition (ALD) process.

[0152] (8) The masking paste prepared in Preparation Example 1 was printed on both ends of the upper electron transport layer through a screen printing process. At this time, the masking paste was printed on each end with a width of 150 μm and a height of 40 μm.

[0153] (9) A transparent electrode (IZO) with a thickness of 75 nm was formed on top of the electron transport layer and masking paste through a sputtering process.

[0154] (10) The masking paste was removed by spraying an organic solvent onto the masking paste using a high-pressure spray device, and the remaining organic solvent was removed by heat treatment at 120°C for 5 minutes. At this time, ethanol was used as the organic solvent.

[0155] (11) Silver (Ag) is printed on the top of the transparent electrode through a screen printing process, 1 10 -7 A metal electrode was formed by depositing a thickness of 100 nm at a pressure of torr.

[0156] (12) By cutting both ends of the upper portion of the metal electrode in a direction perpendicular to one surface of the metal electrode through laser etching, a silicon solar cell, a recombination layer, a hole transport layer, a perovskite light absorption layer, an electron transport layer, a transparent electrode, and a metal electrode were sequentially stacked to form a tandem silicon / perovskite heterojunction solar cell. At this time, the laser etching was performed using a pulsed laser under conditions of picosecond, power 5W, pulse 100kHz, and moving speed 100mm / s.

[0157]

[0158] Example 2: Preparation of a Tandem Silicon / Perovskite Heterojunction Solar Cell

[0159] (1) A silicon solar cell (thickness: 180 μm) doped with n or p-type impurities was prepared, and the SiOx oxide film was removed by treating it with hydrofluoric acid, and then the remaining hydrofluoric acid was removed using ultrapure water.

[0160] (2) A 20 nm thick recombination layer (ITO) was formed on top of a silicon solar cell from which the oxide film had been removed through a sputtering process.

[0161] (3) A 20 nm thick nickel oxide (NiOx) was deposited on the recombining layer by sputtering vacuum deposition, and a 5 nm thick Me-4PACz was coated on the deposited nickel oxide by spin coating to form a hole transport layer.

[0162] (4) A yellow light-absorbing layer solution formed by dissolving in dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) on top of a hole transport layer is formed by spin coating, and a perovskite light-absorbing layer (CSFAPbI) having a 400 nm thick perovskite crystal structure is formed by heat treatment at 150°C for 10 minutes. x Br 3-X (0 ≤ x ≤ 3)) was formed.

[0163] (5) An electron transport layer (SnO2) with an average thickness of 10 nm was formed on top of the perovskite light absorption layer through an atomic layer deposition (ALD) process.

[0164] (6) The masking paste prepared in Preparation Example 1 was printed on both ends of the upper electron transport layer through a screen printing process. At this time, the masking paste was printed on each end with a width of 150 μm and a height of 40 μm.

[0165] (7) A transparent electrode (IZO) with a thickness of 75 nm was formed on top of the electron transport layer and masking paste through a sputtering process.

[0166] (8) The masking paste was removed by spraying an organic solvent onto the masking paste using a high-pressure spray device, and the remaining organic solvent was removed by heat treatment at 120°C for 5 minutes. At this time, ethanol was used as the organic solvent.

[0167] (9) Silver (Ag) is printed on the top of the transparent electrode through a screen printing process, 1 10 -7 A metal electrode was formed by depositing a thickness of 100 nm at a pressure of torr.

[0168] (10) By cutting both ends of the upper portion of the metal electrode in a direction perpendicular to one surface of the metal electrode through laser etching, a silicon solar cell, a recombination layer, a hole transport layer, a perovskite light absorption layer, an electron transport layer, a transparent electrode, and a metal electrode were sequentially stacked to form a tandem silicon / perovskite heterojunction solar cell. At this time, the laser etching was performed using a pulsed laser under conditions of picosecond, power 5W, pulse 100kHz, and moving speed 100mm / s.

[0169]

[0170] Example 3: Preparation of a Tandem Silicon / Perovskite Heterojunction Solar Cell

[0171] (1) A silicon solar cell (thickness: 180 μm) doped with n or p-type impurities was prepared, and the SiOx oxide film was removed by treating it with hydrofluoric acid, and then the remaining hydrofluoric acid was removed using ultrapure water.

[0172] (2) The masking paste prepared in Preparation Example 1 was printed on both ends of the upper portion of the silicon solar cell from which the oxide film had been removed through a screen printing process. At this time, the masking paste was printed on each end to have a width of 150 μm and a height of 40 μm.

[0173] (3) A 20 nm thick recombination layer (ITO) was formed on a silicon solar cell with the oxide film removed and a masking paste through a sputtering process.

[0174] (4) The masking paste was removed by spraying an organic solvent onto the masking paste using a high-pressure spray device, and the remaining organic solvent was removed by heat treatment at 120°C for 5 minutes. At this time, ethanol was used as the organic solvent.

[0175] (5) A 20 nm thick nickel oxide (NiOx) was deposited on the recombining layer by sputtering vacuum deposition, and a 5 nm thick Me-4PACz was coated on the deposited nickel oxide by spin coating to form a hole transport layer.

[0176] (6) A yellow light-absorbing layer solution formed by dissolving in dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) on top of a hole transport layer is formed by spin coating, and a perovskite light-absorbing layer (CSFAPbI) having a 400 nm thick perovskite crystal structure is formed by heat treatment at 150°C for 10 minutes. x Br 3-X (0 ≤ x ≤ 3)) was formed.

[0177] (7) An electron transport layer (SnO2) with an average thickness of 10 nm was formed on top of the perovskite light absorption layer through an atomic layer deposition (ALD) process.

[0178] (8) A transparent electrode (IZO) with a thickness of 75 nm was formed on top of the electron transport layer through a sputtering process.

[0179] (9) Silver (Ag) is printed on the top of the transparent electrode through a screen printing process, 1 10 -7 A metal electrode was formed by depositing a thickness of 100 nm at a pressure of torr.

[0180] (10) By cutting both ends of the upper portion of the metal electrode in a direction perpendicular to one surface of the metal electrode through laser etching, a silicon solar cell, a recombination layer, a hole transport layer, a perovskite light absorption layer, an electron transport layer, a transparent electrode, and a metal electrode were sequentially stacked to form a tandem silicon / perovskite heterojunction solar cell. At this time, the laser etching was performed using a pulsed laser under conditions of picosecond, power 5W, pulse 100kHz, and moving speed 100mm / s.

[0181]

[0182] Comparative Example 1: Preparation of a tandem silicon / perovskite heterojunction solar cell

[0183] (1) A silicon solar cell (thickness: 180 μm) doped with n or p-type impurities was prepared, and the SiOx oxide film was removed by treating it with hydrofluoric acid, and then the remaining hydrofluoric acid was removed using ultrapure water.

[0184] (2) A 20 nm thick recombination layer (ITO) was formed on top of a silicon solar cell from which the oxide film had been removed through a sputtering process.

[0185] (3) A 20 nm thick nickel oxide (NiOx) was deposited on the recombining layer by sputtering vacuum deposition, and a 5 nm thick Me-4PACz was coated on the deposited nickel oxide by spin coating to form a hole transport layer.

[0186] (4) A yellow light-absorbing layer solution formed by dissolving in dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) on top of a hole transport layer is formed by spin coating, and a perovskite light-absorbing layer (CSFAPbI) having a 400 nm thick perovskite crystal structure is formed by heat treatment at 150°C for 10 minutes. x Br 3-X (0 ≤ x ≤ 3)) was formed.

[0187] (5) An electron transport layer (SnO2) with an average thickness of 10 nm was formed on top of the perovskite light absorption layer through an atomic layer deposition (ALD) process.

[0188] (6) A transparent electrode (IZO) with a thickness of 75 nm was formed on top of the electron transport layer through a sputtering process.

[0189] (7) Silver (Ag) is applied to the top of the transparent electrode through a screen printing process, 1 10 -7 A metal electrode was formed by depositing a thickness of 100 nm at a pressure of torr.

[0190] (8) By cutting both ends of the upper portion of the metal electrode in a direction perpendicular to one surface of the metal electrode through laser etching, a silicon solar cell, a recombination layer, a hole transport layer, a perovskite light absorption layer, an electron transport layer, a transparent electrode, and a metal electrode were sequentially stacked to form a tandem silicon / perovskite heterojunction solar cell. At this time, the laser etching was performed using a pulsed laser under conditions of picosecond, power 5W, pulse 100kHz, and moving speed 100mm / s.

[0191]

[0192] Experimental Example 1: Measurement of Solar Cell Performance

[0193] For each of the tandem silicon / perovskite heterojunction solar cells prepared in Examples 1 to 3 and Comparative Example 1, the efficiency was measured using a photovoltaic simulation device and a JV Keithley device, and the initial JV curve was used and is shown in Table 1 below.

[0194]

[0195] As can be seen in Table 1, it was confirmed that the tandem silicon / perovskite heterojunction solar cells prepared in Examples 1 to 3 had superior power conversion efficiency compared to the tandem silicon / perovskite heterojunction solar cell prepared in Comparative Example 1. In addition, among the tandem silicon / perovskite heterojunction solar cells prepared in Examples 1 to 3, it was confirmed that the tandem silicon / perovskite heterojunction solar cell prepared in Example 1 had the best power conversion efficiency.

[0196]

[0197] Specific embodiments have been illustrated and described above. However, the invention is not limited to the aforementioned embodiments, and those skilled in the art may make various modifications without departing from the essence of the technical concept of the invention as described in the following claims.

Claims

1. Step 1 of preparing the solar cell; A second step of printing masking paste on both ends of the upper part of the solar cell; A third step of forming a recombination layer on top of the solar cell and masking paste; A fourth step of removing the masking paste by spraying an organic solvent or water onto the masking paste; A fifth step of sequentially forming a hole transport layer, a perovskite light absorption layer, and an electron transport layer on top of the above recombination layer; Step 6: Printing masking paste on both ends of the upper portion of the electron transport layer; Step 7, forming a transparent electrode on the electron transfer layer and masking paste above; Step 8, removing the masking paste by spraying an organic solvent or water onto the masking paste; and Step 9, forming a metal electrode on top of the transparent electrode; A method for manufacturing a tandem perovskite solar cell comprising 2. A first step of preparing a laminate in which a solar cell, a recombination layer, a hole transport layer, a perovskite light absorption layer, and an electron transport layer are sequentially stacked; A second step of printing masking paste on both ends of the upper part of the electron transport layer; A third step of forming a transparent electrode on top of the electron transfer layer and masking paste; A fourth step of removing the masking paste by spraying an organic solvent or water onto the masking paste; and Step 5: forming a metal electrode on top of the transparent electrode; A method for manufacturing a tandem perovskite solar cell comprising 3. Step 1 of preparing the solar cell; A second step of printing masking paste on both ends of the upper part of the solar cell; A third step of forming a recombination layer on top of the solar cell and masking paste; A fourth step of removing the masking paste by spraying an organic solvent or water onto the masking paste; and A fifth step of sequentially forming a hole transport layer, a perovskite light absorption layer, an electron transport layer, a transparent electrode, and a metal electrode on the above recombination layer; A method for manufacturing a tandem perovskite solar cell comprising 4. In any one of paragraphs 1 through 3, A method for manufacturing a tandem perovskite solar cell, wherein the above masking paste comprises a base resin and an inorganic filler and has a viscosity of 100 to 300 kcps (25°C).

5. In Paragraph 4, A method for manufacturing a tandem perovskite solar cell, wherein the masking paste comprises 1 to 10 weight percent of a base resin and 40 to 90 weight percent of an inorganic filler based on the total weight percent.

6. In Paragraph 4, A method for manufacturing a tandem perovskite solar cell, wherein the base resin comprises one or more selected from ethyl cellulose resin, cellulose acetate resin, cellulose acetate butyrate resin, cellulose acetate propionate resin, polyvinyl alcohol resin, polyvinyl butyral resin, nitrocellulose resin, acrylic resin, and terpene resin.

7. In Paragraph 4, A method for manufacturing a tandem perovskite solar cell, wherein the above-mentioned inorganic filler comprises one or more selected from aluminum oxide (Al2O3), tantalum pentoxide (Ta2O5), silicon dioxide (SiO2), silicon nitride (Si3N4), barium titanate (BaTiO3), lead titanate (PbTiO3), yttrium oxide (Y2O3), zirconium dioxide (ZrO2), silicon monoxide (SiO), boron monoxide (BO), silver (Ag), and copper (Cu).

8. In Paragraph 7, A method for manufacturing a tandem perovskite solar cell, wherein the above-mentioned inorganic filler has an average particle size of 1 to 5 μm.

9. In any one of paragraphs 1 through 3, A method for manufacturing a tandem perovskite solar cell, wherein the above organic solvent comprises one or more selected from ethanol, methanol, butanol, isopropyl alcohol, ethyl acetate, methyl acetate, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetate, and terpineol.

10. In any one of paragraphs 1 through 3, A method for manufacturing a tandem perovskite solar cell, wherein the above masking paste has a width of 30 to 300 μm and a height of 10 to 80 μm.

11. In any one of paragraphs 1 through 3, A method for manufacturing a tandem perovskite solar cell, wherein the solar cell of the first step is a polycrystalline silicon solar cell, a crystalline silicon solar cell, a perovskite solar cell, a gallium arsenide (GaAs) solar cell, a cadmium telluride (CdTe) solar cell, a CIGS (CuInGaSe) solar cell, a CZTS (Cu2ZnSnS4) solar cell, an organic solar cell, a dye-sensitized solar cell, or a group 3-5 compound solar cell.

12. In any one of paragraphs 1 through 3, A method for manufacturing a tandem perovskite solar cell, wherein the perovskite light-absorbing layer comprises a perovskite material represented by the following chemical formula 1. [Chemical Formula 1] CMX3 In the above chemical formula 1, C is a monovalent cation, M is a divalent cation, and X is a monovalent anion.

13. A tandem perovskite solar cell manufactured by the manufacturing method of any one of paragraphs 1 to 3.

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