Solar-control glazing comprising a layer of titanium nitride

ZA202207443BActive Publication Date: 2026-08-26SAINT GOBAIN VITRAGE SA
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Patent Information

Application Number
ZA202207443
Authority / Receiving Office
ZA · ZA
Patent Type
Patents
Current Assignee / Owner
Priority Date
2020-02-28
Filing Date
2022-07-05
Publication Date
2026-08-26
Estimated Expiration
2041-02-25

AI Technical Summary

Technical Problem

Current solar control glazing technologies face challenges in achieving a balance between high light transmission and low emissivity while maintaining durability and resistance to humidity and chemical attacks, particularly when used as single glazing without silver-based layers.

Method used

A stack of layers comprising a dielectric module, a titanium nitride layer, and an optional intermediate layer of silicon, aluminum, or titanium, deposited using magnetron sputtering techniques, which enhances light transmission and reduces normal emissivity, improving the selectivity and thermal insulation properties of the glazing.

Benefits of technology

The solution achieves high light transmission (>30%) with low normal emissivity (<50%) and improved selectivity, while maintaining durability and resistance to humidity and chemical attacks, allowing for effective thermal insulation and solar protection without the need for silver-based layers.

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Abstract

Glass article with sunscreen properties comprising at least one glass substrate provided with a stack of layers, in which the stack successively comprises, from the surface of the substrate: - a first module M1 consisting of a layer based on a dielectric material having a thickness e 1 <sb / > or of a set of layers based on materials - a layer TN1 comprising titanium nitride and preferably based on titanium nitride, having a thickness of between 2 nanometers and 80 nanometers, - a second module M2 consisting of a layer based on a dielectric material having a thickness e 2 or of a set of layers based on dielectric materials having a cumulative thickness e 2 , - an intermediate layer comprising at least one element chosen from silicon, aluminium, titanium or a mixture of at least two of said elements being deposited between the layer TN1 and the first module M1 and / or between the layer TN1 and the second module M2, the intermediate layer(s) having a thickness of between 0.2 nm and 6 nm.
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Description

[0001] DESCRIPTION

[0002] TITLE: SOLAR CONTROL GLAZING COMPRISING A TITANIUM NITRID COATING

[0003] The invention relates to insulating glass units, also known as solar control glazing, equipped with stacks of thin, functional layers, that is to say, layers that act on solar and / or thermal radiation primarily by reflecting and / or absorbing near-infrared (solar) or far-infrared (thermal) radiation. The primary application targeted by the invention is in the building sector, as solar control glazing. Without departing from the scope of the invention, this glazing can also be used in vehicle glazing, such as side windows, roofs, and rear windows.

[0004] For the purposes of this invention, glazing means any glass product consisting of one or more glass substrates, in particular single glazing, double glazing, triple glazing, etc.

[0005] For the purposes of this application, a "functional" or "active" layer refers to the layers of the stack that provide the stack with most of its thermal insulation properties. Thin-film stacks used in glazing most often provide significantly improved insulation properties primarily due to the intrinsic properties of these active layers. These layers act on the flow of thermal infrared radiation passing through the glazing, unlike other layers, which are generally made of dielectric material and whose main function is usually to provide chemical or mechanical protection to the functional layers. A dielectric material is defined as a material whose bulk form, free from impurities or dopants, exhibits high resistivity, specifically an initial resistivity greater than 10 Ω·m. 10 ohms. meters (W.m) at room temperature (300K).

[0006] Such glazings equipped with stacks of thin films act on the incident IR radiation either essentially by the absorption of said radiation by the functional layer(s), or essentially by reflection by these same layers.

[0007] They are grouped under the designation of solar control glazing. They are marketed and used primarily: - either to provide protection for the dwelling from solar radiation or for the passenger compartment (automobile) and prevent overheating, such glazing being referred to in the trade as anti-insulating,

[0008] - either essentially to ensure thermal insulation of the dwelling and prevent heat loss, these windows being classified as insulating windows.

[0009] By antisolar, we mean in the sense of the present invention the ability of the glazing to limit the energy flow, in particular solar infrared radiation (1RS) passing through it from the outside to the inside of the dwelling or the living space.

[0010] Thermal insulation refers to glazing with at least one functional layer that reduces energy loss. This layer has an IR radiation reflection coefficient between 5 and 50 micrometers. The functional layers used for this purpose have a high IR radiation reflection coefficient and are called low-emissivity (or low-e). In some countries, standards require that glazing for buildings have both solar control and thermal insulation properties. Low-emissivity refers to glazing with at least one functional layer that gives it normal emissivity. n(or total emissivity at normal incidence) less than 50%, preferably less than 45% or even less than 40%, emissivity being defined by the relation: n = 1 - Rn, in which R n is the reflection factor according to the normal (according to Annex A of the international standard ISO 10292 (1994)) of the glazing.

[0011] The concept of low-emissivity glazing is described in particular in the reference article of Techniques De l'Ingénieur: "Glazing with reinforced thermal insulation", C3635 (1999).

[0012] In general, all energy characteristics presented in this description are obtained according to the principles and methods described in the international standard ISO 10292 (1994), relating to the determination of the energy insulation characteristics of glazing used in glass for construction.

[0013] These coatings are typically applied using CVD (Chemical Vapor Deposition) techniques for the simplest applications, or more commonly nowadays using vacuum spray deposition techniques, often referred to as magnetron sputtering in the field, particularly when the coating consists of a complex stack of successive layers with thicknesses of only a few nanometers or tens of nanometers. Most often, these thin-film stacks exhibit solar control properties primarily due to the intrinsic properties of one or more active layers, referred to as functional layers in this description. An active or functional layer is thus understood to be a layer that significantly influences the flow of solar radiation passing through the glazing.Such an active layer, as is known, can function either primarily by reflecting incident infrared radiation or primarily by absorbing said infrared radiation. Most often, these solar control layers function partly by reflection and partly by absorption, as previously explained. In particular, the highest-performing stacks currently on the market incorporate at least one metallic functional layer, such as silver, which functions primarily by reflecting a large portion of the incident IR (infrared) radiation. Their normal emissivity does not exceed a few percent. These stacks are thus mainly used as low-emissivity (or low-e) glazing for the thermal insulation of buildings.These layers are, however, sensitive to humidity and are therefore used exclusively in double glazing, on surface 2 or 3, to protect them from moisture. The stacks according to the invention do not include such silver-type layers, or gold or platinum-type layers, or only in very negligible quantities, particularly in the form of unavoidable impurities.

[0014] Other metallic coatings with solar protection functions have also been reported in the field, including functional coatings of the Nb, Ta, or W type, or nitrides of these metals, as described, for example, in application W001 / 21540. Within such coatings, solar radiation is predominantly absorbed non-selectively by the functional coating(s); that is, both infrared radiation (i.e., with wavelengths between approximately 780 nm and 2500 nm) and visible radiation (with wavelengths between approximately 380 and 780 nm) are absorbed / reflected indiscriminately. In such glazing, the normal emissivity values nare generally higher. Lower emissivity values ​​can only be obtained when the functional layer is relatively thick, particularly at least 20 nm for metallic niobium. Due to the non-selective absorption of this same layer, the light transmission coefficients of such glazing are necessarily very low, generally less than 30%. Ultimately, given these characteristics, it does not appear possible to obtain solar control glazing from such stacks that combines relatively low normal emissivities, typically less than 50%, and especially on the order of 40% or even 35%, while maintaining sufficiently high light transmission, that is to say, typically greater than 30%.

[0015] The luminous characteristics, and in particular the light transmission, are measured according to the present invention in accordance with the principles described in standard NF EN410 (2011). In other publications, it has been proposed to use a titanium nitride (TiN)-based material as a functional layer, which also exhibits low-emissivity properties and is less prone to corrosion than silver-based layers. Notable examples include publications DE102014114330, DE102013112990, and JPH05124839. The object of the present invention relates to solar control glazing incorporating stacks comprising such layers and aims more particularly to improve their properties, and more specifically the combined properties of high light transmission and low emissivity of such glazing.

[0016] The aim of the present invention is thus to provide glazing comprising a stack of layers giving it solar control properties as previously described, while exhibiting a light transmission TL typically greater than 30%, preferably greater than or equal to 40%, or even greater than or equal to 50%, and a normal emissivity n low, that is to say less than 50%, or even less than 45% or even less than 40%, the said stacking being durable over time, in particular when it is placed directly on a face of the glazing exposed towards the inside or even the outside of the building or the passenger compartment, without special precautions.

[0017] In the context of the present invention, glazing with the highest possible Tί / e ratio is sought, i.e., glazing with improved selectivity. Glazing in the context of the present invention therefore allows a major portion of light to pass through in the visible spectrum while reflecting a major portion of near-IR radiation after heat treatment such as tempering, bending, annealing, etc. Thus, the present invention makes it possible to obtain solar control glazing capable of undergoing heat treatment such as tempering, bending, or more generally, heat treatment at temperatures above 500°C, said treatment making it possible in particular to improve the optical and energy properties of the glazing, and in particular its selectivity.A glazing unit according to the invention also allows for the selection of radiation passing through it, favoring the transmission of light waves, i.e., those with wavelengths between approximately 380 and 780 nm, and limiting the transmission of infrared radiation, which has wavelengths greater than 780 nm. According to the invention, it thus becomes possible to maintain strong illumination of the room or passenger compartment protected by the glazing, while minimizing the amount of heat entering it.

[0018] According to another aspect, the glazing according to the present invention also exhibits thermal insulation properties thanks to the low-emissivity properties of the layer used, making it possible to limit heat exchange between the inside and outside of the building.

[0019] According to another advantage of the present invention, glazings equipped with stacks according to the invention are simple to produce, compared to other known glazings with anti-solar properties, in particular those comprising a silver-based stack.

[0020] Furthermore, they are resistant to moisture, scratches, and acid attacks. In particular, the glazing according to the invention exhibits improved longevity, in that its initial thermal or solar insulation properties vary only very slightly under the chemical stresses to which it is subjected during its intended use.

[0021] They can thus be advantageously used as single glazing (a single glass substrate), with the stack preferably facing the inner face of the building or the space to be protected. More particularly, the present invention relates to a glass article with solar control properties comprising at least one glass substrate provided with a stack of layers, in which the stack comprises, and preferably consists of, successively from the surface of said substrate:

[0022] - a first module Mi consisting of a layer based on a dielectric material of thickness ei or of a set of layers based on dielectric materials with a cumulative thickness ei between 1 and 100 nm,

[0023] - a TNi layer comprising titanium nitride, preferably titanium nitride-based, or even essentially composed of titanium nitride, with a thickness between 2 nanometers and 80 nanometers, preferably between 4 and 70 nanometers, preferably also between 10 and 50 nm,

[0024] - a second module M2 consisting of a layer based on a dielectric material of thickness e2 or of a set of layers based on dielectric materials of cumulative thickness e å between 1 and 100 nm,

[0025] - possibly a protective layer comprising, or preferably based on, titanium oxide, zirconium oxide, or titanium and zirconium oxide,

[0026] According to the invention, the stack further comprises an intermediate layer comprising, and preferably consisting essentially of, or even is consisting of, at least one element selected from silicon, aluminum, titanium or a mixture of at least two of these elements, said intermediate layer being deposited between said layer TN1 and said first module M1 and / or between said layer TNi and said second module M2, said intermediate layer(s) being of a thickness between 0.2 nm and 6 nm, preferably between 0.5 and 5 nm, preferably again between 1 and 4 nm.

[0027] According to preferred embodiments of the present invention, which can obviously be combined with each other as appropriate:

[0028] - The element deposited to constitute the intermediate layer(s) is essentially aluminum. According to this method, a layer consisting essentially, or even made entirely, of aluminum is therefore deposited between said TNi layer and said first module M1 and / or said second module M2 to form said intermediate layer (in particular by magnetron-assisted sputtering of an aluminum target under an atmosphere of a neutral gas such as argon).

[0029] - The element deposited to constitute the intermediate layer(s) is essentially silicon. According to this method, a layer consisting essentially, or even entirely, of silicon is therefore deposited between the TNi layer and the first module Mi and / or the second module M2 to form the intermediate layer (in particular by magnetron-assisted sputtering of a silicon target under an atmosphere of a neutral gas such as argon). - The element deposited to constitute the intermediate layer(s) is essentially titanium. According to this method, a layer consisting essentially, or even entirely, of titanium is therefore deposited between the TNi layer and the first module M1 and / or the second module M2 to form the intermediate layer (in particular by magnetron-assisted sputtering of a titanium target under an atmosphere of a neutral gas such as argon).Preferably, titanium is deposited at least between said layer TN1 and said second module M2 to form said intermediate layer. In another method, a titanium layer is deposited between said layer TN1 and said first module M1 and a titanium layer is deposited between said layer TN1 and said second module M2 to form two intermediate layers, on either side of the layer TNi.

[0030] The deposited element used to form the intermediate layer(s) is essentially a mixture of aluminum and silicon. According to this method, a layer consisting essentially of, or even entirely of, aluminum and silicon is deposited between the TN1 layer and the first module M1 and / or the second module M2 to form the intermediate layer (notably by magnetron-assisted sputtering of a silicon target under an atmosphere of a neutral gas such as argon). According to this method, the Si / Al mass ratio can vary between 99:1 and 1:99. In particular, it can range from 97:35 to 75:25, and especially from 95:5 to 80:20.

[0031] The elements deposited to form the intermediate layer(s) are silicon and titanium. According to this method, a mixture consisting essentially of silicon and titanium is deposited between the TN1 layer and the first module M1 and / or the second module M2 to form the intermediate layer (notably by magnetron-assisted sputtering of a target comprising a silicon-titanium mixture under an atmosphere of a neutral gas such as argon). According to this method, the Si / Ti mass ratio can vary between 99:1 and 1:99. In particular, it can range from 97:35 to 75:25, and especially from 95:5 to 80:20.

[0032] The elements deposited to form the intermediate layer(s) are aluminum and titanium. According to this method, a mixture consisting primarily of aluminum and titanium is deposited between the TNi layer and the first module Mi and / or the second module M2 to form the intermediate layer (notably by magnetron-assisted sputtering of a target containing an aluminum-titanium mixture under an atmosphere of a neutral gas such as argon). According to this method, the Al / Ti mass ratio can vary between 99:1 and 1:99. In particular, it can range from 97:35 to 75:25, and especially from 95:5 to 80:20.

[0033] The layers based on dielectric materials constituting the set of layers of cumulative thickness ei are deposited successively and in contact with each other.

[0034] The layers based on dielectric materials constituting the set of layers of cumulative thickness e åare deposited successively and in contact with each other.

[0035] The TN1 layer and the intermediate layer(s) is / are in contact with each other.

[0036] The Mi module, the TN1 layer, the M2 module and the intermediate layer(s) are deposited successively and in contact with each other.

[0037] Modules M1 and M2 comprise, and preferably are made of, materials selected from silicon nitride, aluminum nitride, aluminum-silicon nitride, tin oxide, mixed zinc-tin oxide, silicon oxide, titanium oxide, silicon oxynitride, aluminum oxynitride, or aluminum-silicon oxynitride. Preferably, module(s) M1 and M2 are made of materials selected from silicon nitride, aluminum-silicon nitride, silicon oxynitride, or aluminum-silicon oxynitride. The first module M1 comprises, and preferably consists of, a layer comprising silicon nitride or silicon-aluminum nitride, said layer comprising silicon nitride or silicon-aluminum nitride preferably still being in contact with said intermediate layer.

[0038] - The second module M2 comprises and preferably consists of a layer comprising silicon nitride or silicon and aluminium nitride, said layer comprising silicon nitride or silicon and aluminium nitride preferably still being in contact with said intermediate layer.

[0039] - At least one of the modules M1 or M2 comprises or is made up of a layer comprising and preferably made up of silicon and / or aluminum oxynitride, said layer comprising silicon and / or aluminum oxynitride preferably being in contact with said intermediate layer.

[0040] - The refractive index at 550nm of said silicon and / or aluminium oxynitride is between 1.60 and 1.99, preferably between 1.70 and 1.95. Said index can in particular be adjusted according to the N / O ratio in said material.

[0041] - The stack comprises and preferably consists of the following sequence of layers, from the surface of the substrate: a silicon nitride or silicon oxynitride-based layer (further possibly comprising aluminium), said intermediate layer comprising at least one element selected from silicon, aluminium, titanium, or a mixture of at least two of these elements, said TN1 layer, possibly a second intermediate layer comprising at least one element selected from silicon, aluminium, titanium, or a mixture of at least two of these elements, a silicon nitride-based layer or a silicon oxynitride-based layer (further possibly comprising aluminium), and possibly a protective layer in particular selected from titanium oxides, zirconium oxides or a mixture of titanium and zirconium oxides.

[0042] - The stack comprises and preferably consists of the following sequence of layers, from the surface of the substrate: a silicon nitride or silicon oxynitride-based layer (further possibly comprising aluminium), possibly another intermediate layer comprising at least one element selected from silicon, aluminium, titanium, or a mixture of at least two of these elements, said TNi layer, said intermediate layer comprising at least one element selected from silicon, aluminium, titanium, or a mixture of at least two of these elements, a silicon nitride-based layer or a silicon oxynitride-based layer (further possibly comprising aluminium), and possibly a protective layer in particular selected from titanium oxides, zirconium oxides or a mixture of titanium and zirconium oxides.

[0043] - Said stacking comprises, starting from the surface of the substrate, the following succession of layers, each layer being successively in contact with the next:

[0044] SiNx or SiON / Al, Si or Ti or SiAI / TiN x / optionally Al, Si, Ti or SiAI / SiNx OR SiON, or

[0045] SiNx or SiON / optionally Al, Si or Ti or SiAI / TiN x / Al, Si, Ti or SiAI / SiNx or SiON, in which

[0046] - SiNx is a layer comprising or based on silicon nitride,

[0047] - SiON is a layer comprising or based on silicon oxynitride,

[0048] - Al, Si or ASi is a layer obtained respectively by depositing aluminium, silicon or a mixture of aluminium and silicon,

[0049] - TiNx is the TNi layer comprising or based on titanium nitride.

[0050] - The stack comprises a plurality of layers comprising titanium nitride TNi, TN2..., in particular two layers (TN1 and TN2) comprising titanium nitride, each layer comprising titanium nitride being separated from the next in the stack by a layer based on a dielectric material or by a set of layers based on dielectric materials and possibly an intermediate layer comprising at least one element selected from silicon, aluminum, titanium and their mixtures.

[0051] - The stack does not contain any silver, platinum, gold, or copper-based layers. - The glass substrate is clear glass. Without departing from the scope of the invention, it may also be considered to deposit the stack on a substrate of tinted or colored glass. By colored throughout, we mean that the substrate includes in its glass composition elements intended to give it a color (i.e., different from that of so-called "clear" glass), in particular elements such as cobalt, iron, selenium, or even chromium, which may also aim to reduce its light transmission.

[0052] - The glass substrate equipped with said stack has undergone heat treatment after the deposition of said stack, in particular is quenched, annealed or curved.

[0053] - The thickness ei of the first module Mi is between 1 nm and 100 nanometers inclusive, and in particular between 10 and 70 nm inclusive.

[0054] - The thickness e å of the second module M2 is between 5 nm and 100 nanometers inclusive, and in particular between 20 and 70 nm inclusive.

[0055] - The glass article comprises two glass substrates joined by a thermoplastic sheet, in particular made of polyvinyl butyral PVB, at least one of said substrates being provided with said stack of layers, said stack being preferably arranged on a face of a substrate turned towards the inside of said glazing, or in contact with the thermoplastic sheet.

[0056] Preferably, the functional layers according to the invention are based on titanium nitride or, even more preferably, are made essentially of titanium nitride.

[0057] A layer based on titanium nitride (or another material) comprises, for example, at least 50% by weight of titanium nitride (or said other material), or even more than 60% by weight of titanium nitride (or said other material), or even more than 80% by weight (or said other material), or even more than 90% by weight of titanium nitride (or other of said material).

[0058] The titanium nitride according to the invention is not necessarily stoichiometric (Ti / N atomic ratio of 1) but can be over- or under-stoichiometric. Advantageously, the N / Ti ratio is between 1 and 1.2. Furthermore, the titanium nitride according to the invention can comprise a minor amount of oxygen, for example between 1 and 10 mol% oxygen, in particular between 1 and 5 mol% oxygen.

[0059] According to a particularly preferred mode, the titanium nitride layers according to the invention conform to the general formula TiN x O y, in which 1.00 < x < 1.20 and in which 0.01 < y < 0.10.

[0060] Dielectric materials, once deposited in thin films, may, however, include additional elements that significantly increase their electrical conductivity, useful, for example, for improving the sputtering efficiency of the precursor material constituting the magnetron target. The dielectric layers of the M1 and M2 modules according to the invention may be based on a material selected from silicon nitride, aluminum nitride, tin oxide, a mixed zinc or tin oxide, silicon oxide, titanium oxide, or silicon oxynitride; preferably, the M1 and M2 modules consist of a single layer, and this layer is based on silicon nitride.A material based on silicon nitride, tin oxide, mixed zinc-tin oxide, silicon oxide, titanium oxide, or silicon oxynitride is, for example, a material consisting mainly, and preferably essentially, of such a compound, but which may also contain other minor elements, particularly as substitutes for cations, for example, to facilitate deposition as thin films by conventional magnetron sputtering techniques as described above. By way of example, the layers according to the present invention made of silicon nitride or silicon oxynitride, or even silicon oxide, particularly those deposited by magnetron sputtering, most often include elements such as Al, Zr, B, etc., in proportions that can reach, for example, up to 10 atomic percent or even sometimes up to 20 atomic percent, depending on the silicon content of the layer.Similarly, the titanium oxide layers may include, as a substitute for titanium, other minor metallic cations such as zirconium, without departing from the scope of the present invention. The glazing according to the invention may be a single pane of glass in which the stack of thin layers is preferably arranged on surface 2 of the single pane, with the surfaces of the substrate numbered from the outside to the inside of the building or the space it equips. The intermediate layers according to the invention, deposited from metallic targets of Ti, Si, Al, or a mixture of at least two of these elements, may include nitrogen, or even oxygen, even before any heat treatment.Thus, SIMS (Secondary Ion Mass Spectrometry) analyses have shown that these layers contain minor amounts of such heteroatoms, even in the absence of nitrogen or oxidizing gas during sputtering deposition (particularly under a 100% argon atmosphere), without it being possible to determine their exact quantity in the layer in question using currently available techniques. The same applies to the glass articles according to the invention.

[0061] According to another embodiment, the glazing according to the invention can be laminated glazing, comprising two glass substrates bonded by a thermoplastic interlayer, in particular a polyvinyl butyral (PVB) interlayer, said glazing being provided with a layer stack as described above. Preferably, the stack is deposited on the face of the substrate facing the interior of the laminated structure, specifically on face 2 of the glazing, and even more preferably, it is in contact with the thermoplastic interlayer. Alternatively, it can be deposited on the interior face of the laminated glazing, that is to say, on face 4 of the glazing, the faces being conventionally numbered from 1 to 4 from the outside to the inside of the glazing. The substrates described above can, of course, be thermally tempered and / or curved after the stack according to the invention has been deposited.

[0062] A method for manufacturing an article according to the invention includes, for example, at least the following steps:

[0063] - A glass substrate is introduced into a sputtering device; in one or more first compartment(s), at least one sublayer of a dielectric material is deposited.

[0064] - in another compartment, a titanium target is sprayed using a plasma generated from a gas containing nitrogen, preferably mixed with a rare gas such as argon, under conditions for obtaining a titanium nitride layer,

[0065] - in one or more subsequent compartment(s), at least one overlayer of a dielectric material is deposited.

[0066] According to the present invention, in a compartment comprising a target made of aluminium, silicon, titanium or a mixture of at least two of these elements, in particular silicon and aluminium, located immediately before and / or after the compartment equipped with the titanium target, a thin layer of 1 to 6 nm of aluminium, silicon, titanium or a mixture of at least two of these elements, in particular silicon and aluminium, is deposited by spraying said target in the presence of a neutral gas, for example exclusively argon.

[0067] The term "overlayer" in this description refers to the respective position of said layers relative to the functional layer(s) in the stack, said stack being supported by the glass substrate. In particular, the overlayer is the outermost layer of the stack, facing away from the substrate.

[0068] For the purposes of this invention, the thickness of a layer means the actual geometric thickness of the layer, as measured in particular by conventional techniques such as electron microscopy or other methods.

[0069] The invention and its advantages are described in more detail below by means of the non-limiting examples provided. In all examples and in the description, unless otherwise specified, the thicknesses given are geometric.

[0070] The properties and advantages of the glazing according to the invention are illustrated by the following examples: In a well-known manner, in the following examples, the various successive layers are deposited in successive dedicated compartments of the sputtering device, each compartment being equipped with a specific metallic target of Si, Ti, Al, Al-Si, chosen for the deposition of a specific layer of the stack and supplied with a specific gas composition of the composition sought for each layer.

[0071] More specifically, the silicon nitride-based layers are deposited in compartments of the device from a metallic silicon target (containing 8% aluminum by mass), in a reactive atmosphere containing argon and nitrogen using well-established techniques. The silicon nitride layers therefore also contain aluminum.

[0072] The silicon oxynitride-based layer is deposited in a compartment of the device from a metallic silicon target (containing 8 wt% aluminum) in a reactive atmosphere containing argon, nitrogen, and oxygen. The respective flow rates of the gases introduced into the compartment are 20 sccm (standard cubic centimeters per minute) of argon, 5 sccm of oxygen, and 100 sccm of nitrogen. The refractive index at 550 nm measured for this material is 1.88.

[0073] Titanium nitride layers are deposited in other compartments of the device from a pure metallic titanium target in a reactive atmosphere containing nitrogen and argon.

[0074] The aluminum or aluminum-silicon alloy layers were deposited from the argon-neutral atmosphere spraying of a target of the same composition.

[0075] The titanium layers were deposited from a pure metallic titanium target in a neutral argon atmosphere.

[0076] The conditions for magnetron deposition of such layers, in particular for obtaining a desired thickness of each layer of the stack, are technically well known in the field.

[0077] Example 1:

[0078] According to reference example 1, the glass substrate is successively covered with a stack of layers comprising a sub-layer (layer M1) based on silicon nitride (hereafter referred to as S13N4 for convenience even though the actual stoichiometry of the layer is not necessarily this), a functional layer based on titanium nitride, an overlayer (layer M2) also based on silicon nitride (hereafter referred to as S13N4 for convenience even though the actual stoichiometry of the layer is not necessarily this).

[0079] Examples 2 and 3:

[0080] According to examples 2 and 3 of the invention, an intermediate layer of aluminum (example 2) or of a silicon and aluminum alloy comprising 8% by weight of aluminum (example 3) is deposited above the titanium nitride layer (i.e. between the TiN layer and the S13N4 overlayer) in the stack of reference example 1.

[0081] Example 4: According to Example 4 of the invention, an intermediate layer of two nanometers of metallic titanium is deposited between the TiN layer and the SblsU sublayer in the stacking of reference Example 1. Example 5:

[0082] According to example 5 of the invention, an intermediate layer of one nanometer of metallic titanium is deposited between the TiN layer and the SbN4 overlayer and another layer of one nanometer of metallic titanium is inserted between the TiN layer and the SbN4 underlayer.

[0083] Example 6:

[0084] According to comparative example 6, an intermediate layer of nickel chromium (80% nickel by weight, 20% chromium by weight) is deposited between the TiN layer and the S13N4 overlayer in the stacking of reference example 1.

[0085] Example 7:

[0086] According to comparative example 7, an intermediate layer of niobium nitride with a thickness of 2 nm is inserted between the TiN layer and the S13N4 overlayer in the stacking of reference example 1.

[0087] Example 8:

[0088] In this example, the silicon nitride overlayer constituting module M2 in Example 2 was replaced by a silicon oxynitride layer with a refractive index at 550 nm of 1.88. All substrates are 4 mm thick Planiclear® clear glass, marketed by Saint-Gobain Glass France. All layers are deposited using a known method by magnetic field-assisted sputtering (often called magnetron sputtering). The deposition conditions were adjusted according to conventional techniques for magnetron deposition to obtain different stacks, the sequence of layers and their thicknesses (in nanometers, nm) of which are reported in Table 1 below: [Table 1]

[0089] ** silicon oxynitride SiON with a refractive index of 1.88 at 550 nm. All the glazing thus obtained according to examples 1 to 8 is then subjected to a heat treatment at 650°C for 10 minutes.

[0090] A-Measurement of glazing characteristics

[0091] The thermal and optical characteristics of the glazing before and after tempering were measured according to the following principles and standards:

[0092] 1°) Optical properties:

[0093] The measurements are carried out in accordance with the aforementioned standard NF EN410 (2011). More specifically, the luminous transmission TL is measured between 380 and 780 nm depending on the illuminant D65. 2) Thermal properties:

[0094] Normal emissivity n was measured according to the ISO 10292 standard mentioned previously.

[0095] B-Results The results obtained for monolithic glazing according to the examples described above are grouped in Table 2 below:

[0096] [Table 2]

[0097] Examples 2 and 3 are examples in accordance with the present invention. For these two examples, after hardening, a light transmission of approximately 55% is observed, remarkably higher than that of the same stack without the intermediate layer of aluminum or a Si-Al alloy according to the invention. According to an advantageous feature, the emissivity at normal incidence is also significantly reduced compared to reference example 1.

[0098] Examples 4 and 5 according to the present invention show a slight decrease in light transmission but also a significantly reduced emissivity compared to the reference stack. Ultimately, the use of the intermediate layer in the stack according to the invention thus makes it possible to obtain a light transmission equal to or substantially comparable to that of the reference stack, while improving the thermal properties of the glazing.

[0099] In the end, we observe that the selectivity of the glazing, as measured by the ratio Ti_ / eh, is significantly improved for the glazing according to the invention, particularly after tempering.

[0100] The comparative glazing according to example 6, comprising an intermediate layer of a NiCr alloy, exhibits a significantly reduced light transmission compared to the reference example and the examples according to the invention and ultimately a selectivity which is substantially equal to the reference glazing.

[0101] The comparative glazing according to example 7, comprising an intermediate layer of NbN, exhibits degraded selectivity compared to the reference example.

[0102] The glazing according to example 8, in which a layer of silicon (and aluminum) oxynitride is used in contact with the intermediate layer, also exhibits improved selectivity compared to the reference example.

[0103] If we look at the selectivities Ti_ / eh of the glazing according to examples 1 to 8, as shown in Table 2, we can see that the glazing according to the invention exhibits the best selectivities after undergoing heat treatment. According to other complementary examples, we seek to determine the optimal thickness of aluminum, used to constitute the intermediate layer, for selectivity, by varying this thickness in the stacking described in Example 2 above. The results obtained are shown in Table 3 below:

[0104] [Table 3]

[0105] Analysis of the data reported in Table 3 shows that the best results and compromises are obtained when the thickness of the intermediate aluminum layer is between 2 and 4 nm.

Claims

DEMANDS 1. A glass article with antisolar properties comprising at least one glass substrate provided with a stack of layers, in which the stack comprises successively from the surface of said substrate: - a first module Mi consisting of a layer based on a dielectric material of thickness ei or of a set of layers based on dielectric materials of cumulative thickness eu, said thickness ei being between 1 and 100 nm, preferably between 5 and 80 nm, in particular between 10 nm and 70 nm, - a TNi layer comprising titanium nitride, preferably titanium nitride-based, with a thickness between 2 and 80 nanometers, preferably between 4 and 70 nanometers, and preferably between 10 and 50 nm, - a second module M2 consisting of a layer based on a dielectric material of thickness e20u and a set of layers based on dielectric materials of cumulative thickness e å, said thickness e å being between 5 and 100 nm, preferably between 20 and 70 nm, and wherein an intermediate layer comprising, and preferably consisting essentially of, at least one element selected from silicon, aluminum, titanium or a mixture of at least two of these elements is deposited between said layer TN1 and said first module M1 and / or between said layer TNi and said second module M2, said intermediate layer(s) being of thickness between 0.2 nm and 6 nm, preferably between 0.5 and 5 nm, preferably again between 1 and 4 nm.

2. Glass article according to claim 1 in which said element deposited to constitute the intermediate layer(s) is essentially aluminium.

3. A glass article according to claim 1, wherein said element deposited to constitute the intermediate layer(s) is essentially silicon.

4. A glass article according to claim 1, wherein the elements deposited to constitute the intermediate layer(s) are essentially silicon and aluminum.

5. Glass article according to claim 1 in which said element deposited to constitute the intermediate layer(s) is essentially titanium.

6. Glass article according to any one of the preceding claims, wherein the module(s) Mi, M2 comprise materials selected from silicon nitride, aluminium nitride, aluminium and silicon nitride, tin oxide, mixed zinc and tin oxide, silicon oxide, titanium oxide, silicon oxynitride.

7. Glass article according to any one of the preceding claims, the first module Mi comprises and preferably consists of a layer comprising silicon nitride or silicon and aluminium nitride, said layer comprising silicon nitride or silicon and aluminium nitride being in contact with an intermediate layer.

8. Glass article according to any one of the preceding claims, the first module M2 comprises and preferably consists of a layer comprising silicon nitride or silicon and aluminium nitride, said layer comprising silicon nitride or silicon and aluminium nitride being in contact with an intermediate layer.

9. Glass article according to any one of the preceding claims, at least one of the modules M1 or M2 comprises and preferably consists of a layer comprising a silicon and / or aluminum oxynitride, the silicon and / or aluminum oxynitride layer being in contact with an intermediate layer. 10.A glass article according to any one of the preceding claims, wherein the stack comprises and preferably consists of the following sequence of layers, starting from the surface of the substrate: a silicon nitride or silicon oxynitride-based layer, said intermediate layer comprising at least one element selected from silicon, aluminum, titanium, or a mixture of at least two of these elements, said TN1 layer, optionally a second intermediate layer comprising at least one element selected from silicon, aluminum, titanium, or a mixture of at least two of these elements, a silicon nitride-based layer or a silicon oxynitride-based layer, and optionally a protective layer in particular selected from titanium oxides, zirconium oxides, or a mixture of titanium and zirconium oxides.

11. A glass article according to any one of claims 1 to 9, wherein the stack comprises and preferably consists of the following sequence of layers, starting from the surface of the substrate: a silicon nitride-based layer or based on silicon oxynitride, titanium, or a mixture of at least two of these elements, possibly another intermediate layer comprising at least one element selected from silicon, aluminium, titanium, or a mixture of at least two of these elements, said layer TN1, said intermediate layer comprising at least one element selected from silicon, aluminium, a layer based on silicon nitride or a layer based on silicon oxynitride, and possibly a protective layer in particular selected from titanium oxides, zirconium oxides or a mixture of titanium and zirconium oxides.

12. Glass article according to any one of the preceding claims, wherein the stack comprises a plurality of layers comprising titanium nitride, each layer comprising titanium nitride being separated from the next in the stack by a layer based on a dielectric material or by a set of layers based on dielectric materials and optionally by an intermediate layer comprising at least one element selected from silicon and / or aluminium.

13. Glass article according to any one of the preceding claims, wherein the stack does not contain a layer based on silver, platinum or gold.

14. A glass article according to any one of the preceding claims, wherein the glass substrate is made of clear glass.

15. A glass article according to any one of the preceding claims, wherein the glass substrate(s) provided with said stack are tempered or domed.

16. Glass article according to any one of the preceding claims, wherein the modulus Mi, the layer TNi, the modulus M2 and the intermediate layer(s) are deposited successively and in contact with each other.