Magnetosensitive microsensor

Abstract

The magnetosensitive microsensor contains a rectangular semiconductor substrate (1) with n-type impurity conductivity and a power source (2) in the current generator mode. On one of its main sides, three rectangular ohmic contacts (3), (4) and (5) of the same length are formed sequentially and at equal distances, located parallel to their long sides - one central (4) and two identical end (3) and (5). Each of the end contacts (3) and (5) is completely limited by a rectangular p-type ring (6) and (7), respectively, penetrating deep into the volume of the substrate (1). The central contact (4) is twice as narrow as the two end (3) and (5), which are symmetrical to it. The opposite side of the one with the contacts (3), (4) and (5) contains a highly conductive buffer layer (8). The end contacts (3) and (5) are simultaneously electrically connected to the terminals of the current source (2) and a high-impedance potentiometric trimmer (9). The measured magnetic field (10) is parallel to the plane of the substrate (1) and to the long sides of the contacts (3), (4) and (5) as the differential output (11) of the microsensor is the central contact (4) and the midpoint of the trimmer (9).