Planar-sensitive hall micro sensor

Abstract

The planar Hall-sensitive microsensor contains a current source (1) and two identical semiconductor substrates with n-type impurity conductivity and rectangular shape, parallel to their long sides - first (2) and second (3). On one of their main sides, three identical and rectangular ohmic contacts are formed sequentially from left to right - first (4) and (5), second (6) and (7), and third (8) and (9), located at equal distances from each other and parallel to their long sides. The second contacts (6) and (7) are central and symmetrically to them on their two long sides are located the other pairs (4) and (5) and respectively (8) and (9) contacts. Contacts (4), (5), (6) and (7), (8), (9) are surrounded on all sides by identical restrictive p-type rings of rectangular shape (10) and (11) respectively, penetrating into the volume of the pads (2) and (3). On the sides opposite to those with contacts (4), (5), (6), (7), (8) and (9) ohmic zones (12) and (13) are formed. Contact (4) of a pad (2) is connected to the middle (7) of the second (3) and to one terminal of the current source (1). Contact (6) of a pad (2) is connected to contact (5) of the second (3) and to the other terminal of the current source (1). Ohmic zones (12) and (13) on the opposite sides of the pads (2) and (3) are electrically connected to each other. The contacts (8) and (9) are the differential output (14) of the microsensor, as the measured magnetic field (15) is parallel to both the planes of the pads (2) and (3), and the long sides of the contacts (4), (5), (6), (7), (8) and (9).