Magnetic field microsensor

Abstract

The magnetic field microsensor comprises a rectangular semiconductor substrate (1) with n-type dopant conductivity and a dual-channel current source (2) operating in current generator mode. On one main surface of the substrate (1), three rectangular ohmic contacts are sequentially formed at equal distances - a first (3), a second (4), and a third (5). They are arranged parallel to their long sides, with the second (4) being central, and the first (3) and third (5) being edge contacts symmetrically positioned relative to it. The width of contact (4) is twice that of the edge contacts (3) and (5). Contact (4) is surrounded on all sides and in close proximity by a p-type ring (6), which deeply penetrates into the volume of the substrate (1). There are also two identical p-type regions (7) and (8) with a P-shaped geometry, symmetrical with respect to contact (4) and also deeply penetrating into the volume of the substrate (1). The first (3) and third (5) contacts are located within the inner parts of these regions (7) and (8). The opposite side of the substrate (1) contains a highly conductive layer (9). Each channel of the current source (2) is connected to one of the contacts (3) and (5), while its common terminal is connected to the central contact (4). The measured magnetic field (10) is parallel both to the plane of the substrate (1) and to the long sides of contacts (3), (4), and (5), with the edge contacts (3) and (5) forming the differential output (11) of the microsensor.