Hall microsensor device

Abstract

The Hall microsensor device contains a semiconductor substrate (1) with n-type impurity conductivity. On one of its main sides, three rectangular ohmic contacts (2), (3) and (4) of the same length are formed sequentially and at equal distances - one central (3) and two end (2) and (4). They are completely limited by a rectangular p-type ring (5), penetrating deep into the volume of the substrate (1). The contacts (2), (3) and (4) are located parallel to their long sides and are simultaneously perpendicular to the long sides of the p-type ring (5). Contact (3) is twice as wide as the other two (2) and (4), which are symmetrical to it. The two identical rectangular areas formed between the end (2) and (4) and the central (3) contact, and limited by the long sides of the p-type ring (5), contain in the middle of their peripheral zones one ohmic contact (6) and (7) and (8) and (9), respectively. The end rectangular contacts (2) and (4) are electrically connected and are connected to one terminal of a power supply (10), the other terminal of which is connected to the middle (3). Contacts (6) and (7), and (8) and (9), respectively located on one and the opposite peripheral side are connected to the non-inverting or only inverting inputs of a first (11) and second (12) operational amplifier. The outputs of the amplifiers (11) and (12) are connected to the input of a third differential amplifier (13), the output of which is the output (14) of the microsensor device. The measured magnetic field (15) is perpendicular to the plane of the substrate (1). Send feedback