SEMICONDUCTOR WAFER POLISHING COMPOSITION AND METHOD FOR POLISHING A SEMICONDUCTOR WAFER SURFACE

Description

1 / 74 SEMICONDUCTOR WAFER POLISHING COMPOSITION AND METHOD FOR POLISHING A SEMICONDUCTOR WAFER SURFACE FIELD OF DISSEMINATION

[0001] This disclosure relates to diamond-based fluid paste compositions for polishing semiconductor wafer surfaces and to associated methods for polishing semiconductor wafer surfaces. BACKGROUND

[0002] Semiconductor wafers that have the ability to operate more efficiently to achieve a significant reduction in energy consumption are highly desirable. One industrial area studied includes the polishing of semiconductor wafer surfaces in the electronics industry by a process known as chemical-mechanical polishing (CMP), in which a fluid paste is mechanically and chemically active to remove interfering deposited materials and particles from the surfaces of semiconductor wafers.

[0003] To complete the semiconductor manufacturing process, the central idea is that the surfaces of the semiconductor wafers are polished to provide a smooth and attractive surface and to obtain precise dimensions for the surfaces of the semiconductor wafers.

[0004] The manufacturing process for the production of semiconductor wafers involves, as a final step, a CMP process. This step provides a semiconductor wafer surface substantially free of surface defects obtained in previous milling cycles and, in addition, creates a Petition 870260041210, dated 04 / 05 / 2026, page 5 / 158 2 / 74 semiconductor wafer surface ready for end-user use. However, an inherent problem that cannot be ignored is that this process primarily uses fluid pastes which are, first and foremost, expensive, environmentally harmful, and, unfavorably, produce a low material removal rate. Furthermore, an additional disadvantage is that the CMP process takes several hours to complete and therefore consumes significant quantities of expensive and environmentally harmful fluid pastes.

[0005] Current general practice in semiconductor wafer manufacturing typically incorporates a compression polishing (CMP) step after the fine milling step or during the final lapping step. At the end of these two steps, the surface roughness of the semiconductor wafers is typically in the range of about 1.5 nm to about 3 nm. The CMP process is then employed to reduce the surface roughness to about 0.5 nm or, in some cases, even less. Simply put, the polishing process using currently available CMP fluid pastes, specifically formulated for semiconductor wafers, can take several hours to complete. Given that CMP fluid pastes are expensive and, moreover, utilize aggressive concomitant chemicals to affect the removal rate and surface quality of the semiconductor wafers, these characteristics naturally impose strict restrictions on their use.The electronics industry, therefore, wants to implement optimized polishing solutions and processes. With this in mind, adaptable polishing processes and compositions are needed. Petition 870260041210, dated 04 / 05 / 2026, page 6 / 158 3 / 74 continuously sought in the electronics industry to enable the end user to completely eliminate the CMP step or significantly reduce the time and fluid CMP paste consumption normally required. This will ultimately result in lower process costs and optimized shorter cycle times, with improved productivity.

[0006] In view of the above, there is therefore a need for polishing compositions and processes that provide a high rate of material removal from the semiconductor wafer surface, along with a reduction in the surface roughness of the semiconductor wafer equivalent to CMP quality, that are not laborious, time-consuming, or expensive, and that are additionally free of aggressive chemicals to optimize the polishing cycle of the semiconductor wafer surfaces. SUMMARY

[0007] A polishing composition is provided for polishing a semiconductor wafer surface, including a surface-modified monocrystalline diamond with a particle size D(50) ranging from about 0.10 pm to about 1 pm; a vehicle selected from the group consisting of water-based vehicles, glycol-based vehicles, oil-based vehicles, and hydrocarbon-based vehicles; and optionally one or more additives.

[0008] Optionally, the particle size D (50) of the surface-modified monocrystalline diamond varies from about 0.25 pm to about 0.50 pm.

[0009] Optionally, the particle size D(50) of Petition 870260041210, dated 04 / 05 / 2026, page 7 / 158 4 / 74 surface modified monocrystalline diamond ranges from about 0.25 pm to about 0.75 pm.

[0010] Optionally, the particle size D(50) of the surface-modified single-crystal diamond varies from about 0.50 pm to about 0.75 pm.

[0011] Optionally, the particle size D(50) of the surface-modified single-crystal diamond varies from about 0.75 pm to about 1 pm.

[0012] Optionally, one or more additives are selected from the group consisting of dispersing agents, pH modifiers, pH buffering agents, surfactants, polymers, complexing agents, rheology modifiers, chelating agents, antifoaming agents, wetting agents, oxidizing agents, and biocides.

[0013] Optionally, a removal rate of silicon carbide (SiC) material varies from about 1.3 pm / ha to about 8.2 pm / h.

[0014] Optionally, the SiC material removal rate varies from about 1.3 pm / ha to about 7.2 pm / h.

[0015] Optionally, the SiC material removal rate varies from about 1.3 pm / ha to about 3.3 pm / h.

[0016] Optionally, the SiC material removal rate varies from about 3.3 pm / ha to about 7.2 pm / h.

[0017] Optionally, the SiC material removal rate varies from about 3.3 pm / ha to about 8.2 pm / h.

[0018] Optionally, the SiC material removal rate varies from about 7.2 pm / ha to about 8.2 pm / h.

[0019] Optionally, a material removal fee Petition 870260041210, dated 04 / 05 / 2026, p. 8 / 158 5 / 74 of the SiC is increased in a range of about 185% to about 245% compared to a polishing composition including monocrystalline diamond particles or polycrystalline diamond particles.

[0020] Optionally, the surface roughness of a SiC wafer is substantially similar to, or lower than, the surface roughness of a SiC wafer polished with a polishing composition including monocrystalline diamond particles or polycrystalline diamond particles when the particle size D(50) of the surface-modified monocrystalline diamond ranges from about 0.25 pm to about 1 pm. [ 0021]Optionally, surface-modified monocrystalline diamond is present in a weight of about 0.5 percent by weight (% by weight) to about 5% by weight based on the total weight of the polishing composition.

[0022] Optionally, surface-modified monocrystalline diamond is present at a weight of about 0.5% by weight to about 2.5% by weight based on the total weight of the polishing composition.

[0023] Optionally, the vehicle is present in a volume of approximately 10% by volume to approximately 70% by volume based on the total volume of the polishing composition.

[0024] Optionally, SiC is monocrystalline silicon carbide.

[0025] Optionally, the surface-modified monocrystalline diamond includes one or more peaks, and one or more depressions. Petition 870260041210, dated 04 / 05 / 2026, page 9 / 158

[0026] Optionally, the semiconductor wafer polishing composition excludes potassium permanganate.

[0027] A method is further provided for polishing the surface of a semiconductor wafer, including contacting the surface of the semiconductor wafer with a polishing pad applied with the polishing composition mentioned above. The polishing pad applied with the polish is then moved relative to the semiconductor wafer. Finally, at least a portion of the semiconductor wafer is abraded so as to polish the semiconductor wafer.

[0028] Other systems, methods, features, and advantages will, or will become, apparent to one skilled in the art upon examination of the following figures and the detailed description. It is intended that all such additional systems, methods, features, and advantages are included in this description, are within the scope of this disclosure, and are protected by the following claims. Nothing in this section should be construed as limiting those claims. Additional aspects and advantages are discussed below in conjunction with the embodiments of the disclosure. It should be understood that both the preceding general description and the following detailed description of this disclosure are examples and explanatory and are intended to provide further explanation of the disclosure as claimed. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The attached drawings, which are included to provide a further understanding of the subject matter and are incorporated into and form part of this descriptive report, Petition 870260041210, dated 04 / 05 / 2026, page 10 / 158 7 / 74 illustrate implementations of the subject and, together with the description, serve to explain the principles of disclosure.

[0030] Figure IA shows an exemplary microstructure of a single-crystal diamond crystal with a surface modified according to an exemplary embodiment of the present subject.

[0031] Figure 1B shows an exemplary microstructure of a single-crystal diamond crystal, according to an exemplary embodiment of the present subject.

[0032] Figure 2 shows a flowchart demonstrating the individual steps of the process for polishing the surface of a semiconductor wafer according to an exemplary embodiment of the present subject.

[0033] Figure 3 shows (i) the silicon carbide material removal rates from a silicon carbide wafer (vertical bars) visualized on the left y-axis, and (ii) the surface roughness (closed black dots) visualized on the right y-axis, using: (I) a polishing composition employing a surface-modified monocrystalline diamond (Smmd) with a particle size D(50) ranging from about 0.25 pm to about 1 pm, (II) a polishing composition employing a monocrystalline diamond with a particle size D(50) ranging from about 0.25 pm to about 1 pm, or (III) a polishing composition employing a polycrystalline diamond with a particle size D(50) ranging from about 0.25 pm to about 1 pm according to an exemplary embodiment of the present subject. DETAILED DESCRIPTION Petition 870260041210, dated 04 / 05 / 2026, page 11 / 158 8 / 74

[0034] Unless defined otherwise, all technical and scientific terms used in the present invention have the same meaning commonly understood by someone with common knowledge of the art to which the subject described in the present invention relates.

[0035] When a range of values ​​is provided, for example, concentration ranges, percentage ranges or ratio ranges, it is understood that each intermediate value, up to the tenth of a unit of the lower limit, unless the context clearly indicates otherwise, between the upper and lower limits of that range and any other stated or intermediate value in that stated range, is covered by the subject matter described. The upper and lower limits of these smaller ranges may be included independently within the smaller ranges, and such embodiments are also covered by the subject matter described, subject to any limit specifically excluded in the stated range. When the stated range includes one or both limits, the ranges that exclude one or both of the included limits are also included in the subject matter described.

[0036] The following definitions establish the parameters of the subject described.

[0037] As used in the present invention of this disclosure, the term “diamond particle” refers to a discrete body, or discrete bodies, made of diamond. As used in the present invention of this disclosure, the term “diamond particle” is also considered to be a diamond crystal, or a diamond grain.

[0038] As used in the present invention of this Petition 870260041210, dated 04 / 05 / 2026, page 12 / 158 9 / 74 disclosure, the terms % by weight and % by volume refer to a percentage by weight and a percentage by volume, respectively, based on the total weight, or total volume, of a polishing composition for polishing the surface of a semiconductor wafer. [ 0039]As used in the present invention of this disclosure, the term diamond abrasive refers to a diamond material used to wear down material that is softer than the diamond abrasive itself.

[0040] As used in the present invention of this disclosure, the term material removal refers to the weight of a part removed in a given period of time, reported in milligrams, grams, etc.

[0041] As used in the present invention of this disclosure, the term material removal rate refers to the material removed divided by the reported time interval, such as, for example, material removed from the semiconductor wafer surface in microns per hour, milligrams per minute, grams per hour.

[0042] As used in the present invention of this disclosure, the term monocrystalline diamond refers to a diamond with a generally flat structural surface, formed by a high-pressure, high-temperature (HPHT) consolidation operation, or to a naturally formed diamond. The fracture of monocrystalline diamond occurs along atomic cleavage planes. A monocrystalline diamond particle breaks relatively easily along the cleavage planes.

[0043] As used in the present invention of this Petition 870260041210, dated 04 / 05 / 2026, page 13 / 158 10 / 74 disclosure, the term polycrystalline diamond refers to a diamond formed by explosion synthesis, resulting in a polycrystalline particle structure. Each polycrystalline diamond particle can include a large number of microcrystals smaller than about 100 angstroms. Polycrystalline diamond particles do not have cleavage planes.

[0044] As used in the present invention of this disclosure, the term ultrahard superabrasive material, or simply superabrasive material, refers to an abrasive material that exhibits superior hardness and abrasion resistance, and may exhibit a Knoop re-entry hardness typically greater than 2000, as found below, but not limited to, crystalline diamond, polycrystalline diamond (PCD), thermally stable polycrystalline diamond, chemical vapor deposition (CVD) diamond, metal matrix diamond composites, ceramic matrix diamond composites, nanodiamond, cubic boron nitride (cBN), polycrystalline cubic boron nitride (PcBN), or any combination thereof. The term abrasive, as used in the present invention, refers to any material used to wear down softer materials.

[0045] As used in the present invention of this disclosure, the term workpiece refers to parts or objects from which material is removed by polishing, lapping or other material removal methods.

[0046] As used in the present invention of this disclosure, the term monocrystalline diamond with surface Petition 870260041210, dated 04 / 05 / 2026, page 14 / 158 11 / 74 modified refers to diamonds made from unique, chemically artificial or synthetic diamond crystals, which typically provide improved performance in terms of material removal rates from semiconductor wafer surfaces when performing polishing, compared, for example, to single-crystal or polycrystalline diamonds. The unique irregular surface shape characteristics of the surface-modified single-crystal diamonds disclosed in the present invention provide remarkable material removal rates from semiconductor wafer surfaces. They also include the added benefit of adding an excellent surface finish to the semiconductor wafer surface due to the inherent multifaceted surface of the diamond. This distinct irregular surface provides a plurality of small peaks and depressions to reduce the roughness of the polished semiconductor wafer surface.

[0047] As used in the present invention of this disclosure, the term multifaceted refers to multiple edges located around flat faces.

[0048] As used in the present invention of this disclosure, the term surface roughness refers to a measurement of a two-dimensional image that quantifies an extent, or a degree of depressions and peaks on the surfaces, edges, and boundaries of an object, as set forth in the CLEMEX image analyzer, Clemex Vision PE 3.5 User Guide, 2001. Surface roughness is determined by the ratio of the convex perimeter, which is divided by the perimeter. Petition 870260041210, dated 04 / 05 / 2026, page 15 / 158 12 / 74 Surface roughness = Convex perimeter / Perimeter.

[0049] As the degree of depressions and peaks increases, the surface roughness factor decreases.

[0050] As used in the present invention of this disclosure, the term sphericity refers to an estimate of a bounded area of ​​a two-dimensional image or object (4nA) divided by the square of the perimeter (p2). Sphericity = 4π UM / p².

[0051] The surface roughness of semiconductors is an important factor to be considered for the electrical properties of semiconductor wafers. The mobility of electrons in semiconductor wafers is, in part, influenced by the thickness of the semiconductor wafer surface and by the size and shape configurations of its surface edges. By polishing the surface of the semiconductor wafer, a rough, opaque surface is advantageously transformed into a substantially flat and smooth surface, with mirror-like properties, and substantially free of particles that negatively influence the overall electronic operation of the semiconductor wafer.

[0052] As used in the present invention of this disclosure, the term perimeter refers to the boundary of a closed plane figure or to the sum of all the boundaries of a two-dimensional image.

[0053] As used in the present invention of this disclosure, the term convex perimeter refers to a line joining Feret tangent points, where Feret is the distance Petition 870260041210, dated 04 / 05 / 2026, page 16 / 158 13 / 74 between two parallel tangents that touch a boundary on each side of a two-dimensional image or object.

[0054] As used in the present invention of this disclosure, the term depression refers to a recess or gap in a particle, whether it is a recess or gap in a two-dimensional image, or a recess or gap in an object.

[0055] As used in the present invention of this disclosure, the term peak refers to a pointed projection or protrusion outward from the centroid of a particle, a pointed projection or protrusion outward from the centroid of a two-dimensional image, or a pointed projection or protrusion outward from an object.

[0056] As used in the present invention, the term surface area refers to the external surface of a particle. When used with a plurality of particles, i.e., powder, the term specific surface area is used and reported as surface area per gram of powder.

[0057] As used in the present invention and disclosure, the term "approximately" means plus or minus 5% of the numerical value of the number with which it is being used in the claims and in this disclosure. Thus, "approximately" can be used to provide flexibility to a numerical range endpoint, where a given value may be above or below the given value. Thus, for example, a value of 50% may be intended to encompass a range, which may be defined, for example, by ranges such as 47.5% to 52.25%, 47.5% to 52.5%, 47.75% to 50%, 50% to 52.5%, 48% to 48.5%, 48% Petition 870260041210, dated 04 / 05 / 2026, p. 17 / 158 14 / 74 a 48,75 %, 48 % a 49 %, 48 % a 49,5 %, 48 % a 49,75 %, 48 % a 50 %, 48 % a 50,25 %, 48 % a 50,5 %, 48 % a 50,75 %, 48 % a 51 %, 48 % a 51,5 %, 48 % a 51,75 %, 48 % a 52 %, 48 % a 52,25 %, 48 % a 52,5 %, 48,25 % a 48,5 %, 48,25 % a 48,75 %, 48,25 % a 49 %, 48,25 % a 49,5 %, 48,25 % a 49,75 %, 48,25 % a 50 %, 48,25 % a 50,25 %, 48,25 % a 50,5 %, 48,25 % a 50,75 %, 48,25 % a 51 %, 48,25 % a 51,35 %, 48,25 % a 51,5 %, 48,25 % a 51,75 %, 48,25 % a 52 %, 48,25 % a 52,25 %, 48,25 % a 52,5 %, 48,5 % a 48,75 %, 48,5 % a 49 %, 48,5 % a 49,5 %, 48,5 % a 49,75 %, 48,5 % a 50 %, 48,5 % a 50,25 %, 48,5 % a 50,5 %, 48,5 % a 50,75 %, 48,5 % a 51 %, 48,5 % a 51,35 %, 48,5 % a 51,5 %, 48,5 % a 51,75 %, 48,5 % a 52 %, 48,5 % a 52,25 %, 48,5 % a 52,5 %, 49 % a 49,25 %, 49 % a 49,5 %, 49 % a 49,75 %, 49 % a 50 %, 49 % a 50,25 %, 49 % a 50,5 %, 49 % a 50,75 %, 49 % a 51 %, 49 % a 51,35 %, 49 % a 51,5 %, 49 % a 51,75 %, 49 % a 52 %, 49 % a 52,25 %, 49 % a 52,5 % 49,5 % a 49,75 %, 49,5 % a 50 %, 49,5% to 50.25%, 49.5% to 50.5%, 49.5% to 50.75%, 49.5% to 51%, 49.5% to 51.5%, 49.5% to 51.75%, 49.5% to 52%, 49.5% to 52.25%, 49.5% to 52.5%, 49.75% to 50%, 49.75% to 50.25%, 49.75% to 50.5%, 49.75% to 50.75%, 49.75% to 51%, 49.75% to 51.35%, 49.75% to 51.5%, 49.75% to 51.75%, 49.75% to 52%, 49.75% to 52.25%, 49.75% to 52.5%, 50% to 50.25%, 50% to 50.5%, 50 % to 50.75%, 50% to 51%, 50% to 51.35%, 50% to 51.5%, 50% to 52%, 50% to 52.25%, 50% to 52.5%.,

[0058] As used in the present invention of this disclosure, the term “D(50)” refers to a particle size corresponding to 50% of the volume of the sampled particles being smaller than, and 50% of the volume of the sampled particles being Petition 870260041210, dated 04 / 05 / 2026, p. 18 / 158 15 / 74 greater than the indicated value D(50).

[0059] As used in the present invention of this disclosure, the term D(99) refers to a particle size corresponding to 99% of the volume of the sampled particles being smaller than, and 1% of the volume of the sampled particles being larger than, the indicated D(99) value.

[0060] Whenever used throughout the disclosure, the term generally has the meaning of typically or close to or in the vicinity of or within the range of.

[0061] As used in the present invention and this disclosure, the term substantially refers to the extent or degree of completeness or near-completeness of an action, characteristic, property, state, structure, item, or result. It is intended to cover approximately 6.25% of the numerical value of the number with which it is being used in the claims and otherwise in this disclosure.

[0062] As used in the present invention of this disclosure, the term surfactant refers to compounds that reduce the surface tension between, for example, two liquids, between a gas and a liquid, or between a liquid and a solid. A person skilled in the art knows that surfactants may commonly include, for example, but not limited to, the following class of chemical constituents: detergents, wetting agents, emulsifiers, foaming agents, and dispersants.

[0063] As used in the present invention of this disclosure, the term surface tension refers to the tendency of liquid surfaces to contract to the smallest area. Petition 870260041210, dated 04 / 05 / 2026, p. 19 / 158 16 / 74 superficial possible at rest.

[0064] As used in the present invention of this disclosure, the term amphoteric refers to compounds that are capable of reacting as both a base and an acid.

[0065] As used in the present invention of this disclosure, the term rheology modifier refers to compounds that are added to the polishing compositions that form the fluid diamond pastes to increase their viscosity and control the flow properties of the fluid diamond pastes.

[0066] As used in the present invention of this disclosure, physical vapor deposition (PVD) refers to a variety of vacuum deposition methods that can be used to produce thin films and coatings. PVD is characterized by a process in which the deposited material passes from a condensed phase to a vapor phase and then back to a thin-film condensed phase. The most common PVD processes are sputtering and evaporation.

[0067] As used in the present invention of this disclosure, chemical vapor deposition (CVD) refers to a method in which the substrate is exposed to one or more volatile precursors, which react and / or decompose on the substrate surface to produce the desired deposit. Frequently, volatile byproducts are also produced, which are removed by the gas flow through a reaction chamber. Diamond-based polishing compounds for polishing the surface of semiconductor wafers. Petition 870260041210, dated 04 / 05 / 2026, page 20 / 158 17 / 74

[0068] This disclosure is based on the premise of presenting a polishing composition including a surface-modified monocrystalline diamond for polishing the surface of virtually any semiconductor wafer. The main features of the polishing composition of the subject are the favorably high material removal rates from the semiconductor wafer surface, along with the added benefit of reducing the semiconductor wafer surface roughness, equivalent to the quality of chemomechanical polishing (CMP), in less time. Additionally, the production of the semiconductor polishing composition is inexpensive, and the polishing composition is further advantageously free of any aggressive chemicals to optimize the overall post-formation polishing cycle of semiconductor wafers.

[0069] The polishing composition may typically include a surface-modified single-crystal diamond with a particle size D(50) ranging from about 0.10 pm to about 1 pm. In some examples, the polishing composition includes the surface-modified single-crystal diamond having a particle size D(50) ranging from about 0.25 pm to about 1 pm. In other examples, the polishing composition includes the surface-modified single-crystal diamond having a particle size D(50) ranging from about 0.35 pm to about 1 pm. In still other examples, the polishing composition includes the surface-modified single-crystal diamond having a particle size D(50) ranging from about 0.45 pm to about 1 pm. In still other examples, the polishing composition includes the single-crystal diamond of Petition 870260041210, dated 04 / 05 / 2026, page 21 / 158 18 / 74 modified surface having a particle size D(50) ranging from about 0.55 μm to about 1 pm. In still other examples, the polishing composition includes modified surface monocrystalline diamond having a particle size D(50) ranging from about 0.65 μm to about 1 pm. In further examples, the polishing composition includes modified surface monocrystalline diamond having a particle size D(50) ranging from about 0.75 μm to about 1 pm. In further examples, the polishing composition includes modified surface monocrystalline diamond having a particle size D(50) ranging from about 0.85 μm to about 1 pm. Additionally, in further examples, the polishing composition includes modified surface monocrystalline diamond having a particle size D(50) ranging from about 0.95 pm to about 1 pm.

[0070] The polishing composition may also include surface-modified monocrystalline diamond with a particle size D(50) ranging from about 0.10 pm to about 0.25 pm, ranging from about 0.25 pm to about 0.35 pm, ranging from about 0.10 pm to about 0.35 pm, ranging from about 0.35 pm to about 0.45 pm, ranging from about 0.45 pm to about 0.55 pm, ranging from about 0.25 pm to about 0.45 pm, ranging from about 0.25 pm to about 0.55 pm, ranging from about 0.35 pm to about 0.55 pm, ranging from about 0.55 pm to about 0.65 pm, ranging from about 0.65 pm to about 0.75 pm, ranging from about 0.75 pm to about 0.85 pm, ranging from about 0.25 pm to about 0.85 pm, Petition 870260041210, dated 04 / 05 / 2026, page 22 / 158 19 / 74 varying from about 0.30 pm to about 0.85 pm, varying from about 0.35 pm to about 0.85 pm, varying from about 0.40 pm to about 0.85 pm, varying from about 0.45 pm to about 0.85 pm, varying from about 0.50 pm to about 0.85 pm, varying from about 0.55 pm to about 0.85 pm, varying from about 0.60 pm to about 0.85 pm, varying from about 0.65 pm to about 0.85 pm, varying from about 0.70 pm to about 0.85 pm, varying from about 0.80 pm to about 0.85 pm, varying from about 0.25 pm to about 0.90 pm, varying from about 0.30 pm to about 0.90 pm, varying from about 0.35 pm to about 0.90 pm, varying from about 0.40 pm to about 0.90 pm, varying from about 0.45 pm to about 0.90 pm, varying from about 0.50 pm to about 0.90 pm, varying from about 0.55 pm to about 0.90 pm, varying from about 0.60 pm to about 0.90 pm, varying from about 0.65 pm to about 0.90 pm, varying from about 0.70 pm to about 0.90 pm,ranging from about 0.75 pm to about 0.90 pm, ranging from about 0.80 pm to about 0.90 pm, ranging from about 0.85 pm to about 0.90 pm, ranging from about 0.25 pm to about 0.95 pm, ranging from about 0.30 pm to about 0.95 pm, ranging from about 0.35 pm to about 0.95 pm, ranging from about 0.40 pm to about 0.95 pm, ranging from about 0.45 pm to about 0.95 pm, ranging from about 0.50 pm to about 0.95 pm, ranging from about 0.55 pm to about 0.95 pm, ranging from about 0.60 pm to about 0.95 pm, ranging from about 0.65 pm to about 0.95 pm, ranging from about 0.70 pm to about 0.95 pm, ranging from about 0.75 pm to about 0.95 pm, ranging from about 0.80 pm to about 0.95 pm, Petition 870260041210, dated 04 / 05 / 2026, page 23 / 158 20 / 74 ranging from about 0.85 pm to about 0.95 pm, or ranging from about 0.90 pm to about 0.95 pm.

[0071] To determine the specific size of a diamond particle, a practitioner with basic knowledge of the technique can typically employ dynamic digital image analysis (DIA), static laser light scattering (SLS), also known as laser diffraction, or visual measurement by electron microscopy, a technique known as image analysis and light obscuration. Each method covers a characteristic size range within which measurement is possible. These ranges partially overlap. However, the measurement results of the same sample may vary depending on the specific method used. A practitioner with specialized knowledge who wants to determine particle size distributions will readily know how each of the aforementioned methods is commonly performed and practiced. Thus, the reader is directed to, for example, (i) “Comparison of Methods. Dynamic Digital Image Analysis, Laser Diffraction, Sieve Analysis”, Retsch Technology, and (ii) the scientific publication by Kelly et al., “Graphical comparison of image analysis and laser diffraction particle size analysis data obtained from the measurements of particle systems”, AAPS PharmSciTech. August 18, 2006; Vol. 7(3):69, for more information on each procedure and methodology, all of these documents are incorporated into the present invention by reference in their entirety.

[0072] The polishing composition may generally include surface-modified monocrystalline diamond Petition 870260041210, dated 04 / 05 / 2026, page 24 / 158 21 / 74 present at a weight of about 0.5 percent by weight (% by weight) to about 5 percent by weight based on the total weight of the polishing composition. In some examples, the surface-modified monocrystalline diamond is present at a weight of about 1 percent by weight to about 5 percent by weight based on the total weight of the polishing composition. In other examples, the surface-modified monocrystalline diamond is present at a weight of about 1.5 percent by weight to about 5 percent by weight based on the total weight of the polishing composition. In still other examples, the surface-modified monocrystalline diamond is present at a weight of about 2 percent by weight to about 5 percent by weight based on the total weight of the polishing composition. In still other examples, the surface-modified monocrystalline diamond is present at a weight of about 2.5 percent by weight to about 5 percent by weight based on the total weight of the polishing composition.In other additional examples, the surface-modified monocrystalline diamond is present at a weight of about 3% by weight to about 5% by weight based on the total weight of the polishing composition. In still other examples, the surface-modified monocrystalline diamond is present at a weight of about 3.5% by weight to about 5% by weight based on the total weight of the polishing composition. In still other examples, the surface-modified monocrystalline diamond is present at a weight of about 4% by weight to about 5% by weight based on the total weight of the polishing composition. In still other embodiments, the surface-modified monocrystalline diamond is present in a... Petition 870260041210, dated 04 / 05 / 2026, page 25 / 158 22 / 74 weight of approximately 4.5% by weight to approximately 5% by weight based on the total weight of the polishing composition.

[0073] The polishing composition may also include surface-modified monocrystalline diamond present in a weight of about 0.5% by weight to about 1% by weight, from about 1% by weight to about 1.5% by weight, from about 1.5% by weight to about 2% by weight, from about 0.5% by weight to about 1.5% by weight, from about 0.5% by weight to about 2% by weight, from about 1% by weight to about 2% by weight, from about 1% by weight to about 2.5% by weight, from about 1.5% by weight to about 2.5% by weight, from about 1% by weight to about 3% by weight, from about 1.5% by weight to about 3% by weight, from about 2% by weight to approximately 2.5% by weight, from approximately 2.5% by weight to approximately 3% by weight, from approximately 3% by weight to approximately 3.5% by weight, from approximately 2% by weight to approximately 3% by weight, from approximately 2% by weight to approximately 3.5% by weight, from approximately 2% by weight to approximately 4% by weight, from approximately 2.5% by weight to approximately 4% by weight,from about 3% by weight to about 4% by weight, from about 3.5% by weight to about 4% by weight, or from about 3.5% by weight to about 4.5% by weight based on the total weight of the polishing composition.

[0074] The surface-modified monocrystalline diamond disclosed in the present invention includes unique, artificial or synthetic diamond crystals that typically provide enhanced performance compared to, for example, conventional monocrystalline or polycrystalline diamonds. The unique irregular shape characteristics Petition 870260041210, dated 04 / 05 / 2026, page 26 / 158 23 / 74 of the surface of the modified monocrystalline diamond disclosed in the present invention provides remarkable material removal rates from the semiconductor wafer, with the added benefit of providing an excellent surface finish to the semiconductor wafer surface due to the inherent multifaceted surface of the diamond. This distinct irregular surface provides small cutting points to reduce the overall roughness of the semiconductor wafer surface.

[0075] Now, directing the reader's attention to the Figures, this is best observed in Figure IA, which represents an exemplary microstructure of a chemically modified surface monocrystalline diamond 10 disclosed in the present invention. The unique small peaks, which have been specifically adapted to facilitate optimized material removal, are shown with the numeral 12 in Figure IA. This contrasts sharply with, for example, a conventional monocrystalline diamond crystal 14, which has a substantially flat structural surface 16, as shown in Figure 1B.Therefore, at least due to the multifaceted surface signature, which is completely absent on the surface 16 of the single-crystal diamond crystal 14, the material removal rates will also be simultaneously restricted and critically impeded with the use of the single-crystal diamond crystal 14, compared to the surface-modified single-crystal diamond crystal 10 disclosed in the present invention and shown in Figure IA. As further shown in Figure IA, the particles... Petition 870260041210, dated 04 / 05 / 2026, page 27 / 158 24 / 74 of surface-modified single-crystal diamond 10 essentially exhibit peaks 12 and depressions 11, which are clearly deficient in conventional single-crystal diamond 14, shown in Figure 1B. The essential functionality of the peaks 12 lies, in particular, in the fact that they act as cutting edges when used in applications with free-flowing abrasive paste. It has been found that the performance of surface-modified single-crystal diamond particles 10 improves significantly when used in free-flowing abrasive lapping applications within a fluid paste or liquid suspension. When surface-modified single-crystal diamond particles 10 are used in a fixed bonding system, the depressions 11 and peaks 12 help to fix the particle within the bonding system. The lengths of the peaks 12 and the depths of the depressions 11 vary according to the modification-treatment parameters.The average depth of the depressions 11 in a diamond particle 10 typically varies in size from about 5% to about 70% of the maximum length of the surface-modified single-crystal diamond particle 10. Surface-modified single-crystal diamond particles 10 also exhibit unique characteristics in surface roughness, sphericity, and material removal. Surface-modified single-crystal diamond particles 10 exhibit a surface roughness of less than about 0.95. Surface roughness of about 0.50 to about 0.80 and about 0.50 to about 0.70 is also demonstrated. The surface roughness of single-crystal diamond particles. Petition 870260041210, dated 04 / 05 / 2026, page 28 / 158 The surface-modified sphericity of 25 / 74 diamond particles 10 is a function of the size of the metal particle(s), the amount of metal particle(s) in contact with the diamond 10, the reaction time, and the temperature used in the process. As surface roughness increases, the ability of the diamond particle 10 to perform material removal in a lapping process also increases. This is likely attributed to the greater number of cutting points that the surface modification process imparts to the diamond particles 10. Furthermore, surface-modified single-crystal diamond particles 10 exhibit sphericity of less than about 0.70. Sphericity readings of about 0.2 to about 0.5 and about 0.25 to 0.40 are also demonstrated.Although sphericity is a characteristic independent of surface roughness, there is a positive correlation between sphericity and the lapping performance of surface-modified single-crystalline diamond particles 10. Furthermore, there is a positive correlation between the mass loss of a diamond particle 10 and its lapping performance. Thus, as the mass loss of the diamond particle 10 increases, it becomes more aggressive in its ability to remove material from the surface of a semiconductor wafer. The above technical parameters are explained in greater detail at least in US Patents No. 8,182,562B2; US No. 8,652,226B2; and US No. 8,927,101B2, which document and are incorporated into the present invention in their entirety.

[0076] Now, the processes of formation of surface-modified monocrystalline diamond will be explained. Petition 870260041210, dated 04 / 05 / 2026, page 29 / 158 26 / 74 .

[0077] In one example, a reactive coating is used to modify the surface of the diamond. Such reactive coatings may generally include, but are not limited to, alkali metal hydroxides, such as lithium hydroxide, sodium hydroxide, potassium hydroxide, potassium carbonate, sodium peroxide, potassium dichromate, and potassium nitrate. Reactive coatings may also include a combination of alkali metal hydroxides.

[0078] Still other examples of metals that can be used as reactive coatings can be chosen from those included at least in Group VIII of the Periodic Table, their metallic compounds and combinations thereof. Other examples of materials that can be used as reactive coatings include the catalytic metals described in U.S. Patent No. 2,947,609 and the catalytic metals described in U.S. Patent No. 2,947,610, which documents are incorporated into the present invention by reference in their entirety.

[0079] In one specific example, a nickel (Ni) metallic coating is used as a reactive coating. The metallic coating used may typically contain about 10% by weight to about 90% by weight of Ni, or about 10% by weight to about 60% by weight, with a balance of diamond particles. However, it should be noted that these proportions are a matter of economic efficiency and not technical effectiveness. In one example, the metallic coating at least partially covers the diamond particles. Petition 870260041210, dated 04 / 05 / 2026, page 30 / 158 27 / 74 Alternatively, the metallic coating can uniformly envelop each diamond particle. It is not necessary for the metal to be chemically bonded to the diamond. Nickel and / or nickel alloys can be used as a coating for the diamond. One method of applying nickel to diamond is through an electrolytic deposition process. However, methods such as electroplating, physical vapor deposition (PVP), or chemical vapor deposition (CVD) can also be used to coat the diamond particles with a nickel layer.

[0080] In one example, diamond particles are coated with about 10% by weight to about 60% by weight of nickel-phosphorus coating. The coating process initially subjects uncoated diamond particles to a colloidal palladium solution. The fine palladium particles adsorb uniformly onto the diamond surface, making it self-catalytic for nickel deposition without electricity. In the next step of the process, activated diamond is placed in a nickel sulfamate solution containing about 10 grams per liter of dissolved nickel. While the activated diamond and nickel suspension mix, sodium hypophosphate is added to the suspension and the coating bath temperature is maintained at about 80 °C. When the sodium hypophosphate solution is added, all the nickel dissolved in the solution will autocatalytically deposit onto the surfaces of the activated diamond. [ 0081]Depending on the amount of nickel deposited in the diamond, more nickel can be added, replacing the Petition 870260041210, dated 04 / 05 / 2026, page 31 / 158 28 / 74 nickel / hypophosphate solution used for fresh solutions and repeating the process. If the particle coating is uniform, several cycles may be necessary to obtain a sufficiently uniform nickel coating on each of the diamond particles. By monitoring the number of cycles and controlling the coating bath parameters such as temperature, pH, and mixing energy, the nickel content in the diamond is reproducible. It is not uncommon for the coated diamond to exhibit some level of agglomeration as a consequence of the interactions of the diamond particles and the nickel plating during coating. As long as the individual diamond particles that include the agglomerates contain some amount of nickel coating, the presence of diamond agglomerates does not affect the quality of the process and no attempt to remove the agglomerates is necessary.

[0082] After coating the diamond particles with nickel, they are placed in a furnace, in a hydrogen atmosphere, vacuum atmosphere or inert gas atmosphere, heated from about 650 °C to about 1000 °C. Temperatures of about 700 °C to about 950 °C, or about 800 °C to about 900 °C may be routinely used. The nickel-coated diamond may be heated for a period of time ranging from about five minutes to about five hours. Periods ranging from about thirty minutes to about two hours, or from about one to about two hours, may typically be used.

[0083] After the heating cycle is complete and the diamond particles are cooled, the particles of Petition 870260041210, dated 04 / 05 / 2026, p. 32 / 158 29 / 74 modified diamond particles 10 are recovered by dissolving the surface-modified, nickel-coated single-crystal diamond particles 10 in acids. Acids that can typically be used include hydrochloric acid, hydrofluoric acid, nitric acid, or combinations thereof. Acids, or combinations thereof, are added in an acid-to-diamond coating ratio of 100:1 to 1000:1 by volume. The mixture is then heated from about 100 °C to about 120 °C for a period of about six to eight hours. The solution is then cooled, and the released surface-modified single-crystal diamond particles 10 settle, and the solution is decanted. The acid cleaning and heating steps can be repeated until substantially all of the metallic coating has been digested. [ 0084]Subsequently, any converted graphite (i.e., carbon from the diamond that was converted to graphite during the reaction with nickel) is then removed from the surface-modified single-crystal diamond particles 10 by means of any dissolution treatment method known to a person skilled in the art. A common example of a dissolution procedure includes the oxidation of graphitic carbons by gradual heating, ranging from about 150 °C to about 180 °C, in an acidic solution containing a mixture of HNOa and H2SO4.

[0085] Depending on the furnace conditions chosen, greater or lesser reaction may occur between the metal and the surface-modified monocrystalline diamond particles 10. How much Petition 870260041210, dated 04 / 05 / 2026, page 33 / 158 30 / 74 plus nickel attacks the surface-modified monocrystalline diamond 10, more graphite is unfavorably formed and therefore more weight is lost by the diamond. To completely dissolve the graphite, larger quantities of acid may be used or additional dissolution treatments may be necessary. The surface-modified monocrystalline diamond 10 particles are then washed to remove acids and residues, such as in water. Subsequently, the surface-modified monocrystalline diamond 10 particles are dried in an oven, in air, subjected to microwave drying or other drying methods commonly known to a person skilled in the art.

[0086] Although nickel has been described as being used in the process of modifying the surface of diamond particles, other metals, such as iron or, alternatively, manganese, chromium or their metallic compounds, or any combination thereof, may also be used for this purpose.

[0087] In another specific example of producing surface-modified diamond particles, about 10% by weight to about 80% by weight of diamond particles and about 20% by weight to about 90% by weight of iron particles are mixed using any appropriate mixing method that allows for a uniform mixture. In one example, the weighted portions of the iron and diamond particles are placed in a container, sealed, and inserted into a mixing device, such as a Turbula agitator-mixer (Glen Mills, Inc., Clifton, NJ, USA), for at least Petition 870260041210, dated 04 / 05 / 2026, page 34 / 158 31 / 74 approximately one hour or, alternatively, from about 30 minutes to about one hour. A binder may optionally be added to the mixture before mixing. Binders provide lubrication to the particle surfaces, allowing for denser packing and closer contact between the metal powder and the diamond. Binders also help to hold a pressed body together as a green body.

[0088] The mixture is then compressed to create an intimate mixture of diamond particles and iron particles. Any method commonly known to someone with average knowledge of the art can be used to compress the diamond particles and iron particles, provided that they form an intimate mixture and the particles are in close contact with each other. One method used to compress the mixture is to place it in a set of dies fixed in a press. An example of a suitable press is the Carver pellet press, manufactured by Carver, Inc. (Wabash, Indiana). In the die press, the mixture is subjected to a pressure of about 5 psi to about 50,000 psi, about 10,000 psi to about 40,000 psi, or about 15,000 psi to about 30,000 psi to form a pellet.Although pelletizing the mixture is taught, it is not necessary for the mixture of diamond and iron particles to be strictly formed into a pellet, only that the particles be compressed to form intimate contact with each other. Isostatic or monostatic pressing with deformable tools can also be used to achieve intimate contact.

[0089] Alternatively, a mixture of diamond and iron Petition 870260041210, dated 04 / 05 / 2026, page 35 / 158 32 / 74 can also be compressed by pressing it into a thin sheet several millimeters to several inches thick, i.e., by high-pressure compaction rollers or briquetting rollers. The formed sheets can then be cut into smaller sections for further processing, as discussed below. Another method of compressing the mixture of iron and diamond particles includes mixing and extruding the mixture under pressure. Pelletizing the mixture of diamond and iron particles using a pelletizer or compacting the mixture in a rotating drum are also alternative methods that can be used to compact the diamond and iron mixture. The pellets, bricks, or cakes formed by these methods can then be further processed, as discussed below.

[0090] Additional methods for compressing the mixture of iron and diamond particles may include injection molding, extrusion, pressing the mixture into a container, or ribbon casting. Alternatively, individual diamond particles may be coated with metallic particles by ion implantation, sputtering, spray drying, electrolytic coating, autocatalytic coating, or any other applicable method, provided that the iron and diamond particles are in intimate contact with each other.

[0091] After compression of the mixture of diamond and iron particles, the compressed mixture, which may be in a pellet, an aggregate or other condensed form, is placed in a furnace and, in a hydrogen atmosphere, vacuum atmosphere or Petition 870260041210, dated 04 / 05 / 2026, page 36 / 158 33 / 74 inert gas atmosphere, heated from about 650 °C to about 1000 °C. Temperatures typically from about 700 °C to about 900 °C, or from about 750 °C to about 850 °C, may be used. The compressed mixture may be heated for a period of about five minutes to about five hours. Generally, time periods ranging from about thirty minutes to about two hours, or from about one to about two hours, may be used.

[0092] After the heating cycle is complete and the compressed mixture is cooled, the surface-modified diamond particles 10 are recovered by dissolving the iron particles in acids. Acids that can generally be used include hydrochloric acid, hydrofluoric acid, nitric acid, or combinations thereof. The acids, or combinations thereof, are added in an acid:compressed mixture (i.e., pellet) ratio of 100:1 to 1000:1 by volume. The mixture is then heated from about 100 °C to about 150 °C for a period of about six to eight hours. The solution is then cooled, and the released surface-modified single-crystal diamond particles 10 settle, and the solution is decanted. The acid cleaning and heating steps can be repeated until substantially all the iron has been digested. [ 0093]Subsequently, any converted graphite (i.e., diamond carbon that was converted into graphite during the reaction with iron) is then removed from the surface-modified single-crystal diamond particles 10 by means of any known dissolution treatment method. Petition 870260041210, dated 04 / 05 / 2026, page 37 / 158 34 / 74 in the technique. An example of a common dissolution procedure includes the oxidation of graphitic carbons by gradual heating between about 150 °C and about 180 °C in an acidic solution containing a mixture of HNOa and H2SO4.

[0094] Depending on the furnace conditions selected, more or less reaction may occur between the metal and the surface-modified monocrystalline diamond particles 10. The more iron attacks the surface-modified monocrystalline diamond particles 10, the more graphite is formed in a disadvantageous way and therefore more weight is lost by the diamond. To completely dissolve the graphite, larger quantities of acid may be used or additional dissolution treatments may be necessary. The surface-modified monocrystalline diamond particles 10 are then washed to remove acids and residues, such as in water. Subsequently, the surface-modified monocrystalline diamond particles 10 are dried in an oven, in air, subjected to microwave drying or other drying methods routinely known to a person with average knowledge of the art.

[0095] The polishing composition may include a vehicle typically selected from the group consisting of water-based vehicles, glycol-based vehicles (e.g., ethylene glycol, propylene glycol, or mixtures thereof), oil-based vehicles, or hydrocarbon-based vehicles, and any desired combinations thereof. The polishing composition may include the aforementioned vehicle elements in any possible combination, or % of Petition 870260041210, dated 04 / 05 / 2026, page 38 / 158 35 / 74 volume that is not inconsistent and incompatible with any of the objectives of the present subject, such as from about 10% by volume to about 70% by volume, from about 15% by volume to about 70% by volume, from about 20% by volume to about 70% by volume, from about 25% by volume to about 70% by weight, from about 30% by volume to about 70% by volume, from about 35% by volume to about 70% by volume, from about 40% by volume to about 70% by volume, from about 45% by volume to about 70% by volume, from about 50% by volume to about 70% by volume, from about 55% by volume to about 70% by volume, from about 60% by volume about 70% by weight, from about 65% by volume to about 70% by volume, from about 10% by volume to about 15% by volume, from about 10% by volume to about 20% by volume, from about 10% by volume to about 25% by volume, from about 10% by volume to about 30% by volume,from about 10% by volume to about 35% by volume, from about 10% by volume to about 40% by volume, from about 10% by volume to about 45% by volume, from about 10% by volume to about 50% by volume, from about 10% by volume to about 55% by volume, from about 10% by volume to about 60% by volume, from about 10% by volume to about 65% by volume, from about 20% by volume to about 25% by volume, from about 20% by volume to about 30% by volume, from about 20% by volume to about 35% by volume, from about 20% by volume to about 40% by volume, from about 20% by volume to about 45% by volume, from about 20% by volume to about 50% by volume, from about 20% by volume to about 55% by volume, from about 20% by volume to about, Petition 870260041210, dated 04 / 05 / 2026, page 39 / 158 36 / 74 of 60% by volume, or from about 20% by volume to about 65% by volume, from about 30% by volume to about 35% by volume, from about 30% by volume to about 40% by volume, from about 30% by volume to about 45% by volume, from about 30% by volume to about 50% by volume, from about 30% by volume to about 55% by volume, from about 30% by volume to about 60% by volume, from about 30% by volume to about 65% by volume, from about 40% by volume to about 45% by volume, from about 40% by volume to about 50% by volume, from about 40% by volume to about 55% by volume volume, from about 40% by volume to about 60% by volume, from about 40% by volume to about 65% by volume, from about 50% by volume to about 55% by volume, from about 50% by volume to about 60% by volume, from about 50% by volume to about 65% by volume,or from about 60% by volume to about 65% by volume based on the total volume of the polishing composition.

[0096] The polishing composition may additionally include, optionally, at least one or more additives, which may typically be selected from the group consisting of dispersing agents, pH modifiers, pH buffering agents, surfactants, polymers, complexing agents, rheology modifiers, chelating agents, antifoaming agents, wetting agents, oxidizing agents and biocides. The polishing composition may include the above elements in any possible combination or in any quantity that is not inconsistent with and incompatible with the objectives of this disclosure.

[0097] In some examples, the optional constituents Petition 870260041210, dated 04 / 05 / 2026, page 40 / 158 37 / 74 above may be water-soluble, alcohol-soluble, or solvent-soluble. In other examples, the optional elements above may be water-dispersible, alcohol-dispersible, or solvent-dispersible, which may typically include, but not limited to, the following alcohols and solvents: ethanol, methanol, isopropanol, butanol, cyclohexanol, acetone, hexane, heptane, toluene, or any combinations thereof. Such combinations may involve mixing, for example, water with an alcohol, water with a solvent, an alcohol with yet another alcohol, or an alcohol with a solvent.

[0098] In some examples, the polishing compositions disclosed in the present invention may be formed as a fluid paste. In other examples, the polishing compositions disclosed in the present invention may be formed as a suspension. In still other examples, the polishing compositions disclosed in the present invention may be formed as a dispersion. In still other examples, the polishing compositions disclosed in the present invention may be formed as a paste.However, it should be emphasized that the polishing composition prepared with surface-modified monocrystalline diamond can be formulated in any type or form that is within the capabilities of someone with average knowledge of the technique, resulting in silicon carbide (SiC) removal rates from a SiC wafer surface ranging from about 1.3 pm / ha to about 8.2 pm / h, ranging from about 2.2 pm / ha to about 8.2 pm / h, ranging from about 3.2 pm / ha to about 8.2 pm / h, ranging from about 4.2 pm / ha to about 8.2 pm / h, ranging from about 5.2 pm / h to. Petition 870260041210, dated 04 / 05 / 2026, p. 41 / 158 38 / 74 cerca de 8,2 μη / h, variando de cerca de 6,2 μη / ha cerca de 8,2 μη / h, variando de cerca de 7,2 μη / ha cerca de 8,2 μη / h, variando de cerca de 1,3 μη / ha cerca de 2,2 μη / h, variando de cerca de 2,2 μη / ha cerca de 3,2 μη / h, variando de cerca de 3,2 μη / ha cerca de 4,2 μη / h, variando de cerca de 1,3 μη / ha cerca de 4,2 μη / h, variando de cerca de 2,2 μη / ha cerca de 4,2 μη / h, variando de cerca de 3,2 μη / ha around 4.2 μη / h, varying around 4.2 μη / ha around 5.2 μη / h, varying around 4.2 μη / ha around 6.2 μη / h, varying around 4.2 μη / ha around 7.2 μη / h, varying around 5.2 μη / ha around 6.2 μη / h, varying around 6.2 μη / ha around 7.2 μη / h, varying around 1.3 μη / ha around 3.3 μη / h, varying around 1.3 μη / ha around 7.2 μη / h, varying around 3.3 μη / ha cerca de 7,2 μη / h, ou variando de cerca de 3,3 μη / ha cerca de 8,2 pm / h.

[0099] The polishing composition may include surfactants including, for example, dispersing agents and wetting agents, such as, but not limited to, the following constituents: cationic surfactants, anionic surfactants, nonionic surfactants, amphoteric surfactants, or any mixtures and combinations thereof. The amount of surfactant in the polishing composition can typically vary from about 0.001% by weight to about 0.05% by weight, from about 0.001% by weight to about 0.1% by weight, from about 0.001% by weight to about 0.5% by weight, from about 0.001% by weight to about 1% by weight, from about 0.001% by weight to about 1.5% by weight, from about 0.001% by weight to about 2% by weight, from about 0.001% by weight to about Petition 870260041210, dated 04 / 05 / 2026, page 42 / 158 39 / 74 2.5% by weight, from about 0.001% by weight to about 3% by weight, from about 0.0001% by weight to about 1% by weight, from about 0.001% by weight to about 0.1% by weight, from about 0.001% by weight to about 0.2% by weight, from about 0.001% by weight to about 0.3% by weight, from about 0.001% by weight to about 0.4% by weight, from about 0.001% by weight to about 0.6% by weight, from about 0.001% by weight to about 0.7% by weight, from about 0.001% by weight to about 0.8% by weight, from about 0.001% by weight to about from 0.9% by weight, from about 0.005% by weight to about 0.1% by weight, from about 0.005% by weight to about 0.2% by weight, from about 0.005% by weight to about 0.3% by weight, from about 0.005% by weight to about 0.4% by weight, from about 0.005% by weight to about 0.5% by weight, from about 0.005% by weight to about 0.6% by weight, from about 0.005% by weight to about 0.7% by weight, from about 0.005% by weight to about 0.8% by weight, from about 0,0.005% by weight to about 0.9% by weight, from about 0.005% by weight to about 1% by weight, from about 0.005% by weight to about 0.05% by weight, from about 0.005% by weight to about 0.06% by weight, from about 0.005% by weight to about 0.07% by weight, from about 0.005% by weight to about 0.08% by weight, or from about 0.005% by weight to about 0.09% by weight based on a total weight of the polishing composition.

[00100] The polishing composition may optionally include low surface tension antifoaming agents and air-releasing agents. The antifoaming agent may be any suitable antifoaming agent, such as, but not limited to, for example, silicon-based, siloxanes, diol-based. Petition 870260041210, dated 04 / 05 / 2026, page 43 / 158 40 / 74 acetylenic, insoluble oils such as mineral oil, polymethylsiloxanes and other silicones, alcohols such as ethanol, methanol, isopropanol, butanol, cyclohexanol, stearates, hydrophobic polyols, hydrophobic silica, ethylene-bisstearamide, fatty acids, fatty acid alcohols and glycol antifoaming agents. The concentration of antifoaming agents in the polishing composition is typically from about 1 part per million (ppm) to about 10 ppm, from about 1 ppm to about 20 ppm, from about 1 ppm to about 30 ppm, from about 1 ppm to about 40 ppm, from about 1 ppm to about 50 ppm, from about 1 ppm to about 60 ppm, from about 1 ppm to about 70 ppm, from about 1 ppm to about 80 ppm, from about 1 ppm to about 90 ppm, from about 1 ppm to about 100 ppm, from about 1 ppm to about 110 ppm, from about 1 ppm to about 120 ppm, from about 1 ppm to about 130 ppm, from about 1 ppm to about 140 ppm, from about 1 ppm to about 150 ppm, from about 10 ppm to about 150 ppm,from about 20 ppm to about 150 ppm, from about 30 ppm to about 150 ppm, from about 40 ppm to about 150 ppm, from about 50 ppm to about 150 ppm, from about 60 ppm to about 150 ppm, from about 70 ppm to about 150 ppm, from about 80 ppm to about 150 ppm, from about 90 ppm to about 150 ppm, from about 100 ppm to about 150 ppm, from about 110 ppm to about 150 ppm, from about 120 ppm to about 150 ppm, from about 130 ppm to about 150 ppm, from about 140 ppm to about 150 ppm, from about 10 ppm to about 20 ppm, from about 15 ppm to about 20 ppm, from about 20 ppm to about 25 ppm, from about 20 ppm to about 30 ppm, from about 25 ppm to about 30 ppm, Petition 870260041210, dated 04 / 05 / 2026, page 44 / 158 41 / 74 from about 30 ppm to about 35 ppm, from about 30 ppm to about 40 ppm, from about 10 ppm to about 40 ppm, from about 15 ppm to about 40 ppm, from about 20 ppm to about 40 ppm, from about 25 ppm to about 40 ppm, from about 40 ppm to about 50 ppm, from about 45 ppm to about 50 ppm, from about 50 ppm to about 60 ppm, from about 55 ppm to about 60 ppm, from about 60 ppm to about 70 ppm, from about 65 ppm to about 70 ppm, from about 40 ppm to about 70 ppm, from about 45 ppm to about 70 ppm, from about 50 ppm to about 70 ppm, from about 55 ppm to about 70 ppm, from about 70 ppm to about 80 ppm, from about 75 ppm to about 80 ppm, from about 80 ppm to about 90 ppm, from about 85 ppm to about 90 ppm, from about 90 ppm to about 100 ppm, from about 70 ppm to about 100 ppm, from about 75 ppm to about 100 ppm, or from about 80 ppm to about 100 ppm.

[00101] An oxidizing agent may also be used optionally, which may be selected from the group consisting of hydrogen peroxide, oxone, ammonium and cerium nitrate, periodates, iodates, persulfates and mixtures thereof. The periodates, iodates and persulfates may be any periodate, iodate, persulfate or combination of periodates, iodates and persulfates, such as, for example, potassium periodate, potassium iodate, ammonium persulfate, potassium persulfate or sodium persulfate. In some examples, the oxidizing agent is oxone or potassium persulfate. The oxidizing agent may be present in the polishing composition in any suitable amount that is not inconsistent with and incompatible with the objectives of the present application. Petition 870260041210, dated 04 / 05 / 2026, page 45 / 158 42 / 74 subject. Typically, the polishing composition may include about 0.001% by weight or more, for example, about 0.005% by weight or more, about 0.01% by weight or more, about 0.05% by weight or more, or about 0.1% by weight or more of the oxidizing agent. In some examples, the polishing composition may include about 20% by weight or less, for example, about 17% by weight or less, about 15% by weight or less, about 12% by weight or less, about 10% by weight or less, about 7% by weight or less, about 5% by weight or less, about 2% by weight or less, or about 0.5% by weight or less of the oxidizing agent. In other examples, the polishing composition may include from about 0.001% by weight to about 20% by weight, for example, from about 0.001% by weight to about 17% by weight, from about 0.001% by weight to about 15% by weight, from about 0.001% by weight to about 12% by weight, from about 0.001% by weight to about 10% by weight, from about 0.0.001% by weight to about 7% by weight, from about 0.001% by weight to about 5% by weight, from about 0.001% by weight to about 2% by weight, from about 0.005% by weight to about 20% by weight, from about 0.005% by weight to about 17% by weight, from about 0.005% by weight to about 15% by weight, from about 0.005% by weight to about 12% by weight, from about 0.005% by weight to about 10% by weight, from about 0.005% by weight to about 7% by weight, from about 0.005% by weight to about 5% by weight, from about 0.005% by weight to about from 2% by weight, 0.01% by weight to about 20% by weight, 0.01% by weight to about 17% by weight, from about 0.01% by weight to about 15% by weight, from about 0.01% by weight to about 12% by weight, from, Petition 870260041210, dated 04 / 05 / 2026, page 46 / 158 43 / 74 approximately 0.01% by weight to approximately 10% by weight, approximately 0.01% by weight to approximately 7% by weight, approximately 0.01% by weight to approximately 5% by weight, 0.01% by weight to approximately 2% by weight, approximately 0.05% by weight to approximately 20% by weight, approximately 0.05% by weight to approximately 17% by weight, approximately 0.05% by weight to approximately 15% by weight, approximately 0.05% by weight to approximately 10% by weight, approximately 0.05% by weight to approximately 7% by weight, approximately 0.05% by weight to approximately 5% by weight, approximately 0.05% by weight to approximately 2% by weight.In still other examples, the polishing composition may include from about 0.001% by weight to about 0.05% by weight, from about 0.001% by weight to about 0.1% by weight, 0.001% by weight to about 0.2% by weight, 0.001% by weight to about 0.3% by weight, 0.001% by weight to about 0.4% by weight, from about 0.001% by weight to about 0.5% by weight, 0.001% by weight to about 0.6% by weight, 0.001% by weight to about 0.7% by weight, 0.001% by weight to about 0.8% by weight, 0.001% by weight to about 0.9% by weight, or from about 0.001% by weight to approximately 1% by weight of the oxidizing agent based on the total weight of the polishing composition.

[00102] The polishing composition disclosed in the present invention may have any suitable pH that is not inconsistent and incompatible with the scope of the present subject. In some examples, the polishing composition may typically have a pH ranging from about 3 to about 11. Without wishing to be limited to any specific theory, the polishing rate of the inventive compositions may increase as the pH is reduced from, for example, 11 to 3. Petition 870260041210, dated 04 / 05 / 2026, p. 47 / 158 44 / 74 Therefore, in some examples, the polishing composition may have a pH ranging from about 3 to about 11, from about 3 to about 10, from about 3 to about 9, from about 3 to about 8, from about 3 to about 7, from about 3 to about 6, from about 3 to about 5, from about 3 to about 4, or alternatively, a pH encompassing a range of about 4 to about 11, from about 5 to about 11, from about 6 to about 11, from about 7 to about 11, from about 8 to about 11, from about 9 to about 11, from about 10 to about 11, from about 4 to about 10, from about 5 to about 10, from about 6 to about 10, from about 7 to about 10, from about 8 to about 10, from about 9 to about 10, from about 4 to about 9, from about 5 to about 9, from about 6 to about 9, from about 7 to about 9, from about 8 to about 9, from about 4 to about 8, from about 5 to about 8, from about 6 to about 8, from about 7 to about 8,from about 4 to about 7, from about 5 to about 7, from about 6 to about 7, from about 4 to about 6, or from about 5 to about 6.

[00103] If desired, to achieve the above pH levels, a pH adjuster, or a pH buffering agent, or a combination thereof, may be used. Any suitable pH adjuster may be included in the polishing composition. By way of example, the pH adjuster may be in the form of, for example, one or more of nitric acid, sulfuric acid, hydrochloric acid, phosphoric acid or any combination thereof, or in the form of a base, such as, for example, sodium hydroxide, potassium hydroxide, hydroxide Petition 870260041210, dated 04 / 05 / 2026, p. 48 / 158 45 / 74 of cesium or ammonium hydroxide, or any combination thereof. The pH buffering agent may be any suitable buffering agent, for example, phosphates, acetates, borates, sulfonates, carboxylates, ammonium salts and the like, or any combination thereof. The pH adjuster, or pH buffering agent, can typically be included in an amount effective to achieve a desired pH level, such as in an amount of about 0.001% by weight to about 20% by weight, for example, from about 0.001% by weight to about 17% by weight, from about 0.001% by weight to about 15% by weight, from about 0.001% by weight to about 12% by weight, from about 0.001% by weight to about 10% by weight, from about 0.001% by weight to about 7% by weight, from about 0.001% by weight to about 5% by weight, from about 0.001% by weight to about 2% by weight, from about 0.005% by weight to about 20% by weight, from about 0.005% by weight to about 17% by weight,from about 0.005% by weight to about 15% by weight, from about 0.005% by weight to about 12% by weight, from about 0.005% by weight to about 10% by weight, from about 0.005% by weight to about 7% by weight, from about 0.005% by weight to about 5% by weight, from about 0.005% by weight to about 2% by weight, 0.01% by weight to about 20% by weight, 0.01% by weight to about 17% by weight, from about 0.01% by weight to about 15% by weight, from about 0.01% by weight to about 12% by weight, from about 0.01% by weight to about 10 % by weight, from about 0.01% by weight to about 7% by weight, from about 0.01% by weight to about 5% by weight, 0.01% by weight to about 2% by weight, from about 0.05% by weight to about, Petition 870260041210, dated 04 / 05 / 2026, page 49 / 158 46 / 74% by weight, from about 0.05% by weight to about 17% by weight, from about 0.05% by weight to about 15% by weight, from about 0.05% by weight to about 10% by weight, from about 0.05% by weight to about 7% by weight, from about 0.05% by weight to about 5% by weight, from about 0.05% by weight to about 2% by weight, from about 0.001% by weight to about 0.05% by weight, from about 0.001% by weight to about 0.1% by weight, 0.001% by weight to about 0.2% by weight, 0.001% by weight to about 0.3% by weight, 0.001% by weight to about 0.4% by weight, from about 0.001% by weight to about 0.5% by weight, 0.001% by weight to about 0.6% by weight, 0.001% by weight to about 0.7% by weight, 0.001% by weight to about 0.8% by weight, 0.001% by weight to about 0.9% by weight, or from about 0.001% by weight to about 1% by weight based on a total weight of the polishing composition.

[00104] The polishing composition may ideally additionally include polymers, including but not limited examples, such as, for example, polyvinyl chloride, polyvinyl fluoride, polyvinyl alcohol, polyvinyl acetate, vinyl polymer, polyvinylpyrrolidone, fluorocarbon, polycarbonate, fluoropolymer, polycarbonate, polyester, polyacrylate, polyether, polyethylene, polyamide, polyurethane, polystyrene, polypropylene, polyvinyl fluoride, urethane, copolymers of non-ionic monomers and ethylenically unsaturated monomers containing fractions, such as acryloylalkyl trialkyl ammonium salts, for example, acryloylethyl trimethyl ammonium chloride, methacryloylalkyl trialkyl ammonium salts, for example, methacryloylethyl trimethyl ammonium chloride, salts of Petition 870260041210, dated 04 / 05 / 2026, page 50 / 158 47 / 74 acrylamido and methacrylamidoalkyl trialkyl ammonium, for example, acrylamidopropyl trimethyl ammonium chloride and methacrylamidopropyl trimethyl ammonium chloride, and polymers including sulfonic acid monomeric units, hereinafter referred to as sulfonic acid polymer or copolymer. The sulfonic acid monomeric units may be any suitable sulfonic acid monomeric units, including one or more groups of the formula: —SO3H. Non-limiting examples of suitable sulfonic acid (homo)polymers include polyvinylsulfonic acid, polystyrenesulfonic acid (e.g., poly(4-styrenesulfonic acid)), polyallylsulfonic acid, ethyl polyacrylate sulfonic acid, butyl polyacrylate sulfonic acid, polyisoprenesulfonic acid and the like.Suitable sulfonic acid copolymers include copolymers comprising sulfonic acid monomeric units and monomers comprising carboxylic acid groups, or derivatives of carboxylic acid groups, such as amides.

[00105] The polishing composition may include about 1 ppm or more of the polymers, for example, about 5 ppm or more, about 10 ppm or more, about 20 ppm or more, about 30 ppm or more, about 40 ppm or more, or about 50 ppm or more. Alternatively, or in addition, the polishing composition may include about 500 ppm or less of the polymers, for example, about 450 ppm or less, about 400 ppm or less, about 350 ppm or less, about 300 ppm or less, about 250 ppm or less, about 200 ppm or less, about 150 ppm or less, or about 100 ppm or less. Thus, the polishing composition may include the polymers in a Petition 870260041210, dated 04 / 05 / 2026, p. 51 / 158 48 / 74 quantity limited by any two of the endpoints mentioned above. For example, the polishing composition may include approximately 1 ppm to approximately 500 ppm of the polymers, approximately 5 ppm to approximately 450 ppm, approximately 10 ppm to approximately 400 ppm, approximately 10 ppm to approximately 350 ppm, approximately 10 ppm to approximately 300 ppm, approximately 10 ppm to approximately 250 ppm, approximately 10 ppm to approximately 200 ppm, approximately 20 ppm to approximately 300 ppm, approximately 20 ppm to approximately 250 ppm, approximately 20 ppm to approximately 200 ppm, approximately 20 ppm to approximately 150 ppm, approximately 20 ppm to approximately 100 ppm, approximately 10 ppm to approximately 100 ppm, approximately 10 ppm to approximately 90 ppm, about 10 ppm to about 80 ppm, about 10 ppm to about 70 ppm, about 10 ppm to about 60 ppm, about 10 ppm to about 50 ppm, or about 10 ppm to about 40 ppm.

[00106] Biocides known in the art may also be incorporated into the polishing composition in some instances. The biocide may be any suitable biocide, as would be known to one with common knowledge of the art, and may be present in the polishing composition in any suitable amount that is not inconsistent with and incompatible with the principles of the present subject. By way of example and without limitation, a suitable biocide may be an isothiazolinone, isothiazolinone or similar biocide, alcohols, aldehydes, chlorine and chlorine-releasing agents, for example, sodium hypochlorite, chlorhexidine, iodine, peroxygenated compounds, for example, hydrogen peroxide, peracetic acid, phenolic compounds, quaternary ammonium compounds, for example, benzalkonium chloride, bases, for example. Petition 870260041210, dated 04 / 05 / 2026, page 52 / 158 49 / 74 example, sodium hydroxide, potassium hydroxide, and acids, for example, mineral and organic acids. The concentration of the biocide used in the polishing composition can typically range from about 1 ppm to about 60 ppm, from about 1 ppm to about 50 ppm, from about 1 ppm to about 40 ppm, from about 1 ppm to about 30 ppm, from about 1 ppm to about 20 ppm, from about 1 ppm to about 10 ppm, from about 1 ppm to about 5 ppm, from about 10 ppm to about 60 ppm, from about 15 ppm to about 60 ppm, from about 20 ppm to about 60 ppm, from about 25 ppm to about 60 ppm, from about 30 ppm to about 60 ppm, from about 35 ppm to about 60 ppm, from about 40 ppm to about 60 ppm, from about 45 ppm to about 60 ppm, from about 50 ppm to about 60 ppm, or from about 55 ppm to about 60 ppm.

[00107] The polishing composition may also include conventional rheology modifiers, such as, for example, castor oil-derived polymers, cellulose, alkali-acrylic emulsions, hydrophobic ethoxylated urethane resins, polyurea, polyamides, calcium sulfonates, and similar and equivalent rheology modifiers, in a concentration generally ranging from about 1000 ppm to about 20000 ppm. In some examples, the polishing composition includes from about 2500 ppm to about 20000 ppm of the rheology modifier. In other examples, the polishing composition includes from about 5000 ppm to about 20000 ppm of the rheology modifier. In still other examples, the polishing composition includes from about 7500 ppm to about 20000 ppm of the rheology modifier. In still other examples, the polishing composition Petition 870260041210, dated 04 / 05 / 2026, page 53 / 158 50 / 74 includes from about 10,000 ppm to about 20,000 ppm of the rheology modifier. In other additional examples, the polishing composition includes from about 12,500 ppm to about 20,000 ppm of the rheology modifier. In still other examples, the polishing composition includes from about 15,000 ppm to about 20,000 ppm of the rheology modifier. In still other examples, the polishing composition includes from about 17,500 ppm to about 20,000 ppm of the rheology modifier.

[00108] The polishing composition may also include from about 1000 ppm to about 2500 ppm, from about 2500 ppm to about 5000 ppm, from about 5000 ppm to about 7500 ppm, from about 1000 ppm to about 7500 ppm, from about 2000 ppm to about 7500 ppm, from about 2500 ppm to about 7500 ppm, from about 3000 ppm to about 7500 ppm, from about 4000 ppm to about 7500 ppm, from about 5000 ppm to about 7500 ppm, from about 6000 ppm to about 7500 ppm, from about 7000 ppm to about 7500 ppm, from from about 7500 ppm to about 10000 ppm, from about 8500 ppm to about 10000 ppm, from about 9500 ppm to about 10000 ppm, from about 10000 ppm to about 12500 ppm, from about 10000 ppm to about 13000 ppm, from about 11000 ppm to about 12500 ppm, from about 11500 ppm to about 12500 ppm, from about 12000 ppm to about 12500 ppm, from about 12500 ppm to about 15000 ppm, from about 13000 ppm to about 15000 ppm, from about 13500 ppm to about 15000 ppm,from about 14000 ppm to about 15000 ppm, from about 15000 ppm to about 17500 ppm, from about 16000 ppm to about 17500 ppm, from about 16500 ppm to about 17500 ppm, from about 10000 ppm to about 15000 ppm, from about from 10500, Petition 870260041210, dated 04 / 05 / 2026, page 54 / 158 51 / 74 ppm to approximately 15,000 ppm, from approximately 11,000 ppm to approximately 15,000 ppm, from approximately 11,500 ppm to approximately 15,000 ppm, from approximately 12,000 ppm to approximately 15,000 ppm, from approximately 10,000 ppm to approximately 17,500 ppm, from approximately 10,500 ppm to approximately 17,500 ppm, from approximately 11,000 ppm to approximately 17,500 ppm, from approximately 11,500 ppm to approximately 17,500 ppm, from approximately 12,000 ppm to approximately 17,500 ppm, from approximately 12,500 ppm to approximately 17,500 ppm, from approximately 13,000 ppm to approximately 17,500 ppm, from approximately 13,500 ppm to approximately 17500 ppm, from about 14000 ppm to about 17500 ppm, from about 14500 ppm to about 17500 ppm, from about 15000 ppm to about 17500 ppm, from about 15500 ppm to about 17500 ppm, from about 16000 ppm to about 17500 ppm, from about 16500 ppm to about 17500 ppm, or from about 17000 ppm to about 17500 ppm of the rheology modifier.

[00109] The polishing composition may optionally include a chelating or complexing agent. The complexing agent may be any suitable chemical additive that increases the rate of material removal from the semiconductor wafer surface or that removes traces of metallic contaminants during the polishing cycle. Suitable chelating or complexing agents may include, for example, carbonyl compounds, e.g., acetylacetonates and the like, simple carboxylates, e.g., acetates, aryl carboxylates and the like, carboxylates containing one or more hydroxyl groups, e.g., glycolates, lactates, gluconates, gallic acid and salts, or partial salts thereof, and the like, di-, tri- and polycarboxylates, e.g., oxalates, oxalic acid, phthalates, citrates, succinates, Petition 870260041210, dated 04 / 05 / 2026, p. 55 / 158 52 / 74 tartrates, malates, edetates, for example, dipotassium EDTA, mixtures thereof, and similar substances, carboxylates containing one or more sulfonic and / or phosphonic groups, and similar substances. Suitable chelating or complexing agents may also include, for example, di-, tri- or polyalcohols, for example, ethylene glycol, pyrocatechol, pyrogallol, tannic acid and the like, polyphosphonates, such as Dequest 2010, Dequest 2060 or Dequest 2000 (available from Solutía Corp.) and amine-containing compounds, for example, ammonia, amino acids, amino alcohols, di-, tri- and polyamines and the like in an amount of about 0.001% by weight to about 20% by weight, for example, from about 0.001% by weight to about 17% by weight, from about 0.001% by weight to about 15% by weight, from about 0.001% by weight to about 12% by weight, from about 0.001% by weight to about 10% by weight, from about 0.001% by weight to about 7% by weight, from about 0.001% by weight to about 5% by weight, from about 0,0.001% by weight to about 2% by weight, from about 0.005% by weight to about 20% by weight, from about 0.005% by weight to about 17% by weight, from about 0.005% by weight to about 15% by weight, from about 0.005% by weight to about 12% by weight, from about 0.005% by weight to about 10% by weight, from about 0.005% by weight to about 7% by weight, from about 0.005% by weight to about 5% by weight, from about 0.005% by weight to about 2% by weight, 0.01% by weight to about 20% by weight, 0.01% by weight to about 17% by weight weight, from about 0.01% by weight to about 15% by weight, from about 0.01% by weight to about 12% by weight, from about 0.01% by weight to about 10% by weight, from about, Petition 870260041210, dated 04 / 05 / 2026, page 56 / 158 53 / 74 0.01% by weight to about 7% by weight, from about 0.01% by weight to about 5% by weight, 0.01% by weight to about 2% by weight, from about 0.05% by weight to about 20% by weight, from about 0.05% by weight to about 17% by weight, from about 0.05% by weight to about 15% by weight, from about 0.05% by weight to about 10% by weight, from about 0.05% by weight to about 7% by weight, from about 0.05% by weight to about 5% by weight, from about 0.05% by weight to about 2% by weight, from about 0.001% by weight to about 0.05% by weight, from about from 0.001% by weight to about 0.1% by weight, 0.001% by weight to about 0.2% by weight, 0.001% by weight to about 0.3% by weight, 0.001% by weight to about 0.4% by weight, from about 0.001% by weight to about 0.5% by weight, 0.001% by weight to about 0.6% by weight, 0.001% by weight to about 0.7% by weight, 0.001% by weight to about 0.8% by weight, 0.001% by weight to about 0.9% by weight, or from about 0,0.001% by weight to approximately 1% by weight based on the total weight of the polishing composition.

[00110] The polishing composition disclosed in the present invention can be prepared by any suitable technique, many of which are readily known to those skilled in the art. The polishing composition can be prepared in batches, in a continuous process, or in a combination thereof.

[00111] It should be understood that, generally, the actual quantity of one or more ingredients in polishing compositions according to the disclosure methods, for example, diamond particles, components of the composition of Petition 870260041210, dated 04 / 05 / 2026, page 57 / 158 The proportion of 54 / 74 polishing and water may vary depending on the desired degree of dilution or concentration. In this respect, some embodiments may be packaged in the form of a concentrate, for example, a 50x concentrate, a 100x concentrate, a 200x concentrate, etc., where water can be added later in order to dilute the polishing composition, such as at the point of use, for example, by an end user. Alternatively, the polishing composition may be packaged in a diluted form with water already included. For example, in some embodiments, the concentrated forms of each ingredient of the polishing composition, as a whole, may facilitate shipping, distribution, and sale. However, in other embodiments, each ingredient of the polishing composition, as a whole, may be in a diluted form, for example, to simplify end-user use.Thus, the weight ranges of the ingredients, as established in the present invention, may refer to diluted or concentrated ranges.

[00112] Consequently, each ingredient may be present in a diluted form suitable for end use, or in a concentrated form upon receipt and subsequently diluted when used by the end user, for example, 2x concentrate, 5x concentrate, 10x concentrate, 25x concentrate, 40x concentrate, 50x concentrate, 60x concentrate, 70x concentrate, 100x concentrate, 125x concentrate, 150x concentrate, 175x concentrate, 200x concentrate. When the concentrate is diluted with water, for example, 1 weight of water, 4 weights of water, 9 weights of water, 24 weights of water, 39 weights of Petition 870260041210, dated 04 / 05 / 2026, page 58 / 158 55 / 74 water, 49 water weights, 59 water weights, 69 water weights, 99 water weights, 124 water weights, 149 water weights, 174 water weights, 199 water weights, respectively, each ingredient of the polishing composition will be present in embodiments of the subject in an amount within the dilution ranges. Furthermore, as will be understood by those with common knowledge of the art, the concentrate may contain an appropriate fraction of the water present in the final solution. For example, in some applications, the concentrate may contain an appropriate fraction of the water present in the final polishing composition in order to ensure that the components of the polishing composition are at least partially or completely dissolved in the concentrated form. Methods for polishing the surface of a semiconductor wafer The subject of this disclosure also provides a method for polishing the surface of a semiconductor wafer, a process illustrated in Figure 2. Drawing the reader's attention to Figure 2, the process includes at least the steps of contacting the surface of a semiconductor wafer with a polishing pad applied with the polishing composition mentioned in step 20. The polishing pad applied with the polishing composition mentioned is then moved relative to the semiconductor wafer in step 22. Finally, the method is completed by wearing away at least a portion of the semiconductor wafer so as to polish the semiconductor wafer, as demonstrated in step 24.

[00114] A person with average knowledge of the technique Petition 870260041210, dated 04 / 05 / 2026, page 59 / 158 56 / 74 would know that this can be routinely performed on, for example, a 15-inch benchtop polishing machine (Lapmaster Wolters) in a typically one-sided polishing configuration applied to the semiconductor wafer surface. Alternatively, in other examples, polishing the semiconductor wafer surface can also be adequately performed using a two-sided polishing configuration.

[00115] Generally, such a lapping polishing apparatus contains a plate which, when in use, is in motion and has a resultant speed of orbital, linear or circular motion. A polishing pad is in direct contact with the plate and therefore moves with the plate when it is set in motion. A support holds the semiconductor wafer to be polished, contacting and moving the semiconductor wafer relative to the surface of the polishing pad. Polishing of the semiconductor wafer is performed by placing the semiconductor wafer in contact with the polishing pad and the polishing composition (i.e., the polishing composition disposed between the semiconductor wafer and the polishing pad), while the polishing pad and the plate move together in a configuration relative to the semiconductor wafer, so as to wear away at least a portion of the semiconductor wafer.

[00116] The degree of the polishing endpoint is determined by monitoring the weight of the semiconductor wafer, which is used to calculate the amount of material that is abraded and therefore removed from the semiconductor wafer. Such techniques are routinely well known in the art by a person with common knowledge of the art. Petition 870260041210, dated 04 / 05 / 2026, page 60 / 158 57 / 74

[00117] Polishing refers to the removal of at least a portion of a semiconductor wafer surface to polish the surface. Polishing can be performed to provide a semiconductor wafer surface with reduced surface roughness when polishing is complete, removing, for example, grooves, depressions, and the like. However, alternatively, polishing can also be performed to introduce or restore a surface geometry characterized by an intersection of planar segments.

[00118] The polishing pad can ideally be made of any suitable material or configuration, many of which are readily known in the art by a person with common knowledge of the art. Suitable polishing pads may include, for example, without limitation, woven and non-woven polishing pads. In addition, suitable polishing pads may be made of any suitable polymer with varying density, hardness, thickness, compressibility, rebound capacity under compression and compression modulus. Such suitable polymers may typically include, for example, but without limitation, the following options: polyvinyl chloride, polyvinyl fluoride, nylon, fluorocarbon, polycarbonate, polyester, polyacrylate, polyether, polyethylene, polyamide, polyurethane, polystyrene, polypropylene, co-formed products thereof and any mixtures or combinations thereof.

[00119] The polishing pad can typically assume any configuration suitable for providing a cycle Petition 870260041210, dated 04 / 05 / 2026, p. 61 / 158 58 / 74 effective polishing of the semiconductor wafer surface. For example, the polishing pad may be circular and, when in use, may typically have a rotational motion around an axis perpendicular to the plane defined by the pad surface. The polishing pad may be cylindrical, whose surface acts as the polishing surface and, when in use, may typically exhibit a rotational motion around the central axis of the cylinder. The polishing pad may be in the form of an endless belt, which, when in use, may typically exhibit a linear motion relative to the cutting edge to be polished. The polishing pad may easily assume any suitable shape and, when in use, may have a reciprocating or orbital motion along a plane or semicircle.Many other variations and configurations will be readily apparent and available to a professional with average knowledge of the technique and, therefore, should also be incorporated and covered within the scope of this disclosure.

[00120] It should be emphasized that the method of the present subject matter can be routinely used to polish any suitable semiconductor wafer surface. In some examples, this may include, in particular, polishing at least one layer of silicon carbide (SiC) from, for example, a SiC wafer surface with a polishing composition containing a surface-modified monocrystalline diamond, according to the basic principles of the present subject matter. In some examples, the SiC may be monocrystalline SiC. The SiC may be removed from the surface at any suitable rate to ultimately effect the polishing of the wafer surface. Petition 870260041210, dated 04 / 05 / 2026, page 62 / 158 59 / 74 SiC. For example, SiC can be removed at a rate ranging from about 1.3 pm / ha to about 8.2 pm / h. In some examples, SiC is removed at a rate ranging from about 2.2 pm / ha to about 8.2 pm / h. In other examples, SiC is removed at a rate ranging from about 3.2 pm / ha to about 8.2 pm / h. In other examples, SiC is removed at a rate ranging from about 4.2 pm / ha to about 8.2 pm / h. In still other examples, SiC is removed at a rate ranging from about 4.2 pm / ha to about 8.2 pm / h. In still other examples, SiC is removed at a rate ranging from about 5.2 pm / ha to about 8.2 pm / h. In still other examples, SiC is removed at a rate ranging from about 6.2 pm / ha to about 8.2 pm / h. In still other additional examples, SiC is removed at a rate ranging from about 7.2 pm / ha to about 8.2 pm / ha.

[00121] 0 SiC can also be removed at a rate ranging from about 1.3 pm / ha to about 2.2 pm / h, ranging from about 2.2 pm / ha to about 3.2 pm / h, ranging from about 3.2 pm / ha to about 4.2 pm / h, ranging from about 1.3 pm / ha to about 4.2 pm / h, ranging from about 2.2 pm / ha to about 4.2 pm / h, ranging from about 3.2 pm / ha to about 4.2 pm / h, ranging from about 4.2 pm / ha to about 5.2 pm / h, ranging from about 4.2 pm / ha to about 6.2 pm / h, ranging from about 4.2 pm / ha to about 7.2 pm / h, ranging from about 5.2 pm / ha to about 6.2 pm / h, ranging from about 6.2 pm / h to about 7.2 pm / h, ranging from about 1.3 pm / h to about 3.3 pm / h, ranging from about 1.3 pm / h to about 7.2 pm / h, ranging from about 3.3 pm / h to about 7.2 pm / h, or ranging from about 3.3 pm / h to about 8.2 pm / h. Petition 870260041210, dated 04 / 05 / 2026, page 63 / 158 60 / 74

[00122] A material removal rate from SiC can be increased in a range of about 185% to about 245% with the polishing composition containing surface-modified monocrystalline diamond 10, when compared to a polishing composition that includes monocrystalline diamond particles or polycrystalline diamond particles. In some examples, the material removal rate from SiC is increased in a range of about 190% to about 245% with the polishing composition containing surface-modified monocrystalline diamond 10, when compared to a polishing composition that includes monocrystalline diamond particles or polycrystalline diamond particles.In still other examples, the SiC material removal rate is increased by a range of about 200% to about 245% with the polishing composition containing surface-modified monocrystalline diamond 10, when compared to a polishing composition that includes monocrystalline diamond particles or polycrystalline diamond particles. In other examples, the SiC material removal rate is increased by a range of about 210% to about 245% with the polishing composition containing surface-modified monocrystalline diamond 10, compared to a polishing composition that includes monocrystalline diamond particles or polycrystalline diamond particles. In other examples, the SiC material removal rate is increased by a range of about 220% to about 245% with the polishing composition containing surface-modified monocrystalline diamond 10, compared to a polishing composition that includes diamond particles. Petition 870260041210, dated 04 / 05 / 2026, page 64 / 158 61 / 74 monocrystalline or polycrystalline diamond particles. In other examples, the SiC material removal rate is increased in a range of about 230% to about 245% with the polishing composition containing the surface-modified monocrystalline diamond 10, compared with a polishing composition that includes monocrystalline diamond particles or polycrystalline diamond particles.

[00123] The rate of removal of SiC material can also be increased in a way from about 185% to about 190%, from about 190% to about 195%, from about 185% to about 195%, from about 185% to about 200%, from about 185% to about 205%, from about 185% to about 210%, from about 185% to about 215%, from about 185% to about 220%, from about 185% to about 225%, from about 185% to about 230%, from about 185% to about 235%, from about 185% to about 240%, from about 190% to about 200%, close from 190% to about 205%, from about 190% to about 210%, from about 190% to about 215%, from about 190% to about 220%, from about 190% to about 225%, from about 190% to about 230%, from about 190% to about 235%, from about 190% to about 240%, from about 195% to about 200%, from about 195% to about 205%, from about 195% to about 210%, from about 195% to about 215%from approximately 195% to approximately 220%, from approximately 195% to approximately 225%, from approximately 195% to approximately 230%, from approximately 195% to approximately 235%, from approximately 195% to approximately 240%, from approximately 195% to approximately 245%, from approximately 200% to approximately 205%, from approximately 200% to approximately 210%, from approximately 200, Petition 870260041210, dated 05 / 04 / 2026, page. 65 / 158 62 / 74% to approximately 215%, from approximately 210% to approximately 220%, from approximately 210% to approximately 225%, from approximately 210% to approximately 230%, from approximately 210% to approximately 235%, from approximately 210% to approximately 240%, from approximately 200% to approximately 220%, from approximately 200% to approximately 225%, from approximately 200% to approximately 230%, from approximately 200% to approximately 235%, from approximately 215% to approximately 220%, from approximately 220% to approximately 225%, from approximately 220% to approximately 230%, from approximately 220% to approximately 235%, from approximately 220% to approximately 240%, from approximately 225 % to about 230%, about 220% to about 235%, about 225% to about 235%, about 225% to about 240%, about 230% to about 240%, about 225% to about 245%, about 235% to about 240%, about 235% to about 245%, or from about 240% to about 245% with the composition of contained polymer or surface-modified monocrystalline diamond 10,when compared to a polishing composition including monocrystalline diamond particles or polycrystalline diamond particles. EXAMPLE

[00124] The following example is presented to provide those skilled in the art with a complete description and disclosure of how to manufacture and use the subject matter described, and is not intended to limit the scope of what the inventors consider to be their disclosure, nor is it intended to represent that the experiment below is the whole or only experiment performed. Efforts have been made to ensure accuracy with respect to the numbers used, but some experimental errors and deviations should be considered. Petition 870260041210, dated 04 / 05 / 2026, page 66 / 158 63 / 74 EXAMPLE 1 Polishing compositions including a surface-modified monocrystalline diamond exhibit improved silicon carbide (SiC) removal rates from SiC wafer surfaces when compared to polishing compositions including monocrystalline diamond particles or polycrystalline diamond particles.

[00125] The removal rates of silicon carbide (SiC) material from the surface of a 4-inch diameter silicon carbide wafer and the surface roughness were tested using (I) a polishing composition employing a surface-modified monocrystalline diamond (Smmd* in TABLE 1) with a particle size D(50) characterized as being 0.25 µm, 0.5 µm, 0.75 µm or 1 µm; (II) a polishing composition using monocrystalline diamond (Mono in TABLE 1) with a particle size D(50) characterized as being 0.25 µm, 0.5 µm, 0.75 µm or 1 µm; or (III) a polishing composition using polycrystalline diamond (Poly in TABLE 1) with a particle size D(50) characterized as being 0.25 sqm, 0.5 sqm, 0.75 sqm or 1 sqm, according to an exemplary embodiment of the present subject. All the chemical constituents of the polishing compositions of (I), (II) and (III) were the same, except for the specific type of diamond used.

[00126] TABLE 1 shows the particle size of the diamond used in the polishing composition in column 1, the specific type of diamond used in the polishing composition in column 2, and the results obtained for the SiC material removal rates from the SiC wafer surface in column 3, a Petition 870260041210, dated 04 / 05 / 2026, page 67 / 158 64 / 74 surface roughness of the SiC wafer in column 4, the average value per volume distribution in column 5, the D(50) particle size distribution in column 6, and the D(99) particle size distribution in column 7. All polishing data shown in TABLE 1 were obtained on a 15-inch benchtop polishing machine (Lapmaster Wolters) using a 15-inch polyurethane polishing pad. The 15-inch benchtop polishing machine plate was subjected to a circular motion set at 60 revolutions per minute (RPM), and diamond fluid pastes were applied at a fluid paste flow rate of 10 ml / min with a downward force of 3.2 psi. Diamond particles were used at a concentration of 80 carats / gallon in polishing compositions (I), (II), and (III) as a water-based fluid paste suspended in distilled water (ADI). The results obtained were as follows.

[00127] Essentially, polishing compositions that include surface-modified monocrystalline diamond (Smmd* in TABLE 1) exhibited a SiC material removal rate from the SiC wafer surface that was increased in a range of about 185% to about 245% when compared to a polishing composition that includes monocrystalline diamond particles (Mono in TABLE 1) or polycrystalline diamond particles (Poly in TABLE 1).

[00128] To obtain the previous results, the calculated average value of the material removal rate in column 3 for each particle size of, respectively, 0.25 pm, 0.5 pm, 0.75 pm or 1 pm for monocrystalline diamond (Mono in TABLE 1) and polycrystalline diamond (Poly in TABLE 1) was Petition 870260041210, dated 04 / 05 / 2026, page 68 / 158 65 / 74 compared to its corresponding value for surface-modified monocrystalline diamond (Smmd* in TABLE 1) used at the same diamond particle size. In other words, the calculated average material removal rate in column 3 for Mono 0.25 pm and for Poly 0.25 pm was compared to the material removal rate of surface-modified monocrystalline diamond (Smmd) 0.25 pm*. The calculated average material removal rate in column 3 for Mono 0.50 pm and for Poly 0.50 pm was compared to the material removal rate of surface-modified monocrystalline diamond (Smmd) 0.50 pm*. The calculated average material removal rate in column 3 for Mono 0.75 pm and for Poly 0.75 pm was compared to the material removal rate of surface-modified monocrystalline diamond (Smmd) 0.75 pm*.The average calculated value of the material removal rate in column 3 for Mono 1 pm and for Poli 1 pm was compared to the value of the material removal rate of surface-modified monocrystalline diamond (Smmd) 1 pm*.

[00129] The results from TABLE 1 are shown graphically in Figure 3. It is important to highlight that the measured surface roughness is substantially similar to or improved when polishing with surface-modified monocrystalline diamond (Smmd* in TABLE 1), compared to monocrystalline diamond (Mono in TABLE 1) or polycrystalline diamond (Poly in TABLE 1), as illustrated by the closed black dots, where the obtained surface roughness values ​​are visualized on the y-axis on the right side in Figure 3. Petition 870260041210, dated 04 / 05 / 2026, page 69 / 158 66 / 74 [TABLE 1] 1. Particle Size . diamond type in the polishing composition . material removal rate (pm / h) . surface roughness (nm) . volume distribution (pm) . D(50) (pm) . D(99 ) (pm) 1 pm mmd 1pm* .2 .71 .3 .08 .01 oli 1 pm .4 .72 .09 .97 .71 ono 1 pm .34 .69 .92 .86 .21 0 .75um mmd 0.75 pm* .2 .98 .9 .79 .35 oli 0.75 pm .76 .88 .86 .79 .23 ono 0.75 pm .84 .88 .79 .75 .63 0.5um mmd 0.5 .34 .53 .59 .56 .16 Petition 870260041210, dated 04 / 05 / 2026, page 70 / 158 6Ί / Ί4 pm* oli 0.5 pm .84 .59 .55 .3 ono 0.5 pm .18 .65 .4 .38 .8Ί 0.25um mmd 0.25 pm* .30 .48 .28 .2Ί .64 oli 0.25 pm .50 .6Ί .2Ί .25 ,Ί2 ono 0.25 pm ,42 ,64 ,31 ,29 ,Ί6

[00130] Although the present disclosure has been described in connection with its embodiments, it will be understood by those skilled in the art that additions, deletions, modifications and substitutions not specifically described may be made without departing from the spirit and scope of the disclosure, as defined in the appended claims.

[00131] With regard to the use of substantially any plural and / or singular terms in the present invention, those skilled in the art may translate from plural to singular and / or from singular to plural, as Petition 870260041210, dated 04 / 05 / 2026, p. 71 / 158 68 / 74 appropriate to the context and / or application. The various singular / plural permutations are not expressly stated in the present invention for the sake of clarity.

[00132] The subject described in the present invention sometimes illustrates different components contained within, or connected to, different other components. It should be understood that such represented architectures are merely exemplary and that, in fact, many other architectures can be implemented to achieve the same functionality. In a conceptual sense, any arrangement of components to achieve the same functionality is effectively associated in such a way that the desired functionality is achieved. Therefore, any two components combined in the present invention to achieve a specific functionality can be seen as associated with each other in such a way that the desired functionality is achieved, regardless of architectures or intermediate components.Similarly, any two components thus associated can also be seen as operationally connected or operationally coupled to each other to achieve the desired functionality, and any two components capable of being thus associated can also be seen as operationally coupleable to each other to achieve the desired functionality. Specific examples of operationally coupleable components include, among others, physically coupleable and / or physically interactive components, and / or wireless interactive and / or wireless interactive components, and / or logically interactive and / or logically interactive components. Petition 870260041210, dated 04 / 05 / 2026, page 72 / 158 69 / 74

[00133] In some instances, one or more components may be referred to in the present invention as “configured for”, “configured by”, “configurable for”, “operable for”, “adapted for”, “capable of”, “conformable to”, etc. Those skilled in the art will recognize that such terms (e.g., “configured for”) may generally encompass active-state components and / or inactive-state components and / or standby-state components, unless the context requires otherwise.

[00134] Although particular aspects of the present subject described in the present invention have been demonstrated and described, it will be evident to those skilled in the art that, based on the teachings described in the present invention, alterations and modifications can be made without departing from the subject described in the present invention and its broader aspects, and therefore the appended claims should encompass within their scope all alterations and modifications that are within the true spirit and scope of the subject described in the present invention.Those skilled in the art will understand that, in general, the terms used in the present invention, and especially in the appended claims (e.g., bodies of the appended claims), are generally intended as “open” terms (e.g., the term “including” should be interpreted as “including, but not limited to”, the term “having” should be interpreted as “having at least”, the term “includes” should be interpreted as “includes, but is not limited to”, etc.). Petition 870260041210, dated 04 / 05 / 2026, p. 73 / 158 70 / 74

[00135] It will be further understood by those familiar with the technique that if a specific number of an introduced claim recitation is intended, such intention will be explicitly stated in the claim and, in the absence of such recitation, such intention will not be present. For example, as an aid to understanding, the following appended claims may contain the use of the introductory phrases “at least one” and “one or more” to introduce claim recitations.However, the use of such phrases should not be interpreted as implying that the introduction of a claim recitation by the indefinite articles “a” or “an” limits any specific claim containing such an introduced claim recitation to claims containing only one of these recitations, even when the same claim includes the introductory phrases “one or more” or “at least one” and indefinite articles such as “a” or “an” (for example, “a” and / or “an” should typically be interpreted as meaning “at least one” or “one or more”); the same applies to the use of definite articles used to introduce claims recitations.

[00136] Furthermore, even if a specific number of an introduced claim recitation is explicitly recited, experts in the technique will recognize that such recitation should typically be interpreted as meaning at least the number recited (e.g., the mere recitation of “two recitations,” without other modifiers, typically means at least two recitations, or two or more recitations). Petition 870260041210, dated 04 / 05 / 2026, page 74 / 158 71 / 74

[00137] Furthermore, in instances where a convention analogous to “at least one of A, B, and C, etc.” is used, such a construction is generally understood in the sense that a specialist in the technique would understand the convention (for example, “a system having at least one of A, B, and C” would include, but not be limited to, systems that have A alone, B alone, C alone, A and B together, A and C together, B and C together, and / or A, B, and C together, etc.). In instances where a convention analogous to “at least one of A, B, or C, etc.” is used, such a construction is generally understood in the sense that a specialist in the technique would understand the convention (for example, “a system having at least one of A, B, or C” would include, but not be limited to, systems that have A alone, B alone, C alone, A and B together, A and C together, B and C together, and / or A, B, and C together, etc.).It will be further understood by those familiar with the art that, typically, a disjunctive word and / or phrase that presents two or more alternative terms, whether in the description, claims, or drawings, should be understood as contemplating the possibilities of including one of the terms, either of the terms, or both, unless the context indicates otherwise. For example, the phrase “A or B” will typically be understood as including the possibilities of “A” or “B” or “A and B”.

[00138] With regard to the attached claims, experts in the field will understand that the operations cited therein can, in general, be performed in any order. Furthermore, although several operational flows are displayed in one or more sequences, it should be understood that Petition 870260041210, dated 04 / 05 / 2026, p. 75 / 158 72 / 74 The various operations may be performed in different orders than those illustrated or may be performed simultaneously. Examples of such alternative orderings may include overlapping, interleaved, interrupted, reordered, incremental, preparatory, supplementary, simultaneous, reverse, or other variants, unless the context indicates otherwise. Furthermore, terms such as “responsive to,” “related to,” or other past tense adjectives are generally not intended to exclude such variants, unless the context indicates otherwise.

[00139] Skilled artisans will understand that the specific exemplary processes and / or devices and / or technologies described above are representative of more general processes and / or devices and / or technologies described elsewhere in this document, such as in the claims made in the present invention and / or elsewhere in this application.

[00140] Although several aspects and embodiments have been disclosed in the present invention, other aspects and embodiments will be apparent to those skilled in the art. The various aspects and embodiments disclosed in the present invention are for illustrative purposes only and are not intended to be limiting, the true scope and spirit being indicated by the following claims.

[00141] The illustrative embodiments described in the detailed description, drawings and claims are not intended to be limiting. Other embodiments may be used and other modifications may be made, without departing from the spirit or scope of the subject matter presented in this invention. Petition 870260041210, dated 04 / 05 / 2026, p. 76 / 158 73 / 74

[00142] When a range of values ​​is provided, it is understood that each intermediate value, up to the tenth of a unit of the lower limit, unless the context clearly indicates otherwise, between the upper and lower limits of that range and any other stated or intermediate value within that stated range is covered by the disclosure. The upper and lower limits of those smaller ranges, which may be included independently within the smaller ranges, are also covered by the disclosure, subject to any limit specifically excluded in the stated range. When the stated range includes one or both limits, the ranges that exclude either of the two included limits are also included in the disclosure.

[00143] A person skilled in the art will recognize that the components (e.g., operations), devices, objects, and the accompanying discussion described in the present invention are used as examples for the sake of conceptual clarity and that various configuration modifications are contemplated. Consequently, as used in the present invention, the specific examples presented and the accompanying discussion are intended to be representative of their more general classes. In general, the use of any specific example is intended to be representative of its class, and the non-inclusion of specific components (e.g., operations), devices, and objects should not be considered limiting.

[00144] Additionally, for example, any sequence(s) and / or temporal order of the system and method described in the present invention. Petition 870260041210, dated 04 / 05 / 2026, page 77 / 158 in this disclosure are illustrative and should not be interpreted as being restrictive in nature. Consequently, it should be understood that the steps of the process may be shown and described as being in a sequence or temporal order, but are not necessarily limited to being performed in any specific sequence or order. For example, the steps of such processes or methods may generally be performed in several different sequences and orders, although they still fall within the scope of this disclosure.

[00145] Finally, the patent and / or application publications discussed in the present invention are provided solely for their disclosure prior to the filing date of the disclosure described. Nothing in the present invention should be construed as an admission that the disclosure described does not have the right to precede such publication by virtue of prior disclosure. Petition 870260041210, dated 04 / 05 / 2026, p. 78 / 158

Claims

1 / 5 CLAIMS 1. Semiconductor wafer polishing composition, characterized in that it comprises: a surface-modified monocrystalline diamond with a particle size D(50) of 0.10 pm to 1 pm, a surface roughness of 0.50 to 0.80, and a sphericity of less than 0.70; a vehicle selected from the group consisting of water-based vehicles, glycol-based vehicles, oil-based vehicles, and hydrocarbon-based vehicles; and optionally one or more additives.

2. Semiconductor wafer polishing composition according to claim 1, characterized in that the particle size D(50) of the surface-modified monocrystalline diamond varies from 0.25 pm to 0.50 pm.

3. Semiconductor wafer polishing composition according to claim 1, characterized in that the particle size D(50) of the surface-modified monocrystalline diamond varies from 0.25 pm to 0.75 pm.

4. Semiconductor wafer polishing composition according to claim 3, characterized in that the particle size D(50) of the surface-modified monocrystalline diamond varies from 0.50 pm to 0.75 pm.

5. Semiconductor wafer polishing composition according to claim 1, characterized in that the particle size D(50) of the surface-modified monocrystalline diamond varies from 0.75 pm to 1 pm. Petition 870260023555, dated 03 / 13 / 2026, pp. 67 / 72 2 / 5 6. Semiconductor wafer polishing composition, according to claim 1, characterized in that one or more additives are selected from the group consisting of dispersing agents, pH modifiers, pH buffering agents, surfactants, polymers, complexing agents, rheology modifiers, chelating agents, antifoaming agents, wetting agents, oxidizing agents, and biocides.

7. Semiconductor wafer polishing composition according to claim 1, characterized in that a silicon carbide (SiC) material removal rate varies from 1.3 pm / h to 8.2 pm / h.

8. Semiconductor wafer polishing composition according to claim 7, characterized in that the material removal rate from SiC varies from 1.3 pm / h to 7.2 pm / h.

9. Semiconductor wafer polishing composition according to claim 8, characterized in that the material removal rate from SiC varies from 1.3 pm / h to 3.3 pm / h.

10. Semiconductor wafer polishing composition according to claim 8, characterized in that the material removal rate from SiC varies from 3.3 pm / h to 7.2 pm / h.

11. Semiconductor wafer polishing composition according to claim 7, characterized in that the SiC material removal rate varies from 3.3 pm / h to 8.2 pm / h. Petition 870260023555, dated 03 / 13 / 2026, pp. 68 / 72 3 / 5 12. Semiconductor wafer polishing composition according to claim 11, characterized in that the SiC material removal rate varies from 7.2 μm / ha to 8.2 μm / h.

13. Semiconductor wafer polishing composition according to claim 1, characterized in that surface-modified monocrystalline diamond is present in a weight of 0.5 percent by weight (% by weight) to 5 percent by weight based on the total weight of the polishing composition.

14. Semiconductor wafer polishing composition according to claim 13, characterized in that surface-modified monocrystalline diamond is present in a weight of 0.5% to 2.5% based on the total weight of the polishing composition.

15. Semiconductor wafer polishing composition according to claim 1, characterized in that the vehicle is present in a volume of 10% to 70% based on the total volume of the polishing composition.

16. Semiconductor wafer polishing composition according to claim 7, characterized in that the SiC is monocrystalline SiC.

17. Semiconductor wafer polishing composition according to claim 1, characterized in that the surface-modified monocrystalline diamond comprises one or more peaks and one or more depressions.

18. Semiconductor wafer polishing composition, according to claim 1, characterized in that Petition 870260023555, dated 03 / 13 / 2026, pp. 69 / 72 4 / 5, the semiconductor wafer polishing composition excludes potassium permanganate.

19. Method for polishing a semiconductor wafer surface, characterized in that it comprises: contacting the semiconductor wafer surface with a polishing pad applied to a polishing composition comprising a surface-modified monocrystalline diamond with a particle size D(50) ranging from 0.10 pm to 1 pm, a surface roughness of 0.50 to 0.80, and a sphericity less than 0.70, a vehicle selected from the group consisting of water-based vehicles, glycol-based vehicles, oil-based vehicles, and hydrocarbon-based vehicles, and optionally one or more additives; moving the polishing pad applied to the polishing composition relative to the semiconductor wafer; and abrading at least a portion of the semiconductor wafer to polish the semiconductor wafer.

20. A method for polishing the surface of a semiconductor wafer, according to claim 19, characterized in that the removal rate of silicon carbide (SiC) material varies from 1.3 pm / h to 8.2 pm / h.

21. Method for polishing the surface of a semiconductor wafer, according to claim 20, characterized in that the material removal rate from the SiC varies from 1.3 pm / h to 7.2 pm / h.

22. Method for polishing a semiconductor wafer surface, according to claim 21, characterized by the fact that the material removal rate from the SiC varies from 1.3 μm / ha to 3.3 μm / h.

23. Method for polishing the surface of a semiconductor wafer, according to claim 21, characterized in that the material removal rate from the SiC varies from 3.3 μm / h to 7.2 μm / h.

24. Method for polishing the surface of a semiconductor wafer, according to claim 20, characterized in that the material removal rate from the SiC varies from 3.3 qm / h to 8.2 qm / h.

25. Method for polishing the surface of a semiconductor wafer, according to claim 24, characterized in that the material removal rate from the SiC varies from 7.2 qm / ha to 8.2 qm / h.

26. Method for polishing the surface of a semiconductor wafer, according to claim 20, characterized in that the SiC is monocrystalline SiC. Petition 870260023555, dated 03 / 13 / 2026, pp. 71 / 72

Images