Light-emitting device

Description

1 / 86 LIGHT-EMITTING DEVICE Field of Application

[001] The present invention relates to a light-emitting apparatus and a display apparatus including the same, and more particularly to a light-emitting apparatus including a light-emitting device and a display apparatus including the same. State of the art

[002] In recent years, nitride semiconductors have been widely used as base material for light-emitting devices, such as light-emitting diodes. Because nitride semiconductors can have various energy ranges depending on the composition ratio of group III elements, it is possible to produce light in various wavelength ranges by controlling the composition of elements such as Al, Ga, In and the like.

[003] A multiquantum well (MQW) structure can be used as an active layer structure and the emission wavelengths of a light-emitting device can be determined according to the composition ratio of nitride semiconductors in the well layers of the multiquantum well structure.

[004] Typically, light-emitting diodes can be used in the form of a light-emitting diode package in which a light-emitting diode chip is mounted on a substrate, such as a printed circuit board (PCB) and the like, which includes an interconnect layer and an insulating layer. General Description of the Invention Petition 870250108390, dated 11 / 26 / 2025, page 7 / 119 2 / 86 Technical Problem

[005] The embodiments of the present invention provide a light-emitting apparatus and a display apparatus including the same, which can improve the luminous intensity by improving the light extraction efficiency and can improve the color contrast to obtain a sharp image. Technical Solution

[006] According to one aspect of the present invention, a light-emitting apparatus (100) includes a substrate (110), at least one light-emitting device (120) disposed on a surface of the substrate (110) and a molding layer (130) covering at least one region of the light-emitting device (120).

[007] The light-emitting apparatus (100) may also include a first microelement (140) disposed above the light-emitting apparatus (120).

[008] The first microelement (140) may include a curved surface (U) formed in at least one region of at least one of an upper surface and a lower surface of the same.

[009] In one embodiment, the first microelement (140) may include a plurality of guide portions (242) corresponding to an upper portion of the light-emitting device (120) and forming the curved surface (U).

[010] In one embodiment, the first microelement (140) may also include a connecting portion (244) connecting adjacent guide portions (242) to each other.

[011] According to another aspect of the present invention, a Petition 870250108390, dated 11 / 26 / 2025, p. 8 / 119 3 / 86 light-emitting apparatus (100) includes a substrate (110), a plurality of light-emitting devices (120) arranged on a surface of the substrate (110), a first microelement (140) arranged above the plurality of light-emitting devices (120) and a light control layer (270, 280, 290) arranged between adjacent light-emitting devices (120), wherein the first microelement (140) may include a curved surface (U) formed in at least one region of at least one of an upper surface and a lower surface thereof.

[012] According to a further aspect of the present invention, a light-emitting apparatus (100) includes a substrate (110), a plurality of light-emitting devices (120) arranged on a surface of the substrate (110), a first microelement (140) arranged above the plurality of light-emitting devices (120) and a collimator (135) arranged between the upper surfaces of the light-emitting devices (120) and a lower surface of the first microelement (140) and including a curved surface (U), wherein an upper surface of the first microelement (140) may be a flat surface (F). Advantageous effects

[013] The embodiments of the present invention provide a light-emitting apparatus and a display apparatus including the same, which can improve the luminous intensity by improving the light extraction efficiency and can improve the color contrast to provide a sharp image. Description of the Figures

[014] FIG. 1 is a schematic plan view of a device Petition 870250108390, dated 11 / 26 / 2025, p. 9 / 119 4 / 86 light emitter according to an embodiment of the present invention.

[015] FIG. 2A is a cross-sectional view taken along line II' of FIG. 1.

[016] FIG. 2B is a cross-sectional view taken along line II-II' of FIG. 1.

[017] FIG. 3 is a cross-sectional view of a light-emitting apparatus according to an embodiment of the present invention.

[018] FIG. 4 is a cross-sectional view of a light-emitting apparatus according to another embodiment of the present invention.

[019] FIG. 5A and FIG. 5B are sectional views of a light-emitting apparatus according to another embodiment of the present invention.

[020] FIGS. 6A, 6B and 6C are plan views of light-emitting apparatus according to embodiments of the present invention.

[021] FIG. 7 is a cross-sectional view of a light-emitting apparatus according to another embodiment of the present invention.

[022] FIG. 8 is a cross-sectional view of a light-emitting apparatus according to another embodiment of the present invention.

[023] FIG. 9 is a cross-sectional view of a light-emitting apparatus according to another embodiment of the present invention.

[024] FIG. 10 is a cross-sectional view of a light-emitting apparatus according to another embodiment of the present invention.

[025] FIG. 11 is a cross-sectional view of a light-emitting apparatus according to another embodiment of the present invention.

[026] FIG. 12 is a cross-sectional view of a device that emits Petition 870250108390, dated 11 / 26 / 2025, page 10 / 119 5 / 86 light according to another embodiment of the present invention.

[027] FIG. 13 is a cross-sectional view of a light-emitting apparatus according to another embodiment of the present invention.

[028] FIG. 14 is a plan view of a light-emitting apparatus according to another embodiment of the present invention.

[029] FIG. 15 is a cross-sectional view of a light-emitting apparatus according to another embodiment of the present invention.

[030] FIG. 16 is a cross-sectional view of a light-emitting apparatus according to another embodiment of the present invention.

[031] FIG. 17 is a cross-sectional view of a light-emitting apparatus according to another embodiment of the present invention.

[032] FIG. 18 is a cross-sectional view of a light-emitting apparatus according to another embodiment of the present invention.

[033] FIG. 19 is a cross-sectional view of a light-emitting apparatus according to another embodiment of the present invention.

[034] FIG. 20 is a cross-sectional view of a light-emitting apparatus according to another embodiment of the present invention.

[035] FIG. 21 is a cross-sectional view of a light-emitting apparatus according to another embodiment of the present invention.

[036] FIG. 22 is a cross-sectional view of a light-emitting apparatus according to another embodiment of the present invention.

[037] FIGS. 23A, 23B, 23C, 23D are a plan view and perspective views of various display devices according to exemplary embodiments of the present invention. Preferred Modality The present invention can be modified in various ways and Petition 870250108390, dated 11 / 26 / 2025, p. 11 / 119 6 / 86 realized in many different forms, and therefore specific embodiments will be exemplified in the figures and described in detail below. However, in the following description, for explanatory purposes, several specific details are presented in order to provide a complete understanding of various exemplary embodiments or implementations of the present invention. As used herein, embodiments and implementations are interchangeable terms for non-limiting examples of devices or methods employing one or more of the inventive concepts disclosed herein. It will be evident, however, that various exemplary embodiments can be practiced without these specific details or with one or more equivalent arrangements. In other cases, known structures and devices are shown in block diagram form to avoid unnecessarily obscuring various exemplary embodiments.Furthermore, various exemplary modalities may differ, but need not be mutually exclusive. For example, specific forms, configurations, and characteristics of one exemplary modality may be used or implemented in another exemplary modality without departing from the inventive concepts.

[038] Unless otherwise specified, the exemplary embodiments illustrated should be understood as providing exemplary features of varying details of some ways in which the inventive concepts can be implemented in practice. Therefore, unless otherwise specified, the features, components, modules, layers, films, panels, regions and / or aspects (hereinafter individually or collectively referred to as elements) of the various embodiments can be combined, separated, exchanged and / or rearranged without Petition 870250108390, dated 11 / 26 / 2025, page 12 / 119 7 / 86 move away from inventive concepts.

[039] The use of cross-hatching and / or shading in the attached figures is generally provided to clarify the boundaries between adjacent elements. Thus, neither the presence nor the absence of cross-hatching or shading conveys or indicates any preference for or requirement of specific materials, material properties, dimensions, proportions, similarities between illustrated elements, and / or any other characteristic, attribute, and property of the elements, unless specified. Furthermore, in the attached figures, the size and relative size of the elements may be exaggerated for clarity and / or descriptive purposes. When an exemplary embodiment is implemented differently, a specific process order may be performed differently from the order described. For example, two processes described consecutively may be performed substantially simultaneously or performed in an order opposite to the order described.Furthermore, similar reference numbers denote similar elements.

[040] When an element or layer is referred to as being in, “connected to,” or “coupled to” another element or layer, it may be directly in, connected to, or coupled to another element or layer, or intervening elements or layers may be present. When, however, an element or layer is referred to as directly in, directly connected to, or directly coupled to another element or layer, there are no intervening elements or layers present. For this purpose, the term “connected” may refer to physical, electrical, and / or fluid connections, with or without intervening elements. Furthermore, the DR1 axis, the DR2 axis, and the DR3 axis are not limited to the three axes of a system of Petition 870250108390, dated 11 / 26 / 2025, page 13 / 119 8 / 86 rectangular coordinates, such as x, y, and z axes, can be interpreted in a broader sense. For example, the DR1 axis, the DR2 axis, and the DR3 axis may be perpendicular to each other or may represent different directions that are not perpendicular to each other. For the purposes of this invention, at least one of X, Y, and Z and at least one selected from the group consisting of X, Y, and Z may be interpreted as only X, only Y, only Z, or any combination of two or more of X, Y, and Z, such as, for example, XYZ, XYY, YZ, and ZZ. As used herein, the term and / or includes any and all combinations of one or more of the associated listed items.

[041] Although the terms “first, second” or similar may be used here to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another element. Thus, a first element discussed below could be called a second element without departing from the teachings of the invention.

[042] Spatially relative terms, such as underneath, below, under, inferior, above, superior, over, higher, lateral (e.g., as in side wall) or similar, may be used herein for descriptive purposes and thus to describe the relationship of one element to another element(s), as illustrated in the figures. Spatially relative terms are intended to encompass different orientations of a device in use, operation and / or manufacture, in addition to the orientation represented in the figures. For example, if the device in the figures is turned upside down, elements described as below or underneath other elements or features will be oriented above the other elements or features. Thus, the exemplary term below Petition 870250108390, dated 11 / 26 / 2025, page 14 / 119 9 / 86 can encompass an up and down orientation. Furthermore, the device can be oriented in another way (e.g., rotated 90 degrees or in other orientations) and, as such, the spatially relative descriptors used here can also be interpreted appropriately.

[043] The terminology used in this document is intended to describe particular modalities and is not intended to be limiting. As used in this document, the singular forms a, an and the are also intended to include the plural forms, unless the context clearly indicates otherwise. In addition, the terms includes, including, include and / or including, when used in this specification, specify the presence of declared features, integers, steps, operations, elements, components and / or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof.Note also that, as used in this document, the terms substantially, about, and other similar terms are used as terms of approximation and not as terms of degree and, as such, are used to account for inherent deviations in measured, calculated, and / or provided values ​​that would be recognized by a person skilled in the art.

[044] Several exemplary embodiments are described herein with reference to sectional and / or exploded illustrations which are schematic illustrations of idealized exemplary embodiments and / or intermediate structures. As such, variations in the forms of the illustrations are expected as a result of, for example, manufacturing techniques and / or tolerances. Thus, exemplary embodiments disclosed in this document should not necessarily be interpreted as limited to Petition 870250108390, dated 11 / 26 / 2025, p. 15 / 119 10 / 86 particular illustrated forms of the regions, but should include deviations in the forms that result, for example, from manufacturing. In this way, the regions illustrated in the figures may be schematic in nature and the forms of these regions may not reflect the actual forms of the regions of a device and, as such, are not necessarily intended to be limiting.

[045] As is customary in the field, some exemplary embodiments are described and illustrated in the attached figures in terms of functional blocks, units, and / or modules. Experts in the field will recognize that these blocks, units, and / or modules are physically implemented by electronic (or optical) circuits, such as logic circuits, discrete components, microprocessors, wired circuits, memory elements, wiring connections, or the like, which may be formed using semiconductor-based fabrication techniques or other fabrication technologies. In the case of blocks, units, and / or modules being implemented by microprocessors or other similar hardware, they may be programmed and controlled using software (e.g., microcode) to perform various functions discussed herein and may optionally be driven by firmware and / or software.It is also contemplated that each block, unit, and / or module can be implemented by dedicated hardware, or as a combination of dedicated hardware to perform some functions and a processor (e.g., one or more programmed microprocessors and associated circuits) to perform other functions. Furthermore, each block, unit, and / or module of some exemplary embodiments can be physically separated into two or more interactive and discrete blocks, units, and / or modules without departing from the scope of the inventive concepts. In addition, the blocks, units, and / or... Petition 870250108390, dated 11 / 26 / 2025, page 16 / 119 11 / 86 modules of some exemplary embodiments can be physically combined into more complex blocks, units and / or modules without departing from the scope of the inventive concepts.

[046] Unless defined otherwise, all terms (including technical and scientific terms) used herein have the same meaning commonly understood by a person skilled in the field to which this invention relates. Terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and should not be interpreted in an ideal or overly formal manner unless expressly defined herein.

[047] One embodiment of the present invention provides a light-emitting apparatus 100 including a substrate 110, at least one light-emitting device 120 disposed on a surface of the substrate 110 and a molding layer 130 covering at least one region of the light-emitting device 120. Hereafter, embodiments of the present invention will be described in more detail with reference to the accompanying figures.

[048] The light-emitting device 120 can be a light-emitting diode including a substrate 11 and a light-emitting structure 12 arranged on the substrate 11.

[049] Referring to FIG. 1, the light-emitting device 120 can be formed by unifying a plurality of light-emitting structure matrices 12 formed on the substrate 11. The light-emitting device 120 can be mounted on a circuit board 110 to form the light-emitting apparatus 100, which will be described below.

[050] Substrate 11 is a growth substrate in which Petition 870250108390, dated 11 / 26 / 2025, page 17 / 119 12 / 86 Nitride semiconductors can be grown and may include, for example, a heterogeneous substrate such as a sapphire substrate, a gallium arsenide substrate, a silicon substrate, a silicon carbide substrate or a spinel substrate, and may also include a homogeneous substrate such as a gallium nitride substrate, an aluminum nitride substrate and the like. The substrate 11 can be removed after the growth of the semiconductor layers.

[051] The substrate 11 may include a light-transmitting insulating material to transmit light. However, it should be understood that the present invention is not limited to this. Alternatively, the substrate 11 may be translucent or partially transparent to transmit only light with certain wavelengths or to transmit only a fraction of light with certain wavelengths.

[052] The area of ​​the substrate 11 can define an area of ​​the light-emitting device 100. In one embodiment, the substrate 11 can have the same area or greater than the light-emitting structure 12.

[053] Substrate 11 may have an area of ​​approximately 60,000 pm2 or less, specifically 30,000 pm2, more specifically 10,000 pm2 or less. Substrate 11 may have a thickness of 30 pm to 180 pm, specifically 30 pm to 100 pm.

[054] In one embodiment, the substrate 11 may have an area of ​​225 χ 225 pm2 and a thickness of 50 pm. As the area-to-thickness ratio of the substrate 11 decreases, the rate of light extracted in a horizontal direction to a back surface of the substrate 11, i.e., through a side surface thereof, may be reduced and the rate of light extracted from it in a direction perpendicular to the back surface may be reduced. Petition 870250108390, dated 11 / 26 / 2025, p. 18 / 119 13 / 86 of the substrate 11 can be increased relative to the total amount of light extracted from the light-emitting device 120. In particular, as the thickness of the substrate 11 is reduced, the light emitted by the light-emitting structure 12 can be better emitted in the direction perpendicular to the back surface of the substrate 11. Consequently, the light-emitting device 120 can alleviate color differences depending on the viewing angle, reducing the deviation of the light extracted from the light-emitting device 120.

[055] The light-emitting structure 12 is a light-emitting diode arranged on the substrate 11 and can have various configurations.

[056] For example, the light-emitting structure 12 may be a stacked light-emitting diode, including the first to third light-emitting stacks 2, 3, 4, as shown in FIGS. 1 to FIGS. 2B. In this embodiment, the light-emitting device 120 may include a first connecting electrode 20ce, a second connecting electrode 30ce, a third connecting electrode 40ce and a fourth connecting electrode 50ce formed in the first and third light-emitting stacks 2, 3, 4 and a protective layer 90 surrounding the connecting electrodes 20ce, 30ce, 40ce, 50ce.

[057] The first, second and third light-emitting cells 2, 3, 4 can emit light with different peak wavelengths. Specifically, the light emitted by the first light-emitting cell 2 can pass through the second and third light-emitting cells 3, 4.

[058] A light-emitting stack 2, 3, or 4 placed away from substrate 11 can emit light with a longer wavelength than a light-emitting stack 2, 3, or 4 close to substrate 11, thus reducing light loss. For example, the Petition 870250108390, dated 11 / 26 / 2025, page 19 / 119 14 / 86 The first light-emitting cell 2 can emit light with a longer wavelength than the second and third light-emitting cells 3 and 4, and the second light-emitting cell 3 can emit light with a longer wavelength than the third light-emitting cell 4. Specifically, the first light-emitting cell 2 can emit red light, the second light-emitting cell 3 can emit green light, and the third light-emitting cell 4 can emit blue light.

[059] In another embodiment, to adjust a color mixing ratio of the first, second and third light-emitting cells 2, 3, 4, the second light-emitting cell 3 can emit light with a shorter wavelength than the third light-emitting cell 4. Consequently, the luminous intensity of the second light-emitting cell 3 can be reduced, the luminous intensity of the third light-emitting cell 4 can be increased, and the luminous intensity ratio of the light emitted by the first, second and third light-emitting cells 2, 3, 4 can be controlled.

[060] For example, the first light-emitting cell 2 can be configured to emit red light, the second light-emitting cell 3 can be configured to emit blue light, and the third light-emitting cell 4 can be configured to emit green light. Consequently, the luminous intensity of the blue light can be relatively reduced and the luminous intensity of the green light can be relatively increased. Thus, the luminous intensity ratio of the red, green, and blue light can be adjusted to approximately 3:6:1.

[061] Furthermore, the first, second and third light-emitting cells 2, 3, 4 may have a light-emitting area of ​​10,000 pm2 or less, specifically 4,000 pm2, more Petition 870250108390, dated 11 / 26 / 2025, page 20 / 119 15 / 86 specifically 2,500 pm2 or less. Furthermore, the light emission area can be increased by decreasing the distance to the substrate 11 and the luminous intensity of the green light can be further increased by arranging the third light-emitting stack 4 configured to emit green light in a location closer to the substrate 11.

[062] Although the light-emitting device 120 including three light-emitting batteries 2, 3, 4 is illustrated, the present invention is not limited to a specific number of light-emitting batteries. For example, in some embodiments, the light-emitting device 120 may include two or more light-emitting batteries. Here, the light-emitting device 120 including three light-emitting batteries 2, 3, 4 according to the embodiment will be described by way of example.

[063] In the following description, the second light-emitting cell 3 will be described as emitting light of a shorter wavelength, for example, blue light, than the third light-emitting cell 4. However, it should be noted that the second light-emitting cell 3 may emit light of a longer wavelength, such as green light, than the third light-emitting cell 4.

[064] The first light-emitting battery 2 may include a first LED battery 20 and a first upper contact electrode 25p, and may also include a first lower contact electrode 21n.

[065] The first LED stack 20 may include a first semiconductor layer of conductivity type 21, an active layer 23 and a second semiconductor layer of conductivity type 25. According to one embodiment, the first LED stack 20 may include a semiconductor material that emits red light, for example, AlGaAs, GaAsP, AlGalnP and GaP, Petition 870250108390, dated 11 / 26 / 2025, p. 21 / 119 16 / 86 without being limited to these.

[066] The first top contact electrode 25p forms an ohmic contact with the second semiconductor layer of conductivity type 25. The first top contact electrode 25p can be formed from a transparent conductive oxide, for example, indium tin oxide (ITO), but is not limited to these. Alternatively, for example, the first top contact electrode 25p can also be a metallic layer capable of forming an ohmic contact with the second semiconductor layer of conductivity type 25. The first top contact electrode 25p can be formed, for example, from ITO with a thickness of 200 nm to 400 nm.

[067] The first lower contact electrode 21n can be arranged in the first conductivity-type semiconductor layer 21 and can form ohmic contact with the first conductivity-type semiconductor layer 21. The first upper contact electrode 25p, the active layer 23 and the second conductivity-type semiconductor layer 25 can be patterned to expose an upper surface of the first conductivity-type semiconductor layer 21. The first lower contact electrode 21n can be formed on the exposed upper surface of the first conductivity-type semiconductor layer 21.

[068] The first lower contact electrode 21n may have a single-layer or multi-layer structure and may include Al, Ti, Cr, Ni, Au, Ag, Sn, W, Cu or alloys thereof, for example, Au-Te alloys or Au-Ge alloys, without being limited to these.

[069] In this embodiment, the first semiconductor layer of conductivity 21 type can be placed closer to the substrate. Petition 870250108390, dated 11 / 26 / 2025, p. 22 / 119 17 / 86 than the second semiconductor layer of conductivity type 25. The light generated by the active layer 23 can be emitted through the first semiconductor layer of conductivity type 21 towards the substrate 11. As the light generated by the first light-emitting stack 2 is emitted outwards through the second light-emitting stack 3 and the third light-emitting stack 4, light loss may occur.

[070] In this embodiment, the first semiconductor layer of conductivity type 21 may include a rough surface 21r, which may improve the extraction efficiency of the light generated by the active layer 23. A recessed portion of the rough surface 21r may have a depth D in the range of about 0.1 pm to 0.9 pm. The rough surface 21r may be disposed facing the substrate 11 and may come into contact with an adhesive layer 61. The rough surface 21r may be formed by wet or dry etching and the protrusions or depressions may have a lateral tilt angle in the range of 35 degrees to 65 degrees.

[071] Furthermore, as will be described below, a second insulating layer 83 may include a distributed Bragg reflector (DBR) and may act to increase the emission luminance of the first light-emitting stack 2 by reflecting the light generated by the active layer 23. The DBR of the second insulating layer 83 may be formed to have a high reflectivity of about 80% or more with respect to light in the wavelength range of 600 nm to 650 nm.

[072] The second light-emitting cell 3 may include a second LED cell 30 and a second lower contact electrode 35p, and may also include a second upper contact electrode 31n. Petition 870250108390, dated 11 / 26 / 2025, page 23 / 119 18 / 86

[073] The second LED stack 30 may include a first conductivity-type semiconductor layer 31, an active layer 33, and a second conductivity-type semiconductor layer 35. In one embodiment, the second LED stack 30 may include a blue light-emitting semiconductor material, for example, GaN, InGaN, ZnSe, or similar, without being limited to these. The second lower contact electrode 35p may be disposed under the second conductivity-type semiconductor layer 35 of the second LED stack 30 and may form ohmic contact with the second conductivity-type semiconductor layer 35. The second lower contact electrode 35p may be formed of a light-transparent material, for example, red light and blue light, generated by the first light-emitting stack 2 and the third light-emitting stack 3, and may be formed of a transparent conductive oxide, for example, ITO or ZnO.The second lower contact electrode 35p can be formed, for example, from ITO with a thickness of 200 nm to 400 nm.

[074] In this embodiment, the first semiconductor layer of conductivity type 31 of the second LED stack 30 can be arranged so as to face the first semiconductor layer of conductivity type 21 of the first LED stack 20. Thus, an upper surface of the first semiconductor layer of conductivity type 31 can be exposed independently of the active layer 33 and the second semiconductor layer of conductivity type 35, and the second upper contact electrode 31n can be formed on the exposed surface of the first semiconductor layer of conductivity type 31. The second upper contact electrode 31n can be omitted.

[075] The third light-emitting battery 4 may include a third LED battery 40 and a third contact electrode. Petition 870250108390, dated 11 / 26 / 2025, p. 24 / 119 19 / 86 upper 45p, and may also include a third lower contact electrode 41n.

[076] The third LED stack 40 may include a first conductivity-type semiconductor layer 41, an active layer 43, and a second conductivity-type semiconductor layer 45. In one embodiment, the third LED stack 40 may include a semiconductor material that emits green light, for example, GaN, InGaN, GaP, AlGaInP, AlGaP, or the like. The third top contact electrode 45p may be arranged in the second conductivity-type semiconductor layer 45 of the third LED stack 40 and may form an ohmic contact with the second conductivity-type semiconductor layer 45. The third top contact electrode 45p may be formed of a light-transparent material, for example, red light and blue light, generated by the first light-emitting stack 2 and the third light-emitting stack 3, and may be formed of a transparent conductive oxide, for example, ITO or ZnO.The third upper contact electrode 45p can be formed, for example, from ITO with a thickness of 200 nm to 400 nm.

[077] In this embodiment, the second semiconductor layer of conductivity type 45 of the third LED stack 40 faces the second semiconductor layer of conductivity type 35 of the second LED stack 30. That is, the second LED stack 30 and the third LED stack 40 are arranged so that the second semiconductor layers of conductivity type 35, 45 with the same polarity face each other. The second LED stack 30 and the first LED stack 20 are also arranged so that the first semiconductor layers of conductivity type 21, 31 with the same polarity face each other. Petition 870250108390, dated 11 / 26 / 2025, p. 25 / 119 20 / 86

[078] In embodiments of the present invention, each of the first semiconductor layers of conductivity type 21, 31, 41 and of the second semiconductor layers of conductivity type 25, 35, 45 of the first, second and third LED stacks 20, 30, 40 may have a monolayer structure or a multilayer structure and may include superlattice layers. Furthermore, the active layers 23, 33, 43 of the first, second and third LED stacks 20, 30, 40 may have a single quantum well structure or a multi-quantum well structure.

[079] The total thickness of the first light-emitting stack 2 to the third light-emitting stack 4, including the first, second and third LED stacks 20, 30, 40, may vary, for example, from about 10 pm to about 30 pm. Preferably, the total thickness of the first to third light-emitting stacks varies from about 15 pm to about 25 pm, more preferably from about 18 pm to about 22 pm, without being limited to them.

[080] In general, the substrate 11 may be thicker than the total thickness of the first, second, and third light-emitting stacks 2, 3, 4. In one embodiment, the ratio between the thickness of the substrate 11 and the total thickness of the first, second, and third light-emitting stacks 2, 3, 4 may be in the range of 1.5:1 to 6:1, specifically 1.5:1 to 4:1, more specifically 2.27:1 to 2.78:1. As the thickness ratio decreases, i.e., as the ratio of the thickness of the substrate 11 to the total thickness of the first, second, and third light-emitting stacks 2, 3, 4 decreases, the ratio of light extracted through the lateral surface of the substrate 11 to the light emitted by the light-emitting device 120 decreases, and the ratio of light extracted through the substrate 11 in the direction perpendicular to the posterior surface decreases. Petition 870250108390, dated 11 / 26 / 2025, p. 26 / 119 21 / 86 of substrate 11 increases. Consequently, light-emitting device 120 can alleviate a color difference depending on the viewing angle, reducing a difference in the light emission patterns extracted from light-emitting device 100.

[081] The thickness of substrate 11 may be greater than the total thickness of the first, second, and third LED stacks 20, 30, 40, or it may be greater than the thickness of a region of the protective layer 90 located between the connecting electrodes 20ce, 30ce, 40ce, 50ce and vertically overlapping the first, second, and third LED stacks 20, 30, 40. Furthermore, the thickness of substrate 11 may also be thinner than the thickness of a region of the protective layer 90 surrounding the outermost lateral surface of the connecting electrodes 20ce, 30ce, 40ce, 50ce. This structure may provide an effective improvement in light deflection depending on the viewing angle.

[082] Each of the first 25p top contact electrodes, second 35p bottom contact electrodes and third 25p, 35p, 45p top contact electrodes may include a transparent conductive material that transmits light. For example, the 25p, 35p, 45p contact electrodes may be formed of a transparent conductive oxide (TCO). The transparent conductive oxide (TCO) may include, but is not limited to, SnO, InO2, ZnO, ITO, ITZO and the like.

[083] A first link layer 61 can be arranged between the first LED stack 20 and the second LED stack 30, and a second link layer 63 can be arranged between the second LED stack 30 and the third LED stack 40. The first link layer 61 can join the first semiconductor layer Petition 870250108390, dated 11 / 26 / 2025, p. 27 / 119 22 / 86 of conductivity type 21 of the first LED stack 20 and the first semiconductor layer of conductivity type 31 of the second LED stack 30. The first bonding layer 61 may include regions with different thicknesses, i.e., a thick region and a thin region. The second bonding layer 61 may have a thickness less than the maximum thickness of the thick region of the first bonding layer 61 and greater than the minimum thickness of the thin region.

[084] The second bonding layer 63 can be formed with a thickness of, for example, 1.8 pm to 2.2 pm. The first and second bonding layers 61, 63 can include a non-conductive material that transmits light. For example, the first and second bonding layers 61, 63 can include optically transparent adhesives (OCAs), for example, epoxy, silicone, polyimide, SU8, spin-on-glass (SOG) and benzocyclobutene (BCB), but are not limited to these. The first bonding layer 61 and the second bonding layer 63 need not be identical to each other and can be formed from different materials, for example, materials with different refractive indices, melting points or transmittances.

[085] A first strain relief layer 51 can be arranged on the second bonding layer 63 to be placed between the second bonding layer 63 and the second LED stack 30. A second strain relief layer 53 can be arranged under the second bonding layer 63 and can be placed between the second bonding layer 63 and the third LED stack 40. Each of the first and second strain relief layers 51, 53 can be formed with a thickness of, for example, 50 nm to 150 nm. The first and second strain relief layers 51, 53 can include an insulating material. For example, the first and second relief layers of Petition 870250108390, dated 11 / 26 / 2025, p. 28 / 119 23 / 86 voltages 51, 53 may include organic or inorganic insulating materials, for example, polyimides, SiO2, SiNx and Al2Os, for example, SiO2, but are not limited to these.

[086] The first and second stress relief layers 51, 53 can be placed between the LED stacks when the first, second, and third LED stacks 20, 30, 40 are stacked vertically. More specifically, the substrate 11 can bend during the sequential gluing of the second LED stack 30 and the first LED stack 20 onto the third LED stack 40, causing cracks between the LED stacks 20, 30, 40. The first and second stress relief layers 51, 53 between the LED stacks 20, 30, 40 can alleviate the bending of the substrate 11, thus preventing defects such as cracks between the LED stacks 20, 30, 40.

[087] The first insulating layer 81 and the second insulating layer 83 may be arranged on at least part of the top and side surfaces of the first, second and third LED stacks 20, 30, 40. At least one of the first and second insulating layers 81, 83 may include various organic or inorganic insulating materials, for example, polyimide, SiO2, SiNx, Al2Os or the like. In addition, at least one of the first and second insulating layers 81, 83 may include a single-layer structure or a multi-layer structure, and may include a distributed Bragg reflector (DBR) as an example of the multi-layer structure. In one embodiment, the first insulating layer 81 may be formed of SiO2 and the second insulating layer 83 may be a distributed Bragg reflector (DBR). The first insulating layer 81 can be thinner than the second insulating layer 83 and can have a thickness of, for example, about 0.4 pm. The second insulating layer 83 can have a thickness of about 1.5 pm to 3 pm. Petition 870250108390, dated 11 / 26 / 2025, p. 29 / 119 24 / 86

[088] The distributed Bragg reflector (DBR) of the second insulating layer 83 may include first layers of material with a first refractive index and second layers of material with a second refractive index. The first layers of material may have a low refractive index and the second layers of material may have a high refractive index. “Low refractive index” and “high refractive index” represent a difference in refractive index relative to the first layers of material and the second layers of material. In one embodiment, the first layers of material may be SiO2 layers and the second layers of material may be TiO2 layers. The SiO2 of the first layers of material has a refractive index of about 1.47 and the TiO2 of the second layers of material has a refractive index of about 2.41. However, in the present invention, the first layers of material and the second layers of material are not limited to SiO2 and TiO2.For example, the first and second layers of material can be formed from Si3N4, MgF2, Nb2Os, ZnS, ZrO2, ZnO, compound semiconductors, or similar materials. However, the difference in refractive index between the first and second layers of material can be greater than 0.5.

[089] The distributed Bragg reflector (DBR) can be formed by repeatedly stacking pairs of first and second layers of material multiple times. Generally, layers of material with a high refractive index have a higher absorption rate than layers of material with a low refractive index. Thus, it is possible to reduce light loss due to light absorption by forming the second layers of material with a high refractive index in a smaller optical thickness than the first layers of material with a low refractive index. Petition 870250108390, dated 11 / 26 / 2025, page 30 / 119 25 / 86 Consequently, each of the first layers of material, that is, the SiO2 layers, can be formed with a greater thickness than each of the second layers of material, that is, the TiO2 layers.

[090] Furthermore, the first and last layers of the distributed Bragg reflector (DBR) can be SiO2 layers. The SiO2 layer used as the first layer of the distributed Bragg reflector (DBR) can strengthen the adhesion to the first insulating layer 81 and the SiO2 layer used as the last layer can protect the distributed Bragg reflector (DBR) while strengthening the adhesion to the protective layer 90 and to the connecting electrodes 20ce, 30ce, 40ce, 50ce described below.

[091] According to one embodiment, the distributed Bragg reflector (DBR) applied to the second insulating layer 83 may have a reflectivity of 80% or more, specifically 90% or more, more specifically 95% or more in the wavelength range of 600 nm to 650 nm and therefore may reflect the light emitted by the light-emitting device 120, particularly the light emitted by the first light-emitting stack 2, with high reflectivity. The distributed Bragg reflector (DBR) may include, for example, 16 to 25 pairs of the first and second layers of material, without being limited to them. The distributed Bragg reflector may have a thickness of 1.5 pm to 3 pm. The distributed Bragg reflector (DBR) may have a reflectivity of 90% or more in the wavelength range of 410 nm to 700 nm.

[092] The second insulating layer 83 can improve light extraction efficiency by reflecting the light emitted by the first, second, and third LED stacks 20, 30, 40. In addition, the distributed Bragg reflector (DBR), composed of multiple Petition 870250108390, dated 11 / 26 / 2025, p. 31 / 119 26 / 86 layers, can form a light cavity to improve the rectitude of extracted light, while reducing deviation in the emission patterns of blue, green and red light to alleviate a color difference depending on the viewing angle.

[093] The first insulating layer 81 can be etched to form 20CH, 30CH, 40CH, 50CH contact holes described below. The first insulating layer 81 can be formed as a SiO2 monolayer to facilitate an etching process. Thus, it is possible to ensure a uniform thickness of the distributed Bragg reflector without damaging the lower 25p, 35p, 45p contact electrodes under the first insulating layer 81, thus maintaining stable electrical properties. Furthermore, the distributed Bragg reflector (DBR) of the second insulating layer 83 can cause diffuse reflection of the extracted light through the lateral surfaces of the first, second and third light-emitting cells 2, 3, 4, thus improving the efficiency of light extraction.

[094] When the first insulating layer 81 is formed by a dielectric layer with a low refractive index, such as SiO2, the first insulating layer 81 can constitute an omnidirectional reflector together with the first to third LED stacks 20, 30, 40 and the electrode pads 20pd, 30pc, 40pd, 50pd covering the first insulating layer 81.

[095] Each of the first, second, and third LED stacks 20, 30, 40 can be driven independently. In one embodiment, a common voltage can be applied to the first semiconductor layers of conductivity type 21, 31, 41 of the first, second, and third LED stacks 20, 30, 40 and an individual light emission signal can be applied to each. Petition 870250108390, dated 11 / 26 / 2025, p. 32 / 119 27 / 86 one of the second semiconductor layers of conductivity type 25, 35, 45. In other embodiments, an individual light emission signal can be applied to each of the first semiconductor layers of conductivity type 21, 31, 41 of the first, second and third LED stacks 20, 30, 40 and a common voltage can be applied to the second semiconductor layers of conductivity type 25, 35, 45. For example, the first semiconductor layers of conductivity type 21, 31, 41 of the LED stacks 20, 30, 40 can be of type ne and the second semiconductor layers of conductivity type 25, 35, 45 can be of type p. In this case, a common voltage can be applied to the first semiconductor layers of conductivity type 21, 31, 41, and an individual light emission signal can be applied to each of the second semiconductor layers of conductivity type 25, 35, 45, or vice versa.When the first, second, and third stacks of 20, 30, and 40 LEDs are stacked vertically one on top of the other, the third stack of 40 LEDs can have an inverted stacking sequence compared to the first and second stacks of 20 and 30 LEDs. That is, the second semiconductor layer of conductivity type 45, for example, a p-type semiconductor layer of the third stack of 40 LEDs can be placed on the active layer 43, and the second semiconductor layer of conductivity type 35 of the second stack of 30 LEDs can be placed under the active layer 33. The stacking sequence of the third stack of 40 LEDs opposite to the stacking sequence of the second stack of 30 LEDs can simplify the manufacturing process of the light-emitting device 120. In this embodiment, the first semiconductor layer of conductivity type and the second semiconductor layer of conductivity type are described as being of the ne type. p, respectively. However, it should be. Petition 870250108390, dated 11 / 26 / 2025, p. 33 / 119 28 / 86 It is understood that the present invention is not limited to this and that the first and second conductivity-type semiconductor layers may be of type pe or type n, respectively.

[096] According to the embodiment shown in the figures, the light-emitting device 120 may include a first electrode of pad 20pd, a second electrode of pad 30pd, a third electrode of pad 40pd, and a fourth electrode of pad 50pd. The second semiconductor layers of conductivity type 25, 35, 45 of the LED stacks 20, 30, 40 may be connected to the first electrode of pad 20pd, the second electrode of pad 30pd, and the third electrode of pad 40pd, respectively, to receive corresponding light-emitting signals. On the other hand, the first semiconductor layers of conductivity type 21, 31, 41 of the LED stacks 20, 30, 40 may be connected to the fourth electrode of pad 50pd to receive a common voltage applied from outside. In this way, each of the first, second, and third LED stacks (20, 30, 40) can be activated independently, although they share a common n-type electrode to which the common voltage is applied, without being limited to that.

[097] The first electrode pad 20pd can be connected to the first top contact electrode 25p through a first contact hole 20CH set through the first insulating layer 81 and can also be electrically connected to the second conductivity-type semiconductor layer 25. The first electrode pad 20pd can be disposed between the first insulating layer 81 and the second insulating layer 83 and can at least partially overlap the first and second insulating layers 81, 83. Petition 870250108390, dated 11 / 26 / 2025, p. 34 / 119 29 / 86

[098] The second electrode pad 30pd can be connected to the second lower contact electrode 35p through a second contact hole 30CH set through the first insulating layer 81 and can also be electrically connected to the second conductivity-type semiconductor layer 35. The second electrode pad 30pd can be disposed between the first insulating layer 81 and the second insulating layer 83 and can at least partially overlap the first and second insulating layers 81, 83.

[099] The third electrode pad 40pd can be connected to the third upper contact electrode 45p through a third contact hole 40CH set through the first insulating layer 81 and can also be electrically connected to the second conductivity-type semiconductor layer 45. The third electrode pad 40pd can be disposed between the first insulating layer 81 and the second insulating layer 83 and can at least partially overlap the first and second insulating layers 81, 83.

[0100] The fourth electrode pad 50pd is electrically connected in common to the first semiconductor layers of conductivity type 21, 31, 41 of the first, second, and third LED stacks 20, 30, 40. For example, the fourth electrode pad 50pd can be electrically connected to the first lower contact electrode 21n, the second upper contact electrode 31n, and the third lower contact electrode 41n arranged in the first semiconductor layers of conductivity type 21, 31, 41 of the first, second, and third LED stacks 20, 30, 40 through the first subcontact hole 50CHa, the second subcontact hole 50CHb, and the third subcontact hole 50CHc defined through the first insulating layer 81. At least one of the first Petition 870250108390, dated 11 / 26 / 2025, page 35 / 119 The 30 / 86 lower contact electrode 21n, the second upper contact electrode 31n, and the third lower contact electrode 41n can be omitted, and the fourth electrode pad 50pd can be electrically connected directly to the first semiconductor layer of conductivity type 21 of the first LED stack 20, can be electrically connected to the first semiconductor layer of conductivity type 31 of the second LED stack 30 through the second subcontact hole 50CHb, or can be electrically connected to the first semiconductor layer of conductivity type 41 of the third LED stack 40 through the third subcontact hole 50CHc.

[0101] According to one embodiment, the 20pd, 30pd, 40pd, 50pd electrode pads can be formed in various locations. For example, when the light-emitting device 100 has a square top surface, as shown in FIG. 1A, the 20pd, 30pd, 40pd, 50pd electrode pads can be arranged around each vertex of the square top surface. However, it should be understood that the present invention is not limited to this. Alternatively, the light-emitting device 120 can be formed in various shapes and the 20pd, 30pd, 40pd, 50pd electrode pads can be formed in various locations, depending on the shape of the light-emitting device 120.

[0102] The first, second, third, and fourth electrode pads 20pd, 30pd, 40pd, 50pd are spaced apart and can be isolated. According to one embodiment, the first, second, third, and fourth electrode pads 20pd, 30pd, 40pd, 50pd can cover at least part of the side surfaces of the first, second, and third LED stacks 20, 30, 40, respectively.

[0103] The first to fourth connecting electrodes 20ce, 30ce, Petition 870250108390, dated 11 / 26 / 2025, page 36 / 119 31 / 86 40ce, 50ce can be formed into an elongated shape extending vertically from the substrate 11. The first connecting electrode 20ce can be electrically connected to the first electrode pad 20pd through a first through hole 20ct set through the second insulating layer 83. The second connecting electrode 30ce can be electrically connected to the second electrode pad 30pd through a second through hole 30ct set through the second insulating layer 83. The third connecting electrode 40ce can be electrically connected to the third electrode pad 40pd through a third through hole 40ct set through the second insulating layer 83. The fourth connecting electrode 50ce can be electrically connected to the fourth electrode pad 50pd through a fourth through hole 50ct set through the second insulating layer 83.

[0104] The first to fourth connecting electrodes 20ce, 30ce, 40ce, 50ce may include metals such as Cu, Ni, Ti, Sb, Mo, Co, Sn, Ag, or alloys thereof, but are not limited to these. For example, each of the first to fourth connecting electrodes 20ce, 30ce, 40ce, 50ce may include two or more metal layers or a plurality of different metal layers to reduce strain due to the elongated shape of the first to fourth connecting electrodes 20ce, 30ce, 40ce, 50ce. When the first to fourth connecting electrodes 20ce, 30ce, 40ce, 50ce include Cu, an additional metal layer may be formed to suppress Cu oxidation. Furthermore, the first to fourth connecting electrodes 20ce, 30ce, 40ce, 50ce may include Cu / Ni / Sn. In this structure, Cu can prevent Sn from penetrating the light-emitting device 100 and also exhibits excellent thermal conductivity, through which the heat generated by the light-emitting device 100 can be dissipated. Petition 870250108390, dated 11 / 26 / 2025, p. 37 / 119 32 / 86 easily dissipated out.

[0105] The connecting electrodes of the first to fourth 20ce, 30ce, 40ce, 50ce may also include seed layers to form the metallic layers during a galvanizing process. The seed layers may be composed, for example, of a plurality of Ti / Cu layers.

[0106] The first to fourth connecting electrodes 20ce, 30ce, 40ce, 50ce may have a flat top surface, thus facilitating the electrical connection between external lines or circuit electrodes described below and the first, second and third LED stacks. According to one embodiment, when the light-emitting device 100 includes micro-LEDs with a surface area less than 10,000 pm2, specifically less than 4,000 pm2, more specifically less than 2,500 pm2, the first to fourth connecting electrodes 20ce, 30ce, 40ce, 50ce may overlap at least one of the first, second, and third LED stacks 20, 30, 40. More specifically, the first to fourth connecting electrodes 20ce, 30ce, 40ce, 50ce may overlap at least one step formed on the lateral surfaces of the first, second, and third LED stacks 20, 30, 40.Thus, since the lower surface of each of the first to fourth connecting electrodes 20ce, 30ce, 40ce, 50ce has a larger contact area than the upper surface, larger contact areas can be formed between the first to fourth connecting electrodes 20ce, 30ce, 40ce, 50ce and the first, second, and third LED stacks 20, 30, 40. Consequently, the first to fourth connecting electrodes 20ce, 30ce, 40ce, 50ce can be more stably formed in the first, second, and third light-emitting stacks 2, 3, 4. Furthermore, the connecting electrodes 20ce, 30ce, 40ce, 50ce connected to the electrode pads 20pd, 30pd, 40pd... Petition 870250108390, dated 11 / 26 / 2025, page 38 / 119 33 / 86 50pd electrodes can occupy most of the area of ​​the 120 light-emitting device, thus providing a 120 light-emitting device capable of efficiently dissipating the generated heat. The 20ce, 30ce, 40ce, and 50ce connecting electrodes can also efficiently dissipate the heat generated by the 120 light-emitting device to the outside via the shortest path.

[0107] According to one embodiment, the protective layer 90 can be formed on the first, second and third light-emitting cells 2, 3, 4. More specifically, as shown in FIG. 2A and FIG. 2B, the protective layer 90 can be formed between the first to fourth connecting electrodes 20ce, 30ce, 40ce, 50ce to cover at least part of the lateral surfaces of the first, second and third light-emitting cells 2, 3, 4 and the lateral surfaces of the first to fourth connecting electrodes 20ce, 30ce, 40ce, 50ce.

[0108] The protective layer 90 may expose the lateral surfaces of the substrate 11, the first and second insulating layers 81, 83 and the third LED stack 40, as shown in the figures. The protective layer 90 may be formed coplanarly with the upper surfaces of the first to fourth connecting electrodes 20ce, 30ce, 40ce, 50ce and may include an epoxy molding compound (EMC) or similar.

[0109] Protective layer 90 may be transparent or may be formed in various colors, such as black, white, or similar. Protective layer 90 may include a polyimide (PID). Here, the polyimide (PID) may be provided as a dry film instead of a liquid to increase flatness when applied to the first, second, and third light-emitting cells 2, 3, 4. In addition, protective layer 90 may include a material with photosensitive properties. Consequently, the Petition 870250108390, dated 11 / 26 / 2025, page 39 / 119 The 34 / 86 protective layer 90 can provide a sufficient contact area to the light-emitting device 120 to protect the first, second, and third light-emitting cells 2, 3, 4 from external impacts that may be applied to them during a subsequent process, while also facilitating handling during a subsequent transfer step. Furthermore, the protective layer 90 can prevent light leakage through the side surfaces of the light-emitting device 120, thus preventing or suppressing interference from light emitted by adjacent light-emitting devices.

[0110] Protective metallic layers of 20ca, 30ca, 40ca, 50ca may be additionally formed on the connecting electrodes 20ce, 30ce, 40ce, 50ce. The protective metallic layers of 20ca, 30ca, 40ca, 50ca may be a plurality of multilayer metallic layers and may be Ti / Ni / Au, without being limited to these. The protective metallic layers of 20ca, 30ca, 40ca, 50ca may be formed on the upper surfaces of the first to fourth connecting electrodes 20ce, 30ce, 40ce, 50ce and may be formed to have a narrower width than the first to fourth connecting electrodes 20ce, 30ce, 40ce, 50ce. Consequently, the protective metallic layers 20ca, 30ca, 40ca, 50ca may have a narrower surface area than the first to fourth connecting electrodes 20ce, 30ce, 40ce, 50ce. However, the present invention is not limited to this, and the protective metallic layers 20ca, 30ca, 40ca, 50ca may be formed to have a greater width than the first to fourth connecting electrodes 20ce, 30ce, 40ce, 50ce, and therefore can be formed over a larger surface area.

[0111] It will be evident that the light-emitting device 120 is not limited to the stacked light-emitting diode, including the Petition 870250108390, dated 11 / 26 / 2025, p. 40 / 119 35 / 86 first and third light-emitting stacks 2, 3, 4, as shown in FIGS. 1 to FIGS. 2B, and can be modified into various structures, such as a vertical type, a horizontal type, a flip-chip type and the like. For example, the light-emitting device 120 can be a light-emitting diode including the semiconductor layers formed on the substrate 11, as shown in FIGS. 5A and 5B.

[0112] Referring to FIG. 5A and FIG. 5B, the light-emitting device 120 may include a first semiconductor layer of conductivity type 121a, an active layer 121b and a second semiconductor layer of conductivity type 121c.

[0113] The first semiconductor layer of conductivity type 121a can be a semiconductor layer grown on a surface of the substrate 11 and a buffer layer (not shown) can be additionally formed between the first semiconductor layer of conductivity type 121a and the substrate 11.

[0114] The first semiconductor layer of conductivity type 121a may include a phosphide or nitride semiconductor, such as (Al,Ga,In)P or (Al,Ga,In)N, and may be formed on substrate 11 by a growth method such as MOCVD, MBE, HVPE or similar. Furthermore, the first semiconductor layer of conductivity type 121a may be an n-type semiconductor layer doped with at least one dopant, such as Si, C, Ge, Sn, Te, Pb or similar. However, it should be understood that the present invention is not limited to this and the first semiconductor layer of conductivity type 121a may also be doped with an opposite conductivity, including p-type dopants.

[0115] In addition, the first semiconductor layer of the type Petition 870250108390, dated 11 / 26 / 2025, p. 41 / 119 36 / 86 conductivity 121a can be composed of a single layer or multiple layers. Furthermore, the first semiconductor layer of the conductivity 121a type may also include a contact layer, a modulation doping layer, an electron implantation layer, and the like.

[0116] The active 121b layer is a light-emitting layer formed in the first semiconductor layer of conductivity type 121a, it may include a phosphide or nitride semiconductor, such as (Al,Ga,In)P or (Al,Ga,In)N, and may be grown in the first semiconductor layer of conductivity type 121a by techniques such as MOCVD, MBE or HVPE.

[0117] Furthermore, the active 121b layer may include a quantum well (QW) structure including at least two barrier layers and at least one well layer, and may include a multiple quantum well (MQW) structure including a plurality of barrier layers and a plurality of well layers.

[0118] The wavelength of light emitted by the active layer 121b can be adjusted by controlling the composition ratio of the materials that make up the well layers. In this case, the well layers can commonly have the same element, for example, In.

[0119] The second semiconductor layer of conductivity type 121c may be a semiconductor layer formed in the active layer 121b.

[0120] The second semiconductor layer of conductivity type 121c may include a phosphide or nitride semiconductor, such as (Al,Ga,In)P or (Al,Ga,In)N, and may be grown by techniques such as MOCVD, MBE, or HVPE. The second Petition 870250108390, dated 11 / 26 / 2025, p. 42 / 119 37 / 86 The 121c type semiconductor layer can be doped to become a type of conductivity opposite to the first 121a type semiconductor layer. For example, the second 121c type semiconductor layer can be a p-type semiconductor layer doped with dopants such as Mg.

[0121] The second semiconductor layer of conductivity type 121c can be formed as a monolayer having a composition such as p-GaN, but not limited to it, and may also include an AlGaN layer.

[0122] In addition, the light-emitting device may also include an electron-blocking layer with a large band gap between the second semiconductor layer of conductivity type 121c and the active layer 121b. The electron-blocking layer may be placed over the active layer 121b and may prevent electrons from overflowing from the active layer 121b to the top of it.

[0123] In addition, the light-emitting device 120 may include a lower contact layer 124, an insulating layer 125, a P electrode pad 122a and an N electrode pad 123a that include a transparent conductive material that transmits light.

[0124] The N and P electrode pads 122a, 123b can be electrically connected to the substrate 110 by means of the connecting electrodes 122b, 123b. However, it should be understood that this embodiment is not limited to this and that the N, P electrode pads 122a, 123a can be soldered directly to the substrate 110 without the connecting electrodes 122b, 123b.

[0125] The light emitted by light-emitting devices 120 Petition 870250108390, dated 11 / 26 / 2025, page 43 / 119 38 / 86 arranged on an upper surface of substrate 110 may have the same peak wavelength or may have different peak wavelengths from each other.

[0126] Referring to FIG. 5B, three light-emitting devices 120 can be mounted side by side in the same plane on the substrate 110 and can emit red light, blue light and green light to form a single pixel displaying a trichromatic RGB color.

[0127] As an example, one of the three light-emitting devices 120 that constitute a pixel may be a light-emitting diode that emits blue B light, that is, a blue light-emitting diode with a peak wavelength within the blue wavelength region, wherein the blue light-emitting diode may have a difference of 2 nm and 15 nm between a peak wavelength and a dominant wavelength. Specifically, the blue light-emitting diode may have a peak wavelength between 430 nm and 475 nm and a dominant wavelength between 460 nm and 480 nm. The peak wavelength of the blue light-emitting diode may be shorter than its dominant wavelength.

[0128] The next light-emitting device among the three light-emitting devices 120 that constitute pixel P may be a green light-emitting diode G, that is, a green light-emitting diode with a peak wavelength within the green wavelength region, in which the green light-emitting diode may have a difference of 5 nm and 20 nm between a peak wavelength and a dominant wavelength. Specifically, the green light-emitting diode may have a peak wavelength between 510 nm and 540 nm and a dominant wavelength between 525 nm and 545 nm. The Petition 870250108390, dated 11 / 26 / 2025, p. 44 / 119 39 / 86 The peak wavelength of the green light-emitting diode may be shorter than its dominant wavelength.

[0129] The last light-emitting device of the three light-emitting devices 120 that constitute pixel P may be a red light-emitting diode R, that is, a red light-emitting diode with a peak wavelength within the red wavelength region, in which the red light-emitting diode may have a difference of 5 nm and 30 nm between the peak wavelength and the dominant wavelength. Specifically, the red light-emitting diode may have a peak wavelength between 620 nm and 640 nm and a dominant wavelength between 600 nm and 630 nm. The peak wavelength of the red light-emitting diode may be a wavelength longer than its dominant wavelength.

[0130] A plurality of light-emitting structures 12 can be formed in an array on a substrate 11 and can be cut along marking lines to be divided into individual light-emitting devices 120, which in turn can be transferred to another substrate or tape using various transfer techniques for subsequent processes such as packaging or modularization.

[0131] FIG. 3 is a schematic cross-sectional view of a light-emitting apparatus 100 according to an embodiment of the present invention. Referring to FIG. 3, the light-emitting apparatus 100 includes a substrate 110, a light-emitting device 120 and a molding layer 130.

[0132] The substrate 110 may include pads 115 exposed on a surface thereof and may also include interconnections connected internally or through lateral surfaces of Petition 870250108390, dated 11 / 26 / 2025, p. 45 / 119 40 / 86 same. The substrate 110 can be formed from any material that allows the light-emitting device 120 to be mounted on it, such as a conductive circuit board, a printed circuit board, polyimide and the like.

[0133] When the light-emitting device 120 is a stacked light-emitting diode, as shown in FIG. 1 to FIG. 2B, the light-emitting device 120 can be connected by flip-bond to the pads 115 through the connecting electrodes 20ce, 30ce, 40ce, 50ce. A bonding agent, such as solder or solder paste, can be used to bond the light-emitting device 100 to the circuit board 110. The light generated by the first to third light-emitting stacks 2, 3, 4 can finally be emitted through the substrate 110. The light-emitting device 120 includes four connecting electrodes 20ce, 30ce, 40ce, 50ce and can therefore be connected to the four pads 115 on the circuit board 110. However, the present invention is not limited to this and the light-emitting device 120 can be connected to it by means of eutectic bonding, epoxy bonding, anisotropic conductive film (ACF) bonding, a bead lattice array (BGA) or the like.

[0134] The molding layer 130 can cover at least part of a side or top surface of the light-emitting device 100 and can transmit at least a fraction of the light emitted by the light-emitting device 120.

[0135] The molding layer 130 can reflect, diffract and absorb a fraction of the external light to prevent the external light from being reflected by the light-emitting device 120 in a direction in which the light is observed by a user.

[0136] The molding layer 130 can cover at least part of the light-emitting device 100 to protect the device. Petition 870250108390, dated 11 / 26 / 2025, page 46 / 119 41 / 86 light emitter 100 from moisture and external impact. In addition, the molding layer 130 can protect the light emitting device 100 together with the protective layer 90 formed on the light emitting device 100.

[0137] The molding layer 130 may also include fillers such as silica, TiO2, alumina and the like. In addition, the molding layer 130 may include the same material as the protective layer 90.

[0138] The molding layer 130 can be formed by a method such as lamination, inkjet printing and the like. For example, the molding layer 130 can be formed by a vacuum lamination process in which a sheet of organic polymer is disposed on the light-emitting device 120 and subjected to high temperature and high pressure in vacuum to provide a flat top surface of the light-emitting module, thus improving the uniformity of the light.

[0139] The molding layer 130 can be formed to cover both the top surface and the side surface of the light-emitting device 120. The molding layer 130 can be a transparent molding layer or it can be a black matrix including a light-absorbing material to prevent light diffusion. Alternatively, the molding layer 130 can be free of a light-absorbing material to improve light transmission to the outside.

[0140] FIG. 4 is a schematic cross-sectional view of a light-emitting apparatus 100 according to another embodiment. Referring to FIG. 4, the light-emitting apparatus 100 may include a substrate 110, a light-emitting device 120 and a molding layer 130, and may further include a first microelement 140 disposed above the device. Petition 870250108390, dated 11 / 26 / 2025, p. 47 / 119 42 / 86 light emitter 120.

[0141] The first microelement 140 is arranged above a light output surface of the light-emitting device 120, i.e., on a light-emitting surface, to form an optical path so that the light generated by the light-emitting device 120 can be emitted outwards through the first microelement 140 arranged on the light-emitting surface.

[0142] The first microelement 140 may include a curved surface U formed in at least one region of at least one of its upper and lower surfaces. The curved surface of the first microelement 140 may be formed by a first submicroelement 142 projecting from its upper surface, and FIG. 4 illustrates an example where curved surfaces U are formed by a plurality of first submicroelements 142 formed in the region of the upper surface of the first microelement 140.

[0143] The first microelement 140 is an optical element that includes a curved surface U and can act as a collimator that collimates the light generated by the light-emitting device 120 or as a light collector that focuses the light generated by it.

[0144] The curved surface U can be a surface with a curvature formed on the surface (upper surface or lower surface) of the first microelement 140. Thus, even when the light generated by the light-emitting device 120 has a wide angular range, the first microelement 140 can increase the angular coverage range of light that can effectively fall on and be emitted by the first microelement 140. Petition 870250108390, dated 11 / 26 / 2025, p. 48 / 119 43 / 86

[0145] The first submicroelement 142 has a roughness structure forming the curved U-shaped surface, which can be hemispherical or conical. Alternatively, the roughness structure can be truncated conical with a flat surface formed by cutting off one of its distal ends. The structure of the first submicroelement 142 can be selected depending on the color contrast ratio of the pixels to be rendered.

[0146] In one embodiment, the first microelement 140 includes a plurality of first submicroelements 142, each of which may have a width smaller than the maximum width of the light-emitting device 120. This structure allows the light-emitting device 120 to receive and emit light without being affected by the deviation of luminous intensity within a flat region with an area.

[0147] As the light generated by the light-emitting device 120 is emitted through the first microelement 140, the luminous intensity of each pixel can be increased along with the color contrast between the pixels, thus producing a sharp image.

[0148] On the other hand, the first microelement 140 can be formed integrally with the molding layer 130 to vertically overlap the light-emitting device 120 above the light-emitting device 120. The first microelement 140 can refer to an upper region formed integrally with the molding layer 130 and including an upper surface of the molding layer 130. That is, the first microelement 140 can be formed from the same material as the molding layer 130 and have the same refractive index as the molding layer 130. No boundary can be formed. Petition 870250108390, dated 11 / 26 / 2025, pp. 49 / 119 44 / 86 between the first microelement 140 and the molding layer 130.

[0149] The first microelement 140 may further include a region that extends outward from the upper surface of the light-emitting device 120 and does not overlap vertically with the light-emitting device 120.

[0150] Although FIG. 4 shows that the first microelement 140 is formed integrally with the molding layer 130, it should be understood that the first microelement 140 can be formed as a configuration independent of the molding layer 130.

[0151] That is, the molding layer 130 covers the top and side surfaces of the light-emitting device 120 and the first microelement 140 can also be arranged in the molding layer 130. The first microelement 140 arranged in the molding layer 130 can overlap vertically with the light-emitting device 120 in at least one region thereof.

[0152] Here, the first microelement 140 can be formed from the same material as the molding layer 130 or it can be formed from a different material than the molding layer. Furthermore, the first microelement 140 can have a different refractive index than the molding layer 130. With a difference in refractive index between the first microelement 140 and the molding layer 130, the light-emitting apparatus can ensure improved light extraction efficiency.

[0153] Furthermore, a boundary can be formed between the first microelements 140 and the molding layer 130 and the scattering effect can be increased as primary light scattering occurs at the boundary before the light Petition 870250108390, dated 11 / 26 / 2025, pp. 50 / 119 45 / 86 enter the first microelement 140.

[0154] The first microelements 140 can collimate or focus the light emitted by the light-emitting device 120 at different distances or levels, depending on their shape. Although the light generated by the light-emitting device 120 may have different luminous fluxes depending on its wavelength, the first microelement 140 can have different optical path lengths, thus allowing efficient collimation or focusing of the light in the wavelength (or light) range that provides different luminous fluxes.

[0155] The light-emitting surface of the light-emitting device 120 may be a nitride or phosphide semiconductor layer and may be arranged facing the first microelement 140.

[0156] However, the present invention is not limited to this and a second additional microelement 160 may be arranged between the nitride or phosphide semiconductor layer of the light-emitting device 120 and the first microelement 140.

[0157] The second microelement 160 can be a light-transmitting layer through which the light generated by the light-emitting device 120 is transmitted.

[0158] The second microelement 160 may have a refractive index different from the materials of the layers arranged on its upper and lower surfaces. Furthermore, the second microelement 160 may include second submicroelements 162.

[0159] The second 162 submicroelements may have a roughness structure similar to the first Petition 870250108390, dated 11 / 26 / 2025, pp. 51 / 119 46 / 86 submicroelements 142. In this embodiment, the second submicroelements 162 can project or extend from the second microelement 160 in a direction in which the nitride or phosphide semiconductor layer of the light-emitting device 120 is arranged (i.e., towards the substrate 110).

[0160] The second microelement 160 can be formed from at least one of the following materials: sapphire, silicone, polymer or similar, and the second submicroelements 162 can be formed from any of the following: sapphire, silicone, polymer, SiO2, TiO2, AlN or similar.

[0161] The total width of the second submicroelements 162 may be different from the total width of the first submicroelements 142.

[0162] The total width of the second submicroelements 162 may be less than the total width of the first submicroelements 142, or vice versa. Consequently, regions with different sharpness may be adjusted by adjusting the widths of the first and second submicroelements 142, 162.

[0163] Furthermore, a peak-to-peak distance between the vertices of first adjacent submicroelements 142 having a roughness structure can be much smaller than the total width of the first microelements 140, and can be smaller than a peak-to-peak distance between the vertices of second adjacent submicroelements 162 having a roughness structure.

[0164] Next, FIG. 5A and FIG. 5B are seen in section of a light-emitting apparatus 100 according to another Petition 870250108390, dated 11 / 26 / 2025, p. 52 / 119 47 / 86 modality. The light-emitting apparatus 100 shown in FIG. 5 may have the same or similar structure to the light-emitting apparatus 100 shown in FIG. 3 and FIG. 4, except for the shape of the light-emitting device 120. In other words, it will be evident that the shape of the light-emitting device 120 of the light-emitting apparatus 100 is not limited to the vertically stacked structure as shown in FIG. 3 and FIG. 4, and the light-emitting devices 120 shown in FIG. 7 to FIG. 12 may also be modified in structure as shown in FIG. 5A and FIG. 5B.

[0165] Exemplary plan views of the first microelement 140 are shown in FIGS. 6A to 6C,

[0166] Referring to FIG. 6A, the upper surface of the first microelement 140 may include a plurality of first submicroelements 142 with different heights or sizes. Furthermore, the plurality of first submicroelements 142 may be interconnected to constitute a group.

[0167] Thus, the light passing through the first 142 submicroelements in a group may have different peak wavelengths. The first 142 submicroelements in a group may be formed within an outer boundary of the light-emitting apparatus 100. That is, an upper surface of the light-emitting apparatus 100 may be surrounded by a relatively flat region in which the first 142 submicroelements are not formed.

[0168] A region surrounded by the planar region (i.e., a region where the first 142 submicroelements are formed) can also be defined as a region where light is collimated or focused. Petition 870250108390, dated 11 / 26 / 2025, pp. 53 / 119 48 / 86

[0169] Furthermore, when the light-emitting apparatus 100 includes the second microelement 160, the first submicroelements 142 and the second submicroelements 162 may have different sizes. Consequently, the light extraction efficiency and the collimation or focusing efficiency may be improved due to the submicroelements 142, 162 having different sizes and being arranged at different levels.

[0170] Alternatively, the plurality of first submicroelements 142 can be arranged regularly in rows m and columns n, as shown in FIG. 6B. The plurality of first submicroelements 142 can be spaced apart from each other to be placed independently and can be surrounded by a surface of smaller height between them.

[0171] The smallest distance E1 between the outer surfaces of the plurality of first submicroelements 142 can be smaller than the largest width E2 of the first submicroelements 142. Thus, the light emitted by the light-emitting apparatus 100 through the first microelement 140 can be emitted as uniformly as possible.

[0172] When the light-emitting apparatus 100 also includes the second microelement 160, the first submicroelements 142 of the first microelement 140 may have a different size from the second submicroelements 162 of the second microelement 160 and may be arranged in a different arrangement from the second submicroelements 162. Consequently, the light extraction efficiency and the collimation or focusing efficiency may be improved due to the first and second submicroelements 142, 162 being arranged in different arrangements and at different levels.

[0173] In another embodiment, referring to FIG. 6C, a Petition 870250108390, dated 11 / 26 / 2025, pp. 54 / 119 49 / 86 The plurality of first submicroelements 142 can be arranged so that a single first submicroelement 142 is surrounded by multiple first submicroelements 142 spaced apart from each other. In this embodiment, the plurality of first submicroelements 142 can be arranged in a hexagonal structure, like a honeycomb structure, when viewed as a whole.

[0174] Preferably, a single first submicroelement 142 is arranged as a nucleus and the first submicroelements 142 surrounding the nucleus can form a plurality of shells (n shells, where n is a natural number greater than or equal to 2).

[0175] The number N of the first 142 submicroelements that make up the nth layer may have a ratio of (nx6)-6. In the top view of the light-emitting apparatus 100, the core can be seen as a single first 142 submicroelement arranged at a central point of diagonal lines and the shell can be seen as a plurality of first 142 submicroelements surrounding the core.

[0176] When the light-emitting apparatus 100 also includes the second microelement 160, the first submicroelement 142 and the second submicroelement 162 may have different sizes and may be arranged in substantially the same arrangement. Consequently, the light extraction efficiency and the collimation or focusing efficiency may be improved due to the first and second submicroelements 142, 162 having similar arrangements and being arranged at different levels.

[0177] Similar to FIG. 6C, one of the plurality of second submicroelements 162 is arranged in a nucleus and the plurality of second submicroelements 162 surrounding the nucleus can form an nth layer, where n can be 2 or more. The number Petition 870250108390, dated 11 / 26 / 2025, p. 55 / 119 50 / 86 The number of second submicroelements 162 that make up the nth layer can have a ratio of (nx6)-6.

[0178] Next, FIG. 7 is a cross-sectional view of a light-emitting device 100 according to another embodiment. Referring to FIG. 7, a plurality of light-emitting devices 120 can be arranged on the substrate 110 to be spaced from each other. In this embodiment, the first microelement 140 can be formed in the upper portions of the plurality of light-emitting devices 120.

[0179] In addition, the light-emitting apparatus 100 may also include a partition 180 located in a corresponding region between adjacent light-emitting devices 120 on the substrate 110.

[0180] A 180 partition is a type of partition element and can be formed from an insulating material to divide the mounting regions of multiple 120 light-emitting devices. The 180 partition can also absorb at least a fraction of the light. Consequently, the light generated by the 120 light-emitting device can be prevented from affecting the light generated by another adjacent 120 light-emitting device to avoid photoluminescence, thus improving color clarity.

[0181] A region of the first microelement 140 can overlap vertically with the light-emitting device 120 and other regions of it can overlap vertically with the partition 180.

[0182] In the first microelement 140, when a region that overlaps vertically with the light-emitting device 120 is called A1 and the other region is called A2, the brightness in A1 can be adjusted to be different from the brightness in A2 to Petition 870250108390, dated 11 / 26 / 2025, p. 56 / 119 51 / 86 improve sharpness contrast. The intensity of light emitted by region A1 may be greater than the intensity of light emitted by region A2.

[0183] Referring to FIG. 7, an upper surface of partition 180 can be arranged higher than the upper surface of pad 115 on which the light-emitting device 120 is mounted. Furthermore, a height H2 from the upper surface of pad 180 to the upper surface of the first microelement 140 can be less than a height H1 from the upper surface of pad 115 to the first microelement 140.

[0184] Although not shown in the figures, in the top plan view, the 180 partition can be arranged over the plurality of light-emitting devices 120. The 180 partition can divide a region within the light-emitting device 100, preferably to define pixel units. Thus, when viewed from the outside, the 180 partition can have an effect of increasing the color clarity of each pixel.

[0185] Furthermore, partition 180 can also be arranged on an outer periphery of the light-emitting apparatus 100 to expose a side surface thereof. Alternatively, in the top view, partition 180 arranged on the outer periphery can be arranged to encircle the top surface of the substrate 110 so as to define the outer periphery of the light-emitting apparatus 100.

[0186] Thus, the partition 180 arranged between the plurality of light-emitting devices 120 can be connected to the partition 180 arranged on the outer periphery of the light-emitting device and the light-emitting devices 120 can be arranged in openings formed in the partitions 180 in the top plan view. Petition 870250108390, dated 11 / 26 / 2025, page 57 / 119 52 / 86

[0187] In another embodiment, where a single light-emitting device 120 is disposed, the light-emitting device 120 may be disposed in an opening formed in the partition 180 in top plan view.

[0188] Next, FIG. 8 is a cross-sectional view of a light-emitting device 100 according to another embodiment. Referring to FIG. 8, the first microelement 140 of the light-emitting device 100 can be arranged between non-micro (NM) domains in which a planar surface F is formed. In other words, the first microelement 140 can be formed continuously across the entire upper surface of the light-emitting device 100, as in FIG. 7, while they are spaced apart from each other in each region corresponding to the upper surface of each of the light-emitting devices 120.

[0189] In the top view, the first microelement 140 can be surrounded by the non-micro NM domains. The amount of light emitted by the non-micro NM domain can be less than the amount of light emitted by the first microelement 140.

[0190] The non-micro NM domain may be flatter than the regions formed with the first microelement 140.

[0191] That is, a height deviation of the non-micro NM domains may be less than a height deviation of the regions formed with the first microelement 140. Consequently, since the non-micro NM domains allow the re-incidence or extinction of light through total reflection of a greater amount of incident light in the non-micro NM domains than the regions formed with the first microelement 140, the regions formed with the first microelement 140 may relatively improve the clarity of the light emitted through them. Petition 870250108390, dated 11 / 26 / 2025, pp. 58 / 119 53 / 86

[0192] An upper surface of the region formed with the first microelement 140 may be smaller than the upper surface of the non-micro NM domain. Thus, a lateral surface of the non-micro NM domain may act as an assist light guide. Here, a boundary surface between the non-micro NM domain and the first microelement 140 may be formed as an inclined surface.

[0193] When the light-emitting apparatus 100 also includes partition 180, the non-micro NM domain can vertically overlap partition 180 in at least one region thereof. Thus, the light that re-enters the non-micro NM domain through total reflection can be scattered by partition 180 to reduce the luminance of the light emitted by the non-micro NM domain, thereby increasing the color contrast with respect to the region formed with the first microelement 140.

[0194] Next, FIG. 9 is a cross-sectional view of a light-emitting apparatus 100 according to another embodiment. Referring to FIG. 9, the first microelement 140 of the light-emitting apparatus 100 can be arranged higher than the upper surface of the non-micro NM domain in a region between the light-emitting devices 120. Consequently, the region formed with the first microelement 140 is closer to the user's eye, thus improving the visibility of the emitted light.

[0195] Furthermore, a CC concave surface can be formed in a region between adjacent light-emitting devices 120 to face the upper surface of the substrate 110. The CC concave surface is a recessed surface formed in the non-micro NM domain and can have a variable width along its depth. Petition 870250108390, dated 11 / 26 / 2025, pp. 59 / 119 54 / 86

[0196] Preferably, the concave CC surface has a greater width in an upper portion than in a lower portion. With the variable width of the concave CC surface depending on the depth, the amount of light emission from the non-micro NM domain can be adjusted.

[0197] A lower interface of the CC concave surface can be formed to have a curvature, thus allowing refraction of incident light at multiple angles. A lateral surface of the CC concave surface (i.e., a lateral surface of the recessed region of the non-micro NM domain) can be inclined at an angle of 0 to 45 degrees relative to a vertical plane of the substrate 110.

[0198] Furthermore, an outer surface of the light-emitting apparatus 100 can be formed parallel to the lateral surface of the substrate 110 or a portion of the concave CC surface of the non-micro NM domain can be cut and disposed within the substrate 110.

[0199] Next, FIG. 10 is a cross-sectional view of a light-emitting device 100 according to another embodiment. Referring to FIG. 10, the curved surface U of the first microelement 140 vertically overlapping the light-emitting device 120 may be a convex surface CV formed on an upper surface of the first microelement 140.

[0200] The CV convex surface has a single curvature and the first microelement 140 including the CV convex surface may have a greater width than the corresponding light-emitting device 120 in a horizontal direction. Consequently, the CV convex surface with a single curvature may extend outwards, beyond the upper surface of the light-emitting device 120. Petition 870250108390, dated 11 / 26 / 2025, pp. 60 / 119 55 / 86

[0201] With the CV convex surface, the first microelement 140 overlapping vertically with the light-emitting device 120 can vary in thickness depending on its location.

[0202] For example, a thickness k1 of the first microelement 140 in a central region of the light-emitting device 120 may be greater than a thickness K2 of the first microelement 140 in an outer peripheral region of the light-emitting device.

[0203] That is, the thickness k1 of the first microelement 140 near the central region of the light-emitting device 120 may be greater than the thickness k2 of the first microelement 140 near the outer periphery of the light-emitting device 120.

[0204] The convex surface (CV, curved surface) of the first microelement 140 can extend further outward along the lateral surface of the light-emitting device 120, and a curvature of the upper surface of the light-emitting device 120 can be different from a curvature of the lateral surface of the same. Thus, the width of the region that guides (or collimates or focuses) the light can extend to the lateral surface of the light-emitting device 120, increasing the color contrast.

[0205] In addition, the light-emitting apparatus 100 may also include a partition 180 and the characteristics of the partition 180 may be similar to those described above and the repeated description of them will be omitted here.

[0206] A region formed with the first microelement 140 can be arranged between the non-micro NM domains in which a concave CC surface is formed, similar to the structure Petition 870250108390, dated 11 / 26 / 2025, pp. 61 / 119 56 / 86 shown in FIG. 9. The description of the non-micro NM domain may be similar to that described above and will be omitted here.

[0207] Next, FIG. 11 is a cutaway view of a light-emitting device 100 according to another embodiment. The light-emitting device 100 of FIG. 11 may have the same structure or a similar structure to the embodiments mentioned above, except that the side surface of the partition 180 includes an inclined surface M.

[0208] The inclined surface M can be a curved surface with a curvature and can be formed with a plurality of irregularities. The inclined surface M can increase the amount of light emitted through the upper surface of the light-emitting device 120, altering the path of displacement of the incident light on the lateral surface of the partition 180 towards the light-emitting device 120, thus improving the luminance of the light emitted through the first microelement 140.

[0209] Because the inclined surface M is formed on the side surface of the partition 180, the distance from the side surface of the partition 180 to the light-emitting device 120 may vary depending on the vertical location of the partition, and the distance from the side surface of the partition 180 to at least one electrode of the light-emitting device 120 may vary.

[0210] Partition 180 can be arranged between electrodes 115 of substrate 110. Alternatively, at least part of partition 180 can be arranged so as to be spaced from the lateral surfaces of electrodes 115 of substrate 110 in cross-sectional view.

[0211] The top surface of the 180 partition may include a Petition 870250108390, dated 11 / 26 / 2025, pp. 62 / 119 57 / 86 flat surface. In another embodiment, a plurality of irregularities 182 can be formed on the upper surface of partition 180. A region of the upper surface of partition 180 in which irregularities 182 are formed can be arranged so as to face a lower surface of the concave CC surface of the non-micro NM domain described above.

[0212] Next, FIG. 12 is a cross-sectional view of a light-emitting apparatus 100 according to another embodiment. The light-emitting apparatus 100 shown in FIG. 12 may have the same or similar structure to the embodiments mentioned above, except that the partition 180 covers at least part of the electrodes 115 of the substrate 110.

[0213] Partition 180 can be formed to cover the lateral surfaces of electrodes 115 and can prevent light from being reflected from the exposed upper surfaces of electrodes 115, thus improving the color contrast between the first microelement 140 and the non-micro NM domain.

[0214] Furthermore, the partition 180 can prevent a conductive material from migrating to adjacent pixels or to the operating light-emitting device 120, thus allowing an effective improvement in the reliability of the light-emitting device 100.

[0215] The upper surface of partition 180 can be formed as a curved surface including regions with different heights, and partition 180 can be arranged to project upwards in a region of partition 180 overlapping electrode 115, such that the height of partition 180 in the region overlapping electrode 115 is greater than the height of partition 180 in Petition 870250108390, dated 11 / 26 / 2025, pp. 63 / 119 58 / 86 a region not overlapping electrode 115. By increasing the height of partition 180 located near the light-emitting device 120, the amount of light emitted in the non-micro NM domain can be reduced.

[0216] Next, FIG. 13 is a cross-sectional view of a light-emitting apparatus 100 according to another embodiment. Referring to FIG. 13, the light-emitting apparatus 100 may include a substrate 110, at least one light-emitting device 120 disposed on a surface of the substrate 110 and a molding layer 130 covering at least one region of the light-emitting device 120.

[0217] The substrate 110, the light-emitting device 120, and the molding layer 130 may have the same or similar structure to the aforementioned embodiments, and therefore, a detailed description of them will be omitted.

[0218] A plurality of light-emitting devices 120 can be arranged on the substrate 110 of the light-emitting apparatus 100 to be spaced from each other and the first microelement 140 can include a plurality of guide portions 242 corresponding to the upper portions of the light-emitting devices 120.

[0219] At least two of the plurality of light-emitting devices 120 may emit different peak wavelengths. Alternatively, each of the plurality of light-emitting devices 120 may include a plurality of active layers that emit a plurality of peak wavelengths.

[0220] The curved U-shaped surface of the first microelement 140 can be formed in the guide portion 242. The light-emitting apparatus Petition 870250108390, dated 11 / 26 / 2025, pp. 64 / 119 59 / 86 100 according to the embodiment shown in FIG. 13 may also allow the light generated by the light-emitting devices 120 to be emitted through the first microelement 140 arranged on the light-emitting surface.

[0221] The first microelement 140 can collimate or focus light particles generated in the light-emitting device 120 and emitted by the light-emitting device 120. As a result, the luminous intensity of each pixel is increased along with the color contrast between the pixels, resulting in a sharper image.

[0222] The first microelement 140 may be formed from silicone, sapphire, glass, phenyl silicone, methyl silicone, epoxy, fused silica, borosilicate, soda-lime glass, aluminosilicate, fluoropolymer, polyphthalamide (PPA), polybutylene terephthalate (PBT), polycarbonate (PC), acrylic, acrylic resin, polyvinyl butyral (PVP), polyethylene terephthalate (PET), polycyclohexylenedimethylene terephthalate (PCT) or the like.

[0223] A light beam angle emitted through the first microelement 140 may be smaller than a light beam angle emitted by the light-emitting device 120. For example, the light beam angle emitted by the light-emitting device 120 may be greater than or equal to 120 degrees and the light beam angle emitted through the first microelement 140 may be less than 120 degrees.

[0224] First, the guide portion 242 of the first microelement 140 forms a curved surface U. For example, the curved surface U can be a convex surface CV that projects or is convex in a light emission direction in cross view. Petition 870250108390, dated 11 / 26 / 2025, pp. 65 / 119 60 / 86

[0225] The guide portion 242 is arranged corresponding to the light-emitting device 120 and may vertically overlap the light-emitting device 120 in at least one region thereof.

[0226] The guide portion 242 may include a first surface through which light is emitted and a second surface opposite the first surface and facing the light-emitting device 120.

[0227] The first surface is a CV convex surface which is a U curved surface and may have a greater curvature than the second surface. Thus, even when the light generated by the light-emitting device 120 has a wide angular range, the guide portion 242 can increase the angular coverage range of light that can effectively fall on and be emitted from the guide portion 242.

[0228] Guide portions 242 can have a hemispherical or conical shape. Alternatively, guide portion 242 can have a truncated conical shape with a flat surface formed by cutting off one of its distal ends. The structure of the guide portion can be selected depending on the color contrast ratio of the pixels to be rendered.

[0229] The surface area of ​​the first surface may be larger than the surface area of ​​the second side. The first surface of guide portions 242 may have a symmetrical shape on the left and right sides with respect to a vertex located at the highest position. Furthermore, since guide portion 242 includes the convex (CV) surface in the first surface, guide portion 242 may include a region that gradually becomes thinner towards both sides of the guide portion from the vertex at the highest position in the center. Petition 870250108390, dated 11 / 26 / 2025, pp. 66 / 119 61 / 86

[0230] Furthermore, the width of the guide portion 242 may be less than a separation distance between the light-emitting devices 120.

[0231] The first microelement 140 may also include a connecting portion 244 connecting the plurality of guide portions 242 to each other. The connecting portions 244 may be integrally formed with the guide portions 242.

[0232] The connecting portion 244 can be placed between adjacent light-emitting devices 120 to connect adjacent guide portions 242 to each other.

[0233] That is, the connecting portion 244 can be disposed between the adjacent guide portions 242 and at least one region of the connecting portion 244 can be disposed between the adjacent light-emitting devices 120.

[0234] The connecting portion 242 may include a first connecting surface connecting the first surfaces of the guide portions 242 to each other and a second connecting surface disposed opposite the first connecting surface and facing the substrate 110.

[0235] The first connection surface of connection portion 244 can be connected to the first surfaces of guide portions 242 and the second connection surface of connection portion 244 can be connected to the second surfaces of guide portions 242.

[0236] In cross-sectional view, guide portion 242 may have a smaller width than connecting portion 244. Furthermore, guide portion 242 may have a greater thickness than connecting portion 244. Additionally, the width of connecting portion 244 may be less than a separation distance between the Petition 870250108390, dated 11 / 26 / 2025, pp. 67 / 119 62 / 86 light-emitting devices 120.

[0237] A first light control layer 270 can be arranged on a surface (first connection surface) of the connection portion 244 opposite the substrate 110.

[0238] The first light control layer 270 is a layer arranged on the first connecting surface of the connecting portion 244 and can be arranged between the guide portions 242. In the top view of the light-emitting device 100, the first light control layers 270 can be interconnected in the form of a matrix or grid pattern.

[0239] The first light control layer 270 may include OP apertures, each arranged corresponding to the guide portion 242 to expose the guide portions 242. The guide portions 242 may be exposed through the OP apertures and the vertices of the first surfaces of the exposed guide portions 242 may be placed higher than a top surface of the first light control layer 270. The OP apertures may have a greater width than the guide portions 242.

[0240] Referring to FIG. 14, in the top view, the guide portions 242 can be arranged regularly in rows m and columns n in the form of a matrix. The plurality of guide portions 242 can be spaced from each other to be placed independently and can be surrounded by the first light control layer 270. A region of the connecting portion 244 can be exposed between the guide portions 242 and the openings OP in the first light control layer 270. The separation distance S1 between the adjacent openings OP of the first light control layer 270 can be less than the width S2 of the opening OP. Petition 870250108390, dated 11 / 26 / 2025, pp. 68 / 119 63 / 86

[0241] In cross-sectional view, an edge of the upper surface of the first light control layer 270 can be arranged to horizontally overlap the lateral surface of the guide portion 242. That is, the edge of the upper surface of the first light control layer 270 can face the lateral surface of the guide portion 242. An inclination of the lateral surface of the first light control layer 270 can be different from the inclination of the lateral surface of the guide portion 242. Consequently, the light-emitting device can achieve improvements in light extraction efficiency and can adjust the beam angle. That is, the angle of the light beam emitted by the light-emitting element 120 can be different from the angle of the light beam emitted through the light control layer 270.

[0242] On the other hand, the first microelement 140 may include at least one type of P-filler. The filler may adjust a light travel path and angle by means of light scattering, refraction, or absorption. The P-filler may include at least one of the following: silica, SiO2, TiO2, alumina, carbon, or ZnO.

[0243] It should be noted that P filler can also be added to the first microelement 140 of the light-emitting apparatus 100 shown in FIG. 3 to FIG. 12.

[0244] The first microelement 140 can be arranged on an upper surface of the molding layer 130 so as to contact the molding layer 130 and can be arranged to vertically overlap at least part of the light-emitting device 120 from above the light-emitting device 120. The guide portions 242 of the first microelement 140 overlap vertically the light-emitting devices 120. Thus, Petition 870250108390, dated 11 / 26 / 2025, pp. 69 / 119 64 / 86 an air gap between the light-emitting device 120 and the first microelement 140 can be eliminated to prevent light from getting trapped in the air gap.

[0245] The first microelement 140 can be formed from an organic material, specifically a polymeric material. Alternatively, the first microelement 140 can be formed from the same material as the molding layer 130 and can include a material with the same refractive index as the molding layer 130.

[0246] Furthermore, the first microelement 140 and the molding layer 130 can be integrally formed with each other so that there is no boundary between them.

[0247] The refractive index of the first microelement 140 may be less than the refractive index of the light-emitting device 120 and may be greater than the refractive index of an external region. In this case, the external region may include air. Thus, as the light generated by the light-emitting device 120 passes through the first microelement 140 which has a lower refractive index than the light-emitting device 120 and is emitted to the external region which has a lower refractive index than the light-emitting device 120, the light can be extracted outwards with less light loss.

[0248] Referring now to FIG. 13, the light-emitting apparatus 100 may also include a buffer layer 190 between the first microelement 140 and the molding layer 130.

[0249] The refractive index of the buffer layer 190 can have a value between the refractive index of the light-emitting device 120 and the refractive index of the first microelement 140. This structure can improve light extraction by reducing the Petition 870250108390, dated 11 / 26 / 2025, pp. 70 / 119 65 / 86 difference in refractive index between the light-emitting device 120 and the first microelement 140. The buffer layer 190 can be a bonding layer that couples or bonds the first microelement 140 to the molding layer 130 or to the light-emitting device 120.

[0250] The light-emitting apparatus 100 may further include a second light control layer 280 disposed on a surface of the substrate 110 facing the substrate 110 of the first microelement 140.

[0251] For example, the second light control layer 280 may be a layer disposed on the second connection surface of the connection portion 244. The second light control layer 280 may vertically overlap the first light control layer 270 in at least one region thereof. In this case, the connection portion 244 may include at least one region in which the first light control layer 270 of the first connection surface vertically overlaps the second light control layer 280 of the second connection surface.

[0252] The second light control layer 280 can be a reflective layer with light reflection properties.

[0253] The second light control layer 280 can be arranged in a region between the light-emitting devices 120 and prevents the light generated through the side surfaces of the light-emitting devices 120 from being emitted through the connecting portion 244 while reflecting the light towards the guide portions 242 so that the light can be extracted to the outside.

[0254] A lower surface of the second control layer Petition 870250108390, dated 11 / 26 / 2025, pp. 71 / 119 66 / 86 of light 280 directed at the substrate 110 can be positioned higher than the top surface of the light-emitting device 120.

[0255] The light-emitting apparatus 100 may include a plurality of substrates 110 arranged adjacent to each other. For example, the light-emitting apparatus 100 may include first and second substrates 110 arranged adjacent to each other.

[0256] A CR crack line may be formed between the first substrate 110 and the second substrate 110 and may extend from a region between the first substrate 110 and the second substrate 110 to the molding layer 130. The first microelement 140 or the buffer layer 190 and the first microelement 140 may be arranged to cover the CR crack line.

[0257] Thus, even when light travels along the CR fissure lines, the first microelement 140 can block the light from being observed externally. The CR fissure line can be arranged in a region of the connecting portion 242. When the first light control layer 270 is arranged on the first connecting surface of the connecting portion 244, the CR fissure line can be arranged in a lower portion of the first light control layer 270.

[0258] The structure in which the light-emitting apparatus 100 includes the plurality of substrates 110 and the crack line CR is formed at the boundary between the substrates 110 may be identical or similarly applicable to the light-emitting apparatus 100 illustrated with reference to FIG. 3 to FIG. 12.

[0259] Next, FIG. 15 is a cross-sectional view of a Petition 870250108390, dated 11 / 26 / 2025, pp. 72-119 67 / 86 light-emitting apparatus 100 according to another embodiment. Referring to FIG. 15, the light-emitting apparatus 100 may have the same structure or a structure similar to the aforementioned embodiments, except that the second surface of the first microelement 140 is arranged to join the molding layer 130 and the upper surface of the light-emitting device 120, and therefore the detailed description of the repeated configuration will be omitted.

[0260] Referring to FIG. 15, the first microelement 140 can be arranged to directly join the molding layer 130 and the upper surface of the light-emitting device 120 without the buffer layer 190. When the light-emitting device 100 also includes the second light control layer 280, the lower surface of the second light control layer 280 facing the substrate 110 can be arranged lower than the upper surface of the light-emitting device 120.

[0261] Thus, the second light control layer 280 can block and reflect the light propagating from a corner of the upper surface of the light-emitting device 120 to the crack line CR to prevent the light from being observed on the crack line CR and can alter the path of the light to allow the light to be emitted outwards through the guide portions 242. That is, the displacement path of the incident light on the lateral surface of the second light control layer 280 can be altered to a different path.

[0262] The top surface of the second light control layer 280 may be level with or below the top surface of the light-emitting device 120.

[0263] Next, FIG. 16 is a cross-sectional view of a light-emitting device 100 according to another Petition 870250108390, dated 11 / 26 / 2025, pp. 73-119 68 / 86 modality. The light-emitting apparatus 100 shown in FIG. 16 may have the same or similar structure to the aforementioned modalities, except for the location of the second light control layer 280.

[0264] Referring to FIG. 16, the second light control layer 280 of the light-emitting device 100 is arranged in a region between the adjacent light-emitting devices 120 and may join the side surfaces of the light-emitting devices 120.

[0265] The second light control layer 280 may include the first regions 282 adjacent to the lateral surfaces of the light-emitting devices 120 and a second region 286 connected to the first regions 282 and adjacent to the substrate 110.

[0266] The first 282 regions can form inclined side surfaces and the inclined side surfaces of different first 282 regions can have different inclinations.

[0267] The first 282 regions may include a region with a horizontal width that is different in the upper and lower portions. For example, the horizontal width of the first 282 region may be gradually reduced towards the upper portion of the same.

[0268] Furthermore, the inclination of the inclined lateral surface of the first region 282 may be steeper than the inclination of the surface of the guide portion 242 of the first microelement 140.

[0269] A T1 thickness of the second region 286 can be thinner than a T2 thickness of the first region 282. Petition 870250108390, dated 11 / 26 / 2025, pp. 74 / 119 69 / 86 Consequently, the second light control layer 280 can form a groove when viewed as a whole, and an empty space formed by the groove can be filled by the molding layer 130 or by the first microelement 140.

[0270] The sum of the maximum thickness T3 of the first microelement 140 on the upper surface of the light-emitting device 120 and the height T4 from an upper surface of the second region 286 to the upper surface of the light-emitting device 120 can be greater than a vertical height T5 from the upper surface of the second region 286 to the first surface of the first microdomain 142. That is, a relationship of T3+T4>T5 can be established.

[0271] Furthermore, the maximum thickness T3 of the guide portion 242 of the first microelement 140 may be greater than the thickness T1 of the second region 286.

[0272] The guide portions 242 of the first microelement 140 overlap vertically with the light-emitting devices 120 and can extend outwards to further overlap at least one region of the first region 282 of the second light control layer 280. Thus, even when the light-emitting device 120 and the first microelement 140 are misaligned, the first region 282 of the second light control layer 280 overlapping vertically with the guide portions 242 of the first microelement 140 can prevent the light viewing angle from being excessively distorted.

[0273] When the light-emitting apparatus 100 also includes the first light control layer 270, the first light control layer 270 may be arranged to overlap the second light control layer 280, and an aperture limit OP of the first light control layer 270 may also be Petition 870250108390, dated 11 / 26 / 2025, pp. 75 / 119 70 / 86 overlap vertically with the second light control layer 280.

[0274] The first microelement 140 is a layer formed integrally with the molding layer 130 and can be formed as a single layer filling the groove formed by the second light control layer 280 and extending to the upper surface of the light-emitting device 120 so as not to have a limit B thereon. However, it should be understood that the present invention is not limited to this.

[0275] For example, an interlayer boundary can also be formed within the first microelement 140 and a boundary B can be formed between the groove-filling layer and a layer above the groove-filling layer. The first microelement that fills the groove under boundary B can be understood as a kind of molding layer 130. Light scattering can occur at boundary B and light that does not proceed to the guide portions 232 can be scattered at boundary B to be dissipated.

[0276] Next, FIG. 17 is a cross-sectional view of a light-emitting apparatus 100 according to another embodiment. The light-emitting apparatus 100 shown in FIG. 17 may have the same or similar structure to the embodiments mentioned above, except that the second light control layer 280 fills a space between adjacent light-emitting devices 120. Referring to FIG. 17, the second light control layer 280 may act as a type of molding layer 130. The embodiment shown in FIG. 17 may also be understood as an embodiment in which the second light control layer 280 is omitted from the embodiment shown in FIG. 15. Petition 870250108390, dated 11 / 26 / 2025, pp. 76 / 119 71 / 86

[0277] Referring to FIG. 17, the T6 thickness of the second light control layer 280 may be less than or equal to the T7 thickness of the light-emitting device 120. Furthermore, the T6 thickness of the second light control layer 280 may vary from 50% to 100% of the T7 thickness of the light-emitting device 120.

[0278] The T6 thickness of the second light control layer 280 may be substantially uniform in the horizontal direction. Preferably, the T6 thickness of the second light control layer 280 disposed between at least two light-emitting devices 120 has a deviation of 150 μm or less in cross-sectional view.

[0279] In the top view, the second light control layer 280 may have an interconnected mesh shape and may be formed to surround each of the light-emitting devices 120 to isolate the light-emitting devices 120 from each other.

[0280] That is, a region of the light-emitting device 120 can be opened by the second light control layer 280 and the opened region can act as a window for light emission. The thickness T6 of the second light control layer 280 can be greater than the maximum thickness T3 of the guide portions 242 of the first microelement 140.

[0281] Alternatively, the thickness T6 of the second light control layer 280 may be greater than the maximum thickness T8 of the connections 244 of the first microelement 140. However, the present invention is not limited to this and the thickness T6 of the second light control layer 280 may be less than the maximum thickness T3 of the guide portions 242 or may be less than the maximum thickness T8 of the connections 244. Petition 870250108390, dated 11 / 26 / 2025, pp. 77 / 119 72 / 86

[0282] Next, FIG. 18 is a cross-sectional view of a light-emitting device 100 according to another embodiment. Referring to FIG. 18, the light-emitting device 100 may have the same or similar structure to the aforementioned embodiments, except for the shape of the guide portion 242 of the first microelement 140.

[0283] Referring to FIG. 18, guide portion 242 may have U-shaped curved surfaces on both the upper and lower surfaces. That is, U-shaped curved surfaces may be formed on the first and second surfaces of guide portions 242.

[0284] The first surface of the guide portion 242 of the first microelement 140 may have a CV convex shape that projects in the direction of light emission so as to have a gradually increasing distance to the upper surface of the light-emitting device 120 with decreasing distance to a central axis of the light-emitting device 120.

[0285] In addition, the second surface of the guide portion 242 may also include a curved U-shaped surface that projects in the direction of light emission so as to have a gradually increasing distance to the upper surface of the light-emitting device 120 with a decreasing distance to the central axis of the light-emitting device 120.

[0286] Since the first surface of the guide portion 242 includes the curved surface U, the first surface of the guide portion 242 can be formed with a region in which the distance between the first surface of the guide portion 242 and the upper surface of the light-emitting device 120 varies.

[0287] The molding layer 130 can also be placed in the region between the first surface of the guide portion 242 and the Petition 870250108390, dated 11 / 26 / 2025, pp. 78 / 119 73 / 86 upper surface of the light-emitting device 120 and can transmit light emitted through the upper surface of the light-emitting device 120 to the guide portion 242. According to the U-shaped curved form of the first and second surfaces of the guide portion 242, the molding layer 130 that fills the region between the guide portions 242 and the upper surface of the light-emitting device 120 can be formed in a convex lens shape, and a boundary surface between the molding layer 130 and the guide portions 242 can also be formed in a CV convex shape.

[0288] Furthermore, the light-emitting device 120 can vertically overlap the curved U-shaped surface of the first surface of the guide portions 242. For example, the entire light-emitting device 120 can be disposed within the region of the curved U-shaped surface of the first surface of the guide portions 242. In another example, a portion of the light-emitting device 120 can be disposed in a region of the connecting portion 244 outside the curved U-shaped surface of the guide portion 242.

[0289] Here, when an imaginary line extending from a distal end of the first light control layer 270 adjacent to the first connection surface of the connection portion 244 to a corner of the upper surface of the light-emitting device 120 is called L1, an angle between L1 and the upper surface of the substrate 110 can vary from 45° to 90°.

[0290] A point where the imaginary line L1 meets the upper surface of the substrate 110 can be formed within a lower surface region of the light-emitting device 120. Petition 870250108390, dated 11 / 26 / 2025, pp. 79-119 74 / 86

[0291] When an imaginary line extending from a distal end of the second light control layer 280 adjacent to the second connection surface of the connection portion 244 to a corner of the upper surface of the light-emitting device 120 is called L2, L2 may intersect the first light control layer 270 and L1.

[0292] Next, FIG. 19 is a cross-sectional view of a light-emitting device 100 according to another embodiment. The light-emitting device 100 shown in FIG. 19 may have the same or similar structure to the embodiments mentioned above, except that the light-emitting device 100 further includes a collimator 135.

[0293] Referring to FIG. 19, the light-emitting apparatus 100 may also include a collimator 135 disposed between the upper surface of the light-emitting device 120 and the lower surface of the guide portion 242.

[0294] The collimator 135 can be disposed on the upper surface of the light-emitting device 120 and can be surrounded by the second surface of the guide portion 242. Furthermore, the collimator 135 can be embedded by the upper surface of the light-emitting device 120 and by the second surface of the guide portion 242.

[0295] Collimator 135 may have a lower refractive index than light-emitting device 120, and the difference in refractive index between them may be greater than or equal to 0.9.

[0296] An upper surface of collimator 135 may be adjacent to the second surface of guide portion 242. Thus, a substance with a refractive index lower than that of collimator 135, such as air, may be prevented from being placed between them. Petition 870250108390, dated 11 / 26 / 2025, pp. 80-119 75 / 86 thus avoiding the trapping of light.

[0297] The collimator material 135 may be the same as or different from the molding layer 130.

[0298] The collimator 135 may have a higher light transmittance than the first microelement 140 at the top of the collimator 135. Consequently, more light may be transmitted to the first microelement 140. The curvature of the top surface of the collimator 135 may be the same as the curvature of the second surface of the guide portion 242 and may be greater than the curvature of the first surface of the same. However, the scope of the present embodiment is not limited to these and the top surface of the collimator 135 may have a smaller curvature than the first surface of the guide portion 242. The curvature of the top surface of the collimator 135 may be adjusted to adjust the light intensity.

[0299] Next, FIG. 20 is a cross-sectional view of a light-emitting device 100 according to another embodiment. The light-emitting device 100 of FIG. 20 may include a substrate 110, a plurality of light-emitting devices 120 arranged on a surface of the substrate 110, a first microelement 140 arranged above the plurality of light-emitting devices 120, and a collimator 135 arranged between the upper surface of the light-emitting device 120 and the lower surface of the first microelement 140 and including a curved U-shaped surface. The repeated description of the same configuration of the embodiments mentioned above will be omitted.

[0300] Referring to FIG. 20, the upper surface (first surface) of the first microelement 140 of the light-emitting apparatus 100 can be a flat surface (F). Petition 870250108390, dated 11 / 26 / 2025, pp. 81 / 119 76 / 86 Since the first microelement 140 covers the upper surface of the collimator 135, a curved U-shaped surface corresponding to the curved U-shaped surface formed on the upper surface of the collimator 135 can be formed on the second surface of the first microelement 140.

[0301] In FIG. 20, the light-emitting apparatus 100 may further include a molding layer 130 covering at least part of the lateral surface of the light-emitting device 120. The light-emitting apparatus 100 may further include a third light control layer 290 disposed in the molding layer 130.

[0302] Here, the molding layer 130 is disposed in a region between the light-emitting devices 120 and may have a thickness T9 gradually increasing as the distance from the molding layer to the light-emitting device 120 decreases. Consequently, the upper surface of the molding layer 130 may form a concave surface. Furthermore, the upper surface of the molding layer 130 may include regions with different inclinations.

[0303] When the upper surface of the molding layer 130 forms a concave surface, the inclination of the upper surface of the molding layer 130 can gradually increase with decreasing distance to the light-emitting device 120. The light emitted through the side surface of the light-emitting device 120 can be refracted by the surface of the molding layer 130 to be directed to the substrate 110 and can be reflected upwards from the substrate 110 to be extracted outwards.

[0304] However, the present invention is not necessarily limited to this and the molding layer may Petition 870250108390, dated 11 / 26 / 2025, pp. 82 / 119 77 / 86 have the same thickness as T9 depending on their location.

[0305] The third light control layer 290 can be arranged between adjacent light-emitting devices 120 to be placed between the molding layer 130 and the first microelement 140. More specifically, the third light control layer 290 can be arranged below the connection portion 244 of the first microelement 140.

[0306] The third light control layer 290 may have the same or similar characteristics to the first light control layer 270 and the second light control layer 280 described above.

[0307] For example, the third light control layer 290 may include a third light control layer 1 292 that prevents light from being emitted between the light-emitting devices 120. The third light control layer 1 292 may have a thickness that gradually decreases towards the light-emitting device 120.

[0308] As the thickness of the third light control layer 290 increases, the thickness of the molding layer 130 may decrease. That is, the thickness of the third light control layer 290 may be inversely proportional to the thickness of the molding layer 130. However, the present invention is not limited to this and the third light control layer 1 292 may have a uniform thickness.

[0309] The third light control layer 290 may further include a third light control layer 296 disposed between the molding layer 130 and the third light control layer 292. The shape and characteristics of the third light control layer 296 may be similar. Petition 870250108390, dated 11 / 26 / 2025, pp. 83 / 119 78 / 86 to the format and characteristics of the third layer 1 of light control 292.

[0310] The third light control layer 296 can act as a layer that prevents light emission between light-emitting devices 120.

[0311] The third light control layer 296 can perform an additional light blocking function to prevent the heat generated during the operation of the light-emitting devices 120 from causing the third light control layer 1 292 to crack and leak light.

[0312] The third light control layer 290 may further include a material layer 294 disposed between the third light control layers 1 and 2 292, 296.

[0313] Material layer 294 may be adjacent to a lower surface of the third light control layer 292 and to an upper surface of the third light control layer 296.

[0314] Material layer 294 may include a smaller amount of light-blocking material than the third light-control layer 1 292 and the third light-control layer 2 296, or it may be free of light-blocking material. Thus, layers with different light transmittances may be arranged alternately between the light-emitting devices 120 to effectively block the light.

[0315] The thickness of the material layer 294 may gradually decrease outwards, from a central portion thereof, towards the light-emitting device 120. As the thickness of the material layer 294 increases, the thickness of the molding layer 130 may decrease. The thickness of the layer Petition 870250108390, dated 11 / 26 / 2025, pp. 84 / 119 79 / 86 of material 294 can be inversely proportional to the thickness of the molding layer 130. However, the present invention is not limited to this and the layer of material 294 can be formed with a uniform thickness.

[0316] As described above, a CR crack line can be formed through the substrate 110, the molding layer 130 and the third light control layer 290 of the light emitting apparatus 100, and the first microelement 140 can cover the CR crack line.

[0317] In this way, the CR crack line can be prevented from being observed by a user when viewed from the outside. The first microelement 140 is arranged to cover the CR crack line and extends to cover the upper surface of the collimator 135.

[0318] As the light-emitting surface corresponding to the top surface of the first microelement 140 is formed as a flat surface F, the first microelement 140 can have the thinnest thickness on the top surface of the collimator 121 and the thickest thickness on the top surface of the third light control layer 290.

[0319] Next, FIG. 21 is a cross-sectional view of a light-emitting apparatus 100 according to another embodiment. The light-emitting apparatus 100 shown in FIG. 21 may have the same or similar structure to the light-emitting apparatus 100 shown in FIG. 20, except that the first microelement 140 is composed of a plurality of layers.

[0320] The first microelement 140 may include a first microelement 140a, which covers the collimator 135 and the third light control layer 290, and a first microelement 2 Petition 870250108390, dated 11 / 26 / 2025, pp. 85 / 119 80 / 86 140b arranged in the first microelement 140a.

[0321] As the first 2 microelements 140b cover the upper surface of the collimator 135, a curved U-shaped surface can be formed on a lower surface of the first 2 microelements 140b, i.e., at an interface of the first 2 microelements 140b with the collimator 135.

[0322] In other words, the curved U-surface of the first microelement 140 can be formed on the lower surface of the first microelement 140b.

[0323] An upper surface of the first microelement 1 140a is the first surface of the first microelement 140, which is the light-emitting surface, and can form a planar surface F. A boundary surface between the first microelement 1 140a and the first microelement 2 140b can also form a planar surface F.

[0324] That is, the upper and lower surfaces of the first microelement 1 140a can be formed parallel to each other and can be separated from the collimator 135 by the first microelement 2 140b in the vertical direction.

[0325] A vertical separation distance T10 between the bottom surface of the first microelement 140a and the highest point (vertex) of the collimator 135 may be smaller than a vertical separation distance T11 between the bottom surface of the first microelement 140a and the third light control layer 290.

[0326] Furthermore, the vertical separation distance T11 between the bottom surface of the first microelement 140a and the third light control layer 290 can be greater than the thickness T2 of the light-emitting device 120. Petition 870250108390, dated 11 / 26 / 2025, pages 86 / 119 81 / 86

[0327] Furthermore, the vertical separation distance T10 between the lower surface of the first microelement 140a and the highest point (vertex) of the collimator 135 can be greater than the thickness of the light-emitting device 120.

[0328] A cooling path to cool the air can be formed in a spaced separation region of the first microelement 140a. When the first microelement 2 140a fills the separation region, the first microelement 2 140a can perform the same function as the buffer layer 190 described above.

[0329] As a buffer layer filling the separation region, the first 2 140b microelements can be formed to cover the CR crack line.

[0330] Next, FIG. 22 is a cross-sectional view of a light-emitting apparatus 100 according to another embodiment. The light-emitting apparatus 100 shown in FIG. 22 may have the same or similar structure to the light-emitting apparatus 100 shown in FIG. 21, except that the first microelement 1 140a includes a P-filler, the third light control layer 290 is omitted, and the partition 180 is arranged on the upper surface of the substrate 110.

[0331] Referring to FIG. 22, a 180 partition can be arranged between the light-emitting devices 120 and at least one region of the first microelements 140a, 140b can overlap vertically with the 180 partition.

[0332] A side surface of the 180 partition may form a sloping surface M. Alternatively, the side surface of the 180 partition may include a curved surface.

[0333] A distance from the lateral surface of Petition 870250108390, dated 11 / 26 / 2025, pages 87 / 119 The distance from the 82 / 86 partition 180 to the light-emitting device 120 may vary, and the distance from the side surface of the 180 partition to at least one electrode on the light-emitting device 120 may vary.

[0334] Thus, the brightness in a region that overlaps vertically with the 180 partition may be different from the brightness in other regions to increase sharpness contrast.

[0335] The upper surface of the 180 partition may be arranged higher than the upper surface of the light-emitting device 120. The 180 partition may be formed of an insulating material and may reflect or absorb at least a fraction of the light. Thus, the light generated by the light-emitting device 120 may be prevented from affecting the light generated by another light-emitting device 120 adjacent to it, thereby avoiding photoluminescence and increasing color clarity.

[0336] The lower surface of the first microelement 140a can contact at least one region of the partition 180. For example, the lower surface of the first microelement 140a can contact the highest point of the partition 180. Thus, as the periphery of the light-emitting device 120 is surrounded by the partition 180 and the collimator 135 and the first microelement 140 are arranged on the upper surface of the light-emitting device 120, the light-emitting device 120 can be isolated by the first microelement 140 and the partition 180. In this way, the color contrast according to the region can be increased. However, the present invention is not limited to this and the first microelement 140a can be spaced from the partition 180.

[0337] The connecting portion 244 of the first microelement 140 can overlap vertically with partition 180 by at least Petition 870250108390, dated 11 / 26 / 2025, pp. 88 / 119 83 / 86 a region of the same. Thus, the path of the light generated by the light-emitting device 120 can be altered by the partition 180 and directed to the collimator 135.

[0338] Although not shown in the figures, it will be evident that the second microelement 160 described above can also be applied to the light-emitting apparatus 100 shown in FIG. 13 to FIG. 22.

[0339] The light-emitting apparatus 100 described above may constitute a light-emitting module and one or more light-emitting modules may form a single display apparatus 10000.

[0340] In this embodiment, one or more light-emitting devices 120 can be arranged on the substrate 110. A plurality of light-emitting devices 120 can be aligned on the substrate 110.

[0341] The number of light-emitting devices 120 arranged on the substrate 110 is not particularly limited to a certain number of light-emitting devices. For example, the light-emitting devices 120 can be arranged in a 2x2 array on the substrate 110, without being limited to these. Thus, the light-emitting devices 120 can be arranged in various arrays (n χ m, n=1, 2, 3, 4, ..., m=1, 2, 3, 4, ...). The substrate 110 can include scan lines and data lines to independently drive each of the light-emitting devices 120 in the light-emitting apparatus 100.

[0342] FIGS. 23A to FIGS. 23D are schematic perspective views of various display devices 10000 according to exemplary modalities. Petition 870250108390, dated 11 / 26 / 2025, pp. 89 / 119 84 / 86

[0343] Referring to FIG. 23A, a display apparatus 10000 may include a panel substrate 10010 and a plurality of pixel modules 1000. Each of the pixel modules 1000 represents a light-emitting module including a plurality of light-emitting apparatus 100.

[0344] The pixel module 1000 may include a plurality of light-emitting devices 120, in which at least three light-emitting devices may be arranged horizontally spaced from each other. The plurality of light-emitting devices 120 may emit light with different peak wavelengths. The pixel module 1000 may further include an auxiliary light-emitting device 120 grouped with the three light-emitting devices 120.

[0345] When any of the light-emitting devices 120 does not emit light, the auxiliary light-emitting device 120 may be switched on instead of the light-emitting device 120. In a group, the number of auxiliary light-emitting devices 120 may be 25% or less of the total number of light-emitting devices 120.

[0346] In another embodiment, the pixel module 1000 may include a plurality of light-emitting devices 120, in which at least three light-emitting layers may be stacked vertically to form a single stack of light-emitting devices 120, which may emit light with different peak wavelengths.

[0347] The 10000 pixel module may also include an auxiliary light-emitting device 120 grouped with the light-emitting devices 120. Thus, when any of the light-emitting devices 120 does not emit light, the auxiliary light-emitting device 120 may be switched on instead. Petition 870250108390, dated 11 / 26 / 2025, pages 90 / 119 85 / 86 of the light-emitting device 120. In a group, the number of auxiliary light-emitting devices 120 may be 50% or less of the total number of light-emitting devices 120.

[0348] The display device 10000 may include a smart watch 10000a, a wearable display device 10000b, such as a headset or VR glasses, an AR display device 10000c, such as augmented reality glasses, indoor or outdoor display devices 10000d, 10000e, such as micro-LED TVs and signage, without being limited to these. The panel substrate 10010 and the plurality of pixel modules 1000 may be arranged within the display device.

[0349] The 10010 panel substrate may include circuits for passive matrix drive or active matrix drive. In some embodiments, the 10010 panel substrate may include interconnects and resistors, and in other embodiments, the 10010 panel substrate may include interconnects, transistors, and capacitors. The 10010 panel substrate may also be provided on a top surface with pads that can be electrically connected to the circuits contained therein.

[0350] In one embodiment, the plurality of 1000 pixel modules is aligned on the 10010 panel substrate. Each of the 1000 pixel modules may include a 110 circuit board, a plurality of 120 light-emitting devices, and a molding layer covering the 100 light-emitting devices.

[0351] The 10000a smartwatch may have a brightness of 500 to 1500 cd / m2 (or nits) or more, and the brightness of the 10000a smartwatch may be adjusted based on the external lighting. The 10000b wearable display device, such as a headset or glasses, Petition 870250108390, dated 11 / 26 / 2025, pp. 91 / 119 86 / 86 VR may have a brightness of 150 to 200 cd / m2 (or nits) or more, or may have a viewing angle of 50 degrees or more. Indoor or outdoor display devices 10000d, 10000e, such as micro-LED TVs or signage boards, may have a brightness of 1,000 cd / m2 (or nits) or more, or may have a viewing angle of 80 degrees or more, particularly 3,000 cd / m2 (or nits) or more for outdoor use.

[0352] The 10000d, 10000e display devices include a plurality of P1, P2 panels arranged in rows and columns and fixed to a frame, in which each of the P1, P2 panels is provided with a plurality of micro-LED pixels, which can be switched on or off or allow the light intensity to be adjusted in response to the supply of electricity or signals. The plurality of P1, P2 panels can be connected to an external power supply via respective connectors or can be electrically connected to each other via connectors.

[0353] Although some exemplary embodiments have been described herein with reference to the accompanying figures, it should be understood that various modifications and alterations may be made by those skilled in the art without departing from the spirit and scope of the present invention, as defined by the claims and their equivalents. Therefore, the scope of the present invention should not be limited to the detailed description, but limited by the claims accompanying it and their equivalents. Petition 870250108390, dated 11 / 26 / 2025, pp. 92-119

Claims

1 / 5 CLAIMS 1. Light-emitting apparatus (100), characterized by comprising a substrate (110), at least one light-emitting device (120) disposed on a surface of the substrate (110) and a molding layer (130) covering at least one region of the light-emitting device (120) and a first microelement (140) disposed above the light-emitting device (120), wherein the first microelement (140) includes a curved surface (U) formed in at least one region of at least one of an upper surface and a lower surface thereof.

2. Light-emitting apparatus (100), according to claim 1, characterized in that the first microelement (140) is integrally formed with the molding layer (130).

3. Light-emitting apparatus (100), according to claim 1, characterized in that the upper surface of the first microelement (140) includes a convex surface (CV).

4. Light-emitting apparatus (100), according to claim 1, characterized in that the first microelement (140) includes a plurality of first submicroelements (142) projecting from an upper surface thereof.

5. Light-emitting apparatus (100), according to claim 1, characterized by a plurality of light-emitting devices (120) being arranged on the substrate (110) being spaced from each other and Petition 870250088094, dated 09 / 29 / 2025, p. 11 / 498 2 / 5 first microelement (140) is arranged between non-micro domains (NM) in which a planar surface F is formed.

6. Light-emitting apparatus (100), according to claim 1, characterized in that a plurality of light-emitting devices (120) are arranged on the substrate (110) to be spaced apart from each other and a recessed concave surface (CC) is formed in a region between adjacent light-emitting devices (120) to face an upper surface of the substrate (110).

7. Light-emitting apparatus (100), according to claim 1, characterized by further comprising a partition (180) disposed in a region between adjacent light-emitting devices (120) on an upper surface of the substrate (110), wherein a plurality of light-emitting devices (120) are disposed on the substrate (110) to be spaced from each other.

8. Light-emitting apparatus (100), according to claim 7, characterized in that the partition (180) includes an inclined surface (M) formed on a lateral surface thereof.

9. Light-emitting apparatus (100), according to claim 7, characterized in that the substrate (110) includes an electrode (115) disposed on its upper surface and electrically connected to the light-emitting devices (120), and the partition (180) covers a portion of the electrode (115).

10. Light-emitting apparatus (100), according to Petition 870250088094, dated 09 / 29 / 2025, page 12 / 498 3 / 5 claim 1, characterized in that the first microelement (140) includes at least one type of filling (P).

11. Light-emitting apparatus (100), according to claim 1, characterized by a plurality of light-emitting devices (120) being arranged on the substrate (110) to be spaced from each other and the first microelement (140) including a plurality of guide portions 242 corresponding to the upper portions of the light-emitting devices (120) and constituting the curved surface (U).

12. Light-emitting apparatus (100), according to claim 11, characterized in that each of the guide portions (242) includes curved U-shaped surfaces formed on the upper and lower surfaces thereof.

13. Light-emitting apparatus (100), according to claim 11, characterized by further comprising a collimator (135) disposed between an upper surface of the light-emitting device (120) and the lower surface of the guide portion (242).

14. Light-emitting apparatus (100), according to claim 11, characterized in that the first microelement (140) further includes a connecting portion (244) connecting the adjacent guide portions (242) to each other, and a first light control layer (270) being disposed on a surface of the connecting portion (244) opposite the substrate (110).

15. Light-emitting apparatus (100), according to claim 11, characterized by further comprising a buffer layer (190) disposed between the molding layer (130) and the first microelement (140).

16. Light-emitting apparatus (100), according to claim 11, characterized in that the first microelement (140) further includes a connecting portion (244) connecting adjacent guide portions (242) to each other, and a second light control layer (280) being disposed on a surface of the connecting portion (244) on one side of the substrate (110).

17. Light-emitting apparatus (100), according to claim 11, characterized by further comprising a second light control layer (280) adjacent to a lateral surface of the light-emitting apparatus (120), wherein the first microelement (140) further includes a connecting portion (244) connecting adjacent guide portions (242) to each other.

18. Light-emitting apparatus (100), according to claim 11, characterized by further comprising a third light control layer (290) disposed between the molding layer (130) and the first microelement (140) in a region between adjacent light-emitting devices (120).

19. Light-emitting apparatus (100), characterized by comprising a substrate (110), a plurality of light-emitting devices (120) arranged on a surface of the substrate (110), a first microelement (140) arranged above the plurality of light-emitting devices (120) and light control layers (270, 280, 290) arranged between adjacent light-emitting devices (120), wherein the first microelement (140) includes a curved surface (U) formed in at least one region of at least one of its upper and lower surfaces.

20. Light-emitting apparatus (100), characterized by comprising a substrate (110), a plurality of light-emitting devices (120) arranged on a surface of the substrate (110), a first microelement (140) arranged above the plurality of light-emitting devices (120) and a collimator (135) arranged between the upper surfaces of the light-emitting devices (120) and a lower surface of the first microelement (140) and including a curved surface (U), wherein an upper surface of the first microelement (140) is a flat surface (F). Petition 870250088094, dated 29 / 09 / 2025, p. 15 / 498

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