A pedestal and a semiconductor processing apparatus including the same

Abstract

Embodiments of the present application provide a pedestal and a semiconductor processing apparatus including the same. The pedestal is used to carry a workpiece being processed, and includes a heater, an isolation layer, and a radio frequency electrode stacked in sequence, the isolation layer being an insulating material to electrically isolate both the heater and the radio frequency electrode. The pedestal of embodiments of the present application electrically isolates the heater from the radio frequency electrode, reducing the use of filters.

Description

Technical Field

[0001] Embodiments of the present invention relate to a base and a semiconductor processing apparatus including the base. Background Technology

[0002] In the hard mask process of integrated circuit manufacturing, both radio frequency (RF) and direct current (DC) power supplies and a high-temperature process environment are required to etch the target material and deposit it onto the substrate. In 28nm processes, low-frequency (e.g., 13MHz) and low-pressure RF are generally sufficient to meet the process requirements.

[0003] With the development of the integrated circuit manufacturing industry, 14 / 16nm processes have gradually become obsolete. In the field of hard masks, film deposition requires higher density. Therefore, it is necessary to introduce very high frequencies (such as 60MHz), high gas pressure, and higher process temperatures to meet process requirements. Moreover, radio frequency power needs to be added to the substrate. With the increasing complexity of the hardware, many problems need to be solved. Summary of the Invention

[0004] According to embodiments of the present invention, a base and a semiconductor processing apparatus including the base are provided. The heater in the base is isolated from the radio frequency electrode potential, thereby protecting the heater from the influence of the radio frequency power supply. Furthermore, the heater and its connected wiring can be grounded, reducing the use of filters within the system.

[0005] According to one embodiment of the present invention, a base is provided for supporting a workpiece to be processed, wherein the base includes a heater, an isolation layer and a radio frequency electrode arranged in sequence, the isolation layer being an insulating material to isolate the potentials of the heater and the radio frequency electrode.

[0006] In some examples, the heater is configured to be grounded.

[0007] In some examples, a first gas channel is provided between the heater and the isolation layer, the first gas channel being connected to a gas supply line for introducing inert gas into the first gas channel; a second gas channel is provided between the isolation layer and the radio frequency electrode, and the isolation layer has a connecting channel that connects the first gas channel and the second gas channel.

[0008] In some examples, the heater has a plurality of first annular grooves arranged concentrically on the surface opposite to the insulating layer, and a first radial groove that connects the plurality of first annular grooves to each other; the first annular grooves and the first radial grooves form the first gas channel.

[0009] In some examples, the surface of the radio frequency electrode opposite to the isolation layer is uniformly provided with multiple second annular grooves distributed in concentric circles, and a second radial groove connecting the multiple second annular grooves to each other; the second annular grooves and the second radial grooves form the second gas channel.

[0010] In some examples, the contact surfaces between the heater, the insulating layer, and the radio frequency electrode are sealed together to seal the inert gas within the first gas channel and the second gas channel.

[0011] In some examples, the heater is provided with a third gas channel, which is connected to a gas supply line for introducing inert gas into the third gas channel; the radio frequency electrode is provided with a fourth gas channel, and the isolation layer is provided with a connecting channel, through which the third gas channel and the fourth gas channel are connected.

[0012] In some examples, the heater and the insulating layer, as well as the insulating layer and the radio frequency electrode, are connected by sintering or electroplating.

[0013] According to another embodiment of the present invention, a semiconductor processing apparatus is provided, including a chamber and a radio frequency source, wherein a base as described in any of the above claims is disposed in the chamber, and the radio frequency source is used to provide radio frequency power to the radio frequency electrodes in the base.

[0014] In some examples, the chamber is a physical vapor deposition chamber. Attached Figure Description

[0015] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings of the embodiments will be briefly described below. Obviously, the drawings described below only relate to some embodiments of the present invention and are not intended to limit the present invention.

[0016] Figure 1 This is a schematic diagram of the structure of a base according to an embodiment of the present invention;

[0017] Figure 2 This is a schematic diagram of the back-blowing channel in the base according to an embodiment of the present invention;

[0018] Figure 3 This is a schematic diagram of a semiconductor processing device including a base according to an embodiment of the present invention. Detailed Implementation

[0019] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the described embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0020] Unless otherwise defined, the technical or scientific terms used in this invention shall have the ordinary meaning understood by one of ordinary skill in the art to which this invention pertains. The terms "first," "second," and similar terms used in this invention do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as "comprising" or "including" mean that the element or object preceding the word encompasses the elements or objects listed following the word and their equivalents, without excluding other elements or objects.

[0021] In a processing apparatus including a heating base, the heater and the lower electrode of the processing apparatus are integrated into a single structure. Only DC power can be applied within the process chamber of this apparatus, eliminating radio frequency (RF) isolation issues, and the overall structure is relatively simple. However, many current manufacturing processes require the introduction of RF power. If RF power is introduced into this processing apparatus, the heater's lack of a shielded grounded casing will cause ignition below the heater.

[0022] In another type of processing equipment that includes a heating base, the heating base integrates an RF (Radio Frequency) introduction component, enabling the application of RF power. Furthermore, in conjunction with the introduction of RF power, an isolation layer and a shielding layer are added to the base to meet the requirements for applying RF power in the process. For example, the base portion of this processing equipment includes a heater body (which is suspended). Additionally, the RF introduction wire, thermocouple, and heating wire are all connected to the heater body. Therefore, the heater body end becomes the RF end, integrated with the RF electrode. To prevent RF ignition below the chamber, a grounding shield is also installed below the heater body, and an isolation ceramic is placed between the heater body and the grounding shield to isolate the RF end (heater body) from ground (grounding shield), preventing ignition below the chamber. Furthermore, to seal the vacuum, O-rings are placed between the heater body and the isolation ceramic, and between the isolation ceramic and the grounding shield, to prevent internal leakage within the heater. Additionally, since O-rings are generally made of elastic material, to prevent nearby O-rings from burning out when the heater temperature is too high, an O-ring cooling water path is also required near the O-rings.

[0023] The aforementioned RF-enabled heating base is a sandwich structure, with the RF electrode and heater (an integrated structure) on the top layer. Because the RF electrode, thermocouple, and heating wire are all made of metal, RF power can interfere with the power supply and testing equipment through the thermocouple and heating wire, necessitating the addition of filters. In other words, the heating wire, thermocouple, cooling water circuit, and RF lead-in line of the heater in the base are all at the same potential. To prevent RF interference, filters must be added to the heating wire and thermocouple terminals, which increases the size and cost of the integrated base box. Therefore, the lower electrode (RF electrode) in the aforementioned base has a complex load, making process control difficult after applying bias. Furthermore, the sandwich structure in the aforementioned base has two layers of sealing rings (O-rings), posing a risk of internal leakage during installation, and one of the O-rings is adjacent to the heater, posing a risk of burnout.

[0024] Embodiments of the present invention provide a base and a semiconductor processing apparatus including the base. The base according to an embodiment of the present invention is used to support a workpiece to be processed and includes a heater, an isolation layer, and a radio frequency electrode stacked sequentially. The isolation layer is an insulating material to isolate the potentials of the heater and the radio frequency electrode. Because the radio frequency electrode is potential-isolated from the heater, the heater is not affected by the radio frequency power supply, allowing the heater and its connected wiring to be grounded, thereby avoiding the need for additional filters.

[0025] The technical solutions of the present invention will be further described and illustrated below according to some embodiments of the present invention.

[0026] Example 1

[0027] Figure 1 This is a schematic diagram of a heating base according to an embodiment of the present invention. Figure 1 As shown, the base body of the base includes a radio frequency electrode 301, an isolation layer 302, and a heater 303 stacked sequentially from top to bottom along the vertical direction in the figure. The radio frequency electrode 301 is an electrode used to apply radio frequency power. Here, the electrode 301 is referred to as a radio frequency electrode because it can be applied with radio frequency power, but it does not mean that it cannot apply other types of power. The isolation layer 302 is an insulating material to isolate the heater 303 and the radio frequency electrode 301.

[0028] In some examples, the heating base also includes an inlet line extending into the interior of the base body from the side of the heater 303 facing away from the insulating layer 302. For example, the inlet line could be... Figure 1Any one or more of the RF lead-in line, backblown gas supply conduit, and thermocouple shown below will be described in more detail below. For example, the lead-in line includes RF lead-in line 306, which passes through heater 303 and isolation layer 302 and is electrically connected to RF electrode 301 to provide RF power to RF electrode 301. RF lead-in line 306 includes RF signal line 310 for transmitting RF signals, and heater 303 is electrically isolated from RF signal line 310 in RF lead-in line 306.

[0029] In this specification, the electrode wires or conduits passing through the heater 303 are collectively referred to as lead-in lines. The term "lead-in lines" is used here for ease of explanation regarding the connection relationship and sealing method between these lead-in lines and the heater. For example, if radio frequency power is required, a radio frequency lead-in line must extend from the side of the heater 303 away from the isolation layer 302 into the base body and pass through both the heater 303 and the isolation layer 302. Additionally, thermocouples for temperature measurement of the base or other components may be included. To provide back-blowing gas for the back-blowing channels required for heat conduction between the heater 303 and the isolation layer 302, and between the isolation layer 302 and the electrode layer 301, a back-blowing gas supply conduit passing through the heater 303 may be added. Of course, lead-in lines may also include other lines besides those described above.

[0030] In some examples, the lead-in line and heater 303 are sealed by welding or by a metal seal. Therefore, the heater and lead-in line can be sealed as a whole, reducing the risk of internal leakage in the base and simplifying the sealing structure. For example, if a metal seal is used, the metal seal may include a copper ring or a metal O-ring. For welding seals, for example, welding can be performed on the lower surface of the heater where the lead-in line is adjacent to the heater. Alternatively, welding can be performed on both the upper and lower surfaces of the heater where the lead-in line is adjacent to the heater.

[0031] The relative positional relationship and connection relationship between the introduced line and the heater 303 described above are merely exemplary. Based on the isolation layer 302 formed by insulating material isolating the potentials of the heater 303 and the radio frequency electrode 301, any other suitable scheme can be adopted for the relative positional relationship and connection relationship between the introduced line and the heater 303.

[0032] The potential isolation between the aforementioned RF signal lines and the heater, as well as the sealing methods between the various input lines and the heater, will be described in more detail below for each component.

[0033] heater

[0034] For example, heater 303 includes heater body 3031 and heating wire 3032. Heater body 3031 is, for example, a metal plate, and may be made of a metal with good thermal conductivity. For example, heater body 3031 is made of aluminum, stainless steel, etc., but embodiments of the present invention are not limited to this. For example, heating wire 3032 is disposed on the side of heater body 3031 opposite to the isolation layer 302. For example, this side surface of heater body 3031 may include grooves for receiving the heating wire, and the heating wire 3032 may be disposed in the grooves of heater body 3031. However, embodiments of the present invention are not limited to this; heating wire 3032 may also be formed at other locations on heater body 3032, for example, it may be disposed inside heater body 3031. For example, heating wire 3032 is uniformly arranged on heater body 3031, thereby making the temperature distribution of heater 303 more uniform at various locations in its planar direction, which is beneficial for uniform heating of the wafer to be processed supported by the substrate. The thickness of the heater body 3031 can be arbitrarily selected while satisfying its heat transfer and mechanical properties, and the shape and size of its plane can also be arbitrarily adjusted according to actual needs. For example, in order to heat the structure above the entire radio frequency electrode 301, the edge of the heater body 3031 may be aligned with the edge of the radio frequency electrode 301 at least in the direction perpendicular to the heater body, or may extend beyond the edge of the radio frequency electrode 301 in the lateral direction.

[0035] RF electrodes

[0036] The radio frequency (RF) electrode 301 is an electrode for applying the power supply voltage required for the processing technology. As described above, the power supply that can be applied to it includes, but is not limited to, an RF power supply. For example, the electrode can be supplied with a DC power supply or an RF power supply. The RF electrode 301 can be a metal, such as aluminum, copper, gold, stainless steel, etc., and the embodiments of the present invention are not particularly limited in this regard. In addition, an insulating layer, such as a ceramic layer or an anodized layer, can be provided above the RF electrode 301 (that is, on the side opposite to the isolation layer 302). In the embodiments of the present invention, the RF electrode 301 realizes the input of the RF power supply through the RF lead-in line described in more detail later, thereby meeting the needs of processes that require a substrate-loaded RF power supply.

[0037] isolation layer

[0038] An isolation layer 302 is disposed between the heater 303 and the radio frequency electrode 301 to provide physical and electrical isolation between the heater 303 and the radio frequency electrode 301. Therefore, the radio frequency power supply voltage or other power supply voltage applied to the radio frequency electrode 301 may not be applied to the heater 303. Thus, in embodiments of the present invention, the radio frequency electrode 301 and the heater 303 can be potential isolated. For example, when the heater according to embodiments of the present invention is installed in a processing device, it can be configured to be grounded, so that several other components or lines connected to the heater can also be grounded, thereby avoiding the need to install filters to prevent radio frequency power supply interference on some lines.

[0039] Furthermore, the material of the isolation layer 302 may be, for example, a high-temperature resistant insulating material. For instance, the isolation layer 302 may be formed of ceramic. An isolation layer formed of ceramic material can make the heat generated by the heater more uniformly distributed in the planar direction of the electrode layer 301, thereby ensuring the consistency of temperature parameters at different locations of the wafer during processing.

[0040] Furthermore, the thickness of the insulating layer 302 is set to ensure a safe insulating distance between the electrode layer 301 and the heater 303. Therefore, in this embodiment of the invention, the thickness of the insulating layer 302 can be calculated and selected based on the actual conditions of the equipment or process parameters.

[0041] The connection or sealing method between the incoming line and the heater is further explained below. For example... Figure 1 As shown, the heater 303 in the base is located below the entire base structure. As long as the heater 303 can seal the vacuum, the chamber vacuum will not leak. The isolation layer 302 is within the chamber vacuum environment, so there is no need to consider the sealing of the isolation layer 302 to the atmospheric environment. Therefore, between the layers above the heater 303 in the base, there is no need for measures to isolate the atmosphere from the chamber vacuum, thereby avoiding the use of O-rings near the heater and further avoiding the risk of the elastic O-rings burning out when the heater 303 is at a high temperature.

[0042] RF lead wire

[0043] like Figure 1As shown, the RF lead-in line 306 can be, for example, a coaxial cable. For example, the RF lead-in line 306 includes a center conductor 310 located at the center of the coaxial cable, a shielding layer 312 surrounding the center conductor 310, and a filler 311 located between the center conductor 310 and the shielding layer 312. The center conductor 310 can be made of a highly conductive metal, such as gold or copper. The center conductor 310 serves as an RF signal line for transmitting RF power signals to apply RF power to the RF electrode 301. The shielding layer 312 can be made of a metal layer and is used to shield the RF power signals to prevent interference with other components. For example, the shielding layer 312 can be configured to be grounded. The filler 311 is an insulating material, such as polytetrafluoroethylene or ceramic. For example, the filler 311 has good insulating properties to insulate the center conductor 310 from the shielding layer 312. The material composition of each part of the RF lead-in line described above is exemplary; any other suitable material can be selected according to actual needs based on embodiments of the present invention. Furthermore, the dimensions of the coaxial cable can be calculated from the required current withstand capacity and impedance, allowing for the adoption of different relevant parameters in different application environments. For example, for RF lead-in lines, their characteristic impedance can be controlled by the filler material and size of filler 311.

[0044] For example, an RF lead-in line extends into the base body from the side of heater 303 away from the isolation layer 302, passes through heater 303 and isolation layer 302, and is electrically connected to RF electrode 301. For example, center conductor 310 is electrically connected to RF electrode 301, thereby providing RF power signal to RF electrode 301. At the surface passing through the heater, the RF lead-in line 306 can be sealed to the heater body 3031 of heater 303. For example, the shielding layer 312 of RF lead-in line 306 is welded to heater body 3031 for sealing or sealed by a metal seal. In this way, not only is the sealing between RF lead-in line and heater guaranteed, but the same potential can also be applied to the shielding layer and heater, for example, to ground.

[0045] Furthermore, for RF lead-in lines using coaxial cables, the end furthest from the heater 303 may be exposed to the atmosphere. Therefore, the end of the RF lead-in line 306 furthest from the base body can also be sealed. For example, the end of the RF lead-in line 306 furthest from the base body can be sealed with a copper ring 304. Additionally, since the end of the RF lead-in line 306 furthest from the base body is far from the heater 303, the sealing method is not limited to using a copper ring; other sealing methods can also be used, such as using an elastic sealing ring.

[0046] Back-blown gas supply pipeline

[0047] likeFigure 1 As shown, an isolation layer 302 exists between the radio frequency electrode 301 and the heater 303 to isolate them. To better transfer the heat generated by the heater 303 to the radio frequency electrode 301 and above it, a base according to an embodiment of the present invention further includes back-blowing channels 309 located at the interface between the isolation layer 302 and the heater 303, and at the interface between the isolation layer 302 and the radio frequency electrode 301. For example, the back-blowing channel 309 includes a first back-blowing channel located at the interface between the isolation layer 302 and the heater 303, and a second back-blowing channel located between the isolation layer 302 and the radio frequency electrode 301. Additionally, a connecting channel 307 may be included connecting the back-blowing channels 309 at the two interfaces and extending through the isolation layer 302. When gas flows within the back-blowing channel and the connecting channel, it can facilitate the transfer of heat generated by the heater 303 between the heater 303 and the isolation layer 302, and between the isolation layer 302 and the electrode layer 301. In addition, since the back-blowing channels at the interface between the isolation layer 302 and the heater 303 and at the interface between the isolation layer 302 and the radio frequency electrode 301 are connected through the connecting channel that penetrates the isolation layer, heat can also be transferred from the heater 303 to the area below the radio frequency electrode 301 by the back-blowing gas flowing over the surface of the heater, thereby improving the heating efficiency.

[0048] Figure 2 The first back-blowing channel is schematically shown at the cross-section located between the heater 303 and the insulating layer 302. (As shown) Figure 2 As shown, multiple first annular grooves 3091, arranged concentrically, are uniformly disposed on the surfaces of the heater 303 and the isolation layer 302, and a first radial groove 3092 connects the multiple first annular grooves 3091 to each other; the first annular grooves 3091 and the first radial grooves 3092 form a first gas channel 309 located between the heater 303 and the isolation layer 302. Figure 2 The diagram only schematically shows three first annular grooves and five first radial grooves; however, the number of first annular grooves and first radial grooves is not limited to this and can be arbitrarily selected according to the actual situation. Furthermore, multiple first annular grooves can be evenly or unevenly distributed along the radial direction, and multiple first radial grooves can also be evenly or unevenly distributed along the circumferential direction.

[0049] Similarly, multiple second annular grooves arranged concentrically on the surface of the RF electrode 301 opposite to the isolation layer 302, and a second radial groove connecting the multiple second annular grooves to each other, can be uniformly disposed thereon; the second annular grooves and the second radial grooves form a second gas channel. The distribution pattern of the multiple second annular grooves and the multiple second radial grooves can be referred to Figure 2The first annular groove and the first radial groove are shown. Furthermore, the number and distribution of the second annular groove and the second radial groove along the planar direction may be the same as or different from the first annular groove and the first radial groove.

[0050] In some examples, the backblown gas channel can also be located inside the RF electrode and the heater. For example, a third gas channel is provided inside the heater 303, which is connected to a gas supply line for introducing inert gas into the third gas channel; a fourth gas channel is provided inside the RF electrode 301, and a connecting channel is provided in the isolation layer 302, through which the third and fourth gas channels are connected. The specific configuration of the third and fourth gas channels can refer to the above combination. Figure 2 The first back-blowing gas channel is described in its configuration. For example, the third and fourth gas channels may each include an annular channel and a radial channel connecting the annular channels, but embodiments according to the present invention are not limited thereto. Furthermore, for the back-blowing channels in the base, one can be selected from a combination of the first and second back-blowing channels and a combination of the third and fourth back-blowing channels, or both combinations may be provided.

[0051] As mentioned above, the backblown gas needs to be introduced from the outside; therefore, a backblown gas supply pipe 313 is required to introduce the backblown gas. Figure 1 As shown, the back-blown gas supply pipe 313 also extends into the base body from the side of the heater 303 away from the isolation layer 302, and passes through the heater 303 to reach the interface between the heater 303 and the isolation layer 302. The back-blown gas supply pipe 313 is connected to the back-blown channel at the interface between the isolation layer 302 and the heater 303, and at the interface between the isolation layer 302 and the radio frequency electrode 301, thereby delivering back-blown gas to the back-blown channel. Similar to the radio frequency lead-in wire, the location where the back-blown channel passes through the heater 303 can be sealed by welding or by using a metal seal.

[0052] For the back-blown gas used, inert gases such as helium can be used, but embodiments of the invention are not limited to this. To prevent the back-blown gas from entering the chamber and affecting the processing, surface seals are provided between the heater 303 and the isolation layer 302, and between the isolation layer 302 and the radio frequency electrode 301. For example, since the sealing requirements between the back-blown gas and the chamber environment are not very high, O-rings are not required at these sealing interfaces, thus avoiding the risk of the elastic O-rings burning out near the heater. Figure 1As shown, for sealing the backblown gas, a surface seal is required on the surface of the heater 303 facing the insulating layer, the two opposing surfaces of the insulating layer 302, and the lower surface of the radio frequency electrode 301 facing the insulating layer 302. For example, surface seals between the heater 303 and the insulating layer 302, and between the insulating layer 302 and the radio frequency electrode 301, can be achieved through the contact of their smooth surfaces. That is, the contact surfaces of the heater 303, the insulating layer 302, and the radio frequency electrode 301 are sealed together to seal the inert gas within the first and second gas channels. Therefore, only smooth surfaces between the layers are needed to meet the corresponding sealing requirements, simplifying component complexity and reducing the risk of the elastic O-ring burning out. However, embodiments according to the present invention are not limited to this. For example, in some examples, the heater 303 and the insulating layer 302, and the insulating layer 302 and the radio frequency electrode 301, are connected by sintering or electroplating.

[0053] thermocouple

[0054] In some examples, the base also includes a temperature measuring device. For example, the base according to an embodiment of the invention includes a thermocouple 308. For example, the thermocouple 308 may also extend into the heater 303 from the side of the heater 303 away from the isolation layer 302 and reach the location where the temperature needs to be measured. Similar to the radio frequency lead-in and back-blowing conduit described above, the thermocouple 308 and the heater 303 may be sealed by welding or a metal seal at at least one surface through which it passes, which will not be elaborated further here. It should be noted that the base may include multiple thermocouples, and different thermocouples can measure the temperature at different locations, so their measuring ends can be set at different locations. For example, the thermocouple includes a shielding tube and a thermocouple wire located within the shielding tube, the shielding tube being welded to the heater or sealed by a metal seal.

[0055] In the above embodiments, the wiring through the heater was described using radio frequency lead-in lines, back-blown gas supply lines, and thermocouples as examples. However, the embodiments according to the present invention are not limited thereto. For example, in some embodiments, the base may include only one or more of these wirings; for example, in some of the above embodiments, back-blown gas is used for heat conduction at the interface between the heater 303 and the isolation layer 302, and at the interface between the isolation layer 302 and the radio frequency electrode 301. However, in some embodiments, heat conduction at the above two interfaces may not require back-blown gas. For example, heat can be conducted at the interface between the heater 303 and the isolation layer 302, and at the interface between the isolation layer 302 and the radio frequency electrode 301, by means of sintering, electroplating, etc., to improve heat transfer efficiency. In this case, a back-blown gas line is not required to introduce back-blown gas; therefore, the wiring through the heater in these embodiments may not include a back-blown gas line.

[0056] In other embodiments, the base may include other wiring passing through the heater besides the wiring described above. In the above embodiments, the wiring passing through the heater can be connected to the heater by welding or metal sealing, thereby forming a sealed unit. When the base is installed in the chamber of the processing equipment, the heater itself can be used for vacuum isolation between the atmospheric environment and the chamber environment, thus avoiding the need for O-rings to seal the layers above the heater on the base, and avoiding the risk of the elastic O-rings near the heater burning out when the heater is at high temperatures.

[0057] Cooling water circuit

[0058] In addition to the aforementioned wiring through the heater, the base according to some embodiments of the present invention may also include cooling water channels for cooling the heater 303. For example... Figure 1 As shown, the cooling water passage 305 is located below the heater 303. For example, the cooling water passage 305 can be located near the heating wire 3032 of the heater, thereby enabling better cooling of the heater. Alternatively, the cooling water passage can be connected to the heater by welding, resulting in a more robust structure. Furthermore, it should be noted that although referred to here as a "cooling water passage," the cooling medium flowing within it is not limited to water; any other suitable cooling medium can be used. Moreover, the cooling medium is not limited to a liquid; a suitable gas can also be used for cooling. Additionally, the cooling water passage includes an inlet and an outlet, both connected to pipes for inputting / outputting the cooling medium, forming a circulating cooling system. Furthermore, during the processing, the real-time temperature value obtained via a thermocouple can be used to determine whether the temperature exceeds a preset wafer temperature value. If the real-time temperature value exceeds the preset wafer temperature value, the coolant flow rate can be increased and / or the coolant temperature can be decreased.

[0059] bellows

[0060] In some embodiments of the invention, the base further includes a bellows 314 located on the side of the heater 303 opposite to the insulating layer 302. For example... Figure 1 As shown, one end of the bellows 314 is welded to the heater 303. For the aforementioned inlet lines, when introduced from the outside, they all pass through the hollow shaft of the bellows 314 to reach the heater 303. The bellows 314 forms a seal with the heater 303 by welding. When the bellows 314... Figure 1When the suspended end shown is connected to the processing equipment, the hollow shaft of the bellows 314 is in communication with the atmospheric environment. However, since the externally introduced lines and heaters are sealed by welding, a vacuum isolation between the atmospheric environment and the chamber environment can be maintained. This will be described in more detail in the subsequent processing equipment.

[0061] The above description of the embodiments mainly describes the physical connection structure between the various components, thereby ensuring sealing performance.

[0062] In addition to the improved sealing performance resulting from the aforementioned physical connection, the base according to embodiments of the present invention, due to the aforementioned connection structure, allows the thermocouples, heating wires, heater body, cooling water circuits, etc., on the heater to be potential-connected, that is, to maintain the same potential. Furthermore, all of the aforementioned components can be grounded, thereby avoiding the use of filters. Moreover, in some embodiments of the present invention, the bellows is made of a conductive material, with one end welded to the heater, while the other end can be connected to the chamber of the processing equipment. Thus, since the chamber is grounded, the heater and other components connected to it can also be grounded, simplifying the complexity of the processing equipment.

[0063] In addition, for the RF lead wire, since its shielding layer is made of metal and is configured to be grounded, its shielding layer can be soldered to the heater when the RF lead wire passes through the heater. This ensures both sealing performance and that both the shielding layer and the heater are at ground potential.

[0064] Example 2

[0065] This embodiment provides a semiconductor processing apparatus, such as a physical vapor deposition (PVD) apparatus. The apparatus includes a chamber and a radio frequency (RF) source. A base, as described in the above embodiment, is disposed within the chamber, and the RF source provides RF power to the RF electrodes in the base.

[0066] For example, the chamber is a physical vapor deposition (PVD) chamber.

[0067] For example, the base is located in the chamber, and the side of the heater facing away from the insulating layer is connected to the bottom wall of the chamber via a bellows. For example, the bellows may be made of a conductive material and is welded to the heater or sealed to the heater by a metal seal.

[0068] In other words, the end of the bellows opposite the end welded to the heater is connected to the bottom wall of the chamber. There is no particular limitation on how the bellows is connected to the bottom wall of the chamber. For example, as... Figure 3As shown, one end of the bellows 314 is welded to the flange 316, and then the flange is connected to the bottom wall of the chamber. These connections are, for example, sealing connections. That is, the end of the bellows connected to the bottom wall of the chamber is sealed to the bottom wall of the chamber.

[0069] For example, such as Figure 3 As shown, the lead-in line and cooling water passage pass through the hollow shaft of the bellows 314 and extend from the area defined by the bellows 314 in the bottom wall of the chamber 315 to the outside of the chamber 315. For example, the RF signal line 310 in the lead-in line is connected to the RF source 400, thereby enabling the RF source to apply RF power to the RF electrodes.

[0070] The hollow portion of the bellows beneath the heater is open to the atmospheric environment. However, as described above, since the heater and its connected wiring are sealed, the heater isolates the atmospheric environment from the chamber environment. Therefore, in embodiments of the present invention, the heater and the incoming wiring are integrated, reducing the risk of internal leakage during installation. Figure 3 As can be seen, the part inside the bellows below the heater is connected to the atmosphere, while the part outside the bellows inside the chamber belongs to the chamber environment, such as a vacuum environment.

[0071] Furthermore, since the heater of the pedestal is welded to the bellows, and the bellows is connected to the chamber, which is typically grounded, the heater's potential can also be grounded. Additionally, other components connected to the heater, such as thermocouples, cooling water circuits, and the shielding layer of the RF lead-in wires, can also be grounded. Therefore, it is no longer necessary to add additional filters to the heating wire and thermocouple ends to prevent RF interference, thus reducing the size and cost of the pedestal integration box (PIB).

[0072] like Figure 3 The diagram only schematically illustrates a portion of the processing equipment's structure; the processing equipment according to embodiments of the present invention may further include other components. For example, an upper electrode may be included on the top wall of the chamber. Therefore, the electrode layer on the base may be referred to as the lower electrode. For the base of the embodiments of the present invention, or the processing equipment including the base, the lower electrode load is simple, thus allowing for convenient process control after applying a bias voltage.

[0073] Furthermore, the processing equipment of this embodiment can use various heating bases described in Embodiment 1, and parts not described in this embodiment can be referred to the corresponding parts in Embodiment 1. Similarly, the beneficial technical effects brought about by the heating base described in Embodiment 1 can also be obtained in the process equipment of Embodiment 2, therefore, they will not be repeated here.

[0074] The descriptions of the above embodiments are not limiting. For components or arrangements not mentioned in the above embodiments, any suitable technical solution in the art can be adopted. For example, for the sealing of the base or processing equipment, in addition to the sealing submitted in the above embodiments, sealing can also be performed at other locations if necessary. For example, if the cooling water passage passes through the bellows, the cooling water passage and the bellows can be sealed. For the thermocouple shielding tube, it can also be sealed at the end away from the base body.

[0075] The above description is merely an exemplary embodiment of the present invention and is not intended to limit the scope of protection of the present invention, which is determined by the appended claims.

Claims

1. A base for supporting a workpiece being processed, wherein, The base body of the base includes a heater, an isolation layer and a radio frequency electrode stacked in sequence; the isolation layer is an insulating material to isolate the potential of the heater and the radio frequency electrode; The heater includes a heater body and a heating wire; the heating wire is disposed on the side of the heater body away from the isolation layer, or the heating wire is disposed inside the heater body; the heater body is grounded to shield the radio frequency interference of the radio frequency electrode; The base also includes an introduction line extending from the side of the heater away from the insulating layer into the interior of the base body; the introduction line includes a radio frequency introduction line. The radio frequency (RF) lead-in line includes an RF signal line for transmitting RF signals, and the heater is potential isolated from the RF signal line in the RF lead-in line. The RF lead-in line includes a central conductor located at the center of a coaxial line, a shielding layer surrounding the central conductor, and an insulating filler located between the central conductor and the shielding layer. The RF lead-in line extends into the base body from the side of the heater away from the isolation layer and passes through the heater and the isolation layer. The central conductor is electrically connected to the RF electrode to provide an RF power signal to the RF electrode. The shielding layer is grounded to shield the RF power signal. The shielding layer is sealed to the heater by welding or by a metal seal.

2. The base according to claim 1, wherein, A first gas channel is provided between the heater and the isolation layer, and the first gas channel is connected to a gas supply pipeline, which is used to introduce inert gas into the first gas channel; a second gas channel is provided between the isolation layer and the radio frequency electrode, and the isolation layer has a connecting channel that connects the first gas channel and the second gas channel.

3. The base according to claim 2, wherein, The heater has a plurality of first annular grooves evenly distributed in concentric circles on the surface opposite to the isolation layer, and a first radial groove connecting the plurality of first annular grooves to each other; the first annular grooves and the first radial grooves form the first gas channel.

4. The base according to claim 2, wherein, The radio frequency electrode has a plurality of second annular grooves arranged in concentric circles on the surface opposite to the isolation layer, and a second radial groove connecting the plurality of second annular grooves to each other; the second annular grooves and the second radial grooves form the second gas channel.

5. The base according to any one of claims 2 to 4, wherein, The contact surfaces between the heater, the insulating layer, and the radio frequency electrode are sealed together to seal the inert gas within the first gas channel and the second gas channel.

6. The base according to claim 1, wherein, The heater is provided with a third gas channel, which is connected to a gas supply pipeline, and the gas supply pipeline is used to introduce inert gas into the third gas channel; the radio frequency electrode is provided with a fourth gas channel, and the isolation layer is provided with a connecting channel, through which the third gas channel and the fourth gas channel are connected.

7. The base according to claim 1, wherein, The heater and the insulating layer, as well as the insulating layer and the radio frequency electrode, are connected by sintering or electroplating.

8. A semiconductor processing apparatus, comprising a chamber and a radio frequency source, wherein, A base according to any one of claims 1-7 is disposed in the chamber, and the radio frequency source is used to provide radio frequency power to the radio frequency electrodes in the base.

9. The semiconductor processing apparatus according to claim 8, wherein, The chamber is a physical vapor deposition chamber.

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