Equipment for manufacturing semiconductors

Abstract

A semiconductor manufacturing apparatus includes: a transfer head having a vacuum chuck configured to hold a light-emitting element chip under vacuum; and a vacuum pump configured to provide vacuum pressure to the transfer head, wherein the vacuum chuck includes a porous material layer and a buffer layer on the porous material layer, and the buffer layer includes a plurality of protrusions and vacuum holes extending from a surface of the buffer layer in contact with the porous material layer to a lower surface of the protrusions.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2017-0115133, entitled "Apparatus for Manufacturing Semiconductors," filed with the Korean Intellectual Property Office on September 8, 2017, the entire disclosure of which is incorporated herein by reference. Technical Field

[0003] The embodiments relate to an apparatus for manufacturing semiconductors. Background Technology

[0004] Light-emitting diode (LED) chips, due to their low power consumption and high brightness, can be used in various light sources, illumination, signal markers, and large displays. As image display devices, display devices using LED chip arrays, in which the LED chips are arranged in a two-dimensional (2D) array, have been used. This display device can be manufactured by encapsulating individual LED chips into LED packages, and then arranging the LED packages on a module substrate using a pick-and-place method. Recently, in order to achieve large-size and high-resolution display devices, the number of LED chips included in the display device has been increased. Summary of the Invention

[0005] Various embodiments are implemented by providing a semiconductor manufacturing apparatus, the semiconductor manufacturing apparatus comprising: a transfer head having a vacuum chuck configured to hold a light-emitting element chip under vacuum; and a vacuum pump configured to provide vacuum pressure to the transfer head, wherein the vacuum chuck includes a porous material layer and a buffer layer on the porous material layer, and the buffer layer includes a plurality of protrusions and vacuum holes extending from a surface of the buffer layer in contact with the porous material layer to a lower surface of the protrusions.

[0006] Various embodiments are implemented by providing a semiconductor manufacturing apparatus, which includes: a transfer head configured to transfer a selected first light-emitting element chip from a plurality of first light-emitting element chips arranged at a first spacing on a first substrate to a second substrate; and an adhesion force controller configured to reduce the adhesion force on the first substrate, wherein the adhesion force controller is configured to reduce the adhesion force on the first substrate in a region that vertically overlaps with the selected first light-emitting element chip, the transfer head is configured to transfer the selected first light-emitting element chip to the second substrate by holding the selected first light-emitting element chip, and the transfer head is configured to arrange the selected first light-emitting element chip on the second substrate at a second spacing larger than the first spacing.

[0007] Various embodiments are implemented by providing a semiconductor manufacturing apparatus, which includes: a first support chuck configured to support a first substrate having a first film, wherein a chip array is attached to the first film, the chip array including a plurality of light-emitting element chips; a second support chuck configured to support a second substrate having a second film, wherein the adhesion of the second film is greater than the adhesion of the first film, and the second support chuck is disposed on the first support chuck such that the second film faces the first film; and a chuck driver configured to move at least one of the first support chuck and the second support chuck such that the chip array on the first film is attached to the second film. Attached Figure Description

[0008] The features will be apparent to those skilled in the art from the detailed description of the exemplary embodiments with reference to the accompanying drawings, wherein:

[0009] Figure 1 A cross-sectional view of a semiconductor manufacturing apparatus according to some embodiments is shown;

[0010] Figures 2A to 2E It shows the use of Figure 1 Cross-sectional views of the various stages in the process of transferring light-emitting element chips in semiconductor manufacturing equipment;

[0011] Figures 3A to 3C Manufacturing process is shown Figure 1 Cross-sectional views of each stage in the method of vacuum chuck;

[0012] Figure 4A and Figure 4B A cross-sectional view of a semiconductor manufacturing apparatus according to some embodiments is shown;

[0013] Figure 5A and Figure 5B A cross-sectional view of a semiconductor manufacturing apparatus according to some embodiments is shown;

[0014] Figure 6A and Figure 6B A cross-sectional view of a semiconductor manufacturing apparatus according to some embodiments is shown;

[0015] Figure 7 A sequential flowchart of a method for rearranging light-emitting element chips according to some embodiments is shown;

[0016] Figures 8A to 8C It shows the relationship with Figure 7 A block diagram corresponding to the method of rearranging the light-emitting element chips;

[0017] Figure 9 A cross-sectional view of a semiconductor manufacturing apparatus according to some embodiments is shown;

[0018] Figures 10A to 10H It shows the use of Figure 9 Cross-sectional views of the various stages in the process of transferring light-emitting element chips in semiconductor manufacturing equipment;

[0019] Figure 11 A sequential flowchart of a method for rearranging light-emitting element chips according to some embodiments is shown;

[0020] Figures 12A to 12C It shows the relationship with Figure 11 A block diagram corresponding to the method of rearranging the light-emitting element chips;

[0021] Figure 13 A sequential flowchart illustrating a method for rearranging light-emitting element chips according to some embodiments of the present invention is shown;

[0022] Figure 14 It shows the relationship with Figure 13 A block diagram corresponding to the method for rearranging the light-emitting element chips; and

[0023] Figures 15A to 15F A sequential flowchart of a method for manufacturing a display device according to some embodiments is shown. Detailed Implementation

[0024] The embodiments are described in detail below with reference to the accompanying drawings.

[0025] Figure 1 A cross-sectional view of a semiconductor manufacturing apparatus 100 according to some embodiments is shown.

[0026] Reference Figure 1 The semiconductor manufacturing equipment 100 may include a transfer head 110 (for holding the light-emitting element chips 11) and a vacuum pump 140 (for providing vacuum pressure to the transfer head 110). The semiconductor manufacturing equipment 100 may be a transfer device for transferring a plurality of light-emitting element chips 11 on a first substrate 50 to a second substrate different from the first substrate 50, or for transferring a plurality of light-emitting element chips 11 from the first substrate 50 to a second substrate different from the first substrate 50.

[0027] The transfer head 110 can simultaneously vacuum hold (e.g., vacuum adsorption or vacuum clamping) multiple light-emitting element chips 11, and can simultaneously transfer light-emitting element chips 11 that have already been vacuum held. In an embodiment, the chip array 10 (which includes light-emitting element chips 11 arranged at a first pitch P1) can be attached to the first substrate 50. The transfer head 110 can selectively vacuum adsorb some light-emitting element chips 11 (e.g., selected light-emitting element chips) of the chip array 10 on the first substrate 50, and can transfer the (vacuum-held) light-emitting element chips 11 to a second substrate different from the first substrate 50. The transfer head 110 can arrange the (vacuum-held) light-emitting element chips 11 on the second substrate at a second pitch larger than the first pitch P1.

[0028] In one embodiment, the first substrate 50 may be a support film with a predetermined adhesiveness for fixing the light-emitting element chip 11. In another embodiment, the first substrate 50 may be a substrate on which the light-emitting element chip 11 is formed, such as a semiconductor substrate, a glass substrate, a sapphire substrate, or a plastic substrate.

[0029] The transfer head 110 may include a chuck frame 130 and a vacuum chuck 120 (received in the cavity of the chuck frame 130).

[0030] The internal pressure of the vacuum chuck 120 can be controlled by the vacuum pump 140. Therefore, the vacuum chuck 120 can vacuum hold the light-emitting element chip 11 by applying the vacuum pressure formed inside the vacuum chuck 120 to its lower surface. The vacuum chuck 120 may include a porous material layer 121 and a buffer layer 123 (disposed on the surface of the porous material layer 121).

[0031] The porous material layer 121 can be a portion of the vacuum pump 140 that generates or releases vacuum pressure. The porous material layer 121 can be disposed within the cavity of the chuck frame 130, and its upper and side surfaces can be covered by the chuck frame 130. In embodiments, the porous material layer 121 can comprise ceramic, alumina, mullite, or silicon carbide, or a combination of these materials.

[0032] In this embodiment, the pore size and pore density of the porous material layer 121 can be determined or selected so that an appropriate vacuum pressure can be applied to the light-emitting element chip 11. The pore size and pore density of the porous material layer 121 can be controlled or selected according to the size of the light-emitting element chip 11. Here, the pore size can refer to the average diameter of the pores.

[0033] In one embodiment, when the size of the light-emitting element chip 11 (e.g., the length of the long side of the light-emitting element chip 11) is in the range of 1 μm to 300 μm, the aperture can be in the range of about 0.1 μm to about 30 μm. In another embodiment, the aperture can be in the range of about 0.1 μm to about 20 μm.

[0034] In one embodiment, when the size of the light-emitting element chip 11 (e.g., the length of the long side of the light-emitting element chip 11) is in the range of 1 μm to 300 μm, a porous material layer 121 can be formed such that at least one pore is located in the range of about 1 μm to about 300 μm. In another embodiment, a porous material layer 121 can be formed such that at least one pore is located in the range of about 50 μm to about 200 μm.

[0035] A buffer layer 123 may be disposed on the lower surface of the porous material layer 121 and may be the portion of the conveyor head 110 that directly contacts the light-emitting element chip 11. The buffer layer 123 may comprise a material with predetermined elasticity that helps prevent damage to the light-emitting element chip 11 when the buffer layer 123 contacts the light-emitting element chip 11. In embodiments, the buffer layer 123 may comprise, for example, silicone resin, epoxy resin, polyimide resin, polyester resin, Teflon, polydimethylsiloxane (PDMS), or combinations of these materials.

[0036] The buffer layer 123 can be detachably attached to the porous material layer 121. In an embodiment, the buffer layer 123 can be replaceable, for example, it can be replaced with a new buffer layer after multiple transfer processes for the light-emitting element chip 11.

[0037] The buffer layer 123 may include a vacuum hole 127 to apply vacuum pressure (formed in the porous material layer 121) to the lower side. The vacuum hole 127 may extend from the upper surface of the buffer layer 123 (in contact with the porous material layer 121) to the lower surface of the buffer layer 123 (opposite to the upper surface of the buffer layer 123).

[0038] In one embodiment, the buffer layer 123 may include a plurality of protrusions 125 disposed on the lower surface of the buffer layer 123. The protrusions 125 may protrude from the lower surface (e.g., a plane) of the buffer layer 123 to a predetermined height or predetermined distance, for example, in the range of approximately 10 μm to approximately 100 μm. Vacuum holes 127 may be formed only in the portions corresponding to the protrusions 125 and may extend vertically through the protrusions 125. Vacuum holes 127 may extend from the upper surface of the buffer layer 123 to the lower surface of the protrusions 125. Vacuum pressure may be applied to the lower surface of the protrusions 125 through the vacuum holes 127, and the light-emitting element chip conveyed by the conveyor head 110 may be fixed to the lower surface of the protrusions 125.

[0039] The gap or distance between each protrusion 125 can be greater than the gap or distance between each light-emitting element chip 11 on the first substrate 50. For example, the protrusions 125 can be arranged to correspond to the light-emitting element chips 11 to be transferred in the chip array 10 on the first substrate 50. In an embodiment, for the chip array 10 on the first substrate 50, the protrusions 125 can be arranged with a second spacing P2, and the transfer head 110 can hold some chips or selected chips of the light-emitting element chips 11 arranged with the second spacing P2. Here, the second spacing P2 can be an integer multiple of the first spacing P1, for example, twice, ..., N times (N is a natural number).

[0040] Figures 2A to 2E It shows the use of Figure 1 Cross-sectional views of the various stages in the process of conveying the light-emitting element chip 11 in the semiconductor manufacturing equipment 100.

[0041] like Figure 2A As shown, the conveyor head 110 can be lowered so that the buffer layer 123 contacts the light-emitting element chip 11 on the first substrate 50. The protrusions 125 of the buffer layer 123 can contact some of the light-emitting element chips 11 on the first substrate 50 (e.g., selected light-emitting element chips 11). For example, the protrusions 125 of the buffer layer 123 can contact the first group of light-emitting element chips 11a arranged at a second spacing P2.

[0042] Referring to 2B, the transfer head 110 can vacuum-hold the first set of light-emitting element chips 11a by reducing the pressure within the vacuum chuck 120 using a vacuum pump 140. For example, a vacuum pressure can be created in the porous material layer 121 by the vacuum pump 140, and a vacuum pressure can be applied to the lower surface of the protrusion 125 through the vacuum holes 127 of the buffer layer 123. Therefore, the first set of light-emitting element chips 11a can be fixed to the lower surface of the protrusion 125 by the vacuum pressure applied to the lower surface of the protrusion 125.

[0043] Next, we can upgrade the transmission head 110. For example... Figure 2B As shown, the transmission head 110 can selectively pick up the first set of light-emitting element chips 11a corresponding to the protrusion 125.

[0044] Reference Figure 2C The transfer head 110 can move to the second substrate 70 while holding the first set of light-emitting element chips 11a. The transfer head 110 can be positioned on the second substrate 70 for vertical alignment with the second substrate 70. In an embodiment, alignment marks provided on the second substrate 70 can be used to align the transfer head 110 with the second substrate 70.

[0045] Reference Figure 2DThe first set of light-emitting element chips 11a can be brought into contact with the second substrate 70 by lowering the transmission head 110.

[0046] Reference Figure 2E The vacuum pressure of the vacuum chuck 120 can be released, allowing the first set of light-emitting element chips 11a to be positioned on the second substrate 70. The second substrate 70 can support the first set of light-emitting element chips 11a; for example, the second substrate 70 can have adhesive properties to hold the first set of light-emitting element chips 11a in place. The first set of light-emitting element chips 11a can be arranged on the second substrate 70 via the transfer head 110 to correspond to the protrusion 125. For example, the first set of light-emitting element chips 11a can be arranged on the second substrate 70 at a second spacing P2.

[0047] After the vacuum pressure of the transmission head 110 is released, the transmission head 110 can be lifted and separated from the first set of light-emitting element chips 11a.

[0048] The semiconductor manufacturing apparatus 100 according to the embodiment can simultaneously transport multiple light-emitting element chips 11, thus enabling the light-emitting element chips 11 to be rapidly transported to the target substrate. Furthermore, through selective transport of the light-emitting element chips 11, the chips 11 can be arranged on the target substrate, and the gap between each chip is increased.

[0049] Figures 3A to 3C Manufacturing process is shown Figure 1 Cross-sectional views of each stage in the method of vacuum chuck 120.

[0050] Reference Figure 3A After preparing the porous material layer 121, a buffer layer 123a can be formed on the porous material layer 121. In one embodiment, the buffer layer 123a can be formed by coating the porous material layer 121 with a polymer material. The buffer layer 123a can be formed to cover the surface of the porous material layer 121.

[0051] Reference Figure 3B Protrusions 125 can be formed on the buffer layer 123a. The protrusions 125 can be arranged in a two-dimensional array. In one embodiment, the protrusions 125 can be formed relative to the buffer layer 123a by an imprinting process. In another embodiment, the protrusions 125 can be formed by an etching process that removes a portion of the upper part of the buffer layer 123a.

[0052] Reference Figure 3C A vacuum hole 127 can be formed that vertically penetrates the buffer layer 123a. The vacuum hole 127 can extend from the surface of the protrusion 125 to the surface of the buffer layer 123a that contacts the porous material layer 121. In an embodiment, the vacuum hole 127 can be formed by using laser drilling or etching.

[0053] In one embodiment, the protrusion 125 and the vacuum hole 127 can be formed simultaneously using an imprinting process. In this case, a laser drilling process can be further performed to fully expose the porous material layer 121 through the vacuum hole 127.

[0054] In an embodiment, in order to form a buffer layer 123a including protrusions 125 and vacuum holes 127 on the porous material layer 121, a printing process can be performed using a printer such as a 3D printer, an inkjet printer, or a screen printer.

[0055] Figure 4A and Figure 4B A cross-sectional view of a semiconductor manufacturing apparatus 100a according to some embodiments is shown.

[0056] Figure 4A and Figure 4B In addition to potentially including an adhesion force controller 150 and a conveyor head 110a, the semiconductor manufacturing apparatus 100a described may have the same configuration as... Figure 1 The structure is basically the same as that of semiconductor manufacturing equipment 100, therefore references will be omitted or briefly provided. Figure 1 Repeated descriptions of the provided components.

[0057] Reference Figure 4A and Figure 4B The semiconductor manufacturing equipment 100a may include a transfer head 110a for transferring the light-emitting element chip 11 and an adhesion force controller 150 for partially reducing the adhesion force of the first substrate 50.

[0058] The transfer head 110a can simultaneously hold multiple light-emitting element chips 11 and simultaneously transfer the light-emitting element chips 11. For example, the transfer head 110a can selectively hold some of the light-emitting element chips 11 (arranged on the first substrate 50 at a first pitch P1) of the chip array 10, and can arrange the light-emitting element chips 11 held by the transfer head 110a at a second pitch P2 greater than the first pitch P1 on a second substrate different from the first substrate 50.

[0059] In one embodiment, the transmission head 110a can fix the light-emitting element chip 11 by using a vacuum holding method, and can have space for forming vacuum pressure.

[0060] In this implementation, the transmission head 110a can be connected to... Figure 1 The same as the transmission head 110.

[0061] The adhesion controller 150 may include a first laser irradiator 151 for partially reducing or removing the adhesion of the first substrate 50 by irradiating it with a laser, such as a UV laser. The first laser irradiator 151 may partially reduce the adhesion of a portion of the first substrate 50 by irradiating it with a laser, thereby physically and / or chemically altering that portion of the first substrate 50.

[0062] For example, before the transfer head 110a holds the first group of light-emitting element chips 11a, the first laser irradiator 151 can partially reduce the adhesion force of the portion of the first substrate 50 that vertically overlaps with the first group of light-emitting element chips 11a by irradiating it with a laser. When the adhesion force of this portion of the first substrate 50 is reduced, the transfer head 110a can hold the first group of light-emitting element chips 11a under vacuum. Then, the transfer head 110a can be raised to lift the first group of light-emitting element chips 11a. The adhesion force to this portion of the first substrate 50 can be reduced by the first laser irradiator 151, and the first group of light-emitting element chips 11a can be easily separated from the first substrate 50. Therefore, the transfer head 110a can easily hold the first group of light-emitting element chips 11a.

[0063] Figure 5A and Figure 5B A cross-sectional view of a semiconductor manufacturing apparatus 100b according to some embodiments is shown.

[0064] In addition to the construction of the transmission head 110b, Figure 5A and Figure 5B The described semiconductor manufacturing equipment 100b can have the same characteristics as... Figure 4A and Figure 4B The structure is basically the same as that of the semiconductor manufacturing equipment 100a, therefore references will be omitted or briefly provided. Figure 4A and Figure 4B Repeated descriptions of the provided components.

[0065] Reference Figure 5A and Figure 5B The semiconductor manufacturing apparatus 100b may include a transfer head 110b for transferring the light-emitting element chip 11 and an adhesion force controller 150 for partially reducing the adhesion force of the first substrate 50. The transfer head 110b may be configured to apply a force for uniformly fixing the light-emitting element chip 11 to its entire lower surface.

[0066] The delivery head 110b may include a support layer 129 having a predetermined adhesion force, and the support layer 129 may be disposed below the delivery head 110b to hold the light-emitting element chip 11. In an embodiment, the support layer 129 may include polydimethylsiloxane (PDMS).

[0067] The selective transfer of the light-emitting element chip 11 via the transfer head 110b can be achieved through the difference between the adhesive force of the support layer 129 and the adhesive force formed by the first substrate 50. For example, when the support layer 129 of the transfer head 110b has a first adhesive force for holding the light-emitting element chip 11, the adhesive force controller 150 controls the adhesive force of a portion of the first substrate 50 to be less than the first adhesive force. This portion is the area that vertically overlaps with the first group of light-emitting element chips 11a, so that the first group of light-emitting element chips 11a can be attached to the transfer head 110b. In this case, the first adhesive force of the transfer head 110b is less than the adhesive force required for the light-emitting element chips 11 other than the first group of light-emitting element chips 11a to attach to the first substrate 50. Therefore, the other light-emitting element chips 11 are fixed (e.g., may be retained) on the first substrate 50 and are not held or lifted by the transfer head 110b.

[0068] Figure 6A and Figure 6B A cross-sectional view of a semiconductor manufacturing apparatus 100c according to some embodiments is shown.

[0069] In addition to the construction of the adhesion force controller 150a, Figure 6A and Figure 6B The semiconductor manufacturing equipment 100a described can have the same Figure 4A and Figure 4B The semiconductor manufacturing equipment has a basically the same structure, so references will be omitted or briefly provided. Figure 4A and Figure 4B Repeated descriptions of the provided components.

[0070] Reference Figure 6A and Figure 6B The semiconductor manufacturing apparatus 100c may include a conveyor head 110a for conveying light-emitting element chips 11 and an adhesion force controller 150a for partially reducing the adhesion force of a first substrate 50. The adhesion force controller 150a may include an ejector 153 that deforms a portion of the first substrate 50 by applying pressure to that portion, wherein the portion of the first substrate 50 is the area of ​​the first substrate 50 that vertically overlaps with the first set of light-emitting element chips 11a conveyed by the conveyor head 110a.

[0071] The ejector 153 may be disposed below the first substrate 50 and may include an ejector pin 155 configured to move vertically. The ejector pin 155 may physically deform a predetermined area of ​​the first substrate 50 and may reduce the adhesion of the predetermined area by contacting and applying pressure to the predetermined area of ​​the first substrate 50.

[0072] Before holding the light-emitting element chips 11a by the conveyor head 110a, the ejector 153 can be configured to partially reduce the adhesive force of a portion of the first substrate 50 by applying pressure to that portion using the ejector pin 155, wherein that portion of the first substrate 50 is the area of ​​the first substrate 50 that vertically overlaps with the first group of light-emitting element chips 11a to be conveyed by the conveyor head 110a. For example, when the ejector pin 155 applies pressure to the underside of that portion of the first substrate 50, the edge portion of the lower surface of the first group of light-emitting element chips 11a can separate from the first substrate 50, thus reducing the adhesive force of the first substrate 50 in holding the first group of light-emitting element chips 11a. When the adhesive force of that portion of the first substrate 50 is reduced by the ejector 153, the conveyor head 110a can easily hold the first group of light-emitting element chips 11a.

[0073] Figure 7 A sequential flowchart of a method for rearranging light-emitting element chips according to some embodiments is shown. Figures 8A to 8C It shows the relationship with Figure 7 The block diagram corresponding to the method of rearranging the light-emitting element chips.

[0074] Reference Figure 7 and Figure 8A A first support film 50a can be prepared on which the first light-emitting element chip 21 is disposed at a first spacing P1 (S111). The first light-emitting element chip 21 can be arranged in a two-dimensional (2D) array on the first support film 50a with the first spacing P1 in a first direction. In an embodiment, the first support film 50a can have a predetermined adhesive force for holding the first light-emitting element chip 21.

[0075] It can be transmitted via a header (e.g., Figure 1 The transfer head 110 selectively holds or lifts some of the first light-emitting element chips 21 and transfers the first light-emitting element chips 21 held by the transfer head to the receiving substrate 70 (S 113). For the first light-emitting element chips 21 on the first support film 50a, the transfer head can hold some of the first light-emitting element chips 21 arranged at a second spacing P2 (greater than the first spacing P1). The selected first light-emitting element chips 21 held by the transfer head can be arranged in a 2D array on the surface of the transfer head. The selected first light-emitting element chips 21 transferred to the receiving substrate 70 can be arranged in a 2D array in the first direction at the second spacing P2.

[0076] In the implementation method, such as Figure 8AAs shown, the transfer head can hold adjacent first light-emitting element chips 21 in a second direction (perpendicular to the first direction) and can transfer them to the receiving substrate 70. In this case, compared with the arrangement of the first light-emitting element chips 21 on the first support film 50a, the gap between the first light-emitting element chips 21 in the second direction can be equal in the arrangement of the first light-emitting element chips 21 on the receiving substrate 70.

[0077] In the implementation method, with Figure 8A Unlike the arrangement described herein, the transfer head can selectively hold the first light-emitting element chips 21 such that the gap between each first light-emitting element chip 21 is larger than the gap between adjacent first light-emitting element chips 21 in the second direction, and can transfer them to the receiving substrate 70. In this case, compared to the arrangement of the first light-emitting element chips 21 on the first support film 50a, the arrangement of the first light-emitting element chips 21 on the receiving substrate 70 can have an increased gap in the second direction.

[0078] Reference Figure 7 and Figure 8B After the first light-emitting element chip 21 is arranged on the receiving substrate 70, a second support film 50b can be prepared on which the second light-emitting element chip 23 is arranged at a first spacing P1 (S121). Next, the transfer head selectively holds or lifts some of the second light-emitting element chips 23 (e.g., selected second light-emitting element chips 23) and transfers the selected second light-emitting element chips 23 to the receiving substrate 70 on which the light-emitting element chips 21 have been arranged (S123). On the receiving substrate 70, the second light-emitting element chips 23 can be arranged in a 2D array in a first direction at a second spacing P2. Moreover, on the receiving substrate 70, each second light-emitting element chip 23 can be spaced apart from the first light-emitting element chip 21 by a predetermined distance in the first direction.

[0079] Reference Figure 7 and Figure 8C After the second light-emitting element chip 23 is arranged on the receiving substrate 70, a third support film 50c on which the third light-emitting element chip 25 is arranged can be fabricated (S131). Next, the transfer head selectively holds or lifts some of the third light-emitting element chips 25 (e.g., selected third light-emitting element chips 25) and transfers the selected third light-emitting element chips 25 to the receiving substrate 70 on which the first light-emitting element chip 21 and the second light-emitting element chip 23 are arranged (S133). On the receiving substrate 70, the third light-emitting element chips 25 can be arranged in a 2D array in a first direction with a second spacing P2. Moreover, on the receiving substrate 70, each third light-emitting element chip 25 can be spaced apart from the second light-emitting chip 23 by a predetermined distance in the first direction.

[0080] The first light-emitting element chip 21, the second light-emitting element chip 23, and the third light-emitting element chip 25 can be arranged on the receiving substrate 70. Adjacent first light-emitting element chips 21, 23, and 25 in a first direction can form a package in subsequent processing and can also constitute a pixel. In an embodiment, the first light-emitting element chip 21, 23, and 25 can be light-emitting element chips for emitting red, green, and blue light, respectively. In an embodiment, the type and number of light-emitting element chips constituting a single package can be selected as needed.

[0081] By using the above Figure 1 and Figures 4A to 6B The semiconductor manufacturing apparatuses 100, 100a, 100b, and 100c described herein perform each of operations S113, S123, and S133, and can be used in conjunction with the above-mentioned references. Figures 2A to 2E These operations are performed in essentially the same way as described.

[0082] Figure 9 A cross-sectional view of a semiconductor manufacturing apparatus 200 according to some embodiments is shown.

[0083] Reference Figure 9 The semiconductor manufacturing apparatus 200 may include a first support chuck 210, a second support chuck 220, a chuck driver 230, and a vision unit or vision sensor 240. The semiconductor manufacturing apparatus 200 may be a transfer device for transferring a plurality of light-emitting element chips 11 on a first substrate 60 to a second substrate 70 or for transferring a plurality of light-emitting element chips 11 from the first substrate 60 to the second substrate 70. In an embodiment, the semiconductor manufacturing apparatus 200 may transfer a chip array 10 on the first substrate 60, including light-emitting element chips 11 arranged at a predetermined spacing, to the second substrate 70. The light-emitting element chips 11 transferred by the semiconductor manufacturing apparatus 200 may be arranged on the second substrate 70 at a predetermined spacing.

[0084] The first support chuck 210 can support the first substrate 60. The first support chuck 210 may include at least one of the following: a vacuum chuck for supporting the first substrate 60 by using vacuum pressure, an electrostatic chuck for supporting the first substrate 60 by using electrostatic force, and a mechanical chuck for supporting the first substrate 60 by using a mechanical clamping method.

[0085] The first substrate 60 can hold the chip array 10 to be transported by the transport device and can be arranged on the surface of the first support chuck 210. The first substrate 60 may include a first film 61 with a predetermined adhesive force for holding the light-emitting element chip 11 and a first film frame 63 arranged on the edge of the first film 61 to support the first film 61. The first film frame 63 may have, for example, a rectangular frame shape.

[0086] The first substrate 60 may include a first alignment mark 65 for aligning the first support chuck 210 and the second support chuck 220. The first alignment mark 65 can be formed using, for example, a printing method or a laser marking method. In one embodiment, the first alignment mark 65 may be disposed on the first film frame 63. In another embodiment, unlike… Figure 9 The first alignment mark 65 shown can be arranged on the first membrane 61.

[0087] The second support chuck 220 can support the second substrate 70 and can be arranged on top of the first support chuck 210 such that the first substrate 60 faces the second substrate 70. The second support chuck 220 may include one of a vacuum chuck, an electrostatic chuck, and a mechanical chuck.

[0088] The second substrate 70 can hold the chip array 10 transferred from the first substrate 60 and can be arranged on the surface of the second support chuck 220. The second substrate 70 may include a second film 71 with a predetermined adhesive force for holding the light-emitting element chip 11 and a second film frame 73 arranged on the edge of the second film 71 to support the second film 71. The second film frame 73 may have a shape corresponding to the shape of the first film frame 63, for example, a rectangular frame shape.

[0089] The second substrate 70 may include a second alignment mark 75 for aligning the first support chuck 210 and the second support chuck 220. In one embodiment, the second alignment mark 75 may be disposed on the second membrane frame 73. In another embodiment, with Figure 9 The second alignment mark 75 is different from that described in the previous section. The second alignment mark 75 can be arranged on the second membrane 71.

[0090] The chuck driver 230 can drive the first support chuck 210 and the second support chuck 220. The chuck driver 230 may include a drive mechanism for driving the first support chuck 210 and the second support chuck 220. For example, the drive mechanism may include an actuator.

[0091] In one embodiment, the chuck driver 230 may vertically arrange the first support chuck 210 and the second support chuck 220. For example, the vision sensor 240 may identify the first alignment mark 65 and the second alignment mark 75, and the chuck driver 230 may align the first support chuck 210 and the second support chuck 220 based on the information identified by the vision sensor 240.

[0092] Furthermore, the chuck driver 230 can move at least one of the first support chuck 210 and the second support chuck 220, such that the chip array 10 on the first film 61 is attached to the second film 71. For example, the chuck driver 230 can lift the first support chuck 210, such that the chip array 10 on the first film 61 is attached to the second film 71. In an embodiment, the adhesion force of the second film 71 can be greater than that of the first film 61; therefore, the light-emitting element chip 11 can be transferred from the first film 61, which has a relatively small adhesion force, to the second film 71, which has a relatively large adhesion force.

[0093] Figures 10A to 10H It shows the use of Figure 9 Cross-sectional views of the semiconductor manufacturing equipment 200 during the transfer process of the light-emitting element chip 11.

[0094] Reference Figure 10A The chip array 10 can be arranged on the first film 61 of the first substrate 60. The light-emitting element chips 11 of the chip array 10 can be arranged on the first film 61 at a third spacing P3. Moreover, the light-emitting element chip 11 that is closest to the edge of the first film 61 can be spaced apart from the first alignment mark 65 by a first distance D1.

[0095] Reference Figure 10B The laser can irradiate the first film 61 from the second laser irradiator 250, thereby reducing the adhesion of the first film 61. The second laser irradiator 250 can reduce the adhesion between the first film 61 and the light-emitting element chip 11, making the adhesion between the first film 61 and the light-emitting element chip 11 lower than that between the second film (reference). Figure 10D The adhesion between the first film 61 and the light-emitting element chip 11. In an embodiment, if the adhesion between the first film 61 and the light-emitting element chip 11 is sufficiently lower than the adhesion between the second film 71 and the light-emitting element chip 11, the operation of reducing the adhesion between the first film 61 and the light-emitting element chip 11 by using the second laser irradiator 250 can be omitted. Figure 10BThe document describes a plurality of second laser irradiators 250. In one embodiment, the adhesion between the first film 61 and the light-emitting element chip 11 can be reduced by moving one of the second laser irradiators 250. In another embodiment, the second laser irradiator 250 can irradiate laser light from below the first film 61 or from above the first film 61.

[0096] Reference Figure 10C The first substrate 60 can be disposed on the first support chuck 210. The first support chuck 210 can support the first substrate 60 placed on its surface. For example, the first support chuck 210 can support the first substrate 60 by vacuum holding the first film 61.

[0097] Reference Figure 10D A second support chuck 220 supporting the second substrate 70 can be prepared, and the second support chuck 220 can be arranged on the first support chuck 210, such that the second film 71 of the second substrate 70 faces the first film 61.

[0098] Next, the first support chuck 210 and the second support chuck 220 can be aligned. For example, the first film frame 63 of the first substrate 60 can be vertically aligned with the second film frame 73 of the second substrate 70. In an embodiment, to align the first support chuck 210 and the second support chuck 220, the vision sensor 240 can identify the first alignment mark 65 of the first substrate 60 and the second alignment mark 75 of the second substrate 70, respectively. Based on the information identified by the vision sensor 240, the chuck driver 230 can move at least one of the first support chuck 210 and the second support chuck 220 so that the first support chuck 210 and the second support chuck 220 are vertically aligned.

[0099] Reference Figure 10E The chuck driver 230 can vertically move at least one of the first support chuck 210 and the second support chuck 220, so that the first membrane frame 63 of the first substrate 60 and the second membrane frame 73 of the second substrate 70 come into contact with each other.

[0100] Reference Figure 10F The chuck driver 230 can drive the first support chuck 210 and the second support chuck 220, causing the chip array 10 on the first membrane 61 to contact the second membrane 71. For example, the first support chuck 210 may include a central portion 211 where the light-emitting element chip 11 is located and a peripheral portion 213 where the first membrane frame 63 is located. The central portion 211 may be configured to be movable by the chuck driver 230. In this case, with the peripheral portion 213 fixed in a predetermined position, the chuck driver 230 can attach the light-emitting element chip 11 to the second membrane 71 by lifting the central portion 211 of the first support chuck 210.

[0101] Reference Figure 10G The chuck driver 230 can separate the light-emitting element chip 11 from the first substrate 60 by lifting the second support chuck 220. The light-emitting element chip 11 can be attached to the second film 71, which has a stronger adhesion than the first film 61, and the light-emitting element chip 11 can be separated from the first substrate 60 and can be lifted together with the second substrate 70.

[0102] Reference Figure 10H The second substrate 70 can be separated from the second support chuck 220. The light-emitting element chips 11 transferred to the second substrate 70 can be arranged at a third pitch P3. Furthermore, with... Figure 10A Similar to the light-emitting element chip 11 on the first substrate 60 described herein, the light-emitting element chip 11 closest to the edge of the second film 71 can be arranged at a first distance D1 and a second alignment mark 75 spaced apart.

[0103] In the semiconductor manufacturing apparatus 200 according to this embodiment, multiple light-emitting element chips 11 can be transported simultaneously, thus allowing the light-emitting element chips 11 to be quickly arranged on the target substrate. Furthermore, when using the second support chuck 220 according to this embodiment, the light-emitting element chips 11 can be transported by aligning and contacting the substrate to be transported with the transport substrate, without performing a pick-and-place process. Therefore, the reproducibility of the tiny light-emitting element chips 11 can be increased.

[0104] Figure 11 A sequential flowchart of a method for rearranging light-emitting element chips according to some embodiments is shown. Figures 12A to 12C It shows the relationship with Figure 11 The block diagram corresponding to the method of rearranging the light-emitting element chips.

[0105] Reference Figure 11 and Figure 12A A first intermediate substrate 60a can be fabricated by arranging multiple first light-emitting element chips 21 on it at a third spacing P3 (S211). The first light-emitting element chips 21 can be arranged in a 2D array on the first intermediate substrate 60a and can be arranged in a first direction at a third spacing P3. Moreover, the first light-emitting element chips 21 closest to the edge of the first intermediate substrate 60a can be arranged at a first distance D1 from the edge of the first intermediate substrate 60a.

[0106] Next, the first light-emitting element chip 21 on the first intermediate substrate 60a can be transferred to the receiving substrate 70 (S213). The arrangement of the first light-emitting element chip 21 transferred to the receiving substrate 70 can be the same as the arrangement of the first light-emitting element chip 21 on the first intermediate substrate 60a. For example, the first light-emitting element chip 21 can be arranged in a 2D array and can be arranged in the first direction with a third spacing P3. Moreover, the first light-emitting element chip 21 closest to the edge of the receiving substrate 70 can be arranged at a first distance D1 spaced apart from the edge of the receiving substrate 70.

[0107] Reference Figure 11 and Figure 12B After the first light-emitting element chip 21 is arranged on the receiving substrate 70, a second intermediate substrate 60b can be fabricated on which a second light-emitting element chip 23 is arranged at a third spacing P3 (S221). On the second intermediate substrate 60b, the second light-emitting element chip 23 closest to the edge of the second intermediate substrate 60b can be arranged at a second distance D2 spaced apart from the edge of the second intermediate substrate 60b. In an embodiment, the second distance D2 can be greater than the first distance D1, and can be equal to the sum of the first distance D1 and the chip spacing A.

[0108] Next, the second light-emitting element chip 23 on the second intermediate substrate 60b is transferred to the receiving substrate 70 on which the first light-emitting element chip 21 is disposed, such that each second light-emitting element chip 23 is located next to each first light-emitting element chip 21 (S223). On the receiving substrate 70, the second light-emitting element chips 23 can be arranged in a 2D array and can be arranged with a third spacing P3 about a first direction. Moreover, on the receiving substrate 70, each second light-emitting element chip 23 can be spaced apart from each first light-emitting element chip 21 by an inter-chip spacing A in the first direction.

[0109] Reference Figure 11 and Figure 12C After the second light-emitting element chip 23 is arranged on the receiving substrate 70, a third intermediate substrate 60c can be fabricated on which a third light-emitting element chip 25 is arranged at a third spacing P3 (S231). On the third intermediate substrate 60c, the third light-emitting element chip 25 closest to the edge of the third intermediate substrate 60c can be spaced apart from the edge of the third intermediate substrate 60c by a third distance D3. In an embodiment, the third distance D3 can be greater than the second distance D2, and can be equal to the sum of the second distance D2 and the chip spacing A.

[0110] Next, the third light-emitting element chip 25 on the third intermediate substrate 60c can be transferred to the receiving substrate 70 on which the first light-emitting element chip 21 and the second light-emitting element chip 23 are disposed, such that each third light-emitting element chip 25 is located next to each second light-emitting element chip 23 (S233). On the receiving substrate 70, the third light-emitting element chips 25 can be arranged in a 2D array and can be arranged with a third spacing P3 about the first direction. Moreover, on the receiving substrate 70, each third light-emitting element chip 25 can be spaced from the second light-emitting element chip 23 in the first direction by a distance equal to the inter-chip spacing A. A first light-emitting element chip 21, a second light-emitting chip 23, and a third light-emitting chip 25 adjacent in the first direction can form a single package in subsequent processing and can be used to construct a single pixel.

[0111] By using Figure 9 The semiconductor manufacturing apparatus 200 described herein performs each of operations S213, S223, and S233. It can be substantially similar to that described in reference [reference]. Figures 10A to 10H The transmission method described herein performs each operation.

[0112] Figure 13 A sequential flowchart of a method for rearranging light-emitting element chips according to some embodiments is shown. Figure 14 It shows the relationship with Figure 13 The block diagram corresponding to the method of rearranging the light-emitting element chips.

[0113] Reference Figure 13 and Figure 14 It can perform transmission processing regarding the first light-emitting element chip 21, the second light-emitting element chip 23, and the third light-emitting element chip 25 (S310).

[0114] For example, a first support film 50a can be prepared on which a first light-emitting element chip 21 is disposed at a first pitch P1. Then, the first light-emitting element chip 21 can be transferred from the first support film 50a to a first intermediate substrate 60a (S311). The first light-emitting element chip 21 can be transferred from the first support film 50a to the first intermediate substrate 60a such that the distance between each chip is increased. For example, the first light-emitting element chip 21 can be disposed on the first intermediate substrate 60a at a second pitch P2 larger than the first pitch P1. Then, similar to the method of transferring the first light-emitting element chip 21, the second light-emitting element chip 23 can be transferred from the second support film 50b to the second intermediate substrate 60b (S313), and the third light-emitting element chip 25 can be transferred from the third support film 50c to the third intermediate substrate 60c (S315). The transfer of the first light-emitting element chip 21, the second light-emitting chip 23, and the third light-emitting chip 25 can be performed using semiconductor manufacturing equipment 100, 100a, 100b, and 100c, and can be substantially similar to the reference. Figures 2A to 2E The described transmission method performs the transmission.

[0115] Next, the transfer process for the first light-emitting element chip 21, the second light-emitting element chip 23, and the third light-emitting element chip 25 can be executed (S320). The transfer process for the first light-emitting element chip 21 (S321), the transfer process for the second light-emitting element chip 23 (S323), and the transfer process for the third light-emitting element chip 25 (S325) can be executed sequentially. This can be done according to reference... Figure 11 and Figures 12A to 12C The transfer processing for the first light-emitting element chip 21 (S321), the transfer processing for the second light-emitting element chip 23 (S323), and the transfer processing for the third light-emitting element chip 25 (S325) are performed in essentially the same manner as described.

[0116] Figures 15A to 15F Cross-sectional views of various stages in a method of manufacturing a display device 300 according to some embodiments are shown.

[0117] Reference Figure 15A A receiving substrate 70 on which a first light-emitting element chip 21, a second light-emitting element chip 23, and a third light-emitting element chip 25 are disposed can be fabricated. The first light-emitting element chip 21, the second light-emitting element chip 23, and the third light-emitting element chip 25 can be light-emitting element chips for emitting red light, green light, and blue light, respectively. A first light-emitting element chip, a second light-emitting element chip, and a third light-emitting element chip adjacent to each other can constitute a single pixel.

[0118] Reference Figure 15BA molding layer 311 covering the first light-emitting element chip 21, the second light-emitting element chip 23, and the third light-emitting element chip 25 can be formed on the surface of the receiving substrate 70.

[0119] Reference Figure 15C After molding, the structure 310, including the first light-emitting element chip to the third light-emitting element chips 21, 23 and 25 and the molding layer 311, can be separated from the receiving substrate 70. After separation, the structure 310 can be placed on the carrier substrate 315, and the lower surfaces of the first light-emitting element chip to the third light-emitting element chips 21, 23 and 25 can be exposed to the outside.

[0120] Reference Figure 15D A wiring structure 320 can be formed on the surface where the lower surfaces of the first to third light-emitting element chips 21, 23, and 25 of the structure 310 are located. The wiring structure 320 may include an insulating layer 321 and conductive patterns 323 in the insulating layer 321. The conductive patterns 323 may be electrically connected to the first to third light-emitting element chips 21, 23, and 25.

[0121] Reference Figure 15E Connection terminals 350 connected to conductive patterns 323 can be formed on the surface of wiring structure 320. Connection terminals 350 can be, for example, bumps or solder balls. After forming connection terminals 350, wiring structure 320 and structure 310 can be separated or cut into individual light-emitting packages using a blade BL. Light-emitting package 340 may include first light-emitting element chips 21 to 23 and 25.

[0122] Reference Figure 15F After manufacturing the light-emitting package 340, the display device 300 can be manufactured by mounting the light-emitting package 340 onto the module substrate 370. The display device 300 may include a driving component 360 mounted on the module substrate 370 for applying power and signals to the light-emitting package 340. The light-emitting package 340 and the driving component 360 may be electrically connected to the wiring layer 371 via connection terminals 350, respectively.

[0123] Various embodiments can provide a method for more accurately and quickly arranging multiple light-emitting element chips on a module substrate.

[0124] Various embodiments may provide a semiconductor manufacturing apparatus configured to arrange light-emitting element chips on a target substrate.

[0125] This document has disclosed exemplary embodiments, and although specific terminology has been used, these exemplary embodiments are used and interpreted in a general and descriptive sense only and not for limiting purposes. In some instances, it will be apparent to those skilled in the art at the time of filing this application that, unless specifically indicated otherwise, features, characteristics, and / or elements described in connection with particular embodiments may be used alone or in combination with features, characteristics, and / or elements described in connection with other embodiments. Therefore, those skilled in the art will understand that various changes in form and detail may be made without departing from the spirit and scope of the invention as set forth in the appended claims.

Claims

1. A semiconductor manufacturing apparatus, comprising: The transfer head includes a vacuum chuck configured to hold a light-emitting element chip in a vacuum, and the transfer head is configured to transfer a plurality of light-emitting element chips arranged at a first spacing on a support film to an intermediate substrate by holding the light-emitting element chip in a vacuum. A vacuum pump configured to provide vacuum pressure to the conveyor head; as well as A transmission device configured to transmit the light-emitting element chip on the intermediate substrate to a receiving substrate. in: The vacuum chuck includes a porous material layer and a buffer layer on the lower surface of the porous material layer. The lower surface of the buffer layer has a plurality of protrusions, each of which has a vacuum hole formed therein. The vacuum hole extends from the upper surface of the buffer layer in contact with the porous material layer to the lower surface of the protrusion, but does not extend into the porous material layer. The vacuum pressure is configured to be formed by the vacuum pump in a porous material layer without vacuum pores, and the vacuum pressure is configured to be applied toward the lower surface of the plurality of protrusions via the vacuum pores in the buffer layer. The buffer layer is disposed between the porous material layer and the plurality of protrusions. The plurality of protrusions are arranged at a second spacing greater than the first spacing, and The transmission device includes: The first support chuck is configured to support the intermediate substrate. A second support chuck is configured to support the receiving substrate, and the second support chuck is disposed on top of the first support chuck such that the receiving substrate faces the intermediate substrate; and A chuck driver is configured to move at least one of the first support chuck and the second support chuck such that a light-emitting element chip on the intermediate substrate is attached to the receiving substrate.

2. The semiconductor manufacturing equipment according to claim 1, wherein, The porous material layer includes pores with a diameter ranging from 0.1 μm to 20 μm.

3. The semiconductor manufacturing equipment according to claim 1, wherein, The transfer head also includes a chuck frame that covers the side surface of the porous material layer and one surface of the porous material layer, the one surface being opposite to the surface of the porous material layer that contacts the buffer layer.

4. The semiconductor manufacturing equipment according to claim 1, wherein, The transmission head is configured to arrange vacuum-held light-emitting element chips on the intermediate substrate at the second spacing.

5. The semiconductor manufacturing equipment according to claim 4, further comprising: A first laser irradiator is configured to partially reduce the adhesion of the support film by irradiating a laser, wherein the first laser irradiator is configured to irradiate a portion of the support film with a laser, the portion being an area that vertically overlaps with a first group of light-emitting element chips arranged at the second spacing among the plurality of light-emitting element chips.

6. The semiconductor manufacturing equipment according to claim 4, further comprising: An ejector is configured to partially reduce the adhesive force of the support film by pressing it, wherein the ejector is configured to deform by pressing a portion of the support film, the portion being an area that vertically overlaps with a first group of light-emitting element chips arranged at the second spacing among the plurality of light-emitting element chips.

7. The semiconductor manufacturing equipment according to claim 1, wherein: The intermediate substrate includes a first film, and The receiving substrate includes a second film, the adhesive force of which is greater than that of the first film.

8. The semiconductor manufacturing equipment according to claim 1, wherein, The transmission device further includes a second laser irradiator configured to irradiate the intermediate substrate with a laser, thereby reducing the adhesion of the intermediate substrate.

9. The semiconductor manufacturing equipment according to claim 1, wherein: The intermediate substrate includes a first alignment mark. The receiving substrate includes a second alignment mark. The transmission device further includes a vision sensor configured to identify the first alignment mark and the second alignment mark, and The chuck driver aligns the first support chuck and the second support chuck based on the information identified by the vision sensor.

10. A semiconductor manufacturing apparatus, comprising: The conveyor head is configured to convey the selected first light-emitting element chip to an intermediate substrate by holding a selected first light-emitting element chip among a plurality of first light-emitting element chips arranged at a first spacing on a first substrate, and to arrange the selected first light-emitting element chip on the intermediate substrate at a second spacing larger than the first spacing. An adhesion force controller that reduces the adhesion force of the first substrate; as well as A transmission device configured to transfer the selected first light-emitting element chip on the intermediate substrate to a second substrate. The adhesion force controller is configured to reduce the adhesion force of the first substrate in the area where it vertically overlaps with the selected first light-emitting element chip. The transfer head includes a vacuum chuck configured to vacuum-hold a light-emitting element chip. The vacuum chuck includes a porous material layer under applied vacuum pressure and a buffer layer on the lower surface of the porous material layer. A plurality of protrusions are arranged at a second spacing on the lower surface of the buffer layer. Each of the plurality of protrusions forms a vacuum hole extending from the upper surface of the buffer layer in contact with the porous material layer to the lower surface of the protrusion, but not extending into the porous material layer. The vacuum pressure is determined based on the average diameter and pore density of the pores in the porous material layer. The vacuum pressure is configured to be formed by a vacuum pump in the porous material layer without vacuum holes, and the vacuum pressure is configured to be applied towards the lower surface of the protrusions via the vacuum holes in the buffer layer. The buffer layer is disposed between the porous material layer and the plurality of protrusions. The transmission device includes: The first support chuck is configured to support the intermediate substrate. A second support chuck is configured to support the second substrate and is disposed on top of the first support chuck, such that the second substrate faces the intermediate substrate; and A chuck driver configured to move at least one of the first support chuck and the second support chuck such that the selected first light-emitting element chip on the intermediate substrate is attached to the second substrate.

11. The semiconductor manufacturing apparatus according to claim 10, wherein: The second spacing is an integer multiple of the first spacing.

12. The semiconductor manufacturing apparatus according to claim 10, wherein, The transmission head includes a support layer configured to hold the light-emitting element chip.

13. The semiconductor manufacturing apparatus according to claim 10, wherein: The transfer head is configured to transfer a selected second light-emitting element chip from a plurality of second light-emitting element chips arranged on a third substrate to the intermediate substrate, and The transmission head is configured to place each of the selected second light-emitting element chips next to each of the first light-emitting element chips on the intermediate substrate.

14. A semiconductor manufacturing apparatus, comprising: The transfer head includes a vacuum chuck, the vacuum chuck being configured to hold the light-emitting element chip in a vacuum. A vacuum pump configured to provide vacuum pressure to the conveyor head; as well as The transmission device is configured to transfer the light-emitting element chip on the first substrate to the second substrate. The vacuum chuck includes a porous material layer and a buffer layer on the lower surface of the porous material layer. A plurality of protrusions are arranged on the lower surface of the buffer layer, each of which has a vacuum hole formed therein. The vacuum hole extends from the upper surface of the buffer layer in contact with the porous material layer to the lower surface of the protrusion, but does not extend into the porous material layer. The vacuum pressure is configured to be formed by the vacuum pump in the porous material layer without vacuum holes, and the vacuum pressure is configured to be applied towards the lower surface of the protrusion via the vacuum hole in the buffer layer. The transmission device includes: A first support chuck is configured to support the first substrate, the first substrate including a first film and a first film frame located on the edge of the first film for supporting the first film, a chip array attached to the first film, the chip array including a plurality of light-emitting element chips, the plurality of light-emitting element chips being arranged at a first spacing. A second support chuck is configured to support a second substrate, the second substrate including a second film and a second film frame located on the edge of the second film for supporting the second film, the second film having a greater adhesive force than the first film, and the second support chuck being disposed on the first support chuck such that the second film faces the first film; and A chuck driver configured to move at least one of a first support chuck and a second support chuck, such that the chip array on the first membrane is attached to the second membrane. The first support chuck includes a central portion containing the chip array and a peripheral portion containing the first membrane frame. The chuck driver is constructed as follows: Move at least one of the first support chuck and the second support chuck so that the first membrane frame contacts the second membrane frame, and With the outer portion of the first support chuck fixed, the center portion of the first support chuck is moved toward the second support chuck, causing the chip array on the first film to attach to the second film. The buffer layer is disposed between the porous material layer and the protrusion, and The plurality of protrusions are arranged at a second spacing greater than the first spacing.

15. The semiconductor manufacturing apparatus of claim 14, further comprising a second laser irradiator configured to irradiate the first film with a laser to reduce the adhesion of the first film.

16. The semiconductor manufacturing apparatus according to claim 14, wherein, The first substrate further includes: A first alignment mark is located on the first membrane or the first membrane frame, and The second substrate further includes: The second alignment mark is located on the second membrane or the second membrane frame.

17. The semiconductor manufacturing apparatus of claim 16, further comprising a vision sensor configured to identify the first alignment mark and the second alignment mark. in, The chuck driver is configured to align the first support chuck and the second support chuck based on information identified by the vision sensor.

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