Light-emitting diode device

Abstract

Provided is a light-emitting diode device. The light-emitting diode device includes a wavelength conversion layer, a light-emitting diode layer, a light-transmitting layer, and a sheath layer. The wavelength conversion layer has a first refractive index. The light-emitting diode layer includes a base layer disposed on the wavelength conversion layer and a light-emitting structure disposed on the base layer. The light-transmitting layer is disposed on the wavelength conversion layer, surrounds and contacts the sidewall of the light-emitting diode layer, and has a second refractive index. The sheath layer is disposed to cover the light-emitting diode layer and the light-transmitting layer, and has a third refractive index less than the second refractive index.

Description

[0001] Cross - reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10 - 2018 - 0064846, filed with the Korean Intellectual Property Office on June 5, 2018, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] Devices, devices, and manufacturing articles consistent with the present disclosure relate to light - emitting diode devices. Background Art

[0004] Semiconductor light - emitting elements emit light by using the principle of recombination of electrons and holes when an electric current is applied, and are widely used as light sources due to various advantages such as low power consumption, high brightness, and miniaturization. In particular, due to the development of nitride - based light - emitting elements, semiconductor light - emitting elements are more widely applied in various fields and are used as light source modules, home lighting devices, automotive lamps, etc.

[0005] Since semiconductor light - emitting elements are widely used in various fields, their applications are expanding to high - current / high - output fields. Since semiconductor light - emitting elements are used in high - current / high - output fields as described above, research is being conducted in the related art to improve the reliability of semiconductor light - emitting element packages. Summary of the Invention

[0006] On the one hand, a light - emitting diode device with improved light extraction efficiency is provided.

[0007] According to an aspect of an exemplary embodiment, a light - emitting diode device is provided, including: a wavelength - conversion layer having a first refractive index; a light - emitting diode layer including a base layer disposed on the wavelength - conversion layer and a light - emitting structure disposed on the base layer; a light - transmissive layer disposed on the wavelength - conversion layer, surrounding and in contact with the sidewall of the light - emitting diode layer, and having a second refractive index; and a sheath layer disposed to cover the light - emitting diode layer and the light - transmissive layer and having a third refractive index less than the second refractive index.

[0008] According to another aspect of an exemplary embodiment, a light - emitting diode device is provided, including: a wavelength - conversion layer having a first refractive index; a light - emitting diode layer disposed on the wavelength - conversion layer; a light - transmissive layer disposed on the wavelength - conversion layer, surrounding the sidewall of the light - emitting diode layer, and having a second refractive index less than the first refractive index; a sheath layer disposed to cover the light - emitting diode layer and the light - transmissive layer and having a third refractive index less than the second refractive index; and a bump disposed on and electrically connected to the light - emitting diode layer.

[0009] According to another aspect of an exemplary embodiment, a light-emitting diode device is provided, including: a wavelength conversion layer having a first refractive index; a light-emitting diode layer including a base layer disposed on the wavelength conversion layer and a light-emitting structure disposed on the base layer; a light-transmitting layer disposed on the wavelength conversion layer, surrounding and in contact with the sidewalls of the light-emitting diode layer, and having a second refractive index smaller than the first refractive index; and a sheath layer disposed to cover the light-emitting diode layer and the light-transmitting layer, and having a third refractive index smaller than the first refractive index.

[0010] Aspects to be solved are not limited to those mentioned above, and based on the description provided below, those skilled in the art can clearly understand other aspects not mentioned above. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] The above and other aspects will become more apparent to those of ordinary skill in the art by describing the exemplary embodiments in detail with reference to the accompanying drawings, in which:

[0012] Figure 1 is a top view for explaining a light-emitting diode device according to some exemplary embodiments;

[0013] Figure 2 is along Figure 1 sectional view taken along line A-A of;

[0014] Figure 3 is for explaining Figure 2 view of the structure of part C of;

[0015] Figure 4 is along Figure 1 sectional view taken along line B-B of;

[0016] Figure 5 is a sectional view for explaining a light-emitting diode device according to some exemplary embodiments;

[0017] Figure 6 is a sectional view for explaining a light-emitting diode device according to some exemplary embodiments;

[0018] Figure 7 is a sectional view for explaining a light-emitting diode device according to some exemplary embodiments;

[0019] Figure 8 is a top view for explaining a light-emitting diode device according to some exemplary embodiments;

[0020] Figure 9 is along Figure 8 sectional view taken along line B-B of;

[0021] Figure 10is a top view for explaining a light emitting diode device according to some exemplary embodiments;

[0022] Figures 11 to 17 is a view showing an intermediate stage of manufacturing, for explaining a method of manufacturing a light emitting diode device according to some exemplary embodiments; and

[0023] Figure 18 and Figure 19 is a view showing an intermediate stage of manufacturing, for explaining a method of manufacturing a light emitting diode device according to some exemplary embodiments. DETAILED DESCRIPTION

[0024] The following description is made on the assumption that the light emitting diode device according to some exemplary embodiments is, for example, a chip scale package (CSP). However, the present disclosure is not limited thereto. That is, in some exemplary embodiments, the light emitting diode device may be a wafer level package (WLP). In the present disclosure, the phrase "at least one of A, B, and C" includes within its scope "only A", "only B", "only C", "both A and B", "both B and C", "both A and C", and "the group of A, B, and C" within its scope.

[0025] Hereinafter, reference will be made to Figures 1 to 4 to describe a light emitting diode device according to some exemplary embodiments.

[0026] Figure 1 is a top view for explaining a light emitting diode device according to some exemplary embodiments. Figure 2 is a cross-sectional view taken along the Figure 1 A-A line of. Figure 3 is for explaining Figure 2 the structure of part C of. Figure 4 is a cross-sectional view taken along the Figure 1 B-B line of. In Figure 1 for ease of explanation, the sheath layer 150 is omitted.

[0027] See Figures 1 to 4 , a light emitting diode device according to some exemplary embodiments includes a wavelength conversion layer 110, a light emitting diode layer 120, a light transmissive layer 140, a sheath layer 150, a first bump 161, and a second bump 162.

[0028] The wavelength conversion layer 110 may convert monochromatic light emitted from the light emitting diode layer 120 toward the wavelength conversion layer 110 into monochromatic light of a different color. A color filter layer may be provided on the wavelength conversion layer 110.

[0029] The wavelength conversion layer 110 may be formed into a sheet having a substantially regular thickness. The wavelength conversion layer 110 may be a film having a material such as a phosphor distributed on a partially cured (B-stage) material, which is in a partially cured state at room temperature and becomes mobile when heated.

[0030] As the phosphor of the wavelength conversion layer 110, garnet-based phosphors (YAG, TAG, LuAG), silicate-based phosphors, nitride-based phosphors, sulfide-based phosphors, oxide-based phosphors, etc. can be used. The phosphor may be formed of a single material or a plurality of materials mixed in a predetermined ratio. In addition, quantum dots can be used and can replace or be mixed with the phosphor of the wavelength conversion layer 110.

[0031] As the resin for the wavelength conversion layer 110, an epoxy resin or a silicone epoxy resin that satisfies high adhesiveness, high light transmittance, high heat resistance, high light refractive index, moisture resistance, etc. can be used. As an additive for enhancing the adhesiveness to ensure high adhesiveness, a silane-based material can be used, for example.

[0032] The wavelength conversion layer 110 may have a first refractive index. For example, the first refractive index may be greater than or equal to 1.53 and may be less than 1.56. However, the present disclosure is not limited thereto.

[0033] In some exemplary embodiments, the wavelength conversion layer 110 may be replaced with a sheath layer including a dispersant.

[0034] The light-emitting diode layer 120 may be disposed on the wavelength conversion layer 110. The light-emitting diode layer 120 may include a base layer 121 and a light-emitting structure 130.

[0035] Although Figure 2 it is depicted that the base layer 121 is a single layer, the present disclosure is not limited thereto. That is, in some exemplary embodiments, the base layer 121 may be a multi-layer in which various layers are stacked on each other.

[0036] The base layer 121 may be disposed on the wavelength conversion layer 110. The base layer 121 may include, for example, a substrate. The substrate may be, for example, sapphire glass, but the present disclosure is not limited thereto.

[0037] The base layer 121 may include, for example, a nitride-based semiconductor material. The base layer 121 may include at least one of, for example, GaN, AlGaN, InGaN, AlInGaN, and combinations thereof. In addition, the base layer 121 may include silicon oxide (SiO 2 )).

[0038] The base layer 121 may have a fourth refractive index greater than the first refractive index of the wavelength conversion layer 110. For example, the fourth refractive index is 1.75. However, the present disclosure is not limited thereto.

[0039] The light-emitting structure 130 may include a first-conductive-type semiconductor layer 131, an active layer 132, a second-conductive-type semiconductor layer 133, an N electrode 134, a P electrode 135, and an insulating layer 136.

[0040] The light-emitting structure 130 may include a first surface and a second surface, on which a first bump 161 and a second bump 162 are disposed, and the second surface is in contact with the base layer 121.

[0041] The first-conductive-type semiconductor layer 131 may be disposed on the second surface of the light-emitting structure 130. The first-conductive-type semiconductor layer 131 may include a GaN-based material containing an n-type impurity. In this case, the n-type impurity may be at least one of, for example, Si, Ge, Se, and Te.

[0042] The active layer 132 may be disposed on the first-conductive-type semiconductor layer 131. The active layer 132 may be a multi-quantum well (MQW) structure in which quantum well layers and quantum barrier layers are alternately stacked. The quantum barrier layer may be, for example, GaN or AlGaN. However, the present disclosure is not limited thereto. That is, in some exemplary embodiments, the active layer 132 may be a single quantum well (SQW) structure.

[0043] The second-conductive-type semiconductor layer 133 may be disposed on the active layer 132. The second-conductive-type semiconductor layer 133 may include a GaN-based material containing a p-type impurity. In this case, the p-type impurity may be at least one of, for example, Mg, Zn, and Be.

[0044] The N electrode 134, the P electrode 135, and the insulating layer 136 may be disposed on the first surface of the light-emitting structure 130.

[0045] The N electrode 134 may extend from the first surface of the light-emitting structure 130 in the third direction DR3 to penetrate the second-conductive-type semiconductor layer 133 and the active layer 132. The N electrode 134 may be disposed to be in contact with the first-conductive-type semiconductor layer 131 and electrically connected to the first-conductive-type semiconductor layer 131.

[0046] The N electrode 134 may be electrically connected to the first bump 161 disposed on the first surface of the light-emitting structure 130.

[0047] The P electrode 135 may be disposed on the first surface of the light-emitting structure 130. The P electrode 135 may be disposed to be in contact with the second-conductive-type semiconductor layer 133 and electrically connected to the second-conductive-type semiconductor layer 133.

[0048] The P electrode 135 may be electrically connected to the second bump 162 disposed on the first surface of the light-emitting structure 130.

[0049] Each of the N electrode 134 and the P electrode 135 may include at least one of, for example, Au, Ag, Cu, Zn, Al, In, Ti, Si, Ge, Sn, Mg, Ta, Cr, W, Ru, Rh, Ir, Ni, Pd, Pt, and a transparent conductive oxide (TCO).

[0050] The insulating layer 136 may be disposed on the first surface of the light-emitting structure 130. The insulating layer 136 may be disposed to surround the respective sidewalls of the N electrode 134 and the P electrode 135. A part of the insulating layer 136 may be disposed to penetrate the second-conductive-type semiconductor layer 133 and the active layer 132 along the sidewall of the N electrode 134.

[0051] The insulating layer 136 may be formed of a material having insulating properties and may be formed by using an inorganic or organic material. The insulating layer 136 may be formed of an epoxy-based insulating resin and may include silicon oxide or silicon nitride. The insulating layer 136 may include, for example, SiO 2 、SiN、SiO x N y 、TiO 2 、Si 3 N 4 、Al 2 O 3 、TiN, AlN, ZrO 2 、TiAlN, and TiSiN.

[0052] The first bump 161 may be disposed to protrude from the first surface of the light-emitting structure 130 and may be electrically connected to the N electrode 134. The second bump 162 may be disposed to protrude from the first surface of the light-emitting structure 130 and may be electrically connected to the P electrode 135.

[0053] See Figure 1 , the planar shape of each of the first bump 161 and the second bump 162 may have, for example, a rectangular shape. However, the present disclosure is not limited thereto. That is, in some exemplary embodiments, the planar shape of each of the first bump 161 and the second bump 162 may have, for example, an elliptical shape or a circular shape.

[0054] The light-transmitting layer 140 may be disposed on the wavelength-converting layer 110 and may be disposed to surround the sidewall of the light-emitting diode layer 120. That is, as Figure 1As shown, the light transmissive layer 140 may be disposed on the sidewalls of the light emitting diode layer 120. The light transmissive layer 140 may surround the sidewalls of the light emitting diode layer 120 in the DR1 / DR2 plane (i.e., when viewed from the top). The light transmissive layer 140 may be disposed to contact at least a portion of the sidewalls of the light emitting diode layer 120 in the DR3 direction. In some exemplary embodiments, at least a portion of the sidewalls of the light emitting diode layer 120 may be disposed to contact the sheath layer 150.

[0055] See Figure 1 , the light transmissive layer 140 may be formed to protrude from the sidewalls of the light emitting diode layer 120. Specifically, the light transmissive layer 140 may be formed to protrude from the sidewalls of the light emitting diode layer 120 extending in the first direction DR1 along the second direction DR2. Additionally, the light transmissive layer 140 may be formed to protrude from the sidewalls of the light emitting diode layer 120 extending in the second direction DR2 along the first direction DR1.

[0056] In Figure 1 , the light transmissive layer 140 in contact with the sidewalls of the light emitting diode layer 120 corresponding to the vertices where the respective corners of the light emitting diode layer 120 meet may be formed to be relatively recessed. Figure 4 Illustratively depicted is a cross-section of the light transmissive layer 140 formed to be relatively recessed in the fourth direction DR4.

[0057] In Figure 1 , a portion of the sidewalls of the light emitting diode layer 120 corresponding to the vertices where the respective corners of the light emitting diode layer 120 meet may be disposed not to be surrounded by the light transmissive layer 140, as Figure 4 shown. That is, in Figure 1 , a portion of the sidewalls corresponding to each vertex of the light emitting diode layer 120 may be disposed to contact the sheath layer 150.

[0058] Although Figure 4 depicts a portion of the sidewalls of the base layer 121 and the sidewalls of the light emitting structure 130 in contact with the sheath layer 150, the present disclosure is not limited thereto. That is, in some exemplary embodiments, the sidewalls of the base layer 121 may be disposed to be completely surrounded by the light transmissive layer 140, and a portion of the sidewalls of the light emitting structure 130 may be disposed to contact the sheath layer 150.

[0059] When the light transmissive layer 140 is closer to the wavelength conversion layer 110, the light transmissive layer 140 may be formed to have an increased width. That is, the sidewalls of the light transmissive layer 140 in contact with the sheath layer 150 may be formed to have an inclined profile.

[0060] The light transmissive layer 140 may have a second refractive index. The second refractive index may be, for example, greater than or equal to 1.48 and less than 1.53. That is, the second refractive index of the light transmissive layer 140 may be less than the first refractive index of the wavelength conversion layer 110. However, the present disclosure is not limited thereto. That is, in some exemplary embodiments, the second refractive index of the light transmissive layer 140 may be substantially the same as the first refractive index of the wavelength conversion layer 110.

[0061] The sheath layer 150 may be provided to cover the exposed portions of the light emitting diode layer 120, the light transmissive layer 140, and the wavelength conversion layer 110.

[0062] The sheath layer 150 may be provided to at least partially surround the sidewalls of the first bump 161 and at least partially surround the sidewalls of the second bump 162, for example, as Figure 2 and Figure 5 shown. That is, a portion of the sidewalls of the first bump 161 and a portion of the sidewalls of the second bump 162 may be exposed above the sheath layer 150, for example, as Figure 2 and Figure 6 etc. shown.

[0063] The sheath layer 150 may include a material having a high thermal conductivity to effectively release the heat generated in the light emitting diode layer 120. For example, the sheath layer 150 may include epoxy resin or silicone resin.

[0064] In addition, the sheath layer 150 may include a light reflecting material, such as TiO 2 or Al 2 O 3 to reflect light. However, the present disclosure is not limited thereto.

[0065] The sheath layer 150 may have a third refractive index. For example, the third refractive index may be greater than or equal to 1.41 and less than 1.48. That is, the third refractive index of the sheath layer 150 may be less than the second refractive index of the light transmissive layer 140. In addition, the third refractive index of the sheath layer 150 may be less than the first refractive index of the wavelength conversion layer 110.

[0066] The refractive indices of each of the wavelength conversion layer 110, the light transmissive layer 140, the sheath layer 150, and the base layer 121 may be adjusted by using methyl siloxane, methyl-phenyl siloxane, and phenyl siloxane.

[0067] Specifically, for example, the methyl siloxane may have a refractive index of, for example, 1.38 to 1.41. For example, when the methyl-phenyl siloxane contains 20% or more of phenyl, the methyl-phenyl siloxane may have a refractive index of 1.44 to 1.48, and when the methyl-phenyl siloxane contains 40% or more of phenyl, the methyl-phenyl siloxane may have a refractive index of 1.50 to 1.55. The phenyl siloxane may have a refractive index of, for example, 1.56 to 1.58.

[0068] The methyl siloxane, methyl-phenyl siloxane, and phenyl siloxane can be included by combining them with the substrates of each of the wavelength conversion layer 110, light transmission layer 140, sheath layer 150, and base layer 121 to adjust the refractive index of each of the wavelength conversion layer 110, light transmission layer 140, sheath layer 150, and base layer 121. That is, the refractive index can be adjusted by combining the substrate with one or more of the methyl siloxane, methyl-phenyl siloxane, and phenyl siloxane.

[0069] The light-emitting diode device according to some exemplary embodiments can enhance the reflection efficiency at the interface between the light transmission layer 140 and the sheath layer 150 by making the second refractive index of the light transmission layer 140 greater than the third refractive index of the sheath layer 150.

[0070] Furthermore, the light-emitting diode device according to some exemplary embodiments can reduce the light loss caused by total internal reflection occurring at the interface between the base layer 121 and the light transmission layer 140 by making the second refractive index of the light transmission layer 140 relatively high compared to the third refractive index, thereby reducing the difference from the fourth refractive index of the base layer 121.

[0071] In addition, the light-emitting diode device according to some exemplary embodiments can reduce the light loss caused by total internal reflection occurring at the interface between the base layer 121 and the wavelength conversion layer 110 and at the interface between the light transmission layer 140 and the wavelength conversion layer 110 by making the first refractive index of the wavelength conversion layer 110 higher than the second refractive index of the light transmission layer 140 and the third refractive index of the sheath layer 150.

[0072] Hereinafter, reference will be made to Figure 5 Describe the light-emitting diode device according to some exemplary embodiments. Emphasis will be placed on the differences from Figure 2 The shown light-emitting diode device.

[0073] Figure 5 Is a cross-sectional view for illustrating the light-emitting diode device according to some exemplary embodiments.

[0074] See Figure 5, according to some exemplary embodiments, a light-emitting diode device may have a sheath layer 250 formed to completely surround the sidewalls of the first bump 161 and the second bump 162.

[0075] That is, the upper surface of the sheath layer 250 may be coplanar with the upper surfaces of the first bump 161 and the second bump 162. The upper surfaces of the first bump 161 and the second bump 162 may be exposed on the sheath layer 250.

[0076] Hereinafter, reference will be made to Figure 6 Describe a light-emitting diode device according to some exemplary embodiments. Emphasis will be placed on the differences from the Figure 2 Light-emitting diode device shown.

[0077] Figure 6 Is a cross-sectional view for illustrating a light-emitting diode device according to some exemplary embodiments.

[0078] See Figure 6 , according to some exemplary embodiments, a light-emitting diode device may form the upper portion of the light-transmissive layer 340 to protrude more than the upper surface of the light-emitting diode layer 120. The upper portion of the light-transmissive layer 340 may be coplanar with the upper surface of the sheath layer 350.

[0079] At least a portion of the sheath layer 350 may be disposed between the light-transmissive layer 340 and the first bump 161 and the second bump 162. Specifically, the first sheath layer 351 may be disposed to surround a portion of the sidewall of the first bump 161 and a portion of the sidewall of the second bump 162, and the sidewall of the light-transmissive layer 340 may be disposed to surround the sidewall of the first sheath layer 351. In addition, the second sheath layer 352 may be disposed to cover the exposed portions of the light-transmissive layer 340 and the wavelength conversion layer 110.

[0080] Hereinafter, reference will be made to Figure 7 Describe a light-emitting diode device according to some exemplary embodiments. Emphasis will be placed on the differences from the Figure 2 Light-emitting diode device shown.

[0081] Figure 7 Is a cross-sectional view for illustrating a light-emitting diode device according to some exemplary embodiments.

[0082] See Figure 7 , according to some exemplary embodiments, a light-emitting diode device may form the upper surface of the light-emitting diode layer 120 to be coplanar with the upper surface of the sheath layer 450. That is, in the Figure 7 Exemplary embodiment shown, the sheath layer 450 does not contact the first bump 161 and the second bump 162.

[0083] Hereinafter, reference will be made toFigure 8 and Figure 9 describe a light emitting diode device according to some exemplary embodiments. Emphasis will be placed on the differences from the light emitting diode devices shown in Figure 1 and Figure 4 the light emitting diode device shown in

[0084] Figure 8 is a cross-sectional view for illustrating a light emitting diode device according to some exemplary embodiments. Figure 9 is a cross-sectional view taken along the B-B line of Figure 8 See

[0085] Referring to Figure 8 and Figure 9 a light emitting diode device according to some exemplary embodiments can be configured such that the sidewalls of the light emitting diode layer 120 are completely surrounded by the light transmissive layer 540.

[0086] That is, referring to Figure 9 which schematically depicts a cross-section in the fourth direction DR4, the light transmissive layer 540 can be configured to completely surround the sidewalls of the base layer 121 and the sidewalls of the light emitting structure 130.

[0087] As Figure 8 shown, the light transmissive layer 540 can have a circular shape in a top view. However, the present disclosure is not limited thereto.

[0088] Hereinafter, a light emitting diode device according to some exemplary embodiments will be described with reference to Figure 10 Emphasis will be placed on the differences from the light emitting diode devices shown in Figure 1 and Figure 4 the light emitting diode device shown in

[0089] Figure 10 is a top view for illustrating a light emitting diode device according to some exemplary embodiments.

[0090] Referring to Figure 10 a light emitting diode device according to some exemplary embodiments can have a light transmissive layer 640 formed in a rectangular shape in a top view.

[0091] In addition, the sidewalls of the light emitting diode layer 120 can be configured to be completely surrounded by the light transmissive layer 640.

[0092] Hereinafter, a method of manufacturing a light emitting diode device according to some exemplary embodiments will be described with reference to Figures 11 to 17 See

[0093] Figures 11 to 17 is a view showing an intermediate stage of manufacturing for illustrating a method of manufacturing a light emitting diode device according to some exemplary embodiments.

[0094] Referring toFigure 11 A wavelength conversion layer 110 can be formed on the substrate 100. The wavelength conversion layer 110 can be formed into a sheet having a substantially regular thickness.

[0095] Referring to Figure 12 An optically transmissive material layer 140a can be formed on the wavelength conversion layer 110. A plurality of the optically transmissive material layers 140a can be spaced apart from each other and can be formed to protrude from the surface of the wavelength conversion layer 110.

[0096] Although Figure 12 the optically transmissive material layer 140a is depicted as being formed in a hemispherical shape, this is merely for ease of illustration and the shape of the optically transmissive material layer 140a is not particularly limited.

[0097] Referring to Figure 13 a light-emitting diode layer 120 having a first bump 161 and a second bump 162 formed thereon can be positioned on each of the optically transmissive material layers 140a ( Figure 12 ).

[0098] The optically transmissive material layer 140a ( Figure 12 ) formed to surround the sidewall of the light-emitting diode layer 120 can be defined as the optically transmissive layer 140. At least a part of the upper portion of the optically transmissive layer 140 can be coplanar with the upper surface of the light-emitting diode layer 120.

[0099] Referring to Figure 14 a molding auxiliary material 170 can be positioned in contact with the respective bumps 161, 162 formed on each of the light-emitting diode layers 120.

[0100] The molding auxiliary material 170 can include a molding tape 171, an adhesive layer 172 formed on the lower surface of the molding tape 171, and an anti-sticking layer 173 formed on the lower surface of the adhesive layer 172.

[0101] The upper surfaces of the bumps 161, 162 can penetrate the anti-sticking layer 173 and the adhesive layer 172 and can be attached to the lower surface of the molding tape 171.

[0102] Next, a molding material can be filled between the respective light-emitting diode layers 120 through an opening 174 formed to penetrate the molding auxiliary material 170.

[0103] Referring to Figure 15 the molding material filled between the respective optically transmissive layers 140 and between the light-emitting diode layer 120 and the anti-sticking layer 173 can form a sheath layer 150.

[0104] Referring to Figure 16, the molding auxiliary material 170 can be removed. When removing the molding auxiliary material 170, the anti-sticking layer 173 can be peeled off from the sheath layer 150. The anti-sticking layer 173 is formed on the lowermost surface of the molding auxiliary material 170 so that the anti-sticking layer 173 can be peeled off from the sheath layer 150. Therefore, defects caused by removing a part of the sheath layer 150 during the removal of the molding auxiliary material 170 can be prevented.

[0105] Next, the substrate 100 formed on the lower surface of the wavelength conversion layer 110 can be removed.

[0106] See Figure 17 , a light-emitting diode device can be manufactured by cutting the sheath layer 150 and the wavelength conversion layer 110.

[0107] Hereinafter, with reference to Figure 18 and Figure 19 a method of manufacturing a light-emitting diode device according to some exemplary embodiments will be described.

[0108] Figure 18 and Figure 19 are views showing intermediate stages of manufacturing for illustrating a method of manufacturing a light-emitting diode device according to some exemplary embodiments. The differences from the method of manufacturing the light-emitting diode device shown in Figures 11 to 17 will be emphasized.

[0109] See Figure 18 , a light-transmitting layer 140, a light-emitting diode layer 120, and a sheath layer 150 can be formed on the substrate 100.

[0110] Specifically, the processes described above with reference to Figures 12 to 15 can be performed on the substrate 100.

[0111] More specifically, a light-transmitting material layer 140a ( Figure 12 ) can be formed on the substrate 100. Next, the light-emitting diode layer 120 having the first bump 161 and the second bump 162 formed thereon can be positioned on the light-transmitting material layer 140a ( Figure 12 ). Next, the molding auxiliary material 170 ( Figure 14 ) can be positioned in contact with the respective bumps 161, 162 formed on each light-emitting diode layer 120. Next, a sheath layer 150 can be formed by filling a molding material between each light-emitting diode layer 120 through an opening 174 ( Figure 14 ) formed to penetrate the molding auxiliary material 170 ( Figure 14 ). Next, the molding auxiliary material 170 can be removed.

[0112] See Figure 19 , the substrate 100 can be removed.

[0113] Next, a light-emitting diode device can be manufactured by performing Figure 16 and Figure 17 the processes described in

[0114] Specifically, Figure 19 the structure without the substrate 100 shown in

[0115] The exemplary embodiments have been explained above with reference to the accompanying drawings. However, it should be understood that the present disclosure is not limited to the foregoing exemplary embodiments, but can be manufactured in various different forms and can be implemented in other specific forms by those skilled in the art without changing the technical concept or essential features of the present disclosure. Therefore, it should be understood that the above exemplary embodiments are merely illustrative and should not be construed as limiting the appended claims.

Claims

1. A light-emitting diode device, comprising: a wavelength conversion layer having a first refractive index; a light-emitting diode layer including a base layer and a light-emitting structure, the base layer being disposed on the wavelength conversion layer, and the light-emitting structure being disposed on the base layer; a light-transmitting layer disposed on the wavelength conversion layer, surrounding and in contact with a sidewall of the light-emitting diode layer, and having a second refractive index less than or equal to the first refractive index; and a sheath layer disposed to cover the light-emitting diode layer and the light-transmitting layer, and having a third refractive index less than the second refractive index.

2. The light-emitting diode device according to claim 1, wherein the first refractive index is greater than the second refractive index.

3. The light-emitting diode device according to claim 2, wherein the base layer has a fourth refractive index greater than the first refractive index.

4. The light-emitting diode device according to claim 1, wherein at least a part of the sidewall of the light-emitting diode layer is in contact with the sheath layer.

5. The light-emitting diode device according to claim 1, further comprising: a first bump and a second bump disposed on a first surface of the light-emitting structure and electrically connected to the light-emitting structure; an N electrode disposed on the first surface of the light-emitting structure and electrically connected to the first bump; and a P electrode disposed on the first surface of the light-emitting structure and electrically connected to the second bump.

6. The light-emitting diode device according to claim 5, wherein the sheath layer surrounds at least a part of the sidewall of the first bump and at least a part of the sidewall of the second bump.

7. The light-emitting diode device according to claim 6, wherein the sheath layer completely surrounds the sidewalls of the first bump and the second bump.

8. The light-emitting diode device according to claim 1, wherein the first refractive index is the same as the second refractive index.

9. The light-emitting diode device according to claim 1, wherein the sidewall of the light-emitting diode layer is completely surrounded by the light-transmitting layer.

10. The light-emitting diode device according to claim 1, wherein a first upper surface of the light-emitting diode layer and a second upper surface of the sheath layer are coplanar with each other.

11. A light-emitting diode device, comprising: a wavelength conversion layer having a first refractive index; a light-emitting diode layer disposed on the wavelength conversion layer; a light-transmitting layer disposed on the wavelength conversion layer, surrounding a sidewall of the light-emitting diode layer, and having a second refractive index less than the first refractive index; a sheath layer disposed to cover the light-emitting diode layer and the light-transmitting layer, and having a third refractive index less than the second refractive index; and a bump disposed on the light-emitting diode layer and electrically connected to the light-emitting diode layer.

12. The light-emitting diode device according to claim 11, wherein the light-transmitting layer is in contact with the sidewall of the light-emitting diode layer.

13. The light-emitting diode device according to claim 11, wherein The sheath layer does not contact the bump.

14. The light emitting diode device according to claim 11, wherein, at least a part of the sheath layer is disposed between the bump and the light transmissive layer.

15. The light emitting diode device according to claim 11, wherein, the sidewall of the light emitting diode layer is completely surrounded by the light transmissive layer.

16. A light emitting diode device, comprising: a wavelength conversion layer having a first refractive index; a light emitting diode layer including a base layer and a light emitting structure, the base layer being disposed on the wavelength conversion layer, and the light emitting structure being disposed on the base layer; a light transmissive layer disposed on the wavelength conversion layer, surrounding and contacting the sidewall of the light emitting diode layer, and having a second refractive index smaller than the first refractive index; and a sheath layer disposed to cover the light emitting diode layer and the light transmissive layer, and having a third refractive index smaller than the first refractive index.

17. The light emitting diode device according to claim 16, wherein, the second refractive index is greater than the third refractive index.

18. The light emitting diode device according to claim 16, wherein, the base layer has a fourth refractive index, and the fourth refractive index is greater than the first refractive index.

19. The light emitting diode device according to claim 16, further comprising a bump disposed on the light emitting structure and electrically connected to the light emitting structure, wherein, the sheath layer surrounds at least a part of the sidewall of the bump.

20. The light emitting diode device according to claim 16, wherein, at least a part of the sidewall of the light emitting diode layer contacts the sheath layer.

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