Oxide thin film transistor and driving method thereof, and display device

Abstract

The present invention provides an oxide thin film transistor and a driving method thereof, and a display device, which relate to the technical field of thin film transistors, and solve the problem that the oxide active layer in the oxide thin film transistor is prone to local degradation, thereby affecting the yield of the display panel. The oxide thin film transistor includes: a gate; a first active layer structure and a second active layer structure arranged in sequence, the first active layer structure includes a first conductive connection part and a second conductive connection part arranged oppositely, and a first oxide semiconductor pattern coupled to the first conductive connection part and the second conductive connection part respectively; the second active layer structure includes a third conductive connection part and a fourth conductive connection part arranged oppositely, and a second oxide semiconductor pattern coupled to the third conductive connection part and the fourth conductive connection part respectively; the second conductive connection part is coupled to the third conductive connection part. The oxide thin film transistor provided by the present invention is used to drive pixels to emit light.

Description

Technical Field

[0001] The present invention relates to the technical field of thin film transistors, and in particular to an oxide thin film transistor and a driving method thereof, and a display device. Background Art

[0002] Oxide thin film transistors have become the first choice for large-size, high-resolution, low-power, and narrow-frame display panels due to their high electron mobility, low off-state current, and simple manufacturing process. However, during the manufacturing process of such oxide thin film transistors, due to the instability of the oxide active layer manufacturing process, the oxide active layer is prone to local degradation, which in turn affects the yield of the display panel. Summary of the invention

[0003] The object of the present invention is to provide an oxide thin film transistor and a driving method thereof, and a display device, so as to solve the problem that the oxide active layer in the oxide thin film transistor is prone to local degradation, thereby affecting the yield of the display panel.

[0004] In order to achieve the above object, the present invention provides the following technical solutions:

[0005] A first aspect of the present invention provides an oxide thin film transistor, comprising:

[0006] A gate disposed on the substrate;

[0007] At least two active layer structures are arranged in sequence along a first direction, and the at least two active layer structures include a first active layer structure and a second active layer structure, the first active layer structure includes: a first conductive connection part and a second conductive connection part arranged opposite to each other, and a first oxide semiconductor pattern located between the first conductive connection part and the second conductive connection part and coupled to the first conductive connection part and the second conductive connection part respectively; the second active layer structure includes: a third conductive connection part and a fourth conductive connection part arranged opposite to each other, and a second oxide semiconductor pattern located between the third conductive connection part and the fourth conductive connection part and coupled to the third conductive connection part and the fourth conductive connection part respectively; the orthographic projection of the first oxide semiconductor pattern on the substrate and the orthographic projection of the second oxide semiconductor pattern on the substrate are both located inside the orthographic projection of the gate on the substrate; the second conductive connection part is coupled to the third conductive connection part.

[0008] Optionally, an orthographic projection of the first conductive connection portion on the substrate and an orthographic projection of the first oxide semiconductor pattern on the substrate form a first overlapping region;

[0009] The orthographic projection of the second conductive connection portion on the substrate and the orthographic projection of the first oxide semiconductor pattern on the substrate form a second overlapping region;

[0010] The orthographic projection of the third conductive connection portion on the substrate and the orthographic projection of the second oxide semiconductor pattern on the substrate form a third overlapping region;

[0011] The orthographic projection of the fourth conductive connection portion on the substrate and the orthographic projection of the second oxide semiconductor pattern on the substrate form a fourth overlapping region;

[0012] The second overlapping region and the third overlapping region are located between the first overlapping region and the fourth overlapping region.

[0013] Optionally, the thin film transistor also includes a first overlapping portion, and the second conductive connection portion and the third conductive connection portion are coupled through the first overlapping portion, and the orthographic projection of the first overlapping portion on the substrate does not overlap with the orthographic projection of the first oxide semiconductor pattern on the substrate, and does not overlap with the orthographic projection of the second oxide semiconductor pattern on the substrate.

[0014] Optionally, the first oxide semiconductor pattern and the second oxide semiconductor pattern are arranged in sequence along a first direction and staggered along a second direction perpendicular to the first direction.

[0015] Optionally, the orthographic projection of the first oxide semiconductor pattern in the second direction and the orthographic projection of the second oxide semiconductor pattern in the second direction form a fifth overlapping region, and the second conductive connection portion, the first overlapping portion and the third conductive connection portion form an integrated I-shaped structure extending along the second direction, and the size of the fifth overlapping region in the first direction is the same as the width of the I-shaped structure along the first direction.

[0016] Optionally, the first oxide semiconductor pattern and the second oxide semiconductor pattern are formed into an integrated structure, and the second conductive connection portion is reused as the third conductive connection portion.

[0017] Optionally, the first conductive connection portion includes a first portion extending along a second direction perpendicular to the first direction, and a second portion extending from the first portion along the second direction, the orthographic projection of the first portion on the substrate and the orthographic projection of the first oxide semiconductor pattern on the substrate form the first overlapping area, and the orthographic projection of the second portion on the substrate does not overlap with the orthographic projection of the first oxide semiconductor pattern on the substrate.

[0018] Optionally, the fourth conductive connection portion includes a third portion and a fourth portion, the third portion extends along a second direction perpendicular to the first direction, and an orthographic projection of the third portion on the substrate partially overlaps with an orthographic projection of the second oxide semiconductor pattern on the substrate to form the fourth overlapping region;

[0019] The fourth portion extends along the first direction, the orthographic projection of the fourth portion on the substrate does not overlap with the orthographic projection of the second oxide semiconductor pattern on the substrate, and the fourth portion is coupled to the first end of the third portion, and the orthographic projection of the first end on the substrate does not overlap with the orthographic projection of the second oxide semiconductor pattern on the substrate.

[0020] Optionally, an orthographic projection of the first conductive connection portion on the substrate and an orthographic projection of the first oxide semiconductor pattern on the substrate form a first overlapping region;

[0021] The orthographic projection of the second conductive connection portion on the substrate and the orthographic projection of the first oxide semiconductor pattern on the substrate form a second overlapping region;

[0022] The orthographic projection of the third conductive connection portion on the substrate and the orthographic projection of the second oxide semiconductor pattern on the substrate form a third overlapping region;

[0023] The orthographic projection of the fourth conductive connection portion on the substrate and the orthographic projection of the second oxide semiconductor pattern on the substrate form a fourth overlapping region;

[0024] In a second direction perpendicular to the first direction, the second overlapping region and the third overlapping region are located on a first side of the first oxide semiconductor pattern, the first overlapping region and the fourth overlapping region are located on a second side of the second oxide semiconductor pattern, and the first side and the second side are opposite.

[0025] Optionally, the thin film transistor further includes a second overlapping portion, the second conductive connection portion and the third conductive connection portion are coupled via the second overlapping portion, and an orthographic projection of the second overlapping portion on the substrate does not overlap with an orthographic projection of the first oxide semiconductor pattern on the substrate, and does not overlap with an orthographic projection of the second oxide semiconductor pattern on the substrate;

[0026] The second conductive connection portion, the second overlapping portion, and the third conductive connection portion are formed into a straight-line structure along the first direction.

[0027] Optionally, the first conductive connection portion includes a fifth portion and a sixth portion coupled to each other, the fifth portion extends along the first direction, and the orthographic projection of the fifth portion on the substrate and the orthographic projection of the first oxide semiconductor pattern on the substrate form the first overlapping area; the sixth portion extends along the second direction, and the orthographic projection of the sixth portion on the substrate does not overlap with the orthographic projection of the first oxide semiconductor pattern on the substrate.

[0028] Optionally, the fourth conductive connection portion includes a seventh portion, an eighth portion and a ninth portion; wherein the seventh portion extends along the first direction, and an orthographic projection of the seventh portion on the substrate and an orthographic projection of the second oxide semiconductor pattern on the substrate form the fourth overlapping region;

[0029] The ninth portion extends along the first direction, and an orthographic projection of the ninth portion on the substrate does not overlap with an orthographic projection of the second oxide semiconductor pattern on the substrate;

[0030] The eighth portion extends along the second direction, the orthographic projection of the eighth portion on the substrate is located between the orthographic projection of the seventh portion on the substrate and the orthographic projection of the ninth portion on the substrate, and does not overlap with the orthographic projection of the second oxide semiconductor pattern on the substrate, and the seventh portion is coupled to the ninth portion through the eighth portion.

[0031] Optionally, the first oxide semiconductor pattern and the second oxide semiconductor pattern are provided in the same layer and with the same material.

[0032] Based on the technical solution of the above-mentioned oxide thin film transistor, a second aspect of the present invention provides a display device, comprising the above-mentioned oxide thin film transistor.

[0033] Based on the technical solution of the above oxide thin film transistor, a third aspect of the present invention provides a driving method of an oxide thin film transistor, which is used to drive the above oxide thin film transistor. The driving method includes:

[0034] A driving signal is applied to the gate of the oxide thin film transistor, the second conductive connection portion included in the first active layer structure, and the fourth conductive connection portion included in the second active layer structure to turn on the oxide thin film transistor.

[0035] In the technical solution provided by the present invention, an oxide thin film transistor is provided to include the at least two active layer structures, so that when the oxide thin film transistor is in operation, it can form at least two channel structures connected in series, so that when the oxide semiconductor pattern in an active layer structure in the oxide thin film transistor deteriorates, it will only affect the performance of the sub-Oxide TFT corresponding to the active layer structure, that is, the characteristic curve of the sub-Oxide TFT is shifted to the left, while other sub-Oxide TFTs still maintain a normal working state.

[0036] In more detail, when the oxide semiconductor pattern of a sub-Oxide TFT deteriorates, the on-state current Ion and the off-state current Ioff of the sub-Oxide TFT will increase. In this way, when each sub-Oxide TFT is controlled to be in an on state and the oxide thin film transistor is turned on as a whole, the on-state current Ion of the oxide thin film transistor as a whole increases due to the influence of the on-state current Ion of the sub-Oxide TFT, thereby effectively improving the charging capacity of the oxide thin film transistor; and when the oxide thin film transistor is turned off, each sub-Oxide TFT is in an off state, so even if the off-state current Ioff of the sub-Oxide TFT increases, it cannot flow out of the oxide thin film transistor through other sub-Oxide TFTs, so the increased off-state current Ioff will not affect the off-state current Ioff of the oxide thin film transistor as a whole, so that the off-state current Ioff of the oxide thin film transistor as a whole can still be maintained at a low level. Therefore, the oxide thin film transistor provided in the embodiment of the present invention not only has high stability, but also has strong driving capability. When the oxide thin film transistor provided in the embodiment of the present invention is used to drive the pixels in the display panel to emit light, the display panel is prevented from generating driving bright spots and sand mura defects. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0038] Figure 1 A first structural schematic diagram of an oxide thin film transistor provided by an embodiment of the present invention;

[0039] Figure 2 A schematic diagram of degradation of the active layer structure of an oxide thin film transistor of the first structure;

[0040] Figure 3 A second structural schematic diagram of an oxide thin film transistor provided by an embodiment of the present invention;

[0041] Figure 4 is a schematic diagram of degradation of the active layer structure of the oxide thin film transistor of the second structure;

[0042] Figure 5 A third structural schematic diagram of an oxide thin film transistor provided by an embodiment of the present invention;

[0043] Figure 6 for Figure 5 Schematic diagram of the cross section along the A1A2 direction;

[0044] Figure 7 A schematic diagram of degradation of the active layer structure of the oxide thin film transistor of the third structure;

[0045] Figure 8 A fourth structural schematic diagram of an oxide thin film transistor provided by an embodiment of the present invention;

[0046] Fig. 9 Schematic diagram of degradation of the active layer structure of the oxide thin film transistor with the fourth structure.

[0047] Reference numerals:

[0048] 1-substrate, 2-gate,

[0049] 31-first active layer structure, 311-first conductive connection portion,

[0050] 3110-Part 1, 3111-Part 2,

[0051] 3112-Part 5, 3113-Part 6,

[0052] 312 - first oxide semiconductor pattern, 313 - second conductive connection portion,

[0053] 32-second active layer structure, 321-third conductive connection portion,

[0054] 322 - second oxide semiconductor pattern, 323 - fourth conductive connection portion,

[0055] 3230-Part 3, 3231-Part 4,

[0056] 3232-Part 7, 3233-Part 8,

[0057] 3234-Part 9, 4-First lap joint,

[0058] 5-second overlapping portion, 6-gate insulating layer. DETAILED DESCRIPTION

[0059] In order to further illustrate an oxide thin film transistor and a driving method thereof, and a display device provided by an embodiment of the present invention, a detailed description is given below in conjunction with the accompanying drawings.

[0060] Based on the aforementioned related technologies, the inventors of the present invention have discovered through research that when the oxide semiconductor pattern in an oxide thin film transistor (hereinafter referred to as oxide TFT) is locally degraded, it will cause driving bright spots and sand mura defects on the display panel. The root causes of these defects are: local degradation of the oxide semiconductor pattern (as the active layer of the oxide thin film transistor) will cause the initial threshold voltage Vth in the characteristic curve of the oxide TFT to shift to the left, and the off-state current Ioff of the oxide TFT is too large, which will cause the pixel to be continuously driven to produce driving bright spots and sand mura defects when the oxide TFT is used to drive the pixel to emit light.

[0061] The inventor of the present invention has found through research that when the oxide semiconductor pattern in the oxide TFT is locally degraded, the degradation range is very small, only a few microns, and therefore only affects a single oxide TFT. Therefore, the present invention considers setting the oxide TFT to include multiple oxide semiconductor patterns connected in series, that is, setting an oxide TFT to include multiple sub-oxide TFTs connected in series, so that when the oxide semiconductor pattern in a sub-oxide TFT is degraded, the oxide TFT can still be guaranteed to have good working performance.

[0062] See also Figure 1 and Figure 2 As shown, an embodiment of the present invention provides an oxide thin film transistor, including:

[0063] A gate 2 is disposed on a substrate 1;

[0064] At least two active layer structures are arranged in sequence along a first direction, the at least two active layer structures include a first active layer structure 31 and a second active layer structure 32, the first active layer structure 31 includes: a first conductive connection portion 311 and a second conductive connection portion 313 arranged opposite to each other, and a first oxide semiconductor pattern 312 located between the first conductive connection portion 311 and the second conductive connection portion 313, the first oxide semiconductor pattern 312 is coupled to the first conductive connection portion 311 and the second conductive connection portion 313 respectively; the second active layer structure 32 includes: a third conductive connection portion 311 and a second conductive connection portion 313 arranged opposite to each other 321 and a fourth conductive connection part 323, and a second oxide semiconductor pattern 322 located between the third conductive connection part 321 and the fourth conductive connection part 323, the second oxide semiconductor pattern 322 being coupled to the third conductive connection part 321 and the fourth conductive connection part 323 respectively; the orthographic projection of the first oxide semiconductor pattern 312 on the substrate 1 and the orthographic projection of the second oxide semiconductor pattern 322 on the substrate 1 are both located inside the orthographic projection of the gate 2 on the substrate 1; the second conductive connection part 313 is coupled to the third conductive connection part 321.

[0065] Specifically, the material of the substrate 1 can be selected according to actual needs. For example, a glass substrate 1 or a flexible substrate 1 of other materials is selected. When an oxide thin film transistor is manufactured on the substrate 1, a buffer layer, a light shielding layer and other film layers can be first formed on the substrate 1, and then the oxide thin film transistor is continued to be manufactured on the side of the substrate 1 where the buffer layer and the light shielding layer are formed. When manufacturing an oxide thin film transistor, for example, the gate 2 and the at least two active layer structures arranged in a stacked manner can be sequentially formed in a direction away from the substrate 1.

[0066] The number of the active layer structures can be set according to actual needs. Exemplarily, the at least two active layer structures can be set to include a first active layer structure 31 and a second active layer structure 32; the first active layer structure 31 includes: a first conductive connection part 311 and a second conductive connection part 313 are arranged opposite to each other in a direction parallel to the substrate 1, and also includes a first oxide semiconductor pattern 312 located between the first conductive connection part 311 and the second conductive connection part 313, and the first oxide semiconductor pattern 312 is coupled to the first conductive connection part 311 and the second conductive connection part 313 respectively; the second active layer structure 32 includes: a third conductive connection part 321 and a fourth conductive connection part 323 are arranged opposite to each other in a direction parallel to the substrate 1, and also includes a second oxide semiconductor pattern 322 located between the third conductive connection part 321 and the fourth conductive connection part 323, and the second oxide semiconductor pattern 322 is coupled to the third conductive connection part 321 and the fourth conductive connection part 323 respectively.

[0067] When the at least two active layer structures include a first active layer structure 31 and a second active layer structure 32, the first conductive connection portion 311 in the first active layer structure 31 and the fourth conductive connection portion 323 in the second active layer structure 32 can be used one-to-one as two electrodes (such as a source and a drain) of the oxide thin film transistor.

[0068] It is worth noting that the first conductive connection part 311 and the second conductive connection part 313 can be formed by a single conductive material, or they can be formed by doping the opposite ends of the first oxide semiconductor pattern 312; similarly, the third conductive connection part 321 and the fourth conductive connection part 323 can be formed by a single conductive material, or they can be formed by doping the opposite ends of the second oxide semiconductor pattern 322.

[0069] In the oxide thin film transistor of the above structure, by setting the orthographic projection of the first oxide semiconductor pattern 312 on the substrate 1 and the orthographic projection of the second oxide semiconductor pattern 322 on the substrate 1, both are located inside the orthographic projection of the gate 2 on the substrate 1, so that the first active layer structure 31 and the gate 2 together form a first sub-Oxide TFT structure, and the second active layer structure 32 and the gate 2 together form a second sub-OxideTFT structure, so that the oxide thin film transistor provided in the embodiment of the present invention is formed into a structure including two sub-OxideTFTs connected in series.

[0070] When the oxide thin film transistor is working, a driving signal can be applied to the gate 2, the second conductive connection part 313 and the fourth conductive connection part 323 of the oxide thin film transistor. Under the control of the driving signal, the first sub-Oxide TFT and the second sub-Oxide TFT included in the oxide thin film transistor are both turned on, so that the oxide thin film transistor is in a conducting state as a whole and outputs the driving signal.

[0071] It should be noted that the oxide thin film transistor may include multiple (greater than two) active layer structures, and the multiple active layer structures may adopt a connection relationship similar to the first active layer structure 31 and the second active layer structure 32, so as to form the multiple active layer structures into a structure connected in series in sequence, and at the same time, the conductive connection part at the head end and the conductive connection part at the tail end of the series structure can be used as the two electrodes of the oxide thin film transistor in a one-to-one correspondence.

[0072] According to the specific structure and working process of the above-mentioned oxide thin film transistor, it can be known that the oxide thin film transistor provided in the embodiment of the present invention includes at least two active layer structures, so that the oxide thin film transistor can form at least two series-connected channel structures when working, so that when the oxide semiconductor pattern in an active layer structure in the oxide thin film transistor deteriorates, it will only affect the performance of the sub-Oxide TFT corresponding to the active layer structure, that is, the characteristic curve of the sub-Oxide TFT is shifted to the left, while other sub-Oxide TFTs still maintain a normal working state.

[0073] In more detail, when the oxide semiconductor pattern of a sub-Oxide TFT deteriorates, the on-state current Ion and the off-state current Ioff of the sub-Oxide TFT will increase. In this way, when each sub-Oxide TFT is controlled to be in an on state and the oxide thin film transistor is turned on as a whole, the on-state current Ion of the oxide thin film transistor as a whole increases due to the influence of the on-state current Ion of the sub-Oxide TFT, thereby effectively improving the charging capacity of the oxide thin film transistor; and when the oxide thin film transistor is turned off, each sub-Oxide TFT is in an off state, so even if the off-state current Ioff of the sub-Oxide TFT increases, it cannot flow out of the oxide thin film transistor through other sub-Oxide TFTs, so the increased off-state current Ioff will not affect the off-state current Ioff of the oxide thin film transistor as a whole, so that the off-state current Ioff of the oxide thin film transistor as a whole can still be maintained at a low level. Therefore, the oxide thin film transistor provided in the embodiment of the present invention not only has high stability, but also has strong driving capability. When the oxide thin film transistor provided in the embodiment of the present invention is used to drive the pixels in the display panel to emit light, the display panel is prevented from generating driving bright spots and sand mura defects.

[0074] In the oxide thin film transistor provided in the above embodiment, when the at least two active layer structures include the first active layer structure 31 and the second active layer structure 32, the specific arrangement structures of the first active layer structure 31 and the second active layer structure 32 are various, and several specific structures are given below.

[0075] like Figure 1 , Figure 3 and Figure 5 As shown, in some embodiments, the orthographic projection of the first conductive connection portion 311 on the substrate 1 forms a first overlapping region with the orthographic projection of the first oxide semiconductor pattern 312 on the substrate 1; the orthographic projection of the second conductive connection portion 313 on the substrate 1 forms a second overlapping region with the orthographic projection of the first oxide semiconductor pattern 312 on the substrate 1; the orthographic projection of the third conductive connection portion 321 on the substrate 1 forms a third overlapping region with the orthographic projection of the second oxide semiconductor pattern 322 on the substrate 1; the orthographic projection of the fourth conductive connection portion 323 on the substrate 1 forms a fourth overlapping region with the orthographic projection of the second oxide semiconductor pattern 322 on the substrate 1; the second overlapping region and the third overlapping region are located between the first overlapping region and the fourth overlapping region.

[0076] Specifically, the first conductive connection portion 311 and the first oxide semiconductor pattern 312 , as well as the second conductive connection portion 313 and the first oxide semiconductor pattern 312 , can be coupled in a variety of ways.

[0077] Exemplarily, the orthographic projection of the first conductive connection portion 311 on the substrate 1 may be set to form a first overlapping region with the orthographic projection of the first oxide semiconductor pattern 312 on the substrate 1, and the orthographic projection of the second conductive connection portion 313 on the substrate 1 may form a second overlapping region with the orthographic projection of the first oxide semiconductor pattern 312 on the substrate 1; when there is an insulating layer between the conductive connection portion and the oxide semiconductor pattern, a first via hole may be set in the insulating layer corresponding to the first overlapping region, and a second via hole may be set in the insulating layer corresponding to the second overlapping region, so that the first conductive connection portion 311 is connected to the substrate 1 through the first via hole. The first conductive connection part 311 is coupled to the first oxide semiconductor pattern 312, and the second conductive connection part 313 is coupled to the first oxide semiconductor pattern through the second via; and when there is no insulating layer between the conductive connection part and the oxide semiconductor pattern, the first conductive connection part 311 and the second conductive connection part 313 are directly formed on the surface of the first oxide semiconductor pattern 312 facing away from the substrate 1, so that the first conductive connection part 311 can be directly overlapped with the first oxide zone semiconductor pattern in the first overlapping area, and the second conductive connection part 313 can be directly overlapped with the first oxide semiconductor pattern 312 in the second overlapping area.

[0078] Similarly, when there is an insulating layer between the conductive connection part and the oxide semiconductor pattern, a third via hole can be set in the insulating layer corresponding to the third overlapping area, and a fourth via hole can be set in the insulating layer corresponding to the fourth overlapping area, so that the third conductive connection part 321 is coupled to the second oxide semiconductor pattern 322 through the third via hole, and the fourth conductive connection part 323 is coupled to the second oxide semiconductor pattern 322 through the fourth via hole; and when there is no insulating layer between the conductive connection part and the oxide semiconductor pattern, the third conductive connection part 321 and the fourth conductive connection part 323 are directly formed on the surface of the second oxide semiconductor pattern 322 facing away from the substrate 1, so that the third conductive connection part 321 can be directly overlapped with the second oxide zone semiconductor pattern in the third overlapping area, and the fourth conductive connection part 323 can be directly overlapped with the second oxide semiconductor pattern 322 in the fourth overlapping area.

[0079] In addition, in the above embodiment, the specific distribution positions of the first overlapping region, the second overlapping region, the third overlapping region and the fourth overlapping region can be set according to actual needs. For example, the second overlapping region and the third overlapping region can be set to be located between the first overlapping region and the fourth overlapping region, so that the second conductive connection part 313 and the third conductive connection part 321 are closer to each other, thereby facilitating the coupling between the third conductive connection part 321 and the fourth conductive connection part 323, and is also more conducive to reducing the occupied area of ​​the oxide thin film transistor.

[0080] In the oxide thin film transistor provided in the above embodiment, there are various specific coupling modes between the second conductive connection portion 313 and the third conductive connection portion 321 , and several specific coupling modes are listed below.

[0081] like Figure 1 and Figure 2 As shown, in some embodiments, the thin film transistor also includes a first overlap portion 4, the second conductive connection portion 313 and the third conductive connection portion 321 are coupled through the first overlap portion 4, and the orthographic projection of the first overlap portion 4 on the substrate 1 does not overlap with the orthographic projection of the first oxide semiconductor pattern 312 on the substrate 1, and does not overlap with the orthographic projection of the second oxide semiconductor pattern 322 on the substrate 1.

[0082] Specifically, when the second conductive connection portion 313 and the third conductive connection portion 321 are coupled through the first overlap portion 4, the specific shape and layout of the first overlap portion 4 are various, for example: the first direction is the X direction in the coordinate axis, when the first oxide semiconductor pattern 312 and the second oxide semiconductor pattern 322 are arranged along the X direction, the first overlap portion 4 can be set as a strip pattern extending along the X direction, and the first end of the strip pattern along the X direction is coupled to the second conductive connection portion 313, and the second end of the strip pattern along the X direction is coupled to the third conductive connection portion 321; in addition, according to actual needs, the orthographic projection of the first overlap portion 4 on the substrate 1 can be set to overlap or not overlap with the orthographic projection of the first oxide semiconductor pattern 312 on the substrate 1; and the orthographic projection of the first overlap portion 4 on the substrate 1 can be set to overlap or not overlap with the orthographic projection of the second oxide semiconductor pattern 322 on the substrate 1.

[0083] In more detail, Figure 1As shown, the second conductive connection part 313 and the third conductive connection part 321 are both strip-shaped figures extending along the Y direction of the coordinate axis, and the orthographic projections of the second conductive connection part 313, the third conductive connection part 321 and the first overlapping part 4 on the substrate 1 can together form an I-shape.

[0084] like Figure 3 and Figure 4 As shown, in some embodiments, the first oxide semiconductor pattern 312 and the second oxide semiconductor pattern 322 may be arranged in sequence along a first direction and staggered along a second direction perpendicular to the first direction.

[0085] Exemplarily, the first direction is the X direction, and the second direction is the Y direction. When laying out the first oxide semiconductor pattern 312 and the second oxide semiconductor pattern 322, the first oxide semiconductor pattern 312 and the second oxide semiconductor pattern 322 can be arranged in sequence along the X direction and staggered along the Y direction perpendicular to the X direction.

[0086] In some embodiments, an orthographic projection of the first oxide semiconductor pattern 312 in the second direction may be set to form a fifth overlapping region with an orthographic projection of the second oxide semiconductor pattern 322 in the second direction, and the second conductive connection portion 313, the first overlapping portion 4 and the third conductive connection portion 321 form an integrated I-shaped structure extending along the second direction, and a size of the fifth overlapping region in the first direction is the same as a width of the I-shaped structure along the first direction.

[0087] Specifically, when the first oxide semiconductor pattern 312 and the second oxide semiconductor pattern 322 are arranged in sequence along a first direction and staggered along a second direction perpendicular to the first direction, an orthographic projection of the first oxide semiconductor pattern 312 in the second direction can be further set to form a fifth overlapping area with the orthographic projection of the second oxide semiconductor pattern 322 in the second direction, so that the second conductive connection portion 313, the first overlapping portion 4 and the third conductive connection portion 321 can be formed into an integrated one-line structure extending along the second direction, thereby simplifying the manufacturing process to the greatest extent and reducing the layout area of ​​the oxide thin film transistor.

[0088] Furthermore, the size of the fifth overlapping region in the first direction can be set to be the same as the width of the I-shaped structure along the first direction. This setting method minimizes the occupied area of ​​the integrated I-shaped structure while ensuring a larger contact area between the second conductive connection portion 313 and the first oxide semiconductor pattern 312, and a larger contact area between the third conductive connection portion 321 and the second oxide semiconductor pattern 322, thereby effectively reducing the occupied space of the oxide thin film transistor while ensuring the working performance of the oxide thin film transistor.

[0089] like Figure 5-Figure 7 As shown, in some embodiments, the first oxide semiconductor pattern 312 and the second oxide semiconductor pattern 322 may be arranged to form an integrated structure, and the second conductive connection portion 313 may be reused as the third conductive connection portion 321 .

[0090] Specifically, the first oxide semiconductor pattern 312 and the second oxide semiconductor pattern 322 are formed into an integrated structure, and the second conductive connection portion 313 is reused as the third conductive connection portion 321. This not only makes the area of ​​the oxide semiconductor pattern corresponding to the oxide thin film transistor larger, but is also more conducive to improving the working stability of the oxide thin film transistor. Moreover, when manufacturing the oxide semiconductor pattern 121, it can effectively simplify the composition process flow and effectively reduce the occupied space of the oxide thin film transistor.

[0091] Need to explain, Figure 6 A gate insulating layer 6 is formed between the gate 2 and the oxide semiconductor pattern.

[0092] In the oxide thin film transistor provided in the above embodiment, the specific structures and layouts of the first conductive connection part 311 and the second conductive connection part 313 are various. A specific embodiment corresponding to the first conductive connection part 311 and the second conductive connection part 313 is given below.

[0093] like Figure 1 , Figure 3 and Figure 5 As shown, in some embodiments, the first conductive connection portion 311 includes a first portion 3110 extending along the second direction, and a second portion 3111 extending from the first portion 3110 along the second direction, the orthographic projection of the first portion 3110 on the substrate 1 and the orthographic projection of the first oxide semiconductor pattern 312 on the substrate 1 form the first overlapping area, and the orthographic projection of the second portion 3111 on the substrate 1 does not overlap with the orthographic projection of the first oxide semiconductor pattern 312 on the substrate 1.

[0094] Specifically, the first conductive connection portion 311 can be set to include a first part 3110 and a second part 3111, the first part 3110 extends along the second direction, the orthographic projection of the first part 3110 on the substrate 1 and the orthographic projection of the first oxide semiconductor pattern 312 on the substrate 1 form the first overlapping area, the second part 3111 is a structure extending from the first part 3110 along the second direction, the orthographic projection of the second part 3111 on the substrate 1 does not overlap with the first oxide semiconductor structure, and the first part 3110 and the second part 3111 form an integrated strip structure extending along the second direction.

[0095] Furthermore, it can be arranged that along the first direction, the width of the first overlapping region is the same as the width of the integrated strip structure, but is not limited thereto.

[0096] When the first conductive connection portion 311 is formed into the above structure, the first conductive connection portion 311 can be used as an input electrode (such as a drain) of the oxide thin film transistor, which makes it easier to couple the oxide thin film transistor to an external terminal.

[0097] In some embodiments, the fourth conductive connection portion 323 includes a third part 3230 and a fourth part 3231, the third part 3230 extends along a second direction perpendicular to the first direction, and the orthographic projection of the third part 3230 on the substrate 1 partially overlaps with the orthographic projection of the second oxide semiconductor pattern 322 on the substrate 1 to form the fourth overlapping area; the fourth part 3231 extends along the first direction, the orthographic projection of the fourth part 3231 on the substrate 1 does not overlap with the orthographic projection of the second oxide semiconductor pattern 322 on the substrate 1, and the fourth part 3231 is coupled to the first end of the third part 3230, and the orthographic projection of the first end on the substrate 1 does not overlap with the orthographic projection of the second oxide semiconductor pattern 322 on the substrate 1.

[0098] Specifically, the fourth conductive connection portion 323 may be set to include a third portion 3230 and a fourth portion 3231, the third portion 3230 extending along the second direction, the third portion 3230 may include a first sub-portion and a second sub-portion, the orthographic projection of the first sub-portion on the substrate 1 and the orthographic projection of the second oxide semiconductor pattern 322 on the substrate 1 form the fourth overlapping area, the orthographic projection of the second sub-portion on the substrate 1 and the orthographic projection of the second oxide semiconductor pattern 322 on the substrate 1 do not overlap, and the second sub-portion may be a structure extending from the first sub-portion along the second direction.

[0099] The fourth part 3231 extends along the first direction, and the orthographic projection of the fourth part 3231 on the substrate 1 does not overlap with the orthographic projection of the second oxide semiconductor pattern 322 on the substrate 1. There are multiple coupling modes between the fourth part 3231 and the third part 3230. Exemplarily, the fourth part 3231 is coupled to the first end of the third part 3230, and the orthographic projection of the first end on the substrate 1 does not overlap with the orthographic projection of the second oxide semiconductor pattern 322 on the substrate 1. Under this coupling mode, the fourth part 3231 can be formed into an L-shaped figure or a T-shaped figure.

[0100] Further, it can be set that along the first direction, the width of the fourth overlapping area is the same as the width of the third portion 3230, but it is not limited thereto.

[0101] When the fourth conductive connection part 323 is set to adopt the above structure, the third part 3230 and the fourth part 3231 can be formed into an integrated structure, and the fourth conductive connection part 323 can be used as the output electrode (such as the source) of the oxide thin film transistor. In this way, when the thin film transistor is used as a driving transistor in a pixel driving circuit, it is more conducive to the coupling between the output electrode of the driving transistor and the corresponding light-emitting element.

[0102] like Figure 8 and Fig. 9 As shown, in some embodiments, the orthographic projection of the first conductive connection portion 311 on the substrate 1 may be set to form a first overlapping area with the orthographic projection of the first oxide semiconductor pattern 312 on the substrate 1; the orthographic projection of the second conductive connection portion 313 on the substrate 1 forms a second overlapping area with the orthographic projection of the first oxide semiconductor pattern 312 on the substrate 1; the orthographic projection of the third conductive connection portion 321 on the substrate 1 forms a third overlapping area with the orthographic projection of the second oxide semiconductor pattern 322 on the substrate 1; the orthographic projection of the fourth conductive connection portion 323 on the substrate 1 forms a fourth overlapping area with the orthographic projection of the second oxide semiconductor pattern 322 on the substrate 1; in a second direction perpendicular to the first direction, the second overlapping area and the third overlapping area are located on a first side of the first oxide semiconductor pattern 312, the first overlapping area and the fourth overlapping area are located on a second side of the second oxide semiconductor pattern 322, and the first side and the second side are opposite along the second direction.

[0103] Specifically, when there is an insulating layer between the conductive connection part and the oxide semiconductor pattern, a first via hole can be set in the insulating layer corresponding to the first overlapping area, and a second via hole can be set in the insulating layer corresponding to the second overlapping area, so that the first conductive connection part 311 is coupled to the first oxide semiconductor pattern 312 through the first via hole, and the second conductive connection part 313 is coupled to the first oxide semiconductor pattern 312 through the second via hole; and when there is no insulating layer between the conductive connection part and the oxide semiconductor pattern, the first conductive connection part 311 and the second conductive connection part 313 are directly formed on the surface of the first oxide semiconductor pattern 312 facing away from the substrate 1, so that the first conductive connection part 311 can be directly overlapped with the first oxide zone semiconductor pattern in the first overlapping area, and the second conductive connection part 313 can be directly overlapped with the first oxide semiconductor pattern 312 in the second overlapping area.

[0104] Similarly, when there is an insulating layer between the conductive connection part and the oxide semiconductor pattern, a third via hole can be set in the insulating layer corresponding to the third overlapping area, and a fourth via hole can be set in the insulating layer corresponding to the fourth overlapping area, so that the third conductive connection part 321 is coupled to the second oxide semiconductor pattern 322 through the third via hole, and the fourth conductive connection part 323 is coupled to the second oxide semiconductor pattern 322 through the fourth via hole; and when there is no insulating layer between the conductive connection part and the oxide semiconductor pattern, the third conductive connection part 321 and the fourth conductive connection part 323 are directly formed on the surface of the second oxide semiconductor pattern 322 facing away from the substrate 1, so that the third conductive connection part 321 can be directly overlapped with the second oxide zone semiconductor pattern in the third overlapping area, and the fourth conductive connection part 323 can be directly overlapped with the second oxide semiconductor pattern 322 in the fourth overlapping area.

[0105] In addition, in the above embodiment, the specific distribution positions of the first overlapping area, the second overlapping area, the third overlapping area and the fourth overlapping area can be set according to actual needs. For example, they can be set in the second direction, the second overlapping area and the third overlapping area are located on the first side of the first oxide semiconductor pattern 312, the first overlapping area and the fourth overlapping area are located on the second side of the second oxide semiconductor pattern 322, and the first side and the second side are opposite to each other along the second direction; this structure makes the channel region generated by the first oxide semiconductor pattern 312 and the channel region generated by the second oxide semiconductor pattern 322 independent of each other during operation, thereby avoiding interference between adjacent channel regions during operation; moreover, this structure also makes the distance between the coupled second conductive connection part 313 and the third conductive connection part 321 shorter, which not only facilitates the coupling between the second conductive connection part 313 and the third conductive connection part 321, but also is more conducive to reducing the occupied area of ​​the oxide thin film transistor.

[0106] like Figure 8 and Fig. 9 As shown, the thin film transistor also includes a second overlapping portion 5, the second conductive connection portion 313 and the third conductive connection portion 321 are coupled through the second overlapping portion 5, the orthographic projection of the second overlapping portion 5 on the substrate 1 does not overlap with the orthographic projection of the first oxide semiconductor pattern 312 on the substrate 1, and does not overlap with the orthographic projection of the second oxide semiconductor pattern 322 on the substrate 1; the second conductive connection portion 313, the second overlapping portion 5 and the third conductive connection portion 321 form a straight-line structure along the first direction.

[0107] Specifically, when the second conductive connection portion 313 and the third conductive connection portion 321 are coupled through the second overlap portion, the specific shape and layout of the second overlap portion 5 are various, exemplarily: the first direction is the X direction in the coordinate axis, and when the first oxide semiconductor pattern 312 and the second oxide semiconductor pattern 322 are arranged along the X direction, the second overlap portion 5 can be set as a strip pattern extending along the X direction, and the second conductive connection portion 313 and the third conductive connection portion 321 are both set as strip patterns extending along the X direction, so that the first end of the second overlap portion 5 along the X direction can be coupled to the second conductive connection portion 313, and the second end of the second overlap portion 5 along the X direction can be coupled to the third conductive connection portion 321, so that the second conductive connection portion 313, the second overlap portion 5 and the third conductive connection portion 321 can form a straight-line structure along the X direction.

[0108] In addition, according to actual needs, the orthographic projection of the second overlapping portion 5 on the substrate 1 can be arranged to overlap or not overlap with the orthographic projection of the first oxide semiconductor pattern 312 on the substrate 1; and the orthographic projection of the second overlapping portion 5 on the substrate 1 can be arranged to overlap or not overlap with the orthographic projection of the second oxide semiconductor pattern 322 on the substrate 1.

[0109] In addition, the I-shaped structure formed by the second conductive connection portion 313, the second overlapping portion 5 and the third conductive connection portion 321 can be formed into an integrated structure, so that the I-shaped structure can be formed through a single patterning process, thereby effectively simplifying the manufacturing process of the oxide thin film transistor and saving the manufacturing cost of the oxide thin film transistor.

[0110] like Figure 8 As shown, further, the first conductive connection portion 311 can also be set to include a fifth part 3112 and a sixth part 3113 coupled to each other, the fifth part 3112 extends along the first direction, and the orthographic projection of the fifth part 3112 on the substrate 1 and the orthographic projection of the first oxide semiconductor pattern 312 on the substrate 1 form the first overlapping area; the sixth part 3113 extends along the second direction, and the orthographic projection of the sixth part 3113 on the substrate 1 does not overlap with the orthographic projection of the first oxide semiconductor pattern 312 on the substrate 1.

[0111] Specifically, the first conductive connection portion 311 may include a fifth portion 3112 and a sixth portion 3113 coupled to each other, wherein the fifth portion 3112 may extend along the first direction, and the orthographic projection of the fifth portion 3112 on the substrate 1 partially overlaps with the orthographic projection of the first oxide semiconductor pattern 312 on the substrate 1 to form the first overlapping area; the sixth portion 3113 may extend along the second direction, the orthographic projection of the sixth portion 3113 on the substrate 1 does not overlap with the orthographic projection of the first oxide semiconductor pattern 312 on the substrate 1, and the sixth portion 3113 may be coupled to a first end of the fifth portion 3112, the orthographic projection of the first end on the substrate 1 is not coupled to the first oxide semiconductor pattern 312, and the first conductive connection portion 311 formed after the fifth portion 3112 and the sixth portion 3113 are coupled may be L-shaped or T-shaped.

[0112] In addition, it can be set that along the second direction, the width of the first overlapping area is the same as the width of the fifth portion 3112, but it is not limited thereto.

[0113] When the first conductive connection portion 311 is formed into the above structure, the first conductive connection portion 311 can be used as an input electrode (such as a drain) of the oxide thin film transistor, which makes it easier to couple the oxide thin film transistor to an external terminal.

[0114] Further, the fourth conductive connection portion 323 includes a seventh portion 3232, an eighth portion 3233 and a ninth portion 3234; wherein the seventh portion 3232 extends along the first direction, and the orthographic projection of the seventh portion 3232 on the substrate 1 and the orthographic projection of the second oxide semiconductor pattern 322 on the substrate 1 form the fourth overlapping area; the ninth portion 3234 extends along the first direction, and the orthographic projection of the ninth portion 3234 on the substrate 1 does not overlap with the orthographic projection of the second oxide semiconductor pattern 322 on the substrate 1; the eighth portion 3233 extends along the second direction, and the orthographic projection of the eighth portion 3233 on the substrate 1 is located between the orthographic projection of the seventh portion 3232 on the substrate 1 and the orthographic projection of the ninth portion 3234 on the substrate 1, and does not overlap with the orthographic projection of the second oxide semiconductor pattern 322 on the substrate 1, and the seventh portion 3232 is coupled to the ninth portion 3234 through the eighth portion 3233.

[0115] Specifically, the fourth conductive connection portion 323 can be set to include a seventh portion 3232, an eighth portion 3233 and a ninth portion 3234, the seventh portion 3232 extends along the first direction, and the orthographic projection of the seventh portion 3232 on the substrate 1 and the orthographic projection of the second oxide semiconductor pattern 322 on the substrate 1 form the fourth overlapping area, and further, the orthographic projection of the seventh portion 3232 on the substrate 1 can be set to be located inside the orthographic projection of the second oxide semiconductor pattern 322 on the substrate 1.

[0116] Along the second direction, the ninth portion 3234 may be arranged opposite to the seventh portion 3232 , the ninth portion 3234 extends along the first direction, and the orthographic projection of the ninth portion 3234 on the substrate 1 does not overlap with the orthographic projection of the second oxide semiconductor pattern 322 on the substrate 1 .

[0117] The eighth portion 3233 extends along the second direction, and the orthographic projection of the eighth portion 3233 on the substrate 1 is located between the orthographic projection of the seventh portion 3232 on the substrate 1 and the orthographic projection of the ninth portion 3234 on the substrate 1. An end of the eighth portion 3233 close to the seventh portion 3232 is coupled to the seventh portion 3232, and an end of the eighth portion 3233 close to the ninth portion 3234 is coupled to the ninth portion 3234, so that the fourth conductive connection portion 323 formed by the seventh portion 3232, the eighth portion 3233 and the ninth portion 3234 is in an I-shape.

[0118] It is also worth noting that, according to actual needs, the full projection of the eighth portion 3233 on the substrate 1 may overlap or not overlap with the orthographic projection of the second oxide semiconductor pattern 322 on the substrate 1 .

[0119] Furthermore, it can be arranged that along the second direction, the width of the ninth portion 3234 is greater than the width of the seventh portion 3232 , so as to ensure better connection performance between the fourth conductive connection portion 323 and the outside.

[0120] When the fourth conductive connection part 323 is set to adopt the above structure, the seventh part 3232, the eighth part 3233 and the ninth part 3234 can be formed into an integrated structure, and the fourth conductive connection part 323 can be used as the output electrode (such as the source) of the oxide thin film transistor. In this way, when the thin film transistor is used as a driving transistor in a pixel driving circuit, it is more conducive to the coupling between the output electrode of the driving transistor and the corresponding light-emitting element.

[0121] In the oxide thin film transistor provided in the above embodiments, the oxide semiconductor patterns in each of the active layer structures are arranged in various ways. In some embodiments, the oxide semiconductor patterns in each of the active layer structures are arranged in the same layer and the same material. Specifically, the first oxide semiconductor pattern 312 and the second oxide semiconductor pattern 322 can be arranged in the same layer and the same material.

[0122] When the oxide semiconductor patterns in each of the active layer structures are arranged in the same layer and with the same material, the steps for making the oxide semiconductor patterns in each of the active layer structures specifically include: firstly making an oxide semiconductor film using an oxide semiconductor material and forming a photoresist covering the oxide semiconductor film, then exposing the photoresist using a mask plate including a light-transmitting area and a light-shielding area to form a photoresist retaining area and a photoresist removing area, wherein the photoresist retaining area corresponds to the area where the oxide semiconductor pattern in each of the active structures is located, and the photoresist removing area corresponds to other areas except the area where the oxide semiconductor pattern in each of the active structures is located, removing the photoresist located in the photoresist removing area using a developer to expose the oxide semiconductor film located in the photoresist removing area, and then removing the exposed oxide semiconductor film using an etching process, and finally stripping off the remaining photoresist to form the oxide semiconductor patterns in each of the active layer structures.

[0123] The above-mentioned setting of the oxide semiconductor patterns in each active layer structure in the same layer and the same material enables the oxide semiconductor patterns in each active layer structure to be formed simultaneously through a single patterning process, thereby effectively simplifying the manufacturing process of the oxide thin film transistor provided in the above embodiment and reducing the production cost.

[0124] It should be noted that the above-mentioned "same layer" refers to a layer structure formed by using the same film-forming process to form a film layer for forming a specific pattern, and then using the same mask plate through a single patterning process. Depending on the specific pattern, a single patterning process may include multiple exposure, development or etching processes, and the specific pattern in the formed layer structure may be continuous or discontinuous, and these specific patterns may also be at different heights or have different thicknesses.

[0125] When the oxide semiconductor patterns in each of the active layer structures are set in the same layer and the same material, the steps of making the oxide semiconductor patterns in each of the active layer structures may include: using the same film forming process to make an oxide semiconductor film layer for forming each oxide semiconductor pattern; then patterning the oxide semiconductor film layer through a single composition process to simultaneously form the oxide semiconductor patterns in each of the active layer structures.

[0126] In the oxide thin film transistor provided in the above embodiments, the specific arrangement of the first conductive connection part 311, the second conductive connection part 313, the third conductive connection part 321 and the fourth conductive connection part 323 is various. Exemplarily, the first conductive connection part 311, the second conductive connection part 313, the third conductive connection part 321 and the fourth conductive connection part 323 are arranged in the same layer and with the same material.

[0127] Specifically, the first conductive connection part 311, the second conductive connection part 313, the third conductive connection part 321 and the fourth conductive connection part 323 are arranged in the same layer and the same material, so that the first conductive connection part 311, the second conductive connection part 313, the third conductive connection part 321 and the fourth conductive connection part 323 can be formed simultaneously in the same composition process, thereby effectively simplifying the manufacturing process of the oxide thin film transistor.

[0128] An embodiment of the present invention further provides a display device, comprising the oxide thin film transistor provided by the above embodiment.

[0129] Since the oxide thin film transistor provided in the above embodiment has not only high stability but also strong driving capability, when the oxide thin film transistor provided in the embodiment of the present invention is used to drive the pixels in the display panel to emit light, the display panel is prevented from generating driving bright spots and sand mura defects; therefore, the display device provided in the embodiment of the present invention can also avoid generating driving bright spots and sand mura defects when including the above oxide thin film transistor.

[0130] In addition, since the oxide thin film transistor provided in the above-mentioned embodiment has the advantages of simple manufacturing process, low manufacturing cost, and small overall occupied area, the display device provided in the embodiment of the present invention, when including the above-mentioned oxide thin film transistor, also has the beneficial effects of simple manufacturing process, low manufacturing cost, and is conducive to achieving high resolution.

[0131] It should be noted that the display device may be any product or component with a display function, such as a television, a monitor, a digital photo frame, a mobile phone, and a tablet computer.

[0132] An embodiment of the present invention further provides a driving method of an oxide thin film transistor, which is used to drive the oxide thin film transistor provided by the above embodiment, and the driving method includes:

[0133] A driving signal is applied to the gate 2 of the oxide thin film transistor, the second conductive connection portion 313 included in the first active layer structure 31 and the fourth conductive connection portion 323 included in the second active layer structure 32 to turn on the oxide thin film transistor.

[0134] Specifically, when the oxide thin film transistor is working, a driving signal can be applied to the gate 2 of the oxide thin film transistor, the second conductive connection part 313 included in the first active layer structure 31, and the fourth conductive connection part 323 included in the second active layer structure 32. Under the control of the driving signal, each sub-Oxide TFT included in the oxide thin film transistor is turned on, so that the oxide thin film transistor as a whole is in a conductive state and outputs a driving signal.

[0135] When the oxide thin film transistor is driven by the driving method provided by the embodiment of the present invention, since the oxide thin film transistor includes the at least two active layer structures, the oxide thin film transistor can form at least two series-connected channel structures when it is working. In this way, when the oxide semiconductor pattern in an active layer structure in the oxide thin film transistor deteriorates, it will only affect the performance of the sub-Oxide TFT corresponding to the active layer structure, that is, the characteristic curve of the sub-Oxide TFT shifts to the left, while other sub-Oxide TFTs still maintain a normal working state.

[0136] In more detail, when the oxide semiconductor pattern of a sub-Oxide TFT deteriorates, the on-state current Ion and the off-state current Ioff of the sub-Oxide TFT will increase. In this way, when each sub-Oxide TFT is controlled to be in an on state and the oxide thin film transistor is turned on as a whole, the on-state current Ion of the oxide thin film transistor as a whole increases due to the influence of the on-state current Ion of the sub-Oxide TFT, thereby effectively improving the charging capacity of the oxide thin film transistor; and when the oxide thin film transistor is turned off, each sub-Oxide TFT is in an off state, so even if the off-state current Ioff of the sub-Oxide TFT increases, it cannot flow out of the oxide thin film transistor through other sub-Oxide TFTs, so the increased off-state current Ioff will not affect the off-state current Ioff of the oxide thin film transistor as a whole, so that the off-state current Ioff of the oxide thin film transistor as a whole can still be maintained at a low level. Therefore, when the driving method provided in the embodiment of the present invention is used to drive the oxide thin film transistor, the oxide thin film transistor not only has higher stability but also has stronger driving capability. When the oxide thin film transistor is used to drive the pixels in the display panel to emit light, the display panel is prevented from generating driving bright spots and sand mura defects.

[0137] It should be noted that each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the method embodiment, since it is basically similar to the product embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the product embodiment.

[0138] Unless otherwise defined, the technical terms or scientific terms used in this disclosure should be understood by people with ordinary skills in the field to which the present invention belongs. "First", "second" and similar words used in this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. "Include" or "comprise" and similar words mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect", "couple" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0139] It will be understood that when an element such as a layer, film, region, or substrate is referred to as being “on” or “under” another element, it can be “directly on” or “under” the other element or intervening elements may be present.

[0140] In the description of the above embodiments, specific features, structures, materials or characteristics may be combined in a suitable manner in any one or more embodiments or examples.

[0141] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed by the present invention, which should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. An oxide thin film transistor, characterized in that: include: A gate disposed on the substrate; At least two active layer structures are arranged in sequence along a first direction, the at least two active layer structures include a first active layer structure and a second active layer structure, the first active layer structure includes: a first conductive connection portion and a second conductive connection portion arranged opposite to each other, and a first oxide semiconductor pattern located between the first conductive connection portion and the second conductive connection portion and coupled to the first conductive connection portion and the second conductive connection portion respectively; the second active layer structure includes: a third conductive connection portion and a fourth conductive connection portion arranged opposite to each other, and a second oxide semiconductor pattern located between the third conductive connection portion and the fourth conductive connection portion and coupled to the third conductive connection portion and the fourth conductive connection portion respectively; the orthographic projection of the first oxide semiconductor pattern on the substrate and the orthographic projection of the second oxide semiconductor pattern on the substrate are both located inside the orthographic projection of the gate on the substrate; the second conductive connection portion is coupled to the third conductive connection portion; The orthographic projection of the first conductive connection portion on the substrate and the orthographic projection of the first oxide semiconductor pattern on the substrate form a first overlapping region; The orthographic projection of the second conductive connection portion on the substrate and the orthographic projection of the first oxide semiconductor pattern on the substrate form a second overlapping region; The orthographic projection of the third conductive connection portion on the substrate and the orthographic projection of the second oxide semiconductor pattern on the substrate form a third overlapping region; The orthographic projection of the fourth conductive connection portion on the substrate and the orthographic projection of the second oxide semiconductor pattern on the substrate form a fourth overlapping region; In a second direction perpendicular to the first direction, the second overlapping region and the third overlapping region are located on a first side of the first oxide semiconductor pattern, the first overlapping region and the fourth overlapping region are located on a second side of the second oxide semiconductor pattern, and the first side and the second side are opposite; The at least two active layer structures are sequentially connected in series, and the conductive connecting portion at the head end and the conductive connecting portion at the tail end correspond one by one to serve as two electrodes of the oxide thin film transistor.

2. The oxide thin film transistor according to claim 1, characterized in that: The thin film transistor further includes a second overlapping portion, the second conductive connection portion and the third conductive connection portion are coupled via the second overlapping portion, and an orthographic projection of the second overlapping portion on the substrate does not overlap with an orthographic projection of the first oxide semiconductor pattern on the substrate, and does not overlap with an orthographic projection of the second oxide semiconductor pattern on the substrate; The second conductive connection portion, the second overlapping portion, and the third conductive connection portion are formed into a straight-line structure along the first direction.

3. The oxide thin film transistor according to claim 2, characterized in that: The first conductive connection portion includes a fifth portion and a sixth portion coupled to each other, the fifth portion extends along the first direction, and an orthographic projection of the fifth portion on the substrate and an orthographic projection of the first oxide semiconductor pattern on the substrate form the first overlapping region; The sixth portion extends along the second direction, and an orthographic projection of the sixth portion on the substrate does not overlap with an orthographic projection of the first oxide semiconductor pattern on the substrate.

4. The oxide thin film transistor according to claim 2, characterized in that: The fourth conductive connection portion includes a seventh portion, an eighth portion and a ninth portion; wherein, The seventh portion extends along the first direction, and an orthographic projection of the seventh portion on the substrate and an orthographic projection of the second oxide semiconductor pattern on the substrate form the fourth overlapping region; The ninth portion extends along the first direction, and an orthographic projection of the ninth portion on the substrate does not overlap with an orthographic projection of the second oxide semiconductor pattern on the substrate; The eighth portion extends along the second direction, the orthographic projection of the eighth portion on the substrate is located between the orthographic projection of the seventh portion on the substrate and the orthographic projection of the ninth portion on the substrate, and does not overlap with the orthographic projection of the second oxide semiconductor pattern on the substrate, and the seventh portion is coupled to the ninth portion through the eighth portion.

5. The oxide thin film transistor according to claim 1, characterized in that: The first oxide semiconductor pattern and the second oxide semiconductor pattern are provided in the same layer and with the same material.

6. A display device, characterized in that: The invention comprises the oxide thin film transistor according to any one of claims 1 to 5.

7. A driving method of an oxide thin film transistor, characterized in that: For driving an oxide thin film transistor according to any one of claims 1 to 5, the driving method comprises: A driving signal is applied to the gate of the oxide thin film transistor, the second conductive connection portion included in the first active layer structure, and the fourth conductive connection portion included in the second active layer structure to turn on the oxide thin film transistor.

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