Transistor devices

By designing the first and second active device regions with different areas of specific on-resistance in the transistor device, the problem of deterioration in temperature management caused by reducing the size of the transistor device is solved, and higher thermal stability is achieved.

CN110620138BActive Publication Date: 2025-03-28INFINEON TECHNOLOGIES AG
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Patent Information

Application Number
CN201910526459.8
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2018-06-18
Filing Date
2019-06-18
Publication Date
2025-03-28
Estimated Expiration
2039-06-18

AI Technical Summary

Technical Problem

Reducing the size of the power transistor device will lead to deterioration in temperature management, increasing the current density limit, and making the transistor device thermally unstable at high current density.

Method used

A transistor device is designed, which includes a semiconductor body, a source conductor, a source clip, a first active device region and a second active device region. The first active device region has a smaller area specific on-resistance, while the second active device region has a larger area specific on-resistance, ensuring thermal stability of the entire device at a given operating point.

Benefits of technology

By increasing the area specific on-resistance of the second active device region, the current density is reduced, the thermal stability of the transistor device is improved, and the thermal instability problem caused by the increase in current density is avoided.

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Abstract

A transistor device is disclosed. The transistor device comprises: a semiconductor body (100); a source conductor (21) on top of the semiconductor body (100); a source clip (31) on top of the source conductor (21) and electrically connected to the source conductor (21); a first active device region (110) arranged in the semiconductor body (100), covered by the source conductor (21) and the source clip (31), and comprising at least one device unit (10); and a second active device region (120) arranged in the semiconductor body (100), covered by a region of the source conductor (21) not covered by the source clip (31), and comprising at least one device unit (10, 10'). The first active device region (110) has a first area-specific on-resistance, and the second active device region (120) has a second area-specific on-resistance, wherein the second area-specific on-resistance is greater than the first area-specific on-resistance.
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